Single-channel vertical complementary amplifying circuit based on organic electrochemical transistor and preparation method of single-channel vertical complementary amplifying circuit

Abstract

The invention discloses a single-channel vertical complementary amplifying circuit based on an organic electrochemical transistor and a preparation method of the single-channel vertical complementary amplifying circuit, and belongs to the technical field of organic electronics. The single-channel vertical complementary amplification circuit based on the organic electrochemical transistor comprises a substrate, a bottom electrode, a single-component bipolar semiconductor channel layer, a top electrode VDD, a top electrode VSS and a packaging layer from bottom to top, wherein the top electrode, the bottom electrode and the semiconductor channel layer are vertically and oppositely arranged. According to the single-channel vertical complementary amplification circuit provided by the invention, the n / p type conductive function is integrated through the single-component bipolar semiconductor material, a vertical stacking framework is matched, multiple precise photoetching steps are omitted, function stability can be guaranteed without designing a complex alignment structure and additionally optimizing process parameters, the preparation process is greatly simplified, the equipment cost is reduced, and the production efficiency is improved. The mass production yield is obviously improved, and the method has a wide application prospect.

Description

Technical Field

[0001] This invention relates to the field of organic electronic device technology, specifically to a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors and its fabrication method. Background Technology

[0002] Organic electrochemical transistors (OECTs) exhibit significant advantages in bioelectronic devices, printed circuits, and neuromorphic computing due to their unique hybrid ion-electron conduction properties. Their working principle is as follows: when the gate voltage exceeds a threshold, a redox reaction occurs in the channel material, accompanied by the insertion of ions from the electrolyte (cation insertion corresponds to n-type doping, and anion insertion corresponds to p-type doping), thereby achieving electronic conduction regulation throughout the entire channel volume. This volumetric doping mechanism gives them higher transconductance and lower operating voltage compared to organic field-effect transistors (OFETs). For example, in bioelectronics, the biocompatibility and low-voltage operation of OECTs make them suitable for wearable biosensors and health diagnostic devices; in printed electronics, their solution processability allows for compatibility with large-area, low-cost manufacturing processes.

[0003] Traditional complementary circuits rely on discrete n-type and p-type OECT devices, facing challenges such as difficult material selection, poor compatibility, and cumbersome processes. The emergence of single-component bipolar OECTs has enabled the integration of n / p-type conductivity functions from a single material, effectively simplifying the design complexity at the material level. However, the existing single-component bipolar OECTs structure is still limited to a planar layout of "source-channel-drain-gate," resulting in low n / p-type conductivity synergy efficiency and limited integration density. In terms of process, it requires 2-3 precision photolithography steps to define the electrode and channel boundaries, and the mask alignment deviation must be controlled within 1-2μm. Furthermore, the micron / submicron level control requirements for channel length and film thickness uniformity force the industry to rely on high-precision photolithography machines and high-resolution photoresists, ultimately resulting in lengthy process steps, high debugging costs, and difficulty in improving mass production yield.

[0004] Therefore, there is an urgent need to develop a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors and its fabrication method. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors and its fabrication method.

[0006] In a first aspect, this application provides a single-channel vertical complementary amplifier circuit based on an organic electrochemical transistor, comprising, from bottom to top, a substrate, a bottom electrode, a semiconductor channel layer, a top electrode, and a packaging layer; the top electrode includes a top electrode VDD and a top electrode VSS. The top electrode VDD and top electrode VSS are arranged in parallel; the top electrode, bottom electrode, and semiconductor channel layer are arranged perpendicularly to each other.

[0007] In this configuration, the top electrode VDD and VSS are arranged in parallel and perpendicular to the bottom electrode and the channel layer, enabling the n / p type conductivity (cation / anion insertion switching) of the single channel to work together directly in the vertical space, avoiding lateral signal interference of the planar architecture. The vertical stacking structure naturally increases the integration density while reducing the need for lateral wiring, providing a structural basis for single-channel replacement of discrete devices.

[0008] Preferably, the material used in the semiconductor channel layer is any one of bipolar organic semiconductor materials, anti-bipolar organic semiconductor materials, and p-type and n-type mixed materials.

[0009] In this case, bipolar / anti-bipolar materials or p / n mixtures can be controlled by gate voltage: under forward gate voltage, cations in the electrolyte are inserted into the channel to achieve n-type doping; under reverse gate voltage, anions are inserted to achieve p-type doping. There is no need to separately fabricate n-type and p-type devices, simplifying the circuit architecture from the material level and realizing the switching between n-type (cation insertion) and p-type (anion insertion) conduction in the same channel.

[0010] Preferably, the substrate comprises either a silicon wafer or a flexible polyimide.

[0011] In this context, silicon wafers have the advantages of high rigidity and flat surface, making them suitable for high-precision fabrication scenarios; flexible polyimide has the advantages of bendability, making it suitable for wearable and flexible electronic devices; both substrates can provide stable support for the bottom electrode and channel layer, ensuring the interlayer adhesion of the vertically stacked structure.

[0012] Preferably, the bottom electrode is a composite layer of chromium and gold layers from bottom to top, wherein the thickness of the chromium layer is 1-5 nm and the thickness of the gold layer is 30-80 nm.

[0013] In this case, the chromium layer enhances the adhesion to the substrate (silicon wafer or polyimide) through chemical bonding, preventing electrode peeling in vertical stacking; the gold layer has high conductivity, ensuring efficient charge transfer between the bottom electrode and the channel layer, solving the problem of excessive contact resistance in vertical structures.

[0014] Preferably, the material of the top electrode includes any one of gold, silver or platinum, with a thickness ≥50nm; the distance between the top electrode VDD and the top electrode VSS is ≤80μm.

[0015] In this context, gold, silver, and platinum are chemically stable conductive materials, preventing electrode failure caused by electrolyte corrosion; a thickness of ≥50nm ensures continuous and dense electrodes, guaranteeing stable current transmission; and a top electrode spacing of ≤80μm, combined with a vertically opposite arrangement, shortens the signal transmission path during n / p type conductivity switching, improves response speed, and relaxes alignment accuracy requirements.

[0016] Preferably, the encapsulation layer is made of a photosensitive crosslinking agent and has a thickness of 5-20 μm.

[0017] In this case, the photosensitive adhesive, after being cured by ultraviolet crosslinking, has high mechanical strength and can fix the vertical stacked structure of substrate-electrode-channel, blocking water vapor, oxygen and electrolyte corrosion; as a photosensitive crosslinking agent, its cured film layer does not block the ion transport path and does not affect the cation / anion insertion of the channel layer, ensuring the normal n / p type conductivity switching function.

[0018] Secondly, this application provides a method for fabricating a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors, comprising the following steps: S1: Cut the substrate, ultrasonically clean it with isopropanol for 15-30 minutes, dry it with nitrogen and then clean it with UV light for 15-30 minutes to obtain the pretreated substrate. S2: Place the pretreated substrate on the magnetic substrate, cover the substrate with the bottom electrode mask, and evacuate the vapor deposition apparatus to 1.0 × 10⁻⁶. -3 Pa, first evaporate a chromium layer, then evaporate a gold layer, and after evaporation, UV clean for 15-30 minutes to form the bottom electrode; S3: Add semiconductor channel layer material to the surface of the bottom electrode, spin coat for 60 seconds, remove and air dry, then wash with ultrapure water and blow dry with nitrogen to form a semiconductor channel layer. S4: Cover the surface of the semiconductor channel layer with a top electrode mask, adjust it under a microscope so that the top electrode mask is perpendicularly aligned with the bottom electrode, place it in a vapor deposition apparatus for vapor deposition, and after vapor deposition, clean it with UV for 15-30 minutes to form the top electrode VDD and top electrode VSS. S5: Drop a photosensitive crosslinking agent onto the device surface, spin-coat for 30-60 seconds, remove, bake at 80-100℃ for 0.5-2 minutes, then irradiate with 365nm ultraviolet light for 2-3.5 seconds, then bake in a heated panel at 80-100℃ for 4-10 minutes, immerse in developer for 5-20 seconds, clean with isopropanol for 5-20 seconds, and finally bake in a heated panel at 120-180℃ for 4-10 minutes to obtain the single-channel vertical complementary amplifier circuit.

[0019] Preferably, the ultrapure water has a resistivity of 18.25 MΩ·cm at 25°C, a TOC (total organic carbon) of 0.8 ppb, a particle size ≥0.05 μm, a particulate matter concentration of 0.5 particles / mL, and a boron concentration of 0.8 ng / L.

[0020] Preferably, the electrode evaporation rate in S2 and S4 is 0.05-0.2 Å / s.

[0021] Preferably, the spin coating operation in S3 and S5 is: spin coating at an acceleration of 2000-4000 r / s and a speed of 2000-4000 r / min.

[0022] Preferably, the volume of semiconductor channel layer material added in S3 is 50-80 μL.

[0023] Preferably, the photosensitive crosslinking agent in S5 is SU-8 photoresist.

[0024] Beneficial technical effects: This application constructs a semiconductor channel layer using bipolar / anti-bipolar organic semiconductor materials (or a mixture of p-type and n-type materials). By controlling the gate voltage, it achieves n-type (cation insertion) and p-type (anion insertion) conduction switching within the same channel. Simultaneously, it designs a bottom-up vertical stacking structure of the substrate, bottom electrode, semiconductor channel layer, top electrode, and encapsulation layer, forming two parallel top electrodes, VDD and VSS, which are vertically opposite to the bottom electrode and semiconductor channel layer, creating a short-path vertical conduction path. When the gate voltage controls the channel to achieve n / p-type switching, the vertical path can directly complete the complementary amplification and conduction of the signal, avoiding the lateral path loss and signal crosstalk of the planar structure, and improving the synergistic efficiency of n / p-type functions. The functional integration of a single-channel design eliminates the need for complex lateral wiring and alignment structures to accommodate discrete devices in vertical stacking. Furthermore, the short-path conductivity of vertical stacking can accommodate the n / p switching requirements of a single-channel design. With the synergy of these two features, functional stability can be guaranteed without the need for high-precision lithography machines and additional interlayer alignment or repair steps, thus achieving low cost, high integration, and easy mass production of complementary amplifier circuits. Attached Figure Description

[0025] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the proportional relationships of the various components in the accompanying drawings do not represent the actual proportional relationships in the material selection and design, but are merely schematic diagrams of the structure or position, wherein: Figure 1 This is a top view of the single-channel vertical complementary amplifier circuit of this application.

[0026] Figure 2 This is a cross-sectional view of the single-channel vertical complementary amplifier circuit of this application.

[0027] Figure 3 This is a diagram showing the transfer characteristics of a single OECT device in this application.

[0028] Figure 4 This is a transfer characteristic diagram of the single-channel vertical complementary amplifier circuit of this application.

[0029] Figure 5 This is the gain diagram of the single-channel vertical complementary amplifier circuit in this application.

[0030] Explanation of reference numerals in the attached figures: 1. Substrate; 2. Bottom electrode; 3. Semiconductor channel layer; 4. Top electrode VDD; 5. Top electrode VSS; 6. Encapsulation layer. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Obviously, the described embodiments are some embodiments of this application, but not all embodiments.

[0032] It should be understood that in the various embodiments of this application, the order of the above processes does not imply the order of execution. Some or all steps may be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0033] Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application. The invention will be further described below with reference to embodiments, but is not limited thereto.

[0034] This application proposes a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors, comprising, from bottom to top, a substrate 1, a bottom electrode 2, a semiconductor channel layer 3, a top electrode, and a packaging layer 6. The top electrode includes a top electrode VDD4 and a top electrode VSS5, which are arranged in parallel. The top electrode is vertically opposite to the bottom electrode 2 and the semiconductor channel layer 3. The semiconductor channel layer 3 is any one of a bipolar organic semiconductor material, an anti-bipolar organic semiconductor material, and a hybrid p-type and n-type material. The substrate 1 includes any one of silicon wafers and flexible polyimide. The bottom electrode 2 is a composite layer of chromium and gold layers from bottom to top, wherein the chromium layer has a thickness of 1-5 nm, and the gold layer has a thickness of 30-80 nm. The top electrode is made of any one of gold, silver, or platinum, with a thickness ≥50 nm; the distance between the top electrode VDD4 and the top electrode VSS5 is ≤80 μm. The encapsulation layer 6 is a photosensitive crosslinking agent with a thickness of 5-20 μm; the photosensitive crosslinking agent is SU-8 photoresist.

[0035] Example 1 like Figure 1 and Figure 2 As shown, a method for fabricating a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors includes the following steps: S1: Cut a flexible polyimide with dimensions of 2.2cm × 2.2cm, place the cut flexible polyimide in isopropanol solution and ultrasonically clean it for 15 minutes. After cleaning, dry it with nitrogen gas and place it in a UV light cleaning machine for 15 minutes to obtain the pretreated substrate 1. S2: Place the pretreated substrate 1 on the magnetic substrate, place the bottom electrode mask, put the substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to a vacuum of 1.0 × 10⁻⁶. -3 After Pa, evaporation begins; first, a 3 nm thick chromium layer is deposited at a rate of 0.1 Å / s to increase adhesion, and then a 50 nm thick gold layer is deposited at a rate of 1.0 Å / s; after evaporation, UV cleaning is performed for 20 min to form the bottom electrode 2. S3: Use a pipette to pick up 60 μL of the mixed p-type and n-type material and coat it evenly on the bottom electrode 2; spin coat at an acceleration of 3000 r / s and a speed of 3000 r / min for 60 s, then remove it and place it in the air. Wait for the surface of the spin-coated semiconductor layer to change from dark purple to blue-black, then wash it in ultrapure water for 10 s; remove it and blow it dry with inert nitrogen gas to form the semiconductor channel layer 3; S4: Place the top electrode mask under the microscope, and use tweezers to move the mask so that it aligns with the previously deposited bottom electrode 2; place the magnetic substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to 1.0 × 10⁻⁶. -3 After Pa, the evaporation process begins; a 50 nm thick gold layer is deposited at a rate of 1.0 Å / s; after the evaporation is completed, the tray is removed from the evaporation apparatus and cleaned with a UV light cleaner for 15 min to form the top electrode VDD4 and the top electrode VSS5. S5: Using a pipette, 90 μL of SU-8 photoresist is evenly coated onto the device. The coating is then spin-coated at 3000 r / s acceleration and 3000 r / min speed for 45 seconds, after which the device is removed. The device is placed on a heated panel and baked at 95°C for 1 minute, followed by irradiation with 365 nm ultraviolet light for 3.5 seconds to crosslink and cure the SU-8 photoresist. Next, it is baked at 95°C for 4 minutes to enhance the crosslinking density. It is then immersed in developer for 10 seconds to remove unexposed areas, cleaned with isopropanol for 10 seconds to remove residual developer, and finally baked at 150°C for 6 minutes to complete the fabrication of a 10 nm thick encapsulation layer 6, thus obtaining the single-channel vertical complementary amplifier circuit.

[0036] In S3, for the p-type and n-type mixed materials: use a pipette to measure 500 μL of BBL solution and 500 μL of DPPTT solution respectively, pour them into the same dry disposable solution bottle, add 2000 μL of dichloromethane, place a magnetic stir bar, and stir at 1500 r / min for 4 h.

[0037] The BBL solution was prepared as follows: Weigh 20 mg of BBL powder, pipette 1000 μL of mesylate, and pour them into a disposable solution bottle. Then, add a magnetic force to the bottle and stir at 1500 r / min for 3 hours.

[0038] The DPPTT solution was prepared as follows: Weigh 20 mg of DPPTT powder, pipette 1000 μL of chloroform, and pour them into a disposable solution bottle. Then, add a magnetic force to the bottle and stir at 1500 r / min for 3 hours.

[0039] in, Figure 3 The curves show the transfer characteristics of the single OECT device in this application. When Vgs < 0, Ids is negative (p-type conduction) and when Vgs > 0, Ids is positive (n-type conduction). This indicates that there is no need to separate n / p-type devices, and reversible switching of n / p-type conduction can be achieved with a single channel. Figure 4 The curve shows the transfer characteristic of the single-channel vertical complementary amplifier circuit of this application. When the input voltage Vin rises from -0.6V to 0V, the output voltage Vout jumps from -0.7V to 0V in reverse phase, which clearly indicates that the circuit has complementary inverting amplification function. Figure 5 The gain diagram of the single-channel vertical complementary amplifier circuit of this application shows that "the absolute value of the gain in the range of -0.4V to -0.2V is ≥10, indicating that the circuit not only realizes the inversion function, but also has stable amplification performance."

[0040] Example 2 A method for fabricating a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors includes the following steps: S1: Cut a silicon wafer with dimensions of 2.2cm × 2.2cm, place the cut silicon wafer in isopropanol solution and ultrasonically clean it for 15 minutes. After cleaning, blow it dry with nitrogen gas and place it in a UV light cleaning machine for 15 minutes to obtain the pretreated substrate 1. S2: Place the pretreated substrate 1 on the magnetic substrate, place the bottom electrode mask, put the substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to a vacuum of 1.0 × 10⁻⁶. -3 After Pa, evaporation begins; first, a 2 nm thick chromium layer is deposited at a rate of 0.2 Å / s to increase adhesion, and then a 30 nm thick gold layer is deposited at a rate of 1.0 Å / s; after evaporation, UV cleaning is performed for 15 min to form the bottom electrode 2. S3: Using a pipette, 80 μL of bipolar organic semiconductor material polythiophene-3-thiophene (PBTTT) solution is uniformly coated onto the bottom electrode 2; spin-coated at an acceleration of 3000 r / s and a speed of 3000 r / min for 60 s, then removed and placed in the air, then dried in a fume hood for 10 min, and rinsed in ultrapure water for 10 s; then removed and dried with inert nitrogen gas to form semiconductor channel layer 3; S4: Place the top electrode mask under the microscope, and use tweezers to move the mask so that it aligns with the previously deposited bottom electrode 2; place the magnetic substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to 1.0 × 10⁻⁶. -3 After Pa, the evaporation process begins; a 60 nm thick gold layer is deposited at a rate of 2.0 Å / s; after the evaporation is completed, the tray is removed from the evaporation apparatus and cleaned with a UV light cleaner for 15 min to form the top electrode VDD4 and the top electrode VSS5. S5: Using a pipette, 90 μL of SU-8 photoresist is evenly coated onto the device. The coating is then spin-coated at 3000 r / s acceleration and 4000 r / min speed for 45 seconds, after which the device is removed. The device is placed on a heated panel and baked at 95°C for 1 minute, followed by irradiation with 365 nm ultraviolet light for 3.5 seconds to crosslink and cure the SU-8 photoresist. Next, it is baked at 95°C for 4 minutes to enhance the crosslinking density. It is then immersed in developer for 10 seconds to remove unexposed areas, cleaned with isopropanol for 10 seconds to remove residual developer, and finally baked at 150°C for 6 minutes to complete the fabrication of a 5 nm thick encapsulation layer 6, thus obtaining the single-channel vertical complementary amplifier circuit.

[0041] The PBTTT solution was prepared as follows: Weigh 5 mg of PBTTT powder, pipette 1000 μL of anhydrous chlorobenzene, and pour them into a disposable solution bottle. Stir the bottle with a magnetic force at 1500 r / min for 3 hours. Transfer the solution to a brown reagent bottle and store it in a nitrogen atmosphere protected from light.

[0042] Example 3 A method for fabricating a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors includes the following steps: S1: Cut a silicon wafer with dimensions of 2.2cm × 2.2cm, place the cut silicon wafer in isopropanol solution and ultrasonically clean it for 15 minutes. After cleaning, blow it dry with nitrogen gas and place it in a UV light cleaning machine for 15 minutes to obtain the pretreated substrate 1. S2: Place the pretreated substrate 1 on the magnetic substrate, place the bottom electrode mask, put the substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to a vacuum of 1.0 × 10⁻⁶. -3After Pa, evaporation begins; first, a 5 nm thick chromium layer is deposited at a rate of 0.2 Å / s to increase adhesion, and then an 80 nm thick gold layer is deposited at a rate of 1.0 Å / s; after evaporation, UV cleaning is performed for 15 min to form the bottom electrode 2. S3: Using a pipette, take 50 μL of a solution of the anti-bipolar organic semiconductor material poly(3-hexylthiophene)-b-poly(perylene diimide) (P3HT-b-PDI) and uniformly coat it onto the bottom electrode 2; spin-coat at an acceleration of 3000 r / s and a speed of 3000 r / min for 60 s, then remove it and place it in the air. After the surface of the spin-coated semiconductor layer changes from dark purple to blue-black, wash it in ultrapure water for 10 s; remove it and blow it dry with inert nitrogen gas to form the semiconductor channel layer 3; S4: Place the top electrode mask under the microscope, and use tweezers to move the mask so that it aligns with the previously deposited bottom electrode 2; place the magnetic substrate into the vapor deposition apparatus, and evacuate the vapor deposition apparatus to 1.0 × 10⁻⁶. -3 After Pa, the evaporation process begins; a 70 nm thick gold layer is deposited at a rate of 1.0 Å / s; after the evaporation is completed, the tray is removed from the evaporation apparatus and cleaned with a UV light cleaner for 15 min to form the top electrode VDD4 and the top electrode VSS5. S5: Using a pipette, 90 μL of SU-8 photoresist is evenly coated onto the device. The coating is then spin-coated at 2000 r / s for 50 seconds. The device is then placed on a 95°C heated panel and baked at 95°C for 1 minute. Next, it is irradiated with 365 nm ultraviolet light for 3.5 seconds to crosslink and cure the SU-8 photoresist. It is then baked at 95°C for 4 minutes to enhance the crosslinking density. The device is then immersed in developer for 10 seconds to remove unexposed areas. After cleaning with isopropanol for 10 seconds to remove residual developer, the device is finally baked at 150°C for 6 minutes to complete the fabrication of a 20 nm thick encapsulation layer 6, thus obtaining the single-channel vertical complementary amplifier circuit.

[0043] The P3HT-b-PDI solution was prepared as follows: 8 mg of P3HT-b-PDI powder was weighed, and 2000 μL of o-dichlorobenzene was pipetted into a disposable solution bottle. The bottle was then stirred with a magnetic force at a speed of 1500 r / min for 10 hours. The solution was sealed under nitrogen protection and stored at 4°C in the dark.

[0044] In embodiments 1-3 of this application, a semiconductor channel layer 3 is constructed using bipolar / anti-bipolar organic semiconductor materials or a mixture of p-type and n-type materials. Utilizing the ion insertion characteristics under gate voltage regulation, a single channel can reversibly switch between n / p-type conduction modes, replacing traditional discrete n / p-type devices. Through a vertical stacking structure, the bottom electrode serves as a common electrode, and the top electrodes VDD4 and VSS5 are distributed parallel to each other above the channel layer and perpendicular to it, forming a short-path vertical conduction path. This allows for direct complementary signal amplification and conduction, avoiding lateral path loss and signal crosstalk in planar structures, improving the synergistic efficiency of n / p-type functions. Low-precision spin coating and evaporation processes ensure channel uniformity and electrode regularity, ultimately achieving stable complementary amplification functions with a simplified process.

[0045] It should be understood that the above are only some embodiments of the present invention. It should be pointed out that for those skilled in the art, other modifications and improvements can be made without departing from the inventive concept of the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A single-channel vertical complementary amplifier circuit based on organic electrochemical transistors, characterized in that, From bottom to top, it includes a substrate (1), a bottom electrode (2), a semiconductor channel layer (3), a top electrode, and a packaging layer (6), wherein the top electrode includes a top electrode VDD (4) and a top electrode VSS (5). The top electrode VDD (4) and the top electrode VSS (5) are arranged in parallel; the top electrode, the bottom electrode (2), and the semiconductor channel layer (3) are arranged vertically opposite each other.

2. The single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to claim 1, characterized in that, The semiconductor channel layer (3) is made of any one of bipolar organic semiconductor materials, anti-bipolar organic semiconductor materials, and p-type and n-type mixed materials.

3. The single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to claim 1, characterized in that, The substrate (1) includes either a silicon wafer or a flexible polyimide.

4. A single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to claim 1, characterized in that, The bottom electrode (2) is a composite layer of chromium and gold layers from bottom to top, with the chromium layer having a thickness of 1-5 nm and the gold layer having a thickness of 30-80 nm.

5. A single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to claim 1, characterized in that, The material of the top electrode includes any one of gold, silver or platinum, with a thickness ≥50nm; the distance between the top electrode VDD (4) and the top electrode VSS (5) is ≤80μm.

6. A single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to claim 1, characterized in that, The encapsulation layer (6) is made of a photosensitive crosslinking agent and has a thickness of 5-20 μm.

7. A method for fabricating a single-channel vertical complementary amplifier circuit based on organic electrochemical transistors according to any one of claims 1-6, characterized in that, Includes the following steps: S1: Cut the substrate (1), ultrasonically clean it with isopropanol for 15-30 min, blow it dry with nitrogen and then clean it with UV light for 15-30 min to obtain the pretreated substrate (1). S2: Place the pretreated substrate (1) on the magnetic substrate, cover the bottom electrode mask with the substrate (1), and evacuate the vapor deposition apparatus to 1.0 × 10⁻⁶. -3 Pa, first evaporate the chromium layer, then evaporate the gold layer, and after evaporation, UV clean for 15-30 min to form the bottom electrode (2). S3: Add semiconductor channel layer (3) material to the surface of the bottom electrode (2), spin coat for 60s, take it out, air dry, wash with ultrapure water and blow dry with nitrogen to form semiconductor channel layer (3). S4: Cover the surface of the semiconductor channel layer (3) with a top electrode mask, adjust it under a microscope so that the top electrode mask is vertically aligned with the bottom electrode (2), place it in a vapor deposition apparatus for vapor deposition, and after vapor deposition, clean it with UV for 15-30 minutes to form the top electrode VDD (4) and the top electrode VSS (5). S5: Drop a photosensitive crosslinking agent onto the device surface, spin-coat for 30-60 seconds, remove, bake at 80-100℃ for 0.5-2 minutes, then irradiate with 365nm ultraviolet light for 2-3.5 seconds, then bake in a heated panel at 80-100℃ for 4-10 minutes, immerse in developer for 5-20 seconds, clean with isopropanol for 5-20 seconds, and finally bake in a heated panel at 120-180℃ for 4-10 minutes to obtain the single-channel vertical complementary amplifier circuit.

8. The method for fabricating a single-channel vertical complementary amplifier circuit based on an organic electrochemical transistor according to claim 7, characterized in that, The electrode evaporation rate in S2 and S4 is 0.05-0.2 Å / s.

9. The method for fabricating a single-channel vertical complementary amplifier circuit based on an organic electrochemical transistor according to claim 7, characterized in that, The spin coating operations in S3 and S5 are as follows: spin coating at an acceleration of 2000-4000 r / s and a speed of 2000-4000 r / min.

10. The method for fabricating a single-channel vertical complementary amplifier circuit based on an organic electrochemical transistor according to claim 7, characterized in that, The photosensitive crosslinking agent mentioned in S5 is SU-8 photoresist.

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