AlBN nanocrystalline film and preparation method thereof

Abstract

The invention provides an AlBN nanocrystalline film and a preparation method thereof. The preparation method comprises the following steps: forming a ternary amorphous AlBN film on the surface of a substrate; the substrate with the ternary amorphous AlBN thin film formed on the surface is placed in the visual field of an electron microscope or a microscope equipped with a laser direct writing system, electron beams of the electron microscope or laser beams of the laser direct writing system are adopted to irradiate the ternary amorphous AlBN thin film so as to induce crystallization of the ternary amorphous AlBN thin film, and the AlBN nanocrystalline thin film is generated. According to the method, the ternary amorphous AlBN thin film can be induced to be converted into the AlBN nanocrystalline thin film, the crystallization range can be accurately controlled through the observation performance of an electron microscope and a laser direct writing microscope, in-situ research can be conducted on the crystallization process in time, and the method integrates preparation, observation and research.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, specifically relating to an AlBN nanocrystalline thin film and its preparation method. Background Technology

[0002] Nanocrystalline materials are composed of crystals with a nanoscale size (1~10 nm). Their atomic arrangement differs from both the ordered crystalline state and the completely disordered amorphous state (or glassy state). Due to their extremely small grain size, grain boundaries can occupy half or more of the entire material volume. This means that grain boundaries are an important part of the material, affecting its properties and behavior.

[0003] There are three main methods for preparing nanocrystalline thin films: physical methods, chemical methods, and biological methods. Chemical methods utilize solution reactions, gel reactions, hydrothermal synthesis, etc., to form nanocrystals or nanowires in a solution system, and then obtain nanocrystalline thin films using various methods such as centrifugation, filtration, and ion exchange. This method is relatively complex. Biological methods include research on preparing nanocrystalline thin films using biological methods such as photosynthesis. Some studies have also used bacteria to form nanocrystalline particles in water and assemble them into thin films. However, the quality of films prepared by chemical and biological methods is limited, with problems such as uniformity and purity. Physical methods utilize physical techniques such as sputtering, vapor deposition, photolithography, and electron beams to prepare nanocrystalline thin films, which have significant advantages in preparing high-quality and high-precision nanocrystalline thin film materials. Among them, sputtering is one of the more mature preparation methods. By bombarding a material target with electron beams or plasma in a vacuum environment, atoms or molecules are sputtered out to form a thin film. However, current physical methods for preparing nanocrystalline thin films with complex morphologies or multi-components are cumbersome and inefficient. At the same time, it is impossible to precisely control the crystallization range and it lacks the ability to conduct in-situ observation and research on the crystallization process. Summary of the Invention

[0004] To solve all or part of the above-mentioned technical problems, the present invention provides the following technical solutions: A first aspect of the present invention is to provide a method for preparing an AlBN nanocrystalline thin film, comprising: A ternary amorphous AlBN thin film is formed on the substrate surface; The substrate on which the ternary amorphous AlBN thin film is formed is placed in the field of view of an electron microscope or a laser direct writing system. The ternary amorphous AlBN thin film is irradiated with the electron beam of the electron microscope or the laser beam of the laser direct writing system to induce the ternary amorphous AlBN thin film to crystallize and generate an AlBN nanocrystalline thin film.

[0005] The method provided by this invention can not only induce crystallization of amorphous AlBN thin film materials simply and efficiently, but also allows for precise control of the crystallization range by utilizing the observation performance of microscopes equipped with electron microscopes or laser direct writing systems, and enables in-situ observation and study of the crystallization process in real time.

[0006] In some embodiments, the irradiation range of the electron beam or laser beam is set according to the desired crystallization range, the irradiation intensity of the electron beam or laser beam is set according to the desired crystallization rate, the irradiation voltage of the electron beam is set according to the desired crystal structure, and the irradiation time of the electron beam or laser beam is set according to the desired grain size, thereby obtaining an AlBN nanocrystalline thin film.

[0007] In some embodiments, the preparation method further includes: in-situ real-time observation of the crystallization process using the electron microscope or the microscope equipped with the laser direct writing system.

[0008] In some embodiments, the preparation method further includes: during the irradiation process using an electron beam or laser beam, Simultaneous application of cold or hot fields, along with real-time monitoring of thin film performance changes, provides experimental evidence for the study of the crystallization mechanism and corresponding structural properties of AlBN materials.

[0009] In some embodiments, the electron beam is a high-energy electron beam. The energy density of the high-energy electron beam can be 100 mJ / cm². 2 ~600 mJ / cm 2 The voltage can be 100kV~500kV, and the irradiation time can be 1s~600s.

[0010] In some embodiments, the laser beam is a focused high-energy pulsed laser beam. Further, the focused high-energy pulsed laser beam can be, for example, any one of an ultraviolet laser beam, a visible light laser beam, a nanosecond laser beam, a picosecond laser beam, or a femtosecond laser beam. The energy density of the focused high-energy pulsed laser beam can be 200 mJ / cm². 2 ~600 mJ / cm 2 The irradiation time can be from 1s to 600s.

[0011] The electrical and thermal conductivity of the substrate plays a crucial role in regulating the energy transfer efficiency, heat distribution uniformity, and interfacial charge state during the crystallization process. These properties are important factors influencing the nucleation mechanism, grain growth kinetics, and interfacial bonding quality of nanocrystalline thin films. In some embodiments, based on the electrical and / or thermal conductivity of the substrate, an electron beam or laser beam is selected to irradiate the ternary amorphous AlBN thin film, and the irradiation parameters of the electron beam or laser beam are adjusted to form AlBN nanocrystalline thin films.

[0012] The substrate may be, for example, a Si substrate, a glass substrate, an n-type GaN substrate, an Al2O3-based GaN substrate, a sapphire substrate, etc., but is not limited to these.

[0013] In some embodiments, when the substrate is a substrate with a conductivity of 10 S / cm or higher (such as a Si substrate or a GaN substrate), the ternary amorphous AlBN thin film is irradiated with a high-energy electron beam. The accelerating voltage of the high-energy electron beam is 100kV~500kV, and the energy density is 100mJ / cm. 2 ~600mJ / cm 2 The crystallization process employs a high-energy electron beam scanning method, with a beam irradiation time of less than 600 seconds. For substrates with good conductivity, the electron beam energy is slightly higher and the irradiation time is longer. This is to overcome the substrate's efficient heat dissipation capacity and achieve effective phase transition crystallization.

[0014] In some embodiments, the substrate has a conductivity of 10. -8 When the insulating substrate (such as a glass substrate) has an energy density of less than S / cm, the ternary amorphous AlBN thin film is irradiated with an electron beam at an energy density of 80 mJ / cm. 2 ~500mJ / cm 2 The irradiation time is less than 480s. A high-energy electron beam injects a large amount of charge into the sample. If the substrate has poor conductivity, the charge will accumulate continuously, and the surface potential of the thin film will rise sharply (up to thousands or even tens of thousands of volts). In order to prevent uncontrollable damage and processing defects caused by charge accumulation and heat accumulation, the electron beam energy is slightly lower and the irradiation time is shortened for substrates with poor conductivity.

[0015] In some embodiments, the substrate has a thermal conductivity of 200~300 W / (m²). When using a substrate with good thermal conductivity, such as an n-type GaN substrate, the ternary amorphous AlBN thin film is irradiated with a focused high-energy pulsed laser beam. The laser wavelength is 193 nm to 800 nm, and the energy density is 150 mJ / cm². 2 ~600mJ / cm 2 The pulse width is less than 100ps and the pulse frequency is 5Hz~20Hz.

[0016] In some embodiments, the substrate has a thermal conductivity of 20~100 W / (m²). When using a substrate with poor thermal conductivity, such as sapphire, the ternary amorphous AlBN thin film is irradiated with a focused high-energy pulsed laser beam. The laser wavelength is 248 nm to 800 nm, and the energy density is 100 mJ / cm². 2 ~500mJ / cm 2 The pulse width is 500fs~900ns and the pulse frequency is 1Hz~10kHz.

[0017] For substrates with different thermal conductivity, by adjusting the combination of energy-time parameters, the inherent thermophysical properties of the materials can be actively matched and overcome, thereby achieving controllable preparation of phase change crystallization.

[0018] Based on the electrical and / or thermal conductivity of the substrate, an electron beam or laser beam processing mode that is well matched to it is selected, and the irradiation conditions are precisely controlled to induce excellent crystallization of amorphous AlBN thin films.

[0019] In some embodiments, the ternary amorphous AlBN thin film comprises, by atomic percentage: 45%~55% N atoms, 5%~30% B atoms, and the remainder comprises Al atoms.

[0020] In some embodiments, the thickness of the ternary amorphous AlBN film is greater than 0 and less than or equal to 5 μm.

[0021] In some embodiments, the ternary amorphous AlBN film maintains a uniform amorphous state when not treated with an electron beam or laser beam.

[0022] In some embodiments, the method for forming a ternary amorphous AlBN thin film on the substrate surface includes one or more combinations of pulsed laser deposition, magnetron sputtering, molecular beam epitaxy, metal-organic vapor phase epitaxy, and atomic layer deposition.

[0023] In some embodiments, a ternary amorphous AlBN thin film is formed on the substrate surface using pulsed laser deposition, specifically including: Provide substrate; Furthermore, pulsed laser deposition technology is used to deposit AlBN ceramic target on the substrate surface to form a ternary amorphous AlBN thin film.

[0024] Specifically, the preparation method of the ternary amorphous AlBN thin film may include: Clean and dry the substrate; Additionally, the substrate is placed in a growth chamber under high vacuum, the laser is activated, and the pulsed laser beam is focused onto a uniformly rotating ceramic target through a lens and a mirror, generating a plasma plume in a certain N2 atmosphere, and the plasma is uniformly deposited on the substrate that is also rotating at a uniform speed.

[0025] In some more specific embodiments, the preparation method specifically includes: placing the substrate in a vacuum chamber (e.g., a vacuum level of less than 5 × 10⁻⁶). -6In a process involving an AlBN ceramic target (with a purity of 99.9-99.99 wt.%) and nitrogen gas (with a purity of 99.999 wt.%), a pulsed laser deposition technique is employed. The pulsed laser beam is focused onto the AlBN ceramic target through a lens and a mirror, thereby depositing a ternary amorphous insulating dielectric film on the substrate surface. The working gas flow rate is 20-40 sccm, the working gas pressure is 0.2-5.0 Pa, and the deposition time is 1 min-4.0 h.

[0026] The pulsed laser deposition technique uses a krypton fluoride excimer laser with a wavelength of 200-300 nm, a pulse width of 20-30 ns, and a maximum single pulse energy of 700 mJ. Alternatively, the pulsed laser deposition technique can use a laser energy of 250-450 mJ and a pulse repetition frequency of 1.0-5.0 Hz.

[0027] During pulsed laser deposition, the substrate temperature can be 20~30℃, and the substrate rotation speed is 15~20 r / min. The distance between the substrate and the target is 5~7.5 cm. The AlBN ceramic target rotation speed is 15~20 r / min.

[0028] In some more specific embodiments, the preparation method further includes: first cleaning and drying the substrate. The cleaning process may include, for example, ultrasonic cleaning of the substrate using acetone, isopropanol, and water. The drying process may involve blowing nitrogen gas to dry the cleaned substrate.

[0029] In some more specific implementations, pulsed laser deposition (PLD) technology is used to control growth parameters such as ceramic target composition, growth temperature, growth gas pressure, laser energy, and substrate-target distance to create metastable growth conditions and obtain amorphous thin films. The specific steps are as follows: (1) The ceramic target and the substrate dried by cleaning nitrogen gas are introduced into the sample injection chamber (vacuum degree less than 5×10). -6 The target material (Pa) is transferred to the growth chamber, and the target material is placed on the target stage in the growth chamber, while the substrate is placed on the substrate stage. (2) The growth chamber was evacuated to 5×10⁻⁶ using a vacuum pump (mechanical pump and molecular pump). -7 Pa, high-purity nitrogen (99.999%) is introduced into the growth chamber, the N2 flow rate is adjusted to 20~30 sccm, and the molecular pump gate valve is adjusted to maintain the N2 pressure in the growth chamber at 0.2~3.0 Pa; (3) Start the pulsed laser and focus the laser beam onto the ceramic target through the reflector and focusing lens. The laser energy is 250~450 mJ and the laser frequency is 1~5 Hz. The substrate temperature is room temperature to grow the insulating dielectric film. During the growth process, the target stage and the substrate stage rotate at a constant speed to ensure the uniformity of the film formation.

[0030] In step (1) above, a high-quality Al2O3-based n-GaN(002) substrate with a dislocation density of less than 5.0 × 10⁻⁶ can be selected. 8 cm -2 The resistivity is 6.0 × 10⁻⁶. -3 Ω cm. The growth time mentioned in step (3) above is 0~4.0h.

[0031] A second aspect of the present invention is to provide an AlBN nanocrystalline thin film, which is obtained by the preparation method of AlBN nanocrystalline thin film described in any of the technical solutions.

[0032] In some embodiments, the AlBN nanocrystalline film has a nanoscale grain size of 1 nm to 10 nm.

[0033] Compared with the prior art, the present invention has at least the following beneficial effects: The method provided by the present invention utilizes the effects of particle sputtering, impact, and heating caused by electron beam or laser beam irradiation to simply and efficiently induce the crystallization of ternary amorphous AlBN thin films into AlBN nanocrystalline thin films; furthermore, the electron beam or laser beam of the electron microscope and laser direct writing system can be used to precisely control the crystallization range of the material, and the crystallization process can be studied in situ in real time, which is an integrated method of preparation, observation and research. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1a This is a high-resolution transmission microscope image of the ternary amorphous AlBN thin film in Embodiment 1 of the present invention; Figure 1b This is the Fourier transform diagram of the ternary amorphous AlBN thin film in Embodiment 1 of the present invention; Figure 2a This is a high-resolution transmission microscope image of the AlBN nanocrystalline thin film prepared by electron beam irradiation in Example 1 of the present invention. Figure 2bThis is the Fourier transform diagram of the AlBN nanocrystalline thin film prepared by electron beam irradiation in Example 1 of the present invention. Detailed Implementation

[0036] The invention will be more fully understood through the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the invention are disclosed herein; however, it should be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, the specific functional details disclosed herein should not be construed as limiting, but rather as the basis for the claims and as intended to teach those skilled in the art to employ the representative basis of the invention in different ways in any suitable detailed embodiment.

[0037] In addition, unless otherwise specified, all raw materials used in the following embodiments can be purchased from the market or other sources, and all production and testing equipment used are known in the art, as are the testing methods used.

[0038] Example 1 This embodiment provides an AlBN nanocrystalline thin film and its preparation method, specifically including the following steps: (1) A ternary amorphous AlBN thin film is deposited on the surface of an n-type GaN substrate with good thermal conductivity using pulsed laser deposition technology, specifically including: The substrate was placed in a vacuum chamber, and the chamber was evacuated to a vacuum level of less than 5 × 10⁻⁶. -6 The substrate temperature was set to 25℃, and the substrate rotation speed was 15r / min. An AlBN ceramic target was used as the target material, and the distance between the substrate and the target was 7cm. Nitrogen was used as the working gas, with a flow rate of 20sccm and a pressure of 0.5Pa. Pulsed laser deposition technology was adopted, using a krypton fluoride excimer laser with a wavelength of 248nm, a pulse width of 25ns, a maximum single pulse energy of 700mJ, a laser energy of 350mJ, and a pulse repetition frequency of 2Hz. The pulsed laser beam was focused onto the AlBN ceramic target through a lens and a mirror, and the deposition time was 2h, thereby depositing a ternary amorphous AlBN thin film on the substrate surface.

[0039] (2) The above-mentioned ternary amorphous AlBN film was irradiated with an electron beam to form an AlBN nanocrystalline film. Specifically, the ternary amorphous AlBN film was placed in the field of view of an electron microscope, and the required crystallization range on the ternary amorphous AlBN film was irradiated with the high-energy electron beam provided with the electron microscope. The accelerating voltage of the high-energy electron beam was set to 200 kV and the energy density to 200 J / cm². 2 The irradiation time was 10s, which induced the crystallization of ternary amorphous AlBN thin films and generated AlBN nanocrystalline thin films.

[0040] Figure 1a , Figure 1b The images shown are high-resolution transmission microscope images and corresponding Fourier transform images of the ternary amorphous AlBN thin film in this embodiment. Figure 2a , Figure 2b The images shown are high-resolution transmission microscope images and corresponding Fourier transform images of the AlBN nanocrystalline thin films prepared by electron beam irradiation in this embodiment.

[0041] from Figure 1a , Figure 1b It can be seen that the atoms in the untreated ternary amorphous AlBN thin film exhibit a random arrangement, and the FFT diffraction pattern shows a diffuse ring-like characteristic. From Figure 2a , Figure 2b It can be seen that after electron beam irradiation treatment, nanoscale grains appear in the AlBN film, with grain sizes ranging from 1 to 10 nm. The FFT diffraction pattern shows some diffraction bright spots in the diffuse ring.

[0042] Example 2-1 This embodiment provides an AlBN nanocrystalline thin film and its preparation method, specifically including the following steps: (1) A ternary amorphous AlBN thin film was deposited on the surface of a Si substrate with good conductivity using pulsed laser deposition technology. The deposition steps and specific conditions were the same as in Example 1. (2) Irradiating the above-mentioned ternary amorphous AlBN film with an electron beam to form an AlBN nanocrystalline film, specifically including: placing the ternary amorphous AlBN film in the field of view of an electron microscope, irradiating the required crystallization area on the ternary amorphous AlBN film with the high-energy electron beam provided with the electron microscope, and setting the high-energy electron beam... The accelerating voltage is 300 kV, and the energy density is 300 mJ / cm³. 2 The crystallization process employs an electron beam scan-by-line method with a beam irradiation time of 10 seconds to transform the ternary amorphous AlBN film into an AlBN nanocrystalline film.

[0043] Example 3 This embodiment provides an AlBN nanocrystalline thin film and its preparation method, specifically including the following steps: (1) A ternary amorphous AlBN thin film was deposited on the surface of a glass substrate with poor conductivity using pulsed laser deposition technology. The deposition steps and specific conditions were the same as in Example 1. (2) The above-mentioned ternary amorphous AlBN film is irradiated with an electron beam to form an AlBN nanocrystalline film. Specifically, the ternary amorphous AlBN film is placed in the field of view of an electron microscope, and the required crystallization area on the ternary amorphous AlBN film is irradiated with the high-energy electron beam provided with the electron microscope. The energy density of the high-energy electron beam is set to 150 mJ / cm². 2 The irradiation time was 10s to transform the ternary amorphous AlBN film into an AlBN nanocrystalline film.

[0044] Example 4 This embodiment provides an AlBN nanocrystalline thin film and its preparation method, specifically including the following steps: (1) A ternary amorphous AlBN thin film was deposited on the surface of a GaN substrate with good thermal conductivity using pulsed laser deposition technology. The deposition steps and specific conditions were the same as in Example 1. (2) The required crystallization area on the ternary amorphous AlBN thin film was irradiated with the ultraviolet laser beam built into the laser direct writing system. The laser wavelength of the ultraviolet laser beam was 356 nm and the energy density was 300 mJ / cm². 2 The pulse width is 100 ps, ​​the pulse frequency range is 20 Hz, and the irradiation time is 1 s, so as to transform the ternary amorphous AlBN film into an AlBN nanocrystalline film.

[0045] Example 5 This embodiment provides an AlBN nanocrystalline thin film and its preparation method, specifically including the following steps: (1) A ternary amorphous AlBN thin film was deposited on the surface of a sapphire substrate with poor thermal conductivity using pulsed laser deposition technology. The deposition steps and specific conditions were the same as in Example 1. (2) For AlBN thin films grown on substrates with poor thermal conductivity such as sapphire, the energy density of the ultraviolet laser beam used is 356 nm with an energy density of 200 mJ / cm². 2 The pulse width is 100 ps, ​​the pulse frequency range is 20 Hz, and the irradiation time is 2 s.

[0046] The method provided by this invention utilizes the electron beam of an electron microscope or the laser beam of a laser direct writing system to irradiate ternary amorphous AlBN thin films. High-energy induction causes changes in the chemical bonds of atoms in the amorphous film. The electron microscope or the microscope equipped with the laser direct writing system can simply, efficiently, and controllably induce crystallization of the amorphous AlBN thin film material. Furthermore, the crystallization process can be observed in situ in real time, and external fields such as cold and hot fields can be applied in situ and the performance changes can be observed in real time. Thus, it provides experimental evidence for the study of the crystallization mechanism and corresponding structural properties of AlBN materials. It is an integrated method of preparation, observation, and research.

[0047] In addition, the inventors of this case also conducted experiments with other raw materials, process operations, and process conditions described in this specification, referring to the aforementioned embodiments, and obtained relatively ideal results in all cases.

[0048] All aspects, embodiments, features, and examples of this invention should be considered illustrative and used to explain and illustrate the invention, but not to limit the invention. The scope of the invention is defined only by the claims.

[0049] Although the invention has been described with reference to illustrative embodiments, those skilled in the art will understand that various other changes, omissions, and / or additions can be made without departing from the spirit and scope of the invention, and that elements of the described embodiments can be substituted with substantially equivalents. Furthermore, many modifications can be made without departing from the scope of the invention to adapt particular situations or materials to the teachings of the invention. Therefore, this invention is not intended to be limited to the specific embodiments disclosed for carrying out the invention, but rather is intended to encompass all embodiments falling within the scope of the appended claims.

Claims

1. A method for preparing an AlBN nanocrystalline thin film, characterized in that, The method comprises the following steps: forming a ternary amorphous AlBN film on a substrate surface; placing the substrate with the ternary amorphous AlBN film formed on the surface in the field of view of a microscope equipped with an electron microscope or a laser direct writing system, and irradiating the ternary amorphous AlBN film with an electron beam of the electron microscope or a laser beam of the laser direct writing system to induce crystallization of the ternary amorphous AlBN film and generate an AlBN nanocrystalline film. 2.The method of claim 1, wherein: The irradiation range of the electron beam or the laser beam is set according to the required crystallization range, the irradiation intensity of the electron beam or the laser beam is set according to the required crystallization rate, the irradiation voltage of the electron beam is set according to the required crystal structure, and the irradiation time of the electron beam or the laser beam is set according to the required grain size, so as to regulate the crystallization process. 3.The method of claim 1 or 2, wherein: The electron beam is a high-energy electron beam. 4.The method of claim 1 or 2, wherein: The laser beam is a focused high-energy pulsed laser beam.

5. The method for preparing AlBN nanocrystalline thin films according to claim 1, characterized in that: According to the electrical conductivity and / or thermal conductivity of the substrate, the ternary amorphous AlBN film is irradiated with an electron beam or a laser beam, and the conditions of the electron beam or the laser beam irradiation are regulated to form an AlBN nanocrystalline film.

6. The method for preparing AlBN nanocrystalline thin films according to claim 5, characterized in that: When the substrate is a substrate with an electrical conductivity of 10 S / cm or more, the ternary amorphous AlBN film is irradiated with a high-energy electron beam, the acceleration voltage of the high-energy electron beam is 100 kV to 500 kV, the energy density is 100 mJ / cm 2 ~600 mJ / cm 2 , and the crystallization process is performed in a way of line-by-line scanning of the high-energy electron beam, the beam irradiation time is 600 s or less. Alternatively, the substrate is an insulating substrate having an electrical conductivity of 10 -8 S / cm or less, the ternary amorphous AlBN film is irradiated with an electron beam having an energy density of 80 mJ / cm 2 500 mJ / cm 2 and an irradiation time of 480 s or less.

7. The method of claim 5, wherein the AlBN nanocrystalline thin film is prepared by a process comprising: The substrate is a substrate with thermal conductivity of 200-300 W / (m K, and the ternary amorphous AlBN film is irradiated by a focused high-energy pulsed laser beam, the laser wavelength is 193-800 nm, the energy density is 150-600 mJ / cm 2 , the pulse width is less than 100 ps, and the pulse frequency is 5-20 Hz. 2 ​ ​ Or, when the substrate is a substrate with thermal conductivity of 20-100 W / (m K, the ternary amorphous AlBN film is irradiated by a focused high-energy pulsed laser beam, the laser wavelength is 248-800 nm, the energy density is 100-500 mJ / cm 2 2 , the pulse width is 500 fs-900 ns, and the pulse frequency is 1-10 kHz.​ 8. The method for preparing AlBN nanocrystalline thin films according to claim 1, characterized in that, The method further comprises the following steps: in-situ real-time observation of the crystallization process by using the microscope equipped with the electron microscope or the laser direct writing system.

9. The method for preparing AlBN nanocrystalline thin films according to claim 1, characterized in that: The method for forming a ternary amorphous AlBN film on a substrate surface comprises one or more combinations of a pulsed laser deposition method, a magnetron sputtering method, a molecular beam epitaxy method, a metal organic chemical vapor phase epitaxy method, and an atomic layer deposition method.

10. An AlBN nanocrystalline thin film, characterized in that, The AlBN nanocrystalline film is obtained by the method according to any one of claims 1-9.

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