Quasi-rotating magnet and physical vapor deposition equipment and method

Abstract

The invention belongs to the technical field of deposition, and provides a quasi-rotating magnet and physical vapor deposition equipment and method.The quasi-rotating magnet comprises a mounting plate and a plurality of inductance coil devices, and the inductance coil devices are arranged on the mounting plate in an array mode; continuous movement of magnetic pole positions is achieved through control over the power-on sequence of the multiple inductance coil devices, and therefore a rotating magnetic field is formed. The water leakage risk is reduced, and meanwhile the utilization rate of the target material is guaranteed.

Description

Technical Field

[0001] This invention belongs to the field of deposition technology and relates to rotating magnets, physical vapor deposition equipment and methods. Background Technology

[0002] Physical vapor deposition (PVD) is a commonly used thin film preparation technique that uses plasma to bombard a target, sputtering the target's atoms or molecules onto a wafer surface to form a thin film. The most crucial aspect of PVD is using a magnetic field to control and enhance the sputtering process. Typically, a permanent magnet is mounted above the target, generating a magnetic field behind it. While ions are heavier than electrons and are almost unaffected by the magnetic field directly, it causes electrons to undergo helical motion, prolonging their residence time in the plasma near the target surface. This results in more ions being generated, and these ions also have higher energy, thus enhancing sputtering efficiency.

[0003] To improve the utilization rate of target materials, existing technologies include... Figure 1 As shown, a rotating magnetic field is used, that is, a rotating device is assembled from components such as motor 1, pulley 2, and synchronous belt 3. The rotating device drives the permanent magnet device 5 to rotate in a sealed chamber through a rotary joint 4. Cooling water enters the chamber where the permanent magnet device 5 is placed through the arrow in the figure to dissipate heat from the permanent magnet device.

[0004] In existing technologies, electrons follow the rotating magnetic field in a spiral motion, thereby generating more ions in the direction of magnetic field rotation. These ions also have higher energy and bombard the target material more uniformly, improving the utilization rate of the target material.

[0005] However, existing technology requires a motor to drive the rotating device to rotate the permanent magnet device 5 through the rotary joint 4. Because the rotary joint 3 is constantly rotating, cooling water needs to pass through the rotary joint 3 to cool the permanent magnet device. The whole device is not only complex in structure, but also increases the risk of water leakage.

[0006] Therefore, the need to reduce the risk of water leakage while ensuring the utilization rate of the target material is an important issue that the industry urgently needs to address. Summary of the Invention

[0007] In view of the above problems, one embodiment of the present invention aims to provide a type of rotating magnet that does not require rotation to provide a rotating magnetic field, omits driving components such as motors and rotating joints, reduces the risk of water leakage, and ensures the utilization rate of the target material.

[0008] Another objective of one embodiment of the present invention is to provide a physical vapor deposition apparatus and method.

[0009] According to a first aspect of the present invention, a rotating magnet is provided, comprising a mounting plate and a plurality of inductor coil devices arranged in an array on the mounting plate, wherein the energizing sequence of the plurality of inductor coil devices is controlled to achieve continuous movement of the magnetic pole positions, thereby forming a rotating magnetic field.

[0010] In one possible implementation, the inductor coil device includes magnetic pillars and an inductor coil, with an array of multiple magnetic pillars arranged on a mounting plate, and at least one layer of the inductor coil wound around the magnetic pillars.

[0011] In one possible implementation, each layer of inductor coil comprises multiple turns of wire.

[0012] In one possible implementation, the magnetic conductor is one or more of columnar silicon steel sheets, low-carbon steel, silicon steel, and permalloy.

[0013] In one possible implementation, the inductor coil device further includes thermally conductive adhesive that surrounds the inductor coil and exposes the end of the inductor coil that is not wound around the magnetic conductor.

[0014] In one possible implementation, the mounting plate includes an upper mounting plate and a lower mounting plate, with the inductor coil device disposed between the upper mounting plate and the lower mounting plate.

[0015] In one possible implementation, the upper mounting plate and / or lower mounting plate expose the energized wires of the inductor coil device.

[0016] In one possible implementation, the rotating magnet further includes a power supply device configured to control the energizing sequence of the plurality of inductor coil devices.

[0017] In one possible implementation, the power supply device includes a control system and a power supply, the control system controlling the switching of the inductor coil device on and off with the power supply.

[0018] In one possible implementation, the power source is an external power source.

[0019] In one possible implementation, the power supply device also controls the amount of electrical energy supplied to the inductor coil device and / or the energizing time.

[0020] According to a second aspect of the present invention, a physical vapor deposition apparatus is provided, comprising the aforementioned rotating magnet, target material, cooling chamber, and process chamber: The cooling chamber is located above the process chamber; The rotating magnet is located in the cooling chamber and positioned above the target material; The target material is partially located in the cooling chamber and partially located in the process chamber.

[0021] In one possible implementation, the physical vapor deposition apparatus further includes an electrical punch-through device disposed on a cooling chamber, which connects an inductor coil device to a power supply device.

[0022] In one possible implementation, the electrical penetration device includes a sealing structure and an insulating structure, the insulating structure for the passage of the energized wires of the inductor coil device resembling a rotating magnet, and the sealing structure for sealing the cooling chamber.

[0023] In one possible implementation, the cooling chamber includes at least one inlet, a coolant, and at least one outlet, the inlet and outlet being disposed on the cooling chamber, the coolant entering the cooling chamber from the inlet and exiting from the outlet.

[0024] In one possible implementation, the coolant is deionized water.

[0025] In one possible implementation, the inlet and outlet are located on the upper surface and / or side of the cooling chamber.

[0026] According to a third aspect of the present invention, a physical vapor deposition method is provided, comprising: The energizing sequence of multiple inductor coils controlling the rotating magnet-like structure of the aforementioned physical vapor deposition equipment forms a rotating magnetic field; By using a rotating magnetic field to confine electrons, plasma with controllable distribution and direction is generated to bombard a target material, sputtering target atoms or molecules onto the wafer surface to form a thin film.

[0027] In one possible implementation, the physical vapor deposition method further includes: Control the amount of electrical energy and / or the energizing time of multiple inductor coil devices.

[0028] The rotating magnet of this invention uses a novel magnet device based on electromagnetic induction to replace the traditional permanent magnet device, eliminating the rotation drive device and rotary joint, making the structure simpler, reducing the risk of water leakage, and also better controlling the movement trajectory of electrons, making more efficient use of target materials, and improving the utilization rate of target materials. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of a rotating magnetic field in existing technology; Figure 2 This is a front view schematic diagram of an embodiment of the rotating magnet described in this invention; Figure 3 This is a top view schematic diagram of an embodiment of the rotating magnet described in this invention; Figure 4 This is a bottom view schematic diagram of an embodiment of the rotating magnet described in this invention; Figure 5 This is a cross-sectional schematic diagram of an embodiment of the inductor coil device described in this invention; Figure 6 This is a front view schematic diagram of an embodiment of the physical vapor deposition apparatus described in this invention; Figure 7 This is a top view schematic diagram of an embodiment of the physical vapor deposition apparatus described in this invention; Figure 8 This is a schematic diagram of another embodiment of the physical vapor deposition apparatus described in this invention.

[0030] The components include: 1. Motor; 2. Pulley; 3. Synchronous belt; 4. Rotary joint; 5. Permanent magnet device; 100. Physical vapor deposition equipment; 10. Rotating magnet; 11. Mounting plate; 111. Upper mounting plate; 112. Lower mounting plate; 1121. Circular mounting plate; 12. Inductor coil device; 121. Magnetic guide column; 122. Inductor coil; 1221. Wire harness; 123. Current-carrying wire; 124. Waterproof layer; 125. Thermally conductive adhesive; 126. Housing; 13. Power supply device; 131. Control system; 132. Power supply; 20. Process chamber; 30. Target material; 40. Electrical penetration device; 41. Sealing structure; 42. Insulation structure; 50. Cooling chamber; 51. Inlet; 52. Coolant; 53. Outlet; 54. Top cover plate; 55. Side support plate. Detailed Implementation

[0031] Numerous specific details are set forth in the following description to provide a full understanding of the invention. However, the invention can be practiced in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0032] The terminology used in one or more embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a” and “the” as used in one or more embodiments of the invention and in the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0033] Hereinafter, one or more embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can clearly and completely understand the present invention. When the description of well-known structures or features would unnecessarily obscure the main points of the present invention, the description of such well-known structures or features will be omitted.

[0034] In existing PVD processes, a rotating magnetic field is generated by driving a permanent magnet to rotate via a motor, pulley, or synchronous belt to uniformly bombard the target material. This process relies on rotary joints and motor drive devices, resulting in complex structures, high maintenance costs, and a significant risk of cooling water leakage during long-term operation, which may contaminate the deposition chamber and affect equipment stability.

[0035] To address the aforementioned technical problems in the prior art, the present invention provides a type of rotating magnet, such as... Figures 2-4 As shown, the rotating magnet 10 does not rotate. By controlling the energizing sequence of the inductor coil device 12 that generates the magnetic field, the magnetic pole position is continuously moved, thereby forming a rotating magnetic field. In other words, when the energizing sequence of multiple inductor coil devices 12 controls the direction of the magnetic field to change sequentially, the composite magnetic field forms a rotating effect in space.

[0036] In physical vapor deposition (PVD), a rotating magnetic field is generated by controlling the conduction sequence of the inductor coil device 12, which significantly improves process efficiency and film quality compared to a motor-driven permanent magnet solution. First, it simplifies the mechanical structure: eliminating the need for moving parts such as motors and rotary joints completely eliminates the risk of cooling water leakage caused by mechanical rotation, resulting in higher equipment reliability.

[0037] Second, dynamic magnetic field control is achieved: by precisely controlling the energizing sequence, current magnitude and time of each inductor coil device 12, the magnetic field strength, distribution and rotation speed can be flexibly adjusted, thereby optimizing the plasma density and etching uniformity of the target material 30.

[0038] Third, improve the utilization rate of target material 30 and the uniformity of film: The dynamic rotating magnetic field can more effectively constrain the movement of electrons, prolong their residence time near target material 30, generate more high-energy ions, achieve uniform etching on the surface of target material 30, reduce local loss, and help obtain films with more consistent composition and thickness.

[0039] The electromagnetic field control method of the rotating magnet 10 described in this invention provides greater flexibility and stability for the PVD process.

[0040] In one feasible embodiment, such as Figure 2 As shown, the rotating magnet 10 includes a mounting plate 11 and a plurality of inductor coil devices 12, which are arranged in an array on the mounting plate 11.

[0041] In a preferred embodiment, such as Figures 2-4As shown, the mounting plate 11 includes an upper mounting plate 111 and a lower mounting plate 112. The inductor coil device 12 is disposed between the upper mounting plate 111 and the lower mounting plate 112. The upper mounting plate 111 or the lower mounting plate 112 exposes the energized wire 123 of the inductor coil device 12.

[0042] In one feasible embodiment, the quasi-rotating magnet 10 further includes a power supply device 13 ( Figure 8 (As shown), the power supply device 13 controls the energizing sequence of multiple inductor coil devices 12. The power supply device 13 can be installed in an electrical cabinet.

[0043] In one feasible embodiment, the power supply device 13 includes a control system 131 ( Figure 8 (shown) and power supply 132 ( Figure 8 As shown in the diagram, the control system 131 controls the switching on and off of the inductor coil device 12 and the power supply 132. The control system 131 can control the power-on sequence of multiple inductor coil devices 12 through hardware or a combination of hardware and software: for example, the power-on sequence can be directly controlled by hardware circuits, which can be one or more of timing controllers (PLCs, etc.), relay arrays, and switch arrays; or, control instructions can be generated using software algorithms of computers or microprocessors, and the hardware circuits are responsible for executing and precisely managing the power-on sequence of multiple inductor coil devices 12.

[0044] Preferably, the power supply 132 is an external power supply, controlled by the control system 131, which can individually control the energization of each inductor coil 122. Due to the electromagnetic induction effect, when current passes through the inductor coil 122, the inductor coil 122 generates a magnetic field. During the process, energizing each turn of the inductor coil 122 in a certain sequence can produce the same rotating magnetic field effect as a rotating permanent magnet.

[0045] In one feasible embodiment, the control system 131 also controls the amount of electrical energy and / or the energizing time of the inductor coil device 12.

[0046] Figure 5 This is a cross-sectional schematic diagram of an embodiment of the inductor coil device described in this invention, as shown below. Figure 5 and Figure 2 As shown, the inductor coil device 12 includes magnetic posts 121 and inductor coils 122. A plurality of magnetic posts 121 are arranged in an array on the mounting plate 11, and at least one layer of inductor coils 122 is wound on the magnetic posts 121.

[0047] Multilayer inductor coil 122: Through multi-turn winding, a stronger and more uniform magnetic field can be generated, which can more effectively confine electron movement and prolong their residence time near the target material 30, thereby generating more high-energy ions and significantly improving sputtering efficiency and thin film uniformity. Single-layer inductor coil 122: Simple structure, low manufacturing cost, and good heat dissipation performance. By controlling the energizing sequence of the multilayer inductor coil 122, both the functions of a single-layer inductor coil 122 and a multilayer inductor coil 122 can be achieved.

[0048] In one feasible embodiment, each layer of inductor coil 122 includes multiple turns of wire.

[0049] In one feasible embodiment, the inductor coil 122 is wound around a magnetic conductor, exposing the current-carrying wire 123.

[0050] Preferably, the outer surface of the aforementioned conductive wire 123 is covered with a waterproof layer 124.

[0051] In one feasible embodiment, the magnetic conductor is a columnar silicon steel sheet. As a magnetic conductor, the columnar silicon steel sheet has high permeability and low hysteresis loss, effectively concentrating and guiding the magnetic field, significantly improving inductance and energy conversion efficiency. Other materials can also be used for the magnetic conductor, such as low-carbon steel, silicon steel, permalloy, etc.

[0052] In one feasible embodiment, the inductor coil device 12 further includes thermally conductive adhesive 125. The thermally conductive adhesive 125 surrounds the inductor coil 122 and exposes the end of the inductor coil 122 that is not wrapped around the magnetic conductor (the current-carrying wire). The wrapping of the thermally conductive adhesive 125 not only fixes the inductor coil 122, but also provides an efficient heat dissipation path, which can quickly conduct away the heat generated by the inductor coil 122 during operation, preventing performance degradation or damage caused by overheating, thereby extending the service life of the device. The array arrangement of the magnetic posts 121 and the fixing effect of the thermally conductive adhesive 125 ensure the structural stability of the inductor coil 122 during operation and reduce the risk of vibration and displacement. At the same time, the thermally conductive adhesive 125 only wraps the coil body, exposing the current-carrying wire, making installation, disassembly and maintenance very convenient.

[0053] In one feasible embodiment, the inductor coil device 12 further includes a housing 126, which surrounds the thermally conductive adhesive 125. The thermally conductive adhesive 125 may be potted between the housing 126 and the inductor coil 122 using potting compound.

[0054] In a preferred embodiment, an inductor coil 122 is wound around a cylindrical silicon steel sheet with several turns, which can be one layer or multiple layers, with the winding direction consistent. The outer surface is coated with thermally conductive adhesive 125 to form a cylindrical shape. Several inductor coils 122 are mounted on the upper mounting plate 111 in a coiled arrangement. The number of coil turns and the distribution of the inductor coils 122 can be determined as needed, for example, based on the required magnetic field strength.

[0055] In a preferred embodiment, such as Figure 4 As shown, the lower mounting plate 112 corresponds to the inductor coil 122 and is composed of multiple annular mounting plates 1121 of different sizes. The annular mounting plate 1121 corresponds to the position of each turn of the inductor coil 122.

[0056] The inductor coil device 12 of the present invention achieves efficient, stable and easy-to-maintain electromagnetic conversion through the cooperation of the magnetic post 121 and the inductor coil 122, and the assistance of the thermally conductive adhesive 125.

[0057] Figure 6 This is a front view schematic diagram of an embodiment of the physical vapor deposition apparatus described in this invention. Figure 7 This is a top view schematic diagram of an embodiment of the physical vapor deposition apparatus described in this invention, as shown below. Figure 6 and Figure 7 As shown, the physical vapor deposition apparatus 100 includes a rotating magnet 10, a process chamber 20, a target material 30, and a cooling chamber 50. The cooling chamber 50 is located above the process chamber 20; The rotating magnet 10 is located inside the cooling chamber 50; The target material 30 is partially located in the cooling chamber 50 and partially located in the process chamber 20.

[0058] The rotating magnet 10 in the aforementioned physical vapor deposition apparatus generates a rotating magnetic field, which controls the helical motion of electrons, thereby generating more ions and giving these ions higher energy to bombard the target material more uniformly; the cooling chamber 50 cools the rotating magnet 10 and the target material 30.

[0059] The physical vapor deposition apparatus 100 of the present invention adopts a novel magnet device (rotating magnet 10) based on the electromagnetic induction effect, which generates a rotating magnetic field by energizing the inductor coil 122, making the structure more streamlined, the magnetic field easier to control, and the utilization rate of the target material 30 more effective.

[0060] The physical vapor deposition (PVD) equipment of this invention uses a quasi-rotating magnet instead of a traditional rotating permanent magnet. By controlling the energizing sequence of the inductor coils, the magnetic poles are moved, thereby creating a rotating magnetic field. This reduces the risk of water leakage caused by mechanical rotation: traditional PVD equipment relies on a rotating joint for continuous water cooling, and the seals are prone to wear, leading to leakage. In contrast, the quasi-rotating magnet itself does not rotate; cooling water only needs to flow through a fixed pipe (within the cooling chamber) and does not need to pass through rotating components, thus reducing the possibility of leakage at its source.

[0061] The physical vapor deposition equipment described in this invention can maintain or even improve target utilization: This invention enables dynamic magnetic field control: by precisely adjusting the energizing sequence of the inductor coils, the magnetic pole position can be continuously changed, forming an equivalent rotating magnetic field; electrons still undergo helical motion in the magnetic field, resulting in more uniform ion bombardment, and the target utilization is comparable to traditional rotating magnetic field schemes; This invention also allows for process optimization potential: the dynamic magnetic field can flexibly adjust the plasma distribution, further optimizing sputtering uniformity and potentially even improving target utilization. Existing technologies suffer from target utilization limitations due to the mechanical constraints of rotating magnets, making dynamic magnetic field control impossible.

[0062] The physical vapor deposition equipment described in this invention eliminates mechanical components such as motors, pulleys, timing belts, and rotary joints, making the equipment more compact, more reliable, and with lower maintenance costs.

[0063] The physical vapor deposition apparatus of this invention separates the cooling chamber and the process chamber, with the quasi-rotating magnet located within the cooling chamber. This physical isolation enhances the stability of the magnetic field and the reliability of the equipment, while simultaneously reducing maintenance costs. Specifically: Complete isolation from process interference: Improved magnetic field stability: Plasma, temperature fluctuations, or gaseous environments within the process chamber will not interfere with the magnetic field of the rotating magnet, ensuring magnetic field uniformity and stability; Improved equipment reliability: The isolation design reduces the physical or chemical impact of the process chamber on the magnet, extending equipment life.

[0064] Enhancing process stability: Improving film quality: A stable magnetic field helps maintain uniformity in the sputtering process, reducing film defects and increasing yield; Improving process repeatability: The magnetic field is unaffected by process fluctuations, resulting in more consistent coating results each time, suitable for high-precision manufacturing. Simplified maintenance and reduced costs: Reduced maintenance: The isolation design reduces the risk of magnet contamination or damage, reducing maintenance frequency and costs; Extended target life: A stable magnetic field helps the target material to be consumed evenly, reducing local overheating or waste and lowering material costs.

[0065] In one feasible embodiment, the quasi-rotating magnet 10 is disposed above the target material 30.

[0066] In one feasible embodiment, such as Figure 6 As shown, the physical vapor deposition apparatus 100 also includes an electrical punch-through device 40, which is disposed on the cooling chamber 50 and connects the inductor coil device 12 to the power supply device 13.

[0067] Preferably, the electrical penetration device 40 includes a sealing structure 41 and an insulating structure 42. The insulating structure 42 is used for the passage of the energized wire 123 of the inductor coil device 12 of the rotating magnet 10, and the sealing structure 41 seals the cooling chamber 50. The energized structure of the inductor coil 122 ultimately converges to the electrical penetration device 40. The electrical penetration device 40, with its sealing structure 41 and insulating structure 42, connects the inductor coil 122 to the power supply device 13.

[0068] In one feasible embodiment, such as Figure 8 As shown, one end of each of the plurality of inductor coils 122 is wound around a corresponding magnetic post 121, and the other end forms a wire bundle 1221 that is directly connected to the electrical penetration device 40.

[0069] In one feasible embodiment, the wires of the inductor coil 122 are ribbon cables, one end of which is wound around a plurality of magnetic posts 121, and the wire bundle 1221 at the other end of the ribbon cable is inserted into the insulation structure 42 of the electrical penetration device 40 (e.g., the wire socket of the insulation structure 42).

[0070] In one feasible embodiment, such as Figure 6 As shown, the cooling chamber 20 includes a top cover plate 54, which is detachably installed from the main body of the cooling chamber 50, and the electrical penetration device 40 is provided on the top cover plate 54.

[0071] In a preferred embodiment, such as Figure 7 and Figure 8 As shown, the cooling chamber 50 includes at least one inlet 51, a coolant 52 and at least one outlet 53. The inlet 51 and the outlet 53 are disposed on the cooling chamber 50. The coolant 52 enters the cooling chamber 50 from the inlet 51 and exits from the outlet 53.

[0072] In one feasible embodiment, the inlet 51 and outlet 53 are disposed on the upper surface and / or side of the cooling chamber 50.

[0073] In one feasible embodiment, such as Figure 8 The coolant 52 shown is water (e.g., deionized water), and the cooling chamber forms a cooling water chamber. The inductor coil device 12 is installed in a sealed water chamber filled with cooling water. The cooling water inlet 51 and outlet 53 are located on the upper surface and / or side of the water chamber.

[0074] In one feasible embodiment, the cooling chamber 50 further includes a side support plate 55 disposed between the top cover plate 54 and the target material 30.

[0075] In one feasible embodiment, a sealing structure 41 (e.g., an O-ring) is provided between the side support plate 55 and the top cover plate 54.

[0076] In one feasible embodiment, a sealing structure 41 (e.g., an O-ring) is provided between the side support plate 55 and the target material 30.

[0077] In one feasible embodiment, the bottom surface of the cooling chamber 50 is the target material 30, and the cooling chamber 50 and the target material 30 form the top cover plate of the process chamber 20.

[0078] In one feasible embodiment, the cooling chamber 50 is a hollow cavity with openings at both the top and bottom, with a top cover plate 54 covering the upper opening and a target material 30 covering the lower opening.

[0079] In one feasible embodiment, the target 30 is detachably linked to the side support plate 55.

[0080] The physical deposition apparatus of this invention separates the cooling chamber and the process chamber, with the cooling chamber and the target material serving as the top cover of the process chamber. This solves the water leakage problem of traditional rotating magnets and improves target material utilization and equipment reliability through structural optimization, while reducing the overall size of the equipment, making it suitable for space-constrained production line layouts. This integrated design also simplifies the equipment assembly process and reduces manufacturing costs. The cooling chamber directly contacts the target material, efficiently transferring the heat generated by the target and reducing the impact of localized overheating on coating quality. Simultaneously, the coolant circulation system precisely controls the target material temperature, improving process stability.

[0081] This invention also provides a physical vapor deposition method, comprising: The energizing sequence of multiple inductor coil devices 12 of the control-type rotating magnet 10 forms a rotating magnetic field; By using a rotating magnetic field to confine electrons, plasma with controllable distribution and direction is generated to bombard the target material 30, and the atoms or molecules of the target material 30 are sputtered onto the wafer surface to form a thin film.

[0082] In one feasible embodiment, the physical vapor deposition method further includes: Control the amount of electrical energy and / or the energizing time of multiple inductor coil devices 12.

[0083] The physical vapor deposition method described in this invention precisely controls the energizing sequence and current magnitude, which can significantly optimize the uniformity, adhesion, and plasma environment of the thin film, thereby improving the overall deposition quality. Improving thin film uniformity: Plasma density distribution can be optimized by dynamically adjusting the energizing sequence and current; Enhancing film-substrate adhesion: The magnitude of the current directly affects the energy of ion bombardment of the substrate. Precise control of ion bombardment energy can thus enhance the adhesion between the film and the substrate. Simultaneously, plasma-assisted methods (such as magnetron sputtering) can increase particle energy, further enhancing the film's density and adhesion. Optimizing the plasma environment: Coordinated regulation of energization sequence and current can stabilize the plasma environment. For example, dynamic voltage or current compensation can reduce the difference in edge electric field intensity, establish a more stable plasma environment, and reduce film thickness fluctuations.

[0084] This invention significantly improves the film quality and deposition efficiency of PVD processes by intelligently controlling the energizing sequence and the amount of electrical energy, combined with multi-parameter collaborative optimization.

[0085] The physical vapor deposition method of this invention improves film quality by changing the energizing sequence and energizing time, and optimizing the plasma environment. More uniform thin film deposition: Precise control of the energizing sequence and duration can more uniformly excite and confine the plasma, resulting in a more uniform distribution of metal ions on the substrate surface and reducing film defects. For example, using a closed magnetic field structure (such as unbalanced magnetron sputtering) can enhance plasma density and increase sputtering rate. Furthermore, by activating coils in different regions in a specific sequence, the magnetic field distribution can be dynamically adjusted, allowing the plasma to more uniformly cover the target surface, thereby reducing film thickness fluctuations. Additionally, the energizing time directly affects the deposition rate and plasma stability; pulse modulation techniques (such as bipolar pulses) can be used to precisely control ion bombardment energy and deposition rate, reducing the standard deviation of plasma density distribution.

[0086] Enhanced membrane-substrate bonding: By adjusting the energizing time, the energy and frequency of ion bombardment of the substrate can be optimized, thereby significantly improving the bonding strength between the film and the substrate.

[0087] The above provides several embodiments for changing the electrical parameters of the rotating magnetic field, but the present invention is not limited thereto. The electrical parameters of the control inductor coil device can be optimized in a multi-parameter synergistic manner with other parameters of vapor deposition. For example, the energizing sequence, energizing time, current magnitude and parameters such as gas pressure and wafer temperature can be dynamically matched to achieve high-efficiency uniform film deposition on the wafer.

[0088] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0089] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. The optional embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the embodiments of the present invention. These embodiments are selected and specifically described to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to better understand and utilize the present invention.

Claims

1. A type of rotating magnet, characterized in that, It includes a mounting plate and multiple inductor coil devices, which are arranged in an array on the mounting plate. The energizing sequence of the multiple inductor coil devices is controlled to continuously move the magnetic pole position, thereby forming a rotating magnetic field.

2. The quasi-rotational magnet according to claim 1, characterized in that, The inductor coil device includes magnetic pillars and inductor coils, with multiple magnetic pillar arrays arranged on a mounting plate, and at least one layer of the inductor coils wound around the magnetic pillars.

3. The quasi-rotational magnet according to claim 2, characterized in that, Each layer of inductor coil includes multiple turns of wire; Or / and, the magnetic conductor is one or more of columnar silicon steel sheets, low carbon steel, silicon steel and permalloy; Or / and, the inductor coil device further includes thermally conductive adhesive, which surrounds the inductor coil and exposes the end of the inductor coil that is not wound around the magnetic conductor.

4. The quasi-rotational magnet according to claim 1, characterized in that, The mounting plate includes an upper mounting plate and a lower mounting plate, and the inductor coil device is disposed between the upper mounting plate and the lower mounting plate; Or / and, it also includes a power supply device configured to control the energizing sequence of the plurality of inductor coil devices.

5. The quasi-rotational magnet according to claim 4, characterized in that, The upper mounting plate and / or lower mounting plate exposes the energized wires of the inductor coil device; Or / and, the power supply device includes a control system and a power supply, the control system controlling the connection and disconnection of the inductor coil device with the power supply; Or / and, the power supply device also controls the amount of electrical energy supplied to the inductor coil device and / or the energizing time.

6. The quasi-rotational magnet according to claim 5, characterized in that, The power source is an external power source.

7. A physical vapor deposition apparatus, characterized in that, Includes the quasi-rotating magnet, target material, cooling chamber, and process chamber as described in any one of claims 1-6: The cooling chamber is located above the process chamber; The rotating magnet is located in the cooling chamber and positioned above the target material; The target material is partially located in the cooling chamber and partially located in the process chamber.

8. The physical vapor deposition apparatus according to claim 7, characterized in that, It also includes an electrical penetration device, which is installed on the cooling chamber and connects the inductor coil device to the power supply device; Or / and, the cooling chamber includes at least one inlet, a coolant and at least one outlet, the inlet and outlet being disposed on the cooling chamber, the coolant entering the cooling chamber from the inlet and exiting from the outlet.

9. The physical vapor deposition apparatus according to claim 8, characterized in that, The electrical penetration device includes a sealing structure and an insulating structure. The insulating structure is used for the passage of the current-carrying wire of the inductor coil device, which resembles a rotating magnet, and the sealing structure is used to seal the cooling chamber. Or / and, the coolant is deionized water; Or / and, the inlet and outlet are located on the upper surface and / or side of the cooling chamber.

10. A physical vapor deposition method, characterized in that, include: The energizing sequence of multiple inductor coil devices of the physical vapor deposition apparatus of any one of claims 7-9 forms a rotating magnetic field; By using a rotating magnetic field to confine electrons, plasma with controllable distribution and direction is generated to bombard a target material, sputtering target atoms or molecules onto the wafer surface to form a thin film.

11. The physical vapor deposition method according to claim 10, characterized in that, Also includes: Control the amount of electrical energy and / or the energizing time of multiple inductor coil devices.

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