Mask with frame and method for manufacturing organic device

Abstract

The invention relates to a mask with a frame and a manufacturing method of an organic device. A mask with a frame includes a first layer, a second layer, and a frame. The first layer includes at least one first opening penetrating from the first surface to the second surface, and an outer region located between the outer edge and the first opening in plan view. The second layer includes a plurality of second openings penetrating from the third surface to the fourth surface. The frame is connected to the outer edge and / or the outer region of the first layer. In a plan view, at least a portion of the frame extends to the outside of the outer edge of the first layer.

Description

[0001] This application is a divisional application of Chinese invention patent application filed on January 26, 2024, entitled "Framed Mask and Method for Manufacturing Organic Devices", with application number 202480008955.3. Technical Field

[0002] Embodiments of this disclosure relate to a method of manufacturing a framed mask and an organic device. Background Technology

[0003] Vapor deposition is a known method for forming precise patterns. In vapor deposition, firstly, a mask with openings is assembled with a substrate. Then, a vapor deposition material is deposited onto the substrate through the openings in the mask. Thus, a vapor-deposited layer containing the vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the mask openings. Vapor deposition is used, for example, as a method for forming pixels in an organic EL display device.

[0004] For example, JP2013-49889A discloses a method of using a mask device having a frame and a mask that engages with the frame under tension. The frame and the mask are made of an iron alloy containing nickel.

[0005] On the other hand, for example, JP2009-062565A proposed a mask made of silicon substrate in order to suppress mask deformation due to heat.

[0006] If the opening of a mask using a silicon substrate is formed near its outer edge, the outer edge is prone to damage, making mask processing difficult. On the other hand, it is required that by forming the opening near the outer edge of the mask, a vapor-deposited layer can be formed over a larger area of ​​the substrate using a single mask.

[0007] The purpose of this disclosure is to provide a mask that can effectively solve such problems. Summary of the Invention

[0008] One embodiment of the mask disclosed herein is a framed mask, which may include: a first layer comprising a first surface, a second surface opposite to the first surface, at least one first opening extending from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening when viewed from above; a second layer comprising a third surface opposite to the second surface, a fourth surface opposite to the third surface, and a plurality of second openings extending from the third surface to the fourth surface and overlapping the first opening when viewed from above; and a frame comprising a fifth surface facing the same side as the fourth surface, and a sixth surface opposite to the fifth surface, and connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer. The first layer may comprise silicon. When viewed from above, at least a portion of the frame may extend beyond the outer edge of the first layer. The frame may comprise glass or metal.

[0009] According to embodiments of this disclosure, mask breakage can be suppressed when processing masks containing silicon. Attached Figure Description

[0010] Figure 1 This is a top view showing an example of an organic device.

[0011] Figure 2 This is a diagram showing an example of a vapor deposition apparatus equipped with a framed mask.

[0012] Figure 3A This is a top view showing an example of a framed mask as viewed from the incident plane side.

[0013] Figure 3B This is a top view showing a modified example of a framed mask as viewed from the incident plane side.

[0014] Figure 3C This is a top view showing a modified example of a framed mask as viewed from the incident plane side.

[0015] Figure 4 This is a top view showing an example of a framed mask as viewed from the exit surface side.

[0016] Figure 5A yes Figure 3A A cross-sectional view of a framed mask along the VV line.

[0017] Figure 5B It is Figure 5A The diagram shows an enlarged representation of the section enclosed by the double-dotted line.

[0018] Figure 5C This is a cross-sectional view showing an example of the effective area.

[0019] Figure 6 It is Figure 5B The diagram shows an enlarged representation of the section enclosed by the double-dotted line.

[0020] Figure 7 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0021] Figure 8 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0022] Figure 9 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0023] Figure 10 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0024] Figure 11 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0025] Figure 12 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0026] Figure 13 This is a cross-sectional view illustrating an example of a method for manufacturing a framed mask according to one embodiment.

[0027] Figure 14A This is a cross-sectional view illustrating a modified example of the method for forming the second opening.

[0028] Figure 14B This is a cross-sectional view illustrating a modified example of the method for forming the second opening.

[0029] Figure 14C This is a cross-sectional view illustrating a modified example of the method for forming the second opening.

[0030] Figure 15 Is with Figure 6 The corresponding figure is a cross-sectional view showing a modified example of a framed mask.

[0031] Figure 16 Is with Figure 6 The corresponding figure is a cross-sectional view showing a modified example of a framed mask.

[0032] Figure 17 This is a diagram illustrating an example of a device equipped with organic components. Detailed Implementation

[0033] In this specification and accompanying drawings, unless otherwise specified, the terms “substrate,” “sheet,” “film,” etc., which refer to the material that forms the basis of a certain structure, are not distinguished from each other merely based on different names.

[0034] In this specification and accompanying drawings, unless otherwise specified, terms such as “parallel”, “orthogonal”, or values ​​of length and angle that define shape, geometric conditions, and their degree are not limited to their strict meaning, but are interpreted to include the range of degrees to which the same function can be expected.

[0035] In this specification and accompanying drawings, unless otherwise specified, the terms "above" or "below," "on the upper side" or "on the lower side," or "above" or "below" refer to situations where a component or region is in direct contact with other structures. This also includes situations where one structure is indirectly in contact with another structure, where another structure is involved between them. Furthermore, unless otherwise specified, the vertical direction in terms such as "above," "on the upper side," "above," "below," "below," or "below" can be reversed.

[0036] In this specification and accompanying drawings, unless otherwise specified, the state of "facing each other" between the faces of element A and element B includes not only the case where the faces of element A and element B are in contact, but also the case where element C is located between the faces of element A and element B. That is, the term "facing each other" is used to indicate the orientation of the two faces.

[0037] In this specification and accompanying drawings, unless otherwise specified, the same or similar symbols are used to denote the same part or parts with the same function, and sometimes repeated descriptions are omitted. Additionally, for ease of explanation, the dimensions in the drawings may differ from the actual scale, and sometimes a part of the structure may be omitted from the drawings.

[0038] In this specification and accompanying drawings, unless otherwise specified, one embodiment of this specification can be combined with other examples without contradiction. Furthermore, other examples can also be combined with each other without contradiction.

[0039] Unless otherwise specified in this specification and accompanying drawings, where more than two steps or processes are disclosed regarding manufacturing methods, other undisclosed steps or processes may be performed between the disclosed steps or processes. Furthermore, the order of the disclosed steps or processes is arbitrary as long as it does not create contradictions.

[0040] In one embodiment of this specification, an example of using a mask to form an organic layer or electrodes on a substrate during the manufacture of an organic EL display device will be described. However, the application of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment can also be used to form electrodes for devices used to display or project images or videos representing virtual reality (VR) or augmented reality (AR). Furthermore, the mask of this embodiment can also be used to form electrodes for display devices other than organic EL display devices, such as electrodes for liquid crystal display devices. Additionally, the mask of this embodiment can also be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0041] The first aspect of this disclosure is a framed mask comprising: a first layer including a first surface, a second surface opposite to the first surface, at least one first opening extending from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening when viewed from above; a second layer including a third surface opposite to the second surface, a fourth surface opposite to the third surface, and a plurality of second openings extending from the third surface to the fourth surface and overlapping the first opening when viewed from above; and a frame connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer.

[0042] The first layer contains silicon.

[0043] When viewed from above, at least a portion of the frame extends beyond the outer edge of the first layer.

[0044] The frame may contain glass or metal.

[0045] In the framed mask according to the first and second embodiments described above, the frame may include: a fifth surface facing the same side as the fourth surface; a sixth surface located on the opposite side of the fifth surface; and a third opening extending from the fifth surface through the sixth surface and overlapping the first opening when viewed from above.

[0046] In the framed mask according to the first, second, or third method described above, a stepped portion may be formed in the frame to accommodate the outer edge of the first layer.

[0047] In the framed mask of the fourth embodiment according to any one of the first to third embodiments described above, the framed mask may have a connecting layer between the frame and the first layer.

[0048] In the framed mask according to any of the first to fourth methods described above, the connecting layer may comprise a glass material, an inorganic material, a metallic material, or a resin material.

[0049] In the framed mask according to the fifth and sixth embodiments described above, the connecting layer may include spacers.

[0050] In the framed mask of the seventh method according to any one of the first to sixth methods described above, a spacer may be disposed between the frame and the first layer.

[0051] In the framed mask of the eighth method according to any one of the fourth to sixth methods described above, the connecting layer may be disposed only between the outer edge of the first layer and the frame.

[0052] In the framed mask of the ninth method according to any one of the first to eighth methods described above, an intermediate layer may be included between the first layer and the second layer.

[0053] The tenth aspect of this disclosure is a method for manufacturing an organic device, which includes a step of forming an organic layer on a substrate by vapor deposition using a framed mask of any one of the first to ninth aspects described above.

[0054] Reference Figures 1 to 13 An embodiment will now be described. First, an organic device 100 having an organic layer formed by using a mask will be described. Figure 1 This is a cross-sectional view showing an example of an organic device 100.

[0055] Organic device 100 includes a substrate 110 and a plurality of elements 115 arranged in an in-plane direction along the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. Elements 115 are located on the first surface 111. Elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0056] Component 115 may have a first electrode 120, an organic layer 130 on the first electrode 120, and a second electrode 140 on the organic layer 130.

[0057] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 when viewed from above. The insulating layer 160 may, for example, contain polyimide. The insulating layer 160 may overlap with the ends of the first electrodes 120. "View from above" refers to viewing the object along the normal direction of the surface of a plate-like component such as a substrate 110.

[0058] The substrate 110 can be an insulating component. Materials used for the substrate 110 include, for example, rigid materials without flexibility such as silicon, quartz glass, Pyrex glass, and synthetic quartz sheets, or flexible materials such as resin films, optical resin sheets, and thin glass. The substrate 110 can have the same planar shape as a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using apparatus for performing semiconductor manufacturing processes. For example, the first electrode 120, insulating layer 160, etc., can be formed on the substrate 110 using apparatus for performing semiconductor manufacturing processes.

[0059] Element 115 is configured to perform certain functions by applying a voltage between the first electrode 120 and the second electrode 140 or by flowing a current between the first electrode 120 and the second electrode 140. For example, if element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

[0060] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic material. The first electrode 120 may comprise a transparent and conductive metal oxide such as indium tin oxide.

[0061] Organic layer 130 contains organic materials. When an electric current is applied to organic layer 130, it can perform certain functions. Applying an electric current means applying a voltage to organic layer 130 or allowing current to flow through it. Organic layer 130 can be a light-emitting layer that emits light when an electric current is applied, or a layer that changes the transmittance or refractive index of light when an electric current is applied. Organic layer 130 may contain organic semiconductor materials.

[0062] like Figure 1 As shown, organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is contained within a first element 115A. The second organic layer 130B is contained within a second element 115B. Although not shown, organic layer 130 may also include a third organic layer contained within a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0063] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is activated. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from either the side of the second electrode 140 or the side of the first electrode 120.

[0064] The organic layer 130 may also include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.

[0065] The second electrode 140 may comprise a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. Figure 1 As shown, the second electrode 140 can also be extended across two adjacent organic layers 130 when viewed from above.

[0066] Next, the method for forming an organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 This is a diagram showing the vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process on an object to deposit vapor deposition material.

[0067] like Figure 2 As shown, the vapor deposition apparatus 10 may include a vapor deposition source 6, a heater 8, and a framed mask 15 inside. The vapor deposition apparatus 10 may also include an exhaust unit for creating a vacuum atmosphere inside the apparatus. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains vapor deposition materials 7, such as organic or metallic materials. The heater 8 heats the vapor deposition source 6, causing the vapor deposition material 7 to evaporate under a vacuum atmosphere.

[0068] The framed mask 15 includes a mask 20 and a frame 60 mounted on the mask 20. The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The exit surface 202 is located on the opposite side of the incident surface 201. The framed mask 15 is supported by a mask holder 9. The framed mask 15 is configured such that the incident surface 201 faces the vapor deposition source 6, and the exit surface 202 faces the first surface 111 of the substrate 110. A portion of the vapor deposition material 7 entering the mask 20 from the exit surface 202 exits from the exit surface 202 through the second opening 41. The vapor deposition material 7 exiting from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may also contact the first surface 111 of the substrate 110.

[0069] like Figure 2As shown, the vapor deposition apparatus 10 may also include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 contains a metallic material, the magnet 5 can attract the mask 20 to the substrate 110 using magnetic force. This reduces or eliminates the gap between the mask 20 and the substrate 110. Consequently, it suppresses the generation of shadows during the vapor deposition process. In this application, shadow refers to the phenomenon where the thickness of the organic layer 130 formed near the wall of the second opening 41 is less than the thickness of the organic layer 130 formed at the center of the second opening 41. Shadows are caused by the vapor deposition material 7 adhering to the wall of the mask 20, or by the vapor deposition material 7 entering the gap between the mask 20 and the substrate 110.

[0070] Next, the framed mask 15 will be described in detail. Figure 3A This is a top view showing an example of a framed mask 15 as viewed from the incident surface 201 side. Figure 4 This is a top view showing an example of a framed mask 15 as viewed from the exit surface 202 side. Figure 5A yes Figure 3A A cross-sectional view of the framed mask 15 along the VV line. Figure 5B It is Figure 5A The diagram shows an enlarged representation of the cross-section enclosed by a double-dotted line.

[0071] First, mask 20 will be described in detail. For example... Figure 5A As shown, the mask 20 includes a first layer 30 and a second layer 40 arranged sequentially from the incident surface 201 towards the exit surface 202. The first layer 30 contains silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The second layer 40 contains, for example, a metallic material. Figure 5A As shown, the mask 20 may also include an intermediate layer 50. The intermediate layer 50 is disposed between the first layer 30 and the second layer 40. The layers will be described below.

[0072] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 can form an incident surface 201. The second surface 302 is located on the opposite side of the first surface 301.

[0073] The first opening 31 extends from the first surface 301 to the second surface 302 of the first layer 30. (Example) Figure 3A As shown, the first layer 30 may contain multiple first openings 31. The multiple first openings 31 may be arranged in the first direction D1 and the second direction D2. The second direction D2 may be orthogonal to the first direction D1.

[0074] The first opening 31 can correspond to one screen of an organic EL display device. Figure 3A The mask 20 shown is capable of simultaneously forming patterns of organic layers corresponding to multiple images on the substrate 110. For example... Figure 3A As shown, the first opening 31 can have a rectangular outline when viewed from above.

[0075] Figure 3B and Figure 3C These are top views showing another example of mask 20. (Example) Figure 3B As shown, the corners of the outline of the first opening 31 may contain curves. (As...) Figure 3C As shown, the outline of the first opening 31 can be octagonal. According to... Figure 3B and Figure 3C In the example shown, when stress is applied to the contour of the first opening 31, stress concentration at the corners can be suppressed. Therefore, damage to the first layer 30 can be suppressed.

[0076] The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. Figure 3A In the example shown, the first wall 32 extends along the normal direction of the first surface 301.

[0077] like Figure 3A As shown, the area of ​​the first layer 30 without the first opening 31 can be divided into an outer region 35 and an inner region 36. The inner region 36 is the area located between two adjacent first openings 31 when viewed from above. The outer region 35 is the area located between the outer edge 303 of the first layer 30 and the first opening 31 when viewed from above. Figure 3A As shown, the inner region 36 can extend along the first direction D1 and the second direction D2.

[0078] like Figure 3A and Figure 4 As shown, the first layer 30 may include alignment marks 39. Alignment marks 39 are formed, for example, on the second surface 302. Alignment marks 39 may also be formed on the first surface 301. Alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. When the substrate 110 has the property of allowing visible light to pass through, the alignment marks 39 can be identified through the substrate 110.

[0079] like Figure 3A and Figure 4 As shown, alignment mark 39 can have a circular outline when viewed from above. Although not shown, alignment mark 39 can also have an outline other than a circle, such as a rectangle or a cross. Alignment mark 39 can be located in the outer region 35 or the inner region 36. Alignment mark 39 can be formed in a layer other than the first layer 30.

[0080] As described above, the first layer 30 comprises silicon or a silicon compound. The first layer 30 is fabricated, for example, by processing a silicon wafer. Figure 3AAs shown, the outer edge 303 of the first layer 30 may include a straight section. This straight section is also called an orientation plane. Although not shown, a notch may also be formed on the outer edge 303. This notch is also called a notch. The orientation plane and the notch represent the crystal orientation of the silicon wafer.

[0081] When viewed from above, the maximum dimension S1 of the first layer 30 can be, for example, 100mm or more, 150mm or more, or 200mm or more. Dimension S1 can also be, for example, less than 300mm, less than 400mm, or less than 500mm. The range of dimension S1 can also be determined by a first group consisting of 100mm, 150mm, and 200mm and / or a second group consisting of 300mm, 400mm, and 500mm. The range of dimension S1 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of dimension S1 can also be determined by a combination of any two of the values ​​contained in the first group. The range of dimension S1 can also be determined by a combination of any two of the values ​​contained in the second group. Size S1 can be, for example, 100mm or more and 500mm or less, 100mm or more and 400mm or less, 100mm or more and 300mm or less, 100mm or more and 200mm or less, 100mm or more and 150mm or less, 150mm or more and 500mm or less, 150mm or more and 400mm or less, 150mm or more and 300mm or less, 150mm or more and 200mm or less, 200mm or more and 500mm or less, 200mm or more and 400mm or less, 200mm or more and 300mm or less, 300mm or more and 500mm or less, 300mm or more and 400mm or less, 400mm or more and 500mm or less.

[0082] The size S2 of the first opening 31 in the direction of the first opening 31 arrangement can be, for example, 3mm or more, 10mm or more, or 20mm or more. The size S2 can be, for example, less than 30mm, less than 50mm, or less than 100mm. The range of size S2 can also be determined by a first group consisting of 3mm, 10mm, and 20mm and / or a second group consisting of 30mm, 50mm, and 100mm. The range of size S2 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of size S2 can also be determined by a combination of any two of the values ​​included in the first group. The range of size S2 can also be determined by a combination of any two of the values ​​included in the second group. Size S2 can be, for example, 3mm or more and less than 100mm, 3mm or more and less than 50mm, 3mm or more and less than 30mm, 3mm or more and less than 20mm, 3mm or more and less than 10mm, 10mm or more and less than 100mm, 10mm or more and less than 50mm, 10mm or more and less than 30mm, 10mm or more and less than 20mm, 20mm or more and less than 100mm, 20mm or more and less than 50mm, 20mm or more and less than 30mm, 30mm or more and less than 100mm, 30mm or more and less than 50mm, and 50mm or more and less than 100mm.

[0083] The interval S3 between two first openings 31 in the direction of their arrangement can be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The interval S3 can be, for example, less than 10 mm, less than 15 mm, or less than 20 mm. The range of the interval S3 can also be determined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm and / or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the interval S3 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of the interval S3 can also be determined by a combination of any two of the values ​​contained in the first group. The range of the interval S3 can also be determined by a combination of any two of the values ​​contained in the second group. The interval S3 can be, for example, 0.1mm or more and 20mm or less, 0.1mm or more and 15mm or less, 0.1mm or more and 10mm or less, 0.1mm or more and 1.0mm or less, 0.1mm or more and 0.5mm or less, 0.5mm or more and 20mm or less, 0.5mm or more and 15mm or less, 0.5mm or more and 10mm or less, 0.5mm or more and 1.0mm or less, 1.0mm or more and 20mm or less, 1.0mm or more and 15mm or less, 1.0mm or more and 10mm or less, 10mm or more and 20mm or less, 10mm or more and 15mm or more, and 15mm or more and 20mm or less.

[0084] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. Thickness T1 can be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. Thickness T1 can also be, for example, less than 600 μm, less than 800 μm, or less than 1000 μm. The range of thickness T1 can be determined by a first group consisting of 50 μm, 100 μm, and 200 μm and / or a second group consisting of 600 μm, 800 μm, and 1000 μm. The range of thickness T1 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of thickness T1 can also be determined by a combination of any two of the values ​​contained in the first group. The range of thickness T1 can also be determined by a combination of any two of the values ​​contained in the second group. Thickness T1 can be, for example, 50μm or more and 1000μm or less, 50μm or more and 800μm or less, 50μm or more and 600μm or less, 50μm or more and 200μm or less, 50μm or more and 100μm or less, 100μm or more and 1000μm or less, 100μm or more and 800μm or less, 100μm or more and 600μm or less, 100μm or more and 200μm or less, 200μm or more and 1000μm or less, 200μm or more and 800μm or less, 200μm or more and 600μm or less, 600μm or more and 1000μm or less, 600μm or more and 800μm or more, 800μm or more and 1000μm or less.

[0085] Next, the second layer 40 will be described. The second layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 is opposite to the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401.

[0086] The second opening 41 extends from the third surface 401 to the fourth surface 402 of the second layer 40. One second opening 41 corresponds to one organic layer 130. A group of regularly arranged second openings 41 corresponds to one screen of an organic EL display device. Figure 3A and Figure 4 As shown, a group of multiple second openings 41 arranged in a regular pattern can overlap with a first opening 31 when viewed from above. The multiple groups of second openings 41 are supported by a first layer 30 formed by processing a single component such as a silicon wafer.

[0087] The second layer 40 can be divided into a peripheral region 43 and an effective region 44. The peripheral region 43 is the area that overlaps with the first layer 30 when viewed from above. The effective region 44 is a group of regularly arranged second openings 41.

[0088] Figure 5C This is a cross-sectional view showing an example of the effective area 44. The second layer 40 includes a second wall 42 facing the second opening 41. Figure 5C As shown, the second wall surface 42 may include a conical surface 42a that extends away from the center of the second opening 41 as it moves toward the third surface 401. By including the conical surface 42a in the second wall surface 42, it is possible to suppress the generation of shadows in the vicinity of the second wall surface 42.

[0089] exist Figure 5C In this text, the symbol S8 represents the width of the conical surface 42a in the direction in which the second opening 41 is arranged. The width S8 can be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The width S8 can be, for example, less than 10 μm, less than 20 μm, or less than 25 μm. The range of the width S8 can be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm and / or a second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width S8 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of the width S8 can also be determined by a combination of any two of the values ​​contained in the first group. The range of the width S8 can also be determined by a combination of any two of the values ​​contained in the second group. The width S8 can be, for example, 0.1μm or more and 25μm or less, 0.1μm or more and 20μm or less, 0.1μm or more and 10μm or less, 0.1μm or more and 1.0μm or less, 0.1μm or more and 0.5μm or less, 0.5μm or more and 25μm or less, 0.5μm or more and 20μm or less, 0.5μm or more and 10μm or less, 0.5μm or more and 1.0μm or less, 1.0μm or more and 25μm or less, 1.0μm or more and 20μm or less, 1.0μm or more and 10μm or less, 10μm or more and 25μm or less, 10μm or more and 20μm or less, 20μm or more and 25μm or less.

[0090] exist Figure 5CIn this context, the symbol θ1 represents the angle between the second wall surface 42 and the fourth wall surface 402. Angle θ1 can be, for example, greater than 50°, greater than 55°, or greater than 60°. Angle θ1 can also be less than 80°, less than 85°, or less than 90°. The range of angle θ1 can also be determined by a first group consisting of 50°, 55°, and 60° and / or a second group consisting of 80°, 85°, and 90°. The range of angle θ1 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of angle θ1 can also be determined by a combination of any two values ​​contained in the first group. The range of angle θ1 can also be determined by a combination of any two values ​​contained in the second group. Angle θ1 can be, for example, greater than 50° and less than 90°, greater than 50° and less than 85°, greater than 50° and less than 80°, greater than 50° and less than 60°, greater than 50° and less than 55°, greater than 55° and less than 90°, greater than 55° and less than 85°, greater than 55° and less than 80°, greater than 55° and less than 60°, greater than 60° and less than 90°, greater than 60° and less than 85°, greater than 60° and less than 80°, greater than 80° and less than 90°, greater than 80° and less than 85°, greater than 85° and less than 90°.

[0091] The second layer 40 may contain a metallic material. When the second layer 40 contains a metallic material, the mask 20 can be tightly adhered to the substrate 110 by using the magnet 5. In this case, the mask 20 can be attracted to the magnet 5 by magnetic force, improving the adhesion between the mask 20 and the substrate 110. Therefore, the fineness of the organic layers 130A, 130B, and 130C of the organic device 100 can be improved.

[0092] The metallic material included in the second layer 40 can also be a magnetic metallic material. For example, a nickel-containing iron alloy can be used as a material constituting the second layer 40. In addition to nickel, the iron alloy can also contain cobalt. For example, an iron alloy with a combined nickel and cobalt content of 30% to 54% by mass and a cobalt content of 0% to 6% by mass can be used as a material for the second layer 40. The nickel-containing iron alloy can be an Invar alloy containing 34% to 38% by mass of nickel, or a low-thermal-expansion Fe-Ni plating alloy containing 38% to 54% by mass of nickel. Among the nickel- and cobalt-containing iron alloys, a super-Invar alloy containing cobalt in addition to 30% to 34% by mass of nickel can be used. By using such an iron alloy, the coefficient of thermal expansion of the second layer 40 can be reduced. For example, when using a glass substrate as the substrate 110, the coefficient of thermal expansion of the second layer 40 can be adjusted to a value equal to or close to that of the glass substrate. This helps to suppress the reduction in precision.

[0093] As a material constituting the second layer 40, nickel can be used instead of the aforementioned nickel-containing iron alloy, or a nickel alloy containing cobalt can be used. When using a cobalt-containing nickel alloy, a nickel alloy with a cobalt content of 8% by mass or more and 10% by mass or less can be used as the material for the second layer 40. Using such nickel or nickel alloys can suppress component decomposition of the plating solution used in the second layer formation process described later, thereby improving the stability of the plating solution.

[0094] The second layer 40 may consist of a single metal layer or may contain multiple metal layers. In the case where the mask 20 includes an intermediate layer 50, the second metal layer 40 is made of a material resistant to the etchant used to etch the intermediate layer 50.

[0095] The thickness of the second layer 40 is less than the thickness T1 of the first layer 30. The thickness of the second layer 40 can be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. The thickness of the second layer 40 can be, for example, less than 5 μm, less than 10 μm, or less than 25 μm. The range of the thickness of the second layer 40 can be determined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the thickness of the second layer 40 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the second layer 40 can also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness of the second layer 40 can also be determined by a combination of any two of the values ​​included in the second group. The thickness of the second layer 40 can be, for example, 0.5 μm or more and 25 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 5 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 25 μm or less, 1.0 μm or more and 10 μm or less, 1.0 μm or more and 5 μm or less, 1.0 μm or more and 2.0 μm or less, 2.0 μm or more and 25 μm or less, 2.0 μm or more and 10 μm or less, 2.0 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or more and 25 μm or less. By making the thickness of the second layer 40 25 μm or less, the generation of shadows can be suppressed. By making the thickness of the second layer 40 greater than 0.5 μm, defects such as pinholes and deformations can be suppressed in the second layer 40.

[0096] When viewed from above, the size S4 of the second opening 41 can be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The size S4 can also be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of size S4 can be determined by a first group consisting of 1 μm, 2 μm, and 3 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of size S4 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of size S4 can also be determined by a combination of any two of the values ​​contained in the first group. The range of size S4 can also be determined by a combination of any two of the values ​​contained in the second group. Size S4 can be, for example, 1μm or larger and 25μm or smaller, 1μm or larger and 10μm or smaller, 1μm or larger and 5μm or smaller, 1μm or larger and 3μm or smaller, 1μm or larger and 2μm or smaller, 2μm or larger and 25μm or smaller, 2μm or larger and 10μm or smaller, 2μm or larger and 5μm or smaller, 2μm or larger and 3μm or smaller, 3μm or larger and 25μm or smaller, 3μm or larger and 10μm or smaller, 3μm or larger and 5μm or smaller, 5μm or larger and 25μm or smaller, 5μm or larger and 10μm or larger, 10μm or larger and 25μm or smaller.

[0097] The interval S5 between two second openings 41 in the direction of their arrangement can be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The interval S5 can be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the interval S5 can be determined by a first group consisting of 1 μm, 2 μm, and 3 μm and / or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the interval S5 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of the interval S5 can also be determined by a combination of any two of the values ​​contained in the first group. The range of the interval S5 can also be determined by a combination of any two of the values ​​contained in the second group. The interval S5 can be, for example, greater than or equal to 1 μm and less than 25 μm, greater than or equal to 1 μm and less than 10 μm, greater than or equal to 1 μm and less than 5 μm, greater than or equal to 1 μm and less than 3 μm, greater than or equal to 1 μm and less than 2 μm, greater than or equal to 2 μm and less than 25 μm, greater than or equal to 2 μm and less than 10 μm, greater than or equal to 2 μm and less than 5 μm, greater than or equal to 2 μm and less than 3 μm, greater than or equal to 3 μm and less than 25 μm, greater than or equal to 3 μm and less than 10 μm, greater than or equal to 3 μm and less than 5 μm, greater than or equal to 5 μm and less than 25 μm, greater than or equal to 5 μm and less than 10 μm, and greater than or equal to 10 μm and less than 25 μm.

[0098] When viewed from above, the distance S6 between the first wall surface 32 and the second opening 41 can be greater than the distance S5. This allows for the suppression of shadows cast near the second opening 41 close to the first wall surface 32.

[0099] The second layer 40 may include alignment marks. The alignment marks of the second layer 40 may be formed separately from the alignment marks 39 of the first layer 30, or they may be formed in place of the alignment marks 39 of the first layer 30.

[0100] Next, intermediate layer 50 will be described. Intermediate layer 50 contains layers that perform certain functions for either the first layer 30 or the second layer 40. For example, intermediate layer 50 contains a first intermediate layer 51. Figure 5B In the example shown, the first intermediate layer 51 is located between the first layer 30 and the second layer 40.

[0101] The first intermediate layer 51 can function as a termination layer to stop the etching process when the first layer 30 is etched. Specifically, the first intermediate layer 51 is resistant to the etchant used to etch the first layer 30. The first intermediate layer 51 may contain aluminum, aluminum alloy, titanium, or titanium alloy. The first intermediate layer 51 may also contain inorganic compounds such as silicon oxide.

[0102] When the first intermediate layer 51 is a termination layer, the thickness of the first intermediate layer 51 is not particularly limited as long as it can suppress the etching of the second layer 40 during the processing of the first layer 30. For example, the thickness of the first intermediate layer 51 can be less than or greater than the thickness of the second layer 40. The thickness of the first intermediate layer 51 can be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the first intermediate layer 51 can be, for example, less than 1 μm, less than 10 μm, or less than 100 μm. The range of the thickness of the first intermediate layer 51 can be determined by a first group consisting of 5 nm, 50 nm, and 75 nm and / or a second group consisting of 1 μm, 10 μm, and 100 μm. The range of the thickness of the first intermediate layer 51 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the first intermediate layer 51 can also be determined by a combination of any two of the values ​​included in the first group. The thickness of the first intermediate layer 51 can also be determined by a combination of any two of the values ​​included in the second group above. For example, the thickness of the first intermediate layer 51 can be 5 nm or more and 100 μm or less, 5 nm or more and 1 μm or less, 5 nm or more and 75 nm or less, 5 nm or more and 50 nm or less, 50 nm or more and 100 μm or less, 50 nm or more and 10 μm or less, 50 nm or more and 1 μm or less, 50 nm or more and 75 nm or less, 75 nm or more and 100 μm or less, 75 nm or more and 10 μm or less, 75 nm or more and 1 μm or less, 1 μm or more and 100 μm or more, and 10 μm or more and 100 μm or less. The higher the resistance of the first intermediate layer 51 to the etchant used in the first layer 30, the greater the reduction in the thickness of the first intermediate layer 51. The thickness of the first intermediate layer 51 is particularly preferably less than 1 μm.

[0103] Intermediate layer 50 may include a layer that functions to bond the first layer 30 to the second layer 40. For example, the first intermediate layer 51 may also be a bonding layer containing an adhesive. The thickness of the bonding layer may be, for example, 0.1 μm or more, 0.2 μm or more, or 0.5 μm or more. The thickness of the bonding layer may be, for example, less than 1 μm, less than 2 μm, or less than 3 μm. The range of the thickness of the bonding layer can be determined by a first group consisting of 0.1 μm, 0.2 μm, and 0.5 μm and / or a second group consisting of 1 μm, 2 μm, and 3 μm. The range of the thickness of the bonding layer may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness of the bonding layer may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness of the bonding layer may also be determined by a combination of any two of the values ​​included in the second group. The thickness of the bonding layer can be, for example, 0.1 μm or more and 3 μm or less, 0.1 μm or more and 2 μm or less, 0.1 μm or more and 1 μm or less, 0.1 μm or more and 0.5 μm or less, 0.1 μm or more and 0.2 μm or less, 0.2 μm or more and 3 μm or less, 0.2 μm or more and 2 μm or less, 0.2 μm or more and 1 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 3 μm or less, 0.5 μm or more and 2 μm or less, 0.5 μm or more and 1 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, or 2 μm or more and 3 μm or less.

[0104] Preferably, the intermediate layer 50 is located in a position that does not overlap with the second opening 41 when viewed from above. This suppresses shadows caused by the intermediate layer 50.

[0105] The first intermediate layer 51 may include alignment marks. The alignment marks of the first intermediate layer 51 may be formed separately from the alignment marks of the first layer 30 or the second layer 40, or they may be formed in place of the alignment marks of the first layer 30 or the second layer 40.

[0106] Next, the frame 60 will be described in detail. The frame 60 is mounted on the mask 20 for the purpose of holding it during processing, for example, when moving the mask 20. Figure 3AAs shown, a second opening 41 is formed on the mask 20 up to near its outer edge, and a first opening 31 is formed thereup to near its outer edge as well. When handling the mask 20, for example when moving the mask 20, it is desirable to hold a region outside the area where the second opening 41 is formed to prevent deformation of the second opening 41 of the second layer 40. However, since the first opening 31 is formed near the outer edge 303 of the first layer 30, the width of the outer region 35 is insufficient to hold the mask 20. In addition, since the first opening 31 is formed near the outer edge 303 of the first layer 30, the outer region 35 is relatively narrow. When the first layer 30 contains silicon, the narrow outer region 35 is particularly prone to breakage. By mounting a frame 60 on such a mask 20, the frame 60 can be held when handling the mask 20, and the possibility of breakage of the first layer 30 is also reduced. As a result, the handling of the mask 20 becomes easier.

[0107] from Figures 3A to 5B It is understood that the frame 60 includes a fifth surface 601 and a sixth surface 602. The fifth surface 601 faces the same side as the fourth surface 402. The sixth surface 602 is located on the opposite side of the fifth surface 601. In the illustrated example, the fifth surface 601 is opposite to the first surface 301. It should be noted that when the mask 15 with the frame is supported by the mask holder 9 of the vapor deposition apparatus 10, the frame 60 is parallel to the second layer 40 so that the second layer 40 is horizontal.

[0108] like Figure 5A and Figure 5B As shown, the frame 60 is connected to the first surface 301 of the outer region 35. In the illustrated example, a connecting layer 70 is disposed between the first surface 301 of the outer region 35 and the fifth surface 601 of the frame 60. The frame 60 is connected to the first layer 30 via the connecting layer 70. When viewed from above, the frame 60 does not overlap with the first opening 31. Furthermore, when viewed from above, at least a portion of the frame 60 extends to the outside of the outer edge 303 of the first layer 30. Thus, the area used for holding the mask 20 is extended by the frame 60.

[0109] Frame 60 may be made of glass or metal. Glass materials may include quartz glass, borosilicate glass, alkali-free glass, or soda glass. Metal materials may include Invar alloy or stainless steel such as SUS430 or SUS304. By incorporating these materials, frame 60 can achieve higher rigidity than the first layer 30. The material of frame 60 is determined by considering the gripping forces of the operator or robot arm operating the framed mask 15, ensuring that frame 60 possesses the necessary rigidity.

[0110] Furthermore, the linear thermal expansion coefficient of the frame 60 is preferably the same as that of the first layer 30. This ensures that the elongation of both the frame 60 and the first layer 30 is similar when the framed mask 15 is heated. Consequently, the possibility of breakage of the first layer 30 is suppressed. Specifically, the absolute value of the difference between the linear thermal expansion coefficients of the frame 60 and the first layer 30 is 15 ppm / ℃ or less, and can be 10 ppm / ℃ or less, or 5.0 ppm / ℃ or less.

[0111] In the illustrated example, the frame 60 is formed in a ring shape. The frame 60 has a region that extends circumferentially outside the outer edge 303 of the first layer 30 when viewed from above. This effectively suppresses the possibility of damage to the outer region 35 of the first layer 30 when processing the mask 20. More specifically, a third opening 61 is formed in the center of the frame 60, extending from the fifth surface 601 to the sixth surface 602. In the illustrated example, the third opening 61 has a shape similar to the outer edge 303 of the first layer 30. The maximum dimension S9 of the third opening 61 is smaller than the maximum dimension S1 of the outer edge 303 of the first layer 30. When viewed from above, the third opening 61 overlaps with the first opening 31. In the illustrated example, when viewed from above, the third opening 61 also overlaps with the inner region 36 of the first layer 30. In other words, when viewed from above, the third opening 61 overlaps with all of the first openings 31.

[0112] The shape and size of the outer edge 603 of the frame 60 are not particularly limited. The shape and size S10 of the outer edge 603 of the frame 60 can be determined based on the size or shape of the operator's hand or robot arm handling the framed mask 15, and the size or shape of the mask holder 9 of the vapor deposition apparatus 10. The outer edge 603 of the frame 60 can be a quadrilateral or other polygons. The size S10 of the outer edge 603 of the frame 60 can be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The size S10 can be, for example, less than 300 mm, less than 400 mm, or less than 500 mm. The range of size S10 can also be determined by a first group consisting of 100 mm, 150 mm, and 200 mm and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of size S10 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension S10 can also be determined by any combination of two values ​​included in the first group above. The range of dimension S10 can also be determined by any combination of two values ​​included in the second group above. For example, dimension S10 can be 100mm or more and 500mm or less, 100mm or more and 400mm or less, 100mm or more and 300mm or less, 100mm or more and 200mm or less, 100mm or more and 150mm or less, 150mm or more and 500mm or less, 150mm or more and 400mm or less, 150mm or more and 300mm or less, 150mm or more and 200mm or less, 200mm or more and 500mm or less, 200mm or more and 400mm or less, 200mm or more and 300mm or less, 300mm or more and 500mm or less, 300mm or more and 400mm or less, and 400mm or more and 500mm or less.

[0113] The distance S11 between the outer edge 603 of the frame 60 and the outer edge 303 of the first layer 30 can also be determined based on the size or shape of the operator's hand or robot arm handling the framed mask 15, and the size or shape of the mask holder 9 of the vapor deposition apparatus 10. The distance S11 can be, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The distance S11 can be, for example, less than 30 mm, less than 60 mm, or less than 100 mm. The range of the distance S11 can be determined by a first group consisting of 5 mm, 10 mm, and 15 mm and / or a second group consisting of 30 mm, 60 mm, and 100 mm. The range of the distance S11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance S11 can also be determined by a combination of any two of the values ​​included in the first group. The range of the distance S11 can also be determined by a combination of any two of the values ​​included in the second group. The distance S11 can be, for example, 5mm or more and less than 100mm, 5mm or more and less than 60mm, 5mm or more and less than 30mm, 5mm or more and less than 15mm, 5mm or more and less than 10mm, 10mm or more and less than 100mm, 10mm or more and less than 60mm, 10mm or more and less than 30mm, 10mm or more and less than 15mm, 15mm or more and less than 100mm, 15mm or more and less than 60mm, 15mm or more and less than 30mm, 30mm or more and less than 100mm, 30mm or more and less than 60mm, or 60mm or more and less than 100mm.

[0114] The thickness T2 of the frame 60 is not particularly limited. Thickness T2 can also be determined based on the size or shape of the operator's hand or robotic arm handling the framed mask 15, or the size or shape of the mask holder 9 of the vapor deposition apparatus 10. Thickness T2 can, for example, be 500 μm or more, 2 mm or more, or 5 mm or more. Thickness T2 can, for example, be less than 10 mm, less than 20 mm, or less than 30 mm. The range of thickness T2 can be determined by a first group consisting of 500 μm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 30 mm. The range of thickness T2 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness T2 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness T2 can also be determined by a combination of any two of the values ​​included in the second group. Thickness T2 can be, for example, 500μm or more and 30mm or less, 500μm or more and 20mm or less, 500μm or more and 10mm or less, 500μm or more and 5mm or less, 500μm or more and 2mm or less, 2mm or more and 30mm or less, 2mm or more and 20mm or less, 2mm or more and 10mm or less, 2mm or more and 5mm or less, 5mm or more and 30mm or less, 5mm or more and 20mm or less, 5mm or more and 10mm or less, 10mm or more and 30mm or less, 10mm or more and 20mm or less, 20mm or more and 30mm or less.

[0115] By determining the shape and size of the outer edge 603 of the frame 60 and the thickness T2 of the frame 60 based on the size and shape of the robot handling the framed mask 15 and the mask holder 9 of the vapor deposition apparatus 10, the shape and size of the framed mask 15 can be adapted to the shape and size of existing robots or existing vapor deposition apparatus 10. In other words, it is not necessary to adapt the shape and size of the mask 20 to the shape and size of existing robots or existing vapor deposition apparatus 10, thus increasing the design freedom of the mask 20.

[0116] In the illustrated example, the fifth surface 601 of the frame 60 is located closer to the first surface 301 of the first layer 30 than the fourth surface 402 of the second layer 40. In other words, the second layer 40 protrudes from the fifth surface 601 of the frame 60. Therefore, when a vapor-deposited layer is formed on the substrate 110 or the constituent elements on the substrate 110 using the mask 20, the second layer 40 can be made to contact the substrate 110 or the constituent elements on the substrate 110.

[0117] The frame 60 may also include alignment marks. This makes it easier to position the mask 20 relative to the frame 60 when mounting the frame 60 onto the mask 20. Furthermore, the alignment marks formed on the frame 60 can also be used to adjust the relative position of the substrate 110 to the mask 20. For example, even if the alignment mark 39 is formed on the first layer 30, if the second layer 40 is formed to the outer edge 303 of the first layer 30, the alignment mark 39 is covered by the second layer 40, making it difficult to adjust the position of the substrate 110 relative to the mask 20 while observing the alignment mark 39. In this case, by forming an alignment mark mask on the frame 60, the position of the substrate 110 relative to the framed mask 15 can be adjusted, thereby adjusting the position of the substrate 110 relative to the mask 20.

[0118] exist Figure 5A as well as Figure 5B In the example shown, frame 60 is connected to layer 30 via connecting layer 70. Additionally, in Figure 6 In the example shown, a spacer 75 is provided between frame 60 and the first layer 30. Figure 6 It is Figure 5B A magnified view of the cross-section, enclosed by a double-dotted line. Figure 6 In the example shown, the connecting layer 70 and the spacer 75 are disposed between the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30.

[0119] The connecting layer 70 fixes the frame 60 to the first layer 30 by bonding, adhesive, or welding. The connecting layer 70 may contain glass, inorganic, metallic, or resin materials. The connecting layer 70 may be formed from glass frit, glass paste, solder paste, conductive paste, epoxy resin, polyimide, acrylic resin, etc. In order to suppress the venting generated from the connecting layer 70 during the vapor deposition process in the vapor deposition apparatus 10, for example, the high heat-resistant epoxy adhesive "AREMCOBOND526N" manufactured by Aremco Products, or the UV-curable adhesive "WORLDROCK (registered trademark) 5910 (product number)" or "WORLDROCK (registered trademark) 8723K9B (product number)" manufactured by Kyoritsu Chemical Industry Co., Ltd. can be used as the material for forming the connecting layer 70. Furthermore, by using a material with high solvent resistance as the material forming the bonding layer 70, the possibility of deformation of the bonding layer 70 in contact with the cleaning solution, which could cause the frame 60 to separate from the mask 20, can be suppressed when the vapor-deposited material is removed by cleaning the framed mask 15 used in the vapor deposition process. In this case, for example, the UV-curable adhesive "ThreeBond (registered trademark) 3026E (product name)" manufactured by ThreeBond Corporation can be used as the material forming the bonding layer 70. In addition, by using a material that can be peeled off from the frame 60 and the mask 20 as the bonding layer 70, the frame 60 and the mask 20 can be reused. In this case, the materials used to form the bonding layer 70 can be, for example, the double-sided peel-off adhesive "BBX100" manufactured by Cemedine Co., Ltd., the visible light curing adhesive "Clearpresto CP4374" or "Clearpresto K40" manufactured by Sekisui Fuller Co., Ltd., or the cyanoacrylate instant adhesive "Skylock R-4" manufactured by Nippon Ka Seiko Co., Ltd.

[0120] The thickness of the connecting layer 70 can be, for example, 0.05 μm or more, 5 μm or more, or 10 μm or more. The thickness of the connecting layer 70 can be, for example, less than 20 μm, less than 50 μm, or less than 100 μm. The thickness range of the connecting layer 70 can be determined by a first group consisting of 0.05 μm, 5 μm, and 10 μm and / or a second group consisting of 20 μm, 50 μm, and 100 μm. The thickness range of the connecting layer 70 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The thickness range of the connecting layer 70 can also be determined by a combination of any two of the values ​​included in the first group. The thickness range of the connecting layer 70 can also be determined by a combination of any two of the values ​​included in the second group. The thickness of the connecting layer 70 can be, for example, 0.05μm or more and 100μm or less, 0.05μm or more and 50μm or less, 0.05μm or more and 20μm or less, 0.05μm or more and 10μm or less, 0.05μm or more and 5μm or less, 5μm or more and 100μm or less, 5μm or more and 50μm or less, 5μm or more and 20μm or less, 5μm or more and 10μm or less, 10μm or more and 100μm or less, 10μm or more and 50μm or less, 10μm or more and 20μm or less, 20μm or more and 100μm or less, 20μm or more and 50μm or less.

[0121] To ensure uniform spacing between the frame 60 and the first layer 30, a spacer 75 is disposed between the frame 60 and the first layer 30. Specifically, when the connecting layer 70 and the spacer 75 are disposed between the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30, the thickness of the connecting layer 70 can be made uniformly corresponding to the dimensions of the spacer 75 simply by pressing the frame 60 against the first layer 30. By ensuring uniform spacing between the frame 60 and the first layer 30, the frame 60 can be easily made parallel to the second layer 40.

[0122] The spacer 75 is, for example, a spherical bead. The diameter of the spacer 75 can be, for example, 1 μm or more, 5 μm or more, or 10 μm or more. The diameter of the spacer 75 can be, for example, less than 20 μm, less than 50 μm, or less than 100 μm. The range of the diameter of the spacer 75 can be determined by a first group consisting of 1 μm, 5 μm, and 10 μm and / or a second group consisting of 20 μm, 50 μm, and 100 μm. The range of the diameter of the spacer 75 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the diameter of the spacer 75 can also be determined by a combination of any two of the values ​​included in the first group. The range of the diameter of the spacer 75 can also be determined by a combination of any two of the values ​​included in the second group. The diameter of the spacer 75 can be, for example, 1μm or more and 100μm or less, 1μm or more and 50μm or less, 1μm or more and 20μm or less, 1μm or more and 10μm or less, 1μm or more and 5μm or less, 5μm or more and 100μm or less, 5μm or more and 50μm or less, 5μm or more and 20μm or less, 5μm or more and 10μm or less, 10μm or more and 100μm or less, 10μm or more and 50μm or less, 10μm or more and 20μm or less, 20μm or more and 100μm or less, 20μm or more and 50μm or less.

[0123] The material forming the spacer 75 is not particularly limited. The spacer 75 may contain resins such as glass, acrylic, polyurethane, polystyrene, and polytetrafluoroethylene (PTFE).

[0124] The spacer 75 may be included in the connecting layer 70. In other words, the connecting layer 70 may be formed of a material containing the spacer 75. Thus, the spacer 75 can be disposed at the same time as the connecting layer 70 is formed.

[0125] The thickness of each layer, the size of each component, the spacing, etc., can be determined by observing the cross-sectional image of mask 20 using a scanning electron microscope.

[0126] (Method for manufacturing a framed mask)

[0127] Next, refer to Figures 7 to 13The manufacturing method of the framed mask according to this embodiment will be described. First, the manufacturing method of the mask 20 will be described. First, a first layer 30 is prepared. A silicon wafer may also be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may also be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), etc.

[0128] Next, as Figure 7 As shown, an intermediate layer forming process is performed to form an intermediate layer 50 on the second surface 302 of the first layer 30. The intermediate layer 50 includes, for example, a first intermediate layer 51. The intermediate layer 50 can be formed integrally on the second surface 302. The intermediate layer 50 can be formed, for example, by a vacuum film deposition method such as sputtering.

[0129] Next, as Figure 8 As shown, a second layer forming process is performed to form a second layer 40 on the intermediate layer 50. This results in a laminate 22 having a first layer 30, an intermediate layer 50, and a second layer 40. The second layer 40 can be formed integrally with the intermediate layer 50.

[0130] The second layer 40 can be formed, for example, by a plating process. Here, the intermediate layer 50 is used as a power supply electrode, and the second layer 40 is formed by electroplating. More specifically, a plating solution is supplied to the side of the intermediate layer 50 opposite to the side of the first layer 30. For example, the intermediate layer 50 and the first layer 30 are immersed together in an electroplating bath filled with plating solution. The plating solution components are deposited on the side of the intermediate layer 50 opposite to the side of the first layer 30 to form the second layer 40. Thus, the second layer 40 is attached to the intermediate layer 50.

[0131] The composition of the plating solution used is appropriately determined according to the required characteristics of the second layer 40. For example, if the second layer 40 is composed of an iron alloy containing nickel, a mixed solution containing a nickel compound and a solution containing an iron compound can be used as the plating solution. For example, a mixed solution containing nickel sulfamate, nickel bromide, and ferrous sulfamate can be used. Alternatively, if the second layer 40 is composed of nickel, a solution containing a nickel compound can be used as the plating solution. For example, a nickel sulfamate solution can be used. Furthermore, if the second layer 40 is composed of a nickel alloy containing cobalt, a mixed solution containing a nickel compound and a solution containing a cobalt compound can be used as the plating solution. For example, a cobalt sulfamate solution can be used. It should be noted that various additives can be included in the above-mentioned plating solutions. Examples of additives include pH buffers such as boric acid, malonic acid, and saccharin.

[0132] After the second layer 40 is formed, it can be annealed (fired). This allows the second layer 40 formed by the plating process to recrystallize, thereby reducing its coefficient of thermal expansion. Generally, even if rolled materials and plated materials have the same material composition, the coefficient of thermal expansion of the plated material tends to be higher than that of the rolled material. Therefore, recrystallization of the second layer 40 can reduce its coefficient of thermal expansion. During this annealing process, the second layer 40 can be heated to, for example, 600°C for 5 minutes.

[0133] It should be noted that in the second layer formation process, the specific method of plating is not particularly limited as long as the second layer 40 can be formed. For example, electroless plating can be performed instead of electroplating. In the case of electroless plating, since there are no electrodes as in electroplating, the thickness of the second layer 40 formed by electroless plating can be made uniform. It should be noted that in the case of electroless plating, a catalyst layer (not shown) can be provided on the side of the intermediate layer 50 opposite to the side of the first layer 30. Even in the case of electroplating, the same catalyst layer can be provided on the intermediate layer 50.

[0134] Although not illustrated, the pressing process for pressing the second layer 40 can also be performed. For example, a substrate such as a silicon wafer or glass wafer, which is different from the first layer 30, can be pressed onto the second layer 40. If the surface of the substrate is flatter than the fourth surface 402 of the second layer 40, the flatness of the fourth surface 402 can be improved by the pressing process. If the surface of the substrate can contain a raised or recessed pattern, the raised or recessed pattern can be imparted to the fourth surface 402 by the pressing process. The pressing process can be performed before the annealing process of the second layer 40.

[0135] Although not shown, the laminate 22 may have a protective layer on the fourth surface 402 of the second layer 40. The protective layer may contain, for example, the same material as the first intermediate layer 51. By forming the protective layer on the fourth surface 402, etching of the fourth surface 402 can be prevented during the first processing step described later. The protective layer may be removed simultaneously with the first intermediate layer 51.

[0136] Next, as Figure 9 As shown, a resist forming process is performed to partially form a resist layer 38 on the first surface 301 of the first layer 30. A resist opening 381 opposite to the first opening 31 is formed in the resist layer 38.

[0137] The resist layer 38 can be a photoresist. In this case, firstly, a liquid resist material is coated onto the first surface 301, thereby forming the resist layer 38 on the first surface 301. After coating, a process of heating the resist layer 38 can be performed. Next, a photolithography process of exposing and developing the resist layer 38 is performed. As a result, resist openings 381 can be formed in the resist layer 38.

[0138] Although not illustrated, the resist layer 38 may be a silicon oxide film locally formed on the first surface 301. The silicon oxide film may be formed, for example, by performing a localized thermal oxidation process on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are laminated onto the first layer 30.

[0139] Next, as Figure 10 As shown, a first processing step is performed, wherein the first layer 30 is etched from the first surface 301 side, thereby forming a first opening 31 in the first layer 30. The etching in the first processing step can be dry etching using an etching gas. The etching gas is an example of the aforementioned etchant. Since the intermediate layer 50 is resistant to the etchant, therefore... Figure 10 As shown, it can suppress etching up to the second layer 40.

[0140] When the etching process is deep reactive ion etching, the etching process is performed as follows: An etching gas is introduced into the chamber. Furthermore, the etching gas is plasmaized by applying a voltage to the space within the chamber. Free radicals, ions, etc., in the plasma collide with the first surface 301 through the resist opening 381, thereby... Figure 10 As shown, a first opening 31 can be formed in the first layer 30. The etching gas is, for example, SF6 gas.

[0141] After the hole reaches the intermediate layer 50, a resist removal process to remove the resist layer 38 can be performed. For example, a resist treatment solution is supplied to the first surface 301.

[0142] When the resist layer 38 is a photoresist, the resist treatment solution may contain, for example, N-methyl-2-pyrrolidone. The resist layer 38 can be removed by irradiating it with oxygen plasma.

[0143] When the resist layer 38 is a silicon oxide film, the resist processing solution may contain, for example, hydrofluoric acid. Alternatively, the resist layer 38 can be removed by dry etching using CF4 gas or the like.

[0144] After the first processing step, an intermediate layer removal step can be performed to remove the intermediate layer 50. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. Thus, as... Figure 11As shown, the intermediate layer 50 that overlaps with the first opening 31 when viewed from above can be removed. The etching of the intermediate layer 50 can be dry etching using fluorine-based gases or wet etching using acidic etching solutions.

[0145] There is no particular order for the resist removal process and the intermediate layer removal process. The resist removal process and the intermediate layer removal process can be performed simultaneously.

[0146] Next, a second processing step is performed to form multiple second openings 41 in the second layer 40. For example, as... Figure 12 As shown, laser L is irradiated onto the third surface 401 of the second layer 40. This forms a second opening 41 in the second layer 40. Laser L can be a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, or the like.

[0147] The second processing step can be carried out while a protective film or protective membrane is formed on the fourth surface 402 of the second layer 40.

[0148] The protective film is a component adhered to the fourth surface 402. The protective film may include, for example, a resin film and an adhesive layer. The protective film is adhered to the fourth surface 402 in such a manner that the adhesive layer contacts the fourth surface 402. The adhesive layer may be an adhesive layer or an absorbent layer.

[0149] The protective film is formed by coating a resin-containing liquid onto the fourth surface 402. Coating methods include, for example, rod coating, spin coating, and spray coating.

[0150] The protective film or protective membrane can be removed after the second processing step.

[0151] Preferably, the protective film or protective membrane is less reactive to laser light than the second layer 40. Reactivity refers to the speed at which the protective film or protective membrane or the second layer 40 is processed by laser.

[0152] In the second processing step, firstly, the laminate 22 is placed on the stage with the fourth surface 402 facing the stage. Next, the position of the irradiation head relative to the laminate 22 is adjusted. During the position adjustment step, both the irradiation head and the stage can be moved. By repeatedly performing laser irradiation and position adjustment, multiple second openings 41 can be formed in the second layer 40. In this way, the mask 20 can be obtained.

[0153] Alternatively, a laser mask corresponding to the pattern of the plurality of second openings 41 can be used. In this case, a condenser lens can be placed between the laser mask and the second layer 40. By using a laser processing method with a reduced projection optics system, the plurality of second openings 41 can be formed.

[0154] A second opening 41 can be formed by a single laser emission.

[0155] A second opening 41 can also be formed by two or more laser emission processes. In this case, the depth of the recess formed in the second layer 40 by a single laser emission is less than the thickness of the second layer 40.

[0156] The laser can be adjusted according to the second wall surface 42 of the second opening 41, which includes the conical surface 42a.

[0157] For example, the irradiation area of ​​the laser corresponding to the second opening 41 can be changed each time it is emitted. For example, the second processing step may include: a first emission step of irradiating the third surface 401 with a laser having a first irradiation area; and a second emission step of irradiating the third surface 401 with a laser having a second irradiation area larger than the first irradiation area. The first irradiation area may correspond to the area of ​​the second opening 41 in the fourth surface 402. The second irradiation area may correspond to the area of ​​the second opening 41 in the third surface 401. The second processing step may include three or more emission steps. The irradiation area and intensity of the laser in each emission step are set such that the second wall surface 42 includes a conical surface 42a.

[0158] For example, a transmission section of a laser mask may include a first transmission region having a first transmittance and a second transmission region having a second transmittance lower than the first transmittance. The outline of the first transmission region may correspond to the outline of the second opening 41 in the fourth surface 402. The second transmission region may surround the first transmission region when viewed from above. The outline of the second transmission region may correspond to the outline of the second opening 41 in the third surface 401. A transmission section may include three or more transmission regions. The shape and transmittance of each transmission region are set such that the second wall surface 42 includes a conical surface 42a.

[0159] It should be noted that, as described above, the second layer 40 in this embodiment is formed by a plating process. In this case, the second layer 40 retains stress that acts in the direction of contraction when viewed from above. Therefore, even if the temperature of the second layer 40 rises and the second layer 40 thermally expands, such as during vapor deposition, the positional accuracy of the second opening 41 can be maintained as long as the aforementioned stress remains.

[0160] Next, the manufacturing method of the frame 60 will be described. First, a plate-shaped component containing the aforementioned glass or metal material is prepared, and the frame 60 with the third opening 61 is manufactured by cutting it. As the cutting tool for cutting the plate-shaped component, a drill bit, a lathe tool, a milling cutter, an end mill, etc., can be used.

[0161] After fabricating the mask 20 and frame 60, an installation process is performed to mount the frame 60 onto the mask 20. Specifically, as follows... Figure 13 As shown, a connecting layer 70 is formed circumferentially along the edge of the third opening 61 on the sixth surface 601 of the frame 60. The connecting layer 70 may include spacers 75. The connecting layer 70 is softened by heating or the like before the mask 20 is connected to the frame 60.

[0162] Next, the mask 20 is supported from the first layer 30 side using the support unit 80. The support unit 80 supports the inner region 36 of the first layer 30 from the first surface 301 side. Then, the fifth surface 601 of the frame 60 is aligned with the first surface 301 of the first layer 30, and the support unit 80 is moved to bring the mask 20 close to the connecting layer 70 on the frame 60. At this time, the alignment marks of the frame 60 and the alignment marks of the mask 20 are used to position the mask 20 relative to the frame 60. If the mask 20 is warped, a pressing unit opposite to the support unit 80 is used to correct the warping while bringing the mask 20 close to the connecting layer 70.

[0163] Next, a pressing process is performed to press the mask 20 and the frame 60 together. As a result, the connecting layer 70 is flattened, and its thickness becomes uniform. Specifically, the thickness of the connecting layer 70 becomes a uniform thickness corresponding to the dimensions of the spacer 75. Thus, the second layer 40 is parallel to the frame 60.

[0164] Next, the connecting layer 70 is hardened by cooling or the like, thus fixing the mask 20 and the frame 60 together. In this way, a mask 15 with a frame can be obtained.

[0165] Next, an example of a method for manufacturing an organic device 100 using a framed mask 15 will be described.

[0166] First, a substrate 110 on which the first electrode 120 is formed is prepared. The substrate 110 can be a silicon wafer. The first electrode 120 can be formed, for example, by patterning the conductive layer constituting the first electrode 120 on the substrate 110 using a vacuum deposition method or the like, and then using a photolithography method or the like. The patterning of the conductive layer can be performed using an apparatus for performing semiconductor manufacturing processes. An insulating layer 160 located between two adjacent first electrodes 120 can also be formed on the substrate 110.

[0167] Next, an organic layer 130, including a first organic layer 130A, a second organic layer 130B, etc., is formed on the first electrode 120. For example, firstly, a framed mask 15 including a first mask 20 is placed in the vapor deposition apparatus 10, and the first organic layer 130A is formed by vapor deposition using the first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, a framed mask 15 including a second mask 20 is placed in the vapor deposition apparatus 10, and the second organic layer 130B is formed by vapor deposition using the second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a framed mask 15 including a third mask 20 is placed in the vapor deposition apparatus 10, and a third organic layer is formed by vapor deposition using the third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer. The frame 60 is held when the framed mask 15 is placed in and removed from the vapor deposition apparatus 10. This suppresses the possibility of damage to the first layer 30 or deformation of the second layer 40. Furthermore, the frame 60 is supported by the mask holder 9 within the vapor deposition apparatus 10. This suppresses the possibility of interference between the mask holder 9 and the first opening 31 of the first layer 30 or the second opening 41 of the second layer 40. In other words, it suppresses the possibility that the adhesion of the vapor deposition material to the substrate 110 may be hindered by the mask holder 9.

[0168] Next, a second electrode 140 is formed on the organic layer 130. For example, as... Figure 1 As shown, the second electrode 140 can be integrally formed on the first surface 111 by a vacuum deposition method or the like. Alternatively, although not shown, the second electrode 140 can be formed by vapor deposition using a mask 20, similar to the organic layer 130. Afterwards, a sealing layer (not shown) or the like can be formed on the second electrode 140. In this way, the organic device 100 can be obtained.

[0169] Multiple organic devices 100 can be formed on a single substrate 110. Each organic device 100 can correspond to a first opening 31 of the mask 20. In this case, a process of cutting the substrate 110 can be performed. For example, the substrate 110 can be cut along a region of the substrate 110 corresponding to the inner region 36 of the mask 20. Thus, multiple organic devices 100 can be obtained.

[0170] The effect of mask 20 when forming organic layer 130, second electrode 140, etc. by vapor deposition using mask 20 will be explained.

[0171] The mask 20 includes a first layer 30 comprising silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, the difference between the thermal expansion generated on the substrate 110 and the thermal expansion generated on the mask 20 can be suppressed. As a result, the decrease in the accuracy of the position, shape, etc. of the vapor-deposited layers such as the organic layer 130 and the second electrode 140 due to the thermal expansion of the mask 20 can be suppressed. Therefore, an organic device 100 with high device density can be provided.

[0172] The mask 20 has a second layer 40 including a plurality of second openings 41. By providing the second layer 40 separately from the first layer 30, the thickness of the second layer 40 can be reduced, thus suppressing the generation of shadows during the vapor deposition process. In addition, by properly ensuring the interval S6 between the first wall surface 32 and the second openings 41 when viewed from above, the thickness of the first layer 30 can be properly ensured while suppressing shadows.

[0173] Various modifications can be made to the above-described embodiment. Hereinafter, variations will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the description, parts that can be configured in the same way as the corresponding parts in the above-described embodiment will use the same reference numerals as those used for the corresponding parts in the above-described embodiment. Repeated descriptions are omitted. Furthermore, where it is clear that the effects obtained in the above-described embodiment can also be obtained in the variations, their descriptions are sometimes omitted as well.

[0174] For example, mask 20 may not include an intermediate layer 50 between the first layer 30 and the second layer 40. In this case, the second surface 302 of the first layer 30 and the third surface 401 of the second layer 40 can be directly connected.

[0175] Alternatively, the second opening 41 can also be formed in the second layer forming process. For example, as... Figure 14A As shown, an insulating layer 55 is formed on the intermediate layer 50 after the intermediate layer formation process and before the second layer formation process. The insulating layer 55 can be formed by chemical vapor deposition using tetraethyl orthosilicate (Si(OC2H5)4) as a raw material. Next, the insulating layer 55 is partially removed by dry etching or the like, and a plurality of insulating protrusions 56 are formed on the intermediate layer 50 in a pattern corresponding to the second opening 41. The insulating protrusions 56 are formed at positions that overlap with the second opening 41 on the intermediate layer 50 when viewed from above. Then, as... Figure 14C As shown, a plating process is performed on the intermediate layer 50 where the insulating protrusion 56 is formed. As a result, the second opening 41 can be formed in the second layer 40 at the same time as the second layer 40 is formed.

[0176] In addition, such as Figure 15As shown, a step portion 65 can be provided on the inner periphery of the frame 60. The step portion 65 is recessed in the direction from the fifth surface 601 toward the sixth surface 602. The step portion 65 is formed by a surface 651 extending from the inner edge 604 of the frame 60 toward the outer edge 603, and a surface 652 connecting the surface 651 to the fifth surface 601. The distance between the surface 651 and the sixth surface 602 is less than the distance between the fifth surface 601 and the sixth surface 602. In this case, the outer edge 303 on the first surface 301 side of the first layer 30 can be accommodated in the step portion 65, and more specifically, in the space divided by the surface 651 and the surface 652. In this case, the outer edge 303 of the first layer 30 is surrounded by the frame 60. As a result, the possibility of damage to the outer region 35 of the first layer 30 can be more effectively suppressed.

[0177] When the frame 60 is provided with a stepped portion 65, such as Figure 15 As shown, the connecting layer 70 can be disposed not only between the frame 60 and the first surface 301, but also between the frame 60 and the outer edge 303. This allows for a more secure connection between the frame 60 and the first layer 30.

[0178] Alternatively, if the frame 60 is provided with a stepped portion 65, such as Figure 16 As shown, the connecting layer 70 may also be disposed only between the frame 60 and the outer edge 303, instead of between the frame 60 and the first surface 301. In this case, since the connecting layer 70 is not disposed between the frame 60 and the first surface 301, it is not necessary to adjust the thickness of the connecting layer 70 in order to make the frame 60 parallel to the second layer 40.

[0179] Furthermore, when the frame 60 is provided with a stepped portion 65, the fifth surface 601 of the frame 60 can be flush with the fourth surface 402. In this case, when a vapor-deposited layer is formed on the substrate 110 or the constituent elements on the substrate 110 by means of a mask 20, the second layer 40 can also be made to contact the substrate 110 or the constituent elements on the substrate 110.

[0180] Figure 17 This figure illustrates an example of a device 200 comprising an organic device 100. The device 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is formed by vapor deposition using a mask 20. The device 200 is, for example, a smartphone. The device 200 can also be a tablet terminal, a wearable terminal, etc. Wearable terminals include smart glasses, head-mounted displays, etc.

[0181] The constituent elements disclosed in the above embodiments and modifications can also be appropriately combined as needed. Alternatively, several constituent elements can be deleted from all the constituent elements shown in the above embodiments and modifications.

[0182] Symbol Explanation

[0183] 10: Evaporation apparatus; 15: Framed mask; 20: Mask; 201: Incident surface; 202: Exit surface; 30: First layer; 301: First face; 302: Second face; 31: First opening; 32: First wall surface; 40: Second layer; 401: Third face; 402: Fourth face; 41: Second opening; 43: Peripheral area; 44: Effective area; 50: Intermediate layer; 51: First intermediate layer; 60: Frame; 601: Fifth face; 602: Sixth face; 61: Third opening; 65: Step; 70: Connecting layer; 75: Spacer; 100: Organic device.

Claims

1. A mask with a frame, comprising: a first layer including a first surface, a second surface on the opposite side of the first surface, at least one first opening through from the first surface to the second surface, an outer edge, and an outer region between the outer edge and the first opening in plan view; a second layer including a third surface opposite to the second surface, a fourth surface on the opposite side of the third surface, and a plurality of second openings through from the third surface to the fourth surface and overlapping the first opening in plan view; and a frame connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer, the first layer contains silicon, at least a part of the frame extends outside the outer edge of the first layer in plan view, the frame contains glass or metal, a step portion in which the outer edge of the first layer is accommodated is formed in the frame.

2. The framed mask of claim 1, wherein, a connection layer is provided between the frame and the first layer.

3. The framed mask of claim 2, wherein, the connection layer includes a spacer.

4. The framed mask of claim 1, wherein, a spacer is provided between the frame and the first layer.

5. A mask with a frame, comprising: a first layer including a first surface, a second surface on the opposite side of the first surface, at least one first opening through from the first surface to the second surface, an outer edge, and an outer region between the outer edge and the first opening in plan view; a second layer including a third surface opposite to the second surface, a fourth surface on the opposite side of the third surface, and a plurality of second openings through from the third surface to the fourth surface and overlapping the first opening in plan view; and a frame connected to the outer edge of the first layer and / or the first surface of the outer region of the first layer, the first layer contains silicon, at least a part of the frame extends outside the outer edge of the first layer in plan view, the frame contains glass or metal, a spacer is provided between the frame and the first layer.

6. The framed mask of claim 5, wherein, a connection layer is provided between the frame and the first layer.

7. The framed mask of claim 6, wherein, the connection layer includes a spacer.

8. The framed mask of claim 2 or 6, wherein, the connection layer contains a glass material, an inorganic material, a metal material, or a resin material.

9. The framed mask of claim 2 or 6, wherein, the connection layer is provided only between the outer edge of the first layer and the frame.

10. The framed mask of claim 1 or 5, wherein, the frame includes a fifth surface facing the same side as the fourth surface, a sixth surface on the opposite side of the fifth surface, and a third opening through from the fifth surface to the sixth surface and overlapping the first opening in plan view.

11. The framed mask of claim 1 or 5, wherein, an intermediate layer is included between the first layer and the second layer.

12. A method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by an evaporation method using the mask with a frame according to claim 1 or 5.

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