TR assembly with phase-adjustable bonding type matching circuit and phased array radar

Abstract

The invention provides a phase-adjustable bonding type matching circuit and a TR assembly of a phased array radar. The phase-adjustable bonding type matching circuit comprises a phase-adjustable bonding type structure composed of microstrip lines and a coplanar waveguide matching structure with high matching performance. Wherein the phase-adjusting bonding structure formed by the microstrip lines comprises a radio frequency connector, a microwave dielectric plate, a gold wire and a chip, and the radio frequency connector is used for connecting a TR assembly and an antenna; a microstrip line is attached to the top layer of the microwave dielectric plate and provides a transmission path for signals in the TR assembly. And the gold wire is used for connecting the microstrip line and the chip pin. According to the invention, the 16-channel TR assembly is used as a carrier, and the functions of phase adjustment and low-loss matching are realized by adjusting a passive matching structure in the circuit.

Description

Technical Field

[0001] This invention belongs to the field of radio frequency / microwave and relates to multi-channel TR component technology for adjusting the amplitude and phase consistency of multi-channel TR components. In particular, it relates to a TR component with an adjustable phase bonding matching circuit and a phased array radar. Background Technology

[0002] Multi-channel T / R modules are the core hardware foundation of active phased array (AESA) technology. Their performance is highly dependent on the amplitude and phase consistency between channels. Amplitude and phase inconsistencies directly lead to antenna beam pointing deviation, increased sidelobe levels, and decreased effective isotropic radiated power (EIRP), severely impacting overall system performance. For details, please refer to the book "Principles of Phased Array Radar" edited by Zhang Guangyi. However, chip performance dispersion, microwave circuit manufacturing tolerances, micro-assembly process fluctuations, and mechanical assembly deviations are bottlenecks restricting amplitude and phase consistency. Nie Huifeng of the 723 Research Institute of China Shipbuilding Industry Corporation also mentioned in "Research on an Amplitude and Phase Consistency Correction Method for Active Phased Array Radar" that differences exist in the feed networks between channels, and chip uniformity is affected by environmental factors such as operating temperature, causing variations in the amplitude and phase consistency of the module's transmission. Summary of the Invention

[0003] To address the aforementioned problems, this invention aims to propose a bonded matching circuit with adjustable phase and a TR component for phased array radar. This component not only possesses excellent matching performance but also has the function of adjusting the phase, overcoming the shortcomings of poor amplitude-phase consistency in existing multi-channel TR components. It can be widely applied in T / R components of phased array radar.

[0004] The technical solution of this invention includes:

[0005] A bonding matching circuit with adjustable phase includes:

[0006] Phase-adjustable bonding structures composed of microstrip lines and coplanar waveguides with high matching performance;

[0007] The phase-adjustable bonding structure composed of microstrip lines includes an RF connector, a microwave dielectric substrate J1, gold wires, and a chip. The RF connector is used to connect the TR component and the antenna. The top layer of the microwave dielectric substrate J1 is covered with microstrip lines, which provide a transmission path for the signals inside the TR component. The gold wires are used to connect the microstrip lines and the chip pins.

[0008] A phased array radar TR component includes a 16-channel TR component transmit and receive link having the aforementioned adjustable phase bonding matching circuit, the 16-channel TR component transmit and receive link comprising:

[0009] The transmit link on side A of the component consists of a first single-pole double-throw switch, a temperature compensator, a first low-noise amplifier, a second single-pole double-throw switch, a 1-to-2 power divider, two four-channel amplitude-phase multifunction chips, and eight power amplifier switch chips connected in series. Each four-channel amplitude-phase multifunction chip is connected to four power amplifier switch chips, and there are a total of 8 transmit channels on side A of the component.

[0010] The transmission links on side B of the module have the same structure as those on side A of the module, and are arranged in a flipped symmetrical manner. There are a total of 8 transmission channels on side B of the module.

[0011] The receiving link on component A consists of eight limiting low-noise amplifier chips, two four-channel amplitude-phase multifunction chips, a 1-to-2 power divider, a second single-pole double-throw switch, a second low-noise amplifier, and a first single-pole double-throw switch connected in series. Four limiting low-noise amplifier chips are connected in parallel to a four-channel amplitude-phase multifunction chip.

[0012] The receiving link on side B of the component has the same link structure as that on side A of the component, and they are arranged in a mirror image. There are a total of 8 receiving channels on side B of the component.

[0013] The adjustable phase bonding matching circuit is connected to each power amplifier switching chip via gold wire bonding, and the other end is connected to the microstrip line on the microwave dielectric board J1.

[0014] In the transmission link, the coplanar waveguide transmission line is located at the long connection between two devices, respectively between the coplanar waveguide transmission line on microwave dielectric board J2 and the first single-pole double-throw switch, between the first single-pole double-throw switch and the temperature compensator, between the first low-noise amplifier and the second single-pole double-throw switch, between the one-to-two power divider and the four-channel amplitude-phase multifunction chip, and between the four-channel amplitude-phase multifunction chip and the power amplifier switch chip;

[0015] In the receiving link, the coplanar waveguide transmission lines are located between the limiting low-noise amplifier chip and the four-channel amplitude-phase multifunction chip, between the amplitude-phase multifunction chip and the 1-to-2 power divider, between the second single-pole double-throw switch and the second low-noise amplifier, and between the second low-noise amplifier and the first single-pole double-throw switch.

[0016] Beneficial effects:

[0017] 1. This invention uses a 16-channel TR component as a carrier and achieves phase adjustment and low-loss matching by adjusting the passive matching structure in the circuit;

[0018] 2. The bonding matching circuit with adjustable phase proposed in this invention has a second microstrip line P1, a third microstrip line P2, a fourth microstrip line P3, and a fifth microstrip line P4 fixedly arranged on both sides of the first microstrip line P0. By connecting: (1) the first microstrip line P0 and the second microstrip line P1; (2) the first microstrip line P0, the second microstrip line P1, and the third microstrip line P2; (3) the first microstrip line P0, the second microstrip line P1, the third microstrip line P2, and the fourth microstrip line P3; (4) the first microstrip line P0, the second microstrip line P1, the third microstrip line P2, the fourth microstrip line P3, and the fifth microstrip line P4, four phase modulation modes are realized, namely the first phase modulation mode, the second phase modulation mode, the third phase modulation mode, and the fourth phase modulation mode.

[0019] In this invention, the phase-adjustable bonding matching circuit performs phase adjustment while ensuring excellent matching performance. The minimum adjustable phase is 2°, and the phase adjustment range is 0~8°, which are 2°, 5° and 8° respectively. Figure 1 Simulation test diagrams of the adjustable angle of the invention are provided.

[0020] 3. The high-performance matching structure proposed in this invention, applied to the transmission path between chips in a component, features wide bandwidth and low loss compared to traditional matching topologies. Since the component is used in the 14~18GHz range, its return loss is ≤25 dB and insertion loss is ≤0.15 dB within this frequency range. Figure 2 The simulation diagram of the S-parameters under this topology is given. Attached Figure Description

[0021] Figure 1 The diagram shows a simulation test of the adjustable angle of the present invention.

[0022] Figure 2 The simulation diagram of S-parameters under the topology of the present invention is shown;

[0023] Figure 3 A schematic structural diagram of the matching section of a microstrip line is shown;

[0024] Figure 4 Phase modulation modes are shown, where (a) shows the first phase modulation mode, (b) shows the second phase modulation mode, (c) shows the third phase modulation mode, and (d) shows the fourth phase modulation mode;

[0025] Figure 5 This diagram illustrates a coplanar waveguide with high matching performance according to the present invention.

[0026] Figure 6 This diagram illustrates the architecture of a TR component for a phased array radar according to the present invention.

[0027] Figure 7The diagram shows the radio frequency circuit of the TR component of a phased array radar according to the present invention. Detailed Implementation

[0028] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0029] The technical solution upon which this invention is based includes:

[0030] In his book "HFSS Antenna Design", Li Mingyang mentions the analysis method of the gold wire equivalent model;

[0031] In his paper "Microstrip Lines and Slotlines", K.C. Gupta discusses the relationship between dielectric constant, frequency, and phase of a dielectric substrate.

[0032] This invention provides a bonding matching circuit with adjustable phase, comprising:

[0033] Phase-adjustable bonding structures composed of microstrip lines and coplanar waveguides with high matching performance;

[0034] The adjustable-phase bonding structure composed of microstrip lines includes an RF connector, a microwave dielectric substrate, gold wires, and a chip. The RF connector is used to connect the TR component and the antenna. The top layer of the microwave dielectric substrate has microstrip lines attached to provide a transmission path for the signals inside the TR component. The gold wires are used to connect the microstrip lines and the chip pins.

[0035] In one embodiment, in a phase-adjustable bonding structure composed of microstrip lines, an RF connector is soldered to one end of the microstrip line on a microwave dielectric substrate, and the other end of the microstrip line is bonded to the pins of a chip via gold wires.

[0036] Figure 3 A schematic structural diagram of a microstrip line matching section is shown. Figure 3 As shown, the microstrip line includes:

[0037] The first microstrip line P0 is fixedly mounted on the top of the microwave dielectric substrate;

[0038] The second microstrip line P1 is fixedly mounted on the top of the microwave dielectric substrate. The second microstrip line P1 is collinear with the first microstrip line P0, and a 0.1mm gap is maintained between the closest ends of the two microstrip lines. The second microstrip line P1 has a diameter of 0.15mm. A rectangular block of 0.35mm;

[0039] The third microstrip line P2 is fixedly mounted on the top of the microwave dielectric substrate. The third microstrip line P2 is collinear with the first microstrip line P0, and a 0.1mm gap is maintained between the closest ends of the third microstrip line P2 and the second microstrip line P1. The third microstrip line P2 is 0.1mm... A rectangular block of 0.35mm;

[0040] The fourth microstrip line P3 is fixedly mounted on the top of the microwave dielectric substrate. The fourth microstrip line P3 is collinear with the first microstrip line P0, and a 0.1mm gap is maintained between the closest ends of the two microstrip lines. The fourth microstrip line P3 has a length of 0.15mm. A rectangular block of 0.35mm;

[0041] The fifth microstrip line P4 is fixedly mounted on the top of the microwave dielectric substrate. The fifth microstrip line P4 is collinear with the first microstrip line P0, and there is a 0.1mm gap between the closest ends of the fifth microstrip line P4 and the fourth microstrip line P3. The fifth microstrip line P4 is 0.1mm... A rectangular block of 0.35mm;

[0042] As a further embodiment of the invention: the microwave dielectric substrate is a Rogers 5880 single-layer microstrip dielectric substrate Sub with a dielectric constant of 2.2, a loss tangent of 0.0009, and a thickness of 0.127 mm. The back of the dielectric substrate is a large area of ​​copper foil, and the front is a microstrip wiring layer.

[0043] As a further aspect of the present invention: the number of gold wires, i.e. connectors, is two or more, and the connectors between the first microstrip line and the chip are two gold wires with a diameter of 25μm, which are used to compensate for the parasitic parameters introduced by the bonding of the connectors, so as to realize wide bandwidth, high performance and low loss microwave signal transmission between microstrip lines.

[0044] This invention provides the basic principles for compensating for parameters introduced by gold wire bonding and for bonding-type phase modulation, including: microstrip line compensation method, which uses a parallel capacitance to ground generated by a line with a width much larger than that of a normal microstrip line to achieve series resonance with the series inductance of the gold wire at the target frequency, thereby canceling its influence;

[0045] In this invention, the microstrip line and chip pins are matched using two gold wires. The resistive and inductive values ​​introduced by a single and double gold wire can be calculated using the following methods: Accurate modeling of gold wire bonding parasitic parameters: First, the intrinsic impedance of the bonding wire is accurately calculated. A single gold wire can be equivalent to a resistor at high frequencies. and an inductor The series connection. Due to the high-frequency skin effect, when the diameter of the gold wire... With skin depth ratio When the equivalent resistance is given by the following formula:

[0046] ;

[0047] in, The bond wire length, The diameter of the bonding wire. To reach skin depth, The resistivity of gold material (take) , (It is a unit of length in meters).

[0048] Intrinsic inductance of a single gold wire in free space Calculated by the following formula:

[0049] ;

[0050] in, Vacuum permeability ( H / m), Let be the relative permeability of gold (taken as 1).

[0051] Inductance correction due to arch height:

[0052] If the lowest point of the bond line is at a height of the ground plane The mutual inductance introduced by the ground plane effect This will reduce its total inductance. The corrected actual inductance of a single gold wire. for:

[0053] ;

[0054] in, , Vacuum permeability ( H / m), This represents the bond wire length.

[0055] Optimization of the parallel double gold wire model: When using two parallel gold wires (spacing D) for parallel bonding, the mutual inductance between the two gold wires needs to be considered. The total equivalent inductance after the two gold wires are connected in parallel. It is not a simple halving, but should be calculated precisely using the following formula:

[0056] ;

[0057] This model greatly improves the simulation accuracy of actual double gold wire bonded structures.

[0058] Microstrip line compensation capacitor design based on LC resonance:

[0059] Accurately obtain the total equivalent inductance of gold wire bonding (For a single gold wire) For double gold wires After that, the LC series resonance principle is used for compensation.

[0060] Calculation of compensation capacitor value:

[0061] At the target resonant frequency This causes the capacitive reactance of the compensation capacitor to cancel out the inductive reactance of the gold wire, achieving resonance. The resonance condition is:

[0062] ;

[0063] in, The required compensation capacitor value.

[0064] The required compensation capacitor value is derived. for:

[0065] ;

[0066] in, It is the target resonant frequency. .

[0067] Implementation of microstrip surface-mount capacitors:

[0068] The compensation capacitor This is achieved by designing a grounded wide microstrip patch on the PCB. The capacitance value of this patch, its physical dimensions, and the board material parameters can be preliminarily estimated using the parallel-plate capacitance formula:

[0069] ;

[0070] in, The relative permittivity of the substrate is . For the thickness of the medium, and These represent the width and length of the grounding patch, respectively. This formula provides a theoretical basis for the initial design; the final dimensions need to be determined through electromagnetic simulation.

[0071] The basic principles of bonded phase modulation include:

[0072] The phase shift introduced by a microstrip line to the electromagnetic wave signal transmitted through it. ), by its physical length ( ) and the guiding wavelength of electromagnetic waves in the microstrip line medium ( The ratio of is uniquely determined. This relationship is quantitatively described by the following key formula:

[0073] ;

[0074] in, It is the phase shift generated by the microstrip line, measured in degrees (°). ).

[0075] It is the physical length of the microstrip line, in meters (m). ) or millimeters ( ), It is the guiding wavelength of electromagnetic waves in a microstrip line, and the unit is meters (m). ) or millimeters ( ), guided wavelength Operating frequency and the effective dielectric constant of microstrip lines ( The calculation formula is jointly determined by:

[0076] ;

[0077] in, It is the speed of light in a vacuum (approximately ). It is the operating frequency of electromagnetic waves, and its unit is Hertz (Hz). It is the effective dielectric constant of the microstrip line, which is related to the dielectric constant of the PCB substrate. ), medium thickness ( ) and microstrip line width ( Related comprehensive parameters.

[0078] As a further aspect of the present invention, the phase modulation method is sequentially divided into a first phase modulation mode, a second phase modulation mode, a third phase modulation mode, and a fourth phase modulation mode.

[0079] First phase modulation mode reference Figure 4 In the middle (a): the first microstrip line P1 is bonded to the chip pin in a figure-eight gold wire configuration;

[0080] Second phase modulation mode reference Figure 4 (b) In the first phase modulation mode, the first microstrip line P0 and the second microstrip line P1 are bonded together using gold wire;

[0081] Third phase modulation mode reference Figure 4 (c) In the second phase modulation mode, gold wires are used to bond the first microstrip line P0 and the fourth microstrip line P3.

[0082] Fourth phase modulation mode reference appendix Figure 4 (d) In the third phase modulation mode, gold wires are used to bond the second microstrip line P1 and the third microstrip line P2.

[0083] Since continued bonding would increase return loss, there are only four phase modulation modes, with the fifth microstrip line P4 as a backup.

[0084] By sequentially adding connectors between the first microstrip line and the second, third, fourth, and fifth microstrip lines, the parasitic parameters introduced by the bonding of the connectors connecting the first microstrip line to the chip can be further compensated, and the phase of the entire link can be changed. This completes the topology design change of the traditional gold wire matching structure, overcomes the shortcomings of the traditional topology structure such as the inability to adjust the phase, and meets the application requirements of adjustable phase and high matching performance.

[0085] The following is for reference. Figure 5 This describes a coplanar waveguide structure with high matching performance. Its topology differs slightly from tuning-matched structures and it is primarily used for matching structures in inter-chip transmission lines. For example... Figure 5 As shown, the structure includes:

[0086] The microwave dielectric substrate J2 has a coplanar waveguide transmission line attached to the top layer, which provides a transmission path for chip interconnection in the TR component;

[0087] Coplanar waveguide transmission lines are used for long connections between chips. Shielding holes are added to both sides of the transmission line to shield against interference from other radio frequency and low frequency signals on the substrate inside the component. The matching block is located at the end of the coplanar waveguide transmission line and is directly connected to the 50-ohm coplanar waveguide transmission line.

[0088] The microwave dielectric substrate has microstrip lines attached to the top layer to provide transmission paths for chip interconnection in the TR component.

[0089] The first matching block M1 is fixedly installed at the top of the microwave dielectric substrate and is a T-shaped matching block;

[0090] The second matching block M2 is fixedly mounted on the top of the microwave dielectric substrate, on the same horizontal line as the first matching block M1, with a spacing of 0.1 mm. A rectangular block measuring 0.2mm;

[0091] The third matching block M3 is fixedly mounted on the top of the microwave dielectric substrate, symmetrical to the second matching block M2 about the center line of the first matching block M1, and maintains a distance of 0.1mm from the first matching block M1. A rectangular block measuring 0.2mm;

[0092] The first matching block M1 and the second matching block M2, and the first matching block M1 and the third matching block M3 are all interconnected with gold wire.

[0093] As a further embodiment of the invention: the microwave dielectric substrate is a Rogers 4350 multilayer microstrip dielectric substrate with a dielectric constant of 3.66, a loss tangent of 0.004, and a single-layer dielectric substrate thickness of 0.127 mm. The back of the dielectric substrate is a large area of ​​copper foil, the front is a microstrip wiring layer (including shielding holes), and the middle layer is a modulation circuit layer.

[0094] Compared with the traditional T-bonding structure, the bonding matching structure can eliminate the inductive parameters introduced when the transmission line is bonded to the chip, thus achieving a wideband, low-loss connection.

[0095] This invention also provides a TR component for a phased array radar, the architecture of which is shown in the attached figure. Figure 6 RF circuit diagram reference appendix Figure 7 The 16-channel TR component transmit and receive link includes a bonding matching circuit with the aforementioned adjustable phase, the 16-channel TR component transmit and receive link comprising:

[0096] The transmit link and the receive link together form a 16-channel TR component RF link. The transmit link amplifies the signal, while the receive link amplifies, phase-shifts, and attenuates the signal received from the antenna.

[0097] The transmit link on side A of the component consists of a first single-pole double-throw switch, a temperature compensator, a first low-noise amplifier, a second single-pole double-throw switch, a 1-to-2 power divider, two four-channel amplitude-phase multifunction chips, and eight power amplifier switch chips connected in series. Each four-channel amplitude-phase multifunction chip is connected to four power amplifier switch chips, resulting in a total of eight transmit channels on side A of the component.

[0098] The receiving link on component A consists of eight limiting low-noise amplifier chips, two four-channel amplitude-phase multifunction chips, a 1-to-2 power divider, a second single-pole double-throw switch, a second low-noise amplifier, and a first single-pole double-throw switch connected in series. Four limiting low-noise amplifier chips are connected in parallel to a four-channel amplitude-phase multifunction chip.

[0099] The transmit and receive links on both sides of component A and B have the same link structure as those on side A, and are arranged in a mirror image. There are a total of 8 receive channels on both sides of component A and B.

[0100] The adjustable phase bonding matching circuit is connected to each power amplifier switch chip via gold wire bonding, and the other end is connected to the microstrip line on the microwave dielectric board J1.

[0101] In the transmission link, the coplanar waveguide transmission line is located at the long connection between two devices, respectively between the coplanar waveguide transmission line on microwave dielectric board J2 and the first single-pole double-throw switch, between the first single-pole double-throw switch and the temperature compensator, between the first low-noise amplifier and the second single-pole double-throw switch, between the one-to-two power divider and the four-channel amplitude-phase multifunction chip, and between the four-channel amplitude-phase multifunction chip and the power amplifier switch chip.

[0102] In the receiving link, the coplanar waveguide transmission lines are located between the limiting low-noise amplifier chip and the four-channel amplitude-phase multifunction chip, between the amplitude-phase multifunction chip and the 1-to-2 power divider, between the second single-pole double-throw switch and the second low-noise amplifier, and between the second low-noise amplifier and the first single-pole double-throw switch.

[0103] The component uses a 6061 aluminum alloy cavity as the structural component of the entire circuit. This structural component is divided into side A and side B, corresponding to the front and back of the cavity. Side A and side B of the component are 180° flipped symmetrically and have the same structure and function.

[0104] The following explanation uses only component A as an example:

[0105] The first low-noise amplifier chip is used to adjust the link gain;

[0106] Temperature compensator chip, used to adjust the high and low temperature consistency of the transmit link;

[0107] A 1-to-2 power divider connects the common port of the TR component to two amplitude-phase multifunction chips;

[0108] There are four quad-channel amplitude-phase multifunction chips, with each chip controlling the amplitude and phase of the four channels.

[0109] Eight power amplifier switching chips are placed on eight channels respectively, serving as the final stage power amplifier chips of the transmit link to provide saturated transmit power and at the same time provide a switching link for the receiver;

[0110] Eight limiting low-noise amplifier chips are placed on eight channels respectively. The limiting low-noise amplifier chips and low-noise amplifiers are integrated together to provide high-power protection for the receiving link while ensuring the low noise figure of the components.

[0111] Although the invention has been described with respect to a limited number of embodiments, those skilled in the art will understand from the foregoing description that other embodiments are conceivable within the scope of the invention described herein. Furthermore, it should be noted that the language used in this specification has been chosen primarily for readability and instructional purposes, and not for the purpose of explaining or limiting the subject matter of the invention.

Claims

1. A bonding matching circuit with adjustable phase, characterized in that, include: Phase-adjustable bonding structures composed of microstrip lines and coplanar waveguides with high matching performance; The phase-adjustable bonding structure composed of microstrip lines includes an RF connector, a microwave dielectric substrate J1, gold wires, and a chip. The RF connector is used to connect the TR component and the antenna. The top layer of the microwave dielectric substrate J1 has microstrip lines attached to provide a transmission path for the signals inside the TR component. The gold wires are used to connect the microstrip lines and the chip pins.

2. The bonding matching circuit with adjustable phase according to claim 1, characterized in that, In the phase-adjustable bonding structure composed of microstrip lines, the RF connector is soldered to one end of the microstrip line on the microwave dielectric substrate J1, and the other end of the microstrip line is bonded to the pins of the chip through gold wires.

3. The bonding matching circuit with adjustable phase according to claim 2, characterized in that the microstrip line include: The first microstrip line P0 is fixedly mounted on the top of the microwave dielectric substrate J1; The second microstrip line P1 is fixedly mounted on the top of the microwave dielectric substrate J1. The second microstrip line P1 is collinear with the first microstrip line P0, and there is a 0.1mm gap between the two ends of the first microstrip line P0 and the second microstrip line P1. The second microstrip line P1 has a diameter of 0.15mm. A rectangular block of 0.35mm; The third microstrip line P2 is fixedly mounted on the top of the microwave dielectric substrate J1. The third microstrip line P2 is collinear with the first microstrip line P0, and there is a 0.1mm gap between the closest ends of the third microstrip line P2 and the second microstrip line P1. The third microstrip line P2 is 0.1mm... A rectangular block of 0.35mm; The fourth microstrip line P3 is fixedly mounted on the top of the microwave dielectric substrate J1. The fourth microstrip line P3 is collinear with the first microstrip line P0, and a 0.1mm gap is maintained between the closest ends of the two microstrip lines. The fourth microstrip line P3 has a length of 0.15mm. A rectangular block of 0.35mm; The fifth microstrip line P4 is fixedly mounted on the top of the microwave dielectric substrate J1. The fifth microstrip line P4 is collinear with the first microstrip line P0, and there is a 0.1mm gap between the closest ends of the fifth microstrip line P4 and the fourth microstrip line P3. The fifth microstrip line P4 is 0.1mm... A rectangular block of 0.35mm.

4. The bonding matching circuit with adjustable phase according to claim 3, characterized in that, The microwave dielectric substrate J1 is a Rogers 5880 single-layer microstrip dielectric substrate Sub with a dielectric constant of 2.2, a loss tangent of 0.0009, and a thickness of 0.127 mm. The back of the dielectric substrate is a large area of ​​copper foil, and the front is a microstrip wiring layer.

5. The bonding matching circuit with adjustable phase according to claim 4, characterized in that, The number of gold wires, i.e. connectors, is two or more. The connector between the first microstrip line and the chip is two gold wires with a diameter of 25μm.

6. The bonding matching circuit with adjustable phase according to claim 4, characterized in that, The phase modulation methods are divided into four phase modulation modes: the first phase modulation mode, the second phase modulation mode, the third phase modulation mode, and the fourth phase modulation mode. First phase modulation mode: The first microstrip line P1 is bonded to the chip pin in a figure-eight gold wire configuration; Second phase modulation mode: Based on the first phase modulation mode, the first microstrip line P0 and the second microstrip line P1 are bonded together using gold wires; Third phase modulation mode: Based on the second phase modulation mode, gold wires are used to bond the first microstrip line P0 and the fourth microstrip line P3. Fourth phase modulation mode: Based on the third phase modulation mode, gold wires are used to bond the second microstrip line P1 and the third microstrip line P2.

7. The bonding matching circuit with adjustable phase according to claim 4, characterized in that, Structures of coplanar waveguides with high matching performance include: The microwave dielectric substrate J2 has a coplanar waveguide transmission line attached to the top layer, which provides a transmission path for chip interconnection in the TR component; Coplanar waveguide transmission lines are used for long connections between chips. Shielding holes are added to both sides of the transmission line to shield against interference from other radio frequency and low frequency signals on the substrate inside the component. Matching blocks are located at the end of the coplanar waveguide transmission line and are directly connected to the coplanar waveguide transmission line. The first matching block M1 is fixedly installed at the top of the microwave dielectric substrate J2 and is a T-shaped matching block; The second matching block M2 is fixedly mounted on the top of the microwave dielectric substrate J2, on the same horizontal line as the first matching block M1, with a spacing of 0.1 mm. A rectangular block measuring 0.2mm; The third matching block M3 is fixedly mounted on the top of the microwave dielectric substrate J2, symmetrical to the second matching block M2 about the center line of the first matching block M1, and maintains a distance of 0.1mm from the first matching block M1. A rectangular block measuring 0.2mm; The first matching block M1 and the second matching block M2, and the first matching block M1 and the third matching block M3 are all interconnected with gold wire.

8. The bonding matching circuit with adjustable phase according to claim 7, characterized in that, The microwave dielectric substrate is a Rogers 4350 multilayer microstrip dielectric substrate with a dielectric constant of 3.66, a loss tangent of 0.004, and a single-layer dielectric substrate thickness of 0.127 mm. The back of the dielectric substrate is a large area of ​​copper foil, the front is a microstrip wiring layer, and the middle layer is a modulation circuit layer.

9. A TR component for a phased array radar, characterized in that, This includes a 16-channel TR component transmit and receive link having an adjustable phase bonding matching circuit according to any one of claims 1-8, the 16-channel TR component transmit and receive link comprising: The component consists of two sides, A and B. The transmission link of side A of the component is composed of a first single-pole double-throw switch, a temperature compensator, a first low-noise amplifier, a second single-pole double-throw switch, a 1-to-2 power divider, two four-channel amplitude-phase multifunction chips, and eight power amplifier switch chips connected in series. Each four-channel amplitude-phase multifunction chip is connected to four power amplifier switch chips. There are a total of 8 transmission channels on side A of the component. The transmission links on side B of the module have the same structure as those on side A of the module, and are arranged in a flipped symmetrical manner. There are a total of 8 transmission channels on side B of the module. The receiving link on side A of the component consists of eight limiting low-noise amplifier chips, two four-channel amplitude-phase multifunction chips, a 1-to-2 power divider, a second single-pole double-throw switch, a second low-noise amplifier, and a first single-pole double-throw switch connected in series. Four limiting low-noise amplifier chips are connected in parallel to one four-channel amplitude-phase multifunction chip. There are a total of 8 receiving channels on side B of the component. The receiving link on side B of the component has the same link structure as that on side A of the component, and they are arranged in a mirror image. There are a total of 8 receiving channels on side B of the component. The adjustable phase bonding matching circuit is connected to each power amplifier switching chip via gold wire bonding, and the other end is connected to the microstrip line on the microwave dielectric board J1. In the transmission link, the coplanar waveguide transmission line is located at the long connection between two devices, respectively between the coplanar waveguide transmission line on microwave dielectric board J2 and the first single-pole double-throw switch, between the first single-pole double-throw switch and the temperature compensator, between the first low-noise amplifier and the second single-pole double-throw switch, between the one-to-two power divider and the four-channel amplitude-phase multifunction chip, and between the four-channel amplitude-phase multifunction chip and the power amplifier switch chip; In the receiving link, the coplanar waveguide transmission lines are located between the limiting low-noise amplifier chip and the four-channel amplitude-phase multifunction chip, between the amplitude-phase multifunction chip and the 1-to-2 power divider, between the second single-pole double-throw switch and the second low-noise amplifier, and between the second low-noise amplifier and the first single-pole double-throw switch.

10. The TR component of the phased array radar according to claim 9, characterized in that, The component uses a 6061 aluminum alloy cavity as the structural component of the entire circuit. This structural component is divided into side A and side B, corresponding to the front and back of the cavity. Side A and side B of the component are 180° flipped symmetrically and have the same structure and function. Side A includes: The first low-noise amplifier chip is used to adjust the link gain; Temperature compensator chip, used to adjust the high and low temperature consistency of the transmit link; A 1-to-2 power divider connects the common port of the TR component to two amplitude-phase multifunction chips; Two four-channel amplitude-phase multifunction chips, with each chip controlling the amplitude and phase of the four channels; Eight power amplifier switching chips are placed on eight channels respectively, serving as the final stage power amplifier chips of the transmit link to provide saturated transmit power and at the same time provide a switching link for the receiver; Eight limiting low-noise amplifier chips are placed on eight channels respectively. The limiting low-noise amplifier chips and low-noise amplifiers are integrated together to provide high-power protection for the receiving link while ensuring the low noise figure of the components.

Images