A magnetic confinement microwave remote plasma source device, system, and method of use

Abstract

The application belongs to the technical field of remote plasma source, and discloses a magnetic confinement microwave remote plasma source device, a system and a use method. The magnetic confinement microwave remote plasma source device comprises: a plasma reaction cavity; a microwave generation and transmission assembly for generating microwaves and coupling the microwaves into the plasma reaction cavity; a gas homogenizing component for homogenizing process gas input into the plasma reaction cavity; and a magnetic field confinement assembly comprising at least three coil units arranged along an axial direction of the plasma reaction cavity and arranged around the plasma reaction cavity. The magnetic field confinement assembly is used for forming a symmetric power configuration by inputting currents into the coil units, thereby forming a magnetic confinement ring in the plasma reaction cavity to confine plasma in a central region of the plasma reaction cavity, so as to improve plasma density, reduce physical sputtering corrosion, improve process uniformity and equipment service life.

Description

A magnetically confined microwave remote plasma source device, system, and method of use. Technical Field

[0001] This application relates to the field of remote plasma source technology, and more specifically, to a magnetically confined microwave remote plasma source device, system, and method of use. Background Technology

[0002] In the field of high-end semiconductor manufacturing and materials processing, remote plasma source technology, as a key means of semiconductor manufacturing and materials processing, has long faced many technical bottlenecks.

[0003] Traditional inductively coupled plasma (ICP) and capacitively coupled plasma (FCP) sources generally suffer from insufficient plasma density under low-pressure conditions. Due to the short mean free path of electrons within the reaction chamber, the probability of collisions with gas molecules is significantly reduced, making it difficult to improve the dissociation rate of process gases and directly affecting the rates of thin film deposition and etching processes. Simultaneously, the high-energy particles generated by these traditional plasma sources continuously bombard the inner walls of the reaction chamber during operation, causing severe physical sputtering corrosion. This not only increases the risk of particulate contamination but also significantly shortens the lifespan of core components. Regarding process uniformity, existing technologies exhibit significant limitations. As wafer sizes increase to 300mm and above, traditional plasma sources struggle to maintain a stable plasma spatial distribution in large reaction chambers, frequently exhibiting edge effects and localized concentration inhomogeneities, directly impacting process consistency and product yield. Furthermore, existing systems have poor adaptability to different process gases, especially when handling highly electronegative gases, often resulting in plasma instability and reduced process repeatability. Another prominent issue is insufficient energy coupling efficiency. Traditional designs have inherent defects in microwave transmission and impedance matching, leading to significant energy loss and hindering precise process control. These technological shortcomings collectively constrain the further development of high-end semiconductor manufacturing processes, necessitating innovative technological breakthroughs.

[0004] To address the aforementioned issues, existing technologies urgently need improvement. Summary of the Invention

[0005] The purpose of this application is to provide a magnetically confined microwave remote plasma source device, system and method of use, which has the advantages of increasing plasma density, reducing physical sputtering corrosion, improving process uniformity and equipment service life.

[0006] In a first aspect, this application provides a magnetically confined microwave remote plasma source device, comprising:

[0007] A plasma reaction chamber is used to provide the physical space for process gases to undergo gas ionization reactions.

[0008] A microwave generating and transmitting component is used to generate microwaves and couple the microwaves into the plasma reaction chamber to provide an energy source for gas ionization.

[0009] A gas homogenizer is disposed at the air inlet of the plasma reaction chamber and is used to homogenize the process gas input into the plasma reaction chamber.

[0010] A magnetic field confinement assembly includes at least three coil units spaced apart along the axial direction of the plasma reaction cavity, the coil units being arranged around the outside of the plasma reaction cavity; the magnetic field confinement assembly is used to form a symmetrical power configuration by inputting current to each of the coil units, thereby forming a magnetic confinement ring within the plasma reaction cavity to confine the plasma to the central region of the plasma reaction cavity; the symmetrical power configuration means that, along the axial direction of the plasma reaction cavity, the power of each coil unit gradually increases from both sides to the middle, and the power of each coil unit is symmetrically distributed along this axial direction.

[0011] Secondly, this application provides a magnetically confined microwave remote plasma source system, including a gas source component, a programmable DC power supply, a pressure control component, a central control device, and the aforementioned magnetically confined microwave remote plasma source device; the gas source component is used to supply process gas to the magnetically confined microwave remote plasma source device; each coil unit of the magnetically confined microwave remote plasma source device is electrically connected to the programmable DC power supply, which is used to independently regulate the power of each coil unit; the pressure control component is located at the outlet of the plasma reaction chamber of the magnetically confined microwave remote plasma source device and is used to regulate the gas pressure of the plasma reaction chamber; the central control device is used to coordinately regulate the microwave generation and transmission component, the gas source component, the programmable DC power supply, and the pressure control component of the magnetically confined microwave remote plasma source device.

[0012] Thirdly, this application provides a method for using the magnetically confined microwave remote plasma source system described above, comprising the following steps:

[0013] A1. Based on the structural parameters of the magnetically confined microwave remote plasma source device, determine the symmetrical power configuration parameters of each coil unit that can form a magnetic confinement ring in the plasma reaction cavity to confine the plasma in the central region of the plasma reaction cavity;

[0014] A2. Based on the balance between comprehensive power deposition efficiency, ionization collision frequency, and reactant concentration and plasma residence time, determine the optimal parameter combination of microwave power output by microwave generation and transmission components, gas pressure in plasma reaction chamber, and process gas flow rate within the corresponding preset range.

[0015] A3. Control the operating parameters of the programmable DC power supply according to the symmetrical power configuration parameters, and adjust the operating parameters of the microwave generating and transmitting component, the gas source component, and the pressure control component according to the optimal parameter combination.

[0016] Beneficial effects: The magnetic confinement microwave remote plasma source device, system and usage method provided in this application include a plasma reaction cavity, a microwave generation and transmission component, a gas homogenizer and a magnetic field confinement component. The magnetic field confinement component forms a magnetic confinement ring in the plasma reaction cavity to confine the plasma in the central region, thereby improving plasma density, reducing physical sputtering corrosion, improving process uniformity and equipment service life. Attached Figure Description

[0017] Figure 1 is a side view of a magnetically confined microwave remote plasma source device provided in this application.

[0018] Figure 2 is a side view and a top view of a magnetically confined microwave remote plasma source device provided in this application.

[0019] Figure 3 is a cross-sectional view of position AA in Figure 2.

[0020] Figure 4 is a schematic diagram of a magnetically confined microwave remote plasma source system provided in this application.

[0021] Figure 5 is a flowchart of the usage method provided in this application.

[0022] Labeling Explanation: 100, Magnetic Confinement Microwave Remote Plasma Source Device; 200, Gas Source Assembly; 300, Programmable DC Power Supply; 400, Pressure Control Assembly; 500, Central Control Device; 1, Plasma Reaction Chamber; 101, Inlet Section; 102, Main Body Section; 2, Microwave Generating and Transmitting Assembly; 201, Microwave Power Source; 202, Waveguide; 203, Impedance Matching Unit; 204, Microwave Cavity; 3, Gas Uniformer; 4, Magnetic Field Confinement Assembly; 401, Coil Unit; 5, Stainless Steel Housing; 6, Gas Cylinder; 7, Flow Controller; 8, Pressure Sensor; 9, Vortex Molecular Pump. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0024] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0025] Please refer to Figures 1-3. A magnetically confined microwave remote plasma source device 100, according to some embodiments of this application, includes:

[0026] Plasma reaction chamber 1 is used to provide the physical space for the process gas to undergo gas ionization reaction;

[0027] Microwave generating and transmitting component 2 is used to generate microwaves and couple them into plasma reaction chamber 1 to provide an energy source for gas ionization.

[0028] The gas homogenizer 3 is disposed at the gas inlet of the plasma reaction chamber 1 and is used to homogenize the process gas input into the plasma reaction chamber 1.

[0029] The magnetic field confinement assembly 4 includes at least three coil units 401 arranged at intervals along the axial direction of the plasma reaction cavity 1, with the coil units 401 surrounding the outside of the plasma reaction cavity 1. The magnetic field confinement assembly 4 is used to form a symmetrical power configuration by inputting current to each coil unit 401, thereby forming a magnetic confinement ring within the plasma reaction cavity 1 to confine the plasma within the central region of the plasma reaction cavity 1. The symmetrical power configuration means that the power of each coil unit 401 gradually increases from both sides to the middle along the axial direction of the plasma reaction cavity 1, and the power of each coil unit 401 is symmetrically distributed along this axial direction.

[0030] This embodiment provides a magnetically confined microwave remote plasma source device 100, which aims to solve the problems of insufficient plasma density, poor process uniformity, and severe equipment corrosion of traditional plasma sources under low pressure conditions.

[0031] The plasma reaction chamber 1 primarily functions to provide the physical space for the process gas to undergo ionization reactions. The material and dimensions of this chamber can be adjusted according to the specific application; for example, it can be made of quartz and have a diameter of 200 mm to provide sufficient reaction volume.

[0032] Microwave generation and transmission component 2 is used to generate microwaves and couple them into the plasma reaction chamber 1, providing an energy source for gas ionization. Microwave generation can be achieved in various ways, such as using a magnetron or a solid-state microwave source. Microwave transmission is achieved through waveguide 202 to ensure efficient coupling of microwave energy into the plasma reaction chamber 1. The microwave frequency and power can be adjusted according to process requirements; for example, a microwave frequency of 2.45 GHz or 915 MHz can be used, and the power can be adjusted within a certain range.

[0033] A gas homogenizer 3 is disposed at the gas inlet of the plasma reaction chamber 1 and is used to homogenize the process gas input into the plasma reaction chamber 1. The gas homogenizer 3 can be implemented in various ways, such as using a perforated plate, a mesh, or a nozzle array. The size and orifice distribution of the gas homogenizer 3 can be optimized according to the type and flow rate of the process gas to ensure that the gas is uniformly distributed before entering the plasma reaction chamber 1.

[0034] The magnetic field confinement assembly 4 includes at least three coil units 401 spaced apart along the axial direction of the plasma reaction cavity 1, which are arranged around the outside of the plasma reaction cavity 1. The number of coil units 401 can be selected according to the desired magnetic field configuration and confinement effect; for example, three, five, or more coil units 401 can be used. The coil units 401 can be arranged at equal intervals or at non-equal intervals to achieve a specific magnetic field gradient. The magnetic field confinement assembly 4 forms a symmetrical power configuration by inputting current to each coil unit 401, thereby forming a magnetic confinement ring within the plasma reaction cavity 1 to confine the plasma to the central region of the plasma reaction cavity 1. The symmetrical power configuration means that along the axial direction of the plasma reaction cavity 1, the power of each coil unit 401 gradually increases from both sides to the middle, and the power of each coil unit 401 is symmetrically distributed along this axial direction. For example, the magnetic field confinement component 4 may include five coil units 401, from top to bottom, whose power configuration can be set as coil 1 5W, coil 2 8W, coil 3 12W, coil 4 8W, and coil 5 5W, to form a magnetic confinement ring with the strongest central magnetic field strength.

[0035] In actual operation, process gases (such as a mixture of Ar and CF4) are uniformly introduced into the plasma reaction chamber 1 through the gas equalization component 3. Microwave energy is coupled into the chamber, ionizing gas molecules to form plasma. Due to the magnetic confinement ring formed by the magnetic field confinement component 4, the plasma is confined to the central region of the chamber, reducing the contact between the plasma and the chamber walls. This not only reduces the bombardment of the chamber walls by high-energy particles, thus significantly reducing the risk of physical sputtering corrosion and particulate contamination, but also extends the service life of the core components of the equipment. At the same time, the magnetic confinement effect improves the density and uniformity of the plasma, enabling the acquisition of high-density plasma even under low-pressure conditions, thereby improving the dissociation rate of the process gases and ensuring etching rate and uniformity. The gas equalization component 3 further ensures the uniform distribution of gas within the chamber, working synergistically with the magnetic confinement to solve the problem of uneven plasma distribution, thus ensuring the consistency of wafer etching and product yield.

[0036] This magnetically confined microwave remote plasma source device 100 effectively solves the problems of insufficient plasma density, poor process uniformity, and severe equipment corrosion caused by traditional plasma sources under low-pressure conditions through its unique technical concept. Compared with traditional inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) sources, the device of this application provides efficient energy coupling through the microwave generation and transmission component 2, combined with the symmetrical power configuration formed by the magnetic field confinement component 4, to precisely confine the plasma in the central region of the reaction cavity. This confinement mechanism significantly reduces the interaction between the plasma and the cavity wall, thereby reducing the risk of physical sputtering corrosion and particulate contamination, and extending the equipment life. In addition, the introduction of the gas homogenizer 3 ensures the uniform distribution of process gas before entering the reaction cavity, which, in synergy with the magnetic confinement, further improves the spatial uniformity of the plasma and overcomes the limitation of traditional plasma sources in maintaining a stable plasma distribution in large reaction cavities. Through the synergistic effect of the above technical features, the device of this application can achieve high-density, high-uniformity plasma under low-pressure conditions, providing a more stable and efficient solution for the fields of high-end semiconductor manufacturing and materials processing.

[0037] In some embodiments, as shown in Figures 2 and 3, the gas equalization component 3 is a gas equalization disk, on which a plurality of gas equalization holes are evenly opened through both ends of the gas equalization disk.

[0038] The proposed solution embodies the gas equalization component 3 as a gas equalization disk, on which multiple gas equalization holes are uniformly formed, penetrating both ends. This allows the process gas entering the plasma reaction chamber 1 to be fully and uniformly pre-distributed. When the process gas passes through the gas equalization disk, it is forcibly dispersed through the multiple uniformly distributed gas equalization holes, thereby forming a uniform gas flow field before entering the plasma reaction chamber 1. This uniform gas flow field, in conjunction with the magnetic confinement ring formed by the magnetic field confinement component 4 in the central region of the plasma reaction chamber 1, ensures that the confined plasma continuously receives a uniform supply of process gas. This not only avoids the problem of uneven local gas concentration that may exist in traditional gas equalization components 3, but also provides the necessary gas environment for the stable generation and uniform distribution of plasma, thereby effectively improving the uniformity and consistency of plasma processing.

[0039] In some embodiments, as shown in Figures 1 and 2, the microwave generating and transmitting component 2 includes a microwave power source 201, a waveguide 202, an impedance matching unit 203, and a microwave cavity 204; the waveguide 202 is connected between the microwave power source 201 and the microwave cavity 204 and is used to transmit the microwaves generated by the microwave power source 201 into the microwave cavity 204; the impedance matching unit 203 is disposed in the waveguide 202 and is used to adjust the transmission impedance of the microwaves; the plasma reaction cavity 1 passes through the microwave cavity 204 and is made of a material that can transmit microwaves.

[0040] As the energy source, the microwave power source 201 is responsible for generating high-frequency electromagnetic waves, i.e., microwaves. Its function is to provide the necessary energy input for the subsequent gas ionization process. The microwave power source 201 can be implemented using various technologies, such as magnetrons, klystrons, or solid-state microwave sources. These devices can convert electrical energy into microwave energy of a specific frequency. The waveguide 202 is a transmission structure used to guide and transmit microwave energy. It is typically made of a metal tube, forming an internal channel for electromagnetic wave propagation. The function of the waveguide 202 is to efficiently transmit the microwave energy generated by the microwave power source 201 from the source end to the load end (i.e., microwave cavity 204), ensuring directional energy flow and reducing transmission losses. The waveguide 202 can take the form of a rectangular waveguide, a circular waveguide, or a coaxial line; for example, in Figures 1 and 2, a rectangular waveguide is used.

[0041] Impedance matching unit 203 is a key component installed in the microwave transmission path. Its main function is to adjust the matching degree between the characteristic impedance of the microwave transmission line and the load impedance. By adjusting the impedance matching unit 203, microwave reflection during transmission can be minimized, thereby improving the coupling efficiency of microwave energy to the load (the plasma in the plasma reaction cavity 1). Common impedance matching units 203 include three-pin tuners (as shown in Figures 1 and 2), sliding short circuit devices, tuning screws, or automatic impedance matching devices.

[0042] Microwave cavity 204 is a closed metallic cavity used to contain and guide microwave energy, enabling it to interact effectively with the gas within plasma reaction cavity 1. Microwave cavity 204 is designed to form a standing wave field or traveling wave field to optimize microwave energy distribution and coupling efficiency. Microwave cavity 204 can be designed in rectangular, circular, or more complex geometries to suit different application requirements. Plasma reaction cavity 1 is the physical space where the gas ionization reaction occurs. To enable microwave energy to effectively penetrate the cavity walls and act on the internal gas, the cavity must be made of a microwave-transparent material. This material should have low dielectric loss and good high-temperature and corrosion resistance. Common microwave-transparent materials include quartz, alumina ceramics, sapphire, or special glass.

[0043] The solution presented in this application achieves efficient and stable coupling of microwave energy to the process gas within the plasma reaction cavity 1 through a cleverly designed microwave generation and transmission component 2. Specifically, a microwave power source 201 serves as the energy starting point, responsible for generating microwaves of a specific frequency and power. This microwave energy is then precisely guided to the microwave cavity 204 via a waveguide 202. In the microwave transmission path, an impedance matching unit 203 is strategically placed within the waveguide 202. Its core function is to monitor and adjust the impedance of the microwave transmission line in real time, matching it with the dynamic impedance of the plasma within the plasma reaction cavity 1. This dynamic matching mechanism significantly reduces microwave reflection loss during transmission, ensuring that the vast majority of microwave energy can smoothly enter the microwave cavity 204. The plasma reaction cavity 1 itself is made of a microwave-transmissible material, allowing microwaves to penetrate the cavity walls without obstruction and directly act on the process gas within the cavity. The microwave energy interacts with the gas molecules within the plasma reaction cavity 1 within the microwave cavity 204, inducing ionization of the gas molecules and thereby generating plasma. Based on this, and combined with the overall architecture of the magnetically confined microwave remote plasma source device 100, the efficient energy coupling provided by the microwave generation and transmission component 2 enables the plasma reaction chamber 1 to stably generate high-density plasma. The magnetic field confinement component 4, through its coil units 401 spaced along the axial direction of the plasma reaction chamber 1, forms a symmetrical power configuration, constructing a magnetic confinement ring within the plasma reaction chamber 1. This magnetic confinement ring effectively confines the plasma generated by microwave energy ionization to the central region of the plasma reaction chamber 1, avoiding direct contact between the plasma and the chamber walls, thereby reducing wall recombination losses and contamination caused by particle bombardment. The gas homogenizer 3 ensures that the process gas is uniformly distributed before entering the plasma reaction chamber 1, creating conditions for sufficient contact and uniform ionization between microwave energy and gas molecules. Therefore, the efficient energy coupling of the microwave generation and transmission component 2 and the plasma confinement function of the magnetic field confinement component 4 work together to ensure high density, high uniformity, and low contamination of the plasma, providing a stable and reliable plasma source for subsequent semiconductor manufacturing and material processing processes.

[0044] In some embodiments, as shown in Figures 2 and 3, the microwave cavity 204 and the plasma reaction cavity 1 are coaxially arranged in a cylindrical shape, and the coil unit 401 is arranged around the outside of the microwave cavity 204.

[0045] In this design, the microwave cavity 204 and the plasma reaction cavity 1 are coaxially arranged cylindrical structures. This technical feature describes the geometric relationship and shape between the microwave cavity 204 and the plasma reaction cavity 1. "Coaxial arrangement" means that their central axes coincide to ensure symmetry in energy transmission; "cylindrical" means that both have cylindrical structures. As one implementation, the microwave cavity 204 can be a hollow cylindrical structure, while the plasma reaction cavity 1 is a smaller-diameter cylindrical tubular structure that passes through the center of the microwave cavity 204 and is aligned with its axis. This design aims to optimize the propagation path of microwave energy within the cavity, ensuring that energy is uniformly coupled into the process gas within the plasma reaction cavity 1.

[0046] Furthermore, the coil units 401 are arranged around the outside of the microwave cavity 204, a technical feature that clearly defines the arrangement of the coil units 401 in the magnetic field confinement assembly 4. "Around" means that the coil units 401 are distributed circumferentially around the outside of the microwave cavity 204. In practice, due to the presence of the waveguide 202, the coil units 401 are typically C-shaped, as shown in Figure 2. As one implementation, the coil units 401 can be directly wound around the outer surface of the microwave cavity 204, or fixed to the outside of the microwave cavity 204 by an insulating support structure. Alternatively, the coil units 401 can be encapsulated in a separate housing, which is then fitted over the microwave cavity 204, maintaining a certain gap between the housing and the cavity. This arrangement allows the magnetic field generated by the coil units 401 to effectively penetrate the walls of the microwave cavity 204 and act on the plasma reaction chamber 1 inside, thereby achieving magnetic confinement of the plasma.

[0047] The proposed solution designs the microwave cavity 204 and the plasma reaction cavity 1 as coaxially arranged cylinders, with the coil unit 401 surrounding the outside of the microwave cavity 204. This allows the microwaves generated by the microwave generating and transmitting components 2 to enter the plasma reaction cavity 1 in a highly symmetrical manner. The cylindrical geometry itself has good spatial symmetry, which minimizes reflection and standing wave effects when microwaves propagate axially or radially, thereby ensuring uniform distribution of microwave energy within the plasma reaction cavity 1 and avoiding local energy concentration or attenuation. This is crucial for achieving uniform ionization of the process gas, improving the uniformity of plasma formation, and enhancing energy coupling efficiency. Simultaneously, the coil unit 401 of the magnetic field confinement component 4 surrounds the outside of the microwave cavity 204, allowing its generated magnetic field to directly and effectively penetrate the walls of the microwave cavity 204 and act on the interior of the plasma reaction cavity 1. This external arrangement strengthens the confinement of the plasma without interfering with the microwave transmission path. The formation of the magnetic field confinement ring can stably concentrate the plasma in the central region of the plasma reaction cavity 1, preventing the plasma from diffusing to the cavity edge, thereby reducing the bombardment of the cavity wall by high-energy particles, reducing physical sputtering corrosion, and further improving the plasma density and uniformity. Through the above structural optimization, the effective coupling of microwave energy and the precise confinement of the magnetic field are synergistically achieved. The coaxial cylindrical design of the microwave cavity 204 and the plasma reaction cavity 1 provides an ideal physical environment for the uniform transmission of microwaves and the symmetrical generation of plasma; while the arrangement of the coil unit 401 around the microwave cavity 204 ensures that the magnetic field can act efficiently on this region, effectively confining the generated plasma. This integrated design allows microwave energy to be converted into plasma energy more efficiently, while the plasma is precisely confined to the target region, thereby significantly improving the overall performance and reliability of the plasma source.

[0048] In some preferred embodiments, as shown in Figure 2, the plasma reaction chamber 1 includes an inlet section 101 and a main body section 102. The inner diameter of the inlet section 101 is smaller than that of the main body section 102 (e.g., the inner diameter of the inlet section 101 is 30 mm, and the inner diameter of the main body section 102 is 200 mm). The gas equalization element 3 is disposed at the end of the inlet section 101 away from the main body section 102, and the main body section 102 passes through the microwave cavity 204. This concentrates the gas flow entering the main body section 102 more in the central region of the main body section 102. Under the action of the magnetic field confinement ring, the plasma can be more stably concentrated in the central region of the main body section 102, preventing the plasma from diffusing to the edge of the main body section 102, thereby further reducing the bombardment of the cavity wall of the main body section 102 by high-energy particles and reducing physical sputtering corrosion.

[0049] Preferably, as shown in Figures 1-3, the portion of the plasma reaction chamber 1 exposed outside the microwave cavity 204 can be fitted with a stainless steel shell 5, and the stainless steel shell 5 is connected and fixed to the microwave cavity 204.

[0050] The portion of the plasma reaction chamber 1 exposed outside the microwave cavity 204 refers to the area within the plasma reaction chamber 1 that extends beyond the physical boundary of the microwave cavity 204. This area is typically where process gases enter or exit, or where plasma leaves the main excitation region. The stainless steel housing 5 refers to installing or covering this exposed portion with a protective shell made of stainless steel. Stainless steel is chosen for its excellent corrosion resistance, mechanical strength, and high-temperature resistance, enhancing the structural strength of the exposed portion and extending its service life. Besides stainless steel, other materials with similar protective properties can be used, such as ceramic-coated metals or nickel-based high-temperature alloys. The connection and fixation of the stainless steel housing 5 to the microwave cavity 204 signifies a robust mechanical connection between them, ensuring no displacement or loosening during equipment operation. This connection can be achieved through various methods, including bolted flange connections, welding, clamp fixing, or threaded connections, to ensure structural stability and airtightness.

[0051] In actual operation, the plasma reaction chamber 1 of the magnetically confined microwave remote plasma source device 100 generates plasma under the action of the microwave generating and transmitting component 2. Since a portion of the plasma reaction chamber 1 extends beyond the microwave cavity 204, this exposed cavity wall is directly exposed to the plasma environment and is easily damaged. To address this issue, this application provides a stainless steel housing 5 over the portion of the plasma reaction chamber 1 exposed beyond the microwave cavity 204 for safety protection. Simultaneously, the stainless steel housing 5 is fixedly connected to the microwave cavity 204, ensuring the stability and reliability of the entire protective structure and preventing loosening due to vibration or thermal expansion and contraction, thus maintaining its protective effect. Furthermore, the plasma reaction chamber 1 and the stainless steel housing 5, as well as the stainless steel housing 5 and the microwave cavity 204, can be detachably connected. This allows the plasma reaction chamber 1 to be operated independently when maintenance or replacement is required, without disassembling the entire microwave generating and transmitting component 2, greatly improving the maintenance efficiency and convenience of the equipment. In this way, this application not only effectively suppresses corrosion and particulate contamination of the plasma reaction chamber 1, but also optimizes the overall maintainability of the equipment.

[0052] The number of coil units 401 can be set according to actual needs. For example, in some embodiments, the magnetic field confinement component 4 includes five coil units 401.

[0053] When the magnetic field confinement assembly 4 contains only three coil units 401, although a magnetic confinement ring can be formed, the limited number of coils restricts the controllability of the magnetic field gradient in the axial direction of the plasma reaction cavity 1. This may result in an unsatisfactory shape and strength of the magnetic confinement ring, making it difficult to guarantee the uniformity of plasma distribution in the axial direction. By increasing the number of coil units 401 to five, the magnetic field confinement assembly 4 gains a stronger magnetic field shaping capability. These five coil units 401 are arranged at intervals along the axial direction of the plasma reaction cavity 1 and surround the outside of the plasma reaction cavity 1. Under a symmetrical power configuration, i.e., from both sides to the middle, the power of each coil unit 401 gradually increases and is symmetrically distributed. The five coil units 401 can provide more magnetic field superposition points and more refined magnetic field distribution adjustment capabilities. This increased degree of freedom allows the magnetic field confinement assembly 4 to more accurately construct and optimize the shape and strength of the magnetic confinement ring. By independently or collaboratively controlling the current of the five coil units 401, a smoother and more uniform magnetic field gradient change can be achieved, thereby forming a more symmetrical and stable magnetic confinement ring. This magnetic confinement ring can more effectively confine the plasma to the central region of the plasma reaction chamber 1, reducing plasma contact with the chamber walls and minimizing wall loss and contamination. Simultaneously, more precise magnetic field control helps optimize the spatial distribution of the plasma, making it more uniform in both the axial and radial directions, thereby improving the process gas dissociation rate and reaction efficiency.

[0054] Referring to Figure 4, this application also provides a magnetic confinement microwave remote plasma source system, including a gas source component 200, a programmable DC power supply 300, a pressure control component 400, a central control device 500, and the aforementioned magnetic confinement microwave remote plasma source device 100; the gas source component 200 is used to supply process gas to the magnetic confinement microwave remote plasma source device 100; each coil unit 401 of the magnetic confinement microwave remote plasma source device 100 is electrically connected to the programmable DC power supply 300, which is used to independently regulate the power of each coil unit 401; the pressure control component 400 is located at the outlet of the plasma reaction chamber 1 of the magnetic confinement microwave remote plasma source device 100 and is used to regulate the gas pressure of the plasma reaction chamber 1; the central control device 500 is used to coordinate and regulate the microwave generation and transmission component 2 (mainly referring to the microwave power source 201 therein), the gas source component 200, the programmable DC power supply 300, and the pressure control component 400 of the magnetic confinement microwave remote plasma source device 100.

[0055] The system includes a gas supply assembly 200, which supplies process gas to the magnetically confined microwave remote plasma source device 100. The gas supply assembly 200 precisely regulates the gas flow rate through a mass flow controller 7 to ensure a stable gas supply, supporting continuous gas ionization and dissociation processes, thereby improving gas adaptability and process stability.

[0056] The programmable DC power supply 300 is electrically connected to each coil unit 401 of the magnetically confined microwave remote plasma source device 100, and is used to independently control the power of each coil unit 401. The number of coil units 401 can be selected according to the required magnetic field configuration, for example, three, five or more coil units 401. The coil units 401 can be arranged at equal intervals or at non-equal intervals to achieve a specific magnetic field gradient. By forming a symmetrical power configuration, the programmable DC power supply 300 generates a magnetic confinement ring within the plasma reaction chamber 1, confining the plasma to the central region of the chamber. For example, for a configuration of five coil units 401, the power distribution from top to bottom—coil 1 (5W), coil 2 (8W), coil 3 (12W), coil 4 (8W), and coil 5 (5W)—can effectively enhance the magnetic field strength in the central region.

[0057] The pressure control component 400 is located at the outlet of the plasma reaction chamber 1 and is used to precisely adjust the gas pressure of the plasma reaction chamber 1 to meet the required low gas pressure process conditions, promote the collision frequency of electrons and gas molecules, and optimize energy utilization efficiency.

[0058] The central control unit 500 is used to coordinate and regulate the microwave generation and transmission component 2, the gas source component 200, the programmable DC power supply 300, and the pressure control component 400. The central control unit 500 receives process parameter commands and synchronously adjusts the output frequency of the microwave power source 201, the gas flow rate of the gas source component 200, the coil power configuration of the programmable DC power supply 300, and the target gas pressure value of the pressure control component 400 to ensure that the parameters of each component are matched, thereby improving the overall energy coupling efficiency and process repeatability.

[0059] This magnetically confined microwave remote plasma source system effectively solves the problems of insufficient plasma density, poor process uniformity, and severe equipment corrosion caused by traditional plasma sources under low-pressure conditions through its unique technical concept. Compared with traditional inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) sources, the system of this application provides efficient energy coupling through the microwave generation and transmission component 2, combined with a symmetrical power configuration formed by a programmable DC power supply 300, precisely confining the plasma to the central region of the reaction chamber. This confinement mechanism significantly reduces the interaction between the plasma and the chamber walls, thereby reducing the risk of physical sputtering corrosion and particulate contamination, and extending the equipment life. In addition, the introduction of the gas homogenizer 3 ensures the uniform distribution of process gas before entering the reaction chamber, which, in synergy with magnetic confinement, further improves the spatial uniformity of the plasma, overcoming the limitation of traditional plasma sources in maintaining a stable plasma distribution in large reaction chambers. Through the synergistic effect of the above technical features, the system of this application can achieve high-density, high-uniformity plasma under low-pressure conditions, providing a more stable and efficient solution for the fields of high-end semiconductor manufacturing and materials processing.

[0060] Preferably, the central control device 500 is configured to coordinate and regulate the following operating parameters:

[0061] The microwave power output of the microwave generator and transmission component 2 is controlled to be in the range of 500W to 2000W.

[0062] The pressure control component 400 regulates the gas pressure inside the plasma reaction chamber 1 within the range of 0.1 Pa to 10 Pa;

[0063] The control gas source component 200 regulates the flow rate of the process gas within the range of 1 sccm to 100 sccm.

[0064] The central control unit 500 is the core intelligent unit of the entire magnetic confinement microwave remote plasma source system. Its function is to centrally manage and coordinate the control of multiple key components within the system. Its configuration for collaboratively regulating operating parameters means that the device can monitor in real time and dynamically adjust the operating status of each component based on preset process targets or feedback information to ensure the stability and optimization of the entire plasma generation and processing process. For example, the central control unit 500 can be an industrial PC integrated with dedicated control software, or an embedded system based on a microcontroller or FPGA, exchanging data and transmitting commands with various subsystems through various communication interfaces (such as RS-232, Ethernet, CAN bus, etc.). Microwave power is the key energy input for plasma ionization and maintenance. Controlling the microwave power output from the microwave generation and transmission component 2 within the range of 500W to 2000W aims to provide sufficient energy for efficient ionization of the process gas, forming a high-density plasma, while avoiding equipment overload, plasma instability, or unnecessary side reactions due to excessive power. This control can be achieved by adjusting the output power of the microwave power source 201, for example, by adjusting the input voltage or current of the magnetron or solid-state microwave source, or by setting an adjustable attenuator in the microwave transmission path to precisely control the microwave energy reaching the plasma reaction chamber 1. The gas pressure in the plasma reaction chamber 1 has a decisive influence on the plasma characteristics (such as electron temperature, electron density, particle mean free path, collision frequency, etc.). Adjusting the gas pressure in the plasma reaction chamber 1 to a low pressure range of 0.1 Pa to 10 Pa by the pressure control component 400 is beneficial for achieving high ionization efficiency and a long mean free path, reducing particle loss at the chamber walls, and promoting plasma confinement in the central region. The pressure control component 400 can be achieved by adjusting the pumping speed of the vacuum pump or by introducing inert gas for back pressure control, for example, by controlling the rotation speed of the vortex molecular pump 9 or by adjusting the coordinated operation of the gas flow controller 7 and the vacuum valve to maintain a stable gas pressure in the chamber. The flow rate of the process gas directly affects the concentration and residence time of the reactants in the plasma reaction chamber 1, and thus affects the chemical reaction rate and product distribution of the plasma. The gas supply assembly 200 regulates the flow rate of the process gas within the range of 1 sccm to 100 sccm to ensure a sufficient supply of reactive gas to sustain the plasma reaction, while avoiding excessive flow leading to low gas utilization or insufficient flow leading to insufficient reactants. The gas supply assembly 200 typically uses a flow controller 7 (such as a mass flow controller 7MFC) to precisely regulate the gas input rate. This controller, based on instructions from the central control unit 500, maintains the set gas flow rate via internal sensors and actuators.

[0065] The solution in this application uses a central control device 500 to precisely and range-limitedly regulate the microwave power, gas pressure in the plasma reaction chamber 1, and flow rate of the process gas in the magnetically confined microwave remote plasma source system, thereby ensuring the stability and efficiency of the plasma generation process. Specifically, the central control device 500 acts as the "brain" of the system, uniformly managing the microwave generation and transmission component 2, the pressure control component 400, and the gas source component 200. By limiting the microwave power to a specific range of 500W to 2000W, the central control device 500 ensures sufficient energy for the ionization of the process gas, while avoiding instability caused by excessive power leading to equipment overheating or plasma over-excitation. Furthermore, the central control device 500 precisely controls the gas pressure in the plasma reaction chamber 1 within a low-pressure range of 0.1Pa to 10Pa. This is crucial for optimizing the mean free path and collision frequency of electrons, helping to form a high-density, highly active plasma, and, in conjunction with the magnetic field confinement component 4, effectively confining the plasma to the central region, reducing interaction with the cavity walls. Simultaneously, the central control unit 500 also regulates the flow rate of the process gas, maintaining it within the range of 1 sccm to 100 sccm. This ensures a reasonable balance between reactant concentration and plasma residence time, guaranteeing the continuous reaction and uniform product distribution. This collaborative control mechanism means that individual operating parameters no longer operate in isolation but are managed as a whole. For example, when the microwave power increases, the central control unit 500 may correspondingly fine-tune the gas pressure or flow rate to maintain the stable state of the plasma and optimal process conditions. Conversely, when the type or flow rate of the process gas changes, the central control unit 500 can also dynamically adjust the microwave power and gas pressure to adapt to new process requirements. This parameter range limitation based on plasma physics characteristics enables the central control unit 500 to achieve precise control of the plasma source, effectively avoiding problems such as plasma instability, low energy coupling efficiency, and poor process uniformity caused by improper parameter settings. In this way, the solution of this application can significantly improve the overall performance and reliability of the magnetic confinement microwave remote plasma source system, providing a more stable and controllable plasma environment for high-end semiconductor manufacturing and material processing.

[0066] In some embodiments, the gas source assembly 200 includes a gas cylinder 6 and a flow controller 7.

[0067] Cylinder 6 is a container for storing high-pressure gases, designed to safely hold process gases in compressed or liquefied states. Cylinder 6 can be made of various materials, such as high-strength steel, aluminum alloy, or composite materials, to accommodate different gas storage requirements and pressure levels. As the initial supply source of process gases, cylinder 6 ensures the system has a sufficient and stable gas reserve. Flow controller 7 is a precision device used to measure and precisely regulate the flow rate of fluids (such as process gases) to achieve a preset flow rate value. Flow controller 7 can employ various operating principles, such as a thermal effect-based mass flow controller 7, which determines the mass flow rate by measuring the heat carried away by the fluid and uses a feedback loop to precisely control the valve opening; or a differential pressure-based volumetric flow controller 7. Flow controller 7 is particularly critical in semiconductor processes because it ensures that process gases enter the reaction chamber at a highly stable and repeatable rate, thereby maintaining the accuracy of process conditions. When the process gas is a mixed gas, multiple gas cylinders 6 can be set up accordingly, and each gas cylinder 6 stores one gas component of the mixed gas. At this time, the flow controller 7 is configured to independently adjust the output flow of each gas cylinder 6 (for example, the flow controller 7 includes a mixing ratio control valve), thereby accurately adjusting the gas component ratio and total flow of the mixed gas.

[0068] The present application constructs a precise and stable process gas supply system by integrating the gas cylinder 6 and the flow controller 7 into the gas source assembly 200. The gas cylinder 6, as a storage unit for the process gas, provides a continuous and sufficient gas source. The flow controller 7 is responsible for precisely regulating the flow rate of the process gas from the gas cylinder 6. In a magnetically confined microwave remote plasma source system, the flow rate of the process gas is one of the key parameters affecting plasma density, uniformity, and reaction efficiency. Through the flow controller 7, the flow rate of the process gas can be precisely set and maintained according to process requirements, ensuring that the amount of gas entering the plasma reaction chamber 1 is stable and controllable. This precise gas flow control, in conjunction with the energy provided by the microwave generator and transmission assembly 2 and the magnetic confinement ring formed by the magnetic field confinement assembly 4, enables the plasma to be stably formed and maintained in the central region of the plasma reaction chamber 1, thereby optimizing the uniformity and stability of the plasma. Furthermore, in the entire magnetically confined microwave remote plasma source system, the central control device 500 can coordinately regulate the gas source assembly 200 (including the flow controller 7), the microwave generator and transmission assembly 2, and the pressure control assembly 400. This coordinated control capability, combined with the precise gas flow provided by the gas source component 200, enables the system to flexibly adjust various operating parameters according to different process requirements, thereby achieving refined control of the plasma process and significantly improving the repeatability of the process and adaptability to different process gases.

[0069] In some embodiments, the pressure control assembly 400 includes a pressure sensor 8 and a vortex molecular pump 9.

[0070] The pressure sensor 8 is a device used to measure gas pressure, and its function is to monitor the pressure changes within the plasma reaction chamber 1 in real time. As a specific implementation, the pressure sensor 8 can be a capacitive pressure sensor, which reflects pressure by measuring changes in capacitance, offering high accuracy and stability, and is particularly suitable for precise measurements in low-pressure environments. Alternatively, the pressure sensor 8 can also be a Pirani vacuum gauge, which reflects pressure by measuring changes in thermal conductivity, and is suitable for monitoring in medium to low vacuum environments.

[0071] The vortex molecular pump 9 is a mechanical vacuum pump that works by using high-speed rotating vortex blades to push gas molecules from the inlet to the outlet, thus achieving efficient gas extraction. The function of the vortex molecular pump 9 is to efficiently remove gas, quickly establishing and maintaining a low-pressure environment within the plasma reaction chamber 1. As a specific implementation, the vortex molecular pump 9 can be a magnetically levitated vortex molecular pump 9. This pump uses magnetic levitation of the rotor, reducing mechanical friction and thus increasing speed and service life, making it suitable for vacuum environments with high cleanliness requirements. Alternatively, the vortex molecular pump 9 can also be an oil-lubricated vortex molecular pump 9. This uses oil film lubrication of the bearings, has a relatively simple structure, and is lower in cost, making it suitable for applications with slightly lower cleanliness requirements.

[0072] The solution in this application integrates a pressure sensor 8 and a vortex molecular pump 9 into a pressure control component 400, achieving precise, rapid, and stable control of the gas pressure within the plasma reaction chamber 1. Specifically, the pressure sensor 8 continuously monitors real-time gas pressure data within the plasma reaction chamber 1 and feeds this data back to the central control device 500. The central control device 500 accurately calculates the required pumping rate based on preset process parameters and the real-time feedback signal from the pressure sensor 8, and sends corresponding control commands to the vortex molecular pump 9. The vortex molecular pump 9 then dynamically adjusts its rotation speed and pumping capacity according to these commands, thereby achieving precise regulation of the gas pressure within the plasma reaction chamber 1. This closed-loop control mechanism ensures that the gas pressure within the plasma reaction chamber 1 can respond rapidly to external changes and be stably maintained within the target low-pressure range, providing the necessary conditions for stable plasma generation and the effective confinement of the plasma by the magnetic confinement ring formed by the magnetic field confinement component 4. This precise air pressure control, in conjunction with the microwave generation and transmission component 2, the gas homogenizer 3, and the magnetic field confinement component 4 of the aforementioned magnetically confined microwave remote plasma source device 100, jointly optimizes the formation, confinement, and uniformity of the plasma, thereby improving the overall process performance.

[0073] Referring to Figure 5, this application also provides a method for using the magnetically confined microwave remote plasma source system described above, including the following steps:

[0074] A1. Based on the structural parameters of the magnetically confined microwave remote plasma source device 100, determine the symmetrical power configuration parameters of each coil unit 401 that can form a magnetic confinement ring in the plasma reaction cavity 1 to confine the plasma in the central region of the plasma reaction cavity 1.

[0075] A2. Based on the balance between comprehensive power deposition efficiency, ionization collision frequency, and reactant concentration and plasma residence time, within the corresponding preset range, determine the optimal parameter combination of microwave power output by microwave generator and transmission component 2, gas pressure in plasma reaction chamber 1, and process gas flow rate.

[0076] A3. Control the operating parameters of the programmable DC power supply 300 according to the symmetrical power configuration parameters, and adjust the operating parameters of the microwave generation and transmission component 2, the gas source component 200 and the pressure control component 400 according to the optimal parameter combination.

[0077] In step A1, a suitable power distribution is set for each coil unit 401 in the magnetic field confinement component 4 through precise calculation or simulation to generate a stable magnetic confinement ring within the plasma reaction chamber 1. This magnetic confinement ring effectively confines the plasma to the central region of the reaction chamber, thereby avoiding direct contact between the plasma and the chamber walls and reducing wall loss and contamination. Specifically, theoretical physics models, such as those based on the Biot-Savart law, can be used to accurately calculate the magnetic field generated by the coil current, and combined with plasma physics principles, to derive the power configuration of each coil unit 401 that satisfies the magnetic confinement conditions. Alternatively, numerical simulation software, such as finite element analysis or computational fluid dynamics tools, can be used to establish a three-dimensional model of the plasma reaction chamber 1 and the coil unit 401, and iterative optimization algorithms can be used to simulate the magnetic field distribution and plasma behavior under different power configurations, thereby determining the optimal symmetric power configuration parameters.

[0078] Step A2 focuses on optimizing key process parameters for plasma generation and reaction to achieve efficient plasma processing. Power deposition efficiency refers to the efficiency of converting microwave energy into plasma energy; ionization collision frequency refers to the frequency of ionization collisions between electrons and gas molecules; and the balance index between reactant concentration and plasma residence time refers to the degree to which the following conditions are met: ensuring sufficient reactant concentration while allowing the reactants to remain in the plasma region for a sufficiently long time to complete the reaction. These indicators can be obtained through real-time sensor monitoring, spectral analysis, or numerical simulation. The preset range refers to the parameter intervals set according to specific process requirements and equipment performance, such as microwave power range, gas pressure range, and gas flow rate range. The optimal parameter combination can be determined through experimental design or response surface methodology to achieve multi-objective optimization, with the weighted sum and maximization of various indicators as the objective. Specifically, microwave power, gas pressure, and gas flow rate can be systematically changed within the preset parameter range, and the corresponding process results can be measured. Then, the optimal parameter combination can be found through statistical analysis. Alternatively, a multiphysics simulation model can be established based on plasma chemical reaction kinetics and transport models to simulate plasma behavior and reaction product generation under different parameter combinations, thereby predicting and determining the optimal process parameters.

[0079] In the step of controlling and adjusting operating parameters, the previously determined optimized parameters are applied to the magnetic confinement microwave remote plasma source system to achieve precise control and coordinated operation of the entire system. This ensures that the plasma source can operate stably under preset optimal conditions. Specifically, this can be achieved through programming of the central control device 500. The central control device 500 receives the previously determined parameters and then controls the current / voltage output of the programmable DC power supply 300, adjusts the microwave power output of the microwave generating and transmitting component 2, controls the flow controller 7 of the gas source component 200, and the vacuum pump of the pressure control component 400 through digital or analog signal outputs, so that they reach the target values. Alternatively, a closed-loop control system can be used. For example, sensors monitor parameters such as gas pressure, microwave reflection power, and plasma density in the plasma reaction chamber 1 in real time, and input these feedback signals to the central control device 500. The central control device 500 dynamically adjusts the operating parameters of each component according to the preset optimal parameters and real-time feedback to maintain the system in the best working state.

[0080] This application's solution achieves precise control of the plasma processing process by optimizing the operation of a magnetically confined microwave remote plasma source system. First, by determining the symmetrical power configuration parameters of each coil unit 401 based on the structural parameters of the magnetically confined microwave remote plasma source device 100, the effective formation of the magnetic confinement ring is ensured, thereby stably confining the plasma within the central region of the plasma reaction chamber 1. This significantly reduces the interaction between the plasma and the chamber walls, lowers wall loss and contamination, and improves the spatial uniformity of the plasma. Second, by comprehensively considering the balance between power deposition efficiency, ionization collision frequency, and reactant concentration and plasma residence time, the optimal parameter combination of microwave power, gas pressure, and process gas flow rate is determined. This enables the microwave generation and transmission component 2 to couple energy into the plasma with optimal efficiency, improving the ionization efficiency and dissociation rate of the process gas, thereby enhancing overall process efficiency and adaptability to different process gases. Finally, based on the determined symmetrical power configuration parameters and the optimal parameter combination, the operating parameters of the programmable DC power supply 300, microwave generation and transmission component 2, gas source component 200, and pressure control component 400 are coordinated and controlled. This coordinated control mechanism ensures that the entire system operates stably under optimal conditions, achieving consistency and real-time performance of parameter settings, thereby guaranteeing the quality and stability of the semiconductor manufacturing process.

[0081] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A magnetically confined microwave remote plasma source device, characterized in that, include: The plasma reaction chamber (1) is used to provide a physical space for the process gas to undergo gas ionization reaction; A microwave generating and transmitting component (2) is used to generate microwaves and couple them into the plasma reaction chamber (1) to provide an energy source for gas ionization; a gas homogenizer (3) is disposed at the gas inlet of the plasma reaction chamber (1) and is used to homogenize the process gas input into the plasma reaction chamber (1); a magnetic field confinement component (4) includes at least three coil units (401) spaced apart along the axial direction of the plasma reaction chamber (1), the coil units (401) being arranged around the outside of the plasma reaction chamber (1); the magnetic field confinement component (4) is used to form a symmetrical power configuration by inputting current into each of the coil units (401), thereby forming a magnetic confinement ring in the plasma reaction chamber (1) to confine the plasma in the central region of the plasma reaction chamber (1); the symmetrical power configuration refers to the arrangement of each coil unit along the axial direction of the plasma reaction chamber (1), from both sides to the middle. The power of unit (401) gradually increases, and the power of each coil unit (401) is symmetrically distributed along the axis; the microwave generating and transmitting component (2) includes a microwave power source (201), a waveguide (202), an impedance matching unit (203), and a microwave cavity (204); the waveguide (202) is connected between the microwave power source (201) and the microwave cavity (204) and is used to transmit the microwave generated by the microwave power source (201) into the microwave cavity (204); the impedance matching unit (203) is disposed in the waveguide (202) and is used to adjust the transmission impedance of the microwave; the plasma reaction cavity (1) passes through the microwave cavity (204), and the plasma reaction cavity (1) is made of a material that can transmit microwaves; the microwave cavity (204) and the plasma reaction cavity (1) are coaxially arranged cylindrical, and the coil unit (401) is arranged around the outside of the microwave cavity (204).

2. The magnetically confined microwave remote plasma source device according to claim 1, characterized in that, The gas equalization component (3) is a gas equalization disk, and a plurality of gas equalization holes are evenly opened on the gas equalization disk, penetrating both ends of the gas equalization disk.

3. The magnetically confined microwave remote plasma source device according to claim 1, characterized in that, The portion of the plasma reaction chamber (1) exposed outside the microwave cavity (204) is fitted with a stainless steel shell (5), and the stainless steel shell (5) is connected and fixed to the microwave cavity (204).

4. A magnetically confined microwave remote plasma source system, characterized in that, The device includes a gas source assembly (200), a programmable DC power supply (300), a pressure control assembly (400), a central control device (500), and a magnetically confined microwave remote plasma source device (100) as described in any one of claims 1-3; the gas source assembly (200) is used to supply process gas to the magnetically confined microwave remote plasma source device (100); each of the coil units (401) of the magnetically confined microwave remote plasma source device (100) is electrically connected to the programmable DC power supply (300), and the programmable DC power supply (300) is used for independent adjustment. The power of each coil unit (401) is controlled; the pressure control component (400) is located at the outlet of the plasma reaction chamber (1) of the magnetic confinement microwave remote plasma source device (100) and is used to adjust the gas pressure of the plasma reaction chamber (1); the central control device (500) is used to coordinately control the microwave generation and transmission component (2), the gas source component (200), the programmable DC power supply (300) and the pressure control component (400) of the magnetic confinement microwave remote plasma source device (100).

5. The magnetically confined microwave remote plasma source system according to claim 4, characterized in that, The central control device (500) is configured to coordinate and regulate the following operating parameters: control the microwave power output by the microwave generating and transmitting component (2) to be in the range of 500W to 2000W; control the pressure control component (400) to adjust the gas pressure in the plasma reaction chamber (1) to be in the range of 0.1Pa to 10Pa; and control the gas source component (200) to adjust the flow rate of the process gas to be in the range of 1sccm to 100sccm.

6. The magnetically confined microwave remote plasma source system according to claim 4, characterized in that, The gas source assembly (200) includes a gas cylinder (6) and a flow controller (7).

7. The magnetically confined microwave remote plasma source system according to claim 4, characterized in that, The pressure control assembly (400) includes a pressure sensor (8) and a vortex molecular pump (9).

8. A method of using a magnetically confined microwave remote plasma source system according to any one of claims 4-7, characterized in that, The steps include: A1. Determine the symmetrical power configuration parameters of each coil unit (401) that can form a magnetic confinement ring in the plasma reaction cavity (1) to confine the plasma in the central region of the plasma reaction cavity (1) according to the structural parameters of the magnetic confinement microwave remote plasma source device (100); A2. Based on the balance between comprehensive power deposition efficiency, ionization collision frequency, and reactant concentration and plasma residence time, within the corresponding preset range, determine the optimal parameter combination of microwave power output by microwave generator and transmission component (2), gas pressure in plasma reaction chamber (1), and flow rate of process gas; A3. Control the operating parameters of programmable DC power supply (300) according to the symmetrical power configuration parameters, and adjust the operating parameters of microwave generator and transmission component (2), gas source component (200), and pressure control component (400) according to the optimal parameter combination.

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