Semiconductor processing systems and related methods

Abstract

A semiconductor processing system for depositing an epitaxial layer on a substrate by plasma enhanced chemical vapor deposition is disclosed. A semiconductor processing system includes a chamber body, a substrate support disposed within an interior of the chamber, and a plasma generating device configured to generate a reactive species within the interior of the chamber. A method of depositing an epitaxial layer on a substrate by a plasma enhanced chemical vapor deposition process is also disclosed.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor processing systems and related methods, and to the field of device and integrated circuit manufacturing. More specifically, this disclosure generally relates to semiconductor processing systems configured for performing plasma-enhanced chemical vapor deposition processes and related methods for depositing one or more epitaxial layers. Background Technology

[0002] In plasma-enhanced chemical vapor deposition (PECVD), an epitaxial layer is deposited on a substrate, such as a silicon wafer. After stimulated reactive materials are generated by a plasma generation device / system, a chemical reaction can occur in a reaction chamber, where one or more reactants can react and / or decompose on the substrate surface to produce the epitaxial layer.

[0003] To facilitate chemical reactions, conventional systems may attempt to increase the temperature at which deposition occurs. However, such approaches can require high energy consumption and / or exceed the thermal budget of certain materials on the substrate, leading to undesirable effects such as instability and chambering. Therefore, conventional systems may lack a mechanism to balance growth rate and thermal budget, limiting their ability to control precursor deposition and deliver optimal performance, yield, and energy consumption during semiconductor manufacturing.

[0004] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure merely for the purpose of providing background to this disclosure and should not be construed as an admission that any or all of the discussions were known at the time the invention was made or otherwise constituted prior art. Summary of the Invention

[0005] The present invention provides a simplified description of the selected concepts, which will be described in further detail below. This invention is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0006] Various embodiments provided include a semiconductor processing system configured to perform a plasma-enhanced epitaxial deposition process, the semiconductor processing system comprising: a chamber body having an upper wall, a lower wall, a first sidewall, and a second sidewall opposite to the first sidewall, wherein the upper wall extends longitudinally between an injection end and a longitudinally opposite discharge end, and the lower wall is below the upper wall and parallel to the upper wall; a substrate support configured to support a substrate and disposed within the chamber interior between the injection end and the discharge end; an injection flange including a plurality of injection ports coupled to the injection end and configured to introduce gaseous process gas into the chamber interior; and a plasma generation device configured to generate reactive material from the gaseous process gas within the chamber interior at a plasma generation region disposed between the injection flange and the substrate support.

[0007] In some embodiments, the plasma generating apparatus includes one or more internal components disposed within the interior.

[0008] In some embodiments, the plasma generating apparatus includes an internal filament longitudinally positioned between an injection flange and a substrate support.

[0009] In some embodiments, the internal filament is positioned close to multiple injection ports such that the internal filament intersects with the flow path of the gaseous process gas entering the chamber.

[0010] In some embodiments, the internal filaments extend vertically between the first sidewall and the second sidewall opposite to the first sidewall.

[0011] In some embodiments, the internal filament is electrically connected to the external plasma power / control system via a first contact and a second contact, both of which extend from the interior to the exterior through a first sidewall.

[0012] In some embodiments, the internal filaments are supported at the first sidewall by a cantilever configuration.

[0013] In some embodiments, the internal filament is electrically connected to the plasma power / control system via a first contact extending through a first sidewall and a second contact extending through a second sidewall opposite to the first sidewall.

[0014] In some embodiments, the internal filament is one of a plurality of internal filaments, and each of the plurality of internal filaments is positioned near one of the plurality of injection ports such that each of the plurality of internal filaments intersects with a separate flow path of the gaseous process gas introduced by one of the plurality of injection ports.

[0015] In some embodiments, each of the plurality of internal filaments is electrically connected to the plasma power / control system via a first contact and a second contact.

[0016] In some embodiments, the plasma generating apparatus includes one or more external elements positioned around the exterior of the room.

[0017] In some embodiments, the plasma generating device includes a pair of external electrodes positioned around the outside of the chamber.

[0018] In some embodiments, the pair of external electrodes includes an upper electrode located above the upper wall of the chamber body and a lower electrode located below the lower wall of the chamber body.

[0019] In some embodiments, the pair of external electrodes includes a first transverse electrode positioned near the outer surface of the first sidewall and a second transverse electrode positioned near the outer surface of the second sidewall opposite to the first sidewall.

[0020] In some embodiments, the plasma generating apparatus includes one or more external coils that extend around the outside of the chamber between the injection flange and the substrate support.

[0021] In some embodiments, the plasma generating apparatus includes a first external coil extending laterally around the outside of the chamber and longitudinally adjacent to the injection flange, and a second external coil extending laterally around the outside of the chamber and longitudinally adjacent to the substrate support.

[0022] In some embodiments, the injection flange further includes a plurality of flow controllers configured to control the flow of gaseous process gas from the gas source assembly to a plurality of injection ports and through them to the interior of the chamber.

[0023] In some embodiments, the gas source assembly includes a silicon precursor source in fluid communication with the injection flange, and wherein the reactive material includes one or more of silicon radicals, silicon metastables, and silicon ions.

[0024] In some embodiments, the chamber body has a plurality of external ribs that extend laterally around the outside of the chamber and are longitudinally spaced apart from each other between the injection end and the longitudinally opposite discharge end of the chamber body.

[0025] In some embodiments, the semiconductor processing system further includes a heater element array surrounding an external chamber support and optically coupled to a substrate support, the heater element array including: a plurality of lower linear luminaires supported below the chamber body and optically coupled to the substrate support via a quartz material forming the chamber body; and a plurality of upper linear luminaires supported above the chamber body and optically coupled to the substrate support via a quartz material forming the chamber body.

[0026] In some embodiments, the semiconductor processing system further includes a controller comprising a processor and a memory having instructions recorded thereon that, when read by the processor, cause the processor to: place a substrate on a substrate support; provide a controlled flow of a gaseous process gas to an injection flange and through it to an interior chamber; and activate a plasma generation device to generate a reactive substance from the gaseous process gas at a plasma generation region, thereby depositing one or more epitaxial layers onto the substrate.

[0027] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0028] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0029] To facilitate the identification of any particular element or action in the discussion, one or more of the most significant digits in the reference numerals refer to the figure number in which the element was first introduced.

[0030] A more complete understanding of embodiments of this disclosure can be derived by referring to the detailed description and claims when considered in conjunction with the following illustrative drawings.

[0031] Figure 1 A cross-sectional view of a semiconductor processing system including a chamber device according to one or more embodiments is shown.

[0032] Figure 2 A schematic plan view of a chamber apparatus including a plasma generating device is shown according to one or more embodiments.

[0033] Figure 3 A cross-sectional view of a chamber apparatus including a plasma generating device according to one or more embodiments is shown.

[0034] Figure 4 A plan view of a chamber device including internal filaments according to one or more embodiments is shown.

[0035] Figure 5 A cross-sectional view of a chamber device including internal filaments according to one or more embodiments is shown.

[0036] Figure 6 A cross-sectional view of a chamber device including an internal filament and a filament support member according to one or more embodiments is shown.

[0037] Figure 7 A further cross-sectional view of a chamber device including an internal filament according to one or more embodiments is shown.

[0038] Figure 8 A cross-sectional view of a chamber device comprising a plurality of internal filaments according to one or more embodiments is shown.

[0039] Figure 9 A plan view of a chamber device comprising a plurality of internal filaments according to one or more embodiments is shown.

[0040] Figure 10 A cross-sectional view of a chamber device including a pair of external electrodes according to one or more embodiments is shown.

[0041] Figure 11 A schematic plan view of a chamber device including a pair of external electrodes according to one or more embodiments is shown.

[0042] Figure 12 A cross-sectional view of a chamber device including a first external coil and a second external coil according to one or more embodiments is shown.

[0043] Figure 13 A method for depositing an epitaxial layer on a substrate using a reactive material generated inside the chamber, according to one or more embodiments, is illustrated.

[0044] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0045] The following description of exemplary embodiments of the methods and compositions is merely illustrative and intended for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0046] The various embodiments provided relate to semiconductor processing systems, such as plasma-enhanced chemical vapor deposition (PECVD) systems configured for depositing epitaxial layers on substrates, and methods for depositing epitaxial layers using semiconductor processing systems. Semiconductor processing systems can be used to process substrates, such as semiconductor wafers. For example, the systems described herein can be used to form or grow epitaxial layers (e.g., semiconductor layers) on the surface of a substrate.

[0047] Chemical vapor deposition (CVD) systems configured for epitaxial deposition of semiconductor materials, such as epitaxial silicon layers, typically deposit such layers by loading a substrate into a reaction chamber, heating the substrate to a desired deposition temperature, and exposing the substrate to a silicon precursor under environmental conditions selected to allow the epitaxial silicon layer to be deposited on the substrate. Heating the substrate causes the silicon precursor to typically decompose into epitaxial layer components at a rate corresponding to the substrate temperature (i.e., the deposition temperature). While generally acceptable for its intended purpose, heating the substrate to high deposition temperatures (e.g., above 600°C, or, for some precursors, above 1000°C) consumes significant amounts of power and consumables and can potentially damage the substrate and / or components of the semiconductor processing system used in the deposition.

[0048] In silicon epitaxy, the deposition temperature can be lowered by introducing silicon reactive material generated by a remote plasma source located outside the reaction chamber. However, remotely generated reactive material tends to recombine before contacting the substrate, thus limiting the effectiveness of common remote plasma generation techniques used in epitaxial deposition processes.

[0049] Various embodiments provide semiconductor processing systems configured for epitaxially depositing semiconductor layers at reduced deposition temperatures. Various embodiments employ plasma generation devices configured to generate reactive materials (e.g., ions, radicals, metastable substances, etc.) within the PECVD reaction chamber. Generating reactive materials within the reaction chamber, particularly near the substrate on which deposition occurs, reduces the recombination of radical materials, thereby improving the efficiency of the deposition system.

[0050] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form or on which devices, circuits, or films can be formed by means of methods according to embodiments of the invention. A substrate may comprise a bulk material, such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or other semiconductor materials (e.g., group II-VI or III-V semiconductor materials), and may comprise one or more layers overlying or underlying the bulk material. Furthermore, a substrate may include various features, such as recesses, protrusions, etc., formed within or on at least a portion of the layers of the substrate. For example, a substrate may comprise a bulk semiconductor material and an insulating or dielectric material layer covering at least a portion of the bulk semiconductor material. Furthermore, the term "substrate" can refer to any one or more underlying materials that can be used or on which devices, circuits, or films can be formed. A "substrate" can be continuous or discontinuous; rigid or flexible; solid or porous. A "substrate" can be any form, such as powder, plate, workpiece, etc. Plate-shaped substrates can include wafers of various shapes and sizes. Substrates can be made of materials such as silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. A continuous substrate may extend beyond the boundary of the processing chamber, where a deposition process occurs, and the continuous substrate may move through the processing chamber such that the process continues until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate feed system, allowing the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets, nonwoven films, rolls, foils, meshes, flexible materials, bundles of continuous filaments or fibers (i.e., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or sheet on which a non-continuous substrate is mounted. For example, the substrate may contain a semiconductor material. The semiconductor material may include or be used to form one or more of the source, drain, or channel regions of a device. The substrate may further contain an interlayer dielectric (e.g., silicon oxide) and / or a high-k dielectric material layer overlaid with the semiconductor material. In this case, the high-k dielectric material (or high-k dielectric material) is a material with a dielectric constant greater than that of silicon dioxide.

[0051] The term "one or more precursor gases" can refer to a gas or combination of gases that participate in a chemical reaction to produce another compound. For example, precursor gases can be used to grow epitaxial layers including silicon and germanium. Precursor gases may include one or more deposition gases, one or more dopant gases, or a combination of one or more deposition gases and one or more dopant gases. Precursor gases may include silicon precursors, such as higher-order silicon precursors. Silicon precursors may also include silanes (SiH4) or chlorosilanes (SiCl4). In some examples, higher-order silicon precursors may have one silicon atom per molecule, such as silanes. Higher-order silicon precursors may have two or more silicon atoms per molecule, such as dichlorosilanes. In some embodiments, higher-order silicon precursors may have three or more silicon atoms. Higher-order silicon precursors may include non-halogenated higher-order silicon precursors, such as propsilanes and butyrales. Higher-order silicon precursors may include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorodichlorosilanes, dichlorosilanes, trichlorosilanes, and tetrachlorosilanes. The precursor gas may include higher-order germanium-containing material layer precursors, such as germanane, digermanane, trigermanane, their chloride derivatives, and mixtures thereof. The precursor gas may contain p-doped higher-order precursors, such as diborane (B₂H₆). The precursor gas may also include n-doped higher-order precursors, such as phosphine (PH₃) and arsine (AsH₃).

[0052] As used herein, the term “epitaxy layer” can refer to a single-crystal layer (or a substantial single-crystal layer) directly on the underlying single-crystal (or substantially single-crystal) substrate or layer.

[0053] As used herein, the terms “chemical vapor deposition” or “CVD” can refer to any process in which a substrate is exposed to one or more volatile precursors (and optionally additional process gases) that react and / or decompose on the substrate surface to produce the desired deposition.

[0054] In the following description of various embodiments, reference is made to the accompanying drawings, which form part of this document and illustrate various embodiments in which aspects of this disclosure can be practiced. It should be understood that other embodiments may be utilized, and structural and functional modifications may be made without departing from the scope of this disclosure. Aspects of this disclosure are capable of having other embodiments and can be practiced or performed in various ways. Furthermore, it should be understood that the wording and terminology used herein are for descriptive purposes and should not be considered limiting. Rather, the phrases and terms used herein are to be given their broadest interpretation and meaning. The use of “comprising” and “including” and variations thereof is intended to cover items listed thereafter and their equivalents, as well as additional items and their equivalents. While various directional arrows are shown in the accompanying drawings of this disclosure, the directional arrows are not intended to limit the extent to which bidirectional communication is excluded. Rather, the directional arrows are used to illustrate a general flow of steps, rather than a unidirectional movement of information. Throughout this specification, when an element is referred to as “comprising” or “including” another element, that element should not be construed as excluding other elements, and that element may include at least one other element, unless otherwise specified in the description. Throughout the specification, expressions such as "at least one of a, b, and c" may include "only a", "only b", "only c", "a and b", "a and c", "b and c", and / or "all of a, b, and c".

[0055] Based on the examples in this disclosure, Figure 1 A cross-sectional view of a semiconductor processing system 100 including chamber device 102 is shown. Figure 2 A plan view of the chamber device 102 is shown, and Figure 3 It shows the way Figure 1 A cross-sectional view of a portion of the chamber device 102 in plane AA shown.

[0056] In various embodiments, the semiconductor processing system 100 includes a chamber device 102. Gas-phase process gases are supplied to the chamber device 102 from a gas source assembly 104 in conjunction with an optional gas distribution assembly 106. The semiconductor processing system 100 also includes an exhaust assembly 108, a controller 110, and a plasma power / control system 112. Although in Figure 1 The system is shown as a separate controller 110 and plasma power / control system 112, but these two systems can be combined into a single control system configured to provide operation and function for both controller 110 and plasma power / control system 112. Furthermore, the semiconductor processing system 100 includes plasma generation devices (114, 116) configured to generate reactive substances (e.g., from plasma) inside the chamber, as described in detail below.

[0057] Gas source assembly 104 is configured and arranged to supply gaseous process gas to chamber device 102. The gaseous process gas may include a single gas or a mixture of gases, including but not limited to precursor gases, dopant gases, etchant gases, and inert gases (e.g., purge gases, carrier gases). Gas source assembly 104 may include various systems, subsystems, and components (not shown) for generating and controlling the flow of gaseous process gas from a source included therein to a process gas supply line 118, which fluidly connects gas source assembly 104 to chamber device 102 via gas distribution assembly 106. Gas source assembly 104 includes a precursor source 120, which may include multiple precursor sources. In some embodiments, precursor source 120 includes a silicon source, which includes one or more silicon precursors. The gaseous process gas supplied by gas source assembly 104 is introduced into chamber interior 122 through injection flange 126 including multiple injection ports 128 (e.g., indicated by process gas flow 124), as described in detail below.

[0058] In various embodiments, the precursor source 120 subsystem of the gas source assembly 104 includes a silicon source (not shown). The silicon source may include a subsystem that provides a silicon precursor flow to the chamber device 102 via an injection flange 126 and through it to a plurality of injection ports 128 and into the chamber interior 122, such as... Figure 1 The process gas flow is shown in Figure 124.

[0059] In some embodiments, the silicon source includes a silicon precursor having one silicon atom per molecule, such as silane (SiH4) or monochlorosilane (ClH3Si). Alternatively (or in addition), the silicon precursor may include higher-order silicon precursors, such as silicon precursors having two or more silicon atoms per molecule, or in some examples, silicon precursors having three or more silicon atoms. Higher-order silicon precursors may include non-halogenated higher-order silicon precursors, such as propsilane and butsilane. Higher-order silicon precursors may include halogenated higher-order silicon precursors, such as higher-order chlorine-containing precursors, such as chlorochlorosilane, dichlorosilane, trichlorosilane, and tetrachlorosilane.

[0060] In some embodiments, the silicon source includes silanes and / or halosilanes. In some embodiments, the silicon precursor may include a hydrogenated silicon precursor. In such embodiments, the hydrogenated silicon precursor may be selected from silane (SiH4), silane (Si2H6), propane (Si3H8), and tetrasilane (Si4H). 10In another embodiment, the silicon precursor may include a silicon halide precursor. In such an example, the silicon halide precursor may include a silicon chloride precursor selected from: monochlorosilane (MCS), dichlorosilane (DCS), trichlorosilane (TCS), hexachlorodisilane (HCDS), octachlorotrisilane (OCTS), and silicon tetrachloride (STC). In another embodiment, the silicon precursor may include a silicon iodide precursor. In such an example, the silicon halide precursor may include a silicon iodide precursor selected from: monoiodosilane, diiodosilane, triiodosilane, and tetraiodosilane.

[0061] The precursor source 120 subsystem of the gas source assembly 104 may include a germanium source (not shown). The germanium source may provide a germanium precursor flow to the chamber device 102 via an injection flange 126 including multiple injection ports 128.

[0062] The germanium source may include germane precursors, such as germananes and / or germanium halides. For example, germane precursors may include germananes, such as germanane (GeH4), digermanane (Ge2H6), trigermanane (Ge3H8), or germanium-based silane (GeH6Si). In other examples, germanium precursors may include germanium halides, such as GeCl4, GeCl2, and GeCl2H2.

[0063] In addition to precursor source 120, gas source assembly 104 may also include dopant source 130, etchant source 132, and support source 134. Dopant source 130 may include dopant compounds such as phosphorus (P), boron (B), and / or arsenic (As). In some examples, dopant source may include p-dopers, such as borane, diborane (B2H6), deuterium-diborane (B2D6), and boron halides (such as BBr3, BH2Cl, and BCl2H). In other examples, dopant source 130 may include n-dopers, such as phosphine (PH3) and arsine (AsH3). Etching source 132 may include halide-containing compounds. The halide-containing compounds may flow independently of the precursor, for example, to provide purging and / or remove condensate from within chamber device 102. The halide-containing compounds may co-flow with one or more other process gases. Examples of suitable halides include chlorine (Cl), such as chlorine gas (Cl2) and hydrochloric acid (HCl), and fluorine (F), such as fluorine gas (F2) and hydrofluoric acid (HF). The carrier source 134 may be configured to supply an inert carrier gas and / or purge gas to the chamber device 102. Examples of suitable purge gases / carrier gases may include hydrogen (H2), nitrogen (N2), inert gases (such as argon (Ar) or helium (He)), and mixtures thereof.

[0064] According to an example of this disclosure, a semiconductor processing system 100 includes a chamber device 102. The chamber device 102 may include a cross-flow cold-wall epitaxial reaction chamber. The chamber device 102 may include a chamber body 136 and a substrate support 138. The chamber device 102 may include an upper heater element array 140 and a lower heater element array 142, such as... Figure 1 As shown. Although a particular arrangement is shown and described herein, it should be understood and recognized that the chamber arrangement 102 may include other elements and / or omit elements shown and described herein, and is still within the scope of this disclosure.

[0065] Based on the examples in this disclosure and referenced Figure 1 , Figure 2 and Figure 3 The chamber device 102 includes a chamber body 136. The chamber body 136 includes an upper wall 148, a lower wall 150, and a first side wall 202. Figure 2 The chamber body 136 comprises an upper wall 148 and a lower wall 150, which are opposite to the first sidewall 202 and the longitudinally opposite discharge end 154. The upper wall 148 and the lower wall 150 extend longitudinally between the injection end 152 and the longitudinally opposite discharge end 154, at least partially defining the chamber interior 122 and the chamber exterior 160. As used herein, the longitudinal orientation of the chamber body 136 (and the relative orientation and position of the elements of the chamber assembly 102) may be indicated by the longitudinal axis 156. The lower wall 150 is below and parallel to the upper wall 148. In some examples, the chamber body 136 may be formed of a ceramic material such as sapphire or quartz. The chamber body 136 may include a plurality of external ribs 158. The plurality of external ribs 158 may extend laterally around the chamber exterior 160 and are longitudinally spaced between the injection end 152 and the discharge end 154 of the chamber body 136. It is also contemplated, according to some examples, that the chamber body 136 may not include ribs.

[0066] According to the example of this disclosure, chamber device 102 ( Figure 1 The device includes an injection flange 126 coupled to an injection end 152 of the chamber body 136. The injection flange 126 includes a front surface 162 coupled to the injection end 152 of the chamber body 136. The injection flange 126 may include a substrate channel 164 through which a substrate (e.g., substrate 146) can be loaded into and unloaded from the chamber interior 122. The injection flange 126 includes a plurality of injection ports 128 (e.g., ...). Figure 1 Example injection port 128 and Figure 2 and Figure 3 (A series of injection ports 128 are shown). In some examples, multiple injection ports 128 are disposed in the front side 162 of the injection flange 126. In other examples, multiple injection ports 128 are located close to the front side 162 of the injection flange 126, for example, multiple injection ports 128 may be disposed in the upper surface of the substrate channel 164.

[0067] In various embodiments, the injection flange 126 includes a gas distribution assembly 106, which includes a plurality of flow controllers 304 (e.g., Figure 3 As shown, the flow controller 304 can be configured to control the flow of gaseous process gas from the gas source assembly 104 to a plurality of injection ports 128 and through them to the interior 122.

[0068] According to the examples of this disclosure, gas distribution assembly 106 (such as...) Figure 3 (As shown) includes one or more (e.g., multiple) gas lines 306 that can be connected to the gas source assembly 104. Figure 1 In various embodiments, each of the plurality of gas lines 306 may be coupled to a corresponding flow controller 304. The flow controller 304 allows independent control of the flow (e.g., flow rate) of a corresponding gas to the injection port 128 of the injection flange 126 and through it to the interior 122. The flow controller 304 may include any suitable automatic or manual valve that can control the flow rate of gas to a corresponding gas passage disposed within the injection flange 126. Although the injection flange 126 is in Figure 3 The diagram shows nine (9) gas lines 306 with nine (9) corresponding flow controllers 304 and nine (9) injection ports, but the injection flange 126 may include any suitable number of injection ports (and associated gas lines and flow controllers). In some embodiments, the injection flange 126 may include one or ten injection ports fed from one or ten gas lines (via corresponding flow controllers). In some embodiments, the injection flange 126 may include fewer than ten injection ports and corresponding gas lines and flow controllers, fewer than eight injection ports and corresponding gas lines and flow controllers, fewer than five injection ports and corresponding gas lines and flow controllers, or fewer than three injection ports and corresponding gas lines and flow controllers.

[0069] like Figure 1 and Figure 2 As shown, a substrate support 138 is disposed within the chamber interior 122. The substrate support 138 is locating between the injection end 152 and the discharge end 154 of the chamber body 136. The substrate support 138 includes a shaft member 166 disposed within the chamber body 136 and configured to rotate about a rotation axis within the chamber interior 122. The substrate support 138 may be formed of an opaque material, such as silicon carbide or bulk graphite.

[0070] The upper heater element array 140 may be configured to heat the substrate 146 and / or epitaxial layer 144 during deposition on the substrate 146 by radiatively transferring heat into the chamber interior 122. The upper heater element array 140 may include a plurality of upper linear luminaires supported above the chamber body 136 (e.g., above the upper wall 148) and optically coupled to the substrate support 138 via a material forming the chamber body (e.g., quartz). The lower heater element array 142 may be similar to the upper heater element array 140 and may also be configured to heat the substrate 146 and / or epitaxial layer 144 during deposition on the substrate 146. The lower heater element array 142 may include a plurality of lower linear luminaires supported below the chamber body 136 (e.g., below the lower wall 150) and optically coupled to the substrate support 138 via a material forming the chamber body 136. In various embodiments, the upper heater element array 140 and / or the lower heater element array 142 can be used in conjunction with various plasma generation devices (114, 116) for epitaxial deposition of the epitaxial layer 144 on the substrate 146.

[0071] Semiconductor processing system 100 includes an evacuation assembly 108. The evacuation assembly 108 is configured to evacuate a chamber assembly 102 and may include one or more vacuum pumps 168 and a purging system 170. The vacuum pumps 168 are connected to the chamber assembly 102 and configured to control the pressure within the chamber interior 122. The purging system 170 is connected to one or more vacuum pumps 168 and configured to process the flow of residual precursors and / or reaction products discharged from the chamber assembly 102. In some embodiments, the evacuation assembly 108 is configured to maintain environmental conditions within the chamber interior 122 suitable for deposition operations. In one example, the evacuation assembly 108 is configured to maintain environmental conditions within the chamber interior 122 that are suitable for extending the lifetime of reactive materials generated by plasma generation devices (e.g., 114, 116).

[0072] The semiconductor processing system 100 also includes a controller 110, which includes a processor and a memory. The memory has instructions recorded in the memory. When the processor reads the instructions, the instructions cause the processor to perform a process for depositing an epitaxial layer 144 on the substrate 146, as described in detail below.

[0073] The semiconductor processing system 100 may include a plasma power / control system 112. In some embodiments, the plasma power / control system 112 may be employed in addition to the controller 110. In some embodiments, a single controller (e.g., 110 or 112) may be used to operate the semiconductor processing system 100. Figure 1 Various systems / subsystems of the plasma generator (114 and / or 116) are used to power and control the generation of reactive substances inside the chamber.

[0074] According to examples of this disclosure, the plasma power / control system 112 may include various systems and subsystems for generating and controlling the plasma, including, for example, a power supply and a matching network. The power supply may be selected from DC power supplies, AC power supplies, RF power supplies, microwave power generators, etc. The plasma power / control system 112 may include a matching network. For example, a matching network may be employed to adjust the impedance between the power supply and the plasma load to ensure efficient power delivery and stable plasma conditions within the chamber 122. Furthermore, the plasma power / control system 112 may include various sensors and monitoring systems to assess the plasma state and / or the generation of reactive substances within the chamber 122.

[0075] According to examples of this disclosure, semiconductor processing system 100 and, in particular, chamber device 102 (such as...) Figure 1 , Figure 2 and Figure 3 (As shown) includes a plasma generation apparatus configured to generate reactive material from a vapor process gas supplied via an optional gas distribution assembly 106. In such an example, the reactive material can be generated within a chamber 122 at a plasma generation region disposed between the injection flange 126 and the substrate support 138.

[0076] In various embodiments, the plasma generating apparatus includes one or more internal components disposed within the interior 122. For example, Figure 1 , Figure 2 and Figure 3 An internal element 114 configured to generate reactive substances (e.g., from plasma) within an interior 122 is shown, as described in detail below.

[0077] In various embodiments, the plasma generating apparatus includes one or more external elements disposed around the exterior 160 of the chamber. For example, Figure 1 , Figure 2 and Figure 3 An external element 116 configured to generate reactive substances within the interior 122 (e.g., from plasma) is shown, as described in detail below.

[0078] According to examples of this disclosure, a plasma generating apparatus may include one or more internal filaments disposed within a chamber. In such an example, the internal filaments may be positioned between an injection flange and a substrate support.

[0079] Figure 4 A plan view of a chamber device 402 is shown, which includes an internal filament 404 configured to generate a reactive substance within a chamber interior 122.

[0080] In various embodiments, the internal filament 404 is positioned between the injection flange 126 and the substrate support 138. In one example, the internal filament 404 is longitudinally (i.e., along...). Figure 1 The longitudinal axis 156 is positioned between the front face 162 of the injection flange 126 and the outer periphery 406 of the substrate support 138. In another example, the inner filament 404 is longitudinally positioned between the front face 162 of the injection flange 126 and the outer periphery 408 of the substrate 146.

[0081] According to an example of this disclosure, the internal filament 404 may be longitudinally proximal to a plurality of injection ports 128. In some embodiments, the internal filament 404 is positioned proximal to the plurality of injection ports 128. For example, the internal filament 404 may be positioned proximal to the plurality of injection ports such that the internal filament 404 is aligned with the flow path of the gaseous process gas entering the chamber 122 (e.g., ...). Figure 4 The process gas flow (shown in Figure 124) intersects.

[0082] According to an example of this disclosure, the internal filament 404 may extend perpendicularly (perpendicular to the longitudinal axis 156) between the first sidewall 202 and the second sidewall 204 opposite to the first sidewall 202. In such an example, the internal filament 404 may be oriented parallel to the front face 162 of the injection flange 126, as... Figure 4 As shown. In some embodiments, the internal filament 404 extends vertically into the chamber 122 between a first injection port 410 (among the plurality of ports 128) and a last injection port 412 (among the plurality of ports 128). In such an embodiment, the internal filament 404 extends vertically across the entire range of the process gas flow 124 introduced into the chamber 122 through the plurality of injection ports 128. In such an embodiment, the internal filament 404 extends vertically across the entire diameter of the substrate 146 disposed on the substrate support 138.

[0083] According to an example of this disclosure, the internal filament 404 is electrically connected to an external plasma power / control system (e.g., Figure 1 (112). In such an example, the inner filament 404 includes a first filament contact 414 and a second filament contact 416. In some examples, both the first filament contact 414 and the second filament contact 416 may extend through the first sidewall 202 (from the interior 122 to the exterior 160) and through it to the plasma power / control system 112. Figure 1In such an example, the first sidewall 202 may include a feedthrough 418 extending through the first sidewall 202 from the interior 122 to the exterior 160. The feedthrough 418 may include a hole formed through the entire thickness of the first sidewall 202 to allow electrical connection between the plasma power / control system 112 and the internal filament 404. Furthermore, the feedthrough 418 may be configured and arranged to seal and isolate the interior 122 from the exterior 160 to allow the chamber body to be placed under vacuum. Additionally, the feedthrough 418 may be configured and arranged to prevent electrical short circuits between the contacts (414, 416) and the internal filament 404. Furthermore, the feedthrough 418 may provide a support assembly for the internal filament 404 within the interior 122, thereby maintaining the internal filament 404 in optimal position relative to internal components within the interior 122. In such an example, the internal filament 404 may be cantilevered, as described below.

[0084] Figure 5 It shows ( Figure 4 The chamber device 402 passes through the AA plane (e.g.) Figure 1 A cross-sectional view (as shown).

[0085] In various embodiments, the internal filament 404 is cantilevered and supported within the chamber 122, between the injection flange 126 and the substrate support 138. In such embodiments, the internal filament 404 is cantilevered and supported at the first sidewall 202 and not at the second sidewall 204 (and vice versa), as... Figure 5 As shown.

[0086] According to examples of this disclosure, the inner filament 404 may comprise a single continuous (e.g., electrical / physical) filament. In some embodiments, the inner filament 404 includes an upper filament portion 502 and a lower filament portion 504. Figure 5 In some embodiments, the upper filament portion 502 and the lower filament portion 504 are close to or adjacent to each other, while maintaining a sufficient distance between the two filament portions to prevent electrical short circuits between the two filament portions (502 and 504).

[0087] In various embodiments, the internal filament 404 is vertically positioned within the chamber interior 122 (i.e., along the vertical chamber axis 506), such that the internal filament 404 is close to a plurality of injection ports 128 (e.g., Figure 5 (As shown). In some embodiments, the internal filament 404 is vertically positioned within the chamber 122 adjacent to a plurality of injection ports 128. In some embodiments, the internal filament 404 is vertically positioned close to the plurality of injection ports 128 such that the internal filament 404 intersects the flow path of the gaseous process gas entering the chamber 122.

[0088] Figure 6 It shows the passage through the AA plane (e.g.) Figure 1 The diagram shows a cross-sectional view of the chamber device 602. The chamber device 602 may be similar to... Figure 4 and Figure 5 The chamber device 402, in addition to the arrangement of internal filaments inside the chamber.

[0089] According to an example of this disclosure, chamber device 602 includes an internal filament 604. The internal filament 604 may be positioned as previously described (both longitudinally and vertically). In some embodiments, the internal filament 604 includes an upper filament portion 606 and a lower filament portion 608, as described above.

[0090] According to an example of this disclosure, the internal filament 604 may include a first end 610 supported at a first sidewall 202 and a second end 612 supported at a second sidewall 204. In such an example, the internal filament 604 is supported at two lateral sidewalls (202 and 204) of the chamber body 136.

[0091] In some embodiments, the first end 610 of the internal filament 604 may be supported at the first sidewall 202 by an assembly including a first filament contact 616, a second filament contact 618, and a feedthrough 620 (as described above). In some embodiments, the chamber assembly 602 may include a filament support 614 configured to support the second end 612 of the internal filament 604 at the second sidewall 204. In some examples, the filament support 614 is disposed within the chamber interior 122. In some embodiments, the filament support 614 comprises an insulating material, such as quartz and / or silicon carbide. In various examples, the filament support 614 is made of quartz. In some examples, the filament support 614 may be an integral element of the chamber body 136.

[0092] Figure 7 The chamber device 702 is shown passing through the AA plane (e.g.) Figure 1 The cross-sectional view shown is shown. The chamber device 702 can be similar to chamber devices 402 and 602, except for the arrangement of the internal filaments inside the chamber.

[0093] According to an example of this disclosure, chamber device 702 includes an internal filament 704. The internal filament 704 can be positioned (both longitudinally and vertically) as previously described with reference to internal filaments 404 and 604.

[0094] In various embodiments, the internal filament 704 may include a first end 706 supported at a first sidewall 202 and a second end 708 supported at a second sidewall 204. For example, the internal filament 704 may be supported at two lateral sidewalls (202 and 204) of the chamber body 136. In the chamber device 702, the first end 706 of the internal filament 704 may be supported at the first sidewall 202 by an assembly including a first filament contact 714 and a first feedthrough 710, and the second end 708 of the internal filament 704 may be supported at the second sidewall 204 by an assembly including a second filament contact 716 and a second feedthrough 712. In such an example, the internal filament 704 is electrically connected to an external plasma power / control system (e.g., [missing information]) via a first filament contact 714 extending through the first sidewall 202 and a second filament contact 716 extending through the second sidewall 204 opposite to the first sidewall 202. Figure 1 Plasma power / control system 112).

[0095] Figure 8 and Figure 9 The chamber device 802 is shown. For example, Figure 8 It shows the passage through the AA plane (e.g.) Figure 1 A cross-sectional view of the chamber device 802 shown, and Figure 9 A plan view of chamber device 802 is shown. Chamber device 802 can be similar to chamber devices 402, 602 and 702, except for the arrangement of internal filaments within the chamber.

[0096] According to an example of this disclosure, the chamber device 802 includes a plurality of internal filaments 804. In such an example, each of the plurality of internal filaments 804 is positioned near one of the plurality of injection ports 128 such that each of the plurality of internal filaments 804 intersects a separate flow path 904 of a gaseous process gas introduced by one of the plurality of injection ports 128. In such an example, each of the plurality of internal filaments 804 may be longitudinally and vertically positioned within the chamber interior 122 to approach and / or be adjacent to one of the injection ports 128.

[0097] Multiple internal filaments 804 can be controlled by a plasma power / control system 112 ( Figure 1 Individual electrical contact and control. In some embodiments, each of the plurality of internal filaments includes a first contact and a second contact that are routed from the interior 122 to the exterior 160 and thereon to the plasma power / control system 112. For example, Figure 8 and Figure 9An exemplary single internal filament 810 (among a plurality of internal filaments 804) is shown, which includes a first contact 806 and a second contact 808. Each of the individual internal filaments (e.g., 810) constituting a plurality of internal filaments 804 may each include a first contact and a second contact.

[0098] In some embodiments, each of the first and second contacts of the plurality of internal filaments 804 electrically connected to the plasma power / control system 112 can be routed to the outside 160 via the injection flange 126. In one example, a series of feedthroughs can be disposed from the interior 122 (e.g., through the front side 162 of the injection flange 126) through the injection flange 126 to the outside 160, and through the plasma power / control system 112, such as... Figure 9 An exemplary flange feeder 906 is shown. In some embodiments, the injection flange 126 includes a single flange feeder through which all first and second contacts are routed from interior 122 to exterior 160 (not shown).

[0099] In some embodiments, each of the first and second contacts electrically connecting the plurality of internal filaments 804 to the plasma power / control system 112 can be routed to the outside 160 of the chamber via one or more feedthroughs disposed in the wall of the chamber body 136. In such an example, the feedthroughs may include a first feedthrough 710 and / or a second feedthrough 712, such as Figure 7 As shown.

[0100] like Figure 8 The above and previous references Figure 3The chamber device 802 may include a gas distribution assembly 302. The gas distribution assembly 302 may be configured to control the flow rate of the gaseous process gas through each of the respective injection ports using a plurality of gas lines 306 and their associated flow controllers 304. In some examples, the gas distribution assembly 302, combined with a plurality of individually controllable internal filaments 804, may provide a means of altering the properties of the plasma and thus generating reactive material perpendicularly across the width of the chamber interior 122 (i.e., perpendicular to the longitudinal axis 156) and therefore across the substrate 146 disposed within the chamber interior. In such examples, the uniformity of the epitaxial layer 144 deposited on the substrate 146 may be controlled and / or improved. In some embodiments, the gas distribution assembly 302 controls the individual flow to each of the plurality of injection ports to control the uniformity of the epitaxial layer 144 deposited on the substrate 146. In some embodiments, a plasma power / control system 112 controls each of the plurality of internal filaments 804 to control the uniformity of the epitaxial layer 144 deposited on the substrate 146. In some embodiments, the uniformity of the epitaxial layer 144 deposited on the substrate 146 can be controlled by both the gas distribution assembly 302 and the plasma power / control system 112.

[0101] According to examples of this disclosure, a plasma generating apparatus for generating reactive substances within a chamber may include one or more external elements. In some embodiments, the one or more external elements may be positioned around the exterior of the chamber. In such an example, the external elements may be disposed around the exterior of the chamber and may be supported by the chamber body between an injection flange and a substrate support.

[0102] In various embodiments, the external element for generating reactive substances inside the chamber may include a pair of external electrodes.

[0103] Figure 10 A cross-sectional view of a chamber device 1002 including a pair of electrodes is shown. In various embodiments, the pair of external electrodes includes an upper electrode 1004 located above an upper wall 148 of the chamber body 136 and a lower electrode 1006 located below a lower wall 150 of the chamber body 136. In such embodiments, the upper electrode 1004 and the lower electrode are longitudinally positioned between an injection flange 126 and a substrate support 138. In some embodiments, the upper electrode 1004 and the lower electrode 1006 are longitudinally close to or adjacent to a plurality of injection ports (e.g., Figure 10 (Exemplary injection port 128 is shown in the example). In such an example, the upper electrode 1004 includes an upper electrode contact 1008, and the lower electrode 1006 includes a lower electrode contact 1010 for connecting the upper and lower electrodes to the plasma power / control system 112.

[0104] Figure 11A cross-sectional view of a chamber device 1102 including a pair of external electrodes is shown. In various embodiments, the pair of external electrodes may include a first lateral electrode 1104 positioned near the outer surface of a first sidewall 202 and a second lateral electrode 1106 positioned near the outer surface of a second sidewall 204 opposite to the first sidewall 202.

[0105] In some embodiments, the first lateral electrode 1104 and the second lateral electrode 1106 are longitudinally positioned between the injection flange 126 and the substrate support 138. In some embodiments, the first lateral electrode 1104 and the second lateral electrode 1106 are longitudinally close to or adjacent to a plurality of injection ports 128. In such an example, the first lateral electrode 1104 includes a first lateral electrode contact 1108, and the second lateral electrode 1106 includes a second lateral electrode contact 1110 for connecting the first lateral electrode and the second lateral electrode to the plasma power / control system 112.

[0106] In various embodiments, the external element for generating reactive material inside the chamber may include one or more external coils. In such embodiments, one or more external coils may extend around the outside of the chamber between the injection flange and the substrate support.

[0107] Figure 12 A cross-sectional view of a chamber device 1202 according to an embodiment of the present disclosure is shown. In various embodiments, the chamber device 1202 includes a first external coil 1204 and a second external coil 1206, the first external coil 1204 extending laterally around a chamber exterior 160 and longitudinally adjacent to an injection flange 126, and the second external coil 1206 extending laterally around a chamber exterior 160 and longitudinally adjacent to a substrate support 138. In some embodiments, the first external coil 1204 is connected to a plasma power / control system 112 via a first coil contact 1208, and the second external coil 1206 is connected to the plasma power / control system 112 via a second coil contact 1210. In some embodiments, the first external coil 1204 may be positively biased, and the second external coil 1206 may be negatively biased.

[0108] The various embodiments provided may include a semiconductor processing system 100, which includes a controller 110 (which may also be incorporated into a plasma power / control system 112), the controller 110 being communicatively coupled to various other components of the semiconductor processing system 100, such as... Figure 1 As shown (including) Figures 2 to 12The controller 110 can be configured to control the operation of the associated chamber devices (as shown) and can be configured to control their operation. For example, the controller 110 can control plasma generation devices (e.g., internal elements 114 and / or external elements 116), such as by controlling one or more of plasma power and ignition. The controller 110 can control the flow of gaseous process gas from the injection flange into the chamber 122. The controller 110 can control the flow of reactive substances generated in the chamber above the substrate support 138. The controller 110 can control the placement of the substrate 146 on the substrate support 138, the heating of the substrate (e.g., using an upper heater element array 140 and / or a lower heater element array 142), and / or the flow of one or more gases supplied by the gas source assembly, and additionally control the gas distribution assembly 302 to the injection flange 126.

[0109] In various embodiments, the controller includes a processor and a memory having instructions recorded in the memory that, when read by the processor, cause the processor to: place a substrate on a substrate support; provide a controlled flow of gaseous process gas to an injection flange and through it to a chamber; and activate plasma generation means to generate reactive material from the gaseous process gas within the chamber between the injection flange and the substrate support at a plasma generation region to deposit one or more epitaxial layers onto the substrate.

[0110] The various embodiments provided include methods for depositing epitaxial layers using the previously described semiconductor processing system and chamber apparatus. Figure 13 A method 1300 for depositing an epitaxial layer on a substrate via a plasma-assisted chemical vapor deposition process is shown. The method includes: a chamber body having an upper wall, a lower wall, a first sidewall, and a second sidewall opposite to the first sidewall, wherein the upper wall extends longitudinally between an injection end and a longitudinally opposite discharge end, and the lower wall is below the upper wall and parallel to the upper wall (step 1302); placing the substrate on a substrate support disposed within a chamber interior between the injection end and the discharge end (step 1304); introducing a gaseous process gas into the chamber interior through an injection flange including a plurality of injection ports, the injection flange being coupled to the injection end of the chamber body (step 1306); generating a reactive material within the chamber interior at a plasma generation region disposed between the injection flange and the substrate support (step 1308); and depositing one or more epitaxial layers on the substrate (step 1310).

[0111] In some embodiments, method 1300 further includes the step of heating a substrate to a deposition temperature using an array of heater elements, the array of heater elements surrounding an external chamber support and optically coupled to a substrate support, the array of heater elements including: a plurality of lower linear luminaires supported below the chamber body and optically coupled to the substrate support via a quartz material forming the chamber body; and a plurality of upper linear luminaires supported above the chamber body and optically coupled to the substrate support via a quartz material forming the chamber body.

[0112] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0113] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed.

Claims

1. A semiconductor processing system configured for performing a plasma enhanced epitaxy deposition process, the semiconductor processing system comprising: a chamber body having an upper wall, a lower wall, a first sidewall, and a second sidewall opposite the first sidewall, wherein the upper wall extends longitudinally between an injection end and a longitudinally opposite exhaust end, and the lower wall is below and parallel to the upper wall; a substrate support configured to support a substrate and disposed within a chamber interior between the injection end and the exhaust end; an injection flange comprising a plurality of injection ports coupled to the injection end and configured for introducing a gas phase process gas into the chamber interior; and a plasma generating arrangement configured for generating reactive species from the gas phase process gas within the chamber interior at a plasma generation zone disposed between the injection flange and the substrate support. The plasma generating arrangement comprises one or more internal elements disposed within the chamber interior.

2. The semiconductor processing system of claim 1, wherein, The plasma generating arrangement comprises an internal filament positioned longitudinally between the injection flange and the substrate support.

3. The semiconductor processing system of claim 2, wherein, The internal filament is positioned proximate to the plurality of injection ports such that the internal filament intersects a flow path of the gas phase process gas into the chamber interior.

4. The semiconductor processing system of claim 3, wherein, The internal filament extends perpendicularly between the first sidewall and the second sidewall opposite the first sidewall.

5. The semiconductor processing system of claim 4, wherein, The internal filament is electrically coupled to an external plasma power / control system by a first contact and a second contact both extending through the first sidewall from the chamber interior to a chamber exterior.

6. The semiconductor processing system of claim 5, wherein, The internal filament is supported at the first sidewall by a cantilevered configuration.

7. The semiconductor processing system of claim 6, wherein, The internal filament is electrically coupled to a plasma power / control system by a first contact extending through the first sidewall and a second contact extending through the second sidewall opposite the first sidewall.

8. The semiconductor processing system of claim 5, wherein, The internal filament is one of a plurality of internal filaments, and each of the plurality of internal filaments is positioned proximate to one of the plurality of injection ports such that each of the plurality of internal filaments intersects a separate flow path of the gas phase process gas introduced by one of the plurality of injection ports.

9. The semiconductor processing system of claim 3, wherein, Each of the plurality of internal filaments is electrically coupled to a plasma power / control system by a first contact and by a second contact.

10. The semiconductor processing system of claim 9, wherein, The plasma generating arrangement comprises one or more external elements positioned about a chamber exterior.

11. The semiconductor processing system of claim 1, wherein, The plasma generating arrangement comprises a pair of external electrodes positioned about the chamber exterior.

12. The semiconductor processing system of claim 11, wherein, The pair of external electrodes comprises an upper electrode positioned above the upper wall of the chamber body and a lower electrode positioned below the lower wall of the chamber body.

13. The semiconductor processing system of claim 12, wherein, The pair of external electrodes comprises a first lateral electrode positioned proximate to an outer surface of the first sidewall and a second lateral electrode positioned proximate to an outer surface of the second sidewall opposite the first sidewall.

14. The semiconductor processing system of claim 12, wherein, The plasma generating arrangement comprises one or more external coils extending about the chamber exterior between the injection flange and the substrate support.

15. The semiconductor processing system of claim 11, wherein, The plasma generating arrangement comprises a first external coil extending laterally about the chamber exterior and longitudinally proximate to the injection flange and a second external coil extending laterally about the chamber exterior and longitudinally proximate to the substrate support.

16. The semiconductor processing system of claim 11, wherein, ​ 17. The semiconductor processing system of claim 1, wherein, The injection flange further includes a plurality of flow controllers configured to control the flow of the gas-phase process gas from the gas source assembly to and through the plurality of injection ports to the chamber interior.

18. The semiconductor processing system of claim 17, wherein, The gas source assembly includes a silicon precursor source in fluid communication with the injection flange, and wherein the reactive species include one or more of silicon radicals, silicon metastables, and silicon ions.

19. The semiconductor processing system of claim 1, wherein, The chamber body has a plurality of exterior ribs extending laterally around the chamber exterior and longitudinally spaced apart from one another between an injection end and a longitudinally opposite exhaust end of the chamber body.

20. The semiconductor processing system of claim 19, further comprising an array of heater elements supported around the chamber exterior and optically coupled to the substrate support, the array of heater elements comprising: a plurality of lower linear lamps supported below the chamber body and optically coupled to the substrate support through a quartz material forming the chamber body; and a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support through a quartz material forming the chamber body.

21. The semiconductor processing system of claim 20, further comprising a controller including a processor and a memory having instructions recorded on the memory, the instructions when read by the processor cause the processor to: position a substrate on the substrate support; provide a controlled flow of the gas-phase process gas to and through the injection flange to the chamber interior; and activate the plasma generation device to generate the reactive species from the gas-phase process gas at the plasma generation region to deposit one or more epitaxial layers onto the substrate.

22. A method for depositing epitaxial layers on a substrate by a plasma- assisted chemical vapor deposition process, the method comprising: positioning a substrate on a substrate support disposed within the chamber interior between the injection end and the exhaust end; introducing a gas-phase process gas into the chamber interior through an injection flange including a plurality of injection ports, the injection flange coupled to the injection end of the chamber body; generating the reactive species within the chamber interior at a plasma generation region disposed between the injection flange and the substrate support by activating a plasma generation device configured to decompose the gas-phase process gas into the reactive species; and depositing one or more epitaxial layers on the substrate.

23. The method of claim 22, further comprising heating the substrate to a deposition temperature with an array of heater elements supported around the chamber exterior and optically coupled to the substrate support, the array of heater elements comprising: a plurality of lower linear lamps supported below the chamber body and optically coupled to the substrate support through a quartz material forming the chamber body; and a plurality of upper linear lamps supported above the chamber body and optically coupled to the substrate support through a quartz material forming the chamber body. ​ ​ ​

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