Chip system and method for autonomously repairing irradiation damage

Abstract

The invention discloses a chip system and method for automatically repairing irradiation damage. The chip system comprises a functional chip, a temperature sensor, a dielectric heat conduction layer, a radio frequency heater and a heat insulation substrate, the dielectric heat conduction layer serves as a bridging layer and is used for transmitting heat generated by the radio frequency heater to the functional chip, and meanwhile, the dielectric heat conduction layer also provides electric insulation for the functional chip; the functional chip is used as a target area for annealing execution, and an on-chip monitoring circuit is placed in the functional chip; the radio frequency heater utilizes a high-frequency alternating electromagnetic field to generate eddy current or periodic orientation of polar molecules and hysteresis loss, so that heat is generated to provide a heat source for annealing repair; the temperature sensor is used for monitoring the temperature of a target area for annealing execution in real time; the on-chip monitoring circuit realizes accurate dynamic control. The method has the characteristic that in-situ, real-time and localized precise annealing repair can be realized.

Description

Technical Field

[0001] This invention belongs to the field of microelectronics technology, specifically relating to a chip system and method for autonomously repairing radiation damage. Background Technology

[0002] High-energy charged particles (such as electrons and protons) and galactic cosmic rays can cause ionization and displacement damage to semiconductor materials and devices. This damage introduces deep or shallow energy levels into the band gap of semiconductor materials. These levels can act as recombination centers or traps for charge carriers, reducing minority carrier lifetime and mobility, thereby severely degrading the electrical performance of devices, such as increasing leakage current, reducing gain, and slowing down switching speed, ultimately leading to circuit performance degradation or even functional failure.

[0003] To address the threat of space radiation, traditional radiation-hardened designs employ triple-mode redundancy or multi-mode redundancy, along with voting mechanisms to shield faulty components in the system design. On the other hand, they focus on using special processes and materials, such as silicon-on-insulator (SOI) and gate oxide hardening, to fundamentally improve the radiation resistance of devices. The core idea behind these radiation-hardened designs is "passive defense" and "redundancy tolerance." While effective, this comes at the cost of a dramatic increase in cost, size, weight, and power consumption. For example, SOI is extremely expensive, several times more so than silicon processes. Radiation-hardened designs at the circuit level typically increase delay, circuit area, and power consumption, drastically increasing circuit and wiring complexity. Radiation-hardened designs at the system level significantly increase system weight, volume, power consumption, and cost, causing launch costs to skyrocket. Furthermore, these radiation-hardened designs are static; once the chip's on-orbit performance degrades, regenerative repair is impossible, and damage accumulates until the chip fails.

[0004] Annealing technology has been proven to be an effective way to repair irradiation damage, but traditional laboratory annealing damage repair experiments require specialized equipment and technicians, and the heating method is global heating, which will heat the entire chip or wafer to a high temperature, making it difficult to achieve precise local heating, and may even cause devastating damage to other areas or modules, leading to the failure of the entire chip. Summary of the Invention

[0005] In order to overcome the shortcomings of the existing technology, the present invention aims to provide a chip system and method for autonomously repairing irradiation damage, which has the characteristics of enabling in-situ, real-time and localized precise annealing repair.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows: A chip system for autonomously repairing radiation damage includes a temperature sensor, a dielectric thermally conductive layer, an RF heater, and a thermally insulating substrate; the functional chip serves as the target area for annealing, and an on-chip monitoring circuit is placed inside the functional chip. The dielectric thermally conductive layer serves as a bridging layer to transfer the heat generated by the RF heater to the functional chip, while also providing electrical insulation for the functional chip. The functional chip serves as the target area for annealing, and an on-chip monitoring circuit is placed inside the functional chip. The radio frequency heater is based on the principle of radio frequency heating. It uses a high-frequency alternating electromagnetic field to generate eddy currents or polar molecules to periodically orient and cause hysteresis loss, thereby generating heat to provide a heat source for annealing repair. The temperature sensors are distributed near the functional units of the functional chip that are susceptible to radiation damage or are actively operating, and are used to monitor the temperature of the target area where annealing is performed in real time. The thermal insulation substrate is used to reduce downward heat loss of the system and reduce the impact on other chips. The on-chip monitoring circuit uses a PID controller to compare the temperature signal sensed by the temperature sensor with the preset target area annealing temperature value, and adjusts the electrical power applied to the radio frequency heater according to the instantaneous error. Through continuous reading, comparison and adjustment, precise dynamic control is achieved. The functional chip is a wide bandgap semiconductor device with a large bandgap and high defect formation energy, which can effectively suppress the generation of radiation-induced carriers and lattice defects, and further improve the radiation resistance of the entire chip system.

[0007] The functional chip can be a chip composed of wide bandgap semiconductor (such as silicon carbide, gallium nitride, gallium oxide, aluminum nitride, diamond) based devices (including various types of diodes, transistors, field-effect transistors, etc.), and can realize functions including detection (mainly light, radiation, etc.), logic operation, storage, etc. The dielectric thermally conductive layer is made of a high thermal conductivity insulating material, and can be any one or a combination of aluminum nitride, beryllium oxide, diamond film, boron nitride, and silicon carbide. The thickness of the dielectric thermally conductive layer is 0.1. -10 ; The dielectric thermally conductive layer is distributed in an array one-to-one between the RF heater and the functional chip, serving both thermal conductivity and electrical insulation functions. The radio frequency heater precisely controls the local temperature distribution and heating rate by adjusting the frequency or power of the radio frequency signal: by lowering the frequency, the penetration depth of the electromagnetic wave is increased, thus achieving bulk heating of thicker functional chips; conversely, by increasing the frequency, the penetration depth is reduced, so that energy is concentrated on the thin surface layer, thus achieving rapid surface annealing; the heating rate and steady-state temperature are directly controlled by dynamically adjusting the power, with high power used in the initial stage to achieve rapid heating, and low power used in the later stage for stabilization. The operating frequency of the radio frequency heater can be continuously or segmentally adjusted within the range of 1kHz-1GHz; The output power of the radio frequency heater can be continuously or segmentally adjusted within the range of 1mW-50W; The material of the radio frequency heater is selected from metals such as copper, tungsten, molybdenum, and platinum. Preferably, the material of the selected radio frequency heater is platinum. The radio frequency heater employs multiple independently addressed heater units, which are equally spaced. Each heater unit can have a spiral, serpentine, finger-shaped, or ring-shaped structure to achieve precise localization of heat and optimize heating efficiency and speed. The localization refers to the precise confinement of the heat generated by each heater unit within a sensitive area of ​​the functional chip that is susceptible to radiation damage. The thickness of the metal layer in the heater unit is 0.1. -5 The row spacing and column spacing of the radio frequency heater unit are 5. -20 ; For the spiral or serpentine RF heater unit, its characteristic dimensions include linewidth and line spacing; the linewidth is 1. -50 The line spacing is 1. -10 ; For the finger-shaped radio frequency heater unit, its characteristic dimensions include finger width, finger spacing, and finger length; the finger width is 1. -10 The finger spacing is 1. -10 The finger length is 1 -20 ; For the aforementioned annular RF heater unit, its characteristic dimensions include linewidth and ring radius; the linewidth is 1. -10 The radius of the ring is 10. -20 ; The temperature sensor is implemented using the well structure inherent in standard CMOS technology. Specifically, an N-type well or a P-type well is formed by ion implantation in the dielectric thermally conductive layer, and then a P+ / N well structure or an N+ / P well diode structure is fabricated. PN junction diodes with constant current injection Under these conditions, its forward pressure drop and junction temperature satisfy , It is the reverse saturation current. For electron charge, As an ideal factor, The temperature is calculated by measuring its forward pressure drop or the pressure difference under different currents; The temperature sensor is spatially associated with the radio frequency heater and is also configured as a distributed array, forming an independent closed-loop control loop with the on-chip monitoring circuit. The heat insulation substrate is made of gallium oxide, sapphire, or quartz glass, which are low thermal conductivity insulating materials; the thickness of the heat insulation substrate is 100 mm. -1000

[0008] A method for using a chip system that autonomously repairs radiation damage includes the following steps; Step 1): The on-chip monitoring circuit built into the functional chip reads the leakage current of the functional chip every 10 minutes. When the leakage current exceeds the set threshold range, the annealing program is automatically triggered and started. Step 2): After the annealing program starts, it will determine the location of the functional chip that needs to be annealed based on the source of the degradation parameters, send an enable signal to the RF heater located below the functional chip, and load the preset annealing program. The preset annealing temperature is 400℃ to 600℃, the heating power is 0.5W to 5W, and the annealing time is 5 minutes. Step 3): During the annealing process, the temperature sensor integrated with the RF heater collects local temperature data in real time and compares it with the preset target temperature to dynamically adjust the output power of the RF heater; Step 4): After the preset annealing time is reached, heating is stopped. After the functional chip cools down, the on-chip monitoring circuit checks the performance parameters again to verify whether the annealing is effective. The decision to anneal again is based on whether the leakage current detected again is still higher than the performance degradation threshold of the device. Step 5): If the leakage current detected again has returned to the normal range, the entire process terminates and the system returns to normal monitoring status; if the performance parameters still have not recovered, repeat the annealing process from step 2 to step 4; if the performance still has not recovered after reaching the maximum number of repetitions, the system determines that the repair has failed and reports an error flag to avoid invalid operations.

[0009] The beneficial effects of this invention are: 1. This invention integrates an RF heater under a functional chip that is prone to radiation damage, precisely concentrating heat on the area that needs repair. This achieves precise, localized annealing, reaching the target annealing temperature with the lowest possible power consumption, while also avoiding catastrophic damage to other areas and devices, thus preventing the entire chip from failing.

[0010] 2. This invention integrates RF heaters, temperature sensors, and thermal insulation substrates using micromachining technology and CMOS-compatible materials to achieve on-chip annealing functionality. It features small size, light weight, and low power consumption, making it possible to repair cumulative radiation damage on-orbit, in real-time, and autonomously. This perfectly meets the stringent requirements of aerospace applications for electronic systems, significantly extending the on-orbit lifespan of aerospace electronic systems and reducing launch costs.

[0011] 3. The typical workflow of this invention can realize fully automatic closed-loop control and autonomous decision-making. The entire repair process, from damage detection and annealing to effect verification, can be completed independently by the on-chip system without external intervention. It can autonomously cope with sudden performance degradation, greatly improving the reliability of aerospace systems in long-term missions. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of a micro radio frequency heater array for the on-chip annealing system of the present invention.

[0013] Figure 2 This is a schematic diagram of the radio frequency heater unit of the on-chip annealing system of the present invention.

[0014] Figure 3 This is a schematic diagram of the closed-loop control of the on-chip annealing system of the present invention.

[0015] Figure 4 This is a cross-sectional view of the core structure of a specific embodiment of the on-chip annealing system of the present invention. Detailed Implementation

[0016] The present invention will now be described in further detail with reference to the accompanying drawings.

[0017] A chip system for autonomously repairing radiation damage includes a functional chip 1, a temperature sensor 2, a dielectric thermally conductive layer 3, an RF heater 4, and a thermally insulating substrate 5; the functional chip 1 serves as the target area for annealing, and an on-chip monitoring circuit is placed inside the functional chip 1. The dielectric thermally conductive layer 3 serves as a bridging layer to transfer the heat generated by the radio frequency heater 4 to the functional chip 1. At the same time, the dielectric thermally conductive layer 3 also provides electrical insulation for the functional chip 1. The radio frequency heater 4 is based on the principle of radio frequency heating. It uses a high-frequency alternating electromagnetic field to generate eddy currents or polar molecules to periodically orient and cause hysteresis loss, thereby generating heat to provide a heat source for annealing repair. The temperature sensor 2 is used to monitor the temperature of the target area where annealing is performed in real time. The heat insulation substrate 5 is used to reduce the downward heat loss of the system and reduce the impact on other chips. The on-chip monitoring circuit uses a PID controller to compare the temperature signal sensed by the temperature sensor 2 with the preset target area annealing temperature value, and adjusts the electrical power applied to the radio frequency heater 4 according to the instantaneous error. Through continuous reading, comparison and adjustment, precise dynamic control is achieved. The functional chip 1 is a wide bandgap semiconductor device with a large bandgap and high defect formation energy, which can effectively suppress the generation of radiation-induced carriers and lattice defects, and further improve the radiation resistance of the entire chip system.

[0018] The dielectric thermally conductive layer 3 is made of a high thermal conductivity insulating material, and can be any one or a combination of aluminum nitride, beryllium oxide, diamond film, boron nitride, and silicon carbide. The thickness of the dielectric thermally conductive layer 3 is 0.1 mm. -10 Preferably, the thickness is 2. -5 .

[0019] The radio frequency heater 4 precisely controls the local temperature distribution and heating rate by adjusting the frequency or power of the radio frequency signal: by reducing the frequency, the penetration depth of the electromagnetic wave is increased, thereby achieving bulk heating of the thicker functional chip 1; conversely, by increasing the frequency, the penetration depth is reduced, so that the energy is concentrated on the thin surface layer, thereby achieving rapid surface annealing; the heating rate and steady-state temperature are directly controlled by dynamically adjusting the power. In the initial stage, high power is used to achieve rapid heating, and in the later stage, low power is used for stabilization. The operating frequency of the radio frequency heater 4 can be continuously or segmented within the range of 1kHz-1GHz. Preferably, the operating frequency is set to 60kHz-500kHz to localize the heating range using the skin effect. The output power of the radio frequency heater 4 can be continuously or segmentally adjusted within the range of 1mW-50W. Preferably, the output power is set to 1W-50W, which allows the functional chip 1 area to be heated to the target temperature within seconds or even milliseconds. The material of the radio frequency heater 4 includes one of the following metals: copper, tungsten, molybdenum, and platinum. Preferably, the material of the radio frequency heater 4 is platinum.

[0020] The radio frequency heater 4 employs multiple independently addressed heater units, which are equally spaced. Each heater unit can have a spiral, serpentine, finger-shaped, or ring-shaped structure to achieve precise localization of heat and optimize heating efficiency and speed. The thickness of the metal layer in the heater unit is 0.1. -5 The row spacing and column spacing of the radio frequency heater unit are 5. -20 .

[0021] like Figure 2 As shown, for the spiral or serpentine RF heater unit, its characteristic dimensions include linewidth and line spacing; the linewidth is 1. -50 The line spacing is 1. -10 ; For the finger-shaped radio frequency heater unit, its characteristic dimensions include finger width, finger spacing, and finger length; the finger width is 1. -10 The finger spacing is 1. -10 The finger length is 1 -20 ; For the aforementioned annular RF heater unit, its characteristic dimensions include linewidth and ring radius; the linewidth is 1. -10 The radius of the ring is 10. -20 ; The temperature sensor 2 is implemented using the inherent well structure in standard CMOS technology. Specifically, an N-type well or a P-type well is formed in the dielectric thermally conductive layer 3 by ion implantation, and then a P+ / N well structure or an N+ / P well diode structure is fabricated. PN junction diodes with constant current injection Under these conditions, its forward pressure drop and junction temperature satisfy , It is the reverse saturation current. For electron charge, As an ideal factor, The temperature is calculated by measuring its forward pressure drop or the pressure difference under different currents; The temperature sensor 2 is spatially associated with the radio frequency heater 4 and is also configured as a distributed array, forming an independent closed-loop control circuit with the on-chip monitoring circuit.

[0022] The heat insulation substrate 5 is made of gallium oxide, sapphire, or quartz glass, which are low thermal conductivity insulating materials; the thickness of the heat insulation substrate 5 is 100 mm. -1000 Preferably, a thickness of 300 mm is used. -500 Gallium oxide substrate.

[0023] like Figure 1As shown, the micro heater is formed directly below the functional chip 1, which is susceptible to radiation damage, using standard or improved processes during the semiconductor chip manufacturing process; The working principle of this radio frequency heater 4 is based on radio frequency induction heating, that is, eddy currents are induced in the conductive layer by an external radio frequency electromagnetic field, thereby achieving energy absorption and heat generation in a local area. By adjusting the frequency, power or duty cycle of the radio frequency signal, the local temperature distribution and heating rate can be precisely controlled. This micro heater provides thermal energy to activate the migration, annihilation, transformation and decomposition of irradiation defects, thereby effectively repairing material damage, restoring electrical properties, and ultimately realizing on-chip annealing and chip autonomous repair.

[0024] like Figure 3 As shown, the specific workflow of this invention is as follows: Step 1): The on-chip monitoring circuit built into the functional chip 1 reads the leakage current of the functional chip 1 every 10 minutes. When the leakage current exceeds the set threshold range, the annealing program is automatically triggered and started. Step 2): After the annealing program starts, it will determine the location of the functional chip 1 that needs to be annealed based on the source of the degradation parameters, send an enable signal to the RF heater 4 located below the functional chip 1, and load the preset annealing program. The preset annealing temperature is 400℃ to 600℃, the heating power is 0.5W to 5W, and the annealing time is 5 minutes. Step 3): During the annealing process, the temperature sensor 2 integrated with the RF heater unit collects local temperature data in real time and compares it with the preset target temperature, dynamically adjusting the output power of the RF heater 4. Step 4): After the preset annealing time is reached, heating is stopped. After the functional chip 1 cools down, the on-chip monitoring circuit detects the performance parameters again to verify whether the annealing is effective. The decision to anneal again is based on whether the leakage current detected again is still higher than the performance degradation threshold of the device. Step 5): If the leakage current detected again has returned to the normal range, the entire process terminates and the system returns to normal monitoring status; if the performance parameters still have not recovered, repeat the annealing process from step 2 to step 4; if the performance still has not recovered after reaching the maximum number of repetitions, the system determines that the repair has failed and reports an error flag to avoid invalid operations.

[0025] Example: like Figure 4 As shown, the specific components of this example are as follows: 1. Thermal insulation substrate 5: The thermal insulation substrate 5 has a thickness of 500 mm. Commercial Gallium oxide provides mechanical support and thermal insulation for the entire structure; 2. Radio Frequency Heater 4: A spiral array of radio frequency heaters 4, consisting of a 300nm platinum conductive layer, was fabricated on a gallium oxide thermally insulating substrate 5 using sputtering and lift-off processes. The spiral design has a linewidth of 15nm. The spacing is 10. The row and column spacing of each unit is 25. To achieve a uniform in-plane thermal field distribution; 3. Temperature sensor 2: The temperature sensor 2 is a PN junction diode. It forms a P-type region by high-energy ion implantation of nitrogen (N) or magnesium (Mg) ions in a designated area on the silicon carbide dielectric thermally conductive layer 3, and forms a P+ / N well junction diode with the inherent N-type gallium oxide substrate; 4. Dielectric thermally conductive layer 3: A 1.5-meter layer is grown above the RF heater 4 using chemical vapor deposition and patterning techniques. The thick silicon carbide dielectric thermally conductive layer 3 provides electrical insulation for the system while efficiently and uniformly transferring the heat generated by the radio frequency heater 4 upwards. 5. Functional Chip 1: A gallium oxide-based high electron mobility transistor is integrated as functional chip 1 through processes such as heteroepitaxial growth or wafer bonding. Its active region faces the spiral RF heater 4 below. The CMOS-compatible process involved in the radio frequency heater 4, temperature sensor 2, and dielectric thermal conductive layer 3 enables the on-chip annealing function, which has the advantages of small size, light weight, and low power consumption, and can significantly extend the on-orbit life of aerospace electronic systems and reduce launch costs.

[0026] The above descriptions are merely a few preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A chip system for autonomously repairing radiation damage, characterized in that, It includes a temperature sensor (2), a dielectric thermally conductive layer (3), an RF heater (4), and a thermally insulating substrate (5). The dielectric thermally conductive layer (3) serves as a bridging layer to transfer the heat generated by the radio frequency heater (4) to the functional chip (1), while the dielectric thermally conductive layer (3) provides electrical insulation for the functional chip (1). The functional chip (1) serves as the target area for annealing, and an on-chip monitoring circuit is placed inside the functional chip (1). The radio frequency heater (4) uses a high-frequency alternating electromagnetic field to generate eddy currents or polar molecules to periodically orient and cause hysteresis loss, thereby generating heat to provide a heat source for annealing repair. The temperature sensors (2) are distributed near the functional units of the functional chip (1) that are susceptible to radiation damage or are actively operating, and are used to monitor the temperature of the target area where annealing is performed in real time. The thermal insulation substrate (5) is used to reduce the downward heat loss of the system and reduce the impact on other chips; The on-chip monitoring circuit uses a PID controller to compare the temperature signal sensed by the temperature sensor (2) with the preset target area annealing temperature value, and adjusts the electrical power applied to the radio frequency heater (4) according to the instantaneous error. Through continuous reading, comparison and adjustment, precise dynamic control is achieved.

2. The chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The functional chip (1) is a wide bandgap semiconductor device with a large bandgap and high defect formation energy, used to suppress the generation of radiation-induced carriers and lattice defects; The functional chip (1) is a chip composed of wide bandgap semiconductor-based devices, and its functions include detection, logic operation and storage.

3. The chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The dielectric thermally conductive layer (3) is made of a high thermal conductivity insulating material, and can be any one or a combination of aluminum nitride, beryllium oxide, diamond film, boron nitride, and silicon carbide. The thickness of the dielectric thermally conductive layer (3) is 0.

1. -10 ; The dielectric thermally conductive layer (3) is distributed in an array one-to-one between the radio frequency heater (4) and the functional chip (1), serving both thermal conductivity and electrical insulation functions.

4. The chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The radio frequency heater (4) precisely controls the local temperature distribution and heating rate by adjusting the frequency or power of the radio frequency signal: by reducing the frequency to increase the penetration depth of the electromagnetic wave, the bulk heating of the thicker functional chip (1) is achieved; conversely, by increasing the frequency to reduce the penetration depth, the energy is concentrated on the surface thin layer to achieve rapid surface annealing; the heating rate and steady-state temperature are directly controlled by dynamically adjusting the power. In the initial stage, high power is used to achieve rapid heating, and in the later stage, low power is used to stabilize the temperature. The operating frequency of the radio frequency heater (4) can be continuously or segmentally adjusted within the range of 1kHz-1GHz; The output power of the radio frequency heater (4) can be continuously or segmentally adjusted within the range of 1mW-50W; The material of the radio frequency heater (4) is selected from copper, tungsten, molybdenum and platinum.

5. A chip system for autonomously repairing radiation damage according to claim 4, characterized in that, The radio frequency heater (4) uses multiple heater units with independent addressing. The heater units are arranged at equal intervals. The structure of each heater unit is spiral, serpentine, finger-shaped or ring-shaped, so as to achieve precise localization of heat and optimize heating efficiency and speed. The localization refers to the precise confinement of the heat generated by each heater unit within the sensitive area of ​​the functional chip (1) that is susceptible to radiation damage; The thickness of the metal layer in the heater unit is 0.

1. -5 The row spacing and column spacing of the radio frequency heater unit are 5. -20 .

6. The chip system for autonomously repairing radiation damage according to claim 5, characterized in that, For the spiral or serpentine RF heater unit, its characteristic dimensions include linewidth and line spacing; the linewidth is 1. -50 The line spacing is 1. -10 ; For the finger-shaped radio frequency heater unit, its characteristic dimensions include finger width, finger spacing, and finger length; the finger width is 1. -10 The finger spacing is 1. -10 The finger length is 1 -20 ; For the aforementioned annular RF heater unit, its characteristic dimensions include linewidth and ring radius; the linewidth is 1. -10 The radius of the ring is 10. -20 .

7. A chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The temperature sensor (2) is realized using the inherent trap structure in the standard CMOS process. An N-type trap or a P-type trap is formed by ion implantation in the dielectric thermally conductive layer (3), and then a P+ / N trap structure or an N+ / P trap diode structure is fabricated. PN junction diodes with constant current injection Under these conditions, its forward pressure drop and junction temperature satisfy , It is the reverse saturation current. For electron charge, As an ideal factor, The temperature is calculated by measuring its forward pressure drop or the pressure difference under different currents.

8. A chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The temperature sensor (2) is spatially associated with the radio frequency heater (4) and is also configured as a distributed array, forming an independent closed-loop control loop with the on-chip monitoring circuit.

9. A chip system for autonomously repairing radiation damage according to claim 1, characterized in that, The heat insulation substrate (5) is made of gallium oxide, sapphire, or quartz glass, which are low thermal conductivity insulating materials; the thickness of the heat insulation substrate (5) is 100 mm. -1000 .

10. A method of using a chip system for autonomously repairing radiation damage according to any one of claims 1-9, characterized in that, Includes the following steps; Step 1): The on-chip monitoring circuit built into the functional chip (1) reads the leakage current of the functional chip (1) every 10 minutes. When the leakage current exceeds the set threshold range, the annealing program is automatically triggered and started. Step 2): After the annealing program starts, it will determine the position of the functional chip (1) that needs to be annealed based on the source of the degradation parameters, send an enable signal to the RF heater (4) located below the functional chip (1), load the preset annealing program, the preset annealing temperature is 400℃ to 600℃, the heating power is 0.5W to 5W, and the annealing time is 5 minutes. Step 3): During the annealing process, the temperature sensor (2) integrated with the radio frequency heater (4) collects local temperature data in real time and compares it with the preset target temperature, and dynamically adjusts the output power of the radio frequency heater (4); Step 4): After the preset annealing time is reached, heating is stopped. After the functional chip (1) cools down, the on-chip monitoring circuit detects the performance parameters again to verify whether the annealing is effective. The decision to anneal again is based on whether the leakage current detected again is still higher than the performance degradation threshold of the device. Step 5): If the leakage current detected again has returned to the normal range, the entire process terminates and the system returns to normal monitoring status; If the performance parameters still do not recover, repeat the annealing process from step two to step four. If performance does not recover after reaching the maximum number of repetitions, the system determines that the repair has failed and reports an error flag to avoid invalid operations.

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