Device and method for growing silicon carbide single crystals by liquid phase method

By introducing graphite partitions and a unique mechanical structure into the apparatus for growing silicon carbide single crystals in the liquid phase method, the problem of contamination of the seed crystal surface by volatiles during the heating stage was solved, and the growth of high-quality silicon carbide single crystals was achieved.

CN121737818APending Publication Date: 2026-03-27INNER MONGOLIA QINGCHENG SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-17
Publication Date
2026-03-27

AI Technical Summary

Technical Problem

During the liquid phase growth of silicon carbide single crystals, volatiles of silicon, aluminum and other components in the raw materials will condense on the surface of the seed crystal during the heating stage, resulting in surface contamination and increased roughness, which affects the crystal quality.

Method used

A device for growing silicon carbide single crystals using a liquid phase method is designed, including a graphite crucible, a graphite partition, and a graphite seed crystal holder. By constructing a physical barrier to isolate volatiles during the heating stage and automatically removing the partition during the growth stage to prevent convection interference, a unique mechanical structure and operating method are adopted to ensure the cleanliness of the seed crystal surface.

Benefits of technology

It effectively isolates the volatiles from contaminating the seed crystal surface, ensuring the cleanliness and flatness of the crystal growth initiation interface, improving crystal quality, and reducing defect density.

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Abstract

The invention belongs to the technical field of semiconductor crystal growth, and particularly relates to a device and a method for growing silicon carbide single crystals by a liquid phase method. The device comprises a graphite crucible, a graphite partition plate and a graphite seed crystal support. A graphite sheet with a baffle is arranged at the bottom of the graphite crucible; the graphite partition plate is arranged below the seed crystal, and the penetrating opening, the caulking groove, the slotted graphite block and the lower graphite baffle on the graphite partition plate are matched with the vertical column of the graphite seed crystal support, so that the partition plate can be suspended and fixed below the seed crystal to form an isolation barrier before raw materials are melted. During growth, the seed crystal descends to a specific position and then the crucible is rotated, so that the upper and lower graphite baffles are in contact and drive the partition plate to rotate, and the vertical graphite column is separated from the slotted graphite block; the graphite partition plate floats upwards under the action of melt buoyancy and is fixed to the bottom of the crucible through embedding of the embedding grooves and the graphite sheets. The method can effectively isolate the pollution of volatile matters to the surface of the seed crystal in the heating stage and prevent the partition from interfering with growth convection, thereby improving the crystal quality.
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Citation Information

Patent Citations

  • A liquid phase method for growing silicon carbide single crystal and a growth method thereof

    CN119041010B