Pre-mounting treatment device, mounting system, and pre-mounting treatment method

Abstract

The invention provides a pre-mounting processing device, a mounting system, and a pre-mounting processing method, which can restrain reduction of bonding strength at a bonding surface of an electronic component and a mounting substrate. A pre-mounting processing apparatus (300) according to an embodiment of the present invention comprises: a plasma processing apparatus (102) that accommodates a component supply body (TW) that mounts a sheet (T) having an adhesive surface (AS) on a ring (R) and that adheres a wafer (W) that is chipped into an electronic component (E) on the adhesive surface (AS) of the sheet (T) on the inside of the ring (R), and performs plasma processing before bonding the electronic component (E) to a mounting substrate (BW); and a hardening device (101) that hardens the exposed surface (Te) of the adhesion surface (AS) to which the electronic component (E) is not adhered by irradiating electromagnetic waves from the side of the sheet (T) to which the electronic component (E) is adhered before the plasma processing is performed by the plasma processing device (102).

Description

TECHNICAL FIELD

[0001] The present application relates to a pre-mounting processing apparatus, a mounting system, and a pre-mounting processing method. BACKGROUND

[0002] As a method of mounting an electronic component, i.e., a semiconductor chip, on a mounting substrate, there is direct bonding. The so-called direct bonding is a mounting method in which a mounting substrate and connection terminals of a semiconductor chip are directly bonded to each other without using a bonding member such as a solder bump. For example, the surfaces (protective films such as SiO2 films) of the mounting substrate and the semiconductor chip are terminated with hydroxyl groups. By bringing the surfaces into contact with each other and performing a pressurizing and heating process, the mounting substrate and the semiconductor chip are bonded to each other with hydrogen bonds of the hydroxyl groups, and finally become covalent bonds via oxygen atoms. Thus, the mounting substrate and the connection terminals of the semiconductor chip are diffusively bonded in a substantially integrated form.

[0003] "bonding" includes "temporary bonding" and "permanent bonding". The temporary bonding is to directly mount (bond) an electronic component on a mounting substrate, and the permanent bonding is to covalently bond the bonding surface of the temporarily bonded electronic component and the mounting substrate by annealing. In the following description, the "temporary bonding" is referred to as "mounting". In addition, in the following description, the "temporary bonding" is referred to as "bonding".

[0004] The semiconductor chip is an electronic component in which a wafer is diced to be small, and is an adhesive chip mounted on a ring. A member including the chip in which the diced wafer is adhered and the ring is referred to as a component supply. In addition, a wafer in which the electronic component is mounted from the component supply is referred to as a mounting substrate.

[0005] In the case where the electronic component of the component supply is directly bonded to the mounting substrate, the diced wafer and the mounting substrate are subjected to a pre-treatment and a cleaning process before that. In the pre-treatment, a surface treatment (activation treatment, cleaning treatment) is performed. The activation treatment is a treatment in which a surface of the electronic component and the mounting substrate is activated by active species such as ions and radicals generated by plasma of a reaction gas. The activation treatment is to cut chemical bonds of molecules of the surface, and is to etch an oxide film formed on the surface of the electronic component and the mounting substrate and to terminate the surface of the electronic component and the mounting substrate with hydroxyl groups. In addition, the cleaning treatment is a treatment in which a surface of the electronic component and the mounting substrate is cleaned by active species such as ions and radicals generated. The cleaning treatment is to repel and remove particles adhered to the surface or to decompose and remove organic substances.

[0006] In the following description, the activation treatment, the cleaning treatment using the plasma will be referred to as a surface treatment, and an apparatus that performs the surface treatment will be referred to as a plasma treatment apparatus. In addition, the plasma treatment apparatus can generally perform a treatment other than the surface treatment, and the treatment performed by the plasma treatment apparatus including the surface treatment will be referred to as a plasma treatment in a broad sense. In addition, the plasma treatment includes a reduction in pressure for generating plasma and an increase in pressure for releasing the reduction in pressure. In addition, the pre-treatment is sometimes referred to as a pre-mounting treatment. The cleaning treatment is a treatment for cleaning particles and the like present on the surface of an electronic component and a mounting substrate using a liquid such as water, and an apparatus that performs the cleaning treatment will be referred to as a cleaning apparatus.

[0007] [Related Art Documents]

[0008] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2020-021966 SUMMARY

[0010] [Problems to be Solved by the Invention]

[0011] However, in such direct bonding, a decrease in bonding strength at the bonding surface of the electronic component and the mounting substrate can sometimes occur. Such a decrease in bonding strength has a risk of causing a quality failure of a product manufactured by bonding (mounting) of the electronic component and the mounting substrate.

[0012] An object of an embodiment of the present application is to provide a pre-mounting treatment apparatus, a mounting system, and a pre-mounting treatment method that can suppress a decrease in bonding strength at the bonding surface of an electronic component and a mounting substrate.

[0013] [Technical Means to Solve the Problems]

[0014] The pre-mounting treatment apparatus of the embodiment has a plasma treatment apparatus that accommodates a component supply body in which a wafer having a sticking surface is mounted in a ring and a component is stuck to the sticking surface of the wafer in the inside of the ring, and performs plasma treatment before the electronic component is bonded to a mounting substrate, and a hardening treatment apparatus that irradiates an electromagnetic wave from a side of the wafer in which the electronic component is stuck to the sticking surface before the plasma treatment is performed by the plasma treatment apparatus, thereby hardening an exposed surface of the sticking surface in which the electronic component is not stuck.

[0015] The mounting system of the embodiment has the pre-mounting treatment apparatus, and a bonding portion that separates the electronic component treated by the pre-mounting treatment apparatus from the component supply body and mounts the electronic component on a mounting substrate.

[0016] The pre-mounting treatment method of the embodiment is a pre-mounting treatment method using the pre-mounting treatment device, and includes: an electromagnetic wave irradiation step in which the hardening treatment device hardens an exposed surface in the adhering surface of the sheet, which does not adhere to the electronic component, by irradiating electromagnetic waves from the side of the sheet to which the electronic component adheres; a conveyance step of conveying the component supply body from the hardening treatment device to the plasma treatment device; and a plasma treatment step in which the plasma treatment device performs plasma treatment before joining the electronic component to the mounting substrate.

[0017] [Effects of Invention]

[0018] The embodiment of the present application can suppress a decrease in the joining strength at the joining surface of the electronic component and the mounting substrate. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 (A) is a plan view showing the treatment of each part of the mounting system of the embodiment.

[0020] Figure 2 (A) of FIG. 1 is a plan view showing a component supply body, Figure 2 (B) of FIG. 1 is a sectional view of the component supply body, Figure 2 (C) of FIG. 1 is Figure 2 (B) of FIG. 1 is an enlarged view of the portion enclosed by the dashed line in (B).

[0021] Figure 3 (A) of FIG. 1 is a plan view showing a component supply body,

[0022] Figure 4 (A) of FIG. 1 is a plan view showing a component supply body, Figure 4 (B) of FIG. 1 is a plan view showing the conveyance in / out of the component supply body, Figure 4 (A) of FIG. 1 is a plan view showing a component supply body, Figure 4 (C) of FIG. 1 is a plan view showing the positional relationship between the component supply body and the irradiation device (light emitting element), Figure 4 (A) of FIG. 1 is a plan view showing a component supply body,

[0023] Figure 5 (A) of FIG. 1 is a plan view showing a component supply body,

[0024] Figure 6 (A) of FIG. 1 is a plan view showing a component supply body,

[0025] Figure 7 (A) of FIG. 1 is a plan view showing a component supply body,

[0026] Figure 8 (A) is a cross-sectional view of the part being irradiated with UV light in the hardening treatment apparatus. Figure 8 (B) is an enlarged view of a portion of the part supply body after UV irradiation.

[0027] Figure 9 It is a flowchart illustrating the action flow of the implementation method.

[0028] Figure 10 This is an explanatory diagram showing the processing of various parts of the installation system in a modified example.

[0029] Figure 11 It is a simplified perspective plan view showing the configuration of the installation system of the modified example.

[0030] Figure 12 (A) is a cross-sectional view of a plasma processing device equipped with an irradiation device. Figure 12 (B) is a plan view of the perimeter of the magnifying irradiation device.

[0031] Explanation of icon numbers

[0032] 1, 10, 11b: Chambers

[0033] 1d: Moving out / moving in

[0034] 1e: Door blocking

[0035] 2: Support section

[0036] 2a: Plate-like members

[0037] 2b: Shelf

[0038] 9: Irradiation device

[0039] 9a: Light-emitting element

[0040] 11a: Matrix

[0041] 11c: Loading port

[0042] 11d: Window component

[0043] 11e: Hole

[0044] 11f: Stop

[0045] 20: Platform

[0046] 21, 51: Drive Unit

[0047] 21a, 21b, 51a: Rod

[0048] 21c, 51b: Drive mechanism

[0049] 30: Gas inlet

[0050] 31: supply device

[0051] 31a: pipe

[0052] 40: plasma generator

[0053] 41: antenna

[0054] 42: power supply

[0055] 43: matching box

[0056] 50: mask

[0057] 50a: support shaft

[0058] 60: exhaust port

[0059] 61: pressure reducing device

[0060] 61a: pipe

[0061] 100: mounting system

[0062] 101: hardening treatment device

[0063] 102: plasma treatment device

[0064] 110: supply body cleaning device

[0065] 111: cleaning chamber

[0066] 111a: opening

[0067] 111b: shutter

[0068] 112: support portion

[0069] 113: rotation mechanism

[0070] 114: cup

[0071] 115: supply portion

[0072] 115a: nozzle

[0073] 115b, 192: moving mechanism

[0074] 120: mounting substrate cleaning device

[0075] 130: adjustment treatment device

[0076] 131: irradiation device

[0077] 140: measuring device

[0078] 150: alignment device

[0079] 160: Supply buffer device

[0080] 161, 171: Repository

[0081] 170: Install substrate buffer device

[0082] 180: Engaging device

[0083] 190: Conveying device (conveying part)

[0084] 191: Transport Robot

[0085] 191a: Robotic Arm

[0086] 200: Control device

[0087] 300: Pre-treatment device installation Detailed Implementation

[0088] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematic diagrams, and the dimensions, proportions, etc., of each part include exaggerated portions for ease of understanding.

[0089] [summary]

[0090] like Figure 1 , Figure 3 As shown, the mounting system 100 of this embodiment is an example of a system for mounting an electronic component E supplied by a component supplier TW onto a mounting substrate BW. The mounting system 100 includes a pre-mounting treatment unit X and a mounting unit Y. The pre-mounting treatment device 300, which carries out the pre-mounting treatment unit X, performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting substrate BW before mounting. The bonding device 180, which carries out the mounting unit Y, mounts the electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting substrate BW that has undergone pre-mounting treatment.

[0091] like Figure 2 (A) Figure 2 As shown in (B), the component supply body TW consists of a sheet T with an adhesive portion AD on its surface, which is supported (mounted) on a ring R, and an electronic component E is adhered (attached) to the sheet T. Regarding the component supply body TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center within the ring R of the sheet T. The wafer W is then miniaturized into an electronic component E. The electronic component E is, for example, a semiconductor chip. The sheet T is a thin, stretchable member containing resin, and its surface is provided with an adhesive portion AD, which contains a UV-curable resin whose adhesive strength can be reduced by irradiation with ultraviolet (UV) light.

[0092] like Figure 2As shown in (C), the sheet T is configured so that an adhering portion AD is provided on the surface of the substrate B, the adhering portion AD includes a hardened resin (for example, a UV hardened resin), and thus the surface of the adhering portion AD becomes an adhering surface AS on which the electronic component E is adhered. That is, the electronic component E is attached to the sheet T by being adhered to the adhering portion AD (adhering surface AS). In the adhering surface AS of the sheet T, the area other than the area on which the ring R and the electronic component E are adhered becomes an exposed surface Te. The exposed surface Te includes an exposed surface Teil between the ring R and the electronic component E and an exposed surface Te2 between the electronic component E and the electronic component E. That is, the exposed surface Te is a surface in the adhering surface AS on which the electronic component E is not adhered. In addition, the mounting substrate BW is a wafer (semiconductor wafer, substrate) W on which the electronic component E separated from the component supply TW is mounted (bonded).

[0093] The pre-mounting processing device 300 performs pre-mounting processing of the bonding surface of the electronic component E and the mounting substrate BW before the electronic component E is mounted on the mounting substrate BW. As shown in Figure 2 The pre-mounting processing device 300 of the present embodiment can perform pre-mounting processing (surface treatment) on the component supply TW and the mounting substrate BW, which are housed in a plurality of sheets in a conveyance container F such as a Front Opening Unified Pod (FOUP), a Front Opening Shipping Box (FOSB), and supplied from a device of a preceding process, sheet by sheet. In addition, the pre-mounting processing device 300 can include a cleaning device that performs cleaning processing on the electronic component E or the mounting substrate BW.

[0094] The mounting system 100 is configured by arranging a plurality of chambers 11b in which devices that perform various processes are housed around the base 11a of a box-shaped container that is a conveyance chamber. That is, the pre-mounting processing device 300 that assumes the pre-mounting processing portion X and the bonding device 180 that assumes the mounting portion Y are configured by the chambers 11b that perform various processes.

[0095] The base 11a is configured so that a not-shown Fan Filter Unit (FFU) is provided on the ceiling thereof, and a downflow formed of clean air is generated by the FFU, whereby the inside of the base 11a is maintained as a clean environment. Such an FFU can also be provided in the chamber 11b as necessary. A conveyance device 190 is provided inside the base 11a.

[0096] In addition, the substrate 11a is provided with a loading port 11c to which the conveyance container F is attached. The conveyance container F in which the unprocessed component supply TW or mounting substrate BW is housed is attached to the loading port 11c. One piece of the component supply TW or mounting substrate BW is taken out from the conveyance container F by the conveyance device 190. The component supply TW or mounting substrate BW taken out by the conveyance device 190 is carried into each chamber 11b, processed, and carried out.

[0097] The mounting system 100 of the present embodiment can have a buffer device that temporarily houses the component supply TW or mounting substrate BW. The buffer device can be included in the pre-mounting processing section X, or can be included in the mounting section Y.

[0098] More specifically, the mounting system 100 is a system including a hardening processing device 101, a plasma processing device 102, a supply cleaning device 110, a mounting substrate cleaning device 120, an adjustment processing device 130, a gauge device 140, an alignment device 150, a supply buffer device 160, a mounting substrate buffer device 170, a joining device 180, a conveyance device 190, and a control device 200. Further, the pre-mounting processing section X is configured by the hardening processing device 101, the plasma processing device 102, the supply cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauge device 140, the alignment device 150, the supply buffer device 160, the mounting substrate buffer device 170, the conveyance device 190, and the control device 200, and the mounting section Y is configured by the joining device 180 and the control device 200.

[0099] The hardening processing device 101 is a device that irradiates the exposed surface T with electromagnetic waves. The plasma processing device 102 is a device that performs surface processing of the component supply TW and mounting substrate BW (plasma processing section, surface processing section). The supply cleaning device 110 cleans the component supply TW, and the mounting substrate cleaning device 120 cleans the mounting substrate BW. The adjustment processing device 130 reduces the adhesion of the piece T of the component supply TW. The gauge device 140 positions the component supply TW, and the alignment device 150 positions the mounting substrate BW. The supply buffer device 160 temporarily houses the component supply TW, and the mounting substrate buffer device 170 temporarily houses the mounting substrate BW. The joining device 180 causes the electronic component E to be detached from the component supply TW and attached (mounted) to the mounting substrate BW. The conveyance device 190 conveys the component supply TW and mounting substrate BW between the sections and devices. Then, the control device 200 controls the sections of the mounting system 100. Details of the sections will be described later.

[0100] [Hardening Processing Device]

[0101] The hardening treatment device 101 is a device (hardening treatment section) that irradiates the exposed surface Te2 between the electronic components E in at least the adhered portion AD with electromagnetic waves from the side on which the electronic components E are adhered in the sheet T of the component supply body TW before plasma treatment by the plasma treatment device 102. In this way, the hardening treatment device 101 hardens the exposed surface Te of the sheet T of the component supply body TW before plasma treatment by irradiating the exposed surface Te with electromagnetic waves from the side on which the electronic components E are adhered, and suppresses the volatilization component that volatilizes at the time of plasma treatment. Furthermore, the hardening treatment device 101 can harden at least the exposed surface Te of the adhered portion AD by removing the portion of the adhered portion AD that is shielded from electromagnetic waves by the ring R and the electronic components E, and can harden all or a part of the adhered portion AD below the exposed surface Te in addition to the exposed surface Te, or can harden only the exposed surface Te.

[0102] In order to harden only the exposed surface Te, for example, it is sufficient to irradiate in a manner in which the electromagnetic waves are focused on the surface of the adhered portion AD. In the adhered portion AD in the vicinity of the focal point, it is sufficient that the energy required for the hardening resin to harden is sufficiently concentrated. Even if the electromagnetic waves reach a deep portion of the adhered portion AD, hardening does not start if the energy required for the hardening resin to harden is not present.

[0103] As described above, the hardening treatment device 101 irradiates electromagnetic waves that are energy that hardens the adhered portion AD. The energy of the electromagnetic waves that hardens the adhered portion AD does not have an energy that decomposes organic matter. For example, it is sufficient that the electromagnetic waves have a wavelength that does not generate ozone due to irradiation of the electromagnetic waves, such as electromagnetic waves having a wavelength of 315 nm to 400 nm. Furthermore, in the case of hardening only the exposed surface Te in a short time, electromagnetic waves having a wavelength of 254 nm can be irradiated. Electromagnetic waves having a wavelength of 254 nm do not easily penetrate into the inside of the hardening resin, and it is preferable to harden only the surface (exposed surface Te) of the hardening resin. As shown in FIG. 1, the hardening treatment device 101 has a chamber 1, a support section 2, and an irradiation device 9. Figure 4

[0104] The chamber 1 of the hardening treatment device 101 is a container that houses the component supply body TW before plasma treatment, and is one of the chambers 1 lb. The chamber 1 of the present embodiment is a container that has an opening in a side surface. The opening is a carry-in / carry-out port Id through which the component supply body TW is carried in and carried out, and is configured to be openable and closable by a shutter le.

[0105] The support section 2 supports the component supply body TW before plasma treatment that is housed in the chamber 1. The support section 2 of the present embodiment is a plate-shaped member that is fixed in the chamber 1 and supports the ring R of the component supply body TW via the sheet T. As shown in FIG. 1, the support section 2 of the present embodiment is a plate-shaped member that is fixed to the chamber 1 and supports the ring R of the component supply body TW via the sheet T. Figure 4 ​As shown in (B) of FIG. 6, the support portion 2 supports the ring R located just below the outer periphery of the sheet T, and thus the surface of the sheet T on the opposite side of the surface to which the wafer W is attached is open. In this embodiment, since the outer shape of the ring R is similar to and the same size as the outer shape of the sheet T, the support portion 2 supports the ring R via the sheet T. However, in a case where the outer shape of the ring R is larger than the outer shape of the sheet T, or in a case where a protrusion is provided in the radial direction of the ring R, or the like, the support portion 2 can directly support the ring R. That is, as long as the part supply body TW can be supported by supporting the ring R.

[0106] In addition, although not shown, a detection device that detects whether the part supply body TW is supported by the support portion 2 is provided in the chamber 1.

[0107] More specifically, as shown in (A) of FIG. 7, the support portion 2 includes a plate-shaped member 2a and a shelf 2b. The plate-shaped member 2a is an elongated plate-shaped member, for example, as shown in (B) of FIG. 7, is provided so that the long side direction is parallel to the direction in which the robot 191a is inserted into the chamber 1. The plate-shaped member 2a is fixed to the bottom surface in the chamber 1 and is provided along the two inner side surfaces of the chamber 1. A set of shelves 2b is provided to the surfaces of the two plate-shaped members 2a that face each other. Figure 4 Figure 4

[0108] The shelf 2b is a plate-shaped member that supports the ring R of the part supply body TW via the sheet T. The shelf 2b is in contact with and supports two portions near the outer edge of the ring R. Then, in the chamber 1, an electromagnetic wave is irradiated to the exposed surface Te of the part supply body TW supported by the support portion 2, and the volatilized components volatilized from the attachment portion AD at the time of plasma processing are suppressed. In addition, the support portion 2 can include a mechanism that elongates (expands) the sheet T of the part supply body TW.

[0109] The irradiation device 9 is disposed at a position facing the side of the sheet T of the part supply body TW to which the electronic part E is attached, and irradiates an electromagnetic wave toward the attachment portion AD of the sheet T to which the electronic part E is attached. Thereby, an electromagnetic wave is irradiated to all of the exposed surfaces Te in the sheet T of the part supply body TW. The irradiation device 9 is an ultraviolet irradiation device that irradiates ultraviolet rays as an electromagnetic wave. As shown in (A) of FIG. 8, the irradiation device 9 is provided in the chamber 1 of the hardening processing device 101. For example, as shown in (C) of FIG. 8, the irradiation device 9 can irradiate UV light to a prescribed region directly below the irradiation device 9 by disposing a plurality of UV light-emitting elements 9a. The irradiation device 9 of this embodiment is configured so that the irradiation region of the electromagnetic wave (UV light) can irradiate UV light to all of the exposed surfaces Te of the sheet T in the part supply body TW before plasma processing. Figure 4 Figure 4

[0110] ​​​​For example, by setting the irradiation region of the UV light to a region larger than the inner diameter of the ring R of the component supply body TW, the UV light can be irradiated to all of the exposed surfaces Te of the sheet T. In Figure 4 In the example shown in (C) of the UV light irradiation region is configured with the light emitting element 9a in a rectangular shape including the size of the ring R. Further, the UV light irradiation region is sometimes referred to simply as the irradiation region. In addition, the irradiation region can be circular in shape as long as it can irradiate the UV light to all of the exposed surfaces Te. In addition, the irradiation device 9 can include only one light emitting element 9a as long as it can irradiate the UV light of a strength that hardens at least the surface of the exposed surface Te in the adhering surface AS in the entire range of the irradiation region. In addition, an N2 gas introduction portion can be provided to make the inside of the chamber 1 an N2 environment, and oxygen inhibition can not occur. In the case of hardening only the exposed surface Te, it is preferable to make the inside of the chamber 1 an N2 environment.

[0111] [Plasma processing device]

[0112] The plasma processing device 102 is a device (surface treatment portion) that performs surface treatment on the bonding surface of the electronic component E and / or the mounting substrate BW using plasma before the electronic component E is mounted on the mounting substrate BW. The surface treatment is a treatment that activates and cleans the surface (bonding surface) of the joint (mounting) of the component supply body TW and the mounting substrate BW.

[0113] As shown in Figure 5 , the plasma processing device 102 of the present embodiment is provided with a stage 20, a gas introduction port 30, a plasma generator 40, a mask 50, and an exhaust port 60 in a chamber 10 that is capable of reducing the pressure inside the chamber 10. In addition, a load / unload port LN that loads and unloads the component supply body TW and the mounting substrate BW is provided in the chamber 10, and the load / unload port LN is configured to be openable and closable by a shutter SH. In Figure 5 , the shutter SH is indicated by a dashed line.

[0114] (Stage)

[0115] The stage 20 supports the component supply body TW or the mounting substrate BW. The stage 20 of the present embodiment receives the component supply body TW or the mounting substrate BW that is carried into the chamber 10 through the load / unload port LN that is opened by the shutter SH. The stage 20 of the present embodiment is configured to be a placement area of the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 toward the component supply body TW is set to be upward or upward movement, and the direction from the component supply body TW toward the stage 20 is set to be downward or downward movement.

[0116] As shown in Figure 5As shown, the stage 20 is provided with a drive section 21 that raises and lowers the component supply TW or mounting substrate BW. The drive section 21 has a rod 21a, a rod 21b, and a drive mechanism 21c. The rod 21a and the rod 21b are vertically movable rods that pass through the bottom of the chamber 10 in an airtight manner. The rod 21a is a rod that is provided with a plurality of rods at a position where the lower surface of the component supply TW can be supported and on which the component supply TW is placed so as to be carried in and out of the chamber 10. The rod 21b is a rod that is provided with a plurality of rods at a position where the lower surface of the mounting substrate BW can be supported and on which the mounting substrate BW is placed so as to be carried in and out of the chamber 10.

[0117] The drive mechanism 21c raises and lowers the component supply TW and the mounting substrate BW by moving the rod 21a and the rod 21b up and down.

[0118] (Gas introduction port)

[0119] The gas introduction port 30 is an opening that introduces a reaction gas into the chamber 10 that has been depressurized. The gas introduction port 30 is provided in the side surface of the chamber 11b so as to be able to introduce the reaction gas above the stage 20. The gas introduction port 30 is connected to a supply device 31 via a pipe 31a.

[0120] The supply device 31 supplies a reaction gas into the chamber 10 from the gas introduction port 30. As the reaction gas, for example, N2 gas is used. By using the reaction gas, cleaning that removes organic matter from the surface of the processing target and activation that etches an oxide film formed on the surface of the processing target and terminates the surface of the processing target with a hydroxyl group can be performed. In addition, the reaction gas is also used to flush the inside of the chamber 10. Hereinafter, the space into which the reaction gas is introduced is referred to as a gas space GA.

[0121] (Plasma generator)

[0122] The plasma generator 40 plasmaizes the reaction gas. By the plasmaization, active species such as ions and radicals are generated. Such active species activate or clean the surfaces of the component supply TW and the mounting substrate BW to which they are irradiated so as to be joined. As shown, the plasma generator 40 has an antenna 41, a power source 42, and a matching box 43. The antenna 41 is provided outside the chamber 10 and at a position corresponding to the upper portion of the gas space GA. A window member 11d is provided in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is a dielectric such as quartz. The antenna 41 generates plasma P based on inductive coupling in the gas space GA via the window member 11d by being applied with a high-frequency voltage. Figure 5

[0123] ​The power supply 42 is connected to the antenna 41, and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes discharge of the plasma P by matching the impedances of the input side and the output side.

[0124] (mask)

[0125] As Figure 5 shown, the mask 50 is provided in the chamber 10. The mask 50 exposes the diced wafers W (electronic parts E) of the part supply body TW, and covers a portion of the ring R and the sheet T. The mask 50 is configured to surround the periphery of the central diced wafer W in the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface Te1 of the sheet T and the upper surface of the ring R other than the region where the diced wafer W is adhered.

[0126] In the lower portion of the mask 50, a plurality of support shafts 50a are protruded along the inner side of the outer circumferential circle of the mask 50. The support shafts 50a are inserted into the holes 11e provided in the bottom of the chamber 10 in a manner that can be raised and lowered. A stopper 11f is provided at the upper edge of the hole 11e. The stopper 11f is a protruding portion formed in a manner that limits the lowering of the mask 50 to a prescribed height position. The stopper 11f of the present embodiment maintains the height of the mask 50 to be the same height as when the mask 50 covers the part supply body TW when the mounting substrate BW is placed.

[0127] The mask 50 is provided to be able to be raised and lowered by a driving portion 51. The driving portion 51 has a rod 51a, and a driving mechanism 51b. The rod 51a is a rod-shaped member that can be moved up and down and that penetrates the bottom of the chamber 10 in the vertical direction in an airtight manner.

[0128] The rod 51a is provided with a plurality of rods at a position that can support the lower surface of the mask 50. In the present embodiment, three rods 51a are protruded via the holes 11e and are in contact with the three support shafts 50a, respectively. That is, the hole 11e has a portion that is a through-hole through which the rod 51a penetrates. Further, in Figure 5 , in order to easily understand the operation, the support shaft 50a and the rod 51a that do not appear in the actual cross section are illustrated. The driving mechanism 51b raises and lowers the mask 50 by moving the rod 51a up and down. In addition, the other support shaft is forced downward by a force applying member, and the mask 50 is forced downward.

[0129] (exhaust port)

[0130] As Figure 5As shown, the exhaust port 60 is an opening for discharging gas (e.g., reaction gas) from the chamber 10. The exhaust port 60 of the present embodiment is provided at a side of the chamber 10. The exhaust port 60 is connected with a vacuum pump or the like decompression device 61 via a pipe 61a. The decompression device 61 decompresses the inside of the chamber 10 via the exhaust port 60. In addition, reaction gas is discharged from the inside of the chamber 10.

[0131] [Supply body cleaning device]

[0132] The supply body cleaning device 110 is a cleaning device (supply body cleaning section) that performs cleaning of the electronic parts E before and / or after plasma processing by the plasma processing device 102. The supply body cleaning device 110 of the present embodiment is a processing chamber that cleans the part supply body TW. The supply body cleaning device 110 performs cleaning processing that cleans particles present on the part supply body TW with a liquid such as water. In the present embodiment, particles remaining on the plasma-processed part supply body TW or particles generated due to plasma processing are cleaned with a cleaning liquid L. The cleaning target is the surface of the electronic parts E, the electronic parts E themselves, and the adhesive surface AS (exposed surface Te) of the sheet T, and particles adhering thereto are cleaned and removed. As shown in FIG. 1, the supply body cleaning device 110 is provided with a cleaning chamber 111 (chamber 1 lb) that performs cleaning processing inside, a support section 112 that supports the part supply body TW, a rotation mechanism 113 that rotates the support section 112, a cup 114 that receives cleaning liquid L scattered from the periphery of the part supply body TW, and a supply section 115 that supplies the cleaning liquid L. Figure 6

[0133] An opening 111a for carrying in / out the part supply body TW is provided in the cleaning chamber 111, and the opening 111a is configured to be opened and closed by a shutter 111b. The part supply body TW is carried in / out with respect to the cleaning chamber 111 via the opening 111a of the shutter 111b opened by the carrying device 190. At this time, the cup 114 is retracted by a not-shown lifting mechanism. The upper surface of the support section 112 includes an eccentric pin that rotatably holds the outer periphery of the part supply body TW. The supply section 115 is provided with a nozzle 115a that drips the cleaning liquid L, and a moving mechanism 115b that moves the nozzle 115a.

[0134] Cleaning processing is performed by supplying the cleaning liquid L to the processed surface of the part supply body TW held by the eccentric pin of the support section 112 and rotated by the rotation mechanism 113 from the nozzle 115a. The cleaning liquid L uses, for example, deionized water (DIW). In this case, water cleaning is performed while a hydroxyl group is imparted to the surface of the electronic parts E.

[0135] ​Further, although not shown, the rotating mechanism 113 of the supply body cleaning device 110 includes an expansion device. The expansion device (expansion section) elongates (expands) the pieces T of the electronic component supply body TW supported by the supported section 112 to expand the intervals of the electronic components E from each other. By being configured in this way, the supply body cleaning device 110 also cleans the particles present in the intervals of the electronic components E from each other.

[0136] [Mounting board cleaning device]

[0137] The mounting board cleaning device 120 is a cleaning device (mounting board cleaning section) that performs cleaning of the mounting board BW before and / or after the plasma treatment performed by the plasma processing device 102. The mounting board cleaning device 120 of the present embodiment is a processing chamber that cleans the mounting board BW. The mounting board cleaning device 120 performs cleaning processing of cleaning the particles present on the mounting board BW with a liquid such as water. In the present embodiment, the particles remaining on the mounting board BW subjected to the plasma treatment or the particles generated due to the plasma treatment are cleaned with the cleaning liquid L. The mounting board cleaning device 120 has, similarly to the supply body cleaning device 110 shown in FIG. 1, a cleaning chamber 111 that is a container in which cleaning processing is performed, a supported section 112 that supports the mounting board BW, a rotating mechanism 113 that rotates the supported section 112, a cup 114 that receives the cleaning liquid L scattered from the periphery of the mounting board BW, and a supply section 115 that supplies the cleaning liquid L. For example, in the case where the cleaning liquid L uses DIW, water cleaning can be performed while hydroxyl groups are imparted to the surface of the mounting board BW. Figure 6

[0138] [Adjustment processing device]

[0139] The adjustment processing device 130 is a device (adjustment processing section) that performs adjustment by irradiating the pieces T of the cleaned component supply body TW with UV light to reduce the adhesion of the pieces T. As shown in FIG. 3, the adjustment processing device 130 has an irradiation device 131 that irradiates UV light by causing a UV light source to scan the entire lower portion of the housed component supply body TW. Figure 1

[0140] [Measurement device]

[0141] The measurement device 140 is a device (measurement section) that positions the component supply body TW. The measurement device 140 is a contact type centering device that adjusts the position by contacting the outer periphery of the component supply body TW to make the center of the component supply body TW coincide with a reference position provided inside.

[0142] [Alignment device]

[0143] ​​The alignment device 150 is a device (alignment section) that positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with the reference position provided inside.

[0144] [Supply Buffer Device]

[0145] The supply buffer device 160 is a device (supply buffer section) that temporarily houses the component supply TW before being carried into the joining device 180. As shown in FIG. 1, the supply buffer device 160 has a storage 161 that can stack and house a plurality of component supplies TW at intervals. Figure 1

[0146] [Mounting Substrate Buffer Device]

[0147] The mounting substrate buffer device 170 is a device (mounting substrate buffer section) that temporarily houses the mounting substrate BW before being carried into the joining device 180. The mounting substrate buffer device 170 has a storage 171 that can stack and house a plurality of mounting substrates BW at intervals.

[0148] [Joining Device]

[0149] The joining device 180 is a processing chamber (joining section) included in the mounting section Y and causes the electronic component E to be detached from the component supply TW that has been processed by the plasma processing device 102 and mounted on the mounting substrate BW. The joining device 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism, not shown. The joining device 180 picks up the electronic component E of the component supply TW carried into the supply mechanism by the carrying device 190 by the pickup mechanism and delivers it to the mounting mechanism. The electronic component E is mounted on the mounting substrate BW carried into the joining device 180 by the carrying device 190 by the mounting mechanism. Further, as shown in FIG. 1, the joining device 180 of the present embodiment reverses the picked-up electronic component E and mounts the surface after the pre-mounting processing on the surface of the mounting substrate BW after the pre-mounting processing is completed. Figure 1

[0150] [Carrying Device]

[0151] The carrying device (carrying section) 190 carries the component supply TW, the mounting substrate BW between the loading port 11c and each chamber 11b, between each chamber 11b, and between the supply buffer device 160 and the mounting substrate buffer device 170 and the joining device 180. That is, the carrying by the carrying device 190 also includes carrying the component supply TW, the mounting substrate BW between the pre-mounting processing section X and the mounting section Y. As shown in FIG. 1, the carrying device 190 is a robot that has a plurality of arms 191. Figure 3 ​​As shown, the conveyance device 190 has a conveyance robot 191, a moving mechanism 192. The conveyance robot 191 is of a double-arm type, and a pair of hands 191a respectively support the component supply TW and the mounting substrate BW. The moving mechanism 192 moves and positions the conveyance robot 191 at the loading port 11c, the chambers 11b, and the bonding device 180. The hands 191a perform the conveyance of the component supply TW and the mounting substrate BW into and out of the respective conveyance containers F, the chambers 11b, and the bonding device 180.

[0152] [Control device]

[0153] The control device 200 is a computer (control section) that controls the respective sections of the mounting system 100. The control device 200 has a processor that executes a program, a memory that stores various information such as the program or the operation conditions, and a drive circuit that drives the respective components. That is, the control device 200 controls the hardening treatment device 101, the plasma treatment device 102, the supply body cleaning device 110, the mounting substrate cleaning device 120, the adjustment treatment device 130, the measurement device 140, the alignment device 150, the supply body buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the conveyance device 190. That is, the control device 200 is also a computer that controls the respective sections of the pre-treatment section X and the mounting section Y.

[0154] The control device 200 of the present embodiment, after detecting that the component supply TW is supported at the support section 2 by the detection device within the chamber 1, irradiates the component supply TW with UV by the irradiation device 9.

[0155] [Reason for reduction in bonding strength]

[0156] In direct bonding in which the electronic component E is directly bonded to the substrate without using a bonding member such as a solder bump, there are cases in which the bonding strength is reduced. There are various factors that affect the bonding strength, and as one of the factors that cause the reduction in the bonding strength, it is considered that the pre-treatment before mounting is insufficient. That is, it is considered that there are factors that hinder the bonding remaining at the bonding surface of the electronic component E and the mounting substrate BW.

[0157] Therefore, the factors in the pre-treatment were investigated. Among them, the influence of plasma treatment was investigated. As a result, it was found that, regarding the pressure change in the plasma treatment, there is a difference between the case in which the component supply TW is subjected to plasma treatment and the case in which the mounting substrate BW is subjected to plasma treatment. In the plasma treatment of the component supply TW, a pressure fluctuation that is not observed in the case in which the mounting substrate BW is subjected to plasma treatment occurs at the end of the surface treatment by plasma.

[0158] Figure 7One example of a change in pressure in the chamber 10 at the time of pressure reduction is shown in FIG. 6. Figure 7 is a graph in which the vertical axis is pressure and the horizontal axis is time. The surface treatment using plasma is performed in an environment in which pressure is reduced. Therefore, first, the chamber 10 is reduced in pressure, and the surface treatment using plasma is started when a prescribed pressure is reached. In the present embodiment, the prescribed pressure is referred to as a base pressure.

[0159] Figure 7 The change (shift) in pressure in the chamber 10 at the time of plasma treatment of the part supply body TW in the plasma processing apparatus 102 is shown in FIG. 7. As shown in FIG. 7, if the pressure in the chamber 10 is reduced to the base pressure, the reaction gas that is plasma-ized is introduced into the chamber 10. By the introduction of the reaction gas, the pressure in the chamber 10 rises to a surface treatment pressure. Figure 7

[0160] Furthermore, as shown by the substantially front-side surface straight line in FIG. 7, by the balance of the exhaust and the introduction, it is maintained constant at the surface treatment pressure. In this state, the reaction gas is plasma-ized by the application of power. By the active species that is generated by the plasma-ization of the reaction gas, the surface treatment of the part supply body TW that is carried into the plasma processing apparatus 102 is performed. After a prescribed processing time to has elapsed, the surface treatment using plasma is ended. The supply of the reaction gas is stopped, and the application of power is stopped. Then, the pressure in the chamber 10 is reduced by the continued exhaust. Then, the exhaust is also stopped and the atmosphere is introduced, whereby the chamber 10 is raised in pressure to the atmospheric pressure. Thus, the plasma processing is ended. Figure 7

[0161] Figure 7 The pressure fluctuation observed at the end of the surface treatment of the part supply body TW is shown by the circle in FIG. 7. The fluctuation in the surface treatment pressure is not observed in the case of the surface treatment of the mounting board BW. The present inventors and others have focused on the change in amplitude caused by the increase and decrease in pressure in the surface treatment.

[0162] The structure of the part supply body TW is different from that of the mounting board BW. The part supply body TW is one in which a small-sized wafer (semiconductor wafer) W is adhered to a sheet T mounted to a ring R. In contrast, the mounting board BW is one that is a board of only semiconductor wafers. There is a difference between the two in the presence or absence of the sheet T. Therefore, it is presumed that the pressure fluctuation in the surface treatment of the part supply body TW is caused by the sheet T.

[0163] ​​The adhesive portion AD of the sheet T uses a member that holds the electronic component E and whose adhesiveness disappears when the electronic component E is peeled at the time of mounting. In such a member, a hardening resin such as a UV hardening resin or a thermal hardening resin is used. At the time of mounting, before the electronic component E is about to be peeled from the sheet T, an operation of hardening the resin to make the adhesiveness disappear is performed. Therefore, until then, the resin is in an unhardened state in order to hold the electronic component E. Moisture easily dissolves in the resin in the unhardened state. In addition, the sheet T itself is also resin and absorbs moisture.

[0164] If the component supply body TW having such a member is subjected to plasma processing, first, as the pressure is reduced, volatile components such as the adhesive portion AD, moisture absorbed by the sheet T, moisture dissolved in the resin, solvent components (volatile adhesive components) start to volatilize. If surface processing by plasma starts, the temperature of the component supply body TW rises due to the heat of the plasma. Due to this, the temperature of the sheet T or the adhesive portion AD of the surface thereof, that is, the hardening resin gradually rises, and further, moisture absorbed by the sheet T, moisture dissolved in the resin or solvent components, resin components themselves and the like volatilize as gas. Therefore, it is considered that after a certain degree of surface processing time elapses, pressure variation due to volatilized gas (volatile components) occurs.

[0165] In addition, if volatilization occurs from the sheet T or the adhesive portion AD, that is, the hardening resin and the like, the temperature thereof decreases due to the heat of vaporization, and thus volatilization stops. If volatilization stops, volatilization again occurs due to the heat of the plasma. It is presumed that the pressure variation of the vibration is observed by the repetition.

[0166] The volatile components (volatile adhesive components) volatilized from the sheet T or the adhesive portion AD of the component supply body TW containing resin generally contain carbon. Furthermore, substances with small molecular weights easily volatilize. It is presumed that if volatile components containing carbon with small molecular weights volatilize from the component supply body TW at the time of surface processing by plasma, they are taken into the plasma environment and ionized. The ionized volatile components collide with and react with a part of the surface of the electronic component E. It is presumed that a compound or a carbon-containing functional group is formed at the part of the surface of the electronic component E that reacts with the ionized volatile components, and the part is inert. The compound or the carbon-containing functional group cannot be removed even by cleaning by the supply body cleaning device 110. As a result, it is presumed that a decrease in the joining strength at the joining surface of the component supply body TW and the mounting substrate BW occurs.

[0167] That is, the reduction in the joining strength is considered in view of various factors. As one of the factors, a case where the surface treatment of the component supply body TW with plasma becomes insufficient is considered to be due to the volatilization of the volatilization component from the sheet T or the adhesive portion AD. The case where such a reduction in the joining strength occurs can be said to be a failure in the pre-mounting process. In addition, it can also be said to be a failure in the mounting process.

[0168] [Inhibition of hindering factor of joining]

[0169] According to the above observation and speculation, in order to inhibit one of the hindering factors of joining, it is sufficient to inhibit the volatilization component, particularly the volatilization component that is the hardenable resin component itself of the adhesive portion AD and contains carbon having a small molecular weight (volatilized adhesive component), from the component supply body TW in advance before the surface treatment is performed. Therefore, the mounting system 100 of the present embodiment, as shown in FIG. 1, hardens the adhesive portion AD in the sheet T and the adhesive portion AD directly below the exposed surface Te of the sheet T with the hardening treatment device 101 before the surface of the electronic component E is activated and cleaned with the plasma treatment device 102 of the pre-mounting process device 300, and inhibits the volatilization of the volatilization component from the adhesive portion AD. Figure 8

[0170] If the UV light LI is irradiated to the adhesive portion AD of the sheet T, the adhesive portion AD to which the UV light LI is irradiated absorbs the energy of the UV light LI and becomes an excited state, and a photopolymerization reaction is caused. Then, the volatilization component containing carbon having a small molecular weight becomes a substance having a large molecular weight (polymer). At this time, if it becomes a polymer by the photopolymerization reaction, the melting point is increased compared to the volatilization component containing carbon having a small molecular weight, and thus it hardens from a liquid to a solid. That is, by hardening the volatilization component volatilized from the adhesive portion AD that has not been hardened, the volatilization from the adhesive portion AD (exposed surface Te) is inhibited.

[0171] That is, in order to not cause the volatilization of the unnecessary component in the surface treatment with plasma, the amount of the volatilization component generated from the component supply body TW is reduced in advance to an amount that does not affect the joining strength before the surface treatment is performed. That is, it is not necessary to be completely free from the volatilization component. This operation is referred to as an electromagnetic wave irradiation process. Furthermore, here, the so-called non-affecting of the joining strength is that the joining strength at the joining surface of the component supply body TW and the mounting substrate BW does not decrease compared to the required prescribed strength. The so-called prescribed strength is the joining strength obtained when the joining surface of the component supply body TW and the mounting substrate BW finally becomes a covalent bond via oxygen atoms to be joined in a substantially integrated form after the temporary joining in the mounting process and the annealing process is performed. The relationship of such a joining strength and the volatilization amount can be confirmed in advance by experiments and the like.

[0172] ​For example, it is acceptable as long as the exposed surface Te in the adhesive surface AS of the adhesive part AD can be hardened until the amount of volatile components generated from the part supply body TW evaporates to an amount that does not affect the bond strength (a certain amount that does not lead to a decrease in bond strength). Figure 8 As shown, in this embodiment, the mounting system 100 irradiates the component supply body TW with UV light LI from above within the hardening treatment apparatus 101. Specifically, the irradiation apparatus 9 irradiates the adhesive portion AD of the sheet T with UV light LI through the electronic component E. Therefore, the electronic component E acts as a mask, and the adhesive portion AD of the sheet T in contact with the electronic component E does not harden. Thus, after hardening treatment by the irradiation apparatus 9, the adhesive portion AD of the sheet T in contact with the electronic component E remains unhardened, and its adhesive strength does not decrease.

[0173] [action]

[0174] In addition to the above Figures 1 to 8 In addition, refer to Figure 9 The flowchart below explains the operation of the mounting system 100 of this embodiment as described above. A mounting method for mounting electronic components E onto the mounting substrate BW via the following process is also a form of this embodiment. Furthermore, the following description is based on... Figure 9 The flowchart shows that each process includes states that occur simultaneously and in parallel.

[0175] like Figure 3 As shown, a transport container F containing a component supply body TW and a transport container F containing a mounting base plate BW are mounted on a loading port 11c. The transport robot 191 of the transport device 190 receives the component supply body TW from the transport container F in the loading port 11c and transports the component supply body TW to the hardening treatment device 101.

[0176] The hardening treatment apparatus 101 irradiates the sheet T in the part supply body TW with electromagnetic waves to suppress the evaporation of volatile components from the adhesive portion AD of the sheet T during the subsequent surface treatment using the plasma treatment apparatus 102 (electromagnetic wave irradiation process: step S100). First, the stop door 1e of the chamber 1 is opened, and the manipulator 191a of the transfer robot 191 supporting the part supply body TW is inserted from the loading / unloading inlet 1d. The manipulator 191a mounts the part supply body TW onto the support portion 2 (see reference). Figure 4 With the gate 1e closed, UV light is irradiated through the irradiation device 9. As a result, the hardening resin on the exposed surface Te of the adhesive part AD is hardened, and in the subsequent surface treatment using the plasma treatment device 102, the evaporation of volatile components from the adhesive part AD is suppressed.

[0177] After the UV light is irradiated, the shutter door 1e is opened, and the robot arm 191a of the transfer robot 191 is inserted from the carry-in / out port 1d to receive the component supply body TW supported by the support section 2. The robot arm 191a carries the component supply body TW out of the chamber 1 from the carry-in / out port 1d, and then the shutter door 1e is closed. Then, the robot arm 191a delivers the component supply body TW to the plasma processing apparatus 102 (a transfer process).

[0178] The plasma processing apparatus 102 activates and cleans the surface of the electronic component E by plasma processing (a supply body surface processing process (a plasma process): Step S101). First, the driving section 51 raises the rod 51a to raise the mask 50 against the urging force of the urging member. By raising the mask 50, the mask 50 is retracted so as not to interfere with the entry of the robot arm 191a of the transfer robot 191 into the chamber 10. Next, the shutter door SH is opened, and the robot arm 191a of the transfer robot 191 supporting the component supply body TW is inserted from the carry-in / out port LN. The robot arm 191a positions the component supply body TW above the rod 21a.

[0179] The driving mechanism 21c raises the rod 21a to lift the component supply body TW from the robot arm 191a, and the robot arm 191a is retracted. After the robot arm 191a is retracted, the shutter door SH is closed. Also, the decompression device 61 makes the inside of the chamber 10 vacuum by exhausting the inside of the chamber 10.

[0180] The driving mechanism 21c lowers the rod 21a to place the component supply body TW on the stage 20. Further, the driving section 51 lowers the rod 51a to lower the mask 50 by the urging force of the urging member. Then, the mask 50 comes into contact with the ring R to stop. Thus, the mask 50 covers the ring R and the sheet T.

[0181] In the state, as shown in Figure 5 The supply device 31 supplies the reaction gas to the gas space GA, and the power source 42 applies high-frequency power to the antenna 41, whereby plasma P is generated in the gas space GA. By plasma-izing the reaction gas, active species such as ions and radicals are generated, and the surface of the electronic component E is activated and cleaned by the active species. The reaction gas is exhausted from the exhaust port 60 by the decompression device 61. The active species (indicated by arrows in the drawing) intended to go outside the outer periphery of the wafer W, that is, the exposed surface Te1, is prevented from coming into contact with the exposed surface Te1 by the mask 50. Thus, the exposed surface Te1 can be prevented from being etched by the active species. The control device 200 ends the surface processing by plasma when it is determined that the surface processing time (to) has elapsed. In this way, the plasma processing apparatus 102 activates and cleans the surface of the component supply body TW by surface processing (a supply body surface processing process: Step S101).

[0182] After the surface treatment of the component supply body TW, the driving section 51 raises the rod 51a. The driving section 51 raises the mask 50 against the force of the force applying member, thereby distancing the mask 50 from the ring R. The component supply body TW is lifted by raising the rod 21a of the driving mechanism 21c. The shutter SH is opened, and the robot hand 191a is inserted from the carry-in / out port LN. The rod 21a of the driving mechanism 21c is lowered to place and deliver the component supply body TW to the robot hand 191a of one of the two arms. Then, the robot hand 191a carries out the component supply body TW from the carry-in / out port LN.

[0183] Further, during the surface treatment of the component supply body TW, the transfer robot 191 receives the mounting substrate BW from the transfer container F to the other robot hand 191a of the two arms. The transfer robot 191 receives the component supply body TW from the rod 21a of the plasma processing apparatus 102 and delivers the mounting substrate BW to the plasma processing apparatus 102. The plasma processing apparatus 102 activates and cleans the surface of the mounting substrate BW by plasma processing (mounting substrate surface treatment step: step S102).

[0184] The flow of the plasma treatment of the mounting substrate BW is the same as that of the supply body surface treatment step. In the case of the mounting substrate BW, the electromagnetic wave irradiation step is not performed and only the surface treatment using plasma is performed.

[0185] The transfer robot 191 delivers the surface-treated component supply body TW to the support section 112 of the supply body cleaning apparatus 110. The supply body cleaning apparatus 110 rotates the surface-treated component supply body TW delivered to the support section 112 by the support section 112 and the rotating mechanism 113 while supplying the cleaning liquid L to the component supply body TW. Thus, the component supply body TW is cleaned (supply body cleaning step: step S103). Thus, the particles generated due to the etching action of the surface treatment using plasma are removed. Further, at this time, the pieces T of the component supply body TW are expanded by the expansion apparatus, and the cleaning is performed in a state where the intervals of the electronic components E are expanded. The cleaning is performed by supplying the cleaning liquid L, and thereafter, high-speed rotation is performed, and the cleaning liquid L is spun off to perform drying. After the drying, the expansion apparatus releases the pieces T to contract them to the original state, and the intervals of the electronic components E are restored to the original state.

[0186] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 102 is completed, the conveyance robot 191 receives the mounting substrate BW from the plasma processing apparatus 102. The conveyance robot 191 transfers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 rotates the mounting substrate BW while supplying the mounting substrate BW with the cleaning liquid L. Thus, the mounting substrate BW is cleaned (mounting substrate cleaning step: Step S104). After the cleaning liquid L is supplied for cleaning, the cleaning liquid L is spun off by high-speed rotation to perform drying. The mounting substrate cleaning step includes a state in which the supply body cleaning step is performed simultaneously. That is, the time for cleaning the component supply body TW overlaps with the time for cleaning the mounting substrate BW.

[0187] After the cleaning treatment of the component supply body TW is completed, the conveyance robot 191 receives the component supply body TW from the supply body cleaning apparatus 110 and transfers it to the gauge measuring apparatus 140. The gauge measuring apparatus 140 performs alignment of the component supply body TW (positioning step: Step S105). After the alignment is completed, the conveyance robot 191 receives the component supply body TW from the gauge measuring apparatus 140 and transfers it to the adjustment processing apparatus 130. The adjustment processing apparatus 130 performs adjustment processing in which the adhesion of the sheet T is reduced by irradiating the component supply body TW with UV light (adjustment step: Step S106). The positioning step and the adjustment step overlap with the mounting substrate cleaning step.

[0188] After the cleaning treatment of the mounting substrate BW is completed, the conveyance robot 191 receives the mounting substrate BW from the mounting substrate cleaning apparatus 120 and transfers it to the alignment apparatus 150. The alignment apparatus 150 performs alignment of the mounting substrate BW (positioning step: Step S107).

[0189] After the adjustment processing is completed, the conveyance robot 191 receives the component supply body TW from the adjustment processing apparatus 130 and transfers it to the supply body buffer apparatus 160. After the alignment of the mounting substrate BW is completed, the conveyance robot 191 receives the mounting substrate BW from the alignment apparatus 150 and transfers it to the mounting substrate buffer apparatus 170.

[0190] Thus, the component supply TW and the mounting board BW are housed in the supply buffer 160 and the mounting board buffer 170 (housing step: Step S108). After the component supply TW and the mounting board BW are housed, the component supply TW and the mounting board BW are received by the conveyance robot 191 and delivered to the bonding device 180, if the bonding device 180 is able to accept. That is, the component supply TW and the mounting board BW are taken out of the supply buffer 160 and the mounting board buffer 170 by the conveyance robot 191 in accordance with an acceptance signal generated by the completion of processing from the bonding device 180. Then, the component supply TW and the mounting board BW are carried into the bonding device 180 by the conveyance robot 191. In the bonding device 180, the electronic component E is picked up from the component supply TW and mounted on the mounting board BW (mounting step: Step S109).

[0191] [Effects]

[0192] (1) The mounting-preprocessing device 300 of the present embodiment has: a plasma processing device 102 that houses a component supply TW in which a wafer T having an adhesive surface AS is mounted in a ring R and a wafer W that is diced into electronic components E is adhered to the adhesive surface AS of the wafer T in the inside of the ring R, and performs plasma processing before the electronic components E are bonded to a mounting board BW; and a hardening processing device 101 that irradiates an electromagnetic wave from a side of the wafer T to which the electronic components E are adhered before plasma processing is performed by the plasma processing device 102, thereby hardening an exposed surface Te of the adhesive surface AS to which the electronic components E are not adhered.

[0193] The mounting system 100 of the present embodiment has: the mounting-preprocessing device 300; and the bonding device 180 that separates the electronic components E processed by the mounting-preprocessing device 300 from the component supply TW and mounts the electronic components E on the mounting board BW.

[0194] The mounting-preprocessing method of the present embodiment includes: an electromagnetic wave irradiation step in which the hardening processing device 101 hardens an exposed surface Te of an adhesive surface AS to which the electronic components E are not adhered by irradiating an electromagnetic wave from a side of a wafer T to which the electronic components E are adhered; a conveyance step in which the conveyance device 190 conveys the component supply TW from the hardening processing device 101 to the plasma processing device 102; and a plasma processing step in which the plasma processing device 102 performs plasma processing before the electronic components E are bonded to a mounting board BW.

[0195] Therefore, before the surface treatment using plasma, the adhesive portion AD of the sheet T is irradiated with electromagnetic waves through the ring R and the electronic component E, whereby the exposed surface Te is hardened. As a result, the volatilization of the volatile components can be suppressed in the plasma processing device 102. In other words, when the surface treatment using plasma is performed, the amount of volatilization of the volatile components from the component supply body TW can be reduced. Therefore, the volatile components volatilized from the component supply body TW can be suppressed from being bonded to the surface of the electronic component E of the component supply body TW in the form of a compound or a functional group containing carbon.

[0196] That is, the activity and the clean state of the surface of the electronic component E are not contaminated by the volatile components volatilized from the sheet T. In particular, the volatile components (volatilized adhesive components) that are the hardened resin components of the adhesive portion AD in the sheet T and contain carbon having a small molecular weight do not contaminate. Therefore, the reduction in the joining strength at the joining surface of the component supply body TW and the mounting substrate BW can be suppressed. In addition, even in the case where only the exposed surface Te is hardened, the volatilization from the unhardened portion of the adhesive portion AD can be suppressed.

[0197] In addition, depending on the kind of the sheet T, when the adhesive portion AD of the sheet T is irradiated with electromagnetic waves, there is a risk that the volatile components are generated from the adhesive portion AD. The volatile components volatilized from the component supply body TW can be removed in the chamber 1 of the hardening processing device 101 different from the plasma processing device 102. By providing such a structure, the inside of the plasma processing device 102 can be prevented from being contaminated by the volatile components volatilized from the component supply body TW.

[0198] (2) The hardening processing device 101 has an irradiation device 9 disposed at a position facing the side of the sheet T of the component supply body TW to which the electronic component E is adhered, and irradiates the adhesive portion AD of the sheet T to which the electronic component E is adhered with electromagnetic waves. Thereby, as described above, the irradiation device 9 can irradiate the adhesive portion AD with electromagnetic waves from the side of the sheet T to which the electronic component E is adhered, and harden the exposed surface Te of the adhesive portion AD to which the electronic component E is not adhered.

[0199] (3) The hardening processing device 101 has an irradiation device 9 that irradiates ultraviolet rays as electromagnetic waves. Therefore, the region of the adhesive portion AD that is shielded by the electronic component E is not hardened, and the exposed surface Te can be reliably hardened, and the detachment of the electronic component E can be prevented.

[0200] [Modified Example]

[0201] The mounting-preprocessing device 300 of the present embodiment as described above can also be configured as a modified example as described below.

[0202] (1) A hardening treatment device 101 may also be provided in the plasma processing apparatus 102. For example, the hardening treatment device 101 may be provided near the loading / unloading inlet LN of the chamber 11b of the plasma processing apparatus 102, in such a way that electromagnetic waves can be irradiated onto the exposed surface Te of the sheet T in the part supply body TW that is loaded into the chamber 10. More specifically, such as Figure 10 , Figure 11 , Figure 12 As shown, the irradiation device 9 is positioned above the loading / unloading inlet LN on the outer side of the chamber 10, with the area below it designated as the irradiation zone. This arrangement allows electromagnetic waves to be irradiated onto the part supply body TW passing directly below the loading / unloading inlet LN. In this configuration, the irradiation device 9 constitutes the hardening treatment apparatus 101.

[0203] That is, the hardening treatment apparatus 101 can be constructed using only the irradiation device 9. The hardening treatment apparatus 101 (irradiation device 9) uses an irradiation area defined by arranging multiple light sources in a direction orthogonal to the loading / unloading direction of the part supply body TW. In other words, a linear irradiation device 9 is used, making the irradiation area a straight line. Furthermore, in this case, the process of transporting the part supply body TW through the stage 20 directly below the irradiation device 9 and towards the chamber 11b of the plasma processing apparatus 102 using the transport device 190 is called a "transport process." Additionally, an "electromagnetic wave irradiation process" is performed during the period when the part supply body TW passes directly below the irradiation device 9 using the transport device 190.

[0204] Thus, the conveying process and the electromagnetic wave irradiation process can also be carried out simultaneously and in parallel. That is, the conveying process and the electromagnetic wave irradiation process can be carried out after the electromagnetic wave irradiation process, or after the conveying process, or they can be carried out simultaneously and in parallel.

[0205] like Figure 12 (A) Figure 12 As shown in (B), when the robotic arm 191a supporting the part supply body TW enters the chamber 10 from the loading / unloading inlet LN, UV light is irradiated onto the sheet T within the ring R by the irradiation device 9. This hardens the exposed surface Te of the sheet T, thereby suppressing the volatilization of volatile components within the plasma processing apparatus 102. Therefore, the amount of volatile components volatilized from the sheet T can be reduced during plasma processing.

[0206] Further, as long as the irradiation device 9 does not shield active species generated by the plasma from the part supply body TW, the irradiation device 9 can also be disposed at the upper portion of the load / unload port LN of the inner side surface of the chamber 10 in a manner capable of irradiating the part supply body TW intruding into the chamber 10 with electromagnetic waves. In this case, the process of carrying the part supply body TW by the conveyance device 190 through the irradiation device 9 directly below and toward the stage 20 inside the chamber 10 of the plasma processing device 102 is referred to as a "conveyance process". Further, the "electromagnetic wave irradiation process" is performed during the period when the part supply body TW is carried by the conveyance device 190 through the irradiation device 9 directly below.

[0207] (2) The linear irradiation device 9 as described above can also be disposed in the chamber 1 of the hardening processing device 101 in a manner capable of moving in the horizontal direction above the part supply body TW. That is, by moving the linear irradiation device 9 above the part supply body TW supported by the support 2 while irradiating the sheet T with UV light, the exposed surface Te in the sheet T is hardened, and the volatilization of the volatile component inside the plasma processing device 102 can be suppressed. Further, the linear irradiation device 9 can also be disposed in a manner capable of moving in the horizontal direction above the part supply body TW inside the chamber 1 lb of the plasma processing device 102. That is, by moving the linear irradiation device 9 above the part supply body TW placed on the stage 20 while irradiating the sheet T with UV light, the exposed surface Te in the sheet T is hardened, and the volatilization of the volatile component inside the plasma processing device 102 can be suppressed.

[0208] In this case, the plasma processing device 102 is configured without the mask 50, and the exposed surface Te1 of the sheet T inside the chamber 1 lb of the plasma processing device 102 is in an exposed state. Alternatively, the mask 50 is configured of quartz, and UV light is irradiated to the exposed surface Te1 of the sheet T through the mask 50. Further, in this case, the process of carrying the part supply body TW by the conveyance device 190 through the irradiation device 9 directly below and toward the stage 20 inside the chamber 1 lb of the plasma processing device 102 is referred to as a "conveyance process". Further, the process of moving the linear irradiation device 9 above the part supply body TW placed on the stage 20 while irradiating the sheet T with UV light is referred to as an "electromagnetic wave irradiation process".

[0209] (3) In the illustrated embodiment, the mask 50 of the plasma processing apparatus 102 is configured to be raised and lowered from below, but can also be configured to be raised and lowered from above. For example, during movement of the irradiation apparatus 9, the mask 50 is retracted to a position above the chamber 10 of the plasma processing apparatus 102 and further above the irradiation apparatus 9. In this case, the mask 50 is retracted in a manner that does not interfere with movement of the linear irradiation apparatus 9, and thus the mask 50 is not limited to a material such as quartz that transmits UV light, and the linear irradiation apparatus 9 can be provided. In addition, a cooling apparatus can also be provided on the stage 20 of the plasma processing apparatus 102 to cool the part supply body TW during plasma processing, thereby preventing over-heating of the part supply body TW.

[0210] (4) The support portion 2 is not limited to the illustrated embodiment as long as it can support the part supply body TW in the chamber 1. For example, the support portion 2 can be in the shape of a pin. In addition, the support portion 2 can also be the inner bottom portion of the chamber 1. In this case, a drive portion 21 used in the plasma processing apparatus 102 is provided in the hardening processing apparatus 101. The part supply body TW is carried into the chamber 1 by the robot 191a. The part supply body TW carried into the chamber 1 is handed over to the drive portion 21 and is then supported by the support portion 2.

[0211] (5) In the illustrated embodiment, the irradiation region of the irradiation apparatus 9 is configured to irradiate UV light to all of the exposed surfaces Te of the sheet T in the part supply body TW before plasma processing, but is not limited to the illustrated embodiment. For example, if the amount of volatile components generated from the part supply body TW can be reduced in advance to an amount that does not affect the bonding strength, then the electromagnetic wave can also be irradiated only to the exposed surface Te2 between the electronic parts E and the electronic parts E.

[0212] (6) The adhesive portion AD of the sheet T can also include a heat-hardening resin instead of a UV-hardening resin. That is, the adhesive portion AD of the sheet T includes a heat-hardening resin. In this case, heating for heat-hardening is preferably performed from above the part supply body TW using an infrared irradiation apparatus that uses infrared rays as electromagnetic waves as the irradiation apparatus 9. In addition, if the material of the electronic parts E is silicon, then the wavelength of the light irradiated from the irradiation apparatus 9 is preferably light of a wavelength that is not easily transmitted through silicon and is a wavelength that is not easily absorbed by silicon. As a result, the electronic parts E function as a mask, and the adhesive portion AD of the sheet T that is in contact with the electronic parts E does not undergo polymerization. As a result, the amount of volatile components that volatilize during surface processing using plasma can be reduced while maintaining the adhesion of the electronic parts E to the sheet T.

[0213] [Other Embodiments]

[0214] The above describes the embodiments of the present application and the modifications of the components, but the embodiments or the modifications of the components are presented as an example and are not intended to limit the scope of the application. The novel embodiments can be implemented in various other forms, and various omissions, substitutions, modifications, combinations can be made without departing from the scope of the application. The embodiments and the modifications thereof are included in the scope or the gist of the application, and are included in the application described in the claims.

Claims

1. A pre-treatment device for installation, characterized in that... have: A plasma processing apparatus that houses a component supply body that mounts a sheet having an adhesive surface on a ring and has small pieces of electronic components attached to the adhesive surface of the sheet on the inner side of the ring, and performs plasma processing before bonding the electronic components to a mounting substrate. as well as The hardening treatment apparatus irradiates electromagnetic waves from the side of the sheet to which the electronic components are attached before performing the plasma treatment using the plasma treatment apparatus, thereby hardening the exposed surface of the adhesive surface from which the electronic components are not attached.

2. The pre-installation treatment device according to claim 1, characterized in that, The hardening treatment apparatus includes an irradiation device, which is positioned opposite the side of the sheet of the part supply body where the electronic part is attached, and irradiates the electromagnetic wave toward the adhesive surface of the sheet where the electronic part is attached.

3. The pre-installation treatment device according to claim 1, characterized in that, The adhesive surface of the sheet comprises a UV-curable resin. The hardening treatment apparatus includes an irradiation device that uses ultraviolet light as the electromagnetic wave.

4. The pre-installation treatment device according to claim 1, characterized in that, The adhesive surface of the sheet comprises a thermosetting resin. The hardening treatment apparatus has an irradiation device that irradiates infrared rays as electromagnetic waves.

5. The pre-installation treatment device according to claim 1, characterized in that, The plasma processing device has a chamber capable of depressurizing its interior. The chamber has an inlet / outlet for moving the parts supply body in and out. The pre-installation processing apparatus includes a conveying device for moving the part supply body out of / into the cavity. The hardening treatment device is located near the loading / unloading inlet in such a way that it can irradiate the adhesive surface of the sheet in the part supply body being loaded into the chamber with the electromagnetic waves.

6. The pre-installation treatment device according to claim 1, characterized in that, The hardening treatment device irradiates the adhesive surface with electromagnetic waves that provide energy for hardening.

7. An installation system, characterized in that... have: The pre-installation treatment apparatus according to any one of claims 1 to 6; as well as A bonding device that detaches the electronic component, after being processed by the pre-mounting processing device, from the component supply body and mounts it onto the mounting substrate.

8. A pre-installation treatment method, comprising a pre-installation treatment method utilizing the pre-installation treatment apparatus as described in any one of claims 1 to 6, characterized in that... include: In the electromagnetic wave irradiation process, the hardening treatment device irradiates electromagnetic waves from the side of the sheet where the electronic components are attached, thereby hardening the exposed surface of the adhesive surface where the electronic components are not attached. The transfer process involves transferring the part supply body from the hardening treatment device to the plasma treatment device. as well as The plasma processing step involves performing plasma processing on the electronic components before bonding them to the mounting substrate.

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