A method for preparing a corrosion-resistant coating for electronic components in a marine environment

Abstract

The application relates to the field of coating preparation and discloses a preparation method of a corrosion-resistant coating of an electronic component in a marine environment, which comprises the following steps: S1: ion implantation mixed layer: ion implantation technology is used to combine a layer on the surface of the prepared component, the implanted elements are Cu, Ni, Cr and Ag metal elements, a uniform and strongly combined mixed layer is formed on the surface of the electronic component by implanting the Cu, Ni, Cr and Ag metal elements, and the combination strength and compactness of the coating can be greatly improved by forming a dense film on the substrate by using high-power pulse magnetron sputtering technology; on the basis, a conductive layer is prepared by high-power magnetron and a corrosion-resistant layer is deposited by high-power pulse magnetron sputtering technology, the coating prepared by the method has strong combination strength and corrosion resistance, and the quality of the electronic component is not affected by the problems of high deposition temperature of multi-arc ion plating, large particles in the film forming process and the like.

Description

Technical Field

[0001] This invention relates to the field of coating preparation, and more particularly to a method for preparing a corrosion-resistant coating for electronic components in a marine environment. Background Technology

[0002] Corrosion-resistant coatings for electronic components in marine environments are specifically designed to protect electronic components from corrosion. These coatings typically possess properties such as resistance to salt spray, moisture, ultraviolet radiation, and chemicals, effectively extending the lifespan of electronic components and maintaining their stable performance.

[0003] The patent application No. 201510875353.0 discloses "a corrosion-resistant coating material composition and a method for preparing a corrosion-resistant coating." This application addresses the problem that existing coatings often only provide waterproofing and cannot resist corrosive substances in the environment. However, current coating preparation technologies mainly employ methods such as painting, coating, and nickel plating. These methods have limited protective effects or are difficult to meet the requirements of high conductivity and corrosion resistance for electronic components. In practice, some coatings are prepared using chemical vapor deposition (CVD) and physical vapor deposition (PVD). However, CVD technology is generally accompanied by high temperatures, which can affect the overall performance of the material and cause environmental problems. Common PVD techniques include magnetron sputtering and multi-arc ion plating. However, magnetron sputtering has low atomic ionization rate and low energy, resulting in weak coating adhesion. Multi-arc ion plating has high deposition temperatures and large particles during film formation, which can seriously affect the quality of electronic components. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a method for preparing a corrosion-resistant coating for electronic components in a marine environment, solving the problem that current corrosion-resistant coatings cannot meet the requirements of high conductivity and corrosion resistance for electronic components in a marine environment.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a method for preparing a corrosion-resistant coating for electronic components in a marine environment, comprising the following steps:

[0006] S1: Ion Implanted Hybrid Layer: An ion implantation technique is used to prepare a bonding layer on the surface of the component. The implanted elements are Cu, Ni, Cr, and Ag metal elements. These ions have high energy and can penetrate the atomic layer on the surface of the component, interact with the atoms of the component substrate, and form a strong chemical bond, thereby forming a uniform hybrid layer below the surface of the component. The implantation voltage is 3kV-10kV, the arc current is 40A-90A, and the beam current is 3-8mA, so that a uniform and strongly bonded hybrid layer is formed on the surface of the component.

[0007] S2: High-power magnetron sputtering layer: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is a Cu target. Under the action of high-voltage pulsed discharge, the Cu target material can generate a large number of sputtering particles. These particles have high energy and can form a dense film on the substrate. The Ar gas flow rate is 80-200 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, and the negative bias voltage is 800V, 600V, and 400V, sputtering for 30 seconds each, making the sputtering process more uniform and with better results.

[0008] S3: High-power magnetron sputtering for conductive layer deposition: High-power pulsed magnetron sputtering is used to deposit a conductive layer on the surface. The selected target is a Cu target, the Ar gas flow rate is 80-200 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, the negative bias voltage is 50 V, and the deposition thickness is 1-5 μm. This allows a coating with good conductivity to be formed on top of the mixed layer on the surface of the component.

[0009] S4: High-power magnetron sputtering for corrosion-resistant conductive layer: The corrosion-resistant layer is deposited using high-power pulsed magnetron sputtering technology. A splicing method is used to prepare the high-entropy target. By splicing, multiple metal elements or their alloys can be combined. These elements have complementary effects in corrosion resistance, which can improve the overall performance of the corrosion-resistant layer. The interaction between elements will weaken the poor performance of individual elements and improve the overall performance. The width of each metal strip is 2cm. The splicing metals are any 3-5 of Cu, Ti, Al, V, Ag, Cr, Ni metal elements or their alloys. The target rotation speed is 5-10 rad / min, the Ar gas flow rate is 100-500 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, the negative bias voltage is 50 V, and the deposition thickness is 20-100 nm.

[0010] Preferably, in step S1, the surface of the component is first pretreated, including cleaning, degreasing, and polishing, to remove surface dirt and oxides and improve surface roughness, which is beneficial to the ion implantation process. Then, a hybrid layer is formed on the surface of the component using ion implantation technology. The implanted elements include Cu, Ni, Cr, and Ag metal elements. During the implantation process, the ion implantation voltage is controlled within the range of 3kV-10kV to ensure that the energy and depth of the implanted elements are appropriate. The arc current is controlled within the range of 40A-90A to ensure the stability and uniformity of the implantation process. The beam current is controlled within the range of 3-8mA to achieve precise control of the number and concentration of implanted elements.

[0011] Preferably, in step S1, during the ion implantation process, the implantation angle, implantation rate, and ion energy parameters can be adjusted to achieve uniform distribution of implanted elements and optimize coating performance. Finally, the surface of the implanted component is cleaned and dried to remove residual ion implantation material and moisture, and to prepare for the next step of coating preparation.

[0012] Preferably, in step S2, the pretreated components are placed in a high-power magnetron sputtering device and subjected to sputtering bombardment. The selected target material is a Cu target because copper has good conductivity and corrosion resistance, making it suitable as a coating material. During the sputtering process, the Ar gas flow rate is controlled within the range of 80-200 sccm to ensure the stability and uniformity of the sputtering atmosphere. At the same time, the sputtering power is adjusted within the range of 3-5 kW to achieve uniform deposition and good adhesion of the coating.

[0013] Preferably, in step S2, during the sputtering process, by precisely controlling sputtering parameters such as sputtering rate, sputtering time, and gas flow rate, the uniformity, density, and performance of the coating can be optimized. Finally, the surface of the sputtered component is cleaned and dried to remove residual sputtering material and moisture.

[0014] Preferably, in step S3, the high-power pulsed magnetron sputtering technology specifically includes a high-power pulsed magnetron sputtering device, a target (Cu target), a gas flow controller, a power supply, and a vacuum pump.

[0015] Preferably, in step S3, pre-sputtering is performed before the formal sputtering to remove contaminants and oxides from the target surface and to bring the target surface to a stable state.

[0016] Preferably, in step S3, the components processed in step S2 are placed in a high-power magnetron sputtering device to prepare for conductive layer deposition. Then, the Ar gas flow rate is adjusted to the range of 80-200 sccm to ensure the stability and uniformity of the sputtering atmosphere. At the same time, the sputtering power is set to the range of 3-5 kW to achieve uniform deposition and good adhesion of the coating. The frequency is controlled at 50-300 Hz to adjust the sputtering rate and coating uniformity. The negative bias voltage is set to 50 V to achieve precise thickness control and optimized performance of the coating.

[0017] Preferably, in step S4, the specific steps for preparing the corrosion-resistant conductive layer using high-power pulsed magnetron sputtering technology are as follows:

[0018] Prepare experimental equipment, including a high-power pulsed magnetron sputtering device, target material (spliced ​​high-entropy target material), gas flow controller, power supply, and vacuum pump;

[0019] Determine the experimental parameters: According to the experimental requirements, set the Ar gas flow rate to 100-500 sccm, the power to 3-5 kW, the frequency to 50-300 Hz, the negative bias voltage to 50 V, and the deposition thickness to 20-100 nm.

[0020] Set up the experimental vacuum system: Install the target material in the sputtering chamber of the high-power pulsed magnetron sputtering device, connect the gas flow controller, power supply, and vacuum pump equipment, and check the airtightness;

[0021] Evacuation: Start the vacuum pump to reduce the pressure in the sputtering chamber to a suitable working vacuum level (usually 10^-3 Pa).

[0022] Pre-sputtering: Before the actual sputtering, pre-sputtering is performed to remove contaminants and oxides from the target surface and to bring the target surface to a stable state.

[0023] Formal sputtering: Turn on the high-power pulsed magnetron sputtering device and perform sputtering deposition according to the set parameters to prepare an anti-corrosion conductive layer;

[0024] Monitoring during the deposition process: Real-time observation of plasma state, deposition rate, and film thickness parameters during sputtering; experimental parameters can be adjusted as needed.

[0025] Deposition complete: After reaching the predetermined deposition thickness, shut down the high-power pulsed magnetron sputtering device and stop sputtering;

[0026] Sample removal: After the air pressure in the sputtering chamber returns to atmospheric pressure, remove the prepared anti-corrosion conductive layer sample;

[0027] Post-processing: If performance testing or further treatment of the anti-corrosion conductive layer is required, corresponding post-processing operations can be performed.

[0028] Preferably, in step S4, an anti-corrosion coating is prepared on the surface of a silicon wafer, and the prepared anti-corrosion coating sample is exposed to a corrosive environment, such as salt water or acid / alkali solution, and the film-substrate adhesion is tested. Beneficial effects

[0029] This invention provides a method for preparing a corrosion-resistant coating for electronic components in a marine environment. Compared with existing technologies, it has the following advantages:

[0030] In this invention, a uniform and strongly bonded mixed layer is formed on the surface of electronic components by ion implantation of Cu, Ni, Cr, and Ag metal elements, and a dense thin film is formed on the substrate by high-power pulsed magnetron sputtering technology, which greatly improves the bonding strength and density of the coating. On this basis, a conductive layer is prepared by high-power magnetron sputtering and an anti-corrosion layer is deposited by high-power pulsed magnetron sputtering technology, so that a coating with good conductivity is formed on the mixed layer on the surface of the component. By splicing, multiple metal elements or their alloys can be combined together. These elements have complementary effects in anti-corrosion performance, which can improve the overall performance of the anti-corrosion layer. The interaction between elements will weaken the poor performance of individual elements and improve the overall performance. Thus, the electronic components can meet the requirements of high conductivity and corrosion resistance in marine environments. Splicing multi-element targets can achieve multi-element and multi-proportion control of elements. This layer not only has high corrosion resistance but also good conductivity. The coating prepared by this method has strong bonding and corrosion resistance and is not affected by the high deposition temperature of multi-arc ion plating and the large particles during the film formation process, which affect the quality of electronic components. Attached Figure Description

[0031] Figure 1 This is a flowchart of a method for preparing a corrosion-resistant coating for electronic components in a marine environment, as proposed in this invention. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] Please see Figure 1 The present invention provides the following technical solutions, specifically including the following embodiments: Example 1

[0034] A method for preparing a corrosion-resistant coating for electronic components in a marine environment includes the following steps:

[0035] S1: The bonding layer on the surface of the component is prepared by ion implantation technology. The implanted element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA.

[0036] S2: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is Cu target, the Ar gas flow rate is 150 sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is 800V, 600V, and 400V for 30s each.

[0037] S3: High-power pulsed magnetron sputtering technology is used to deposit a conductive layer on the surface. The selected target is a Cu target, the Ar gas flow rate is 150 sccm, the power is 4 kW, the frequency is 200 Hz, the negative bias voltage is 50 V, and the deposition thickness is 3 μm.

[0038] S4: High-power pulsed magnetron sputtering technology is used to deposit the anti-corrosion layer. High-entropy target material is prepared by splicing. The width of each metal strip is 2cm. The splicing metals are Cu, Ti, Al, V and Ag. The target rotation speed is 5rad / min, the Ar gas flow rate is 300sccm, the power is 4kW, the frequency is 200Hz, the negative bias voltage is 50V, and the deposition thickness is 50nm. Example 2

[0039] A method for preparing a corrosion-resistant coating for electronic components in a marine environment includes the following steps:

[0040] S1: The bonding layer on the surface of the component is prepared by ion implantation technology. The implanted element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA.

[0041] S2: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is Cu target, the Ar gas flow rate is 150 sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is 800V, 600V, and 400V, with each sputtering lasting 30s.

[0042] S3: High-power pulsed magnetron sputtering technology is used to deposit a surface conductive layer. The selected target is a Cu target, the Ar gas flow rate is 150 sccm, the power is 4 kW, the frequency is 200 Hz, the negative bias voltage is 50 V, and the deposition thickness is 3 μm.

[0043] S4: High-power pulsed magnetron sputtering technology is used to deposit the anti-corrosion layer. High-entropy target material is prepared by splicing. The width of each metal strip is 2cm. The splicing metals are Cu, Cr and Al metal elements. The target rotation speed is 5rad / min, the Ar gas flow rate is 300sccm, the power is 4kW, the frequency is 200Hz, the negative bias voltage is 50V, and the deposition thickness is 50nm. Example 3

[0044] A method for preparing a corrosion-resistant coating for electronic components in a marine environment includes the following steps:

[0045] S1: The bonding layer on the surface of the component is prepared by ion implantation technology. The implanted element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA.

[0046] S2: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is Cu target, the Ar gas flow rate is 150 sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is 800V, 600V, and 400V, with each sputtering lasting 30s.

[0047] S3: High-power pulsed magnetron sputtering technology is used to deposit a surface conductive layer. The selected target is a Cu target, the Ar gas flow rate is 150 sccm, the power is 4 kW, the frequency is 200 Hz, the negative bias voltage is 50 V, and the deposition thickness is 3 μm.

[0048] S4: High-power pulsed magnetron sputtering technology is used to deposit the anti-corrosion layer. High-entropy target material is prepared by splicing. The width of each metal strip is 2cm. The splicing metals are Cu, Cr, Al, V and Ag. The target rotation speed is 5rad / min, the Ar gas flow rate is 300sccm, the power is 4kW, the frequency is 200Hz, the negative bias voltage is 50V, and the deposition thickness is 30nm.

[0049] Comparative Example 1

[0050] S1: None;

[0051] S2: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is Cu target, the Ar gas flow rate is 150 sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is 800V, 600V, and 400V, with each sputtering lasting 30s.

[0052] S3: High-power pulsed magnetron sputtering technology is used to deposit a surface conductive layer. The selected target is a Cu target, the Ar gas flow rate is 150 sccm, the power is 4 kW, the frequency is 200 Hz, the negative bias voltage is 50 V, and the deposition thickness is 3 μm.

[0053] S4: High-power pulsed magnetron sputtering technology is used to deposit the anti-corrosion layer. High-entropy target material is prepared by splicing. The width of each metal strip is 2cm. The splicing metals are Cu, Cr, Al, V and Ag. The target rotation speed is 5rad / min, the Ar gas flow rate is 300sccm, the power is 4kW, the frequency is 200Hz, the negative bias voltage is 50V, and the deposition thickness is 30nm.

[0054] Comparative Example 2

[0055] S1: The bonding layer on the surface of the component is prepared by ion implantation technology. The implanted element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA.

[0056] S2 uses high-power pulsed magnetron sputtering technology for surface sputtering bombardment. The selected target material is Cu target, the Ar gas flow rate is 150 sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is 800V, 600V, and 400V for 30s each.

[0057] S3: High-power pulsed magnetron sputtering technology is used to deposit a surface conductive layer. The selected target is a Cu target, the Ar gas flow rate is 150 sccm, the power is 4 kW, the frequency is 200 Hz, the negative bias voltage is 50 V, and the deposition thickness is 3 μm.

[0058] S4: None.

[0059] The following are the film-substrate adhesion results for the above embodiments and comparative embodiments, where the substrate is a Si wafer:

[0060] Serial Number Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Bonding force N / mm 0.91 0.78 0.82 0.39 0.89 Surface resistance mΩ 25 36 26 26 20

[0061] The following are the percentages of corroded areas under the same area conditions after 24 hours of salt spray testing at 35℃:

[0062] Serial Number Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Percentage of corroded areas 35 30 18 Shedding 94

[0063] Based on the experimental data above, it can be concluded that ion implantation and high-power pulsed magnetron sputtering technology can greatly improve the bonding strength and density of the coating, resulting in fewer defects, lower roughness, and the ability to control the elements in multiple proportions by splicing multi-element targets. This layer not only has high corrosion resistance but also good electrical conductivity.

Claims

1. A method for preparing a corrosion-resistant coating for electronic components in a marine environment, characterized in that: Includes the following steps: S1: Ion Implanted Hybrid Layer: An ion implantation technique is used to prepare a bonding layer on the surface of the component. The implanted elements are Cu, Ni, Cr, and Ag metal elements. These ions have high energy and can penetrate the atomic layer on the surface of the component, interact with the atoms of the component substrate, and form a strong chemical bond, thereby forming a uniform hybrid layer below the surface of the component. The implantation voltage is 3kV-10kV, the arc current is 40A-90A, and the beam current is 3-8mA, so that a uniform and strongly bonded hybrid layer is formed on the surface of the component. S2: High-power magnetron sputtering layer: Surface sputtering bombardment is performed using high-power pulsed magnetron sputtering technology. The selected target material is a Cu target. Under the action of high-voltage pulsed discharge, the Cu target material can generate a large number of sputtering particles. These particles have high energy and can form a dense film on the substrate. The Ar gas flow rate is 80-200 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, and the negative bias voltage is 800V, 600V, and 400V for 30 seconds each, which makes the sputtering process more uniform and the effect better. S3: High-power magnetron sputtering for conductive layer deposition: High-power pulsed magnetron sputtering is used to deposit a conductive layer on the surface. The selected target is a Cu target, the Ar gas flow rate is 80-200 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, the negative bias voltage is 50 V, and the deposition thickness is 1-5 μm. This allows a coating with good conductivity to be formed on top of the mixed layer on the surface of the component. S4: High-power magnetron sputtering for corrosion-resistant conductive layer: The corrosion-resistant layer is deposited using high-power pulsed magnetron sputtering technology. A splicing method is used to prepare the high-entropy target. By splicing, multiple metal elements or their alloys can be combined. These elements have complementary effects in corrosion resistance, which can improve the overall performance of the corrosion-resistant layer. The interaction between elements will weaken the poor performance of individual elements and improve the overall performance. The width of each metal strip is 2cm. The splicing metals are any 3-5 of Cu, Ti, Al, V, Ag, Cr, Ni metal elements or their alloys. The target rotation speed is 5-10 rad / min, the Ar gas flow rate is 100-500 sccm, the power is 3-5 kW, the frequency is 50-300 Hz, the negative bias voltage is 50 V, and the deposition thickness is 20-100 nm.

2. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S1, the surface of the component is first pretreated, including cleaning, degreasing, and polishing, to remove dirt and oxides and improve surface roughness, which is beneficial to the ion implantation process. Then, a hybrid layer is formed on the surface of the component using ion implantation technology. The implanted elements include Cu, Ni, Cr, and Ag metal elements. During the implantation process, the ion implantation voltage is controlled within the range of 3kV-10kV to ensure that the energy and depth of the implanted elements are appropriate. The arc current is controlled within the range of 40A-90A to ensure the stability and uniformity of the implantation process. The beam current is controlled within the range of 3-8mA to achieve precise control of the number and concentration of implanted elements.

3. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S1, during the ion implantation process, the implantation angle, implantation rate, and ion energy parameters can be adjusted to achieve uniform distribution of implanted elements and optimize coating performance. Finally, the surface of the implanted component is cleaned and dried to remove residual ion implantation material and moisture, and to prepare for the next step of coating preparation.

4. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S2, the pretreated components are placed in a high-power magnetron sputtering device and sputtered. The selected target material is a Cu target because copper has good conductivity and corrosion resistance, making it suitable as a coating material. During the sputtering process, the Ar gas flow rate is controlled within the range of 80-200 sccm to ensure the stability and uniformity of the sputtering atmosphere. At the same time, the sputtering power is adjusted within the range of 3-5 kW to achieve uniform deposition and good adhesion of the coating.

5. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S2, during the sputtering process, by precisely controlling sputtering parameters such as sputtering rate, sputtering time, and gas flow rate, the uniformity, density, and performance of the coating can be optimized. Finally, the surface of the sputtered components is cleaned and dried to remove residual sputtering material and moisture.

6. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S3, the high-power pulsed magnetron sputtering technology specifically includes a high-power pulsed magnetron sputtering device, a Cu target, a gas flow controller, a power supply, and a vacuum pump.

7. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S3, before the formal sputtering, pre-sputtering is performed to remove contaminants and oxides from the target surface and to bring the target surface to a stable state.

8. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S3, the components processed in step S2 are placed in a high-power magnetron sputtering device to prepare for conductive layer deposition. The Ar gas flow rate is then adjusted to a range of 80-200 sccm to ensure the stability and uniformity of the sputtering atmosphere. Simultaneously, the sputtering power is set to a range of 3-5 kW to achieve uniform coating deposition and good adhesion. The frequency is controlled at 50-300 Hz to adjust the sputtering rate and coating uniformity. The negative bias voltage is set to 50 V to achieve precise thickness control and optimized performance of the coating.

9. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S4, the specific steps for preparing the corrosion-resistant conductive layer using high-power pulsed magnetron sputtering technology are as follows: Prepare experimental equipment, including a high-power pulsed magnetron sputtering device, spliced ​​high-entropy target, gas flow controller, power supply, and vacuum pump; Determine the experimental parameters: According to the experimental requirements, set the Ar gas flow rate to 100-500 sccm, the power to 3-5 kW, the frequency to 50-300 Hz, the negative bias voltage to 50 V, and the deposition thickness to 20-100 nm. Set up the experimental vacuum system: Install the target material in the sputtering chamber of the high-power pulsed magnetron sputtering device, connect the gas flow controller, power supply, and vacuum pump equipment, and check the airtightness; Evacuation: Start the vacuum pump to reduce the pressure inside the sputtering chamber to 10. -3 Working vacuum degree (Pa); Pre-sputtering: Before the actual sputtering, pre-sputtering is performed to remove contaminants and oxides from the target surface and to bring the target surface to a stable state. Formal sputtering: Turn on the high-power pulsed magnetron sputtering device and perform sputtering deposition according to the set parameters to prepare an anti-corrosion conductive layer; Monitoring during the deposition process: Real-time observation of plasma state, deposition rate, and film thickness parameters during sputtering; experimental parameters can be adjusted as needed. Deposition complete: After reaching the predetermined deposition thickness, shut down the high-power pulsed magnetron sputtering device and stop sputtering; Sample removal: After the air pressure in the sputtering chamber returns to atmospheric pressure, remove the prepared anti-corrosion conductive layer sample; Post-processing: If performance testing or further treatment of the anti-corrosion conductive layer is required, corresponding post-processing operations can be performed.

10. The method for preparing a corrosion-resistant coating for electronic components in a marine environment according to claim 1, characterized in that: In step S4, an anti-corrosion coating is prepared on the surface of a silicon wafer, and the prepared anti-corrosion coating sample is exposed to a corrosive environment, such as salt water or acid / alkali solution, and the film-substrate adhesion is tested.

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