Wet stripping process for rigid substrate metal film
By creating through holes and forming an uneven inner wall structure on the substrate, the problem of solution penetration difficulties in wet stripping is solved, enabling efficient metal layer transfer and substrate reuse.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-22
- Publication Date
- 2026-03-31
AI Technical Summary
Existing wet stripping techniques have difficulty penetrating effectively to the interface between metal and non-transparent substrates, making the stripping operation difficult.
Through holes are made on the substrate to form an uneven inner wall structure, allowing the solution to smoothly enter the interface between the metal and the substrate. Combined with a wet stripping process, the plated metal layer is stably transferred.
It improves wet stripping efficiency, ensures multiple uses of the substrate, and reduces costs.
Smart Images
Figure CN121759920A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of mechanical technology, and more specifically to a wet stripping process for metal thin films on rigid substrates. Background Technology
[0002] Using materials such as glass, ceramics, and silicon carbide wafers as substrates, after electroplating, evaporation, sputtering, or other processes are performed to deposit metal (such as copper) on one side of the substrate, the metal layer needs to be peeled off from the original substrate and transferred to another substrate.
[0003] Currently, laser lift-off is commonly used for transparent substrates. However, for non-transparent substrates, wet lift-off techniques are typically employed. Although wet lift-off is less expensive, the solution struggles to penetrate the metal-substrate interface during the process, leading to difficulties in the lift-off operation. Summary of the Invention
[0004] The purpose of this invention is to address the aforementioned problems in existing technologies by providing a wet stripping process for metal thin films on rigid substrates.
[0005] To achieve the above objectives, the present invention can be implemented through the following technical solutions: A wet stripping process for metal thin films on rigid substrates, characterized in that the process includes the following steps: A. Selecting a substrate: Select a substrate made of any one of the following materials: glass, ceramic, or silicon carbide wafers of the specified type; B. Opening: The area on the substrate where metal material is plated is called the processing area, and openings are made in the processing area; C. Transfer: After the metal material is plated on the substrate to be connected, the substrate with the metal material is transferred to another substrate. D. Wet stripping: In the wet stripping process, the treatment solution smoothly enters between the substrate and the plated metal layer through the opening. Under the action of the treatment solution, the plated metal layer smoothly detaches from the substrate and is stably transferred to another substrate.
[0006] In the aforementioned wet stripping process for rigid substrate metal films, the opening is a through hole that penetrates the substrate.
[0007] In the above-mentioned wet stripping process for rigid substrate metal thin films, the aperture size of the opening is 0.2-0.6 mm.
[0008] In the above-mentioned wet stripping process of metal thin film on rigid substrate, the number of openings is several, and the several openings are evenly distributed in the processing part of the substrate.
[0009] In the above-mentioned rigid substrate metal thin film wet peeling process, in step A, the substrate is placed in a mold and sintered.
[0010] In the above-mentioned rigid substrate metal thin film wet peeling process, the substrate after sintering in step A has several recessed positioning notches on both sides, and the positioning notches on both sides are set one-to-one.
[0011] In the above-mentioned wet stripping process of metal thin film on rigid substrate, in step B, the positioning notches on both sides are penetrated by a drill bit to form the above-mentioned opening.
[0012] In the above-mentioned wet stripping process of metal thin film on rigid substrate, the size of the positioning notch port is larger than the size of the opening, and there is a smooth transition between the positioning notch and the opening.
[0013] In the above-mentioned wet peeling process of metal thin film on rigid substrate, the inner diameter of the positioning notch port is 2 to 4 times the inner diameter of the opening.
[0014] In the aforementioned wet stripping process for rigid substrate metal thin films, the inner wall of the opening has an uneven adhesion structure.
[0015] Compared with existing technologies, in this rigid substrate metal thin film wet peeling process, after the metal layer plating process is completed, the substrate and the plated metal layer are transferred to another substrate simultaneously for wet peeling. During peeling, the solution can quickly enter the interface between the metal and the substrate through the holes on the substrate, improving the peeling efficiency. The peeled substrate can also be used multiple times. Attached Figure Description
[0016] Figure 1 This is a schematic diagram of the connection structure between the substrate and the coated metal layer.
[0017] In the picture: 1. Substrate; 11. Opening; 12. Positioning notch; 2. Metal plating layer. Detailed Implementation
[0018] The following are specific embodiments of the present invention, which, together with the accompanying drawings, will further describe the technical solution of the present invention.
[0019] like Figure 1 As shown, the wet stripping process for the metal thin film on this rigid substrate includes the following steps: Select a substrate: Select a substrate made of any one of the following materials: glass, ceramic, or silicon carbide wafers of the specified type; In step A, the substrate is placed in a mold and sintered.
[0020] The substrate sintered in step A has several recessed positioning notches on both sides, and the positioning notches on both sides are set one-to-one.
[0021] B. Opening: The area on the substrate where metal material is plated is called the processing area, and openings are made in the processing area; The opening is a through hole that penetrates the substrate.
[0022] The aperture size of the opening is 0.2-0.6 mm.
[0023] The number of openings is several, and the openings are evenly distributed in the processing section of the substrate.
[0024] In step B, the positioning notches on both sides are drilled through with a drill bit to form the aforementioned opening.
[0025] The size of the positioning notch is larger than the size of the opening, and there is a smooth transition between the positioning notch and the opening.
[0026] The inner diameter of the positioning notch port is 2 to 4 times the inner diameter of the opening.
[0027] The inner wall of the opening has an uneven attachment structure.
[0028] Since the openings formed after drilling the substrate are not polished, the roughness of the inner wall of the opening is relatively high. The aforementioned roughness of the inner wall of the opening forms the aforementioned adhesion structure. This structure allows the solution to be stored appropriately at the opening, so that there is always an appropriate amount of solution between the substrate and the coated metal layer during the wet stripping process.
[0029] C. Transfer: After the metal material is plated on the substrate to be connected, the substrate with the metal material is transferred to another substrate. D. Wet stripping: In the wet stripping process, the treatment solution smoothly enters between the substrate and the plated metal layer through the opening. Under the action of the treatment solution, the plated metal layer smoothly detaches from the substrate and is stably transferred to another substrate.
[0030] In this rigid substrate metal thin film wet peeling process, after the metal layer plating process is completed, the substrate and the plated metal layer are transferred to another substrate at the same time for wet peeling. During peeling, the solution will quickly enter the interface between the metal and the substrate through the holes on the substrate, which improves the peeling efficiency. The peeled substrate can also be used multiple times.
[0031] The above technical solutions of the present invention provide solutions that are significantly different from those of the prior art, addressing the problem that existing technical solutions are too simplistic. The parts not covered in the technical solutions of this application are the same as or can be implemented using existing technologies, and will not be described in detail here.
[0032] The technical solutions in the above embodiments have clearly and completely described the content of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
Claims
1. A rigid substrate metal thin film wet stripping process, characterized by, The process comprises the following steps: A. Selecting a substrate: selecting a substrate of any one of the following materials: glass, ceramic, silicon carbide wafer of a specified model; B. Drilling: the part of the substrate plated with metal material is the processing part, and drilling is performed at the processing part; C. Transferring: after the substrate is plated with metal material at the processing part, the substrate with metal material is transferred to another substrate; D. Wet stripping: the processing solution of the wet stripping process smoothly enters between the substrate and the plated metal layer through the drilled hole, and under the action of the processing solution, the plated metal layer smoothly separates from the substrate and is stably transferred to another substrate.
2. The rigid substrate metal thin film wet strip process of claim 1, wherein, The drilled hole is a through hole and penetrates the substrate.
3. The rigid substrate metal thin film wet strip process of claim 2, wherein, The drilled hole has a pore size of 0.2-0.6 mm.
4. The rigid substrate metal thin film wet strip process of claim 3, wherein, The number of drilled holes is several, and the several drilled holes are uniformly distributed at the processing part of the substrate.
5. The rigid substrate metal thin film wet strip process of claim 4, wherein, In step A, the substrate is placed in a mold and sintered to form.
6. The rigid substrate metal thin film wet strip process of claim 5, wherein, In step A, the sintered substrate has several recessed positioning notches on both sides, and the positioning notches on both sides are one-to-one correspondingly arranged.
7. The rigid substrate metal thin film wet strip process of claim 6, wherein, In step B, the positioning notches on both sides are penetrated by a drill bit to form the drilled hole.
8. The rigid substrate metal thin film wet strip process of claim 7, wherein, The size of the positioning notch port is larger than that of the drilled hole, and the positioning notch and the drilled hole are smoothly transitioned.
9. The rigid substrate metal thin film wet strip process of claim 8, wherein, The inner diameter size of the positioning notch port is 2-4 times the inner diameter size of the drilled hole.
10. The rigid substrate metal thin film wet strip process of claim 9, wherein, The inner wall of the drilled hole has a concave-convex attachment structure.