Light emitting device and electronic apparatus

Abstract

A light emitting device capable of effectively dissipating heat is provided. The light-emitting device includes: a plurality of light-emitting elements; a drive substrate having a drive circuit section for driving the light-emitting element; and a heat dissipation substrate directly bonded to the driving substrate.

Description

Technical Field

[0001] This disclosure relates to light-emitting devices and electronic devices. Background Technology

[0002] With advancements in miniaturization and high resolution, light-emitting devices using light-emitting elements such as semiconductor light-emitting elements are expected to be applied in various fields such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). For example, Patent Document 1 below describes a light-emitting device using micro light-emitting diodes (LEDs) as light-emitting elements.

[0003] Reference List

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-86461 Summary of the Invention

[0006] The problem to be solved by the present invention

[0007] In recent years, with the increase in brightness and current flowing through light-emitting elements, the heat generated when these elements emit light has also increased. Therefore, there is a need in this field for structures that can effectively dissipate the heat generated in light-emitting devices.

[0008] The purpose of this disclosure is to provide a light-emitting device and an electronic device with an efficient heat dissipation structure.

[0009] Solution to the problem

[0010] This disclosure is, for example, a light-emitting device, comprising:

[0011] Multiple light-emitting elements;

[0012] A driving substrate, the driving substrate including a driving circuit section for driving the light-emitting element; and

[0013] A heat dissipation substrate that is directly bonded to the drive substrate.

[0014] This disclosure can be applied to electronic devices that include the aforementioned light-emitting device. Attached Figure Description

[0015] Figure 1 The diagram is intended to be referenced to illustrate the issues to be considered in this disclosure.

[0016] Figure 2 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device according to the first embodiment.

[0017] Figure 3 The figures are for reference to illustrate an example of a method for manufacturing a light-emitting device according to the first embodiment.

[0018] Figure 4 The figures are for reference to illustrate an example of a method for manufacturing a light-emitting device according to the first embodiment.

[0019] Figure 5 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device according to the third embodiment.

[0020] Figure 6 This is a cross-sectional schematic diagram illustrating another example of the cross-sectional structure of the light-emitting device according to the third embodiment.

[0021] Figure 7 This is a cross-sectional schematic diagram illustrating another example of the cross-sectional structure of the light-emitting device according to the third embodiment.

[0022] Figure 8 Figures A and B are used to illustrate an example of the construction of the light-emitting device according to the fourth embodiment.

[0023] Figure 9 Figures A to C are for reference to illustrate an example of a method for manufacturing a light-emitting device according to the fourth embodiment.

[0024] Figure 10 Figures A to C are for reference to illustrate an example of a method for manufacturing a light-emitting device according to the fourth embodiment.

[0025] Figure 11 Figures A to D are to be referenced to illustrate an example of another manufacturing method of the light-emitting device according to the fourth embodiment.

[0026] Figure 12 Figures A to C are to be referenced to illustrate an example of another manufacturing method of the light-emitting device according to the fourth embodiment.

[0027] Figure 13 Figures A and C are to be referenced to illustrate an example of another manufacturing method of the light-emitting device according to the fourth embodiment.

[0028] Figure 14 This is a diagram illustrating a modified example of the light-emitting device according to the fourth embodiment.

[0029] Figure 15 Figures A and B are used to illustrate an example of the construction of the light-emitting device according to the fifth embodiment.

[0030] Figure 16 Figures A and B are used to illustrate an example of the construction of the light-emitting device according to the sixth embodiment.

[0031] Figure 17 Figures A and B are used to illustrate an example of the construction of the light-emitting device according to the seventh embodiment.

[0032] Figure 18 Figures A and B are used to illustrate an example of the construction of the light-emitting device according to the eighth embodiment.

[0033] Figure 19 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device according to the ninth embodiment.

[0034] Figure 20 A is a front view of an example of the appearance of a digital still camera. Figure 20 B is a rear view of an example illustrating the appearance of a digital still camera.

[0035] Figure 21 This is a perspective view illustrating an example of the appearance of a head-mounted display.

[0036] Figure 22 This is a perspective view illustrating an example of the appearance of a television device.

[0037] Figure 23 This is a perspective view illustrating an example of the appearance of a perspective-type head-mounted display.

[0038] Figure 24 This is a perspective view illustrating an example of what a smartphone looks like.

[0039] Figure 25 A is a diagram illustrating an example of the interior state of a vehicle from the rear to the front. Figure 25 B is a diagram illustrating an example of the interior state of a vehicle from the rear to the front. Detailed Implementation

[0040] In the following description, embodiments of the present disclosure will be described with reference to the accompanying drawings. Note that the description will be given in the following order.

[0041] <Issues to be considered in this disclosure>

[0042] <First Embodiment>

[0043] <Second Embodiment>

[0044] <Third Embodiment>

[0045] <Fourth Embodiment>

[0046] <Fifth Embodiment>

[0047] <Sixth Embodiment>

[0048] <Seventh Embodiment>

[0049] <Eighth Embodiment>

[0050] <Ninth Embodiment>

[0051] <Application Example>

[0052] <Variation Example>

[0053] The embodiments described below are preferred examples of this disclosure, and the content of this disclosure is not limited to these embodiments. Note that in the following description, components with substantially the same functional structure are denoted by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, to prevent the illustrations from becoming complex, only some components may be denoted by reference numerals, or the illustrations may be simplified or enlarged / reduced. Additionally, directions such as up / down and left / right are defined for ease of description, but the content of this disclosure is not limited to these directions. Furthermore, in the following description, the X-axis, Y-axis, and Z-axis are orthogonal to each other, the X-axis and Y-axis are axes in a predetermined plane, and the Z-axis is an axis orthogonal to the predetermined plane.

[0054] In the following description, a light-emitting device using a compound semiconductor light-emitting element (LED element) as the light-emitting element will be described as an example. However, this does not preclude the possibility that the light-emitting element of the light-emitting device according to this disclosure is not an LED element. As the light-emitting element, light-emitting elements including organic EL light-emitting elements (organic light-emitting diodes) or quantum dots can be employed. Furthermore, there are no particular limitations on the size of the light-emitting element in a planar view, and, for example, among OLED elements and LED elements, even smaller so-called micro-OLED elements and micro-LED elements can be employed as light-emitting elements.

[0055] <Issues to be considered in this disclosure>

[0056] First, to facilitate understanding of this disclosure, the issues to be considered in this disclosure will be described. Figure 1 This is a cross-sectional schematic diagram illustrating an example of a light-emitting device (light-emitting device 1) with a general structure. Light-emitting device 1 includes multiple LED elements. For example, red, green, and blue are defined as various color types, and light-emitting device 1 includes a red LED element 2R, a green LED element 2G, and a blue LED element 2B corresponding to these color types. Each of LED elements 2R, 2G, and 2B constitutes a sub-pixel, and these three sub-pixels constitute one pixel. The dominant wavelengths of light corresponding to the red, green, and blue color types can be determined, for example, within the range of 610nm to 650nm (red band), 510nm to 590nm (green band), and 440nm to 480nm (blue band), respectively. Note that, where it is not necessary to distinguish individual LED elements, they will be appropriately referred to collectively as LED elements 2.

[0057] The layout of the individual LED elements 2 is not particularly limited, but examples include a layout in which the individual LED elements 2, formed in a rectangular shape, are arranged in a matrix. The layout of the LED elements 2 can be a strip layout, a triangular layout, etc. Furthermore, although in Figure 1 The diagram shows three LED elements 2, but the number of LED elements 2 can be appropriately changed depending on the type of electronic device to which the light-emitting device 1 can be applied.

[0058] An example of the construction of the light-emitting device 1 will be schematically described. The light-emitting device 1 includes a driving substrate 3. The driving substrate 3 includes a first surface 3A and a second surface 3B opposite to the first surface 3A. Note that in the following description, for other components, the surface disposed on the +Z direction side may also be referred to as the first surface, and the surface opposite to the first surface and disposed on the -Z direction side may also be referred to as the second surface. The driving substrate 3 drives a plurality of LED elements 2. When each LED element 2 is driven, the LED element 2 emits light and generates heat. Note that in the construction of the light-emitting device 1, the +Z direction (the direction schematically indicated by the arrow) is the light emission direction.

[0059] The heat sink 5 is connected to the second surface 3B, which is the back side of the driving substrate 3, via a thermal interface material (TIM) 4, which includes thermally conductive material. Using this structure, the heat generated by the LED element 2 is transferred to the heat sink 5 via the TIM 4 for heat dissipation.

[0060] However, in the above heat dissipation structure, since the heat sink 5 is used as a heat dissipation component, there is a problem that the overall size of the light-emitting device 1 becomes larger. In particular, when the light-emitting device 1 is applied to a wearable device, increasing the size of the light-emitting device 1 is disadvantageous. Furthermore, depending on the thickness of the driving substrate 3, the thermal conductivity in the driving substrate 3 may also be a bottleneck. In addition, the thermal conductivity of the adhesive binding the driving substrate 3 and the heat dissipation component such as the heat sink 5 may also be a bottleneck. The details of this disclosure will be described with reference to embodiments while taking the above points into consideration.

[0061] <First Embodiment>

[0062] [Example of a light-emitting device]

[0063] Figure 2 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100) according to the first embodiment. The light-emitting device 100 schematically includes an LED element 10, a driving substrate 11, a heat-dissipating substrate 12, a protective layer 13, and a cover glass 14. Figure 2In the configuration of the light-emitting device 100 shown in the figure, light from the LED element 10 is emitted from the cover glass 14 toward the upper side (+Z direction). Note that the cross-section of the components of the light-emitting device 100 described below can be observed using scanning electron microscopy (SEM) or energy-dispersive X-ray (EDX) compositional analysis.

[0064] (LED components)

[0065] LED element 10 includes LED element 10R that emits red light, LED element 10G that emits green light, and LED element 10B that emits blue light. LED element 10 may also include LED elements that emit other colors of light (e.g., white). In the following description, unless it is necessary to distinguish between LED element 10R, LED element 10G, and LED element 10B, they are appropriately referred to collectively as LED element 10.

[0066] Each LED element 10 includes a stacked structure in which multiple compound semiconductor layers are stacked, and an electrode portion connected to the stacked structure. For example, LED element 10R includes a first compound semiconductor layer 21R, a second compound semiconductor layer 22R, and a light-emitting layer (also called an active layer, etc.) 23R as a stacked structure, and includes a first electrode 31R and a second electrode 32R as electrode portions. Furthermore, LED element 10G includes a first compound semiconductor layer 21G, a second compound semiconductor layer 22G, and a light-emitting layer 23G as a stacked structure, and includes a first electrode 31G and a second electrode 32G as electrode portions. Furthermore, LED element 10B includes a first compound semiconductor layer 21B, a second compound semiconductor layer 22B, and a light-emitting layer 23B as a stacked structure, and includes a first electrode 31B and a second electrode 32B as electrode portions.

[0067] Note that in the following description, when it is not necessary to distinguish between the individual first compound semiconductor layers, they are appropriately referred to collectively as first compound semiconductor layer 21; when it is not necessary to distinguish between the individual second compound semiconductor layers, they are appropriately referred to collectively as second compound semiconductor layer 22; and when it is not necessary to distinguish between the individual light-emitting layers, they are appropriately referred to collectively as light-emitting layer 23. Similarly, when it is not necessary to distinguish between the individual first electrodes, the first electrodes are appropriately referred to collectively as first electrode 31; and when it is not necessary to distinguish between the individual second electrodes, the second electrodes are appropriately referred to collectively as second electrode 32.

[0068] The stacked structure of each LED element 10 has a structure in which the light-emitting layer 23 is the core layer, and the first compound semiconductor layer 21 and the second compound semiconductor layer 22 are cladding layers sandwiching the core layer. Figure 2In the example, the first compound semiconductor layer 21 is a cladding layer close to the light-emitting surface (the side of the cover glass 14) of the LED element 10, and the second compound semiconductor layer 22 is a cladding layer away from the light-emitting surface. The light-emitting layer 23 is disposed between the first compound semiconductor layer 21 and the second compound semiconductor layer 22. However, the construction of the stacked structure of the LED element 10 is not limited to this, and other stacked structures besides the above can be provided.

[0069] The first compound semiconductor layer 21 has a first conductivity type, and the second compound semiconductor layer 22 has a second conductivity type opposite to the first conductivity type. Specifically, for example, the first compound semiconductor layer 21 has an n-type conductivity, and the second compound semiconductor layer 22 has a p-type conductivity. The first conductivity type can be p-type, and the second conductivity type can be n-type.

[0070] The first compound semiconductor layer 21 and the second compound semiconductor layer 22 include compound semiconductors. These compound semiconductors are, for example, GaN-based compound semiconductors (including AlGaN mixed crystals, AlInGaN mixed crystals, or InGaN mixed crystals), InN-based compound semiconductors, InP-based compound semiconductors, AlN-based compound semiconductors, GaAs-based compound semiconductors, AlGaAs-based compound semiconductors, AlGaInP-based compound semiconductors, AlGaInAs-based compound semiconductors, AlAs-based compound semiconductors, GaInAs-based compound semiconductors, GaInAsP-based compound semiconductors, GaP-based compound semiconductors, or GaInP-based compound semiconductors.

[0071] Among these compounds, n-type GaN or n-type AlGaInP (which can be described as n-GaN and n-AlGaInP, respectively) are suitable for use in the first compound semiconductor layer 21. Furthermore, the first compound semiconductor layer 21 may be p-type, and the second compound semiconductor layer 22 may be n-type. In this case, p-type AlGaInP (sometimes referred to as p-AlGaInP) is suitable for use in the first compound semiconductor layer 21. Therefore, the first compound semiconductor layer 21 may specifically be a compound semiconductor layer comprising at least one selected from the group consisting of n-GaN, n-AlGaInP, and p-AlGaInP.

[0072] When the first compound semiconductor layer 21 has an n-type impurity and the second compound semiconductor layer 22 has a p-type impurity, the n-type impurity added to the first compound semiconductor layer 21 is, for example, silicon (Si), selenium (Se), germanium (Ge), tin (Sn), carbon (C), or titanium (Ti). The p-type impurity added to the second compound semiconductor layer 22 is zinc (Zn), magnesium (Mg), beryllium (Be), cadmium (Cd), calcium (Ca), barium (Ba), or oxygen (O).

[0073] The first compound semiconductor layer 21 and the second compound semiconductor layer 22 may include materials for a substrate used to form a semiconductor crystal element. Examples of materials for the substrate used to form the semiconductor crystal element include sapphire, GaN, GaAs, InP, etc.

[0074] The light-emitting layer 23 comprises a compound semiconductor. Examples of the compound semiconductor may include materials similar to those used in the first compound semiconductor layer 21 and the second compound semiconductor layer 22. The light-emitting layer 23 may comprise a single compound semiconductor layer, or may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure.

[0075] Depending on the material of the light-emitting layer 23, a red light-emitting layer 23R that generates red light, a green light-emitting layer 23G that generates green light, and a blue light-emitting layer 23B that generates blue light can be formed. Therefore, by appropriately selecting and adjusting the material of the light-emitting layer 23, an LED element 10 can be formed using any one of the LED element 10R that generates red light, the LED element 10G that generates green light, and the LED element 10B that generates blue light.

[0076] Note that the LED element 10 can be an ultraviolet light-emitting element (including nitride-based III-V compound semiconductors) or an infrared light-emitting element (including AlGaAs or GaAs-based compound semiconductors) in the invisible range for motion sensors, etc.

[0077] One end of the first electrode 31 is connected to the first compound semiconductor layer 21, and the other end is connected to a common wiring portion (common wiring portion 41 described later). The first electrode 31 is, for example, a cathode electrode. One end of the second electrode 32 is individually electrically connected to the second compound semiconductor layer 22 of each stacked structure. Furthermore, the other end of the second electrode 32 is connected to a suitable driving circuit portion (not shown) included in the driving substrate 11. The second electrode 32 is, for example, an anode electrode.

[0078] The material of the first electrode 31 includes at least one metal (including alloys) selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), platinum (Pt), nickel (Ni), Al (aluminum), Ti (titanium), tungsten (W), vanadium (V), chromium (Cr), copper (Cu), Zn (zinc), tin (Sn), and indium (In).

[0079] The first electrode 31 has, for example, a single-layer structure or a multi-layer structure. Examples of multi-layer structures include Ti / Au, Ti / Al, Ti / Pt / Au, Ti / Al / Au, Ni / Au, AuGe / Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, etc. In the case where the first electrode 31 has a multi-layer structure, the layer before the " / " in the multi-layer structure is closer to the light-emitting layer 23. This also applies to examples where the second electrode 32 has a multi-layer structure.

[0080] In addition to the above, examples of materials for the first electrode 31 may also include indium oxide, indium tin oxide (including indium tin oxide (ITO), Sn-doped In2O3, crystalline ITO and amorphous ITO), indium zinc oxide (indium zinc oxide (IZO)), indium gallium oxide (IGO), indium-doped gallium zinc oxide (IGZO: In-GaZnO4), IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO, Al-doped ZnO, B-doped ZnO, Ga-doped ZnO), antimony oxide, spinel-type oxides or oxides having a YbFe2O4 structure.

[0081] Examples of materials for the second electrode 32, as described in the first electrode 31, include indium oxide, indium tin oxide (including indium tin oxide (ITO), Sn-doped In2O3, crystalline ITO and amorphous ITO), indium zinc oxide (indium zinc oxide (IZO)), indium gallium oxide (IGO), indium-doped gallium zinc oxide (IGZO: In-GaZnO4), IFO (F-doped In2O3), tin oxide (SnO2), ATO (Sb-doped SnO2), FTO (F-doped SnO2), zinc oxide (including ZnO, Al-doped ZnO, B-doped ZnO, Ga-doped ZnO), antimony oxide, spinel oxide, and oxides having a YbFe2O4 structure.

[0082] Furthermore, examples of materials for the second electrode 32 include at least one metal (including alloys) selected from the group consisting of gold (Au), silver (Ag), palladium (Pd), platinum (Pt), nickel (Ni), Al (aluminum), Ti (titanium), tungsten (W), vanadium (V), chromium (Cr), Cu (copper), zinc (Zn), tin (Sn), and indium (In).

[0083] (Driver substrate)

[0084] The driving substrate 11 is a so-called backplane and drives a plurality of LED elements 10. The driving substrate 11 includes a first surface 11A and a second surface 11B opposite to the first surface 11A. The driving substrate 11 includes, for example, a substrate and an interlayer insulating layer (these configurations are not shown). The interlayer insulating layer can be formed by stacking on the substrate, or a portion thereof can be formed directly on the substrate by a semiconductor process.

[0085] The substrate is, for example, a semiconductor substrate such as a silicon substrate. Semiconductor substrates include, for example, amorphous silicon, polycrystalline silicon, monocrystalline silicon, etc. The interlayer insulating layer includes, for example, organic or inorganic materials. Organic materials include, for example, at least one material selected from polyimide or acrylic resin. Inorganic materials include, for example, at least one material selected from silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide.

[0086] The substrate can be a glass substrate with low moisture and oxygen permeability or an insulating substrate such as quartz or resin. Glass substrates include, for example, high strain point glass, soda glass, borosilicate glass, magnesium olivine, lead glass, quartz glass, etc. Specific examples of resin substrates include at least one selected from the group consisting of polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate. The substrate has, for example, a sheet shape. The substrate can be flexible.

[0087] The interlayer insulating layer contains a driving circuit section for driving multiple LED elements 10. Examples of the driving circuit section include a driving circuit for controlling the driving of the LED elements 10 and a power supply circuit for supplying power to the multiple LED elements 10 (neither of which is shown). The various circuits are confined to the outside by the interlayer insulating layer.

[0088] (Heat dissipation substrate)

[0089] The heat dissipation substrate 12 is a substrate used to dissipate heat generated from the LED element 10. The heat dissipation substrate 12 comprises a thermally conductive material with a thermal conductivity higher than that of the driving substrate 11. For example, metals or compounds thereof such as copper (Cu), aluminum (Al), gold (Au), and silver (Ag) can be used as such a thermally conductive material. The heat dissipation substrate 12 is a non-conductive material and may comprise a material with high thermal conductivity. Examples of such materials include aluminum nitride (AlN). The thickness of the heat dissipation substrate 12 (…) Figure 2 The length in the Z direction only needs to be adjusted appropriately, but the greater the thickness, the better the heat dissipation effect.

[0090] The first surface 12A of the heat dissipation substrate 12 is directly bonded to the second surface 11B of the drive substrate 11. Here, "direct bonding" refers not only to bonding the drive substrate and the heat dissipation substrate directly without any intervening layers, but also to bonding the drive substrate 11 and the heat dissipation substrate 12 without an adhesive such as resin. Specifically, the drive substrate 11 and the heat dissipation substrate 12 can be bonded by anodic bonding, fusion bonding (hydrophilic bonding), diffusion bonding, and surface-activated bonding (also known as room-temperature bonding). In anodic bonding, bonding is performed using electrostatic attraction while applying a high voltage between the substrates to be bonded. In fusion bonding (hydrophilic bonding), bonding is performed at high temperature after hydrophilic treatment of the surfaces. In diffusion bonding, metal surfaces are bonded under high temperature and high pressure at a temperature below or equal to the melting point of the substrate. In surface-activated bonding (also known as room-temperature bonding), bonding is performed at low temperature by irradiating the surfaces with plasma or the like. Typically, the two surfaces to be bonded are polished and cleaned to ensure they are flat and free of contamination and impurities, and then bonded using surface treatments, temperatures, and pressures suitable for the bonding materials. In the presence of a mixture of silicon or glass and metal, bonding is sometimes performed via a bonding layer including metals, etc. However, the bonding layer in this specification refers to a bonding layer in which molecular bonding occurs at a temperature below or equal to the melting point, rather than through fusion bonding by heating with solder paste or silver paste at a temperature above or equal to the melting point. Such a bonding layer may be located between the driving substrate 11 and the heat dissipation substrate 12. However, from a heat dissipation point of view, it is preferable that the driving substrate 11 and the heat dissipation substrate 12 are directly bonded.

[0091] (Protective layer)

[0092] In the light-emitting device 100, adjacent LED elements 10 are separated by a protective layer 13. The protective layer 13 preferably comprises at least one material selected from the group consisting of dielectrics, resins, and metals. The material of the protective layer 13 may include, for example, SiO2. X Base material, SiN Y Base materials and SiO X N Y One or more materials from the group consisting of the base materials, and additionally, materials including Ta2O5, ZrO2, AlN, or Al2O3 may be exemplified. As the protective layer 13, a material with insulating properties is suitable.

[0093] (Cover the glass)

[0094] The cover glass 14 is configured to cover the protective layer 13. A glass substrate can be used as the cover glass 14. There are no particular limitations on the material of the glass substrate, as long as it includes materials that transmit light emitted from the LED element 10. Examples of glass substrate materials include various glass substrates such as high strain point glass, soda glass, borosilicate glass, and lead glass, as well as quartz substrates. The cover glass 14 is not limited to a glass substrate and can be plastic or a film.

[0095] (Shared cabling department)

[0096] A common wiring portion 41 is partially located between the protective layer 13 and the cover glass 14. A wiring portion 42 extending in the Z direction is connected to the end of the common wiring portion 41. The common wiring portion 41 is connected to the driving circuit of the driving substrate 11 via the wiring portion 42. Furthermore, the first electrode 31 of each LED element 10 is connected to the common wiring portion 41. That is, in this embodiment, the first electrode 31 is configured as an electrode shared by each LED element 10.

[0097] The common wiring section 41 is preferably a transparent electrode (e.g., ITO) that is transparent to light generated by the LED element 10. The transparent electrode referred to herein includes a transparent electrode containing a transparent conductive layer, and a transparent electrode having a stacked structure (not shown) including a transparent conductive layer and a semi-transparent reflective layer.

[0098] [effect]

[0099] The function of the light-emitting device 100 will be described schematically. When current flows between the first electrode 31 and the second electrode 32, the light-emitting layer 23 of the predetermined LED element 10 emits light. The light generated by this emission is emitted to the outside through the cover glass 14 and is visually identifiable. The heat generated when the LED element 10 emits light is transferred to the heat dissipation substrate 12 via the driving substrate 11 and dissipated.

[0100] [Manufacturing Method]

[0101] An example of a manufacturing method for the light-emitting device 100 will be described. For example... Figure 3 As illustrated, LED elements 10 are formed on the first surface 11A of the driving substrate 11, and wiring is connected to the first electrode 31 and the second electrode 32 of each LED element 10, followed by the formation of a protective layer 13. Note that the semiconductor layer can be formed by applying methods such as MOCVD (metal-organic chemical vapor deposition). Furthermore, circuits, wiring, electrodes, etc., can be formed by applying etching, photolithography, etc. Next, as... Figure 4 As illustrated, after the cover glass 14 is bonded to the protective layer 13, the first surface 12A of the heat dissipation substrate 12 is directly bonded to the second surface 11B of the drive substrate 11. Therefore, the process is complete. Figure 2The light-emitting device 100 is shown in the figure. Note that, in order to make the bonding easier, a planarization process can be performed to planarize the second surface 11B of the driving substrate 11.

[0102] [Effects obtained from this embodiment]

[0103] According to this embodiment, heat dissipation can be achieved efficiently by directly bonding a heat dissipation substrate with high heat dissipation and large heat capacity to the driving substrate.

[0104] Furthermore, since the heat dissipation substrate serves as a heat sink, its volume can be smaller than that of heat dissipation components such as heat sinks or cooling fans, thus preventing the light-emitting device from becoming too large. Therefore, the light-emitting device can also be applied to small electronic devices such as wearable devices.

[0105] <Second Embodiment>

[0106] Next, a second embodiment will be described. Note that in the description of the second embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may be applied to the second embodiment.

[0107] As a light-emitting device in the second embodiment, the light-emitting device 100 described in the first embodiment can be used, for example. In the second embodiment, the heat dissipation substrate 12 includes, for example, a thermally conductive metal, and the coefficient of thermal expansion (CTE) of the heat dissipation substrate 12 is greater than or equal to the coefficient of thermal expansion of the driving substrate 11.

[0108] When the driving substrate 11 and the heat dissipation substrate 12 are directly bonded to each other, thermal stress is concentrated on the bonding surface that serves as the boundary. However, by setting the coefficient of thermal expansion as described above, thermal stress can be released, thereby suppressing warping of the driving substrate 11 and the heat dissipation substrate 12, malfunctions caused by wiring cutting, and degradation of the image quality of the image obtained by the light-emitting device 100.

[0109] Note that, for example, when the driving substrate 11 is made of silicon (Si), by constructing the heat dissipation substrate 12 using, for example, aluminum nitride (AlN), the coefficients of thermal expansion of the two substrates can be made substantially equal. That is, the coefficients of thermal expansion can be matched. This provides a similar effect to that described above. It is important to note that the fact that the coefficients of thermal expansion of the two substrates are substantially equal means that their coefficients are close enough to achieve this effect.

[0110] <Third Embodiment>

[0111] Next, a third embodiment will be described. It should be noted that in the description of the third embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may be applied to the third embodiment.

[0112] Figure 5 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100A) according to the third embodiment. In the light-emitting device 100A, the thickness (length in the Z direction) of the driving substrate 11 is less than (thinner than) the thickness in the light-emitting device 100. Specifically, the thickness of the driving substrate 11 in the light-emitting device 100A is less than the thickness of the heat dissipation substrate 12. The thickness of the driving substrate 11 can be appropriately set within the above range, but the thickness is preferably as small as possible. For example, the thickness of the driving substrate 11, excluding the circuit structure (driving circuit section) included in the driving substrate 11 such as the driving circuit, is reduced. That is, it is preferable to minimize the thickness of the driving substrate 11 within the range where the driving circuit section can be provided.

[0113] By reducing the thickness of the driving substrate 11, the heat generated by the LED element 10 can be easily transferred to the heat dissipation substrate 12. In other words, efficient heat dissipation can be achieved. Furthermore, by thinning the driving substrate 11, the thermal stress generated at the boundary between the driving substrate 11 and the heat dissipation substrate 12 can be reduced, thereby suppressing warping of the driving substrate 11 and the heat dissipation substrate 12, faults caused by wiring cutting, and degradation of the image quality of the image obtained by the light-emitting device 100A.

[0114] Furthermore, by thinning the driving substrate 11, the driving substrate 11 and the heat dissipation substrate 12 can be easily and directly bonded. Moreover, by thinning the driving substrate 11, even when the aforementioned bonding layer is disposed between the driving substrate 11 and the heat dissipation substrate 12, the increase in the size of the light-emitting device 100A can be suppressed.

[0115] For example, when the heat dissipation substrate 12 comprises aluminum nitride (AlN), the driving substrate 11 and the heat dissipation substrate 12 are surface-activated and bonded. Furthermore, when the heat dissipation substrate 12 comprises copper (Cu), such as... Figure 6 As illustrated, a copper (Cu) bonding layer 51 can be situated between the driving substrate 11 and the heat dissipation substrate 12. The bonding layer 51 and the heat dissipation substrate 12 are directly bonded via a Cu-Cu bonding process. Furthermore, if the heat dissipation substrate 12 comprises aluminum nitride (AlN), as shown... Figure 7As illustrated, from the driving substrate 11 side, a first bonding layer 52 and a second bonding layer 53 may be located between the driving substrate 11 and the heat dissipation substrate 12. The first bonding layer 52 comprises, for example, copper (Cu). The second bonding layer 53 comprises, for example, a silver (Ag)-copper (Cu)-titanium (Ti) based soldering material, and is formed on the heat dissipation substrate 12 in the form of a layer. The first bonding layer 52 and the second bonding layer 53 are surface-activated and bonded. Before surface-activated bonding, the bonding surfaces may be subjected to chemical mechanical polishing (CMP) treatment.

[0116] <Fourth Embodiment>

[0117] Next, a fourth embodiment will be described. It should be noted that in the description of the fourth embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise specified, matters described in other embodiments may be applied to the fourth embodiment.

[0118] Figure 8 A is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100B) according to the fourth embodiment. Figure 8 B is a view of the light-emitting device 100B from the light-emitting side (as seen in the plan view). Note that in Figure 8 In B, the illustration of the light-emitting device 100B is appropriately simplified.

[0119] In the light-emitting device 100B, through-holes 61 are formed in the driving substrate 11. Although the number and location of the through-holes 61 can be appropriately varied, in this embodiment, in the cross-sectional view of the light-emitting device 100B, the through-holes 61 are formed between the LED elements 10. The upper side of the through-holes 61 is connected to the protective layer 13. The lower side of the through-holes 61 is connected to the heat-dissipating substrate 12 via a common layer 62, which is a layer structure shared by each through-hole 61. In this embodiment, the common layer 62 serves as a bonding layer. Note that in the light-emitting device 100B, the driving substrate 11 is thinned similarly to that in the light-emitting device 100A. Therefore, the through-holes 61 can be easily formed.

[0120] Each through-hole 61 is filled with a thermally conductive material to form a filling portion 63. For example, metals such as copper (Cu), aluminum (Al), gold (Au), and silver (Ag), or their compounds, can be used as the thermally conductive material constituting the filling portion 63. The aforementioned common layer 62 also includes the same thermally conductive material as the thermally conductive material constituting the filling portion 63. The materials constituting the heat dissipation substrate 12 and the thermally conductive material constituting the filling portion 63 can be the same or different. For example, if the heat dissipation substrate 12 includes copper (Cu), and the thermally conductive material constituting the filling portion 63 includes the same copper (Cu), then the connection between the heat dissipation substrate 12 and the filling portion 63 can be Cu-Cu bonded, and the connection can be firmly and easily bonded.

[0121] An example of a manufacturing method for the light-emitting device 100B will be described. First, as... Figure 9 As shown in Figure A, LED elements 10, etc., are formed on the first surface 11A of the driving substrate 11, and then, as shown in Figure A... Figure 9 As shown in Figure B, the cover glass 14 is bonded to the protective layer 13. Then, as... Figure 9 As shown in Figure C, polishing and the like are performed to thin the drive substrate 11.

[0122] Next, as Figure 10 As illustrated in Figure A, the driving substrate 11 is partially removed by etching or other methods to form multiple through holes 61. Then, as shown in Figure A... Figure 10 As illustrated in Figure B, a plating process (e.g., copper (Cu) plating process) is performed from the second surface 11B side of the driving substrate 11 to form the filling portion 63. Then, a CMP process is performed on the underside of the portion formed by the plating process, thereby... Figure 10 A common layer 62 is formed as shown in Figure C. Finally, the common layer 62 and the heat dissipation substrate 12 are combined to complete the process. Figure 8 The light-emitting device 100B shown in the figure.

[0123] Another example of a manufacturing method for the light-emitting device 100B will be described. In the manufacturing method according to this example, the heat dissipation substrate 12 is first bonded. First, as... Figure 11 As shown in Figure A, prepare the driving substrate 11, and then, as... Figure 11 As illustrated in Figure B, a temporary substrate 65 is bonded to the first surface 11A of the driving substrate 11. Then, as... Figure 11 As illustrated in Figure C, polishing and the like are performed to thin the drive substrate 11. Then, as... Figure 11 As shown in Figure D, the driving substrate 11 is partially removed by etching or other means, thereby forming a plurality of through holes 61.

[0124] Next, as Figure 12As illustrated in Figure A, a plating process (e.g., copper (Cu) plating process) is performed from the second surface 11B side of the driving substrate 11 to form the filling portion 63. Then, a CMP process is performed on the underside of the portion formed by the plating process, thereby... Figure 12 As illustrated in Figure B, a shared layer 62 is formed. Then, as... Figure 12 As shown in Figure C, the common layer 62 and the heat dissipation substrate 12 are joined together.

[0125] Next, as Figure 13 As illustrated in Figure A, the temporary substrate 65 is peeled off. Then, as... Figure 13 As shown in Figure B, LED elements 10, etc., are formed on the first surface 11A of the driving substrate 11. Finally, as shown in Figure B... Figure 13 As shown in Figure C, the cover glass 14 is joined to complete the light-emitting device 100B. The light-emitting device 100B can also be manufactured by the above manufacturing method.

[0126] Note that the light-emitting device 100B, as Figure 14 The diagram also shows a structure without the shared layer 62. In this case, the through-hole 61 and the filling portion 63 formed in the drive substrate 11 are directly connected to the heat dissipation substrate 12.

[0127] <Fifth Embodiment>

[0128] Next, the fifth embodiment will be described. It should be noted that in the description of the fifth embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise specified, matters described in other embodiments may apply to the fifth embodiment.

[0129] Figure 15 A is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100C) according to the fifth embodiment. Figure 15 B is a view (plan view) of the light-emitting device 100C as seen from the light-emitting side. Note that in Figure 15 In B, the illustration of the light-emitting device 100C is appropriately simplified.

[0130] In each LED element 10 included in the light-emitting device 100C, unlike the light-emitting device 100, a stacked structure including a first compound semiconductor layer 21, a light-emitting layer 23, and a second compound semiconductor layer 22 is formed at a slightly shifted position. For example, in... Figure 15 In the cross-sectional view of the light-emitting device 100C shown in Figure A, the stacked structure is formed at a position slightly to the right relative to the first compound semiconductor layer 21.

[0131] The light-emitting device 100C includes a through-hole penetrating the driving substrate 11. In this embodiment, the through-hole penetrates not only the driving substrate 11 but also the protective layer 13. A through-hole is formed for each LED element 10. For example, a through-hole 68R is formed as a through-hole corresponding to LED element 10R. The through-hole 68R includes a filling portion 69R inside. The filling portion 69R includes a thermally conductive material, and the same material constituting the filling portion 63 can be used as the thermally conductive material. Furthermore, a through-hole 68G is formed as a through-hole corresponding to LED element 10G. The through-hole 68G includes a filling portion 69G inside. The filling portion 69G includes a thermally conductive material, and the same material constituting the filling portion 63 can be used as the thermally conductive material. Furthermore, a through-hole 68B is formed as a through-hole corresponding to LED element 10B. The through-hole 68B includes a filling portion 69B inside. The filling portion 69B includes a thermally conductive material, and the same material constituting the filling portion 63 can be used as the thermally conductive material.

[0132] Using the structure of the light-emitting device 100C described above, the heat generated when each LED element 10 emits light can be transferred to the heat sink substrate 12 via the filling portions 69R, 69G, and 69B. Since the through holes and filling portions are configured to correspond to each LED element 10, the heat generated when each LED element 10 emits light can be effectively transferred to the heat sink substrate 12.

[0133] Note that via 68R may or may not contact the first compound semiconductor layer 21. Furthermore, via 68R may or may not contact the heat dissipation substrate 12. That is, penetrating the driving substrate 11 means that the via can be formed from either the first surface 11A or the second surface 11B of the driving substrate 11 to the interior, and does not necessarily need to reach the other surface. However, from the viewpoint of improving heat dissipation, it is preferable that the fill portion 69R in via 68R contacts the heat dissipation substrate 12. In this case, since there is a possibility of short circuit depending on the material of the fill portion 69R, the heat dissipation substrate 12 preferably comprises an insulating material. This similarly applies to via 68G and fill portion 69G, and via 68B and fill portion 69B.

[0134] <Sixth Embodiment>

[0135] Next, a sixth embodiment will be described. It should be noted that in the description of the sixth embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may apply to the sixth embodiment.

[0136] Figure 16 A is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100D) according to the sixth embodiment. Figure 16B is a view of the light-emitting device 100D as seen from the light-emitting side (in a plan view). Note that in Figure 16 In section B, the illustration of the light-emitting device 100D has been appropriately simplified.

[0137] In the light-emitting device 100D, a common wiring portion 41 is formed on the entire second surface 14B of the cover glass 14. Furthermore, a through-hole 71 is formed in the outer edge portion (near the outer edge) of the light-emitting device 100D. For example, the through-hole 71 penetrates the driving substrate 11 and the protective layer 13. The upper side of the through-hole 71 contacts the common wiring portion 41, and the lower side of the through-hole 71 contacts the heat dissipation substrate 12.

[0138] The through-hole 71 includes a filling portion 72 therein. The filling portion 72 includes a thermally conductive material. Examples of thermally conductive materials include the same material constituting the filling portion 63. Using the structure of the light-emitting device 100D described above, the heat generated when each LED element 10 emits light can be transferred to the heat dissipation substrate 12 via the filling portion 72, and can be dissipated in the heat dissipation substrate 12. According to this embodiment, the heat dissipation substrate 12 is constructed, for example, an insulating heat dissipation substrate.

[0139] <Seventh Embodiment>

[0140] Next, a seventh embodiment will be described. It should be noted that in the description of the seventh embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may apply to the seventh embodiment.

[0141] Figure 17 A is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100E) according to this embodiment. Figure 17 B is a view (plan view) of the light-emitting device 100E as seen from the light-emitting side. Note that in Figure 17 In section B, the illustration of the light-emitting device 100E is appropriately simplified. This embodiment is an example in which the first electrode 31 and the second electrode 32 are deployed on one side (the lower side) of the LED element 10.

[0142] The light-emitting device 100E includes a through-hole 73 formed in the outer edge of the light-emitting device 100E, a filling portion 74 filling the through-hole 73, and a common wiring portion 75 formed on the first surface 11A of the driving substrate 11. The filling portion 74 includes a thermally conductive material. The same material constituting the filling portion 73 can be used as an example of a thermally conductive material. The common wiring portion 75 includes the same material as the filling portion 74 (e.g., copper (Cu)). For example, the filling portion 74 and the common wiring portion 75 can be formed by forming the through-hole 73 in the driving substrate 11 and then performing a plating process. The first electrode 31R, the first electrode 31G, and the first electrode 31B are connected to the common wiring portion 75. The heat dissipation substrate 12 according to this embodiment is constructed of, for example, an insulating heat dissipation substrate.

[0143] Using the structure of the light-emitting device 100E described above, the heat generated when each LED element 10 emits light can be transferred to the heat dissipation substrate 12 through the common wiring portion 75 and the filling portion 74, and can be dissipated in the heat dissipation substrate 12.

[0144] <Eighth Embodiment>

[0145] Next, the eighth embodiment will be described. It should be noted that in the description of the eighth embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may apply to the eighth embodiment.

[0146] Figure 18 A is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of the light-emitting device (light-emitting device 100F) according to the eighth embodiment. Figure 18 B is a view of the light-emitting device 100F as seen from the light-emitting side (in a plan view). Note that in Figure 18 In section B, the illustration of the light-emitting device 100F has been appropriately simplified.

[0147] This embodiment is an embodiment related to the light-emitting device 100F, wherein, compared with the light-emitting device 100A described in the second embodiment, a ground wiring pattern 81 connected to the ground of the driving substrate 11 is further formed.

[0148] The light-emitting device 100F includes a through-hole 82 formed in the outer edge of the light-emitting device 100F. A ground wiring pattern 81 is formed from the first surface 11A of the driving substrate 11 into the through-hole 82. The ground wiring pattern 81 includes a thermally conductive material. The same material constituting the filling portion 63 can be exemplified as the thermally conductive material. Each LED element 10 is connected to the ground wiring pattern 81. For example, LED element 10R is connected to the ground wiring pattern 81 via a connection portion 81R that is part of the ground wiring pattern 81. Furthermore, LED element 10G is connected to the ground wiring pattern 81 via a connection portion 81G that is part of the ground wiring pattern 81. Additionally, LED element 10B is connected to the ground wiring pattern 81 via a connection portion 81B that is part of the ground wiring pattern 81. The ground wiring pattern 81 does not conduct heat for each LED element 10, but only with high resistance. Utilizing the structure according to the light-emitting device 100F, the heat emitted by each LED element 10 is also transferred to the heat dissipation substrate 12, thereby achieving efficient heat dissipation.

[0149] <Ninth Embodiment>

[0150] Next, the ninth embodiment will be described. It should be noted that in the description of the ninth embodiment, the same or homogeneous constructions described above are indicated by the same reference numerals, and redundant descriptions will be appropriately omitted. Furthermore, unless otherwise stated, matters described in other embodiments may apply to the ninth embodiment.

[0151] Figure 19 This is a cross-sectional schematic diagram illustrating an example of the cross-sectional structure of a light-emitting device (light-emitting device 100G) according to the ninth embodiment. The light-emitting device 100G includes a wiring pattern 85. The wiring pattern 85 includes a first wiring pattern 85A extending in the Z direction and formed at the outer edge of the light-emitting device 100G in the cross-sectional view, and a second wiring pattern 85B extending in the X direction and integrally formed with the first wiring pattern 85A in the cross-sectional view. The second wiring pattern 85B is located between the driving substrate 11 and the heat dissipation substrate 12. In this embodiment, the second wiring pattern 85B serves as a bonding layer.

[0152] The wiring pattern 85 has a relationship similar to, for example, the cathode wiring pattern (specifically, the pattern of the shared wiring portion 41 and wiring portion 42). By also forming the wiring pattern 85 on the driving substrate 11, the heat generated when the LED element 10 emits light can be transferred to the heat dissipation substrate 12 through the wiring pattern 85 and dissipated. The wiring resistance can be further reduced.

[0153] <Application Example>

[0154] (Electronic devices)

[0155] The light-emitting device according to the above embodiments can be installed in various electronic devices. The light-emitting device is particularly suitable for devices requiring high resolution and close-to-the-eye magnification, such as electronic viewfinders of video cameras or SLR cameras, or head-mounted displays.

[0156] (Concrete example 1)

[0157] Figure 20 A and Figure 20 Figure B illustrates an example of the appearance of a digital still camera 310. The digital still camera 310 is a single-lens reflex type with interchangeable lenses, and includes an interchangeable imaging lens unit (interchangeable lens) 312 at approximately the center of the front of the camera body (camera body) 311, as well as a grip portion 313 on the left side of the front for a person to hold and capture the image.

[0158] The monitor 314 is positioned offset to the left from the center of the back of the camera body 311. An electronic viewfinder (eyepiece window) 315 is positioned above the monitor 314. By observing the electronic viewfinder 315, a person can determine the composition by visually recognizing the optical image of the subject guided by the imaging lens unit 312. The electronic viewfinder 315 includes the aforementioned light-emitting device.

[0159] (Concrete example 2)

[0160] Figure 21 An example of the appearance of a head-mounted display 320 is illustrated. The head-mounted display 320 includes ear loops 322, for example, on both sides of a display unit 321 in the shape of glasses, to be worn on the user's head. The display unit 321 includes the aforementioned light-emitting device.

[0161] (Concrete example 3)

[0162] Figure 22 An example of the appearance of a television device 330 is illustrated. The television device 330 includes, for example, a video display screen unit 331, which includes a front panel 332 and a filter glass 333, and the video display screen unit 331 includes the aforementioned light-emitting device.

[0163] (Concrete example 4)

[0164] Figure 23 An example of the appearance of a see-through head-mounted display 340 is illustrated. The see-through head-mounted display 340 includes a main body 341, an arm 342, and a lens barrel 343.

[0165] The main body 341 is connected to the arm 342 and the glasses 350. Specifically, the end of the main body 341 in the long side direction is coupled to the arm 342, and one side of the main body 341 is coupled to the glasses 350 via a connecting member. Note that the main body 341 can be directly mounted on the human head.

[0166] The main body 341 houses a control panel and display unit for controlling the operation of the see-through head-mounted display 340. An arm 342 connects the main body 341 and the lens barrel 343, and supports the lens barrel 343. Specifically, the arm 342 is coupled to the ends of the main body 341 and the lens barrel 343, and fixes the lens barrel 343. Furthermore, the arm 342 houses signal lines for transmitting data related to the image to be provided from the main body 341 to the lens barrel 343.

[0167] The lens 343 projects image light from the main body 341 via the arm 342 toward the eyes of the user wearing the see-through head-mounted display 340 through the eyepiece 351. In the see-through head-mounted display 340, the display unit of the main body 341 includes the aforementioned light-emitting device.

[0168] (Concrete example 5)

[0169] Figure 24 The illustration shows an example of the appearance of a smartphone 360. The smartphone 360 ​​includes a display unit 361 that displays various types of information, an operation unit 362 with buttons for receiving user input, etc. The display unit 361 includes the aforementioned light-emitting device.

[0170] (Concrete example 6)

[0171] The light-emitting device can be installed in various displays in the vehicle.

[0172] Figure 25 A and Figure 25 B is a diagram illustrating an example of the interior structure of a vehicle 500 equipped with various displays. Specifically, Figure 25 A is a diagram illustrating an example of the interior state of vehicle 500 from its rear to its front. Figure 25 B is a diagram illustrating an example of the interior state of vehicle 500 from its rear to its front.

[0173] Vehicle 500 includes a central display 501, a console display 502, a head-up display 503, a digital rearview mirror 504, a steering wheel display 505, and a rear entertainment display 506. At least one of these displays includes the aforementioned light-emitting device. For example, all of these displays may include the aforementioned light-emitting device.

[0174] The central display 501 is positioned in the dashboard facing the driver's seat 508 and the passenger seat 509. Figure 25 A and Figure 25 Figure B illustrates an example of a central display 501 with a horizontally elongated shape extending from the driver's seat 508 side to the passenger seat 509 side; however, the screen size and arrangement of the central display 501 are arbitrary. The central display 501 can display information detected by various sensors. As specific examples, the central display 501 can display images captured by an image sensor, distance images of obstacles in front of or to the sides of the vehicle 500 measured by a time-of-flight (ToF) sensor, passenger body temperature detected by an infrared sensor, etc. The central display 501 can be used to display at least one of, for example, safety-related information, operational-related information, lifestyle logs, health-related information, authentication / identification-related information, and entertainment-related information.

[0175] Safety-related information includes information such as drowsiness detection, gaze deviation detection, child mischief detection, seatbelt wearing detection, and occupant exit detection, and is sensed by sensors arranged, for example, overlapping the rear side of the central display 501. Operation-related information is obtained by detecting occupant postures related to their actions using sensors. Sensed postures can include the operation of various types of equipment in vehicle 500. For example, the operation of air conditioning, navigation, audiovisual (AV) devices, lighting, etc., can be detected. A life log includes the life logs of all occupants. For example, the life log includes a record of each occupant's movements in the vehicle. By acquiring and storing the life logs, the occupant's condition at the time of an accident can be confirmed. Health-related information uses sensors such as temperature sensors to sense the occupant's body temperature and estimates the occupant's health status based on the sensed body temperature. Alternatively, an image sensor can be used to capture the occupant's face, and the occupant's health status can be estimated from the captured facial expressions. Furthermore, the occupant can be spoken to automatically using voice, and the occupant's health status can be estimated based on the content of the responses received. Authentication / identification related information includes information about keyless entry functions that use sensors to perform facial authentication and functions that automatically adjust seat height and position via facial recognition. Entertainment related information includes functions that use sensors to detect occupant operation information of AV devices, and functions that use sensors to recognize occupant faces and provide content suitable for occupant via AV devices.

[0176] The console display 502 can be used to display, for example, log information. The console display 502 is positioned near the gearshift lever 511 of the center console 510 between the driver's seat 508 and the passenger seat 509. The console display 502 can also display information detected by various sensors. Furthermore, the console display 502 can display images of the vehicle's surroundings taken by image sensors, or images showing the distances to obstacles present around the vehicle.

[0177] The head-up display 503 is virtually displayed behind the windshield 512 in front of the driver's seat 508. The head-up display 503 can be used to display at least one of, for example, safety-related information, operational-related information, lifestyle logs, health-related information, authentication / identification-related information, and entertainment-related information. Since the head-up display 503 is virtually positioned in front of the driver's seat 508 in many situations, it is suitable for displaying information directly related to the operation of the vehicle 500, such as the vehicle's speed, remaining fuel (battery) level, etc.

[0178] The digital rearview mirror 504 can not only display the rear of the vehicle 500, but also the status of the occupants in the rear seat. Therefore, for example, sensors can be arranged in an overlapping manner on the back side of the digital rearview mirror 504 to display life log information.

[0179] A steering wheel display 505 is positioned near the center of the steering wheel 513 in vehicle 500. The steering wheel display 505 can be used to display at least one of the following: safety-related information, operational-related information, daily log information, health-related information, authentication / identification-related information, and entertainment-related information. In particular, due to its proximity to the driver's hands, the steering wheel display 505 is suitable for displaying daily log information such as the driver's body temperature, or for displaying information regarding the operation of AV devices, air conditioning equipment, etc.

[0180] The rear entertainment display 506 is attached to the rear side of the driver's seat 508 or passenger seat 509 and is for viewing / listening by occupants in the rear seats. The rear entertainment display 506 can be used to display at least one of the following: safety-related information, operational-related information, daily logs, health-related information, authentication / identification-related information, and entertainment-related information. Specifically, since the rear entertainment display 506 is located in front of the occupants in the rear seats, information relevant to the occupants is displayed on the rear entertainment display. For example, information regarding the operation of AV devices or air conditioning equipment may be displayed, or the results of measuring the body temperature of the occupants in the rear seats using a temperature sensor may be displayed.

[0181] Sensors can be deployed to overlap with the back side of a light-emitting device to measure the distance to objects present in the surrounding environment. Optical distance measurement methods are broadly classified into passive and active types. Passive methods measure distance by receiving light from the object without projecting light from the sensor onto it. Passive methods include lens focusing, stereo methods, and monocular vision methods. Active methods measure distance by projecting light onto the object and receiving the reflected light from the object using a sensor. Examples of active methods include optical radar, active stereo methods, illuminance difference stereo methods, moiré topography, and interferometry. Light-emitting devices can be used in any of these types of distance measurements. The aforementioned passive or active distance measurements can be performed by using a sensor deployed to overlap with the back side of the light-emitting device.

[0182] <Variation Example>

[0183] Although embodiments of the present disclosure have been described in detail above, the content of the present disclosure is not limited to the above embodiments, and various modifications can be made based on the technical concept of the present disclosure. Modifications will be described below.

[0184] The constructions, methods, processes, shapes, materials, and values ​​described in the embodiments and variations are merely examples, and different constructions, methods, processes, shapes, materials, and values ​​may be used as needed. Furthermore, unless otherwise specified, the materials illustrated in the embodiments and variations may be used alone or in combination of two or more.

[0185] In addition, the present disclosure may also employ the following construction. (1)

[0187] A light-emitting device, comprising:

[0188] Multiple light-emitting elements;

[0189] A driving substrate, the driving substrate including a driving circuit section for driving the light-emitting element; and

[0190] A heat dissipation substrate, which is directly bonded to the drive substrate. (2)

[0192] According to the light-emitting device described in (1), wherein,

[0193] The thickness of the driving substrate is less than the thickness of the heat dissipation substrate. (3)

[0195] According to the light-emitting device described in (2), wherein,

[0196] The driving substrate is thinned except for the driving circuit section. (4)

[0198] The light-emitting device according to any one of (1) to (3), wherein,

[0199] The coefficient of thermal expansion of the heat dissipation substrate is greater than or equal to the coefficient of thermal expansion of the driving substrate. (5)

[0201] According to the light-emitting device described in (4), wherein,

[0202] The heat dissipation substrate includes thermally conductive metal. (6)

[0204] The light-emitting device according to any one of (1) to (3), wherein,

[0205] The coefficient of thermal expansion of the heat dissipation substrate is essentially equal to that of the driving substrate. (7)

[0207] According to the light-emitting device described in (6), wherein,

[0208] The heat dissipation substrate includes non-conductive components. (8)

[0210] The light-emitting device according to any one of (1) to (7), wherein,

[0211] A through-hole is formed that penetrates the drive substrate, and the through-hole is filled with a thermally conductive material. (9)

[0213] According to the light-emitting device described in (8), wherein,

[0214] The through hole is connected to the heat dissipation substrate. (10)

[0216] According to the light-emitting device described in (8), wherein,

[0217] A bonding layer, comprising the thermally conductive material, is formed on the surface of the heat dissipation substrate side of the driving substrate. This bonding layer connects to the through-hole and includes the thermally conductive material.

[0218] The heat dissipation substrate is connected to the bonding layer. (11)

[0220] According to the light-emitting device described in (8), wherein,

[0221] Each of the light-emitting elements includes a first electrode and a second electrode.

[0222] This includes a common wiring portion to which the first electrode of each of the light-emitting elements is connected, and

[0223] The through-hole is connected to the common wiring section. (12)

[0225] According to the light-emitting device described in (8), wherein,

[0226] The through-hole is directly connected to each of the light-emitting elements. (13)

[0228] The light-emitting device according to (1) further includes

[0229] A grounding wiring pattern, which is connected to the light-emitting element and includes a thermally conductive material.

[0230] The grounding wiring pattern and the heat dissipation substrate are directly joined to each other at their outer edges. (14)

[0232] The light-emitting device according to any one of (1) to (13), wherein,

[0233] The driving substrate and the heat dissipation substrate are directly bonded to each other. (15)

[0235] The light-emitting device according to any one of (1) to (14), wherein,

[0236] The surface of the driving substrate to be bonded to the heat dissipation substrate is planarized. (16)

[0238] An electronic device comprising a light-emitting device according to any one of (1) to (15).

[0239] List of reference numerals

[0240] 10 LED components

[0241] 11. Driver substrate

[0242] 12 Heat dissipation substrate

[0243] 31 First Electrode

[0244] 32 Second electrode

[0245] 41 Common cabling section

[0246] Through holes 61, 68, and 71

[0247] 62 Shared Layer

[0248] 85 Grounding wiring pattern

[0249] 100, 100A to 100G light-emitting devices

Claims

1. A light-emitting device, comprising: Multiple light-emitting elements; A driving substrate, the driving substrate including a driving circuit section for driving the light-emitting element; as well as A heat dissipation substrate, which is directly bonded to the drive substrate.

2. The light-emitting device according to claim 1, wherein, The thickness of the driving substrate is less than the thickness of the heat dissipation substrate.

3. The light-emitting device according to claim 2, wherein, The driving substrate is thinned except for the driving circuit section.

4. The light-emitting device according to claim 1, wherein, The coefficient of thermal expansion of the heat dissipation substrate is greater than or equal to the coefficient of thermal expansion of the driving substrate.

5. The light-emitting device according to claim 4, wherein, The heat dissipation substrate includes thermally conductive metal.

6. The light-emitting device according to claim 1, wherein, The coefficient of thermal expansion of the heat dissipation substrate is essentially equal to that of the driving substrate.

7. The light-emitting device according to claim 6, wherein, The heat dissipation substrate includes non-conductive components.

8. The light-emitting device according to claim 1, wherein, A through-hole is formed that penetrates the drive substrate, and the through-hole is filled with a thermally conductive material.

9. The light-emitting device according to claim 8, wherein, The through hole is connected to the heat dissipation substrate.

10. The light-emitting device according to claim 8, wherein, A bonding layer, comprising the thermally conductive material, is formed on the surface of the heat dissipation substrate side of the driving substrate. This bonding layer connects to the through-hole and includes the thermally conductive material. The heat dissipation substrate is connected to the bonding layer.

11. The light-emitting device according to claim 8, wherein, Each of the light-emitting elements includes a first electrode and a second electrode. This includes a common wiring portion to which the first electrode of each of the light-emitting elements is connected, and The through-hole is connected to the common wiring section.

12. The light-emitting device according to claim 8, wherein, The through-hole is directly connected to each of the light-emitting elements.

13. The light-emitting device according to claim 1, further comprising: A grounding wiring pattern is connected to the light-emitting element and includes a thermally conductive material. The grounding wiring pattern and the heat dissipation substrate are directly joined to each other at their outer edges.

14. The light-emitting device according to claim 1, wherein... The driving substrate and the heat dissipation substrate are directly bonded to each other.

15. The light-emitting device according to claim 1, wherein... Planarization is performed on the surface of the drive substrate to be bonded to the heat dissipation substrate.

16. An electronic device comprising the light-emitting device according to claim 1.

Images