Precise etching method for screen cloth
By using an oxide resin layer to protect the non-gate area of the mesh and performing chemical etching only on the gate area, the problems of high cost and breakage risk of tungsten wire chemical corrosion are solved, achieving cost reduction and a reduction in breakage risk.
Patent Information
- Application Number
- CN202511855909.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-10
- Publication Date
- 2026-03-20
AI Technical Summary
In existing technologies, the chemical corrosion of tungsten wires in photovoltaic panels is costly and increases the risk of breakage, failing to effectively reduce production costs and the risk of tungsten wire breakage in non-printed areas.
A precision etching method is employed, which uses an oxide resin layer to protect the non-grid area of the mesh and performs chemical etching only on the grid area, thereby controlling the application range of the tungsten etchant and reducing tungsten wire corrosion in non-printing areas.
This reduces production costs and the risk of tungsten wire breakage in non-printed areas, while improving etching efficiency and material utilization.
Abstract
Description
Technical Field
[0001] This invention relates to the technical field of solar panel wire mesh, specifically a precision etching method for wire mesh fabric. Background Technology
[0002] In the photovoltaic industry, the surface of solar photovoltaic panels requires screen printing using grid lines. The pre-fabricated grid lines consist of tungsten wires with a diameter of 11μm. To print relatively fine and dense patterns, current technology requires further chemical etching of the 11μm tungsten wires to obtain even finer wires. However, the tungsten etchant used in chemical etching is expensive, and because current technology involves chemical etching of the entire grid area, the cost of the tungsten etchant required for the entire chemical etching process is high. Furthermore, etching the entire area of tungsten wires results in uniformly thinner wires, increasing the risk of wire breakage during transport. Therefore, this method of chemical etching across the entire area is not conducive to reducing production costs and also increases the risk of tungsten wire breakage. Therefore, there is an urgent need to develop a method that can chemically etch only the grid lines in the printing area to reduce production costs and the risk of tungsten wire breakage in other non-printing areas. Summary of the Invention
[0003] To address the aforementioned problems, this invention provides a precision etching method for mesh fabric, which chemically etches only the tungsten wires in the printing area, thereby reducing production costs and the risk of tungsten wire breakage in other non-printing areas.
[0004] A precision etching method for a mesh fabric is characterized in that: after the mesh fabric is stretched onto a mesh frame, the non-grid line areas are then protected, and the grid line areas of the set pattern are chemically etched, so that the tungsten etchant only needs to etch the grid line areas, while the non-grid line areas are protected by an oxide resin layer.
[0005] Its further feature is that it includes the following steps: S1 mesh is laid out onto the mesh frame; S2 has an epoxy resin layer covering both sides of the mesh fabric and then cured. S3 pre-fabricates a black film. The black area of the black film corresponds to the grid line area of the mesh that needs to be etched, and the white area of the black film corresponds to the non-laser grid line area of the mesh and is used for protection. The black film is placed on an oxide resin layer. S4. Then, the non-laser grid line area of the mesh is protected by exposure and development. The black film is removed, so that the laser grid line area to be etched is exposed. S5 achieves precision etching by reducing the diameter of the tungsten wire within the laser grid area using tungsten etchant.
[0006] Its further characteristic is: In step S3, two black film sheets are used to cover the epoxy resin layers on the two surfaces of the mesh fabric respectively. Step S4: The epoxy resin layers on both sides are exposed and developed to protect the non-laser grid line areas on the two surfaces of the mesh fabric. Then the black film is removed. In step S5, the mesh is immersed in the tungsten etchant for 5 to 35 minutes at a temperature of 50 ± 10°C. The set wire diameter of the tungsten wire is etched away by the tungsten etchant by 0.5 to 3 μm, and the mesh knots shrink at the same time. After step S5, the residual tungsten etchant on the surface of the mesh is removed by rinsing with deionized water, thereby ensuring that no tungsten etchant remains on the surface of the tungsten wire.
[0007] With this invention, the non-grid area of the mesh is protected by an oxide resin layer, and the grid area of the set pattern is chemically etched, so that the tungsten etchant only needs to chemically corrode the tungsten wire in the printed area, thereby reducing production costs and reducing the risk of tungsten wire breakage in other non-printed areas. Detailed Implementation
[0008] A precision etching method for a mesh fabric: After the mesh fabric is stretched onto a mesh frame, the non-grid line areas are protected, and the grid line areas of the set pattern are chemically etched, so that the tungsten etchant only needs to etch the grid line areas, while the non-grid line areas are protected by an oxide resin layer.
[0009] It includes the following steps: S1 mesh is laid out onto the mesh frame; S2 has an epoxy resin layer covering both sides of the mesh and cured, with the epoxy resin layer having a thickness of 2μm to 5μm; S3 pre-fabricates a black film. The black area of the black film corresponds to the grid line area of the mesh that needs to be etched, and the white area of the black film corresponds to the non-laser grid line area of the mesh and is used for protection. The grid line area is formed by expanding outward by 100μm on both sides of the grid line as the center point, forming an area with a width of 200μm. Then, the black film is placed on the surface of the oxide resin layer. In practice, two black films are used to cover the epoxy resin layers on the two surfaces of the mesh fabric to ensure proper exposure and development in the subsequent process. S4. The epoxy resin layers on both sides are exposed and developed to protect the non-laser grid line areas on the two surfaces of the mesh. Then the black film is removed, exposing the laser grid line areas that need to be etched. S5 achieves precision etching by reducing the diameter of the tungsten wire within the tungsten etchant laser grid area; In step S5, the mesh is immersed in the tungsten etchant for 5 to 35 minutes at a temperature of 50 ± 10°C. The set wire diameter of the tungsten wire is etched away by the tungsten etchant by 0.5 to 3 μm, and the mesh knots shrink. After step S5, the residual tungsten etchant on the surface of the mesh is removed by rinsing with deionized water, thereby ensuring that no tungsten etchant remains on the surface of the tungsten wire.
[0010] The non-grid area of the mesh is protected by an oxide resin layer, and the grid area with the set pattern is chemically etched, so that the tungsten etchant only needs to chemically corrode the tungsten wire in the printed area, thereby reducing production costs and reducing the risk of tungsten wire breakage in other non-printed areas.
[0011] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within the present invention.
[0012] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims
1. A precision etching method for a mesh fabric, characterized in that: After the mesh is stretched onto the frame, the non-grid areas are protected, and the grid areas of the set pattern are chemically etched, so that the tungsten etchant only needs to etch the grid areas, while the non-grid areas are protected by an oxide resin layer.
2. The precision etching method for a mesh fabric according to claim 1, characterized in that, It includes the following steps: S1 mesh is laid out onto the mesh frame; S2 has an epoxy resin layer covering both sides of the mesh fabric and then cured. S3 pre-fabricates a black film. The black area of the black film corresponds to the grid line area of the mesh that needs to be etched, and the white area of the black film corresponds to the non-laser grid line area of the mesh and is used for protection. The black film is placed on an oxide resin layer. S4. Then, the non-laser grid line area of the mesh is protected by exposure and development. The black film is removed, so that the laser grid line area to be etched is exposed. S5 achieves precision etching by reducing the diameter of the tungsten wire within the laser grid area using tungsten etchant.
3. The precision etching method for a mesh fabric according to claim 2, characterized in that: In step S3, two black films are used to cover the epoxy resin layers on the two surfaces of the mesh fabric.
4. The precision etching method for a mesh fabric according to claim 3, characterized in that: In step S4, the epoxy resin layers on both sides are exposed and developed to protect the non-laser grid lines on both surfaces of the mesh fabric, and then the black film is removed.
5. The precision etching method for a mesh fabric according to claim 2, characterized in that: In step S5, the mesh is immersed in the tungsten etchant for 5 to 35 minutes at a temperature of 50 ± 10°C. The set wire diameter of the tungsten wire is etched away by the tungsten etchant by 0.5 to 3 μm, and the mesh knots shrink at the same time.
6. The precision etching method for a mesh fabric according to claim 2, characterized in that: After step S5, the residual tungsten etchant on the surface of the mesh is removed by rinsing with deionized water, thereby ensuring that no tungsten etchant remains on the surface of the tungsten wire.