Exposure device and exposure method

Abstract

The invention provides an exposure device and an exposure method.The exposure device comprises an illumination module, a mask table and an objective lens module which are sequentially arranged along a light path, and further comprises a shading mechanism; the shading mechanism is arranged between the mask table and the illumination module along a light path, or is arranged between the mask table and the objective lens module; the shading mechanism is provided with an opening, the size of the opening can be adjusted, and the opening is used for being coaxially arranged with an exposure pattern area of a photomask along a light path. According to the configuration, through the arrangement of the shading mechanism, extension of trailing light at the edge of a view field is shortened, and the influence on areas outside the current exposure pattern area is reduced, so that the isolation effect is improved, the special technological process requirements are met, and particularly the penumbra control capability is effectively improved.

Description

Technical Field

[0001] This invention relates to the field of photolithography control technology, and in particular to an exposure apparatus and an exposure method. Background Technology

[0002] In some process technologies, the actual exposure field of view is much smaller than the designed field of view of the exposure machine. To improve the utilization rate of the photomask, multiple exposure pattern areas are often designed within a single field of view to save on photomask costs. During photomask design, multiple exposure pattern areas are shielded by blocking edges to avoid the influence of penumbra in the optical path. The blocking edge can be, for example, a 4mm wide chromium layer. For most process technologies, the blocking edge can effectively block penumbra, preventing adjacent exposure pattern areas from being exposed.

[0003] However, due to the diversity and complexity of the manufacturing process, in some scenarios, a 4mm wide chromium layer shielding edge cannot meet the requirements of certain special processes and cannot completely isolate adjacent exposure pattern areas, resulting in the exposure of adjacent exposure pattern areas. Summary of the Invention

[0004] The purpose of this invention is to provide an exposure device and an exposure method to solve the problem that when an exposure pattern area is exposed, the area outside the current exposure pattern area cannot be completely blocked and is exposed.

[0005] To solve the above-mentioned technical problems, the present invention provides an exposure device, which includes: an illumination module, a mask stage and an objective lens module arranged sequentially along the optical path, and also includes a light-shielding mechanism;

[0006] The light-shielding mechanism is disposed between the mask stage and the illumination module along the optical path, or between the mask stage and the objective lens module;

[0007] The light-shielding mechanism has an opening, the size of which is adjustable, and the opening is coaxially arranged with the exposure pattern area of ​​the photomask along the optical path.

[0008] Optionally, the size of the opening can be adjusted to ensure that the size of the opening is larger than the size of the exposure pattern area and smaller than the outer edge size of the occlusion edge.

[0009] Optionally, the size of the opening is adjusted to be no less than the sum of the size of the exposure pattern area and 2 * penumbra width; and / or, the size of the opening is adjusted to be less than the difference between the outer edge size of the occlusion edge and 2 * penumbra width.

[0010] Optionally, the light-shielding mechanism includes two X-direction light-shielding leaves and two Y-direction light-shielding leaves; the X-direction light-shielding leaves are movably arranged along the X direction, and the Y-direction light-shielding leaves are movably arranged along the Y direction to adjust the size or position of the opening.

[0011] Optionally, the two X-direction shading leaves and / or the two Y-direction shading leaves are driven to move towards each other or away from each other synchronously and of the same size.

[0012] Optionally, the minimum size of the opening is 4mm*4mm.

[0013] Optionally, after adjusting the size of the opening, the X-direction position B of the inner edges of the two X-direction shading leaves... X I X ±(W) X / 2+d / 2), the Y-direction position B of the inner edges of the two Y-direction shading leaves Y I Y ±(W) Y / 2+d / 2); where I X I is the center position of the exposure pattern area in the X direction. Y W is the center position in the Y direction of the exposure pattern area. X W is the X-axis dimension of the exposed pattern area. Y d is the Y-axis dimension of the exposure pattern area, and d / 2 is the penumbra width.

[0014] Optionally, the light-shielding mechanism includes two X-axis driving mechanisms and two Y-axis driving mechanisms; each X-axis driving mechanism drives one X-axis light-shielding leaf along the X-axis, and each Y-axis driving mechanism drives one Y-axis light-shielding leaf along the Y-axis.

[0015] Optionally, the photomask has a plurality of the exposure pattern areas, and the opening of the light-shielding mechanism is configured to sequentially align with the plurality of exposure pattern areas to sequentially expose the plurality of exposure pattern areas.

[0016] Optionally, the area of ​​the light-blocking mechanism, excluding the opening, is used to block the area of ​​the exposure field of view that corresponds to the area outside the current exposure pattern area.

[0017] To address the aforementioned technical problems, the present invention also provides an exposure method, comprising:

[0018] The adjustment parameters of the light-shielding mechanism are defined according to the center position and size of the exposure pattern area;

[0019] Issue prescriptions;

[0020] According to the adjustment parameters in the prescription, the size of the opening of the light-shielding mechanism is adjusted to expose the current exposure pattern area.

[0021] Optionally, when multiple exposure pattern areas are included, the multiple exposure pattern areas are distinguished by different IDs, and their respective adjustment parameters are defined;

[0022] After the exposure of the current ID's exposure pattern area is completed, the size of the opening is adjusted according to the adjustment parameters corresponding to the exposure pattern area of ​​the next ID, and then the exposure pattern area of ​​the next ID is exposed.

[0023] In summary, in the exposure apparatus and exposure method provided by the present invention, the exposure apparatus includes an illumination module, a mask stage, and an objective lens module arranged sequentially along the optical path, and also includes a light-shielding mechanism; the light-shielding mechanism is arranged along the optical path between the mask stage and the illumination module, or between the mask stage and the objective lens module; the light-shielding mechanism has an opening, the size of which is adjustable, and the opening is used to be coaxially arranged with the exposure pattern area of ​​the photomask along the optical path.

[0024] This configuration, through the setting of the light-blocking mechanism, shortens the extension of the trailing light at the edge of the field of view, reduces the impact on areas outside the current exposure pattern area, thereby improving the isolation effect, meeting the requirements of special process technology, and in particular, effectively improving the penumbra control capability. Attached Figure Description

[0025] Those skilled in the art will understand that the accompanying drawings are provided to better understand the invention and do not constitute any limitation on the scope of the invention.

[0026] Figure 1 This is a schematic diagram of the penumbra according to an embodiment of the present invention.

[0027] Figure 2 This is a schematic diagram of an embodiment of the present invention in which multiple exposure pattern areas are designed within a single field of view.

[0028] Figure 3 This is a schematic diagram of an exposure apparatus according to an embodiment of the present invention, wherein the light-shielding mechanism is located between the mask stage and the illumination module.

[0029] Figure 4 This is a schematic diagram of an exposure apparatus according to another embodiment of the present invention, wherein the light-shielding mechanism is located between the mask stage and the objective lens module.

[0030] Figure 5 This is a schematic diagram illustrating the working principle of the light-shielding mechanism in an embodiment of the present invention.

[0031] Figure 6 This is a schematic diagram showing the positional relationship between the opening, the exposure pattern area, and the blocking edge in an embodiment of the present invention.

[0032] Figure 7 This is a schematic diagram of the light-shielding mechanism according to an embodiment of the present invention.

[0033] Figure 8 This is a schematic diagram of the X-direction shading leaf according to an embodiment of the present invention.

[0034] Figure 9This is a schematic diagram of the Y-direction shading leaf according to an embodiment of the present invention.

[0035] Figure 10 This is a schematic diagram of the light leakage length of an existing exposure device.

[0036] Figure 11 This is a schematic diagram of the light leakage length of the light-shielding mechanism according to an embodiment of the present invention.

[0037] In the attached figures: 1-shielding mechanism; 10-opening; 11-X-direction shielding leaf; 12-Y-direction shielding leaf; 13-X-direction drive mechanism; 14-Y-direction drive mechanism; 2-mask stage; 20-exposure pattern area; 21-shielding edge; 3-illumination module; 4-objective lens module; 5-substrate. Detailed Implementation

[0038] To make the objectives, advantages, and features of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to facilitate and clarify the explanation of the embodiments of this invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and may sometimes use different scales.

[0039] As used in this invention, the singular forms “a,” “an,” “one,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature; “one end” and “the other end,” and “proximal end” and “distal end” generally refer to two corresponding parts, which include not only endpoints. Furthermore, the terms "installed," "connected," and "attached," as used in this invention, and the term "set" on one element from another, should be interpreted broadly. They generally only indicate a connection, coupling, cooperation, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. They should not be construed as indicating or implying a spatial relationship between the two elements, meaning one element can be located inside, outside, above, below, or to one side of another element, unless otherwise explicitly stated. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances. Additionally, directional terms such as above, below, up, down, upward, downward, left, and right are used relative to exemplary embodiments as shown in the figures, with upward or upper directions pointing towards the top of the corresponding figure, and downward or lower directions pointing towards the bottom of the corresponding figure.

[0040] The purpose of this invention is to provide an exposure apparatus to solve the problem that when an exposure pattern area is being exposed, areas outside the currently exposed pattern area are not completely blocked and are exposed. The following description refers to the accompanying drawings.

[0041] Please refer to Figure 1 At the photomask surface, the change in light intensity I(x) at the edge of the illumination field of view does not decrease abruptly from 100% of the maximum light intensity Imax to 0%, but rather exhibits a gradual range. This is an inherent physical phenomenon of the optical path system. The illuminated area where the light intensity ranges from 97% to 3% of the maximum light intensity is called the penumbra, and its width d / 2 is the penumbra width. The penumbra enables photoresist imaging; therefore, in some scenarios, additional light-blocking mechanisms are added to the optical path to block the penumbra. During photomask fabrication, a chromium layer is often used to block the optical path to avoid or reduce the impact of the penumbra on imaging.

[0042] When only a single exposure pattern area exists within a single field of view, placing a chromium layer around the perimeter of the photomask corresponding to that area effectively avoids the influence of penumbra on the imaging. However, when multiple exposure pattern areas are set within a single field of view, adjacent exposure pattern areas must be isolated by a chromium layer of a certain width (e.g., 4 mm). For example... Figure 2 In the example shown, the photomask contains three exposure pattern areas: shot1, shot2, and shot3. When shot3 is exposed, the patterns of shot2 and shot1 may also be exposed and imaged.

[0043] The inventors discovered that the exposure of areas outside the current exposure pattern area (such as adjacent exposure pattern areas) is caused by light within the range of 3% to 0% of the maximum intensity outside the penumbra at the edge of the illumination field of view. For ease of description, this range of light outside the penumbra is referred to as trailing light. The penumbra width d / 2 is generally determined by the performance of the exposure device itself, and can be as small as 2mm. A 4mm wide chromium layer can effectively shield the penumbra, but it is difficult to effectively shield the trailing light further out of the penumbra. However, the light intensity does not stop abruptly when it drops to 3%. Between 3% and 0%, there is still an energy-attenuating "trailing" region. This region is an inherent physical phenomenon of the optical system and cannot be completely eliminated. When these trailing lights expose the target exposure pattern area, they exceed the shielding range of the chromium layer and extend into areas outside the current exposure pattern area (such as adjacent exposure pattern areas). Although the intensity of this trailing light is very weak, it is still sufficient to cause the photoresist to react for some processes that are very sensitive to photoresist or special processes (such as complex processes in the R&D department), thereby forming unwanted blurred patterns from adjacent exposure pattern areas, resulting in exposure or partial exposure.

[0044] Based on the above research, please refer to Figures 3 to 5 This invention provides an exposure apparatus comprising: an illumination module 3, a mask stage 2, and an objective lens module 4 arranged sequentially along an optical path. A photomask is placed on the mask stage 2. The exposure apparatus further includes a light-shielding mechanism 1, which is disposed along the optical path between the mask stage 2 and the illumination module 3, or between the mask stage 2 and the objective lens module 4. The light-shielding mechanism 1 has an opening 10, the size of which is adjustable, and the opening 10 is coaxially arranged with the exposure pattern area 20 of the photomask along the optical path. The specific structure and exposure principle of components such as the illumination module 3, the mask stage 2, and the objective lens module 4 can be found in existing technology and will not be described in detail here.

[0045] The size of the exposure pattern area 20 is determined by the product design, and its outline is defined by the inner edge of the masking edge 21. The masking edge 21 may be a chrome layer, and its width can be set as needed, for example, 4 mm. In some embodiments, such as... Figure 3 As shown, the light-shielding mechanism 1 is positioned along the optical path between the mask stage 2 and the illumination module 3, above the photomask. Preferably, the distance from the upper surface of the photomask is no more than 7mm, and sufficient space must be reserved for the photomask's transport operation to avoid interference. The light emitted from the illumination module 3 passes sequentially through the light-shielding mechanism 1, the mask stage 2, and the objective lens module 4, finally reaching the substrate 5 to achieve exposure. In other embodiments, such as... Figure 4 As shown, the light-shielding mechanism 1 is disposed along the optical path between the mask stage 2 and the objective lens module 4, located below the photomask.

[0046] Please refer to Figure 6 The size of the opening 10 of the light-shielding mechanism 1 is adjustable to ensure that the size of the opening 10 is larger than the size of the exposure pattern area 20 and smaller than the outer edge size of the blocking edge 21. Figure 3 The example shown illustrates this, where the size of the opening 10 is between the size of the exposure pattern area 20 and the outer edge size of the blocking edge 21. Light from the illumination module 3 is first restricted by the light-blocking mechanism 1, forming an opening 10 only slightly larger than the target exposure pattern area 20. This strictly confines the light from the illumination module 3 to the vicinity of the target exposure pattern area 20, effectively blocking trailing light far from the target exposure pattern area 20. The attenuation process of light intensity from 3% to 0% is forced to occur on the light-blocking mechanism 1. This means that upon reaching the surface of the photomask, the boundary of the effective light intensity is greatly tightened, and the trailing light that would originally extend to the adjacent exposure pattern area 20 is cut off at its source. Therefore, by setting up the light-blocking mechanism 1, the penumbra control capability is effectively improved, the extension of trailing light at the edge of the field of view is shortened, and the impact on adjacent exposure pattern areas 20 is reduced, thereby improving the isolation effect and meeting the requirements of special process technologies. Figure 4 When the light-shielding mechanism 1 shown is located below the mask stage 2, its principle is similar, and it can also achieve the effect of shielding the trailing light.

[0047] Preferably, the dimensions of the opening 10, the exposure pattern area 20, and the outer edge of the blocking edge 21 all include the X-direction dimension ( Figure 6 The dimensions in the horizontal direction and the Y direction are (in the middle) and (in the Y direction). Figure 6 (The middle part is vertical). The outer edges of the opening 10, the exposure pattern area 20, and the blocking edge 21 are preferably rectangular. By comparing the dimensions of the opening 10, the exposure pattern area 20, and the outer edge dimensions of the blocking edge 21, their respective X-axis and Y-axis dimensions can be compared.

[0048] Preferably, the size of the opening 10 needs to be adjusted to be no less than the sum of the size of the exposure pattern area 20 and 2 * penumbra width d / 2, and both the X-axis and Y-axis dimensions must be satisfied. Furthermore, the geometric center of the opening 10 overlaps with that of the exposure pattern area 20. The core task of the light-shielding mechanism 1 is to block trailing light, ensuring the integrity of the imaging area and the necessary penumbra area, and ensuring that the entire range of the target exposure pattern area 20 receives complete illumination. Based on the preceding analysis, it is known that the existence of a penumbra is an inherent physical phenomenon of the optical system. When the light from the illumination module 3 illuminates the edge of the opening 10 of the light-shielding mechanism 1, a penumbra will also exist. This penumbra, upon reaching the photomask, can be blocked by the blocking edge 21, forming a sharp pattern edge. If the size of the opening 10 is smaller than the sum of the size of the exposure pattern area 20 and 2 * penumbra width d / 2, then the penumbra formed by the edge of the opening 10 of the light-shielding mechanism 1 will cut into the inner edge of the blocking edge 21, cutting into the current target exposure pattern area 20, affecting the exposure quality.

[0049] Preferably, the size of the opening 10 needs to be adjusted to be smaller than the difference between the outer edge size of the blocking edge 21 and 2 * penumbra width d / 2, and both the X-axis and Y-axis dimensions must meet this requirement. Furthermore, the opening 10 overlaps with the geometric center of the exposure pattern area 20. Based on the same principle, if the size of the opening 10 is too large, exceeding the difference between the outer edge size of the blocking edge 21 and 2 * penumbra width d / 2, it means the edge of the opening 10 is relatively close to the outer edge of the blocking edge 21. In this case, the penumbra formed by the edge of the opening 10 of the light-blocking mechanism 1 will cut into the adjacent exposure pattern area 20, beyond the outer edge of the blocking edge 21, causing incorrect exposure of the adjacent exposure pattern area 20.

[0050] Taking the X-axis dimension of the exposure pattern area 20 as WX, the X-axis dimension of the opening 10 as A, and the X-axis dimension of the outer edge of the occlusion edge 21 as M as an example, the following condition is satisfied: WX / 2 + d / 2 ≤ A / 2 < M / 2 - d / 2. The relationship of the Y-axis dimension of the opening 10 can be understood by referring to the X-axis dimension.

[0051] In a preferred example, the size of the opening 10 is the sum of the size of the exposure pattern area 20 and 2 * penumbra width d / 2, and both the X-axis and Y-axis dimensions must be satisfied.

[0052] Preferably, the area of ​​the light-shielding mechanism 1, excluding the opening 10, is used to shield the area of ​​the exposure field of view that corresponds to the current exposure pattern area 20.

[0053] In a preferred example, the width of the shading edge 21 is 4mm and the penumbra width d / 2 is 2mm. Then the edge of the opening 10 is located at the center of the width direction of the shading edge 21. That is, the size of the opening 10 is 2mm larger than the inner edge of the shading edge 21 and 2mm smaller than the outer edge of the shading edge 21.

[0054] Please refer to Figures 7 to 9 Optionally, the light-blocking mechanism 1 includes two X-direction light-blocking leaves 11 and two Y-direction light-blocking leaves 12; the X-direction light-blocking leaves 11 are movably arranged along the X direction, and the Y-direction light-blocking leaves 12 are movably arranged along the Y direction to adjust the size or position of the opening 10.

[0055] In some embodiments, the size or position of the opening 10 is adjustable to accommodate the needs of various exposure pattern areas 20. The size or position of the opening 10 can be adjusted by moving the two X-direction shading leaves 11 and the two Y-direction shading leaves 12 in their respective directions. Preferably, the minimum size of the opening 10 is 4mm x 4mm.

[0056] Preferably, the light-shielding mechanism 1 includes two X-axis drive mechanisms 13 and two Y-axis drive mechanisms 14; each X-axis drive mechanism 13 drives one X-axis light-shielding leaf 11 along the X-axis, and each Y-axis drive mechanism 14 drives one Y-axis light-shielding leaf 12 along the Y-axis. That is, the entire light-shielding mechanism 1 is a four-axis controllable device.

[0057] Optionally, the two X-direction light-blocking leaves 11 and / or the two Y-direction light-blocking leaves 12 are driven synchronously and of the same size to move towards or away from each other. Here, the towards-and-away movement or the back-and-forth movement is a reciprocating linear motion. That is, when the two X-direction light-blocking leaves 11 and / or the two Y-direction light-blocking leaves 12 move, they satisfy the following: the two X-direction light-blocking leaves 11 move the same distance relative to the center of the opening 10, and the two Y-direction light-blocking leaves 12 move the same distance relative to the center of the opening 10. In some embodiments, the X-direction drive mechanism 13 or the Y-direction drive mechanism 14 can be a servo motor, a voice coil motor, etc. In some embodiments, the light-blocking mechanism 1 may also include only one X-direction drive mechanism 13 and one Y-direction drive mechanism 14; the X-direction drive mechanism 13 drives the two X-direction light-blocking leaves 11 along the X direction, and the Y-direction drive mechanism 14 drives the two Y-direction light-blocking leaves 12 along the Y direction.

[0058] More preferably, the light-shielding mechanism 1 also includes components such as an absolute encoder (not shown), which is used to provide feedback on the position information of each drive mechanism, thereby enabling the X-direction light-shielding leaf 11 and the Y-direction light-shielding leaf 12 to reciprocate linearly along the corresponding directions at a certain speed and acceleration, with a motion position accuracy of 0.1 mm. The specific structure and drive control principle of the X-direction drive mechanism 13, the Y-direction drive mechanism 14 and the absolute encoder can be found in the prior art and will not be described in detail here.

[0059] After determining the target exposure pattern area 20, the light-blocking mechanism 1 can set the center and size of the opening 10 according to the center position and size of the exposure pattern area 20. The following is a preferred embodiment: in this case, the size of the opening 10 is the sum of the size of the exposure pattern area 20 and 2 * penumbra width d / 2, with the X-direction center position of the exposure pattern area 20 as I. X The center position in the Y direction is I. Y The X-axis dimension of the exposure pattern area 20 is W. X The Y-axis dimension is W Y For example, taking the penumbra width d / 2 as an example, after adjusting the size of the opening 10, the X-direction position B of the inner edge of the two X-direction shading leaves 11 is... X I X ±(W) X / 2+d / 2), the Y-direction position B of the inner edge of the two Y-direction shading leaves 12 Y I Y ±(W) Y / 2+d / 2). It's easy to understand; B here... X B Y All of these are target locations.

[0060] That is, the X-position B of an X-direction shading leaf 11. X =I X -(W) X / 2+d / 2);

[0061] Another X-direction shading leaf 11, X-direction position B X =I X +(W) X / 2+d / 2);

[0062] Y-position B of a Y-direction shading leaf 12 Y =I Y +(W) Y / 2+d / 2);

[0063] Another Y-direction shading leaf 12, Y-direction position B Y =I Y -(W) Y / 2+d / 2).

[0064] Preferably, the photomask has a plurality of exposure pattern areas 20, and the opening 10 of the light-shielding mechanism 1 is configured to sequentially align with the plurality of exposure pattern areas 20 for sequential exposure of the plurality of exposure pattern areas 20. Please refer to the reference. Figure 1 When the photomask has multiple exposure pattern areas 20, the exposure apparatus provided in this embodiment preferably exposes the multiple exposure pattern areas 20 sequentially.

[0065] Based on the exposure apparatus described above, embodiments of the present invention provide an exposure method, the operation flow of which is illustrated below:

[0066] Step S1, Recipe Editing: Define the adjustment parameters of the light-shielding mechanism according to the center position and size of the exposure pattern area 20; optionally, when the photomask contains multiple exposure pattern areas 20, distinguish the multiple exposure pattern areas 20 by different IDs (such as ID1, ID2, ID3), and define their respective adjustment parameters I according to the center position and size of the multiple exposure pattern areas 20. X I Y W X W Y .

[0067] Step S2: Issue the prescription.

[0068] Step S3: According to the parameters in the prescription, adjust the size of the opening 10 of the light-shielding mechanism 1, thereby exposing the current exposure pattern area 20. For example, the light-shielding mechanism 1 is based on the I defined by ID1. X I Y W X W Y Adjust the positions of the two X-direction shading leaves 11 and the two Y-direction shading leaves 12 by B X B Y Exposure ID1. When there are multiple exposure pattern areas 20, after the exposure pattern area 20 of the current ID is completed, the size of the opening 10 is adjusted according to the adjustment parameter corresponding to the exposure pattern area 20 of the next ID, and then the exposure pattern area 20 of the next ID is exposed. For example, after ID1 is exposed, according to the I defined by ID2 X I Y W X W Y Adjust the positions of the two X-direction shading leaves 11 and the two Y-direction shading leaves 12 by B X B Y Expose ID2. Continue in this manner until all exposure areas 20 are completed.

[0069] Please refer to Figure 10 and Figure 11 The diagrams show the light leakage length of the existing exposure apparatus and the light leakage length of the light-shielding mechanism 1 provided in this embodiment, respectively. Figure 10 and Figure 11 The table lists the exposure conditions of the wafer 5 as captured by a microscope at a certain distance from the edge of the target exposure pattern area 20. Figure 10It can be seen that the existing exposure device still exposes the pattern at a distance of 11mm from the edge of the target exposure pattern area 20, proving that the light leakage distance exceeds 11mm and the light-blocking effect is poor. However, with the light-blocking mechanism 1 of this embodiment, the pattern at a distance of 2.5mm from the edge of the target exposure pattern area 20 is basically not exposed. Combined with the 4mm wide blocking edge 21 of the photomask, it can completely isolate the trailing light.

[0070] In summary, the exposure apparatus provided by this invention includes an illumination module, a mask stage, and an objective lens module arranged sequentially along the optical path, and also includes a light-shielding mechanism. The light-shielding mechanism is disposed along the optical path between the mask stage and the illumination module, or between the mask stage and the objective lens module. The light-shielding mechanism has an opening, the size of which is adjustable, and the opening is coaxially arranged with the exposure pattern area of ​​the photomask along the optical path. This configuration, through the setting of the light-shielding mechanism, shortens the extension of the trailing light at the edge of the field of view, reduces the impact on areas outside the current exposure pattern area, thereby improving the isolation effect, meeting the requirements of special process technologies, and particularly effectively improving the penumbra control capability.

[0071] It should be noted that the above embodiments can be combined with each other. The above description is only a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the present invention.

Claims

1. An exposure apparatus, characterized in that, include: The illumination module, mask stage, and objective lens module are arranged sequentially along the optical path, and a light-shielding mechanism is also included. The light-shielding mechanism is disposed between the mask stage and the illumination module along the optical path, or between the mask stage and the objective lens module; The light-shielding mechanism has an opening, the size of which is adjustable, and the opening is coaxially arranged with the exposure pattern area of ​​the photomask along the optical path.

2. The exposure apparatus according to claim 1, characterized in that, Adjust the size of the opening to ensure that the size of the opening is larger than the size of the exposure pattern area and smaller than the outer edge size of the occlusion edge.

3. The exposure apparatus according to claim 2, characterized in that, The size of the opening is adjusted to be no less than the sum of the size of the exposure pattern area and 2 * penumbra width; and / or; the size of the opening is adjusted to be less than the difference between the outer edge size of the occlusion edge and 2 * penumbra width.

4. The exposure apparatus according to claim 1, characterized in that, The light-blocking mechanism includes two X-direction light-blocking leaves and two Y-direction light-blocking leaves; the X-direction light-blocking leaves are movably arranged along the X direction, and the Y-direction light-blocking leaves are movably arranged along the Y direction to adjust the size or position of the opening.

5. The exposure apparatus according to claim 4, characterized in that, The two X-direction shading leaves and / or the two Y-direction shading leaves are driven synchronously and of the same size to move toward each other or toward each other.

6. The exposure apparatus according to claim 4, characterized in that, The minimum size of the opening is 4mm*4mm.

7. The exposure apparatus according to claim 4, characterized in that, After adjusting the size of the opening, the X-direction position B of the inner edges of the two X-direction shading leaves... X I X ±(W) X / 2+d / 2), the Y-direction position B of the inner edges of the two Y-direction shading leaves Y I Y ±(W) Y / 2+d / 2); where I X I is the center position of the exposure pattern area in the X direction. Y W is the center position in the Y direction of the exposure pattern area. X W is the X-axis dimension of the exposed pattern area. Y d is the Y-axis dimension of the exposure pattern area, and d / 2 is the penumbra width.

8. The exposure apparatus according to claim 4, characterized in that, The light-shielding mechanism includes two X-axis driving mechanisms and two Y-axis driving mechanisms; each X-axis driving mechanism drives one X-axis light-shielding leaf along the X-axis, and each Y-axis driving mechanism drives one Y-axis light-shielding leaf along the Y-axis.

9. The exposure apparatus according to claim 1, characterized in that, The photomask has a plurality of exposure pattern areas, and the opening of the light-shielding mechanism is configured to sequentially align with the plurality of exposure pattern areas to sequentially expose the plurality of exposure pattern areas.

10. The exposure apparatus according to claim 1, characterized in that, The area of ​​the light-blocking mechanism, excluding the opening, is used to block the area outside the current exposure pattern area of ​​the exposure field of view.

11. An exposure method, characterized in that, include: The adjustment parameters of the light-shielding mechanism are defined according to the center position and size of the exposure pattern area; Issue prescriptions; According to the adjustment parameters in the prescription, the size of the opening of the light-shielding mechanism is adjusted to expose the current exposure pattern area.

12. The exposure method according to claim 11, characterized in that, When multiple exposure pattern areas are included, the multiple exposure pattern areas are distinguished by different IDs, and their respective adjustment parameters are defined; After the exposure of the current ID's exposure pattern area is completed, the size of the opening is adjusted according to the adjustment parameters corresponding to the exposure pattern area of ​​the next ID, and then the exposure pattern area of ​​the next ID is exposed.

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