A high-brightness LED device with single-side light emission and a manufacturing method thereof, and a vehicle lamp

Abstract

The application provides a high-brightness LED device with single-side light emission, a preparation method of the high-brightness LED device and a vehicle lamp. The preparation method of the high-brightness LED device comprises the following steps: fixing and connecting a color conversion film and an LED chip to form a light-emitting unit; arranging the light-emitting unit on a bearing plate, wherein the LED chip is located on the side of the color conversion film away from the bearing plate; arranging a dielectric film on the light-emitting unit by using a first adhesive layer, wherein the first adhesive layer is in contact with the back surface of the LED chip; performing deposition coating on the light-emitting unit to form a reflective film on the side wall of the light-emitting unit, the surface and the side of the dielectric film; processing the first adhesive layer to reduce the adhesion of the first adhesive layer to the light-emitting unit; forming a second adhesive layer on the surface of the side of the dielectric film away from the first adhesive layer; and separating the dielectric film from the light-emitting unit by using the adhesion of the second adhesive layer. The high-brightness LED device provided by the application can reduce the high-precision requirement of the equipment in the preparation process and improve the yield.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a single-sided high-brightness LED device and its preparation method, and automotive lighting. Background Technology

[0002] Light-emitting diodes (LEDs) are electroluminescent semiconductor devices. Due to their advantages such as low power consumption, small size, long lifespan, good stability, fast response, and stable emission wavelength, they are now widely used in lighting, display, medical, and optical communication fields.

[0003] Single-sided LED devices offer advantages such as high brightness and strong light collimation. A typical single-sided LED device includes an LED chip for emitting light and a color conversion layer disposed on the top emitting surface of the LED chip. A typical LED chip has a three-dimensional light-emitting structure with five emitting surfaces: a top emitting surface and four side emitting surfaces. To enable single-sided light emission, reflective films need to be formed on the side emitting surfaces of the LED chip and the sidewalls of the color conversion layer. The industry standard is to coat the LED chip and color conversion layer with white adhesive, but this adhesive has low reflectivity and poor heat dissipation. To further improve brightness and address heat dissipation issues, the applicant innovatively uses a deposition coating method to form reflective layers on the side emitting surfaces of the LED chip and the sidewalls of the color conversion layer.

[0004] However, the applicant further discovered that there are two processes for sidewall deposition to form reflective films. Taking LED chips as an example, one method involves first forming reflective films on the top emitting surface and four side emitting surfaces of the LED chip, and then removing the reflective film on the top emitting surface through physical grinding. The other method involves first forming photoresist on the top surface of the LED chip, then forming reflective films on the top emitting surface and four side emitting surfaces, then peeling off the reflective film on the photoresist, and then immersing to remove the photoresist. Both of these methods require extremely high precision equipment, such as high-precision grinding equipment or high-precision wafer setter. Furthermore, both methods are prone to causing a decrease in yield. For example, physical grinding can easily cause localized detachment of the reflective film on the side emitting surfaces, and immersion in organic solvents to remove the photoresist can easily corrode the adhesive layer fixing the LED chip, causing the LED chip to shift and detach.

[0005] Therefore, how to fabricate high-brightness LED devices with single-sided light emission while reducing the high precision requirements of the equipment and ensuring high yield is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0006] This application provides a single-sided high-brightness LED device and its preparation method, as well as a vehicle lamp, which can effectively solve the problems of high equipment precision requirements and low yield of single-sided high-brightness LED devices in related technologies.

[0007] In a first aspect, this application provides a method for fabricating a high-brightness LED device, the method comprising:

[0008] A color conversion film is fixedly connected to an LED chip to form a light-emitting unit, wherein the LED chip includes a main light-emitting surface and a back light surface arranged opposite to each other, and the color conversion film is located on the side of the main light-emitting surface away from the back light surface;

[0009] The light-emitting unit is disposed on a carrier plate, wherein the LED chip is located on the side of the color conversion film away from the carrier plate;

[0010] A dielectric film is disposed on the light-emitting unit using a first adhesive layer, wherein the first adhesive layer is in contact with the backlight surface of the LED chip;

[0011] A reflective film is deposited on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface.

[0012] The first adhesive layer is treated to reduce its adhesion to the light-emitting unit;

[0013] A second adhesive layer is formed on the surface of the dielectric film on the side opposite to the first adhesive layer;

[0014] The dielectric film is peeled off from the light-emitting unit by utilizing the adhesive effect of the second adhesive layer.

[0015] Optionally, the backlight surface of the LED chip is provided with a first pad electrode and a second pad electrode. The first pad electrode and the second pad electrode have different shapes or areas, and the edges of the first pad electrode and the second pad electrode are flush with the edge of the color conversion film.

[0016] Optionally, the surface of the first pad electrode facing away from the main light-emitting surface and the surface of the second pad electrode facing away from the main light-emitting surface are coplanar.

[0017] Optionally, the first adhesive layer includes a heat-sensitive material or a photosensitive material, so that the adhesiveness of the first adhesive layer decreases after heat treatment or light treatment.

[0018] Optionally, the step of processing the first adhesive layer to reduce its adhesion to the light-emitting unit includes:

[0019] The light-emitting unit is baked using a heating stage below the carrier plate to maintain the ambient temperature of the first adhesive layer in the range of 180 to 250°C for 30 to 75 seconds.

[0020] Optionally, in the step of depositing a film on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface, the deposition process temperature is less than 180°C.

[0021] Optionally, the step of processing the first adhesive layer to reduce its adhesion to the light-emitting unit includes:

[0022] An infrared or ultraviolet light is emitted onto the first adhesive layer using a light processing device positioned above the dielectric film, and the first adhesive layer is continuously irradiated for 5 to 20 seconds.

[0023] Optionally, the dielectric film is a transparent sapphire sheet or a transparent alkali-free glass sheet.

[0024] Optionally, the step of processing the first adhesive layer to reduce its adhesion to the light-emitting unit is performed before or after the step of forming a second adhesive layer on the surface of the dielectric film opposite to the first adhesive layer.

[0025] Secondly, this application provides a high-brightness LED device, the high-brightness LED device comprising:

[0026] The LED chip includes a main light-emitting surface and a back light-emitting surface arranged opposite to each other, and a plurality of side light-emitting surfaces connecting the main light-emitting surface and the back light-emitting surface;

[0027] A color conversion film is disposed on the main light-emitting surface of the LED chip;

[0028] A reflective film covers the light-emitting surface of the LED chip and the side surface of the color conversion film;

[0029] The LED chip has a first pad electrode and a second pad electrode on its back surface. The first pad electrode and the second pad electrode have different shapes or areas, and the edges of the first pad electrode and the second pad electrode are flush with the edge of the color conversion film.

[0030] Thirdly, this application provides a vehicle lamp, which includes the high-brightness LED device described above.

[0031] This application provides a high-brightness LED device with single-sided light emission, its fabrication method, and an automotive lamp. The fabrication method of the high-brightness LED device includes: fixing a color conversion film to an LED chip to form a light-emitting unit, wherein the LED chip includes a main light-emitting surface and a back light-emitting surface disposed opposite to each other, and the color conversion film is located on the side of the main light-emitting surface away from the back light-emitting surface; placing the light-emitting unit on a carrier plate, wherein the LED chip is located on the side of the color conversion film away from the carrier plate; using a first adhesive layer to dispose a dielectric film on the light-emitting unit, wherein the first adhesive layer is in contact with the back light-emitting surface of the LED chip; depositing a film on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface; processing the first adhesive layer to reduce the adhesion of the first adhesive layer to the light-emitting unit; forming a second adhesive layer on the surface of the dielectric film on the side away from the first adhesive layer; and using the adhesive effect of the second adhesive layer to peel the dielectric film from the light-emitting unit. The high-brightness LED device provided in this application can reduce the high precision requirements of the equipment in its fabrication process and improve the yield. Attached Figure Description

[0032] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0033] Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5a , Figure 5b , Figure 6 , Figure 7 , Figure 8 These are schematic diagrams showing the structures corresponding to different process steps in the fabrication methods of single-sided high-brightness LED devices provided in some embodiments of this application.

[0034] Figure 9 This is a schematic diagram of the structure of a single-sided high-brightness LED device provided in some embodiments of this application.

[0035] Explanation of reference numerals in the attached figures:

[0036] Light-emitting unit 01; high-brightness LED device 02; LED chip 10; main light-emitting surface 101; backlight surface 102; side light-emitting surface 103; first pad electrode 11; second pad electrode 12; color conversion film 20; carrier plate 30; first adhesive layer 40; dielectric film 50; reflective film 60; second adhesive layer 70; heating stage 80; light processing equipment 90; blue film 100; fixed adhesive layer M1; heat-resistant adhesive layer M2. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0038] The terms "first" and "second" used herein are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0039] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0040] The following disclosure provides many different implementations or examples for carrying out different structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or reference letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0041] In a first aspect, embodiments of this application provide a method for fabricating a high-brightness LED device with single-sided light emission, the method comprising steps S01, S02, S03, S04, S05, S06, and S07.

[0042] Reference Figure 1 Step S01 includes: fixing the color conversion film 20 to the LED chip 10 to form a light-emitting unit 01, wherein the LED chip 10 includes a main light-emitting surface 101 and a back light surface 102 arranged opposite to each other, and the color conversion film 20 is located on the side of the main light-emitting surface 101 away from the back light surface 102.

[0043] Reference Figure 2 Step S02 includes: placing the light-emitting unit 01 on a carrier plate 30, wherein the LED chip 10 is located on the side of the color conversion film 20 away from the carrier plate 30.

[0044] Reference Figure 3 Step S03 includes: using a first adhesive layer 40 to place a dielectric film 50 on the light-emitting unit 01, wherein the first adhesive layer 40 is in contact with the backlight surface 102 of the LED chip 10.

[0045] Reference Figure 4 Step S04 includes: depositing a film on the light-emitting unit 01 to form a reflective film 60 on the sidewall of the light-emitting unit 01, the surface of the dielectric film 50, and the side surface.

[0046] Reference Figure 5a or Figure 5b Step S05 includes: processing the first adhesive layer 40 to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01.

[0047] Reference Figure 6 Step S06 includes forming a second adhesive layer 70 on the surface of the dielectric film 50 on the side opposite to the first adhesive layer 40.

[0048] Reference Figure 7 Step S07 includes: using the adhesive effect of the second adhesive layer 70 to peel the dielectric film 50 from the light-emitting unit 01.

[0049] In the method for preparing a high-brightness LED device provided in this application embodiment, by first fixing the color conversion film 20 to the LED chip 10 to form a light-emitting unit 01, the sidewall coating of the LED chip 10 and the sidewall coating of the color conversion film 20 can be completed in one step in the subsequent deposition coating process, thereby improving process efficiency.

[0050] Furthermore, since the first adhesive layer 40 is in contact with the backlight surface 102 of the LED chip 10 during the step of setting a dielectric film 50 on the light-emitting unit 01, the alignment device can directly use the pattern of the backlight surface 102 of the LED chip 10 as an alignment mark when aligning the dielectric film 50 and the light-emitting unit 01. This makes the alignment of the dielectric film 50 and the light-emitting unit 01 more convenient and accurate, reducing the requirements on the equipment.

[0051] More importantly, this application adds a first adhesive layer 40 with variable viscosity to the light-emitting unit 01. This allows the dielectric film 50 to be fixed to the backlight surface 102 of the LED chip 10 using the fixing effect of the first adhesive layer 40. Furthermore, the dielectric film 50 protects the backlight surface 102 of the LED chip 10 during the deposition process, preventing electrical connection damage caused by direct contact between the backlight surface 102 and the reflective film 60. After the deposition process on the light-emitting unit 01 is completed, the first adhesive layer 40 can be treated to reduce its adhesion to the LED chip 10. Furthermore, with the aid of a second adhesive layer 70 with stronger adhesion, the dielectric film 50, along with the excess reflective film 60, is peeled off from the light-emitting unit 01, thereby preparing a high-brightness LED device with single-sided light emission. This eliminates the need for a high-precision grinding machine to grind and remove the reflective film 60, and also eliminates the need for a high-precision wafer setter to precisely control the arrangement spacing and alignment accuracy of the light-emitting units 01, greatly reducing the high-precision requirements on the equipment. At the same time, it avoids the problems of damage and detachment of the reflective film 60 on the device sidewall caused by physical grinding, as well as the problems of damage to the adhesive layer fixing the LED chip and device displacement and detachment caused by the removal of photoresist by organic solvents, effectively improving the preparation yield of high-brightness LED devices with single-sided light emission.

[0052] Continue to refer to Figures 1 to 3 In some embodiments of this application, the backlight surface 102 of the LED chip 10 is provided with a first pad electrode 11 and a second pad electrode 12. The first pad electrode 11 and the second pad electrode 12 have different shapes or areas, and the edges of the first pad electrode 11 and the second pad electrode 12 are flush with the edge of the color conversion film 20.

[0053] In the method for fabricating a high-brightness LED device provided in this application embodiment, since the first pad electrode 11 and the second pad electrode 12 have different shapes or areas, in the step of using a first adhesive layer 40 to set a dielectric film 50 on the light-emitting unit 01, the first pad electrode 11 or the second pad electrode 12 of the LED chip 10 can be used as an alignment mark to determine the specific position of the light-emitting unit 01, so as to align the dielectric film 50 with the light-emitting unit 01, improve alignment efficiency and accuracy, and thus enable the edge of the dielectric film 50 to be aligned with the edge of the LED chip 10, thereby improving the coating yield of the reflective film 60 during subsequent deposition. Furthermore, since the edges of the first pad electrode 11 and the second pad electrode 12 are flush with the edge of the color conversion film 20, the reflective film 60 covering the side light-emitting surface of the LED chip 10 can be made more regular in shape during the deposition and coating step of the light-emitting unit 01. This is beneficial to improving the coating quality of the reflective film 60 and to facilitating the peeling of the dielectric film 50 and the first adhesive layer 40 from the backlight surface 102 of the LED chip 10.

[0054] In some embodiments of this application, the area of ​​the first pad electrode 11 is larger than the area of ​​the second pad electrode 12. The first pad electrode 11 includes a plurality of separately disposed metal blocks, and the metal blocks are connected to the same semiconductor layer in the LED chip 10. The semiconductor layer can be an N-type semiconductor layer or a P-type semiconductor layer.

[0055] In some embodiments of this application, the area of ​​the first pad electrode 11 is smaller than the area of ​​the second pad electrode 12. The second pad electrode 12 includes a plurality of separately disposed metal blocks, and the metal blocks are connected to the same semiconductor layer in the LED chip 10. The semiconductor layer can be an N-type semiconductor layer or a P-type semiconductor layer.

[0056] Continue to refer to Figures 1 to 3 In some embodiments of this application, the surface of the first pad electrode 11 facing away from the main light-emitting surface 101 and the surface of the second pad electrode 12 facing away from the main light-emitting surface 101 are coplanar.

[0057] In the high-brightness LED device fabrication method provided in this application embodiment, since the surface of the first pad electrode 11 facing away from the main light-emitting surface 101 and the surface of the second pad electrode 12 facing away from the main light-emitting surface 101 are coplanar, it means that the heights of the surfaces of the first pad electrode 11 and the second pad electrode 12 facing away from the main light-emitting surface 101 are consistent. This makes the coating of the first adhesive layer 40 more uniform and the coating thickness easier to control in the step of using the first adhesive layer 40 to set a dielectric film 50 on the light-emitting unit 01. Consequently, it makes it easier to peel the dielectric film 50 together with the first adhesive layer 40 from the backlight surface 102 of the LED chip 10, thereby reducing the processing difficulty of the first adhesive layer 40 and improving process efficiency.

[0058] In some embodiments of this application, step S01 includes: forming a fixed adhesive layer M1 on the color conversion film 20, and then transferring the LED chip 10 onto the fixed adhesive layer M1 to fix the color conversion film 20 and the LED chip 10 together to form a light-emitting unit 01.

[0059] In some embodiments of this application, step S02 includes: forming a heat-resistant adhesive layer M2 on a carrier plate 30, and disposing the light-emitting unit 01 on the heat-resistant adhesive layer M2 on the carrier plate 30.

[0060] In some embodiments of this application, step S03 includes: coating a first adhesive layer 40 onto a dielectric film 50; heating the first adhesive layer 40 to pre-cur it; transferring the dielectric film 50 onto a blue film, with the pre-cured first adhesive layer 40 in contact with the blue film; and using a transfer device to transfer the dielectric film 50 together with the first adhesive layer 40 onto the light-emitting unit 01, and making the first adhesive layer 40 in contact with the backlight surface 102 of the LED chip 10, wherein the dielectric film 50 is kept relatively fixed to the light-emitting unit 01 by the first adhesive layer 40.

[0061] In some embodiments of this application, step S04 includes: depositing a film on the light-emitting unit 01 using a sputtering deposition or atomic layer deposition method to form a reflective film 60 on the sidewalls of the light-emitting unit 01, the surface of the dielectric film 50, and its sides. The reflective film 60 may include a first dielectric layer and a second dielectric layer. The first dielectric layer may be selected from TiO2, Nb2O5, HfO2, Ta2O5, Ag, and Al, and the second dielectric layer may be selected from SiO2, Al2O3, and SiN. x .

[0062] In some embodiments of this application, step S05 includes: heating the first adhesive layer 40 to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01.

[0063] In some embodiments of this application, step S05 includes: baking the light-emitting unit 01 using a heating stage 80 below the carrier plate 30 to maintain the temperature of the first adhesive layer 40 within the range of 180 to 250°C for 30 to 75 seconds. Correspondingly, in step S04, the deposition process temperature is less than 180°C to avoid premature degradation of the adhesion of the first adhesive layer 40 during the deposition process, which would affect product yield.

[0064] In some embodiments of this application, step S05 includes: illuminating the first adhesive layer 40 to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01.

[0065] In some embodiments of this application, step S05 includes: emitting infrared or ultraviolet light onto the first adhesive layer 40 using a light processing device 90 disposed above the dielectric film 50, continuously irradiating the first adhesive layer 40 for 5 to 20 seconds. Accordingly, the dielectric film 50 is a transparent dielectric film 50, such as a transparent sapphire sheet or a transparent alkali-free glass sheet, so that the first adhesive layer 40 can more easily receive the infrared or ultraviolet light during the light irradiation process.

[0066] In some embodiments of this application, the first adhesive layer 40 includes a first adhesive group, which is a pyrolytic adhesive group or a photosensitive adhesive group. The concentration of the first adhesive group disposed on the side of the first adhesive layer 40 near the light-emitting unit 01 is greater than the concentration of the first adhesive group disposed on the side of the first adhesive layer 40 near the dielectric film 50.

[0067] In the high-brightness LED device preparation method provided in this application embodiment, by controlling the concentration of the first adhesive group in different regions, this application can improve the ability of the first adhesive layer 40, together with the dielectric film 50, to be better peeled off from the backlight surface 102 of the LED chip 10, thereby improving the adhesion problem between the first adhesive layer 40 and the high-brightness LED device.

[0068] In some embodiments of this application, in step S06, the material of the second adhesive layer 70 is the same as the material of the heat-resistant adhesive layer M2.

[0069] In some embodiments of this application, the order of steps S05 and S06 can be reversed. For example, the first adhesive layer 40 can be processed first to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01, and then a second adhesive layer 70 can be formed on the surface of the dielectric film 50 away from the first adhesive layer 40. Alternatively, the second adhesive layer 70 can be formed on the surface of the dielectric film 50 away from the first adhesive layer 40, and then the first adhesive layer 40 can be processed to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01.

[0070] In some embodiments of this application, step S05 follows step S06. Step S05 includes: irradiating the first adhesive layer 40 with light using a light processing device 90 to reduce the adhesion of the first adhesive layer 40 to the light-emitting unit 01. An adsorption component is disposed below the light processing device 90, capable of adsorbing the second adhesive layer 70. Step S06 includes: adsorbing and transferring the second adhesive layer 70 using the adsorption component below the light processing device 90 to form the second adhesive layer 70 on the surface of the dielectric film 50 opposite to the first adhesive layer 40.

[0071] In the high-brightness LED device preparation method provided in this application embodiment, since an adsorption component is provided below the light processing device 90, this application can first transfer and fix the second adhesive layer 70 to the surface of the dielectric film 50 on the side away from the first adhesive layer 40 through the adsorption component, and then turn on the light processing device 90 to directly perform light irradiation treatment on the first adhesive layer 40, which can greatly improve process efficiency and reduce production costs.

[0072] In some embodiments of this application, reference is made to Figure 7 Step S07 includes: using the adhesive effect of the second adhesive layer 70 to peel the dielectric film 50 from the light-emitting unit 01 to form a high-brightness LED device 02 located on the heat-resistant adhesive layer M2, wherein the first adhesive layer 40 is peeled off together with the dielectric film 50.

[0073] In some embodiments of this application, reference is made to Figure 8 The preparation method of the high-brightness LED device 02 further includes step S08, which can be located after step S07. Step S08 includes: removing the carrier plate 30 and the heat-resistant adhesive layer M2, and transferring the high-brightness LED device 02 onto the blue film 100, wherein the backlight surface 102 of the LED chip 10 is in contact with the blue film 100.

[0074] Secondly, embodiments of this application provide a high-brightness LED device with single-sided light emission. Figure 9 The present application provides a schematic diagram of the structure of a high-brightness LED device according to some embodiments. (Refer to...) Figure 9 As shown, the high-brightness LED device 02 includes an LED chip 10, a color conversion film 20, and a reflective film 60. The LED chip 10 includes a main light-emitting surface 101 and a back light surface 102 disposed opposite to each other, and a plurality of side light-emitting surfaces 103 connecting the main light-emitting surface 101 and the back light surface 102. The color conversion film 20 is disposed on the main light-emitting surface 101 of the LED chip 10. The reflective film 60 covers the light-emitting surface of the LED chip 10 and the side surface of the color conversion film 20. The back light surface 102 of the LED chip 10 is provided with a first pad electrode 11 and a second pad electrode 12. The first pad electrode 11 and the second pad electrode 12 have different shapes or areas, and the edges of the first pad electrode 11 and the second pad electrode 12 are flush with the edge of the color conversion film 20.

[0075] In the high-brightness LED device provided in this application, since the reflective film 60 covers the light-emitting surface of the LED chip 10 and the side of the color conversion film 20, the high-brightness LED device 02 can achieve single-sided light emission and has the technical advantage of high brightness. In addition, since the first pad electrode 11 and the second pad electrode 12 have different shapes or areas, during the fabrication process of the high-brightness LED device 02, when the alignment device aligns the dielectric film 50 with the light-emitting unit 01, it can use the first pad electrode 11 or the second pad electrode 12 of the LED chip 10 as alignment marks to determine the specific position of the light-emitting unit 01, so as to align the dielectric film 50 with the light-emitting unit 01, improve alignment efficiency and accuracy, and thus enable the edge of the dielectric film 50 to be aligned with the edge of the LED chip 10, thereby improving the coating yield of the reflective film 60 during subsequent deposition coating. Furthermore, since the edges of the first pad electrode 11 and the second pad electrode 12 are flush with the edge of the color conversion film 20, the reflective film 60 covering the side-emitting surface of the LED chip 10 can be made more regular in shape during the fabrication of the high-brightness LED device 02. This is beneficial to improving the coating quality of the reflective film 60 and to facilitating the peeling of the dielectric film 50 and the first adhesive layer 40 from the backlight surface 102 of the LED chip 10, thereby improving the product yield.

[0076] In some embodiments of this application, the area of ​​the first pad electrode 11 is larger than the area of ​​the second pad electrode 12, and the first pad electrode 11 includes a plurality of separately disposed metal blocks, and the metal blocks are connected to the same semiconductor layer in the LED chip 10, wherein the semiconductor layer can be an N-type semiconductor layer or a P-type semiconductor layer.

[0077] In some embodiments of this application, the area of ​​the first pad electrode 11 is smaller than the area of ​​the second pad electrode 12, and the second pad electrode 12 includes a plurality of separately disposed metal blocks, and the metal blocks are connected to the same semiconductor layer in the LED chip 10, wherein the semiconductor layer can be an N-type semiconductor layer or a P-type semiconductor layer.

[0078] In some embodiments of this application, the surface of the first pad electrode 11 facing away from the main light-emitting surface 101 and the surface of the second pad electrode 12 facing away from the main light-emitting surface 101 are coplanar.

[0079] In some embodiments of this application, the reflective film 60 is continuously disposed in the boundary area between the LED chip 10 and the color conversion film 20.

[0080] In some embodiments of this application, the color conversion film 20 includes a transparent substrate and a fluorescent layer disposed on the transparent substrate, and the material of the transparent substrate may be the same as that of the dielectric film 50.

[0081] Thirdly, this application provides a vehicle lamp, which includes the aforementioned single-sided high-brightness LED device. In some embodiments of this application, a plurality of the high-brightness LED devices are arranged in an array in the vehicle lamp.

[0082] In the vehicle headlight provided in this application, the reflective film 60 formed on the sidewall of the high-brightness LED device has a better reflective efficiency than conventional white wall adhesive and is thinner. This enables the vehicle headlight to achieve high collimation light output, better heat dissipation, higher reflectivity, and smaller LED device size. This is beneficial for improving the brightness of the vehicle headlight, enhancing its integration, and diversifying and differentiating its functions.

[0083] It should be noted that this application does not limit the application scenarios of the high-brightness LED device 02. For example, the high-brightness LED device 02 can also be applied to devices in other application scenarios such as display devices, medical devices, general lighting, wearable devices, and artificial intelligence.

[0084] In summary, this application provides a single-sided high-brightness LED device and its fabrication method, as well as a vehicle lamp. The fabrication method of the high-brightness LED device includes: fixing a color conversion film to an LED chip to form a light-emitting unit, wherein the LED chip includes a main light-emitting surface and a back light-emitting surface disposed opposite to each other, and the color conversion film is located on the side of the main light-emitting surface away from the back light-emitting surface; placing the light-emitting unit on a carrier plate, wherein the LED chip is located on the side of the color conversion film away from the carrier plate; and using a first adhesive layer to dispose of a dielectric film on the light-emitting unit, wherein... The first adhesive layer is in contact with the backlight surface of the LED chip; a film is deposited on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface; the first adhesive layer is processed to reduce its adhesion to the light-emitting unit; a second adhesive layer is formed on the surface of the dielectric film away from the first adhesive layer; the dielectric film is peeled off from the light-emitting unit using the adhesive effect of the second adhesive layer. The high-brightness LED device provided in this application can reduce the high precision requirements of the equipment in its manufacturing process and improve the yield.

[0085] The above provides a detailed description of a single-sided high-brightness LED device and its preparation method, as well as a vehicle lamp, provided by the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for preparing a high-brightness LED device, characterized in that, The method for preparing the high-brightness LED device includes: A color conversion film is fixedly connected to an LED chip to form a light-emitting unit, wherein the LED chip includes a main light-emitting surface and a back light surface arranged opposite to each other, and the color conversion film is located on the side of the main light-emitting surface away from the back light surface; The light-emitting unit is disposed on a carrier plate, wherein the LED chip is located on the side of the color conversion film away from the carrier plate; A dielectric film is disposed on the light-emitting unit using a first adhesive layer, wherein the first adhesive layer is in contact with the backlight surface of the LED chip; A reflective film is deposited on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface. The first adhesive layer is treated to reduce its adhesion to the light-emitting unit; A second adhesive layer is formed on the surface of the dielectric film on the side opposite to the first adhesive layer; The dielectric film is peeled off from the light-emitting unit by utilizing the adhesive effect of the second adhesive layer.

2. The method for preparing a high-brightness LED device according to claim 1, characterized in that, The backlight surface of the LED chip is provided with a first pad electrode and a second pad electrode. The first pad electrode and the second pad electrode have different shapes or areas, and the edges of the first pad electrode and the second pad electrode are flush with the edge of the color conversion film.

3. The method for preparing a high-brightness LED device according to claim 2, characterized in that, The surface of the first pad electrode facing away from the main light-emitting surface and the surface of the second pad electrode facing away from the main light-emitting surface are coplanar.

4. The method for preparing a high-brightness LED device according to claim 1, characterized in that, The first adhesive layer includes a heat-sensitive material or a photosensitive material, so that the adhesiveness of the first adhesive layer decreases after heat treatment or light treatment.

5. The method for preparing a high-brightness LED device according to claim 4, characterized in that, The step of processing the first adhesive layer to reduce its adhesion to the light-emitting unit includes: The light-emitting unit is baked using a heating stage below the carrier plate to maintain the ambient temperature of the first adhesive layer in the range of 180 to 250°C for 30 to 75 seconds.

6. The method for preparing a high-brightness LED device according to claim 5, characterized in that, In the step of depositing a film on the light-emitting unit to form a reflective film on the sidewall of the light-emitting unit, the surface of the dielectric film, and the side surface, the deposition temperature is less than 180°C.

7. The method for preparing a high-brightness LED device according to claim 4, characterized in that, The step of processing the first adhesive layer to reduce its adhesion to the light-emitting unit includes: An infrared or ultraviolet light is emitted onto the first adhesive layer using a light processing device positioned above the dielectric film, and the first adhesive layer is continuously irradiated for 5 to 20 seconds.

8. The method for preparing a high-brightness LED device according to claim 7, characterized in that, The dielectric film is a transparent sapphire sheet or a transparent alkali-free glass sheet.

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