Temperature change testing device of side coil for semiconductor and use method of temperature change testing device
By designing a side coil temperature change testing device for semiconductors, the problems of limited production resources and data acquisition in existing technologies have been solved. This device enables safe and efficient side coil performance testing and thermal characteristic simulation, and provides accurate test data.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-24
- Publication Date
- 2026-03-31
AI Technical Summary
In existing semiconductor manufacturing technologies, the performance verification of side coils relies on actual process chamber testing, which results in heavy consumption of production resources, high costs, and limited data acquisition, making it difficult to fully reflect the thermal distribution characteristics.
Design a semiconductor side coil temperature change testing device, including a base, a simulated load component, a thermal control component, and a detection component. Through mechanical structure, it simulates the thermal characteristics of real process chambers to realize offline heating, cooling, and temperature uniformity testing.
It enables safe and efficient testing of side coil performance offline, reduces production resource consumption and costs, accurately simulates the thermal characteristics of real process chambers, and provides comprehensive and intuitive test data.
Smart Images

Figure CN121762049A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a semiconductor side coil temperature testing device, specifically a semiconductor side coil temperature change testing device and its usage method. Background Technology
[0002] In semiconductor manufacturing processes, thin film deposition equipment such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) has extremely high requirements for temperature uniformity and stability within the reaction chamber. To achieve precise temperature control, these devices are typically equipped with a side coil system, which heats the chamber walls or specific areas through induction heating. This system usually involves a radio frequency (RF) power supply and a corresponding cooling circuit.
[0003] Currently, during equipment installation, commissioning, routine maintenance, or troubleshooting, the performance verification of the opposite coil and its temperature control system typically relies on actual process chambers. This traditional in-situ testing method has several drawbacks in practical applications: First, it consumes significant production resources. Testing requires the coils to be installed on actual production machines, which means that expensive process equipment needs to be occupied for extended periods, leading to reduced equipment production efficiency and directly impacting the production line's efficiency.
[0004] Secondly, testing is costly. Testing on a real machine often requires starting up the entire equipment system, which not only consumes a lot of electricity and cooling water, but sometimes even requires the introduction of expensive process gases to simulate real operating conditions, resulting in unnecessary waste of resources.
[0005] Finally, data acquisition is limited. Due to the structural complexity and space constraints of the actual process chamber, it is difficult for technicians to flexibly place enough temperature sensors on its surface. This results in test data often being limited to a few temperature measurement points provided by the equipment, making it difficult to comprehensively and intuitively reflect the heating rate, heat distribution uniformity, and cooling characteristics of the side coil in different areas, which is not conducive to the accurate diagnosis of potential faults.
[0006] Therefore, developing an offline testing device that can be independently and safely simulate the thermal behavior of side coils without being separated from actual process equipment has become an urgent technical problem to be solved in this field. Summary of the Invention
[0007] The purpose of this invention is to overcome the shortcomings of the prior art and provide a device for testing the temperature change of a side coil for semiconductors and its usage method. This device physically simulates the thermal characteristics of a real process chamber through its mechanical structure, enabling safe and efficient offline testing of the side coil's heating, cooling, and temperature uniformity.
[0008] To achieve the above objectives, the present invention adopts the following technical solution: A temperature change testing device for a semiconductor side coil, comprising: The base provides stable support; A simulated load assembly is vertically mounted on the base for winding the coil to be tested. The simulated load assembly includes a heating plate controlled by a microcomputer, a ceramic cover, and a positioning mechanism for maintaining the coaxiality of the ceramic cover and the base. The inner wall of the ceramic cover has a preset heat capacity to simulate the characteristics of the process chamber. The positioning mechanism includes a concentric positioning ring disposed on the base.
[0009] The thermal control component includes a cooling circulation unit disposed inside the ceramic cover for regulating the temperature; The detection component includes multiple temperature probes embedded in the surface of the ceramic cover for recording temperature data during the testing process.
[0010] Furthermore, the base is made of aluminum alloy, and the ceramic cover is made of aluminum oxide.
[0011] Furthermore, the thickness of the ceramic cover is between 5 mm and 10 mm.
[0012] Furthermore, the cooling circulation unit includes a fluid channel and a flow control valve; Cooling airflow or cooling liquid flow can be introduced into the fluid channel.
[0013] Furthermore, the heating plate is placed inside the inner wall or at the bottom of the ceramic cover to simulate plasma or reaction heat within the process chamber.
[0014] Furthermore, the detection component includes a data acquisition and processing unit, a temperature probe, and a K-type thermocouple.
[0015] The present invention also provides a method of using the above-described device, comprising the following steps: Assembly steps: Wrap the coil to be tested around the outside of the ceramic cover of the simulated load assembly; Simulated heating steps: Start the heating plate to heat the inside of the ceramic cover, and at the same time energize the coil on the side to be tested, and use the detection component to record the temperature rise curve; Simulated cooling procedure: The heating plate is turned off, the cooling circulation unit is started, and the cooling performance of the coil under test and the thermal characteristics of the simulated chamber are tested through heat conduction inside the coil under test and the ceramic cover. Data verification steps: Compare the collected temperature-time curves with the thermal model data of the standard process chamber.
[0016] The beneficial effects of this invention are as follows: 1. Reduce costs and risks: Offline testing avoids occupying expensive production equipment and eliminates the risk of damage to core process chambers due to test failures.
[0017] 2. High-fidelity simulation: Combined with thermal control components, it accurately simulates the heat capacity, heat conduction, heat loss and cooling characteristics of the real process chamber. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a front view of an embodiment of the present invention; Figure 2 This is a schematic diagram of the heating plate structure in one embodiment of the present invention; Figure 3 This is a cross-sectional view of a simulated load component in one embodiment of the present invention; Figure 4 This is a control principle block diagram of an embodiment of the present invention.
[0020] Explanation of reference numerals in the attached figures: 10. Base; 20. Simulated load assembly; 21. Ceramic cover; 22. Positioning mechanism; 23. Heating plate; 3. Cooling circulation unit; 40. Detection components; 41. Temperature probe; 50. Coil to be tested. Detailed Implementation
[0021] The accompanying drawings are for illustrative purposes only and should not be construed as limiting the scope of this patent. To better illustrate this embodiment, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual dimensions of the product.
[0022] It will be understood by those skilled in the art that certain well-known structures and their descriptions may be omitted in the accompanying drawings. The technical solution of the present invention will be further described below with reference to the accompanying drawings and embodiments.
[0023] like Figure 1-4 As shown, this embodiment provides a temperature change testing device for a semiconductor side coil, which aims to accurately simulate the thermal behavior of the side coil in a semiconductor device in an offline environment.
[0024] The device mainly consists of a base 10, a simulated load component 20, a thermal control component, and a detection component 40.
[0025] The base 10, serving as the overall support foundation, is preferably made of aluminum alloy, which is lightweight, high-strength, and corrosion-resistant. The base 10 is equipped with mounting holes and cable channels for securing components and routing cables.
[0026] The simulated load component 20 is vertically mounted on the base 10. Unlike traditional technologies, this embodiment eliminates the metal inner liner and air gap structure, and directly uses a ceramic cover 21 as the core simulation component.
[0027] The ceramic cover 21 is preferably made of alumina (Al2O3), which has stable physical and chemical properties and can withstand high temperatures. The thickness of the ceramic cover 21 is designed to be 5mm to 10mm. This thickness range, combined with the specific heat capacity of alumina, allows its inner wall to have a preset heat capacity, thereby accurately simulating the thermal characteristics of the wall of a real process chamber. The coil 50 on the side to be tested is directly wound around the outer wall of the ceramic cover 21.
[0028] To ensure structural stability and coaxiality, the device is equipped with a positioning mechanism 22. Specifically, the positioning mechanism 22 includes a concentric positioning ring disposed on the base 10. This positioning ring can be a protruding retaining ring or a groove, used to engage the bottom edge of the ceramic cover 21, ensuring that the ceramic cover 21 is strictly coaxial with the base 10 and preventing displacement during testing.
[0029] The heating plate 23 is located inside the ceramic cover 21 (inside the inner wall or at the bottom) and is controlled by a microcomputer. The function of the heating plate 23 is to simulate the background heat generated inside the cavity due to plasma bombardment or chemical reaction during semiconductor processing.
[0030] The thermal control component is used to achieve active adjustment of the test temperature.
[0031] The cooling circulation unit 3 is located inside the ceramic cover 21. This unit includes a fluid channel and a flow control valve. The fluid channel can be designed below the heating plate 23 or independently located inside the ceramic cover 21. During testing, a cooling airflow (such as compressed air) or a cooling liquid flow (such as circulating water) can be introduced into the fluid channel to remove the heat accumulated inside the ceramic cover 21 during the simulated cooling process, thus assisting in the cooling process of the simulated chamber.
[0032] The detection component 40 is used for real-time data acquisition. It includes multiple temperature probes 41 embedded in the surface of the ceramic cover 21. The probes are preferably K-type thermocouples, which have the advantages of fast response and wide temperature measurement range. The data acquired by the probes is transmitted to the data acquisition and processing unit connected to the multi-channel temperature sensing system to generate a visualized temperature-time curve.
[0033] Based on the above-described device, this embodiment also provides a method of use, including the following steps: Step S1: Assembly step. Wind and install the coil 50 on the outer side of the ceramic cover 21 of the simulated load component 20, ensuring that the coil fits closely to the ceramic surface; connect the coil to the power supply and an external chiller.
[0034] Step S2: Simulated heating step. Start the internal heating plate 23, set the target temperature, and heat the ceramic cover 21. At the same time, power on the coil 50 to be tested. At this time, the ceramic cover 21 is subjected to the combined effects of the radiant heat from the internal heating plate 23 and the Joule heat from the external coil. Use the detection component 40 to record the temperature rise curve during this process, and observe the heating efficiency of the coil and the temperature uniformity on the surface of the ceramic cover 21.
[0035] Step S3: Simulated cooling step. When the test index is reached, turn off the power supply of the internal heating plate 23. Start the cooling circulation unit 3 (introduce cooling gas or liquid). At this time, the heat is removed through the contact heat conduction of the side coil and the cooling circulation unit 3. Record the cooling curve and evaluate the heat dissipation performance of the side coil and the system.
[0036] Step S4: Data verification step. Compare the temperature-time curve, temperature rise and fall rate and other data collected during the test with the historical thermal model data of the standard process chamber under the same working conditions. If the data match, it proves that the performance of the side coil is qualified; if the deviation is large, it is necessary to check whether there are problems such as inter-turn short circuit, poor contact or blockage of the cooling flow channel in the coil.
[0037] Obviously, the above embodiments of the present invention are merely examples for clearly explaining the present invention, and are not intended to limit the implementation manners of the present invention. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all implementation manners here. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the claims of the present invention.
Claims
1. A device for testing the temperature change of a side coil for semiconductor applications, characterized in that, The utility model relates to a simulation device for side coil, comprising: a base for providing stable support; a simulation load assembly vertically installed on the base for winding the side coil to be tested, the simulation load assembly comprising a heating disc controlled by a microcomputer, a ceramic cover and a positioning mechanism for keeping the ceramic cover coaxial with the base, the inner wall of the ceramic cover having a preset heat capacity to simulate the characteristics of a process chamber, the positioning mechanism comprising a concentric positioning ring arranged on the base; a thermal regulation assembly comprising a cooling circulation unit arranged inside the ceramic cover for regulating temperature; a detection assembly comprising a plurality of temperature probes embedded in the surface of the ceramic cover for recording temperature data during the test.
2. The temperature change testing device for a side coil of a semiconductor according to claim 1, characterized by The base is made of alloy aluminum, and the ceramic cover is made of aluminum oxide.
3. The temperature change testing device for a side coil of a semiconductor according to claim 1, characterized by The thickness of the ceramic cover is between 5mm and 10mm.
4. The temperature change testing device for a side coil of a semiconductor according to claim 1, characterized by The cooling circulation unit comprises a fluid channel and a flow control valve. Cooling gas or cooling liquid can be introduced into the fluid channel.
5. The temperature change testing device for a side coil of a semiconductor according to claim 1, characterized by The heating disc is arranged inside or at the bottom of the inner wall of the ceramic cover for simulating plasma or reaction heat in the process chamber.
6. The temperature variation testing device for a side coil of a semiconductor according to claim 1, characterized by The detection assembly comprises a data acquisition and processing unit, temperature probes and K-type thermocouples.
7. A method of using a temperature change testing apparatus for a side coil for a semiconductor as claimed in any one of claims 1 to 6, characterized by, The utility model comprises the following steps: an assembly step of winding the side coil to be tested outside the ceramic cover of the simulation load assembly; a simulation heating step of heating the inside of the ceramic cover by starting the heating disc and electrifying the side coil to be tested, and recording the temperature rise curve by the detection assembly; a simulation cooling step of cooling the side coil to be tested by thermal conduction through the side coil and the inside of the ceramic cover by closing the heating disc and starting the cooling circulation unit; a data verification step of comparing the collected temperature-time curve with the thermal model data of the standard process chamber.