Damascus film layer structure and preparation method thereof

By depositing Si3N4, SiO2, and SiOxNy films at different temperatures using PECVD, a gradient-density three-layer dielectric structure was constructed. This solved the reliability and etching selectivity issues of the damask film under different temperature conditions, achieving high-precision etching and a stable multilayer interconnect structure.

CN121666061APending Publication Date: 2026-03-13ZHUHAI TIANCHENG ADVANCED SEMICON TECH CO LTD
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Patent Information

Application Number
CN202511931469.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-19
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

Existing damascus film deposition processes struggle to balance film density, stress control, and interface stability under varying temperature conditions, leading to reliability fluctuations and defect generation issues in advanced packaging and 3D integration applications.

Method used

Using PECVD deposition technology, a three-layer dielectric structure with gradient density and functional differentiation was constructed by depositing a Si3N4 film at 350℃ as a stop layer, a SiO2 layer at 180℃ as a damascus patterning layer, and a SiOxNy film at 400℃ as a dielectric antireflection layer. By combining different temperatures and process parameters, the photoresist selectivity during the etching process was optimized.

Benefits of technology

It achieves a high-density, low-stress, and strong-bonding multilayer interconnect structure, improves etching accuracy and process stability, solves the over-etching problem, and enhances the structural stability and electrical performance of semiconductor devices.

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Abstract

The invention discloses a Damascus film layer structure and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing. The method adopts a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, and Si3N4 is deposited on a copper substrate at 350 DEG C to serve as SiO2 is deposited on the stop layer at the temperature of 180 DEG C to serve as a graphical layer; siOxNy is deposited at the temperature of 400 DEG C to serve as a dielectric anti-reflection layer. By regulating and controlling the deposition temperature difference between different layers, the SiO2 layer formed at a low temperature has relatively low density and shows a higher etching rate during etching, so that the selection ratio of photoresist to oxides is remarkably improved. The structure effectively inhibits excessive etching, realizes accurate etching termination and high-quality pattern transfer, and is suitable for high-performance copper interconnection process requirements.
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