Radio frequency equipment and manufacturing method thereof

Abstract

The invention relates to a radio frequency device and a manufacturing method thereof. A radio frequency (RF) device includes at least one RF chip including a local oscillator configured to generate an RF signal. The RF device also includes an RF signal path coupling the output of the at least one RF chip and the input of the at least one RF chip, where the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip into the input of the at least one RF chip. The RF device also includes a processing unit coupled to an input of the at least one RF chip and configured to perform at least one of testing, monitoring or calibration of the at least one RF chip in a first mode based on the generated RF signal.

Description

Technical Field

[0001] This disclosure relates to radio frequency (RF) devices and methods for manufacturing RF devices. Background Technology

[0002] A radar system may include one or more RF transceiver chips. However, a single RF transceiver chip may only include a limited number of virtual array elements. To meet the requirements of certain applications (such as autonomous driving), multiple RF transceiver chips may therefore be cascaded and synchronized as a single unit. Typically, the cascading of multiple RF transceivers is implemented on a printed circuit board, which may require a relatively large amount of space. Proper testing, monitoring, and calibration of the RF transceiver chips may be necessary to ensure proper operation of the radar system.

[0003] Manufacturers and developers of RF devices are constantly striving to improve their products. In this regard, it is expected that RF devices will offer improved performance, smaller size, and reduced costs. Additionally, it is expected that suitable methods for manufacturing such RF devices will be provided. Summary of the Invention

[0004] One aspect of this disclosure relates to an RF device. The RF device includes at least one RF chip, which includes a local oscillator configured to generate an RF signal. The RF device also includes an RF signal path coupled to the output and input of the at least one RF chip, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip to the input of the at least one RF chip. The RF device further includes a processing unit coupled to the input of the at least one RF chip and configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal.

[0005] Another aspect of this disclosure relates to an RF device. The RF device includes at least one RF chip, comprising a TX channel for transmitting RF signals and an RX channel for receiving RF signals. The RF device also includes an RF signal path coupled to the output of the TX channel and the input of the RX channel. The RF signal path is configured to feed RF signals from the output of the TX channel to the input of the RX channel.

[0006] Another aspect of this disclosure relates to a method for manufacturing an RF device. The method includes arranging at least one RF chip, the at least one RF chip including a local oscillator configured to generate an RF signal. The method further includes coupling the output of the at least one RF chip to the input of the at least one RF chip via an RF signal path, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip to the input of the at least one RF chip. The method further includes coupling a processing unit to the input of the at least one RF chip, wherein the processing unit is configured to perform at least one of testing, monitoring, and calibrating the at least one RF chip in a first mode based on the generated RF signal.

[0007] Another aspect of this disclosure relates to a method for manufacturing an RF device. The method includes arranging at least one RF chip, the at least one RF chip including a TX channel for transmitting RF signals and an RX channel for receiving RF signals. The method further includes coupling the output of the TX channel and the input of the RX channel through an RF signal path. The RF signal path is configured to feed RF signals from the output of the TX channel to the input of the RX channel.

[0008] Those skilled in the art will recognize the additional features and advantages upon reading the following detailed description and reviewing the accompanying drawings. Attached Figure Description

[0009] The present disclosure is illustrated in the accompanying drawings by way of example and in a non-limiting manner, wherein the same reference numerals refer to similar or identical elements. The elements in the drawings need not be proportional to each other. Features of the examples in the various illustrations may be combined unless they exclude each other.

[0010] Figure 1 A cross-sectional side view of the RF device 100 according to the present disclosure is schematically illustrated.

[0011] Figure 2 A top view of the RF device 200 according to the present disclosure is schematically illustrated.

[0012] Figure 3 A cross-sectional side view of the RF device 300 according to the present disclosure is schematically illustrated.

[0013] Figure 4 A cross-sectional side view of the RF device 400 according to the present disclosure is schematically illustrated.

[0014] Figure 5 A cross-sectional side view of the RF device 500 according to the present disclosure is schematically illustrated.

[0015] Figure 6 A top view of the RF device 600 according to the present disclosure is schematically illustrated.

[0016] Figure 7 A cross-sectional side view of the RF device 700 according to the present disclosure is schematically illustrated.

[0017] Figure 8 A cross-sectional side view of an RF device 800 according to the present disclosure is schematically illustrated.

[0018] Figure 9 A cross-sectional side view of the RF device 900 according to the present disclosure is schematically illustrated.

[0019] Figure 10 A flowchart illustrating a method for manufacturing an RF device according to the present disclosure is shown.

[0020] Figure 11 A flowchart illustrating a method for manufacturing an RF device according to the present disclosure is shown. Detailed Implementation

[0021] In the following detailed description, reference is made to the accompanying drawings, in which specific aspects of this disclosure may be practiced by way of illustration. Other aspects may be utilized, and structural or logical changes may be made without departing from the concept of this disclosure. Therefore, the following detailed description is not intended to be limiting, and the concept of this disclosure is defined by the appended claims.

[0022] Now for reference Figure 1The illustration shows an RF device 100 according to the present disclosure. The RF device 100 may include at least one RF chip 2 configured to provide or support at least one transmit (TX) channel for transmitting RF signals and at least one receive (RX) channel for receiving RF signals. In the illustrated example, a single RF chip 2 is shown, but it should be understood that the RF device 100 may include additional RF chips, the number of which may depend on the specific design of the RF device 100. The RF chip 2 may be made of any semiconductor material (such as, for example, silicon) or may include any semiconductor material (such as, for example, silicon). The RF chip 2 (or its electronic circuitry) may be configured to operate in a frequency range greater than about 1 GHz (greater than about 10 GHz in some examples). Therefore, the RF chip 2 may also be referred to as a radio frequency chip, a high-frequency chip, or a microwave frequency chip. More specifically, the RF chip 2 may be configured to operate in an RF range or microwave frequency range, which may range from about 1 GHz to about 1 THz, and more specifically from about 10 GHz to about 300 GHz. Microwave circuits may include, for example, microwave transmitters, microwave receivers, microwave transceivers, microwave sensors, microwave detectors, etc. The RF device according to this disclosure can be used in radar applications where the frequency of the RF signal can be modulated. The RF chip 2 may therefore also be referred to as a radar chip. In particular, the RF chip 2 may include or may correspond to an MMIC (monolithic microwave integrated circuit).

[0023] Radar microwave equipment can be used, for example, in automotive, industrial, military, and / or defense applications for distance and speed measurement systems. Automotive applications, for instance, may include advanced driver assistance systems, automatic vehicle cruise control systems, vehicle collision avoidance systems, etc. Such systems can operate within the microwave frequency range and can utilize FMCW (Frequency Modulated Continuous Wave) signals (e.g., in the 24 GHz, 76 GHz, or 79 GHz bands). The use of radar microwave systems can provide vehicles with consistent and efficient driving. Efficient driving can, for example, reduce fuel consumption, thereby reducing CO2 emissions and enabling energy savings. Furthermore, it can reduce wear on vehicle tires, brake discs, and brake pads, thus reducing fine dust pollution. As described herein, improved RF or radar systems can therefore contribute to green technology solutions, i.e., providing climate-friendly solutions that reduce energy consumption.

[0024] RF chip 2 may include at least one local oscillator (not shown) configured to generate a local oscillator RF signal. RF chip 2 may use the local oscillator RF signal for operations such as transmitting a signal or mixing with a received signal. For example, the local oscillator RF signal may be mixed with a received RF signal using a mixer to down-convert the frequency of the received RF signal to a more manageable range. Specifically, an incoming RF signal may be mixed with the local oscillator RF signal to generate an intermediate frequency (IF) signal. The local oscillator RF signal may be used to shift the frequency of a received RF signal to a frequency range that can be easily processed by the receiver and subsequent processing stage of RF device 100. The local oscillator RF signal may be or may include a millimeter-wave local oscillator. In some applications, the local oscillator RF signal may be or may include an FMCW signal, which includes multiple frequency ramps. The local oscillator RF signal may be based on a reference clock. In this regard, RF device 100 may include a crystal oscillator (not shown) configured to generate a reference clock and provide the reference clock to RF chip 2. Typically, the frequency of the RF signal generated by the local oscillator can be greater than the frequency of the reference clock. In a non-limiting and exemplary case, the reference clock can have a frequency of approximately 50 MHz.

[0025] In the illustrated example, RF device 100 may correspond to or may include a flip-chip package, but is not limited thereto. RF chip 2 may be mounted on the top surface of substrate 30. Substrate 30 may include a plurality of metal layers 4 (see L1 to L4) and a plurality of dielectric layers 6 disposed between the plurality of metal layers 4. The metal layers 4 and dielectric layers 6 may extend substantially in a direction parallel to the main surface of RF chip 2. Metal layers L2 and L3 may be electrically connected in the vertical direction via a plurality of via connections 8. Optionally, similar via connections may provide electrical connections in the vertical direction between metal layers L1 and L2 and between metal layers L3 and L4.

[0026] RF device 100 may include at least one substrate integrated waveguide (SIW) 10, specifically configured for transmitting millimeter-wave signals. SIW 10 may include metal layers L2 and L3, and a dielectric layer 6 disposed between metal layers L2 and L3. Additionally, SIW 10 may include a plurality of via connections 8 extending between metal layers L2 and L3. The via connections 8 may be arranged to form a via fence. SIW 10 may be formed by a dielectric layer 6 covered on both surfaces by metal layers L2 and L3. The dielectric layer 6 may embed the via connections 8, forming two parallel rows of metal vias that define the propagation area of ​​the RF signal (i.e., electromagnetic wave) transmitted via SIW 10. The propagating electromagnetic wave may be confined within the dielectric layer 6 by metal layers L2 and L3 on each of the two surfaces of the dielectric layer 6 and between the two rows of metal vias 8 connecting metal layers L2 and L3. In the illustrated example, SIW 10 may be configured to transmit electromagnetic waves in the lateral direction. It should be noted that the radar operation and / or transmission of RF signals from RF devices described herein are not limited to being provided via SIW. That is, in Figure 1 In the examples or any other embodiments described herein, the transmission of RF signals may also be provided by one or more transmit lines or any other suitable structure capable of transmitting RF signals.

[0027] RF device 100 may include an AFIP (Antenna Feed in Package). The AFIP may include a first transmitter coupled to an RF port of RF chip 2 to transmit RF signals between the RF port and a waveguide antenna (not shown), which may, for example, be disposed below the bottom surface of substrate 30. The transmitter of RF device 100 may be configured to couple signals from SIW 10 to a waveguide (such as, for example, an inflatable waveguide) outside RF device 100, and / or from an external waveguide to SIW 10. The transmitter may include at least one coupling element, for example, which may be formed in metal layer L3. For example, the coupling element may include or may correspond to one or more antennas (such as, for example, a patch antenna). In the illustrated example, the transmitter may be disposed substantially at the right end of SIW 10. The coupling of RF signals from SIW 10 to an external waveguide and / or vice versa is exemplarily indicated by bidirectional vertical arrows.

[0028] During operation of RF device 100, RF signals processed by RF chip 2 can be transmitted to a transmitter via SIW 10. In this context, RF device 100 may also include at least one planar transmission line (such as, for example, at least one coplanar waveguide CPW), which may be at least partially formed in metal layers L1 and / or L2 and can be configured to couple RF chip 2 and SIW 10. For example, RF signals can be coupled from the planar transmission line to SIW 10 via a slot antenna that may be formed in metal layer L2. The transmitter can then transmit the RF signals received from SIW 10 to, for example, a waveguide antenna. In a similar manner, RF device 100 can receive RF signals during operation, for example, by coupling RF signals from the waveguide antenna to the transmitter. The received RF signals can then be forwarded to RF chip 2 via SIW 10 and the planar transmission line.

[0029] RF device 100 may include at least one coupling element 12 configured to mechanically and / or electrically couple RF device 100 to an external component, such as, for example, a printed circuit board (PCB) (not shown). In the illustrated example, coupling element 12 may include a plurality of solder balls that may be disposed on the bottom surface of substrate 30 or may correspond to a plurality of solder balls that may be disposed on the bottom surface of substrate 30. Furthermore, RF device 100 may include an encapsulation material (or package) 14 in which the RF chip 2 and other components of RF device 100 may be embedded. RF device 100 may also be referred to as a package, semiconductor package, RF package, or semiconductor RF package. For example, encapsulation material 14 may include or be made of at least one of molding compounds, epoxy resins, imides, thermoplastics, thermosetting polymers, polymer blends, etc., and may be manufactured, for example, based on suitable molding techniques.

[0030] Now for reference Figure 2 This illustrates an RF device 200 according to the present disclosure. The RF device 200 may include... Figure 1 Some or all of the characteristics of the RF device 100. In some examples, Figure 2 Can be regarded as Figure 1A top (cross-sectional) view of RF device 100 is shown. In the illustrated example, RF device 200 may include RF chip 2, which provides an exemplary and non-limiting number of two TX channels TX1-TX2 and two RX channels RX1-RX2. However, it should be understood that RF chip 2 may include any number of additional TX and / or RX channels. In the illustrated example, the RF ports of the associated RF channels are indicated by dots, and small rounded squares surrounding the dots may indicate coupling structures (such as, for example, transmitters). The transmission of RF signals via the TX channel TX2 of RF device 200 is now described exemplary. The RF signal processed by RF chip 2 may be transmitted to SIW via a planar transmit line, which may be formed in metal layers L1 and / or L2. The RF signal may be coupled to the SIW defined by via-hole connections via a slot antenna (which may be formed in metal layer L2). The RF signal may be transmitted via the SIW to a transmitter (such as, for example, a patch antenna), which may be formed in metal layer L3. The transmitter can couple the RF signal output of RF device 200 to, for example, a waveguide antenna. Exemplary reception of RF signals via the RF channel of RF device 200 can be similar, and is now exemplarily described for RX channel RX1. The RF signal can be received at the transmitter (e.g., from the waveguide antenna) and can be transmitted to RF chip 2 via SIW. The RF signal can be coupled from SIW to a planar transmit line via a slot antenna and can then be transmitted to RF chip 2 via the planar transmit line.

[0031] from Figure 2 As can be seen, the RF device 200 may include an RF signal path 20 coupling the output and input of the same RF chip 2. That is, the RF signal path 20 can be configured to feed an RF signal from the output of the RF chip 2 to its input. Specifically, the RF signal may be, or may include, an RF signal generated by the local oscillator of the RF chip 2, as previously described. Figure 1 The above discussion. In the illustrated example, the RF signal of the TX channel TX1 can be fed into the RX channel RX2. That is, the TX channel TX1 is not used in a conventional sense for broadcasting RF signals (such as broadcasting them to a waveguide antenna, for example); instead, the RF signal is fed back into the RF chip 2 for further processing. In the illustrated case, the RF signal path 20 can include something similar to... Figure 1 SIW. Return to reference. Figure 1For example, the SIW can be arranged in a substrate 30 on which the RF chip 2 is disposed. However, it should be understood that in another example, the feedback of the RF signal from the output of the RF chip 2 to the input of the RF chip 2 can be provided in a different manner, as described in more detail below. It should be noted that the feedback of the RF signal described herein is not limited to being provided via the SIW. That is, as in Figure 2 The RF signal path 20 shown by the line in the diagram does not necessarily represent SIW. For example, in Figure 2 In the examples described herein or any other embodiment as described herein, feedback may also be provided by one or more transmit lines or any other suitable structure capable of transmitting RF signals.

[0032] RF devices 100 and 200 may include a processing unit (not shown) coupled to the input of RF chip 2, wherein a fed-back RF signal can be received. Coupling between the processing unit and RF chip 2 can be established via at least one of signal lines, planar transmit lines, waveguides, etc. For example, the processing unit may include or correspond to at least one of microcontrollers, digital signal processors, etc. The processing unit may be part of RF chip 2 or may correspond to a separate component. The processing unit may be configured to perform at least one of testing, monitoring, or calibrating RF chip 2 in a first mode based on the RF signal fed back to RF chip 2. In this regard, the processing unit may, for example, perform at least one of short-range leakage elimination, blocker elimination, target monitoring, functional safety checks, phase noise estimation, phase noise monitoring, etc. In particular, the first mode performed by the processing unit may be specifically different from the second mode used to synchronize at least one RF chip 2 based on a local oscillator RF signal described later.

[0033] In illustrative and non-limiting examples, at least one of short-range leakage cancellation or phase noise estimation can be performed based on the fed-back local oscillator RF signal. In radar systems, the total noise floor can limit target detection sensitivity and the accuracy of range estimation. Typically, additive noise from the channel may dominate the noise floor. However, in cases where an approaching target (such as, for example, a buffer) reflects radar waves with high amplitude, the phase noise of the transmitted carrier may dominate the noise floor. This can, in turn, degrade signal detection quality or even completely prevent the detection of targets with small radar cross-sections. In this respect, the term short-range leakage cancellation can refer to methods for estimating and canceling signal reflections from such approaching targets. Besides short-range leakage cancellation, phase noise estimation and phase noise monitoring are also important for radar systems.

[0034] In the context of short-range leakage cancellation and phase noise estimation, the RF device according to this disclosure may include a time delay element (not shown) that may be formed at least partially by the RF signal path 20. The time delay element may be configured to apply a delay to the fed-back RF signal to generate a delayed RF signal. The time delay element may include, or may correspond to, an artificial radar target configured to apply attenuation to the fed-back RF signal to generate an attenuated RF signal. The processing unit of the RF device 200 may then be configured to perform at least one of phase noise estimation or short-range leakage cancellation based on the delayed and attenuated RF signal simulating the effect of an approaching target. Those skilled in the art will be familiar with suitable algorithms or computational schemes for short-range leakage cancellation and phase noise estimation performed by the processing unit. It should be understood that the described short-range leakage cancellation and phase noise estimation may be performed by an RF device including a single RF chip, but may also be performed by an RF device including multiple RF chips (such as, for example, a cascaded RF system).

[0035] Now for reference Figure 3 This illustrates an RF device 300 according to the present disclosure. The RF device 300 may include some or all of the features of the RF devices previously described. The RF device 300 may include, for example, [features related to RF devices]. Figure 1 The RF device 300 is packaged similarly to the RF device 100 or RF package 34. In the illustrated exemplary side view, an exemplary number of two TX channels TX1, TX2 and two receive channels RX1, RX2 of the RF package 34 are shown. However, it should be understood that the RF device 300 may provide one or more additional TX channels and / or RX channels. The RF signals associated with the TX channels and RX channels can be transmitted and received by means of a transmitter, which may be arranged on the bottom surface of the RF package 34, as previously described. Figure 1 and Figure 2 As described. Note that the substrate 30 of the RF package 34 may contain one or more SIWs similar to the previous example, which is not illustrated for simplicity.

[0036] In the illustrated example, the RF package 34 may be mounted on the top surface of a printed circuit board (PCB) 22, which in some examples is considered part of an RF device 300. The RF device 300 may include a waveguide antenna 24 mounted on the bottom surface of the PCB 22. The waveguide antenna 24 may include a plurality of waveguides 26A to 26C formed inside the waveguide antenna 24. In the illustrated example, the waveguides 26A to 26C of the waveguide antenna 24 may include or correspond to inflated waveguides. The PCB 22 may include a plurality of openings 28A to 28D extending from the top surface of the PCB 22 to the bottom surface of the PCB 22. The openings 28A to 28D may be aligned with a transmitter disposed on the bottom surface of the RF package 34 and waveguides 26A to 26C formed in the waveguide antenna 24. During operation of RF device 300, RF signals can be received by waveguide 26A on the left and coupled to substrate 34 via a transmitter aligned with the left opening 28A (see RX1) of PCB 22. In a similar manner, RF signals to be transmitted can be coupled from a transmitter aligned with the right opening 28D (see TX2) of PCB 22 to waveguide 26C on the right.

[0037] Similar to Figure 2 For example, RF device 300 may include an RF signal path 20 coupling the output and input of RF chip 2, wherein RF signal path 20 may be configured to feed back an RF signal generated by a local oscillator of RF chip 2 from the output to the input of RF chip 2. In the illustrated example, the output of RF chip 2 may be associated with a TX channel TX1, while the input may be associated with an RX channel RX2 of RF chip 2. In the illustrated case, RF signal path 20 may include a waveguide 26B formed in waveguide antenna 24. The fed-back RF signal may be provided to a processing unit to perform at least one of testing, monitoring, or calibration of RF chip 2 in a first mode, as previously described, based on the fed-back RF signal.

[0038] Now for reference Figure 4The illustration shows another RF device 400 according to the present disclosure. RF device 400 may include some or all of the features of the RF devices previously described. In particular, RF device 400 may be at least partially similar to RF device 100 of the figure. Similar to the previous example, RF signals may be fed from the output of RF chip 2 to the input of RF chip 2. In the illustrated example, the RF chip 2 of RF device 400 may include a plurality of chip contacts 32 disposed on the bottom surface of RF chip 2 facing the top surface of substrate 30. Chip contacts 32 may include one or more inputs and one or more outputs of RF chip 2. RF chip 2 may include at least one dedicated local oscillator input (see LOin) and at least one dedicated local oscillator output (see LOout). RF signal path 20 may couple the output of RF chip 2 to the input of RF chip 2, wherein RF signal path 20 may be configured to feed RF signals from the output of RF chip 2 to the input of RF chip 2, similar to the previous example. More specifically, RF signal path 20 can be configured to feed the generated local oscillator RF signal from the local oscillator output (see LOout) back to the local oscillator input (see LOin). In the illustrated case, RF signal path 20 may include a planar emission line that may be disposed in or on the substrate 30. In one example, the planar emission line may be formed in metal layers L1 and / or L2 of the substrate 30.

[0039] The term "dedicated local oscillator input / output" can refer to the dedicated input / output of an RF chip used for transmitting and receiving local oscillator RF signals. In RF devices, these local oscillator RF signals can be used for synchronization purposes. For example, in an RF device comprising multiple RF chips (such as a cascaded RF device), the RF chips can be synchronized so that the cascaded RF system operates as a single RF system, where each of the RF channels has a predefined phase relationship with each other. To achieve proper synchronization between different RF chips, the local oscillator signal can be shared between the master RF chip (or host) and secondary RF chips (or slaves) of the RF device. In this context, the master RF chip can be configured to generate a local oscillator signal that can be shared across all RF chips throughout the cascaded RF system. In other words, at least one secondary RF chip can use the local oscillator signal generated by the master RF chip for operation (such as transmitting a signal or mixing it with a received signal instead of generating and using a separately asynchronous local oscillator signal). In this context, the RF chips of an RF device can include dedicated local oscillator inputs and dedicated local oscillator outputs for achieving specific synchronization. RF chips used in stand-alone configurations (i.e., not part of a cascaded RF system) may include one or more unused dedicated local oscillator inputs and / or local oscillator outputs.

[0040] Similar to the previous example, RF device 400 may include a processing unit configured to perform at least one of testing, monitoring, or calibration of RF chip 2 in a first mode based on a generated local oscillator RF signal, which is fed back into RF chip 2, as previously described. Figure 2 As described. It should be noted that the first mode executed by the processing unit can be particularly different from the second mode used to synchronize at least one RF chip 2 based on the generated RF signal, as previously described.

[0041] Now for reference Figure 5 This illustrates an RF device 500 according to the present disclosure. The RF device 500 may include some or all of the features of the RF devices previously described. In particular, the RF device 500 may be at least partially similar to... Figure 1 The RF device 100. In the illustrated example, the RF device 500 may include at least two RF chips 2A, 2B, which may be mounted on the top surface of the substrate 30. For example, the at least two RF chips 2A, 2B may form a cascaded system. The RF device 500 may include multiple transmitters disposed on the bottom surface of the substrate 30 for transmitting and receiving RF signals. In the illustrated example, the multiple RF chips 2A, 2B may be embedded within the same package. The RF device 500 may include an RF path for the return of RF signals within the package, as will be described below. Figure 6 As described.

[0042] Now for reference Figure 6 This illustrates an RF device 600 according to the present disclosure. The RF device 600 may include... Figure 5 The RF device 500 may include some or all of the features of the RF device 500. In the illustrated example, the RF device 600 may include at least two RF chips 2A, 2B, which may be part of a cascaded RF system. Each of the RF chips 2A, 2B may include, or may provide, an exemplary and non-limiting number of two TX channels TX1-TX2 and two RX channels RX1-RX2. However, it should be understood that the RF chips 2A, 2B may include any number of additional TX channels and / or RF channels. Similar to Figure 2 For example, the RF ports of the associated RF channels are indicated by dots, while rounded squares can indicate coupling structures, such as, for example, transmitters. This has been previously combined... Figure 2 An exemplary transmission of an RF signal via the TX channel and an exemplary reception of an RF signal via the RX channel are described.

[0043] From Figure 6As can be seen, the RF device 600 may include an RF signal path 20 coupled to the output of a first RF chip 2A and the input of a second RF chip 2B, wherein the RF signal path 20 may be configured to feed an RF signal from the output of the first RF chip 2A to the input of the second RF chip 2B. Specifically, the RF signal may be generated by a local oscillator included in the first RF chip 2A. In the illustrated example, the RF signal of the TX channel TX2 of the first RF chip 2A may be fed to the RX channel RX1 of the second RF chip 2B. That is, the TX channel TX2 of the first RF chip 2A is not necessarily used for broadcasting the RF signal in a conventional sense (such as broadcasting it to a waveguide antenna, for example); instead, the RF signal is fed to the second RF chip 2B for further processing. In one example, the RF signal path 20 may include a SIW (Self-Isolating Wave). Return to Reference Figure 5 For example, SIW 10 can be arranged in substrate 30. However, it should be understood that in another example, the RF signal feed from the output of the first RF chip to the input of the second RF chip can be established differently.

[0044] Similar to the previous examples, RF device 600 may include a processing unit (not shown) coupled to an input of a second RF chip 2B. For example, the processing unit may include or correspond to at least one of a microcontroller, a digital signal processor, etc. The processing unit may be configured to perform at least one of testing, monitoring, or calibrating at least one of RF chips 2A and 2B in a first mode based on a local oscillator RF signal generated by a local oscillator of the first RF chip 2A (which is fed back into the RF chip 2). In some examples, a second local oscillator may be arranged in the second RF chip 2B and configured to generate a second local oscillator signal. The processing unit may then be configured to perform at least one of testing, monitoring, or calibrating at least one of the first RF chip 2A or the second RF chip 2B in a first mode based on both the first local oscillator RF signal generated in the first RF chip 2A and the second local oscillator RF signal generated in the second RF chip 2B. It should be noted that the first mode performed by the processing unit may be particularly different from the second mode used for synchronizing RF chips 2A and 2B based on the local oscillator RF signal, as previously combined... Figure 4 As described.

[0045] In an illustrative and non-limiting example, in a first mode, phase noise can be estimated based on two local oscillator signals generated in two RF chips 2A and 2B, allowing phase noise monitoring to be performed. For example, RF chips 2A and 2B can correspond to a master MMIC and a slave MMIC in a cascaded RF system, both of which can be involved in the measurement of the phase noise estimation mode simultaneously. In this case, both RF chips 2A and 2B can use their internal local oscillators to generate separate FMCW (Frequency Modulated Continuous Wave) signals. The generated local oscillator signals can be mixed and low-pass filtered in the slave MMIC. The resulting signals can be further processed to estimate the average phase noise (PN) power spectral density (PSD) between the involved MMICs. The PN PSD can be used to detect whether one or both of the involved MMICs are generating phase noise beyond specifications. Those skilled in the art will be familiar with suitable algorithms or computational schemes for such phase noise estimation performed by a processing unit used for this phase noise estimation. It should be noted that the phase noise estimation and phase noise monitoring described can be performed specifically by an RF device comprising at least two RF chips, such as, for example, a cascaded RF system.

[0046] Now for reference Figure 7 The diagram illustrates an estimated RF device 700 of this disclosure. RF device 700 may include some or all of the features of the previously described RF devices. RF device 700 may include, for example, features related to... Figure 1 The RF device 700 comprises at least two RF packages 34A and 34B similar to the first RF package 34A. The first RF package 34A may include at least one first RF chip 2A, while the second RF package 34B may include at least one second RF chip 2B. In the illustrated side view, an exemplary number of two TX channels TX1, TX2 and two RX channels RX1, RX2 are shown for each of the RF chips 2A, 2B. However, it should be understood that the RF device 700 may include additional RF packages, and / or the RF chips 2A, 2B may provide additional TX channels and / or RX channels. The RF signals associated with the TX channels and RX channels may be transmitted and received by means of a transmitter, which may be disposed on the bottom surface of the packages 34A, 34B.

[0047] In the illustrated example, RF packages 34A and 34B can be mounted on the top surface of PCB 22, which in some examples may be considered part of RF device 700. RF device 700 may include a waveguide antenna 24 mounted on the bottom surface of the PCB. The waveguide antenna 24 may include a plurality of waveguides 26 formed inside the waveguide antenna 24. In the illustrated example, the waveguides 26 of the waveguide antenna 24 may include or correspond to inflated waveguides. PCB 22 may include a plurality of openings 28 extending from the top surface of PCB 22 to the bottom surface of PCB 22. These openings 28 may be aligned with transmitters disposed on the bottom surfaces of RF packages 34A and 34B, and may also be aligned with the waveguides 26 of the waveguide antenna 24.

[0048] RF device 700 may include an RF signal path 20 coupled to the output of a first chip 2A and the output of a second chip 2B, wherein the RF signal path 20 may be configured to feed an RF signal generated by a local oscillator of the first RF chip 2A from the output of the first RF chip 2A to the input of the second RF chip 2B. In the illustrated example, the output of the first RF chip 2A is the output of its TX channel TX2, and the input of the second RF chip 2B is its RX channel RX1. The RF signal path 20 may be configured to feed the generated local oscillator RF signal from the output of the TX channel TX2 to the input of the RX channel RX1. In the illustrated case, the RF signal path 20 may include a waveguide 26 formed in the waveguide antenna 24. Similar to the previous example, RF device 700 may include a processing unit (not shown) coupled to the input of the second RF chip 2B and configured to perform at least one of testing, monitoring, or calibrating at least one RF chip in a first mode based on the generated RF signal.

[0049] Now for reference Figure 8 This illustration shows another RF device 800 according to the present disclosure. RF device 800 may include some or all of the features of the previously described RF devices. In particular, RF device 800 may be at least partially similar to... Figure 5The RF device 500. Similar to the previous example, an RF signal can be fed from the output of a first RF chip 2A to the input of a second RF chip 2B. In the illustrated example, each of RF chips 2A and 2B may include a plurality of chip contacts 32 disposed on the bottom surface of the respective RF chip. The chip contacts 32 may include one or more inputs and one or more outputs of the respective RF chip. The first RF chip 2A may include at least one dedicated local oscillator output (see LOout), and the second RF chip 2B may include at least one dedicated local oscillator input (see LOin). Similar to the previous example, an RF signal path 20 may be configured to feed a local oscillator RF signal from the output of the first RF chip 2A to the input of the second RF chip 2B. More specifically, an RF signal path 20 may be configured to feed an RF signal from the local oscillator output (see LOout) of the first RF chip 2A to the local oscillator input (see LOin) of the second RF chip 2B. In the illustrated example, the RF signal path 20 may include a planar emitter line, which may be disposed in or on a substrate 30. For example, planar emission lines can be formed in the metal layers L1 and / or L2 of the substrate 30.

[0050] Now for reference Figure 9 The diagram illustrates an RF device 900 according to this disclosure. The RF device 900 may include some or all of the features of the previously described RF devices. In particular, the RF device 900 may be at least partially similar to... Figure 7 The RF device 700. Similar to the previous example, the RF device 900 may include an RF signal path 20 coupling the output of a first RF chip 2A and the input of a second RF chip 2B, wherein the RF signal path 20 may be configured to feed a generated local oscillator RF signal from the output of the first RF chip 2A to the input of the second chip 2B. In the illustrated example, the RF signal path 20 may be configured to feed a generated RF signal from the dedicated local oscillator output (see LOut) of the first RF chip 2A to the dedicated local oscillator input (see LOin) of the second RF chip 2B. In the illustrated case, the RF signal path 20 may include a planar transmit line, which may be arranged in or on a printed circuit board 22.

[0051] Figure 10 The illustration is a flowchart of a method for manufacturing an RF device according to the present disclosure. This method can be used to manufacture RF devices as previously described and can therefore be read in conjunction with the preceding figures. The method is described in a general manner to qualitatively designate aspects of the present disclosure. It should be understood that the method may include other aspects. For example, the method can be extended by combining any of the aspects described in conjunction with other examples according to the present disclosure.

[0052] At point 36, at least one RF chip may be arranged, wherein the at least one RF chip may include a local oscillator configured to generate an RF signal. At point 38, the output and input of at least one RF chip may be coupled by an RF signal path, wherein the RF signal path may be configured to feed the generated RF signal from the output of at least one RF chip to the input of at least one RF chip. In the first example, the term "at least one RF chip" may refer to a single RF chip. Here, the output of a single RF chip may be coupled to the input of the same single RF chip. In another example, the term "at least one RF chip" may refer to multiple RF chips. Here, the output of a first RF chip of multiple RF chips may be coupled to the input of a second RF chip of multiple RF chips different from the first RF chip. At point 40, a processing unit may be coupled to the input of at least one RF chip, wherein the processing unit may be configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal. For example, the coupling between the processing unit and the at least one RF chip may be established by a signal line, a planar transmit line, a waveguide, etc.

[0053] Figure 11 The illustration is a flowchart of a method for manufacturing an RF device according to the present disclosure. This method can be used to manufacture the previously described RF device and can therefore be read in conjunction with the preceding figures. The method is described in a general manner to qualitatively designate aspects of the present disclosure. It should be understood that the method includes other aspects. For example, the method can be extended by combining any of the aspects described in conjunction with other examples according to the present disclosure.

[0054] At point 42, at least one RF chip may be arranged, wherein the at least one RF chip may include a TX channel for RF signal transmission and an RX channel for RF signal reception. At point 44, the output of the TX channel and the input of the RX channel may be coupled by an RF signal path. The RF signal path may be configured to feed RF signals from the output of the TX channel to the input of the RX channel. Example

[0055] The examples described in this article provide RF devices and methods for manufacturing RF devices.

[0056] Example 1 is an RF device comprising: at least one RF chip including a local oscillator configured to generate an RF signal; an RF signal path coupled to the output of the at least one RF chip and the input of the at least one RF chip, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip to the input of the at least one RF chip; and a processing unit coupled to the input of the at least one RF chip and configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal.

[0057] Example 2 is the RF device of Example 1, and further includes: a second mode, different from the first mode, for synchronizing at least one RF chip based on the generated RF signal.

[0058] Example 3 is an RF device of Example 1 or Example 2, wherein the output and input of at least one RF chip are part of the same RF chip.

[0059] Example 4 is an RF device of Example 3, further comprising: a time delay element, formed at least in part by the RF signal path, and configured to apply a delay to the generated RF signal to generate a delayed RF signal.

[0060] Figure 5 The RF device of Example 4 is wherein: the time delay element is an artificial radar target, configured to apply attenuation to the generated RF signal to generate an attenuated RF signal, and the processing unit is configured to perform at least one of phase noise estimation or short-range leakage cancellation based on the delayed and attenuated RF signal.

[0061] Example 6 is an RF device of Example 1 or Example 2, wherein the output of at least one RF chip is part of a first RF chip, and the input of at least one RF chip is part of a second RF chip.

[0062] Example 7 is an RF device of Example 6, wherein the first RF chip and the second RF chip are part of a cascaded RF system.

[0063] Example 8 is an RF device of Example 6 or Example 7, wherein: a local oscillator is arranged in a first RF chip, another local oscillator is arranged in a second RF chip and configured to generate another RF signal, and a processing unit is configured to perform at least one of testing, monitoring or calibrating the first RF chip and the second RF chip in a first mode based on the two generated RF signals.

[0064] Example 9 is an RF device of any of the preceding examples, wherein: the output of at least one RF chip is the output of the transmit (TX) channel of at least one RF chip, and the input of at least one RF chip is the input of the receive (RX) channel of at least one RF chip, and the RF signal path is configured to feed the generated RF signal from the output of the TX channel to the input of the RX channel.

[0065] Example 10 is an RF device of any of Examples 1 to 8, wherein: the output of at least one RF chip is a dedicated local oscillator (LO) output, and the input of at least one RF chip is a dedicated LO input, and the RF signal path is configured to feed the generated RF signal from the LO output to the LO input.

[0066] Example 11 is an RF device of any of the preceding examples, wherein the RF signal path includes a substrate-integrated waveguide.

[0067] Example 12 is an RF device of Example 11, further comprising: a substrate, wherein at least one RF chip is disposed on the substrate, and a substrate-integrated waveguide is disposed in the substrate.

[0068] Example 13 is an RF device of any of the preceding examples, wherein the RF signal path includes a waveguide formed in a waveguide antenna.

[0069] Example 14 is an RF device of Example 13, further comprising: a printed circuit board, wherein at least one RF chip and a waveguide antenna are arranged on opposite sides of the printed circuit board, wherein a first opening of the printed circuit board is aligned with the output of at least one RF chip, and a second opening of the printed circuit board is aligned with the input of at least one RF chip.

[0070] Example 15 is an RF device of any of the preceding examples, wherein the RF signal path includes a planar transmit line.

[0071] Example 16 is an RF device of Example 15, further comprising: a substrate, wherein at least one RF chip is disposed on the substrate, and a planar emission line is disposed in or on the substrate.

[0072] Example 17 is an RF device of Example 15, and further includes: a printed circuit board, wherein at least one RF chip is disposed on the printed circuit board, and a planar emission line is disposed in or on the printed circuit board.

[0073] Example 18 is an RF device comprising: at least one RF chip including a TX channel for transmitting RF signals and an RX channel for receiving RF signals; and an RF signal path coupled to the output of the TX channel and the input of the RX channel, wherein the RF signal path is configured to feed RF signals from the output of the TX channel to the input of the RX channel.

[0074] Example 19 is an RF device of Example 18, where the output of the TX channel and the input of the RX channel are part of the same RF chip.

[0075] Example 20 is an RF device of Example 18, wherein the output of the TX channel is part of a first RF chip and the input of the RX channel is part of a second RF chip.

[0076] Example 21 is an RF device of any one of Examples 18 to 20, further comprising: a substrate, wherein at least one RF chip is disposed on the substrate, and wherein the RF signal path includes a substrate integrated waveguide disposed in the substrate.

[0077] Example 22 is an RF device of any one of Examples 18 to 21, further comprising: a waveguide antenna, wherein the RF signal path includes a waveguide formed in the waveguide antenna; and a printed circuit board, wherein at least one RF chip and the waveguide antenna are arranged on opposite surfaces of the printed circuit board, wherein a first opening of the printed circuit board is aligned with the output of the TX channel, and a second opening of the printed circuit board is aligned with the input of the RX channel.

[0078] Example 23 is a method for manufacturing an RF device, the method comprising: arranging at least one RF chip, the at least one RF chip including a local oscillator configured to generate an RF signal; coupling the output of the at least one RF chip and the input of the at least one RF chip by an RF signal path, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip to the input of the at least one RF chip; and coupling a processing unit to the input of the at least one RF chip, wherein the processing unit is configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal.

[0079] Example 24 is a method for manufacturing an RF device, the method comprising: arranging at least one RF chip including a TX channel for transmitting RF signals and an RX channel for receiving RF signals; and coupling the output of the TX channel and the input of the RX channel by an RF signal path, wherein the RF signal path is configured to feed RF signals from the output of the TX channel to the input of the RX channel.

[0080] As used in this specification, the terms “connected,” “coupled,” “electrically connected,” and / or “electrically coupled” do not necessarily mean that elements must be directly connected or coupled together. Intermediate elements may be provided between elements that are “connected,” “coupled,” “electrically connected,” or “electrically coupled.”

[0081] Furthermore, with respect to the use of the terms “having,” “containing,” “including,” “with,” or variations thereof in the detailed description or claims, such terms are intended to be inclusive in a manner similar to the term “comprising.” That is, as used herein, the terms “having,” “containing,” “including,” “with,” “comprising,” etc., are open-ended terms that indicate the presence of a feature of the stated element but do not exclude additional elements or features. The articles “a,” “an,” and “the” are intended to include both plural and singular forms unless the context clearly indicates otherwise.

[0082] Furthermore, the terms “exemplary” and “example” are used herein to mean used as an example, instance, or illustration. Any aspect or design described herein as “exemplary” or “example” is not necessarily to be construed as superior to other aspects or designs. Rather, the use of the terms “exemplary” and “example” is intended to present concepts in a specific manner. As used in this application, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” That is, unless otherwise specified or clearly indicated from the context, “X adopts A or B” is intended to mean either of the natural inclusive substitutions. That is, “X adopts A or B” is satisfied under any of the preceding examples if X adopts A; X adopts B; or X adopts both A and B. Furthermore, the articles “a” and “an” as used in this application and the appended claims can generally be interpreted as meaning “one or multiple” unless otherwise specified or clearly indicated from the context. Similarly, “at least one of A and B” generally means either A or B or both A and B.

[0083] While specific examples have been illustrated and described herein, those skilled in the art will understand that various substitutions and / or equivalent embodiments may be made for the specific examples shown and described without departing from the scope of the invention. This application is intended to cover any modifications or variations of the specific examples discussed herein. Therefore, the invention is intended to be limited only by the claims or their equivalents.

[0084] It should be noted that the methods and apparatuses, including those with preferred embodiments outlined in this document, can be used alone or in combination with other methods and apparatuses disclosed in this document. Furthermore, the features outlined in the context of the apparatus also apply to the corresponding methods, and vice versa. Moreover, all aspects of the methods and apparatuses outlined in this document can be combined arbitrarily. In particular, the features of the claims can be combined with each other in any manner.

[0085] It should be noted that the specification and drawings merely illustrate the principles of the proposed methods and systems. Those skilled in the art will be able to implement various arrangements, which, although not explicitly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and embodiments outlined in this document are intended primarily for illustrative purposes only to aid the reader in understanding the principles of the proposed methods and systems. Moreover, all statements herein providing the principles, aspects, and embodiments of the invention, as well as specific examples thereof, are intended to cover their equivalents.

Claims

1. A radio frequency (RF) device, comprising: At least one RF chip, including a local oscillator configured to generate RF signals; An RF signal path couples the output of the at least one RF chip to the input of the at least one RF chip, wherein the RF signal path is configured to feed the generated RF signal from the output of the at least one RF chip to the input of the at least one RF chip; as well as The processing unit is coupled to the input of the at least one RF chip and configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal.

2. The RF device according to claim 1, further comprising: The second mode, unlike the first mode, is used to synchronize the at least one RF chip based on the generated RF signal.

3. The RF device according to claim 1 or 2, wherein the output of the at least one RF chip and the input of the at least one RF chip are part of the same RF chip.

4. The RF device according to claim 3, further comprising: A time delay element, at least in part formed by the RF signal path and configured to apply a delay to the generated RF signal to generate a delayed RF signal.

5. The device according to claim 4, wherein: The time delay element is configured to apply attenuation to the generated RF signal to generate an artificial radar target with an attenuated RF signal, and The processing unit is configured to perform at least one of phase noise estimation or short-range leakage cancellation based on the delayed RF signal and the attenuated RF signal.

6. The RF device according to claim 1 or 2, wherein the output of the at least one RF chip is part of a first RF chip, and the input of the at least one RF chip is part of a second RF chip.

7. The RF device of claim 6, wherein the first RF chip and the second RF chip are part of a cascaded RF system.

8. The RF device according to claim 6 or 7, wherein: The local oscillator is located in the first RF chip. Another local oscillator is arranged in the second RF chip and configured to generate another RF signal, and The processing unit is configured to perform at least one of testing, monitoring, or calibrating the first RF chip and the second RF chip in the first mode based on the two generated RF signals.

9. The RF device according to any one of the preceding claims, wherein: The output of the at least one RF chip is the output of the transmit TX channel of the at least one RF chip, and the input of the at least one RF chip is the input of the receive RX channel of the at least one RF chip. The RF signal path is configured to feed the generated RF signal from the output of the TX channel to the input of the RX channel.

10. The RF device according to any one of claims 1 to 8, wherein: The output of the at least one RF chip is a dedicated local oscillator (LO) output, and the input of the at least one RF chip is a dedicated LO input. The RF signal path is configured to feed the generated RF signal from the LO output to the LO input.

11. The RF device according to any one of the preceding claims, wherein the RF signal path comprises a substrate-integrated waveguide.

12. The RF device of claim 11, further comprising: A substrate, wherein at least one RF chip is disposed on the substrate, and a substrate-integrated waveguide is disposed in the substrate.

13. The RF device according to any one of the preceding claims, wherein the RF signal path comprises a waveguide formed in a waveguide antenna.

14. The RF device of claim 13, further comprising: A printed circuit board, wherein at least one RF chip and the waveguide antenna are arranged on opposite sides of the printed circuit board, wherein a first opening of the printed circuit board is aligned with the output of the at least one RF chip, and a second opening of the printed circuit board is aligned with the input of the at least one RF chip.

15. The RF device according to any one of the preceding claims, wherein the RF signal path comprises a planar transmit line.

16. The RF device of claim 15, further comprising: A substrate, wherein at least one RF chip is disposed on the substrate, and the planar emission line is disposed in or on the substrate.

17. The RF device of claim 15, further comprising: A printed circuit board, wherein at least one RF chip is disposed on the printed circuit board, and the planar emission line is disposed in or on the printed circuit board.

18. An RF device, comprising: At least one RF chip, including a TX channel and an RX channel, wherein the TX channel is used for RF signal transmission and the RX channel is used for RF signal reception; as well as The RF signal path couples the output of the TX channel and the input of the RX channel. The RF signal path is configured to feed the RF signal from the output of the TX channel to the input of the RX channel.

19. The RF device of claim 18, wherein the output of the TX channel and the input of the RX channel are part of the same RF chip.

20. The RF device of claim 18, wherein the output of the TX channel is part of a first RF chip, and the input of the RX channel is part of a second RF chip.

21. The RF device according to any one of claims 18 to 20, further comprising: A substrate, wherein at least one RF chip is disposed on the substrate, and The RF signal path includes a substrate-integrated waveguide disposed in the substrate.

22. The RF device according to any one of claims 18 to 21, further comprising: A waveguide antenna, wherein the RF signal path includes a waveguide formed in the waveguide antenna; as well as A printed circuit board, wherein at least one RF chip and the waveguide antenna are arranged on opposite surfaces of the printed circuit board, wherein a first opening of the printed circuit board is aligned with the output of the TX channel and a second opening of the printed circuit board is aligned with the input of the RX channel.

23. A method for manufacturing an RF device, the method comprising: At least one RF chip is arranged, including a local oscillator configured to generate RF signals; The output of at least one RF chip and the input of at least one RF chip are coupled through an RF signal path, wherein the RF signal path is configured to feed the generated RF signal from the output of at least one RF chip to the input of at least one RF chip; as well as A processing unit is coupled to the input of the at least one RF chip, wherein the processing unit is configured to perform at least one of testing, monitoring, or calibrating the at least one RF chip in a first mode based on the generated RF signal.

24. A method for manufacturing an RF device, the method comprising: At least one RF chip is arranged, including a TX channel and an RX channel, wherein the TX channel is used for RF signal transmission and the RX channel is used for RF signal reception; as well as The output of the TX channel and the input of the RX channel are coupled through the RF signal path. The RF signal path is configured to feed the RF signal from the output of the TX channel to the input of the RX channel.

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