Light-emitting panel

Abstract

The invention provides a light emitting panel. The light-emitting panel comprises a light-emitting device and a driving back plate. The light-emitting device comprises a plurality of first bonding structures and first retaining wall structures, the driving backboard comprises a plurality of second bonding structures and a second retaining wall structure; a plurality of first bonding structures of the light-emitting device are in contact with a second retaining wall structure of the driving back plate; or driving a plurality of second bonding structures of the back plate to be in contact with the first retaining wall structure of the light-emitting device.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of light emitting devices, and in particular to a light emitting panel. BACKGROUND

[0002] A light emitting panel is a device capable of emitting light, which is applied in many fields such as signal lights, lighting, display and medical equipment.

[0003] The related art provides a light emitting panel, which comprises a light emitting device and a driving backboard, and the light emitting device and the driving backboard are connected through a bonding structure.

[0004] In the light emitting panel, the bonding structure is prone to alignment deviation when the light emitting device and the driving backboard are bonded, which causes short circuit. SUMMARY

[0005] The embodiments of the present disclosure provide a light emitting panel, which can avoid short circuit of the bonding metal and improve the yield of the light emitting device. The technical solutions are as follows:

[0006] In one aspect, a light emitting panel is provided, which comprises:

[0007] a light emitting device and a driving backboard;

[0008] the light emitting device comprises a plurality of first bonding structures and a first barrier structure;

[0009] the driving backboard comprises a plurality of second bonding structures and a second barrier structure;

[0010] the plurality of first bonding structures of the light emitting device and the second barrier structure of the driving backboard are in contact; or, the plurality of second bonding structures of the driving backboard and the first barrier structure of the light emitting device are in contact.

[0011] Optionally, the first barrier structure has a plurality of second through holes, and the plurality of first bonding structures are respectively located in the plurality of second through holes.

[0012] Optionally, the light emitting device further comprises a first electrode structure and a light emitting surface, and a projection of the first electrode structure on the light emitting surface is located in a projection of the first barrier structure on the light emitting surface.

[0013] Optionally, the second barrier structure has a plurality of third through holes, and the plurality of second bonding structures are respectively located in the plurality of third through holes.

[0014] Optionally, the driving backboard further comprises a wiring, and a projection of the wiring on a surface of the driving backboard is located in a projection of the second barrier structure on the surface of the driving backboard.

[0015] On the other hand, a method for manufacturing a light-emitting panel is provided, the method comprising: providing a light-emitting device, the light-emitting device comprising: a plurality of first bonding connections and a first barrier structure;

[0016] The step of providing a drive backplane, the drive backplane comprising a plurality of second bonding structures and second barrier structures;

[0017] In the step of bonding the light-emitting device and the driving backplate, a plurality of first bonding structures of the light-emitting device contact the second barrier structure of the driving backplate; or, a plurality of second bonding structures of the driving backplate contact the first barrier structure of the light-emitting device.

[0018] Optionally, in the step of providing the light-emitting device, the height of the first barrier structure is less than the height of the first bonding structure.

[0019] Optionally, in the step of providing the light-emitting device, there is a gap between the first barrier structure and each of the plurality of first bonding structures.

[0020] Optionally, in the step of providing the drive backplate, the height of the second retaining wall structure is less than the height of the second bonding structure.

[0021] Optionally, in the step of providing the drive backplate, each of the plurality of second bonding structures has a gap with the second retaining wall structure.

[0022] The beneficial effects of the technical solutions provided in this disclosure are:

[0023] In this embodiment, due to the deformation of the bonding structure during the bonding process, adjacent bonding structures can easily make contact and connect. The light-emitting device is provided with multiple first barrier structures, and the driving backplate is provided with second barrier structures. The light-emitting device and the driving backplate are combined together through the bonding structures, so that the multiple first bonding structures of the light-emitting device and the second barrier structures of the driving backplate are in contact; or, the multiple second bonding structures of the driving backplate and the first barrier structures of the light-emitting device are in contact. The presence of the barrier structures separates the various bonding structures, avoiding the problem of short circuits between bonding structures caused by deformation and flow of the bonding structures.

[0024] Furthermore, in the case of bond misalignment, the bonding area of ​​the bonding structure provided by related technologies decreases, leading to a drop in bond strength. However, increasing the area of ​​the bonding structure can easily cause short circuits. The embodiments of this disclosure enhance bond strength through a retaining wall design without increasing the area of ​​the bonding structure; simultaneously, they provide support for the extension of the gaps between the bonding structures, eliminating the need for subsequent additional glue filling of the grooves and ensuring the yield of the light-emitting device. Attached Figure Description

[0025] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure;

[0027] Figure 2 This is a top view of the relationship between the various film layers in a light-emitting device provided in this embodiment of the present disclosure;

[0028] Figure 3 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this disclosure;

[0029] Figure 4 This is a top view of the relationship between the various film layers in a drive backplate provided in an embodiment of this disclosure;

[0030] Figure 5 This is a schematic diagram of the structure of a drive backplane provided in an embodiment of this disclosure;

[0031] Figure 6 This is a flowchart of a method for preparing a light-emitting panel according to an embodiment of the present disclosure;

[0032] Figure 7 This is a flowchart of a method for fabricating a light-emitting device according to an embodiment of this disclosure;

[0033] Figure 8 This is a flowchart of a method for fabricating a light-emitting device according to an embodiment of this disclosure;

[0034] Figure 9 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0035] Figure 10 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0036] Figure 11 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0037] Figure 12 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0038] Figure 13 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0039] Figure 14 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0040] Figure 15 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0041] Figure 16 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0042] Figure 17 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0043] Figure 18 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0044] Figure 19 This is a cross-sectional view of the fabrication process of a light-emitting device provided in this embodiment of the disclosure;

[0045] Figure 20 This is a flowchart of a method for preparing a light-emitting panel according to an embodiment of the present disclosure;

[0046] Figure 21 This is a top view of a drive backplate fabrication process provided in an embodiment of this disclosure;

[0047] Figure 22 This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure;

[0048] Figure 23 This is a top view of a drive backplate fabrication process provided in an embodiment of this disclosure;

[0049] Figure 24 This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure;

[0050] Figure 25 This is a top view of a drive backplate fabrication process provided in an embodiment of this disclosure;

[0051] Figure 26 This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure.

[0052] The attached figures are labeled as follows:

[0053] 10: Epitaxial structure; 20: First passivation layer; 30: First electrode structure; 40: First bonding structure; 50: First barrier structure; 11: Epitaxial unit; 60: Second passivation layer; 70: Transparent conductive layer; 80: First connecting electrode; 90: Second connecting electrode;

[0054] 100: Substrate;

[0055] 500: Fluorescent layer;

[0056] 1001: First groove; 1002: Second groove;

[0057] 201: Passivation layer via;

[0058] 2001: First through hole; 2002: Second through hole; 2003: Third through hole;

[0059] 300: Drive backplate; 400: Light-emitting device

[0060] 310: Circuit board; 320: Circuit board electrode; 330: Circuit board passivation layer; 340: Second bonding structure; 350: Second barrier structure; 360: Trace; 331: Fourth through hole. Detailed Implementation

[0061] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0062] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting panel includes a light-emitting device 400 and a driving backplate 300.

[0063] The light-emitting device 400 includes: a plurality of first bonding structures 40 and a first barrier structure 50.

[0064] The drive backplane 300 includes: multiple second bonding structures 340 and second retaining wall structures 350.

[0065] The plurality of first bonding structures 40 of the light-emitting device 400 and the second barrier structure 350 of the driving backplate 300 are in contact; or, the plurality of second bonding structures 340 of the driving backplate 300 and the first barrier structure 50 of the light-emitting device 400 are in contact.

[0066] In this embodiment, due to the deformation of the bonding structure during the bonding process, adjacent bonding structures can easily make contact and connect. The light-emitting device is provided with multiple first barrier structures, and the driving backplate is provided with second barrier structures. The light-emitting device and the driving backplate are combined together through the bonding structures, so that the multiple first bonding structures of the light-emitting device and the second barrier structures of the driving backplate are in contact; or, the multiple second bonding structures of the driving backplate and the first barrier structures of the light-emitting device are in contact. The presence of the barrier structures separates the various bonding structures, avoiding the problem of short circuits between bonding structures caused by deformation and flow of the bonding structures.

[0067] Furthermore, in the case of bond misalignment, the bonding area of ​​the bonding structure provided by related technologies decreases, leading to a drop in bond strength. However, increasing the area of ​​the bonding structure can easily cause short circuits. The embodiments of this disclosure enhance bond strength through a retaining wall design without increasing the area of ​​the bonding structure; simultaneously, they provide support for the extension of the gaps between the bonding structures, eliminating the need for subsequent additional glue filling of the grooves and ensuring the yield of the light-emitting device.

[0068] In this embodiment of the disclosure, the first retaining wall structure 50 has a plurality of second through holes 2002, and a plurality of first bonding structures 40 are respectively located in the plurality of second through holes 2002.

[0069] In this implementation, the first retaining wall structure has multiple second through holes, and multiple first bonding structures are located in the multiple second through holes respectively. Since the first bonding structure undergoes deformation during the bonding process, adjacent first bonding structures are easily contacted and connected. The presence of the first retaining wall structure separates each bonding structure, avoiding the problem of short circuit between the first bonding structures caused by deformation and flow of the first bonding structure.

[0070] In this embodiment of the disclosure, the light-emitting device 400 further includes a first electrode structure 30 and a light-emitting surface, wherein the projection of the first electrode structure 30 on the light-emitting surface is located within the projection of the first barrier structure 50 on the light-emitting surface.

[0071] In this implementation, the projection of the first electrode structure onto the light-emitting surface is located within the projection of the first barrier structure onto the light-emitting surface. The first barrier structure can cover the first electrode structure, thus preventing a short circuit between the first electrode structure and the first bonding structure.

[0072] In this embodiment of the disclosure, the light-emitting surface is the side of the light-emitting device 400 that is away from the driving backplate 300.

[0073] In this embodiment of the disclosure, the second barrier structure 350 has a plurality of third through holes 2003, and a plurality of second bonding structures 340 are respectively located in the plurality of third through holes 2003.

[0074] In this implementation, the second barrier structure has multiple third through holes, and multiple second bonding structures are located in the multiple third through holes. Since the second bonding structure undergoes deformation during the bonding process, adjacent second bonding structures are easily in contact and connected. The presence of the second barrier structure separates each bonding structure, avoiding the problem of short circuit between the second bonding structures caused by deformation and flow of the second bonding structure.

[0075] In this embodiment of the disclosure, the drive backplate 300 further includes a trace 360, the projection of the trace 360 ​​on the surface of the drive backplate 300 being located within the projection of the second retaining wall structure 350 on the surface of the drive backplate 300.

[0076] In this implementation, the projection of the trace on the surface of the drive backplane is located within the projection of the second baffle structure on the surface of the drive backplane. The second baffle structure can cover the trace, thus preventing short circuits between the trace and the second bonding structure.

[0077] Figure 2 This is a top view of the relationship between the various film layers in a light-emitting device provided in this embodiment. Figure 3 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this disclosure. See also... Figure 2 and Figure 3 , Figure 3 yes Figure 2 The cross section at a-a' Figure 2 Only a portion of the film layers are shown; this is not a top-down view of all film layers. Figure 2 The middle part of the structure is only shown in positional relationship, and its specific size is not limited. For example, the second groove 1002 is represented by lines and its specific width is not shown. The light-emitting device includes: an epitaxial structure 10, a first electrode structure 30, a plurality of first bonding structures 40 and a first barrier structure 50.

[0078] The first electrode structure 30 and a plurality of first bonding structures 40 are respectively connected to the epitaxial structure 10, and the first electrode structure 30 has a plurality of first through holes 2001.

[0079] The first barrier structure 50 covers the first electrode structure 30. The first barrier structure 50 has a plurality of second through holes 2002. The plurality of second through holes 2002 are respectively located in a plurality of first through holes 2001. The plurality of first bonding structures 40 are respectively located in a plurality of second through holes 2002.

[0080] In this embodiment, the epitaxial structure has a mesh-like first groove, and the bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by a second isolation groove. A first electrode structure is connected to the epitaxial structure, that is, the first electrode structure is the common electrode of the multiple epitaxial units. Multiple first bonding structures are electrically connected to the surfaces of the multiple epitaxial units respectively, that is, the multiple first bonding structures are the independent electrodes of the multiple epitaxial units.

[0081] The first baffle structure covers the first electrode structure, thus preventing short circuits between the first electrode structure and the first bonding structure. The first baffle structure has multiple second through holes, and multiple first bonding structures are located in the multiple second through holes. Due to the deformation of the first bonding structure during the bonding process, adjacent bonding structures are prone to contact and communication. However, the presence of the first baffle structure separates the various bonding structures, avoiding the problem of short circuits between the first bonding structures caused by deformation and flow of the first bonding structures.

[0082] Furthermore, in the case of bond misalignment, the bonding area of ​​the first bonding structure provided by the related technology decreases, leading to a decline in bond strength. However, increasing the area of ​​the first bonding structure can easily cause short circuits. The embodiments of this disclosure enhance bond strength through a barrier design without increasing the area of ​​the first bonding structure; simultaneously, they provide support for the extension of the gaps between the first bonding structures, eliminating the need for subsequent additional glue filling of the grooves and ensuring the yield of the light-emitting device.

[0083] In this embodiment of the present disclosure, the light-emitting device further includes a first passivation layer 20.

[0084] The epitaxial structure 10 has a mesh-like first groove 1001, and a mesh-like second groove 1002 at the bottom of the mesh-like first groove 1001. The epitaxial structure 10 is divided into multiple epitaxial units 11 by the second groove 1002. A first passivation layer 20 covers the multiple epitaxial units 11 and the second groove 1002. A first electrode structure 30 is located on the first passivation layer 20 and passes through the first passivation layer 20 to be electrically connected to the first groove 1001 of the multiple epitaxial units 11 respectively. Multiple first bonding structures 40 are located on the first passivation layer 20 and pass through the first passivation layer 20 to be electrically connected to the surface of the multiple epitaxial units 11 respectively. A first barrier structure 50 is located on the first passivation layer 20.

[0085] In this implementation, the epitaxial structure has a mesh-like first groove, and the bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by a second isolation groove. A first electrode structure is connected to the epitaxial structure, that is, the first electrode structure is the common electrode of multiple epitaxial units. Multiple bonding structures are electrically connected to the surfaces of multiple epitaxial units respectively, that is, multiple first bonding structures are independent electrodes of multiple epitaxial units. The first passivation layer can prevent short circuits between epitaxial units.

[0086] In this embodiment of the present disclosure, the height of the first barrier structure 50 is less than the height of the first bonding structure 40 in a direction perpendicular to the surface of the epitaxial structure 10.

[0087] In this implementation, the first bonding structure deforms during the bonding process, decreasing in height and increasing in width, meaning it extends to both sides. Since the surface height of the first retaining wall structure is less than that of the first bonding structure, their heights become roughly equal after the first bonding structure deforms, thus meeting the bonding requirements and improving bonding strength.

[0088] In this embodiment of the present disclosure, in the direction perpendicular to the surface of the epitaxial structure 10, the height of the first bonding structure 40 is 2 to 10 μm, and the height difference between the first barrier structure 50 and the first bonding structure 40 is 1 to 3 μm.

[0089] In this implementation, the height of the first bonding structure is 2 to 10 μm, which can form a thinner bonding layer, achieve higher integration and smaller bonding spacing, thereby improving the packaging density of the light-emitting device; the height difference between the first barrier structure and the first bonding structure is 1 to 3 μm, and the above height difference can make the height of the bonding structure after deformation exactly the same as the height of the first barrier structure.

[0090] For example, the height of the first bonding structure 40 is 6 μm, and the height of the first barrier structure 50 is 4 μm.

[0091] In this embodiment of the present disclosure, the distance between the first bonding structure 40 and the first barrier structure 50 in a direction perpendicular to the surface of the epitaxial structure 10 can be 1 to 3 μm.

[0092] In this implementation, the distance between the first bonding structure and the first retaining wall structure is 1 to 3 μm, which can reserve space for the lateral expansion of the first bonding structure.

[0093] For example, the distance between the first bonding structure 40 and the first barrier structure 50 is 2 μm.

[0094] In this embodiment of the disclosure, the first bonding structure 40 may be a Cr layer, a Ti layer, a Ni layer, an Al layer, a Pt layer, an Au layer, or a Sn layer.

[0095] It can be an alloy layer composed of any combination of Cr, Ti, Ni, Al, Pt, Au and Sn layers.

[0096] For example, the first bonding structure 40 is an alloy layer composed of a Ti layer, a Pt layer, an Au layer and a Sn layer.

[0097] For example, the thickness of the Ti layer is 100 angstroms, the thickness of the Pt layer is 1500 angstroms, the thickness of the Au layer is 5000 angstroms, and the thickness of the Sn layer is 60000 angstroms.

[0098] In this embodiment of the disclosure, the first barrier structure 50 can be a bonding adhesive barrier.

[0099] In this embodiment of the disclosure, the epitaxial structure 10 includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially, with the bottom surface of the first groove 1001 located on the first semiconductor layer.

[0100] In this embodiment of the disclosure, the light-emitting device may further include: a substrate 100, wherein a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on the substrate 100.

[0101] For example, the bottom surface of the second groove 1002 can also completely penetrate the first semiconductor layer, and the bottom surface of the second groove 1002 is located on the substrate 100.

[0102] In this embodiment of the disclosure, the first semiconductor layer may be an N-type semiconductor layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0103] For example, the first semiconductor layer can be an N-type GaN layer, and the second semiconductor layer can be a P-type GaN layer.

[0104] In other embodiments, the first semiconductor layer may be a P-type semiconductor layer and the second semiconductor layer may be an N-type semiconductor layer.

[0105] In this embodiment of the disclosure, the active layer can be a multi-quantum well layer, for example, the multi-quantum well layer can be an InGaN / GaN multi-quantum well structure.

[0106] In this embodiment of the disclosure, the first passivation layer 20 may be a SiO2 passivation layer.

[0107] In another example, the first passivation layer 20 can also be a distributed Bragg reflector (DBR) layer.

[0108] In this embodiment of the disclosure, the thickness of the first passivation layer 20 can be 2000 to 12000 angstroms.

[0109] For example, the thickness of the first passivation layer 20 is 2400 angstroms.

[0110] The first passivation layer 20 includes a passivation layer via 201, a portion of which is disposed on the surface of the second semiconductor layer, and another portion of which is disposed at the first groove 1001.

[0111] The first groove 1001 is mesh-like, and multiple passivation layer through holes 201 can be set at the intersections of the mesh.

[0112] The first electrode structure 30 passes through the passivation layer via 201 at the first groove 1001 and is connected to the first semiconductor layer; the first bonding structure 40 passes through the passivation layer via 201 disposed on the surface of the second semiconductor layer and is connected to the second semiconductor layer.

[0113] In this embodiment of the disclosure, the first electrode structure 30 can be an electrode composed of a stack of Cr, Pt and Au.

[0114] In the embodiments disclosed herein, the thickness of Cr can be 40–60 angstroms, the thickness of Pt can be 900–1100 angstroms, and the thickness of Au can be 2900–3100 angstroms.

[0115] For example, the thickness of Cr can be 50 angstroms, the thickness of Pt can be 1000 angstroms, and the thickness of Au can be 3000 angstroms.

[0116] In this embodiment of the disclosure, the light-emitting device may further include a transparent conductive layer.

[0117] The transparent conductive layer includes multiple transparent conductive units, which are respectively located on the second semiconductor layer of multiple epitaxial units. The first bonding structure 40 is electrically connected to the transparent conductive units.

[0118] In this embodiment of the disclosure, the transparent conductive layer can be an indium tin oxide (ITO) layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0119] In this embodiment of the disclosure, the distance between the edge of the transparent conductive unit and the opening of the first groove can be 2 to 4 μm.

[0120] For example, the distance between the edge of the transparent conductive unit and the opening of the first groove is 3 μm.

[0121] In this embodiment of the present disclosure, the light-emitting device further includes a second passivation layer 60, a transparent conductive layer 70, and a second connecting electrode 90.

[0122] In this structure, a transparent conductive layer 70 is on the surface of the epitaxial structure 10, a first passivation layer 20 covers the transparent conductive layer 70, a first connecting electrode 80 is located on the surface of the first passivation layer 20 and passes through the first passivation layer 20 and is connected to the transparent conductive layer 70, a second passivation layer 60 covers the first connecting electrode 80 and the first electrode structure 30, a first bonding structure 40 is located on the surface of the second passivation layer 60, a second connecting electrode 90 passes through the second passivation layer 60 and is connected to the first connecting electrode 80, and the first bonding structure 40 is connected to the second connecting electrode 90.

[0123] Figure 4 This is a top view of the relationship between the various film layers in a drive backplate provided in an embodiment of this disclosure. Figure 5 This is a schematic diagram of a drive backplane provided in an embodiment of this disclosure. See also... Figure 4 and Figure 5 , Figure 5 yes Figure 4 The cross section at B-B' includes a circuit board 310, multiple circuit board electrodes 320, multiple second bonding structures 340, and a second retaining wall structure 350.

[0124] Multiple circuit board electrodes 320 are respectively connected to circuit board 310, multiple second bonding structures 340 are located on multiple circuit board electrodes 320, and a second barrier structure 350 is located on circuit board 310.

[0125] The second retaining wall structure 350 has multiple third through holes 2003, and multiple second bonding structures 340 are respectively located in the multiple third through holes 2003.

[0126] In this implementation, the light-emitting device is connected to the second bonding structure through a bonding structure to form electrical conduction. The second bonding structure deforms during the bonding process, and adjacent second bonding structures can easily make contact and connect. The presence of the second barrier structure separates each second bonding structure, avoiding short circuit problems caused by deformation and flow of the second bonding structure.

[0127] In this embodiment of the disclosure, the drive backplane 300 may further include: a circuit board passivation layer 330.

[0128] The circuit board passivation layer 330 is located on the circuit board 310, and multiple circuit board electrodes 320 pass through the circuit board passivation layer 330 and are connected to the circuit board 310. Multiple second bonding structures 340 are located on the multiple circuit board electrodes 320, and a second barrier structure 350 is located on the circuit board passivation layer 330.

[0129] In this implementation, the circuit board passivation layer can protect the circuit board from external environmental corrosion.

[0130] like Figure 5 As shown, the circuit board electrode 320 has an under bump metallization (UBM) structure, and the circuit board electrode 320 is connected to the circuit board 310 through the fourth via 331 of the circuit board passivation layer 330.

[0131] Among them, circuit board 310 can be a complementary metal oxide semiconductor (COMS) driver board.

[0132] In this embodiment of the disclosure, the plurality of circuit board electrodes 320 can be a stack of Ti, Pt and Au layers.

[0133] The Ti layer has a thickness of 100 angstroms, the Pt layer has a thickness of 1500 angstroms, and the Au layer has a thickness of 5000 angstroms.

[0134] In this embodiment of the disclosure, the passivation layer 330 of the circuit board can be a stack of SiO2 and SiN.

[0135] In this embodiment of the disclosure, in a direction perpendicular to the surface of the circuit board 310, the height of the second barrier structure 350 is less than the height of the second bonding structure 340, and the height difference between the second barrier structure 350 and the second bonding structure 340 is 1 to 3 μm.

[0136] In this implementation, the height difference between the second retaining wall structure and the second bonding structure is 1 to 3 μm. This height difference ensures that the height of the second bonding structure after deformation is exactly the same as the height of the second retaining wall structure.

[0137] For example, the height difference between the second retaining wall structure 350 and the second bonding structure 340 is 2 μm.

[0138] In this embodiment of the disclosure, the distance between the second bonding structure 340 and the second barrier structure 350 in a direction parallel to the surface of the circuit board 310 is 1 to 3 μm.

[0139] In this implementation, the distance between the second bonding structure and the second retaining wall structure is 1 to 3 μm, which can reserve space for the lateral expansion of the second bonding structure.

[0140] For example, the distance between the second bonding structure 340 and the second barrier structure 350 is 2 μm.

[0141] like Figure 5 As shown, the drive backplane may also include wiring 360, which is covered by the second retaining wall structure 350, and the wiring 360 may be in the form of a mesh.

[0142] The trace 360 ​​is used to connect the first electrode structure 30 of the light-emitting device, thereby reducing the resistance of the first electrode structure 30.

[0143] The trace 360 ​​and the first electrode structure 30 can be bonded at the edge, or multiple holes can be opened at corresponding positions of the first barrier structure 50 and the second barrier structure 350 to achieve multi-point bonding.

[0144] See you again Figure 1 The light-emitting panel includes: a fluorescent layer 500.

[0145] The first bonding structure 40 is bonded to the second bonding structure 340, and the first retaining wall structure 50 is connected to the second retaining wall structure 350.

[0146] The fluorescent layer 500 is located on the side of the epitaxial structure 10 away from the driving backplate 300.

[0147] In this implementation, the driving backplane can transmit current to power the light-emitting device and can also transmit signals with the light-emitting device; during the bonding process between the bonding structure and the second bonding structure, it expands laterally, fills the through holes, and improves the bonding strength; the phosphor layer can change the emitted color of the light-emitting device and can also provide protection for the light-emitting device.

[0148] It should be noted that the first electrode structure 30 in the light-emitting device 400 is not directly bonded to the driving backplate 300. Instead, it is connected to the first electrode structure 30 via a connecting wire at one end and bonded to the driving backplate 300 at the other end. The connecting wire can be a flexible printed circuit (FPC).

[0149] In this embodiment of the disclosure, the area of ​​the contact surface of the first bonding structure 40 is smaller than the area of ​​the contact surface of the second bonding structure 340.

[0150] In this implementation, the area of ​​the contact surface of the first bonding structure 40 is smaller than the area of ​​the contact surface of the second bonding structure 340, which can ensure the strength of the light-emitting device bonded to the driving backplate.

[0151] In this embodiment, the first barrier structure 50 and the second barrier structure 350 fill the gap between the bonding structure 40 and the second bonding structure 340.

[0152] In this implementation, the barrier structure and the second barrier structure fill the gap between the bonding structure and the second bonding structure, which can prevent short circuits in the bonding structure, improve the structural strength of the light-emitting panel, and improve the yield of the light-emitting diode.

[0153] In this embodiment of the disclosure, the fluorescent layer 500 can be a blue-to-white phosphor layer.

[0154] In the embodiments of this disclosure, the particle size of the phosphor can be 2 to 10 μm.

[0155] For example, the phosphor has a particle size of 5 μm.

[0156] In this embodiment, the thickness of the fluorescent layer can be 10–100 μm.

[0157] For example, the thickness of the fluorescent layer is 20 μm.

[0158] In this embodiment of the present disclosure, a silicone ring is provided on the edge of the side of the extension structure 10 away from the drive backplate 30.

[0159] The fluorescent layer 500 is located within the silicone, and the thickness of the fluorescent layer 500 does not exceed the height of the silicone.

[0160] In this implementation, the fluorescent layer is no higher than the height of the silicone, which is beneficial for the propagation of light and reduces the scattering and reflection loss of light during transmission, thereby improving the light efficiency.

[0161] In this embodiment of the disclosure, the silicone can be a semiconductor encapsulation adhesive layer such as polydimethylsiloxane (PDMS) or electronic silicone rubber.

[0162] For example, the silicone is a PDMS layer.

[0163] In this embodiment of the disclosure, the width of the silicone can be 40 to 60 μm.

[0164] For example, the width of the silicone can be 50 μm.

[0165] In this embodiment of the disclosure, the height of the silicone can be 10 to 100 μm.

[0166] For example, the height of the silicone can be 20 μm.

[0167] Figure 6 This is a flowchart illustrating a method for fabricating a light-emitting panel according to an embodiment of this disclosure. See also... Figure 6 The method includes the following steps:

[0168] S1: Step of providing a light-emitting device, the light-emitting device comprising: a plurality of first bonding links and a first barrier structure.

[0169] S2: Step of providing a drive backplane, the drive backplane including multiple second bonding structures and second retaining wall structures.

[0170] S3: The step of bonding the light-emitting device and the driving backplate, wherein a plurality of first bonding structures of the light-emitting device and a second barrier structure of the driving backplate come into contact; or, a plurality of second bonding structures of the driving backplate come into contact with a first barrier structure of the light-emitting device.

[0171] In this embodiment, due to the deformation of the bonding structure during the bonding process, adjacent bonding structures can easily make contact and connect. The light-emitting device is provided with multiple first barrier structures, and the driving backplate is provided with second barrier structures. The light-emitting device and the driving backplate are combined together through the bonding structures, so that the multiple first bonding structures of the light-emitting device and the second barrier structures of the driving backplate are in contact; or, the multiple second bonding structures of the driving backplate and the first barrier structures of the light-emitting device are in contact. The presence of the barrier structures separates the various bonding structures, avoiding the problem of short circuits between bonding structures caused by deformation and flow of the bonding structures.

[0172] Furthermore, in the case of bond misalignment, the bonding area of ​​the bonding structure provided by related technologies decreases, leading to a drop in bond strength. However, increasing the area of ​​the bonding structure can easily cause short circuits. The embodiments of this disclosure enhance bond strength through a retaining wall design without increasing the area of ​​the bonding structure; simultaneously, they provide support for the extension of the gaps between the bonding structures, eliminating the need for subsequent additional glue filling of the grooves and ensuring the yield of the light-emitting device.

[0173] Figure 7This is a flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of this disclosure. See also... Figure 7 The method includes the following steps:

[0174] S11. Fabricate an epitaxial structure. The epitaxial structure has a mesh-like first groove, and the bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by the second groove.

[0175] S12. Fabricate a first passivation layer, which covers multiple epitaxial cells and a second groove.

[0176] S13. Fabricate a first electrode structure. The first electrode structure is located on the first passivation layer and passes through the first passivation layer to be electrically connected to the first grooves of multiple epitaxial units respectively. The first electrode structure has multiple first through holes.

[0177] S14. Fabricate multiple first bonding structures, which are located on the first passivation layer and pass through the first passivation layer to be electrically connected to the surface of multiple epitaxial units respectively, and the multiple first bonding structures are located in multiple first vias respectively.

[0178] S15. Fabricate a first barrier structure, the first barrier structure is located on the first passivation layer and covers the first electrode structure, the first barrier structure has multiple second through holes, and multiple first bonding structures are respectively located in the multiple second through holes.

[0179] In this embodiment, the epitaxial structure has a mesh-like first groove, and the bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by a second isolation groove. A first electrode structure is located on a first passivation layer and passes through the first passivation layer to be electrically connected to multiple epitaxial units at the first groove, that is, the first electrode structure is the common electrode of multiple epitaxial units. Multiple first bonding structures are located on a first passivation layer and pass through the first passivation layer to be electrically connected to the surface of multiple epitaxial units, that is, the multiple first bonding structures are independent electrodes of multiple epitaxial units.

[0180] The first baffle structure is located on the first passivation layer and covers the first electrode structure, thus preventing short circuits between the first electrode structure and the first bonding structure. The first baffle structure has multiple second through-holes, and multiple first bonding structures are located within these second through-holes. Because the first bonding structures deform during the bonding process, adjacent first bonding structures can easily contact and connect. However, the presence of the first baffle structure separates the individual first bonding structures, preventing short circuits between them caused by deformation and flow of the first bonding structures.

[0181] Furthermore, in the case of bond misalignment, the bonding area of ​​the bonding structure provided by related technologies decreases, leading to a drop in bond strength. However, increasing the area of ​​the bonding structure can easily cause short circuits. The embodiments of this disclosure enhance bond strength through a barrier design without increasing the area of ​​the first bonding structure; simultaneously, they provide support for the extension of the gaps between the first bonding structures, eliminating the need for subsequent additional glue filling of the grooves and ensuring the yield of the light-emitting device.

[0182] Figure 8 This is a flowchart illustrating a method for fabricating a light-emitting device according to an embodiment of this disclosure. See also... Figure 8 The method includes the following steps:

[0183] S21. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a substrate, and the second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0184] The substrate can be any one of the following: a patterned sapphire substrate, a Si substrate, or a SiC substrate.

[0185] In one example, step S21 includes:

[0186] The first step is to fabricate the first semiconductor layer.

[0187] In this embodiment of the disclosure, the first semiconductor layer is an N-type GaN layer.

[0188] The second step is to create the active layer.

[0189] In this embodiment of the disclosure, the active layer is a multi-quantum well layer, for example, the multi-quantum well layer can be an InGaN / GaN multi-quantum well structure.

[0190] The third step is to fabricate the second semiconductor layer.

[0191] In this embodiment of the disclosure, the second semiconductor layer is a P-type GaN layer.

[0192] In this embodiment of the present disclosure, a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate.

[0193] S22. The epitaxial structure is patterned to form a mesh-like first groove. The bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by the second groove.

[0194] In this embodiment of the disclosure, the epitaxial structure is patterned by inductively coupled plasma (ICP) etching to form the first groove and the second groove.

[0195] In this embodiment of the disclosure, the depth of the second groove can be 1.2 to 2.5 μm.

[0196] For example, the depth of the second groove is 2 μm.

[0197] Figure 9 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the present disclosure. Figure 10 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 9 and Figure 10 The epitaxial structure 10 has a mesh-like first groove 1001. Through the division of the first groove 1001, the epitaxial structure 10 forms multiple epitaxial units 11, which are rounded squares in the figure. The surface of these epitaxial units 11 is a second semiconductor layer, while the bottom surface of the first groove 1001 is a first semiconductor layer. The bottom of the first groove 1001 has a mesh-like second groove 1002. The bottom surface of the second groove 1002 is the first semiconductor layer, and the second groove 1002 is deeper than the first groove 1001.

[0198] Optionally, after step S22, the method may further include:

[0199] A transparent conductive layer is fabricated on the surface of the epitaxial structure. The transparent conductive layer includes multiple transparent conductive units, which are located on multiple epitaxial units.

[0200] In one example, fabricating a transparent conductive layer includes:

[0201] The first step is to fabricate a transparent conductive film on the surface of the epitaxial structure.

[0202] The second step is to pattern the transparent conductive film to form a transparent conductive layer.

[0203] In this embodiment, the transparent conductive layer can be an ITO layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0204] In this embodiment of the disclosure, the distance between the edge of the transparent conductive unit and the opening of the first groove can be 2 to 4 μm.

[0205] For example, the distance between the edge of the transparent conductive unit and the opening of the first groove is 3 μm.

[0206] The third step is to anneal the transparent conductive layer.

[0207] Figure 11 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 11The transparent conductive layer 70 is located on multiple epitaxial units 11. It is worth noting that the transparent conductive layer 70 is not shown in any of the top view structural diagrams.

[0208] S23. A first passivation layer is fabricated on the epitaxial structure, the first passivation layer covering a plurality of first grooves and a plurality of second grooves.

[0209] In one example, step 23 includes:

[0210] The first step is to create the first passivation layer.

[0211] In this embodiment of the disclosure, the first passivation layer is fabricated using plasma-enhanced chemical vapor deposition (PECVD).

[0212] In this embodiment of the disclosure, the first passivation layer may be a SiO2 passivation layer.

[0213] In another example, the first passivation layer can also be a DBR layer.

[0214] In this embodiment of the disclosure, the thickness of the first passivation layer can be 2000 to 12000 angstroms.

[0215] For example, the thickness of the first passivation layer is 2400 angstroms.

[0216] The second step is to pattern the first passivation layer to form passivation layer vias.

[0217] Figure 12 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the present disclosure. Figure 13 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 12 and Figure 13 The first passivation layer 20 is a full-film layer, covering multiple first grooves 1001 and multiple second grooves 1002. The first passivation layer 20 includes passivation layer vias 201, a portion of which is disposed on the surface of the second semiconductor layer, and another portion of which is disposed at the first groove 1001.

[0218] S24. Fabricate a first electrode structure and a connecting electrode. The first electrode structure is located on the first passivation layer and passes through the first passivation layer to be electrically connected to the first grooves of multiple epitaxial units respectively. The first electrode structure has multiple first through holes. The first connecting electrode passes through the first passivation layer and is connected to the transparent conductive layer.

[0219] In this embodiment of the disclosure, the first electrode structure can be an electrode composed of a stack of Cr, Pt and Au.

[0220] In this embodiment of the disclosure, the first connecting electrode may be an electrode composed of a stack of Cr, Pt and Au.

[0221] In the embodiments disclosed herein, the thickness of Cr can be 40–60 angstroms, the thickness of Pt can be 900–1100 angstroms, and the thickness of Au can be 2900–3100 angstroms.

[0222] For example, the thickness of Cr can be 50 angstroms, the thickness of Pt can be 1000 angstroms, and the thickness of Au can be 3000 angstroms.

[0223] Figure 14 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the present disclosure. Figure 15 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 14 and Figure 15 The first electrode structure 30 is located on the first passivation layer 20 and is correspondingly disposed at the first groove 1001. The first electrode structure 30 is electrically connected to multiple epitaxial units 11 through multiple passivation layer vias 201 disposed at the first groove 1001. The first electrode structure 30 has multiple first vias 2001. This step also forms a first connecting electrode 80, which is connected to the transparent conductive layer 70 through the passivation layer vias 201.

[0224] S25. Fabricate a second passivation layer on the first passivation layer.

[0225] In one example, step 25 includes:

[0226] The first step is to create the second passivation layer.

[0227] In this embodiment of the disclosure, the second passivation layer is fabricated using PECVD.

[0228] In this embodiment of the disclosure, the second passivation layer may be a SiO2 passivation layer.

[0229] In another example, the second passivation layer can also be a DBR layer.

[0230] The second step is to pattern the second passivation layer to form passivation layer vias.

[0231] Figure 16 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 16 The second passivation layer 60 is a full-film layer that covers the first electrode structure 30, the first connecting electrode 80 and the first passivation layer 20. The second passivation layer 60 has a passivation layer via 201.

[0232] S26. Fabricate a second connecting electrode, which is located on the second passivation layer and passes through the second passivation layer to connect with the first connecting electrode.

[0233] In this embodiment of the disclosure, the second connecting electrode may be an electrode composed of a stack of Cr, Pt and Au.

[0234] Figure 17 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 17 The second connecting electrode 90 is located on the second passivation layer 60, and the second connecting electrode 90 is connected to the first connecting electrode 80 through the passivation layer through hole 201.

[0235] S27. Fabricate multiple first bonding structures, which are located on the second passivation layer and connected to the second connecting electrode.

[0236] In this embodiment of the disclosure, the height of the first bonding structure can be 2 to 10 μm.

[0237] For example, the height of the first bonding structure is 6 μm.

[0238] In the embodiments disclosed herein, the first bonding structure may be a Cr layer, a Ti layer, a Ni layer, an Al layer, a Pt layer, an Au layer, or a Sn layer.

[0239] It can be an alloy layer composed of any combination of Cr, Ti, Ni, Al, Pt, Au and Sn layers.

[0240] For example, the first bonding structure is an alloy layer composed of a Ti layer, a Pt layer, an Au layer and a Sn layer.

[0241] For example, the thickness of the Ti layer is 100 angstroms, the thickness of the Pt layer is 1500 angstroms, the thickness of the Au layer is 5000 angstroms, and the thickness of the Sn layer is 60000 angstroms.

[0242] Figure 18 This is a top view of the fabrication process of a light-emitting device provided in this embodiment of the present disclosure. Figure 19 This is a cross-sectional view showing the fabrication process of a light-emitting device according to an embodiment of this disclosure. See also... Figure 18 and Figure 19 Multiple first bonding structures 40 are located on the second passivation layer 60, and the multiple first bonding structures 40 are electrically connected to the second connecting electrode 90. The multiple first bonding structures 40 are respectively located in multiple first vias 2001.

[0243] S28. Fabricate a first retaining wall structure. The first retaining wall structure is located on the second passivation layer. The first retaining wall structure has multiple second through holes, and multiple first bonding structures are respectively located in the multiple second through holes.

[0244] After this step is completed, structural reference. Figure 3 .

[0245] In this embodiment of the disclosure, the height of the first barrier structure is less than the height of the first bonding structure in a direction perpendicular to the surface of the epitaxial structure.

[0246] In this implementation, the first bonding structure deforms during the bonding process, decreasing in height and increasing in width, meaning it extends to both sides. Since the surface height of the first retaining wall structure is less than that of the first bonding structure, their heights become roughly equal after the first bonding structure deforms, thus meeting the bonding requirements and improving bonding strength.

[0247] In this embodiment of the present disclosure, in the direction perpendicular to the surface of the epitaxial structure, the height of the first bonding structure is 2 to 10 μm, and the height difference between the first barrier structure and the first bonding structure is 1 to 3 μm.

[0248] In this implementation, the height of the first bonding structure is 2 to 10 μm, which can form a thinner bonding layer, achieve higher integration and smaller bonding spacing, thereby improving the packaging density of the light-emitting device; the height difference between the first barrier structure and the first bonding structure is 1 to 3 μm, and the above height difference can make the height of the first bonding structure after deformation exactly the same as the height of the first barrier structure.

[0249] For example, the height of the first bonding structure is 6 μm and the height of the first barrier structure is 4 μm.

[0250] In this embodiment of the present disclosure, the distance between the first bonding structure and the first barrier structure can be 1 to 3 μm in a direction perpendicular to the surface of the epitaxial structure.

[0251] In this implementation, the distance between the first bonding structure and the first retaining wall structure is 1 to 3 μm, which can reserve space for the lateral expansion of the first bonding structure.

[0252] For example, the distance between the first bonding structure and the first barrier structure is 2 μm.

[0253] In this embodiment of the disclosure, the first barrier structure can be a bonding adhesive barrier.

[0254] In this embodiment of the disclosure, after step S28, the process may further include: polishing the substrate and then cutting the light-emitting device.

[0255] Figure 20 This is a flowchart illustrating a method for fabricating a light-emitting panel according to an embodiment of this disclosure. See also... Figure 20 The method includes the following steps:

[0256] S31. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a substrate, and the second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0257] This step can be referred to in S21, and will not be repeated here.

[0258] S32. The epitaxial structure is patterned to form a mesh-like first groove. The bottom of the mesh-like first groove has a mesh-like second groove. The epitaxial structure is divided into multiple epitaxial units by the second groove.

[0259] This step can be referred to in S22, and will not be repeated here.

[0260] S33. A first passivation layer is formed on the epitaxial structure, the first passivation layer covering a plurality of first grooves and a plurality of second grooves.

[0261] This step can be referred to in S22, and will not be repeated here.

[0262] S34. Fabricate a first electrode structure and a connecting electrode. The first electrode structure is located on the first passivation layer and passes through the first passivation layer to be electrically connected to the first grooves of multiple epitaxial units respectively. The first electrode structure has multiple first through holes. The first connecting electrode passes through the first passivation layer and is connected to the transparent conductive layer.

[0263] This step can be referred to in S23, and will not be repeated here.

[0264] S35. Fabricate a second passivation layer on the first passivation layer.

[0265] This step can be referred to in S25, and will not be repeated here.

[0266] S36. Fabricate a second connecting electrode, which is located on the second passivation layer and passes through the second passivation layer to connect with the first connecting electrode.

[0267] This step can be referred to in S26, and will not be repeated here.

[0268] S37. Fabricate multiple first bonding structures, which are located on the second passivation layer and connected to the second connecting electrode.

[0269] This step can be referred to in S27, and will not be repeated here.

[0270] S38. Fabricate a first retaining wall structure. The first retaining wall structure is located on the second passivation layer. The first retaining wall structure has multiple second through holes, and multiple first bonding structures are respectively located in the multiple second through holes.

[0271] This step can be referred to in S28, and will not be repeated here.

[0272] S39. Fabricate the drive backplane.

[0273] In this embodiment of the disclosure, the driving backplane can be a CMOS driving board.

[0274] In one example, step S39 includes:

[0275] The first step is to manufacture the circuit board.

[0276] The second step is to create a passivation layer for the circuit board.

[0277] In this embodiment of the disclosure, the passivation layer of the circuit board can be a stack of SiO2 and SiN.

[0278] Figure 21 This is a top view of the manufacturing process of a drive backplate provided in an embodiment of this disclosure. Figure 22 This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure. See also... Figure 21 and Figure 22 The circuit board passivation layer 330 covers the circuit board 310, and the circuit board passivation layer 330 has a fourth through hole 331.

[0279] The third step is to fabricate the circuit board electrodes and traces. The circuit board electrodes pass through the circuit board passivation layer and connect to the circuit board, while the traces are located on the circuit board passivation layer.

[0280] In this embodiment of the disclosure, the circuit board electrode can be a stack composed of a Ti layer, a Pt layer and an Au layer.

[0281] The Ti layer has a thickness of 100 angstroms, the Pt layer has a thickness of 1500 angstroms, and the Au layer has a thickness of 5000 angstroms.

[0282] In this embodiment of the disclosure, the wiring can be in the form of a mesh for connecting the first electrode structure of the light-emitting device, thereby reducing the resistance of the first electrode structure.

[0283] Figure 23 This is a top view of the manufacturing process of a drive backplate provided in an embodiment of this disclosure. Figure 24 This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure. See also... Figure 23 and Figure 24 The circuit board electrode 320 is located on the circuit board passivation layer 330, covering the fourth through hole 331 of the circuit board passivation layer 330, and is connected to the circuit board 310 through the fourth through hole 331. The trace 360 ​​is located on the circuit board passivation layer 330.

[0284] Step 5: Create the second bonding structure.

[0285] Figure 25 This is a top view of the manufacturing process of a drive backplate provided in an embodiment of this disclosure. Figure 26This is a cross-sectional view of a drive backplate fabrication process provided in an embodiment of this disclosure. See also... Figure 25 and Figure 26 The second bonding structure 340 is disposed on the circuit board electrode 320.

[0286] Step 6: Construct the second retaining wall structure.

[0287] After this step is completed, structural reference. Figure 4 and Figure 5 .

[0288] In this embodiment of the disclosure, in a direction perpendicular to the surface of the circuit board, the height of the second barrier structure is less than the height of the second bonding structure, and the height difference between the second barrier structure and the second bonding structure is 1 to 3 μm.

[0289] In this implementation, the height difference between the second retaining wall structure and the second bonding structure is 1 to 3 μm. This height difference ensures that the height of the second bonding structure after deformation is exactly the same as the height of the second retaining wall structure.

[0290] For example, the height difference between the second retaining wall structure and the second bonding structure is 2 μm.

[0291] In this embodiment of the disclosure, the distance between the second bonding structure and the second barrier structure is 1 to 3 μm in a direction parallel to the surface of the circuit board.

[0292] In this implementation, the distance between the second bonding structure and the second retaining wall structure is 1 to 3 μm, which can reserve space for the lateral expansion of the second bonding structure.

[0293] For example, the distance between the second bonding structure and the second barrier structure is 2 μm.

[0294] S40. Connect the first bonding structure and the second bonding structure, and connect the first retaining wall structure and the second retaining wall structure accordingly.

[0295] In one example, step S40 includes:

[0296] The first step is to connect the first bonding structure to the second bonding structure, and to connect all the retaining wall structures to the second retaining wall structure accordingly.

[0297] The second step is to peel off the substrate.

[0298] In this embodiment of the disclosure, a wavelength of 248 nm and an energy of 150 mJ / cm are used. 2 Laser-assisted substrate removal.

[0299] The third step is to coarse the epitaxial structure.

[0300] In this embodiment of the disclosure, KOH solution is used to roughen the epitaxial structure.

[0301] In this method, a solution containing 10% wt KOH was used, and the mixture was roughened for 30 minutes at a temperature of 50°C.

[0302] The coarsening depth of the epitaxial structure can be 0.5–0.8 μm, and the coarsening particle size of the epitaxial structure can be 0.2–1.2 μm.

[0303] For example, the coarsening depth of the epitaxial structure can be 0.6 μm, and the coarsening grain size of the epitaxial structure can be 0.6 μm.

[0304] S41. A fluorescent layer is fabricated on the side of the epitaxial structure away from the driving backplate.

[0305] In this embodiment of the disclosure, the fluorescent layer can be a blue-to-white phosphor layer.

[0306] In the embodiments of this disclosure, the particle size of the phosphor can be 2 to 10 μm.

[0307] For example, the phosphor has a particle size of 5 μm.

[0308] In this embodiment, the thickness of the fluorescent layer can be 10–100 μm.

[0309] For example, the thickness of the fluorescent layer is 20 μm.

[0310] In this embodiment of the present disclosure, a ring of silicone is provided on the edge of the side of the extension structure away from the drive backplate.

[0311] The fluorescent layer is located within the silicone, and the thickness of the fluorescent layer does not exceed the height of the silicone.

[0312] In this implementation, the fluorescent layer is no higher than the height of the silicone, which is beneficial for the propagation of light and reduces the scattering and reflection loss of light during transmission, thereby improving the light efficiency.

[0313] In this embodiment of the disclosure, the silicone can be a semiconductor encapsulation adhesive layer such as polydimethylsiloxane (PDMS) or electronic silicone rubber.

[0314] For example, the silicone is a PDMS layer.

[0315] In this embodiment of the disclosure, the width of the silicone can be 40 to 60 μm.

[0316] For example, the width of the silicone can be 50 μm.

[0317] In this embodiment of the disclosure, the height of the silicone can be 10 to 100 μm.

[0318] For example, the height of the silicone can be 20 μm.

[0319] In this embodiment of the disclosure, S41 may further include cutting the light-emitting panel.

[0320] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light emitting panel, characterized by The light emitting panel comprises a light emitting device (400) and a driving backplane (300); The light emitting device (400) comprises a plurality of first bonding structures (40) and a first barrier structure (50); The driving backplane (300) comprises a plurality of second bonding structures (340) and a second barrier structure (350); The plurality of first bonding structures (40) of the light emitting device (400) and the second barrier structure (350) of the driving backplane (300) are in contact; or, the plurality of second bonding structures (340) of the driving backplane (300) and the first barrier structure (50) of the light emitting device (400) are in contact.

2. The light emitting panel of claim 1, wherein, The first barrier structure (50) has a plurality of second through holes (2002), and the plurality of first bonding structures (40) are respectively located in the plurality of second through holes (2002).

3. The light emitting panel according to any of claims 1 to 2, characterized in that, The light emitting device (400) further comprises a first electrode structure (30), and a projection of the first electrode structure (30) on the light emitting surface is located in a projection of the first barrier structure (50) on the light emitting surface.

4. A light emitting panel according to any one of claims 1 to 3, characterized in that The second barrier structure (350) has a plurality of third through holes (2003), and the plurality of second bonding structures (340) are respectively located in the plurality of third through holes (2003).

5. The light emitting panel according to any of claims 1 to 4, characterized in that, The driving backplane (300) further comprises a wiring (360), and a projection of the wiring (360) on the surface of the driving backplane (300) is located in a projection of the second barrier structure (350) on the surface of the driving backplane (300).

6. A method of manufacturing a light emitting panel, characterized by, The manufacturing method comprises the steps of: providing a light emitting device (400), the light emitting device (400) comprising a plurality of first bonding structures (40) and a first barrier structure (50); providing a driving backplane (300), the driving backplane (300) comprising a plurality of second bonding structures (340) and a second barrier structure (350); bonding the light emitting device (400) and the driving backplane (300), the plurality of first bonding structures (40) of the light emitting device (400) and the second barrier structure (350) of the driving backplane (300) being in contact; or, the plurality of second bonding structures (340) of the driving backplane (300) and the first barrier structure (50) of the light emitting device (400) being in contact.

7. The method of manufacturing a light emitting panel according to claim 6, wherein In the step of providing the light emitting device (400), the height of the first barrier structure (50) is less than the height of the first bonding structure (40).

8. The method of manufacturing a light emitting panel according to any one of claims 6 to 7, wherein In the step of providing the light emitting device (400), there is a gap between the first barrier structure (50) and each of the plurality of first bonding structures (40).

9. The method of manufacturing a light emitting panel according to any one of claims 6 to 8, wherein In the step of providing the driving backplane (300), the height of the second barrier structure (350) is less than the height of the second bonding structure (340).

10. The method of manufacturing a light emitting panel according to any one of claims 6 to 9, wherein In the step of providing the driving backplane (300), there is a gap between each of the plurality of second bonding structures (340) and the second barrier structure (350).

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