Wafer processing device

Abstract

The invention discloses a wafer processing device, and belongs to the technical field of semiconductor processing, the wafer processing device comprises a base and a bearing assembly, the base is provided with a containing groove, the containing groove is provided with a bottom wall and a side wall, the base has a first direction, and the side wall extends in the first direction from the plane where the bottom wall is located; the bearing assembly is arranged in the containing groove, and a gap is formed between the peripheral wall and the side wall of the bearing assembly; a backflow groove is formed in the side wall and / or the peripheral wall of the bearing assembly, the backflow groove is provided with a groove wall and a groove opening, the groove opening is located in the side wall and / or the peripheral wall of the bearing assembly and communicated with the gap, in the first direction, the maximum distance a mm is formed between the groove wall and the bottom wall, the maximum distance b mm is formed between the groove opening of the backflow groove and the bottom wall, and a is larger than b; the minimum distance between the groove wall and the bottom wall is equal to the minimum distance between the groove opening and the bottom wall. The structure of the reflux tank can reduce the airflow interference on the reaction gas around the substrate and ensure the reaction quality of the substrate.

Description

Technical Field

[0001] This application belongs to the field of film formation technology, specifically relating to a wafer processing apparatus. Background Technology

[0002] Currently, wafer processing equipment includes a base and a carrier assembly. To ensure uniform substrate reaction on the carrier assembly, the carrier assembly needs to be driven to rotate relative to the base. However, when using a floating gas to drive the carrier assembly to rotate, the floating gas will enter the reaction chamber formed by the carrier assembly and the cover plate assembly along the gap between the carrier assembly and the base. This can easily cause airflow disturbances of varying sizes around the substrate, affecting the reaction quality between the substrate surface and the reactant gas. Summary of the Invention

[0003] Purpose of the invention: This application provides a wafer processing apparatus designed to overcome the current technical problems.

[0004] Technical solution: A wafer processing apparatus according to an embodiment of this application includes:

[0005] A base having a receiving groove having a bottom wall and a side wall, the base having a first direction, and the side wall extending from the plane of the bottom wall along the first direction;

[0006] A support component is disposed within the receiving groove, and a gap is provided between the outer peripheral wall of the support component and the side wall;

[0007] The sidewall and / or the outer peripheral wall of the bearing assembly are provided with a return groove. The return groove has a groove wall and a groove opening. The groove opening is located on the outer peripheral wall and / or the sidewall of the bearing assembly and communicates with the gap. Along the first direction, the groove wall and the bottom wall have a maximum distance of a mm, and the groove opening of the return groove and the bottom wall have a maximum distance of b mm, satisfying: a > b.

[0008] The minimum distance between the groove wall and the bottom wall is equal to the minimum distance between the groove opening and the bottom wall.

[0009] In some embodiments, the slot has an upper edge and a lower edge, the upper edge and the lower edge being arranged along the first direction, the slot wall extending from the lower edge to the upper edge, the slot wall including a first guide section and a second guide section arranged front and back along the extension direction, the first guide section being connected to the lower edge, the second guide section being connected to the upper edge, and along the extension direction, the distance between the first guide section and the bottom wall gradually increases, and the distance between the second guide section and the bottom wall gradually decreases.

[0010] In some embodiments, the return channel is disposed around the outer peripheral wall and / or the side wall of the support assembly.

[0011] In some embodiments, the carrier component has a carrier surface, the wafer processing apparatus has a second direction, and process gas flows through the carrier surface along the second direction;

[0012] Along the second direction, the sidewall includes a first wall section located upstream of the support component and a second wall section located downstream of the support component, and the return channel is formed on the first wall section.

[0013] In some embodiments, the arc length of the first wall segment is c mm and the arc length of the second wall segment is d mm, satisfying: c ≥ d.

[0014] In some embodiments, along the first direction, the slot has a first dimension e mm, and the distance between the outer peripheral wall of the bearing component and the side wall is f mm, satisfying: e ≥ f.

[0015] In some embodiments, the bottom wall has a recessed groove that surrounds the periphery of the bottom wall and has an opening facing the outer edge of the support component and communicating with the gap.

[0016] In some embodiments, the base is further provided with a gas discharge channel, which is connected to the settling tank.

[0017] In some embodiments, the sidewall or the outer peripheral wall of the support component is provided with a plurality of the return grooves, and the plurality of groove openings are spaced apart along the first direction.

[0018] In some embodiments, both the sidewall and the outer peripheral wall of the supporting component are provided with reflux grooves, and the reflux grooves provided on the sidewall and the reflux grooves provided on the outer peripheral wall are arranged alternately in the first direction.

[0019] Beneficial effects: The wafer processing apparatus in this application embodiment includes a base and a carrier component. The base has a receiving groove, which has a bottom wall and a side wall. The base has a first direction, and the side wall extends from the plane of the bottom wall along the first direction. The carrier component is disposed in the receiving groove, and a gap is provided between the outer peripheral wall of the carrier component and the side wall. A return groove is provided on the side wall and / or the outer peripheral wall of the carrier component. The return groove has a groove wall and a groove opening. The groove opening is located on the outer peripheral wall of the side wall and / or the carrier component and communicates with the gap. Along the first direction, there is a maximum distance a mm between the groove wall and the bottom wall, and a maximum distance b mm between the groove opening of the return groove and the bottom wall, satisfying: a > b; the minimum distance between the groove wall and the bottom wall is equal to the minimum distance between the groove opening and the bottom wall. By creating reflux grooves on the sidewalls of the base and / or the outer peripheral walls of the support components, the air-floating gas between the bottom wall and the support components can be diverted when flowing through the groove opening and form a reflux under the guidance of the groove wall. This blocks the air-floating gas flowing in the first direction within the gap, thereby reducing the overflow of air-floating gas from the gap, mitigating the airflow interference to the reaction gas around the substrate, and ensuring the reaction quality of the substrate. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram showing the assembly position relationship between the base and multiple sets of support components in the wafer processing apparatus of this application, with one set of support components exploded out in the diagram;

[0022] Figure 2 This is a three-dimensional structural diagram of the wafer processing apparatus according to an embodiment of this application, showing the assembled base and multiple sets of support components.

[0023] Figure 3 This is a top view of the assembled base and multiple sets of support components in the wafer processing apparatus of this application embodiment;

[0024] Figure 4 This is a schematic front view of a set of carrier components in a wafer processing apparatus according to an embodiment of this application;

[0025] Figure 5 for Figure 3 Cross-sectional view along the AA direction;

[0026] Figure 6 For this application Figure 5 A magnified view of a portion of point B in the middle;

[0027] Figure 7 This is a cross-sectional schematic diagram of a wafer processing apparatus according to another embodiment of this application in the AA direction;

[0028] Figure 8 For this application Figure 7 A magnified view of a portion of point C in the middle;

[0029] Figure 9 This is a cross-sectional schematic diagram of a wafer processing apparatus according to another embodiment of this application in the AA direction;

[0030] Figure 10 For this application Figure 9 A magnified view of a portion of point D in the middle;

[0031] Reference numerals: 1. Base; 10. Receiving groove; 101. Bottom wall; 102. Side wall; 2. Bearing component; 21. Outer peripheral wall; 3. Gap; 4. Return groove; 40. Groove wall; 400. Groove opening; 4001. Upper edge; 4002. Lower edge; 401. First guide section; 402. Second guide section; 22. Bearing surface; X. First direction; 1021. First wall section; 1022. Second wall section; Y. Second direction; 1011. Settling tank; 1010. Opening; 5. Gas discharge channel. Detailed Implementation

[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0033] In the description of this application, it should be understood that the terms "upper," "lower," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," and "third," etc., are only for the convenience of description and are used to name parts or embodiments by number, and do not imply any order of importance between the parts or embodiments.

[0034] It should also be noted that in the accompanying drawings of this application, arrows marked with X indicate the first direction or its opposite, and arrows marked with Y indicate the second direction or its opposite. The introduction of the first and second directions in this application's description is to more clearly define the structure and relative positional relationships of the components in the wafer processing apparatus. In actual implementation, the first direction is generally a vertical direction or height direction, and the second direction is generally a horizontal or radial direction. The first and second directions intersect each other. Optionally, the first and second directions are perpendicular to each other to optimize the layout of the wafer processing apparatus. In the description of this application, "perpendicular" means completely perpendicular to 90° or almost completely perpendicular; for example, an angle between 80° and 100° is considered perpendicular. Similarly, "parallel" means completely parallel or almost completely parallel; for example, a completely parallel angle within 10° is considered parallel.

[0035] As a preamble to the embodiments of this application, the wafer processing apparatus includes a base and a carrier assembly. To ensure uniform substrate reaction on the carrier assembly, the carrier assembly needs to be driven to rotate relative to the base. Typically, the carrier assembly carries the substrate and is disposed within a receiving groove of the base. Suspension and rotation of the carrier assembly are achieved by injecting a floating gas between the carrier assembly and the bottom wall of the receiving groove and allowing the gas to flow in a predetermined direction. However, when using a floating gas to drive the rotation of the carrier assembly, the floating gas can enter the reaction chamber formed by the carrier assembly and the cover plate assembly along the gap between the carrier assembly and the base. This can easily cause airflow disturbances of varying magnitudes around the substrate, affecting the reaction quality between the substrate surface and the reactant gas.

[0036] In view of this, embodiments of this application provide a wafer processing apparatus aimed at solving at least one of the above-mentioned technical problems.

[0037] Please see Figures 1 to 3 As shown, the wafer processing apparatus in this embodiment includes a base 1 and a support component 2. The base 1 has a receiving groove 10, which has a bottom wall 101 and a side wall 102. The base 1 has a first direction X, and the side wall 102 extends from the plane of the bottom wall 101 along the first direction X. The support component 2 is disposed in the receiving groove 10, and a gap 3 is provided between the outer peripheral wall 21 of the support component 2 and the side wall 102. The side wall 102 and / or the outer peripheral wall 21 of the support component 2 are provided with a return groove 4, which has a groove wall 40 and a groove opening 400. The groove opening 400 is located on the side wall 102 and / or the outer peripheral wall 21 of the support component 2 and communicates with the gap 3. Along the first direction X, the groove wall 40 and the bottom wall 101 have a maximum distance a mm, and the groove opening 400 of the return groove 4 and the bottom wall 101 have a maximum distance b mm. mm, satisfying: a>b; the minimum distance between the groove wall 40 and the bottom wall 101 is equal to the minimum distance between the groove opening 400 and the bottom wall 101.

[0038] It should be understood that, in some embodiments, the base 1 in this application can be an integral structure (see reference). Figure 2 The base 1, together with the cover plate assembly, forms a reaction chamber to provide space for the reaction gas to react with the substrate surface; the upper surface of the base 1 has a receiving groove 10 for placing the support assembly 2 to support the substrate; in some embodiments, the base 1 can be a split structure, generally including a base and an inner plate and an outer plate (not shown) disposed on the base, the receiving groove 10 is formed by the base, the inner plate and the outer plate together, and the groove opening 400 faces the cover plate assembly; while in other embodiments, the base and the inner plate can be an integral structure (see reference). Figure 1 The outer panel is detachable (its structure is not shown in the figures). It should also be understood that in some embodiments, the carrier component 2 is an integral structure housed within the receiving groove 10, capable of carrying the substrate during transfer; while in other embodiments, the carrier component 2 may include a disk and a ring, with the ring fitted onto the side of the disk away from the bottom wall 101 of the receiving groove 10. Both components work together to support the substrate, with the substrate being transferred solely through the ring.

[0039] Please refer to the following in this application: Figure 3 , Figures 5 to 8 As shown, the maximum distance between the tank wall 40 and the bottom wall 101 is expressed as the distance between the furthest point on the tank wall 40 from the bottom wall 101 along the first direction X. Similarly, the maximum distance between the slot opening 400 and the bottom wall 101 is expressed as the distance between the furthest point on the slot opening 400 from the bottom wall 101 along the first direction X. When a is greater than b, it means that along the first direction X, at least part of the tank wall 40 is located on the side of the slot opening 400 away from the bottom wall 101, that is, the internal space of the return tank 4 extends obliquely upwards towards the slot opening 400. Furthermore, the minimum distances between the tank wall 40 and the slot opening 400 from the bottom wall 101 are equal, indicating that the internal space of the return tank 4 does not extend obliquely downwards towards the slot opening 400. By opening a return channel 4 on the side wall 102 of the base 1 and / or the outer peripheral wall 21 of the support component 2, when the air-floating gas in the gap 3 flows through the return channel 4, it can form a diversion. The diversion flows along the channel wall 40. Since the channel wall 40 essentially forms a return structure, it can guide the air-floating gas flowing into the return channel 4 to return, so that the air-floating gas returns into the gap 3 and flows in the opposite direction to the first direction X, thereby forming a flow obstruction effect in the gap 3 to reduce the air-floating gas overflowing from the gap 3 into the reaction chamber, avoid the reaction gas around the substrate being disturbed by the airflow, and ensure the reaction quality of the substrate.

[0040] It is important to understand that when the sidewall 102 and / or the outer peripheral wall 21 of the bearing component 2 are both provided with reflux grooves 4, a better flow obstruction effect can be formed within the gap 3. It is also important to understand that the reflux grooves 4 cannot completely guide the air-floating gas within the gap 3 back; a small amount of air-floating gas will still flow into the reaction chamber through the gap 3. This prevents the reaction gas within the reaction chamber from entering the gap 3, causing unnecessary corrosion and contamination inside the gap 3, and also prevents particulate matter accumulation that could affect the relative rotation between the bearing component 2 and the base 1.

[0041] In some embodiments, please refer to Figure 6 and Figure 8 As shown, the slot 400 has an upper edge 4001 and a lower edge 4002, which are arranged opposite each other along a first direction X. The slot wall 40 extends from the lower edge 4002 to the upper edge 4001. The slot wall 40 includes a first guide section 401 and a second guide section 402 arranged front and back along the extension direction. The first guide section 401 is connected to the lower edge 4002, and the second guide section 402 is connected to the upper edge 4001. Along the extension direction, the distance between the first guide section 401 and the bottom wall 101 gradually increases, and the distance between the second guide section 402 and the bottom wall 101 gradually decreases. It is understood that the upper edge 4001 is located on the side of the lower edge 4002 away from the bottom wall 101. The purpose of defining the positions of the upper edge 4001 and the lower edge 4002 in this application is to define the extension direction of the tank wall 40 and to further explain the structure of the return tank 4 in this application. It does not specifically refer to the upper edge 4001 located above and the lower edge 4002 located below. It can be further explained that on the extension path of the tank wall 40, the angle between the extension direction of the first guide section 401 and the first direction X is not greater than 90 degrees, and the angle between the extension direction of the second guide section 402 and the first direction X is greater than 90 degrees. When the air flotation gas passes through the opening 400 of the return tank 4, the air flotation gas is split into a main stream flowing along the first direction X and a branch stream entering the return tank 4 and being guided by the first guide section 401 and the second guide section 402. It should be understood that in this embodiment, the first guide section 401 extends in a direction away from the bottom wall 101 to guide the tributary gas to the bottom of the return tank 4; the second guide section 402 extends in a direction away from the bottom wall 101 to guide the tributary gas to the opening 400 and opposite to the main flow direction in the first direction X, thereby obstructing the main flow.

[0042] In some embodiments, the tank wall 40 further includes a third guide section (not shown in the figure), which connects the first guide section 401 and the second guide section 402 respectively, and the distance between the third guide section and the bottom wall 101 remains unchanged. It should be understood that the third guide section is transitionally connected between the first guide section 401 and the second guide section 402. The air flotation gas is guided from the first guide section 401 to the third guide section, and then from the third guide section to the second guide section 402, and finally flows back to the tank opening 400. On the one hand, the third guide section can guide the air flotation gas to flow in the opposite direction along the extension direction of the first guide section 401 to form a reflux; on the other hand, the third guide section can reduce the airflow resistance between the first guide section 401 and the second guide section 402, and avoid excessive airflow resistance near the intersection of the first guide section 401 and the second guide section 402, so as to reduce the flow rate of the branch gas entering the reflux tank 4 and reduce the flow velocity of the branch gas flowing out of the reflux tank 4, thus affecting the blocking effect on the mainstream gas.

[0043] In some embodiments, the reflux channel 4 is disposed around the outer peripheral wall 21 and / or side wall 102 of the support assembly 2. It should be understood that the reflux channel 4 has an annular structure (e.g., Figure 4 As shown, this can improve the stability of the bearing component 2, thereby preventing the bearing component 2 from contacting and rubbing against the side wall 102 of the receiving groove 10 during the rotation of the bearing component 2 relative to the base 1.

[0044] In some embodiments, the carrier component 2 has a carrier surface 22, the wafer processing apparatus has a second direction Y, and the process gas flows through the carrier surface 22 along the second direction Y; along the second direction Y, the sidewall 102 includes a first wall section 1021 located upstream of the carrier component 2 and a second wall section 1022 located downstream of the carrier component 2, and a return channel 4 is formed on the first wall section 1021. It should be understood that, in this embodiment, the process gas flows from the middle of the base 1 radially towards the edge of the base 1 (e.g., ...). Figure 3As shown in the figure, the second direction Y can be the radial direction of the base 1. When multiple receiving slots 10 are provided and distributed circumferentially along the base 1, the number of carrier components 2 corresponds to the number of receiving slots 10. Correspondingly, in this embodiment, the return channel 4 is an arc-shaped structure. By opening the return channel 4 on the first wall section 1021 upstream of the carrier component 2, the flow rate of the floating gas overflowing from the gap 3 upstream of the carrier component 2 is reduced, thereby reducing the airflow interference caused by the floating gas to the reaction gas, ensuring the purity of the reaction gas flowing through the substrate, and ensuring the substrate reaction quality. In other embodiments, such as when the process gas flows horizontally from one end of the reaction chamber to the other end, especially when the base is provided with only one receiving slot (not shown), the rotation of the carrier component in the receiving channel can replace the rotation of the base to achieve the purpose of uniform wafer growth. In this case, the above-mentioned return channel can also be provided only on the side wall of the receiving channel upstream of the carrier component to reduce the flow rate of the floating gas overflowing from the gap upstream of the carrier component, thereby ensuring the quality of the substrate processing.

[0045] In some embodiments, please refer to Figure 3 As shown, the arc length of the first wall segment 1021 is c mm, and the arc length of the second wall segment 1022 is d mm, satisfying c ≥ d. It is important to understand that the arc length of the first wall segment 1021 is greater than the arc length of the second wall segment 1022. This is to ensure that the projection of the first wall segment 1021 onto the plane perpendicular to the second direction Y completely covers the projection of the second wall segment 1022 onto the same plane. This ensures that the flow rate of the floating gas overflowing from the gap 3 upstream of the support component 2 will not interfere with the airflow of the reaction gas flowing across the substrate surface, thus ensuring the substrate reaction quality.

[0046] In some embodiments, please refer to Figure 5 and Figure 6 As shown, along the first direction X, the slot 400 has a first dimension e mm, and the distance between the outer peripheral wall 21 and the side wall 102 of the bearing component 2 is f mm, satisfying: e ≥ f. It should be understood that the first dimension of the slot 400 can be expressed as the distance between the upper edge 4001 and the lower edge 4002 of the slot 400 along the first direction X. When e is greater than f, the air-floating gas in the gap 3 formed by the side wall 102 and the outer peripheral wall 21 of the bearing component 2 can be more diverted into the return channel 4 when passing through the slot 400 of the return channel 4, forming a return flow within the return channel 4. This ensures that the tributary guided by the return channel 4 can form a sufficiently large airflow barrier, thereby hindering the main flow along the first direction X. It should be understood that the larger the dimension of the slot 400 along the first direction X, the better the flow-blocking effect on the air-floating gas flowing along the first direction X within the gap 3.

[0047] In some embodiments, please refer to Figures 5 to 10 As shown, a recess 1011 is formed in the bottom wall 101. The recess 1011 is arranged around the periphery of the bottom wall 101, and the opening 1010 of the recess 1011 faces the outer edge of the supporting component 2 and communicates with the gap 3. It should be understood that the recess 1011 is formed on the bottom wall 101 and communicates with the gap 3. The projection of the gap 3 along the first direction X on the bottom wall 101 is located in the recess 1011. Its purpose is to contain and buffer the air flotation gas, so as to avoid interfering with the flow direction of the air flotation gas between the bottom wall 101 and the supporting component 2, and ensure that the air flotation gas can normally drive the supporting component 2 to rotate relative to the base 1.

[0048] In some embodiments, please refer to Figures 1 to 2 As shown, the base 1 is also equipped with a gas discharge channel 5, which is connected to the settling tank 1011. It should be understood that the settling tank 1011 not only serves to contain and buffer the air-floating gas, but also guides the air-floating gas into the gas discharge channel 5, thereby smoothly discharging the air-floating gas, ensuring the flow of air-floating gas between the bottom wall 101 and the supporting component 2, and driving the supporting component 2 to rotate relative to the base 1.

[0049] In some embodiments, the sidewall 102 or the outer peripheral wall 21 of the support component 2 is provided with a plurality of reflux grooves 4 (not shown in the figure), and the plurality of groove openings 400 are spaced apart along the first direction X. It should be understood that the reflux grooves 4 can be provided on either the sidewall 102 or the outer peripheral wall 21 of the support component 2, and the number of reflux grooves 4 is multiple, so as to form a more stable blocking effect on the air-floating gas in the gap 3, and at the same time, further reduce the overflow of air-floating gas from the gap 3 into the reaction chamber, avoid the reaction gas around the substrate from being disturbed by the airflow, and ensure the reaction quality of the substrate.

[0050] In some embodiments, please refer to Figure 9 and Figure 10 As shown, both the sidewall 102 and the outer peripheral wall 21 of the supporting component 2 are provided with return channels 4. The return channels 4 on the sidewall 102 and the return channels 4 on the outer peripheral wall 21 are staggered in the first direction X. It should be understood that the return channels 4 on both the sidewall 102 and the outer peripheral wall 21 of the supporting component 2, and their staggered arrangement in the first direction X, can improve the utilization rate of the internal space of the gap 3 and increase the number of return channels 4 to achieve a better obstruction effect on the air-floating gas in the gap 3. On the other hand, the staggered arrangement of the return channels 4 on the sidewall 102 and the outer peripheral wall 21 in the first direction X can reduce the mutual interference between the return channels 4 on the sidewall 102 and the outer peripheral wall 21, and avoid turbulence of the airflow inside the gap 3, which could lead to a deterioration or failure of the obstruction effect of the return channels 4.

[0051] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0052] The wafer processing apparatus provided in the embodiments of this application has been described in detail above, and specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A wafer processing apparatus, characterized by comprising: The application relates to a wafer processing device, comprising: a base (1) having a receiving groove (10) with a bottom wall (101) and a side wall (102), the base (1) having a first direction (X), the side wall extending from the plane of the bottom wall along the first direction (X); a carrier assembly (2) arranged in the receiving groove (10), a gap (3) being provided between the outer peripheral wall (21) of the carrier assembly (2) and the side wall (102); the side wall (102) and / or the outer peripheral wall (21) of the carrier assembly (2) is provided with a backflow groove (4) having a groove wall (40) and a groove opening (400), the groove opening (400) being located on the outer peripheral wall (21) of the carrier assembly (2) and / or the side wall (102) and communicating with the gap (3), the maximum distance a mm between the groove wall (40) and the bottom wall (101) and the maximum distance b mm between the groove opening (400) of the backflow groove (4) and the bottom wall (101) along the first direction (X) satisfying a > b; the minimum distance between the groove wall (40) and the bottom wall (101) is equal to the minimum distance between the groove opening (400) and the bottom wall (101).

2. The wafer processing apparatus of claim 1, wherein the groove opening (400) has an upper edge (4001) and a lower edge (4002), the upper edge (4001) and the lower edge (4002) being arranged along the first direction (X), the groove wall (40) extending from the lower edge (4002) to the upper edge (4001), the groove wall (40) comprising a first flow guide section (401) and a second flow guide section (402) arranged in front of and behind the extending direction, the first flow guide section (401) being connected with the lower edge (4002), the second flow guide section (402) being connected with the upper edge (4001), and along the extending direction, the distance between the first flow guide section (401) and the bottom wall (101) gradually increases, and the distance between the second flow guide section (402) and the bottom wall (101) gradually decreases.

3. The wafer processing apparatus of claim 1, wherein the backflow groove (4) is arranged around the outer peripheral wall (21) of the carrier assembly (2) and / or the side wall (102).

4. The wafer processing apparatus of claim 1, wherein the carrier assembly (2) has a carrier surface (22), the wafer processing device has a second direction (Y), and a process gas flows through the carrier surface (22) along the second direction (Y); along the second direction (Y), the side wall (102) comprises a first wall section (1021) located upstream of the carrier assembly (2) and a second wall section (1022) located downstream of the carrier assembly (2), and the backflow groove (4) is arranged on the first wall section (1021).

5. The wafer processing apparatus of claim 4, wherein the arc length of the first wall section (1021) is c mm, the arc length of the second wall section (1022) is d mm, and c >= d.

6. The wafer processing apparatus of claim 1, wherein In the first direction (X), the notch (400) has a first size e mm, and a spacing size f mm between the outer peripheral wall (21) of the carrier assembly (2) and the side wall (102), satisfying: e ≥ f.

7. The wafer processing apparatus of claim 1, wherein The bottom wall (101) is provided with a sink (1011), which is arranged around the periphery of the bottom wall (101), and the opening of the sink (1011) faces the outer edge of the carrier assembly (2) and communicates with the gap (3).

8. The wafer processing apparatus of claim 7, wherein, The base (1) is further provided with a gas discharge channel (5) inside, which communicates with the sink (1011).

9. The wafer processing apparatus of claim 1, wherein, The side wall (102) or the outer peripheral wall (21) of the carrier assembly (2) is provided with a plurality of backflow grooves (4), and a plurality of notches (400) are arranged at intervals in the first direction (X).

10. The wafer processing apparatus of claim 1, wherein, The side wall (102) and the outer peripheral wall (21) of the carrier assembly (2) are both provided with backflow grooves (4), and the backflow grooves (4) arranged on the side wall (102) and the backflow grooves (4) arranged on the outer peripheral wall (21) are staggered in the first direction (X).

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