Crosstalk suppression device, driving system and vehicle

Abstract

The invention discloses a crosstalk suppression device, a driving system and a vehicle, and relates to the technical field of power electronics. The crosstalk suppression device comprises a switching circuit and a crosstalk voltage detection circuit, the first end of the switching circuit is suitable for being connected with the control end of any power device in the half-bridge circuit, and the second end of the switching circuit is suitable for being connected with a first ground signal; the input end of the crosstalk voltage detection circuit is suitable for receiving gate-source voltage of the power device, the output end of the crosstalk voltage detection circuit is connected with the control end of the switching circuit, and the crosstalk voltage detection circuit is used for controlling the switching circuit to be switched on when it is determined that crosstalk current flows out of the control end of the power device according to the gate-source voltage. Therefore, crosstalk current is discharged. Therefore, bridge arm crosstalk of the power device during high-speed switching can be suppressed, and stable and normal work of the driving system can be ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronics, and in particular to a crosstalk suppression device, a driving system and a vehicle. BACKGROUND

[0002] Compared with the traditional Si material, the SiC (Silicon Carbide) material has the characteristics of large band gap, high breakdown field strength, high thermal conductivity, etc. When the SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) power device is applied to an electric vehicle inverter, due to its fast switching speed, the rate of change of the drain-source voltage is relatively high. When applied to a complementary conduction half-bridge structure, the power device of one bridge arm is in high-frequency switching operation, which will introduce a crosstalk voltage to the gate-source voltage of the power device on the other side in the off state. Once the total voltage obtained by superimposing the crosstalk voltage and the gate off voltage exceeds the turn-on threshold voltage of the SiC MOSFET power device, a shoot-through short circuit between the upper and lower bridge arms will occur, which may cause damage to the power device.

[0003] Due to the existence of the MOS tube gate-drain parasitic capacitance, in the process of turning on and off the MOS tube, the dv / dt of the drain-source voltage is relatively large, which will generate a displacement current Igd=Cgd*dv / dt on the gate-drain capacitance of the opposite bridge arm. This current will charge the gate capacitance, causing the gate voltage to rise, which may cause a false turn-on. Therefore, the related technology proposes a crosstalk suppression method, including passive suppression and active suppression. The passive suppression method mainly includes the method of increasing the gate drive resistance. This method slows down the turn-on and turn-off time by increasing the drive resistance, so that the dv / dt in the switching process can be reduced, and therefore the gate crosstalk current Cgd*dV / dt will also be reduced accordingly. However, this method always limits the current rate, and the switching speed of the SiC power device decreases, the switching loss increases, and the overall efficiency is affected. The active suppression method is to add a triode between the gate and the source. When the gate-source voltage of the SiC MOSFET exceeds the threshold value, the triode is turned on by applying a turn-on signal, which can discharge the charge in the gate capacitance and reduce the gate-source voltage, thereby avoiding the false turn-on of the gate due to crosstalk. Since the triode can only conduct in one direction, it can only suppress the positive crosstalk voltage and lacks the suppression effect of the negative crosstalk voltage. SUMMARY

[0004] The purpose of the present application is to provide a crosstalk suppression device, a driving system and a vehicle to suppress the bridge arm crosstalk of the power device in high-speed switching and ensure that the driving system can work stably and normally.

[0005] In a first aspect, an embodiment of the present application provides a crosstalk suppression device, comprising: a switch circuit, a first end of the switch circuit being adapted to be connected to a control end of any power device in a half-bridge circuit, and a second end of the switch circuit being adapted to be connected to a first ground signal; a crosstalk voltage detection circuit, an input end of the crosstalk voltage detection circuit being adapted to receive a gate-source voltage of the power device, and an output end of the crosstalk voltage detection circuit being connected to a control end of the switch circuit, the crosstalk voltage detection circuit being configured to control the switch circuit to be turned on when it is determined that a crosstalk current flows out of the control end of the power device according to the gate-source voltage, so as to discharge the crosstalk current.

[0006] In a second aspect, an embodiment of the present application provides a drive system, comprising: a half-bridge circuit, comprising a first power device and a second power device connected in series; the crosstalk suppression device according to the first aspect; and a drive circuit, configured to output a first drive signal to a control end of the first power device and output a second drive signal to a control end of the second power device, wherein the first drive signal and the second drive signal are complementary.

[0007] In a third aspect, an embodiment of the present application provides a vehicle, comprising the drive system according to the second aspect.

[0008] The crosstalk suppression device, the drive system and the vehicle according to the embodiments of the present application have the switch circuit connected between the control end of any power device in the half-bridge circuit and the first ground signal, and the crosstalk voltage detection circuit is configured to control the switch circuit to be turned on when it is determined that the crosstalk current flows out of the control end of the power device according to the gate-source voltage, so as to discharge the crosstalk current. Therefore, the bridge arm crosstalk of the power device during high-speed switching can be suppressed, and the drive system can be ensured to work stably and normally.

[0009] Additional aspects and advantages of the present application will be better understood from the following description with reference to the drawings. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 is a schematic diagram of a half-bridge circuit according to an embodiment of the present application; Figure 2 is a structural schematic diagram of a crosstalk suppression device according to an embodiment of the present application; Figure 3 is a schematic diagram of a crosstalk suppression device and its peripheral circuit according to an embodiment of the present application; Figure 4 is a structural schematic diagram of a crosstalk voltage detection circuit according to an embodiment of the present application; Figure 5 is a structure diagram of a hysteresis comparator of one embodiment of the present application; Figure 6 is an input and output waveform diagram of the hysteresis comparator of one embodiment of the present application; Figure 7 is a structure block diagram of a drive system of an embodiment of the present application; Figure 8 is a structure block diagram of a vehicle of an embodiment of the present application. DETAILED DESCRIPTION

[0011] The technical problem to be solved by the present application is the problem of bridge arm crosstalk of a power device when switching at high speed. The present application provides a device with crosstalk suppression function. The hysteresis comparator has the characteristic of double limit comparison. When the power device is switching at high speed, the positive and negative crosstalk is effectively suppressed, and the drive system can work stably and normally.

[0012] In the application of SiC MOSFET power device driving, the crosstalk suppression of the power device is the focus of attention. In actual application, the SiC power device will use negative voltage to turn off. For example, as shown in Figure 1 , in the process of turning on the upper bridge arm of the SiC power device, the gate voltage of the opposite side bridge arm will be raised. If the raised gate voltage Vgs at this time exceeds the threshold voltage Vgs(th) of the lower bridge arm power device, the lower bridge arm will be turned on. Because the upper bridge arm has been turned on at this time, it will cause the upper and lower bridge arms to be short-circuited in series, resulting in a large current. If no protection is taken, it will cause damage to the power device. Therefore, the positive crosstalk needs to be suppressed. In another case, in the process of turning off the upper bridge arm of the SiC power device, the gate voltage of the opposite side bridge arm will be lowered. If the gate voltage at this time exceeds the negative voltage withstand limit value, the gate oxide layer of the power device will be broken down, causing damage to the device and affecting the normal operation of the inverter system. Therefore, the positive and negative gate crosstalk voltages need to be suppressed respectively.

[0013] Embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the drawings are exemplary and are intended to explain the present application, and cannot be understood as a limitation of the present application.

[0014] The crosstalk suppression device, drive system and vehicle of an embodiment of the present application will be described below with reference to the accompanying drawings.

[0015] As shown in Figure 2 , Figure 3 , the crosstalk suppression device 100 includes a switching circuit 10 and a crosstalk voltage detection circuit 20.

[0016] The first terminal of the switching circuit 10 is adapted to connect to the half-bridge circuit 200. Figure 2 , Figure 3 The control terminal of any power device T (not shown) is connected to the control terminal of the switching circuit 10. The second terminal of the switching circuit 10 is adapted to connect to the first ground signal VEE. The input terminal of the crosstalk voltage detection circuit 10 is adapted to receive the gate-source voltage of the power device T. The output terminal of the crosstalk voltage detection circuit 10 is connected to the control terminal of the switching circuit 10. The crosstalk voltage detection circuit 10 is used to control the switching circuit 10 to conduct when it is determined from the gate-source voltage that the crosstalk current flows out from the control terminal of the power device T, so as to discharge the crosstalk current.

[0017] In some embodiments of the present invention, see Figure 2 , Figure 3 The switching circuit 10 includes a first switching transistor Q1 (which may be a MOSFET). The first terminal of the first switching transistor Q1 is adapted to be connected to the control terminal of the power device T, and the second terminal of the first switching transistor Q1 is adapted to be connected to the first ground signal VEE. The control terminal of the first switching transistor Q1 is connected to the output terminal of the crosstalk voltage detection circuit 10.

[0018] like Figure 3 In the circuit shown, the driver IC (i.e., driver circuit 300) is responsible for driving the SiC MOSFET power device. VDD is its power supply, PWM (Pulse Width Modulation) is the control signal output by the MCU (Microcontroller Unit), GND and GND_HV are the reference grounds for the low voltage domain and the high voltage domain, respectively. The crosstalk suppression device 100 first acquires the gate signal Vgs (i.e., gate-source voltage) of the power device T. After processing by the crosstalk voltage detection circuit 20, it outputs a drive signal to the first switch Q1, controlling the first switch Q1 to conduct and clamp the gate potential of the power device T to VEE, thereby achieving the effect of suppressing crosstalk voltage.

[0019] For example, when the crosstalk voltage detection circuit 20 determines that the crosstalk current flows out from the control terminal of the power device T based on the gate-source voltage, it is specifically used to: determine that the crosstalk current flows out from the control terminal of the power device T when the gate-source voltage is greater than or equal to the upper threshold voltage or less than or equal to the lower threshold voltage.

[0020] In one implementation, such as Figure 4As shown, the crosstalk voltage detection circuit 20 includes: a hysteresis comparator 21, an XNOR gate, a buffer unit 22, and a switching unit 23; wherein, the first input terminal of the hysteresis comparator 21 is adapted to receive the gate-source voltage, the second input terminal of the hysteresis comparator 21 is adapted to connect to the reference voltage Vref, the output terminal of the hysteresis comparator 21 is connected to the first terminal of the buffer unit 22, the first input terminal and the second input terminal of the XNOR gate, respectively, the second terminal of the buffer unit 22 is adapted to connect to the second ground signal GND, the output terminal of the XNOR gate is connected to the control terminal of the switching unit 23, the first terminal of the switching unit 23 is adapted to connect to the first preset power supply VCC, and the second terminal of the switching unit 23 is adapted to connect to the first ground signal VEE.

[0021] like Figure 4 , Figure 5 As shown, the hysteresis comparator 21 includes: an operational amplifier 211, a first resistor R1, and a second resistor R2; The inverting input of the operational amplifier 211 is adapted to receive the gate-source voltage. The non-inverting output of the operational amplifier 211 is connected to the first end of the first resistor R1 and the first end of the second resistor R2. The second end of the first resistor R1 is adapted to be connected to the reference voltage Vref. The second end of the second resistor R2 is connected to the output of the operational amplifier 211 and serves as the output of the hysteresis comparator 21.

[0022] In this invention, the signal processing section of the crosstalk voltage detection circuit 20 uses a hysteresis comparator 21. Compared with a conventional single-threshold comparator, it has stronger anti-interference capabilities. Once the output state changes, the input signal must change in the opposite direction and cross the entire hysteresis interval (from Vh to Vl, or vice versa) to cause the output to flip again. Small noises present near the threshold voltage (as long as they do not exceed the hysteresis interval) will not cause output jitter. Figure 4 , Figure 5 As shown, the hysteresis comparator 21 has two voltage comparison thresholds, with the upper threshold being... The lower threshold is Ui is the input of hysteresis comparator 21, Uo is the output of hysteresis comparator 21, R1 and R2 are feedback resistors, VDD is the positive power supply voltage of hysteresis comparator 21, VSS is the negative power supply voltage of hysteresis comparator 21, and Vref is the reference voltage.

[0023] like Figure 6 As shown, the basic working principle of the hysteresis comparator 21 is as follows: When the input voltage increases, if it exceeds the lower threshold Vl, the hysteresis comparator 21 will not be triggered. When the input voltage exceeds the upper threshold Vh, the hysteresis comparator 21 will be triggered, and the output voltage will change from high level to low level. When the input voltage decreases, if it is less than the upper threshold Vh, the hysteresis comparator 21 will not be triggered. When the input voltage is less than the lower threshold Vl, the hysteresis comparator 21 will be triggered, and the output voltage will change from low level to high level.

[0024] For example, see Figure 4 The buffer unit 22 includes a first capacitor C1 and a third resistor R3.

[0025] The first terminal of the first capacitor C1 is connected to the second input terminal of the XNOR gate and the output terminal of the hysteresis comparator 21, respectively. The second terminal of the first capacitor C1 is adapted to be connected to the second ground signal GND. The third resistor R3 is connected in parallel with the first capacitor C1.

[0026] For example, see Figure 4 The switching unit 23 includes a second switching transistor Q2 and a third switching transistor Q3.

[0027] Wherein, the first end of the second switch Q2 is adapted to be connected to the first preset power supply VCC, the second end of the second switch Q2 is connected to the first end of the third switch Q3 and the control end of the switch circuit 10 respectively, the second end of the third switch Q3 is adapted to be connected to the first ground signal VEE, and the control end of the second switch Q2 is connected to the control end of the third switch Q3 and the output end of the XNOR gate respectively.

[0028] In some embodiments, see Figure 4 The crosstalk voltage detection circuit 20 also includes: a first digital isolator ISO1 and a second digital isolator ISO2.

[0029] The input terminal of the first digital isolator ISO1 is adapted to receive the gate-source voltage. The output terminal of the first digital isolator ISO1 is connected to the first input terminal of the hysteresis comparator 21. The first power supply terminal of the first digital isolator ISO1 is adapted to be connected to the first preset power supply VCC. The second power supply terminal of the first digital isolator ISO1 is adapted to be connected to the second preset power supply VDD. The first ground terminal of the first digital isolator ISO1 is adapted to be connected to the third ground signal GND_HV. The second ground terminal of the first digital isolator ISO1 is adapted to be connected to the second ground signal GND. The input terminal of the second digital isolator ISO2 is connected to the output terminal of the XNOR gate. The output terminal of the second digital isolator ISO1 is connected to the control terminal of the switching unit 22. The first power supply terminal of the second digital isolator ISO2 is adapted to be connected to the first preset power supply VCC. The second power supply terminal of the second digital isolator ISO2 is adapted to be connected to the second preset power supply VDD. The first ground terminal of the second digital isolator ISO2 is adapted to be connected to the third ground signal GND_HV. The second ground terminal of the second digital isolator ISO2 is adapted to be connected to the second ground signal GND.

[0030] In this invention, based on the working principle of the hysteresis comparator 21, the input voltage signal of the hysteresis comparator 21 is set as Ui, where Ui is the signal output after the gate signal Vgs is isolated by the first digital isolator ISO1. From the formulas for the upper and lower threshold values ​​of the hysteresis comparator 21, it can be seen that the determination of R1, R2, VCC, and Vref is related to the upper and lower threshold values. To prevent the gate-source voltage of the power device T from exceeding the conduction threshold voltage Vgs(th) due to crosstalk voltage, an upper threshold voltage for triggering protection needs to be determined. Vh = 0.8Vgs(th) is taken as the upper threshold voltage for triggering protection of the crosstalk suppression device 100. To prevent the gate voltage of the power device T from becoming negatively overvoltage due to crosstalk voltage, a lower threshold voltage for triggering protection is determined. Vl = 0.8Vgss- is taken as the lower threshold voltage for triggering protection of the crosstalk suppression device 100.

[0031] The following is combined with Figure 3 , Figure 4 The working principle of the crosstalk suppression device 100 according to an embodiment of the present invention is described as follows: During the positive crosstalk voltage suppression process, when the opposite bridge arm is turned on, the gate voltage of the current bridge arm power device will be affected and start to rise from the gate voltage in the off state. If it rises to the upper threshold, it will trigger the hysteresis comparator 21, and its output voltage will change from high level to low level. The potential at point A will change rapidly, but since the voltage of capacitor C1 cannot change abruptly, the potential at point B will remain unchanged temporarily. According to the principle of the XNOR gate, the XNOR gate outputs a high level when the inputs are the same and a low level when the inputs are different. Therefore, the XNOR gate will output a low level at this time. After being isolated by the second digital isolator ISO2, it is output to the push-pull circuit (i.e., the switching circuit 23). The second switch Q2 is turned on and outputs the VCC voltage. The first switch Q1 is turned on, and the gate potential of the power device T will be clamped at VEE, thereby preventing the gate voltage of the power device T from being raised and causing false turn-on, thus avoiding the gate from being affected by the positive crosstalk voltage.

[0032] During the negative crosstalk voltage suppression process, when the opposite bridge arm is turned off, the gate voltage of the current bridge arm will be affected and decrease from the gate voltage in the off state. If it decreases to the lower threshold, the hysteresis comparator 21 will be triggered, and its output voltage will change from low level to high level. The potential at point A will change rapidly, but since the voltage of capacitor C1 cannot change abruptly, the potential at point B will remain unchanged temporarily. According to the principle of the XNOR gate, the XNOR gate outputs a high level when the inputs are the same and a low level when the inputs are different. Therefore, the XNOR gate will output a low level at this time. After isolation by the second digital isolator ISO2, the output is sent to the push-pull circuit. Q2 conducts and outputs VCC voltage. Q1 conducts, and the gate potential of the power device T will be clamped at VEE, thereby avoiding the gate voltage of the power device T from being suppressed and causing negative overvoltage, thus avoiding the gate from being affected by negative crosstalk voltage.

[0033] The present invention also proposes a driving system.

[0034] like Figure 7 As shown, the drive system 1000 includes: a half-bridge circuit 200, a drive circuit 300, and a crosstalk suppression device 100 as described in the above embodiment.

[0035] See Figure 3 The half-bridge circuit 200 includes a first power device T1 and a second power device T2 connected in series; the drive circuit 300 is used to output a first drive signal to the control terminal of the first power device T1 and output a second drive signal to the control terminal of the second power device T2, wherein the first drive signal and the second drive signal are complementary.

[0036] The present invention also proposes a vehicle.

[0037] like Figure 8As shown, the vehicle 2000 includes the drive system 1000 of the above embodiment.

[0038] In summary, the beneficial effects of the crosstalk suppression device, drive system, and vehicle of the present invention are as follows: 1) The present invention uses a hysteresis comparator to process the gate signal in the SiC power device crosstalk suppression device. Compared with the ordinary single-limit comparator, it has stronger anti-interference capability. The crosstalk voltage detection circuit can accurately detect and control the crosstalk voltage of the power device, thereby avoiding the power device from false turn-on or gate negative voltage overvoltage. 2) Compared to methods that increase gate resistance, this invention does not increase additional losses; 3) Compared with active suppression methods, the present invention has a faster response speed and is constantly monitoring-judging-acting, which can suppress not only positive crosstalk voltage but also negative crosstalk voltage.

[0039] It should be understood that various parts of the present invention can be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0040] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0041] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0042] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0043] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0044] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0045] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A crosstalk suppression device (100), characterized by The method comprises the steps of: a switch circuit (10), a first end of the switch circuit (10) is adapted to be connected to a control end of any power device (T) in a half-bridge circuit (200), and a second end of the switch circuit (10) is adapted to be connected to a first ground signal (VEE); a crosstalk voltage detection circuit (20), an input end of the crosstalk voltage detection circuit (10) is adapted to receive a gate-source voltage of the power device (T), an output end of the crosstalk voltage detection circuit (10) is connected to a control end of the switch circuit (10), and the crosstalk voltage detection circuit (10) is used to control the switch circuit (10) to be turned on when it is determined that a crosstalk current flows out of the control end of the power device (T) according to the gate-source voltage, so as to discharge the crosstalk current.

2. The crosstalk suppression device of claim 1, wherein The switch circuit (10) comprises a first switch tube (Q1), a first end of the first switch tube (Q1) is adapted to be connected to the control end of the power device (T), a second end of the first switch tube (Q1) is adapted to be connected to the first ground signal (VEE), and a control end of the first switch tube (Q1) is connected to the output end of the crosstalk voltage detection circuit (10).

3. The crosstalk suppression device of claim 1, wherein The crosstalk voltage detection circuit (20) is specifically used to determine that the crosstalk current flows out of the control end of the power device (T) when the gate-source voltage is greater than or equal to an upper threshold voltage or less than or equal to a lower threshold voltage. The crosstalk voltage detection circuit (20) comprises a hysteresis comparator (21), an XNOR gate, a buffer unit (22) and a switch unit (23); 4. The crosstalk suppression device of claim 3, wherein wherein a first input end of the hysteresis comparator (21) is adapted to receive the gate-source voltage, a second input end of the hysteresis comparator (21) is adapted to be connected to a reference voltage (Vref), an output end of the hysteresis comparator (21) is connected to a first end of the buffer unit (22), a first input end and a second input end of the XNOR gate respectively, a second end of the buffer unit (22) is adapted to be connected to a second ground signal (GND), an output end of the XNOR gate is connected to a control end of the switch unit (23), a first end of the switch unit (23) is adapted to be connected to a first preset power supply (VCC), and a second end of the switch unit (23) is adapted to be connected to the first ground signal (VEE). The hysteresis comparator (21) comprises an operational amplifier (211), a first resistor R1 and a second resistor (R2); 5. The crosstalk suppression device of claim 4, wherein, wherein an inverting input end of the operational amplifier (211) is adapted to receive the gate-source voltage, a non-inverting output end of the operational amplifier (211) is connected to a first end of the first resistor (R1) and a first end of the second resistor (R2) respectively, a second end of the first resistor (R1) is adapted to be connected to the reference voltage (Vref), and a second end of the second resistor (R2) is connected to an output end of the operational amplifier (211) and serves as the output end of the hysteresis comparator (21). ​ 6. The crosstalk suppression device of claim 4, wherein The buffer unit (22) comprises a first capacitor (C1) and a third resistor (R3); The first end of the first capacitor (C1) is connected with the second input end of the XNOR gate and the output end of the hysteresis comparator (21) respectively, the second end of the first capacitor (C1) is adapted to be connected with the second ground signal (GND), and the third resistor (R3) is connected with the first capacitor (C1) in parallel.

7. The crosstalk suppression device of claim 4, wherein The switch unit (23) comprises a second switch tube (Q2) and a third switch tube (Q3); The first end of the second switch tube (Q2) is adapted to be connected with the first preset power supply (VCC), the second end of the second switch tube (Q2) is connected with the first end of the third switch tube (Q3) and the control end of the switch circuit (10) respectively, the second end of the third switch tube (Q3) is adapted to be connected with the first ground signal (VEE), and the control end of the second switch tube (Q2) is connected with the control end of the third switch tube (Q3) and the output end of the XNOR gate respectively.

8. The crosstalk suppression device of claim 4, wherein, The crosstalk voltage detection circuit (20) further comprises a first digital isolator (ISO1) and a second digital isolator (ISO2); wherein, The input end of the first digital isolator (ISO1) is adapted to receive the gate-source voltage, the output end of the first digital isolator (ISO1) is connected with the first input end of the hysteresis comparator (21), the first power supply end of the first digital isolator (ISO1) is adapted to be connected with the first preset power supply (VCC), the second power supply end of the first digital isolator (ISO1) is adapted to be connected with the second preset power supply (VDD), the first ground end of the first digital isolator (ISO1) is adapted to be connected with the third ground signal (GND_HV), and the second ground end of the first digital isolator (ISO1) is adapted to be connected with the second ground signal (GND); The input end of the second digital isolator (ISO2) is connected with the output end of the XNOR gate, the output end of the second digital isolator (ISO1) is connected with the control end of the switch unit (22), the first power supply end of the second digital isolator (ISO2) is adapted to be connected with the first preset power supply (VCC), the second power supply end of the second digital isolator (IS2) is adapted to be connected with the second preset power supply (VDD), the first ground end of the second digital isolator (ISO2) is adapted to be connected with the third ground signal (GND_HV), and the second ground end of the second digital isolator (ISO2) is adapted to be connected with the second ground signal (GND).

9. A drive system (1000), characterized by It comprises: A half-bridge circuit (200) comprising a first power device (T1) and a second power device (T2) connected in series; The crosstalk suppression device (100) according to any one of claims 1-8; and The half-bridge circuit (200) according to claim 9; and A driving circuit (300) is configured to output a first driving signal to a control terminal of the first power device (T1) and output a second driving signal to a control terminal of the second power device (T2), wherein the first driving signal and the second driving signal are complementary.

10. A vehicle (2000) characterized by, The driving system (1000) as claimed in claim 9 is included.

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