Compact InGaAs detector with built-in current and voltage conversion and conditioning circuit, laser detection device and method

Abstract

The invention discloses a compact InGaAs detector with a built-in current-voltage conversion and conditioning circuit, a laser detection device and a laser detection method, which are mainly used for solving the technical problems that the existing InGaAs detector cannot directly and stably output a voltage signal and needs to be externally connected with a complex current-voltage conversion and conditioning circuit to obtain the voltage signal. The invention relates to a compact InGaAs detector with a built-in current and voltage conversion and conditioning circuit, which comprises a shell and a light window, the shell and the light window form an airtight cavity, and an InGaAs chip, the current and voltage conversion circuit, the conditioning circuit and a diaphragm are arranged in the airtight cavity. The InGaAs chip converts a received optical signal into a current signal, the current and voltage conversion circuit converts the current signal into a voltage signal, and the conditioning circuit conditions the voltage signal and outputs a conditioning signal Vout. The technical problem that a common InGaAs detector directly outputs a current signal is solved.

Description

Technical Field

[0001] This invention relates to InGaAs detectors and detection methods, specifically to a compact InGaAs detector, laser detection device, and method with built-in current-voltage conversion and conditioning circuitry. Background Technology

[0002] With the rapid development of laser technology, the performance of laser systems has been continuously improved, and they are now widely used in industrial manufacturing, information transmission, scientific research, and other fields. Laser parameter measurement is indispensable in the development and application of laser systems. InGaAs detectors, which convert optical signals into electrical signals, are crucial functional components in the development of laser parameter measurement equipment.

[0003] Commonly used InGaAs detectors typically output current signals directly, not voltage signals. Complex current-to-voltage conversion and signal conditioning are required to obtain a voltage signal for further processing. Therefore, to effectively reduce the complexity and size of laser parameter measurement equipment, a compact InGaAs detector solution that can directly and stably output a voltage signal is urgently needed. Summary of the Invention

[0004] The purpose of this invention is to solve the technical problem that existing InGaAs detectors cannot directly and stably output voltage signals and require complex external current-to-voltage conversion and conditioning circuits to obtain voltage signals. The invention provides a compact InGaAs detector, laser detection device, and method with built-in current-to-voltage conversion and conditioning circuits.

[0005] To achieve the above objectives, the technical solution provided by this invention is as follows:

[0006] A compact InGaAs detector with built-in current-to-voltage conversion and conditioning circuitry, characterized by:

[0007] It includes a housing, optical window, InGaAs chip, current-to-voltage conversion circuit, conditioning circuit, power supply pin, ground pin, and signal output pin;

[0008] The housing includes a cap and a base; the backlight end of the cap is mounted on the inner side of the base, and the light-facing end has an opening coaxial with the cap; the power pin, ground pin, and signal output pin are located on the outer side of the base.

[0009] The light window is located at the opening of the tube cap, forming an airtight cavity with the tube cap and the base;

[0010] The InGaAs chip, current-to-voltage conversion circuit, and conditioning circuit are all housed within an airtight cavity, and the current-to-voltage conversion circuit and conditioning circuit are mounted on the inner side of the base.

[0011] The InGaAs chip is used to convert optical signals into current signals. Its output is connected to a current-to-voltage conversion circuit via a gold wire. The current-to-voltage conversion circuit is used to convert the current signal into a voltage signal. The input of the conditioning circuit is connected to the output of the current-to-voltage conversion circuit. It is used to condition the voltage signal and output a conditioning signal Vout. The output of the conditioning circuit is connected to a signal output pin via a gold wire.

[0012] The power supply and ground terminals of the InGaAs chip, current-to-voltage conversion circuit, and conditioning circuit are connected to the power supply pin and ground pin, respectively, via gold wires.

[0013] Furthermore, the current-to-voltage conversion circuit includes a resistor R and a capacitor C connected in parallel. One end of the resistor R is connected to the positive terminal of the InGaAs chip, and the other end is connected to the ground pin; the negative terminal of the InGaAs chip is connected to the power supply pin.

[0014] The conditioning circuit includes an operational amplifier chip. The non-inverting input of the operational amplifier chip is connected to one end of a resistor R to receive a voltage signal. The inverting input of the operational amplifier chip is connected to the signal output to form a voltage follower, which is used for voltage signal conditioning, buffering, and impedance transformation. The positive terminal of the operational amplifier chip is connected to a power supply pin, and the negative terminal is connected to a ground pin. The signal output of the operational amplifier chip is connected to a signal output pin to output a conditioning signal Vout.

[0015] The formula for calculating the conditioning signal Vout is: Vout = Ip•r; where Ip is the current value of the current signal and r is the resistance value of the resistor R.

[0016] The resistor R, capacitor C, and operational amplifier chip are coated with adhesive on their light-facing outer surfaces for fixation and light shielding.

[0017] Furthermore, a partition with a central opening is provided on the inner wall of the tube cap, and the InGaAs chip is mounted on the side of the partition near the light window.

[0018] Furthermore, the InGaAs chip is mounted on the inner side of the base;

[0019] It also includes an aperture, which is arranged parallel to the optical window and between the InGaAs chip; an aperture opening is formed at the center of the aperture; the diameter of the aperture opening is the same as the diagonal length of the InGaAs chip.

[0020] Furthermore, the response spectrum of the InGaAs chip is in the range of 0.9~1.7μm;

[0021] The capacitor C has a capacitance of 10pF and is used for signal filtering;

[0022] The resistor R is used to convert the input current into voltage;

[0023] A rectangular positioning protrusion is provided on the outer edge of the base to locate the position of the detector pins;

[0024] The light window is made of quartz or white sapphire.

[0025] Furthermore, the housing is packaged in a TO package format.

[0026] Furthermore, the housing is packaged as a surface mount device (SMD) package.

[0027] The present invention also provides a laser detection device, which is characterized by:

[0028] Includes detectors, detector fixtures, four-dimensional displacement stages, DC power supplies, oscilloscopes, optical attenuators, optical attenuator fixtures, and lasers;

[0029] The detector is a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry as described in any one of claims 1-7;

[0030] The laser is used to emit laser light, and the optical attenuator and detector are placed sequentially along the laser light path, with the optical attenuator located on the side of the detector facing the light.

[0031] The detector is fixed to a four-dimensional displacement stage by a detector clamp, with its light-facing surface facing the optical attenuator.

[0032] The power supply pin is connected to the positive terminal of the DC power supply via a wire; the signal output pin is connected to the signal input terminal of the oscilloscope via a wire; and the ground pin is connected to the negative terminal of the DC power supply and the ground terminal of the oscilloscope via wires.

[0033] The optical attenuator is fixed on the optical attenuator fixture.

[0034] The present invention also provides a laser detection method based on the above-mentioned laser detection device, characterized in that it includes the following steps:

[0035] S1. Determine the resistance value r of resistor R in the current-to-voltage conversion circuit according to the measurement requirements of the laser under test, connect it to the current-to-voltage conversion circuit, and complete the hermetically sealed packaging.

[0036] S2. Calculate the conditioning signal Vout based on the current signal output from the InGaAs chip irradiated by the laser under test and the resistance value r determined in step S1; set the output voltage of the DC power supply to be greater than the conditioning signal Vout.

[0037] S3. Turn on the oscilloscope and DC power supply, and stabilize the output voltage of the DC power supply;

[0038] S4. Turn on the laser, output laser light and irradiate the optical window through the optical attenuator;

[0039] S5. Adjust the four-dimensional displacement stage and observe the response voltage of the oscilloscope until the response voltage of the oscilloscope reaches its maximum value, then lock the four-dimensional displacement stage.

[0040] S6. Adjust the output power of the laser from the lowest power to the highest power, and record the laser power and oscilloscope readings at the same time to obtain the power density-response voltage calibration data; plot the response voltage as a function of laser power density based on the power density-response voltage calibration data.

[0041] S7. Replace the laser with the laser under test, adjust the four-dimensional displacement stage according to the method in step S5 and lock it; read the response voltage of the laser under test through an oscilloscope, obtain the power density corresponding to the laser under test according to the curve of response voltage changing with laser power density, and complete the laser detection.

[0042] Compared with the prior art, the present invention has the following beneficial technical effects:

[0043] 1. This invention discloses a compact InGaAs detector with built-in current-to-voltage conversion and conditioning circuitry, comprising a housing and an optical window. The housing and optical window form an airtight cavity, within which an InGaAs chip, a current-to-voltage conversion circuit, a conditioning circuit, and an aperture are disposed. The InGaAs chip converts the received optical signal into a current signal, the current-to-voltage conversion circuit converts the current signal into a voltage signal, and the conditioning circuit conditions the voltage signal and outputs a conditioning signal Vout. This invention overcomes the technical problem of commonly used InGaAs detectors that directly output current signals but cannot directly and stably output voltage signals, requiring complex external current-to-voltage conversion and conditioning circuits to obtain stable voltage signals.

[0044] 2. The present invention provides a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry. When applied to the development of laser parameter measurement equipment, it can greatly reduce system complexity and space volume, and is suitable for the integration of large-scale detector arrays.

[0045] 3. The InGaAs detector with built-in current-voltage conversion and conditioning circuit of the present invention adopts TO packaging and its variants. The packaging technology is mature and standardized, and has the advantages of high reliability, strong adaptability, low cost and easy maintenance, making it suitable for large-scale manufacturing.

[0046] 4. The compact InGaAs detector with built-in current-voltage conversion and conditioning circuit of the present invention uses a resistor R and a capacitor C connected in parallel as the current-voltage conversion circuit, which has the advantages of simple structure, low cost and good linearity.

[0047] 5. The compact InGaAs detector with built-in current-voltage conversion and conditioning circuit of the present invention uses a voltage follower as the conditioning circuit, which has the functions of signal conditioning, signal buffering and impedance transformation. It is directly connected to the signal output pin, which enhances stability and versatility, and is simple in design, low in cost and low in power consumption.

[0048] 6. This invention provides a laser detection device, comprising a laser, an optical attenuator, a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry, an oscilloscope, and a DC power supply, all arranged sequentially along the same optical path. The detector is fixed on a four-dimensional displacement stage, allowing for precise adjustment of its spatial position and angle, ensuring optical path alignment accuracy and improving measurement repeatability. The optical attenuator effectively expands the detection dynamic range, prevents damage to the detector from strong light, and enhances the device's adaptability to different laser powers. This invention features a simple structure, convenient assembly and disassembly, easy debugging and maintenance, and strong system stability and high reliability.

[0049] 7. The present invention provides a laser detection method that can accurately obtain the parameters of the laser to be measured, and the system is simple and highly versatile. Attached Figure Description

[0050] Figure 1 This is a front view cross-section of a first embodiment of a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to the present invention.

[0051] Figure 2 for Figure 1 The left view;

[0052] Figure 3 for Figure 1 The right view;

[0053] Figure 4 This is a circuit connection diagram of an InGaAs chip, current-voltage conversion circuit, and conditioning circuit, representing a compact InGaAs detector with built-in current-voltage conversion and conditioning circuit according to an embodiment of the present invention.

[0054] Figure 5 This is a structural block diagram of a laser detection device according to a first embodiment of the present invention;

[0055] Figure 6 This is a graph showing the change of response voltage with laser power density in step S6 of an embodiment of the laser detection method of the present invention.

[0056] Figure 7 This is a front cross-sectional view of a second embodiment of a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to the present invention.

[0057] Figure 8 for Figure 7Top view;

[0058] Figure 9 for Figure 7 The bottom view.

[0059] The annotations in the attached figures are explained as follows:

[0060] 1-Housing, 2-Optical window, 3-InGaAs chip, 4-Current-to-voltage conversion circuit, 5-Conditioning circuit, 6-Separator, 7-Aperture, 8-Aperture opening, 9-Power supply pin, 10-Ground pin, 11-Signal output pin; 12-Laser, 13-Optical attenuator, 14-Detector, 15-Optical attenuator fixture, 16-Detector fixture, 17-Four-dimensional displacement stage, 18-DC power supply, 19-Oscilloscope. Detailed Implementation

[0061] To make the objectives, advantages, and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Those skilled in the art should understand that these embodiments are merely used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0062] Example 1

[0063] like Figure 1 As shown, this embodiment provides a compact InGaAs detector with built-in current-to-voltage conversion and conditioning circuitry, including a housing 1, an optical window 2, an InGaAs chip 3, a current-to-voltage conversion circuit 4, a conditioning circuit 5, an aperture 7, a power supply pin 9, a ground pin 10, and a signal output pin 11. In this embodiment, the housing 1 is packaged in a TO package or a variant thereof, such as... Figure 1-3 As shown, it uses a TO46 package.

[0064] The housing 1 includes a cylindrical cap and a base; the back end of the cap is mounted on the inner side of the base, and the light-facing end has an opening coaxial with the cap. The height of the cap and base is d1, which is 2.7±0.1mm. The material of the housing 1 is not limited; in this embodiment, Kovar alloy is used. The sealing welding process for the cap and base is not limited; in this embodiment, energy storage welding is used. The diameter of the cap is d2, which is 4.7±0.1mm. The opening on the cap is circular, with a diameter of d3, which is 2.5±0.1mm. The diameter of the base is d4, which is 5.4±0.1mm.

[0065] like Figure 1 , Figure 2As shown, power pin 9, ground pin 10, and signal output pin 11 are located on the outer side of the base, and the connection points of the three pins on the outer side of the base form an isosceles right triangle. The diameter of power pin 9, ground pin 10, and signal output pin 11 is d6, and the material is not limited. In this embodiment, the material is copper, used for power supply, grounding, and signal transmission, and d6 is 0.45±0.05mm. The center distance between power pin 9 and ground pin 10 is d9, and d9 is 2.54±0.05mm.

[0066] like Figure 1 , Figure 3 As shown, the optical window 2 is welded to the inside of the cap opening, forming an airtight cavity with the cap and base; the optical window 2 is made of quartz or sapphire. The InGaAs chip 3, current-to-voltage conversion circuit 4, conditioning circuit 5, and aperture 7 are all housed within the airtight cavity. A rectangular positioning protrusion is provided on the outer edge of the base for positioning the pins of the detector 14. The rectangular positioning protrusion has a thickness of d5, a width of d7, and a length of d8; d5 is 0.25±0.05mm, d7 is 1.0±0.1mm, and d8 is 0.9±0.1mm.

[0067] like Figure 1 , Figure 4 As shown, the InGaAs chip 3, current-to-voltage conversion circuit 4, and conditioning circuit 5 are all located on the inner side of the base; adhesive is applied to the light-facing surfaces of the current-to-voltage conversion circuit 4 and the conditioning circuit 5 for reinforcement and light shielding. The InGaAs chip 3 converts the optical signal into a current signal, with a response spectrum range of 0.9~1.7μm. The negative terminal of the InGaAs chip 3 is connected to the power supply pin 9, and the positive terminal, as the output terminal, is connected to the current-to-voltage conversion circuit 4 via a gold wire. The current-to-voltage conversion circuit 4 converts the current signal into a voltage signal. The current-to-voltage conversion circuit 4 includes a resistor R and a capacitor C connected in parallel. One end of the resistor R and capacitor C is connected to the positive terminal of the InGaAs chip 3, and the other end is connected to the ground pin 10. The capacitor C has a capacitance of 10pF and is used for signal filtering. The resistor R is used to convert the input current into voltage, and its resistance value is determined by the measured dynamic range.

[0068] Conditioning circuit 5 includes an operational amplifier chip, specifically an OPA4990 in this embodiment. The non-inverting input of the operational amplifier chip is connected to one end of the resistor R and capacitor C to receive the voltage signal; the inverting input is connected to the signal output to form a voltage follower, used for voltage signal conditioning, buffering, and impedance transformation; the signal output of the operational amplifier chip is connected to signal output pin 11 to output the conditioning signal Vout; the positive terminal of the operational amplifier chip is connected to power supply pin 9, and the negative terminal is connected to ground pin 10. The various electronic components of the current-to-voltage conversion circuit 4 and the conditioning circuit 5 are connected by gold wires.

[0069] An aperture 7 is positioned parallel between the light window 2 and the InGaAs chip 3 to block light; an aperture opening 8 is provided at the center of the aperture 7; the diameter of the aperture opening 8 is the same as the diagonal length of the InGaAs chip 3.

[0070] The present invention also provides a laser detection device, such as... Figure 5 As shown, it includes a detector 14, a detector fixture 16, a four-dimensional displacement stage 17, a DC power supply 18, an oscilloscope 19, an optical attenuator 13, an optical attenuator fixture 15, and a laser 12.

[0071] The laser 12 is used to emit laser light. The optical attenuator 13 and the detector 14 are placed sequentially along the laser light path. The optical attenuator 13 is located on the side of the detector 14 facing the light.

[0072] Optical attenuator 13 is fixed to optical attenuator fixture 15. Detector 14 is a compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry as described above. Detector 14 is fixed to a four-dimensional displacement stage 17 via detector fixture 16, with its light-facing surface facing optical attenuator 13.

[0073] Power pin 9 is connected to the positive terminal of DC power supply 18 via a wire; the supply voltage range of DC power supply 18 is 4.5~15V, the specific value of which is determined by the dynamic range of the laser under test. Signal output pin 11 is connected to the signal input terminal of oscilloscope 19 via a wire; ground pin 10 is connected to the negative terminal of DC power supply 18 and the ground terminal of oscilloscope 19 via wires.

[0074] Based on the laser detection device described above, the present invention also provides a laser detection method, comprising the following steps:

[0075] S1. Determine the resistance value r of resistor R in current-to-voltage conversion circuit 4 according to the measurement requirements of the laser under test, connect it to current-to-voltage conversion circuit 4, and complete the hermetically sealed packaging.

[0076] S2. Based on the current signal output from the InGaAs chip 3 irradiated by the laser under test and the resistance value r determined in step S1, calculate the conditioning signal Vout, Vout=Ip•r, where Ip is the current value of the current signal.

[0077] Set the output voltage of DC power supply 18 to be greater than the conditioning signal Vout;

[0078] S3. Turn on the oscilloscope 19 and the DC power supply 18, and stabilize the output voltage of the DC power supply 18.

[0079] S4. Turn on the laser 12 and output the laser beam through the optical attenuator 13 to irradiate the optical window 2.

[0080] S5. Adjust the four-dimensional displacement stage 17 and observe the response voltage of the oscilloscope 19 until the response voltage of the oscilloscope 19 reaches its maximum value, then lock the four-dimensional displacement stage 17.

[0081] S6. Adjust the power of the laser output from laser 12, gradually increasing it from the lowest power to the highest power, while recording the power of laser 12 and the reading of oscilloscope 19 to obtain power density-response voltage calibration data.

[0082] Plot the response voltage as a function of laser power density based on the power density-response voltage calibration data. For example... Figure 6 As shown, the normal trend of the curve is that the response voltage initially increases linearly with the increase of laser power density, until the laser power density reaches a certain value, at which point the response voltage no longer increases and gradually flattens out. At this point, the compact InGaAs detector with built-in current-voltage conversion and conditioning circuit of the present invention is saturated.

[0083] S7. Replace laser 12 with the laser under test. Following step S5, adjust and lock the four-dimensional displacement stage 17. Read the response voltage of the laser under test using oscilloscope 19. Based on the curve of response voltage versus laser power density, obtain the corresponding power density of the laser under test and complete the laser detection.

[0084] Example 2

[0085] The difference between this embodiment and Embodiment 1 is that it includes a housing 1, a light window 2, an InGaAs chip 3, a current-to-voltage conversion circuit 4, a conditioning circuit 5, a power supply pin 9, a ground pin 10, and a signal output pin 11. For example... Figure 7 , Figure 8 As shown, the housing 1 is a cube, and a partition 6 with a central opening is provided on the inner wall of the cap. The InGaAs chip 3 is mounted on the side of the partition 6 near the light window 2. Figure 9 As shown, in this embodiment, the housing 1 is packaged as a surface mount package.

[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the present invention.

Claims

1. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry, characterized in that: Includes housing (1), light window (2), InGaAs chip (3), current-to-voltage conversion circuit (4), conditioning circuit (5), power supply pin (9), ground pin (10), and signal output pin (11). The housing (1) includes a cap and a base; the backlight end of the cap is installed on the inner side of the base, and the light-facing end has an opening coaxial with the cap; the power pin (9), ground pin (10), and signal output pin (11) are located on the outer side of the base. The light window (2) is set at the opening of the tube cap, forming an airtight cavity with the tube cap and the base; The InGaAs chip (3), current-to-voltage conversion circuit (4) and conditioning circuit (5) are all housed in an airtight cavity, and the current-to-voltage conversion circuit (4) and conditioning circuit (5) are mounted on the inner side of the base. The InGaAs chip (3) is used to convert optical signals into current signals. Its output terminal is connected to the current-to-voltage conversion circuit (4) through a gold wire. The current-to-voltage conversion circuit (4) is used to convert current signals into voltage signals. The input terminal of the conditioning circuit (5) is connected to the output terminal of the current-to-voltage conversion circuit (4) to condition the voltage signal and output the conditioning signal Vout. The output terminal of the conditioning circuit (5) is connected to the signal output pin (11) through a gold wire. The power supply and ground terminals of the InGaAs chip (3), current-to-voltage conversion circuit (4) and conditioning circuit (5) are connected to the power supply pin (9) and ground pin (10) respectively via gold wires.

2. The compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 1, characterized in that: The current-to-voltage conversion circuit (4) includes a resistor R and a capacitor C connected in parallel. One end of the resistor R is connected to the positive terminal of the InGaAs chip (3), and the other end is connected to the ground pin (10). The negative terminal of the InGaAs chip (3) is connected to the power supply pin (9). The conditioning circuit (5) includes an operational amplifier chip. The non-inverting input terminal of the operational amplifier chip is connected to one end of a resistor R to receive a voltage signal. The inverting input terminal of the operational amplifier chip is connected to the signal output terminal to form a voltage follower for voltage signal conditioning, buffering, and impedance transformation. The positive terminal of the operational amplifier chip is connected to the power supply pin (9), and the negative terminal is connected to the ground pin (10). The signal output terminal of the operational amplifier chip is connected to the signal output pin (11) to output the conditioning signal Vout. The formula for calculating the conditioning signal Vout is: Vout = Ip•r; where Ip is the current value of the current signal and r is the resistance value of the resistor R. The resistor R, capacitor C, and operational amplifier chip are coated with adhesive on their light-facing outer surfaces for fixation and light shielding.

3. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 2, characterized in that: The inner wall of the tube cap is provided with a partition (6) with a central opening, and the InGaAs chip (3) is installed on the side of the partition (6) near the light window (2).

4. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 2, characterized in that: The InGaAs chip (3) is mounted on the inner side of the base; It also includes an aperture (7), which is arranged parallel between the light window (2) and the InGaAs chip (3); an aperture opening (8) is provided at the center of the aperture (7); the diameter of the aperture opening (8) is the same as the diagonal length of the InGaAs chip (3).

5. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 3 or 4, characterized in that: The response spectrum of the InGaAs chip (3) is in the range of 0.9~1.7μm; The capacitor C has a capacitance of 10pF and is used for signal filtering; The resistor R is used to convert the input current into voltage; A rectangular positioning protrusion is provided on the outer edge of the base to locate the position of the detector pins; The light window (2) is made of quartz or white gemstone.

6. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 2, characterized in that: The housing (1) is packaged in a TO package.

7. A compact InGaAs detector with built-in current-voltage conversion and conditioning circuitry according to claim 3, characterized in that: The housing (1) is packaged in a surface mount package.

8. A laser detection device, characterized in that: Includes detector (14), detector fixture (16), four-dimensional displacement stage (17), DC power supply (18), oscilloscope (19), optical attenuator (13), optical attenuator fixture (15), and laser (12). The detector (14) is a compact InGaAs detector with a built-in current-voltage conversion and conditioning circuit as described in any one of claims 1-7; The laser (12) is used to emit laser light. The optical attenuator (13) and the detector (14) are placed sequentially along the laser light path. The optical attenuator (13) is located on the side of the light-facing surface of the detector (14). The detector (14) is fixed on the four-dimensional displacement stage (17) by the detector clamp (16), and its light-facing surface faces the optical attenuator (13). The power supply pin (9) is connected to the positive terminal of the DC power supply (18) via a wire; the signal output pin (11) is connected to the signal input terminal of the oscilloscope (19) via a wire; the ground pin (10) is connected to the negative terminal of the DC power supply (18) and the ground terminal of the oscilloscope (19) via wires respectively. The optical attenuator (13) is fixed on the optical attenuator fixture (15).

9. A laser detection method, based on the laser detection device according to claim 8, characterized in that, Includes the following steps: S1. Determine the resistance value r of resistor R in current-voltage conversion circuit (4) according to the measurement requirements of the laser to be tested, connect it to current-voltage conversion circuit (4), and complete the hermetically sealed packaging; S2. Calculate the conditioning signal Vout based on the current signal output by the laser irradiation InGaAs chip (3) and the resistance value r determined in step S1; set the output voltage of the DC power supply (18) to be greater than the conditioning signal Vout. S3. Turn on the oscilloscope (19) and DC power supply (18) and stabilize the output voltage of DC power supply (18); S4. Turn on the laser (12) and output laser light through the optical attenuator (13) to irradiate the optical window (2). S5. Adjust the four-dimensional displacement stage (17) and observe the response voltage of the oscilloscope (19) until the response voltage of the oscilloscope (19) is at its maximum value, and lock the four-dimensional displacement stage (17). S6. Adjust the power of the laser output by the laser (12) from the lowest power to the highest power, and record the power of the laser (12) and the reading of the oscilloscope (19) at the same time to obtain the power density-response voltage calibration data; plot the response voltage change curve with laser power density based on the power density-response voltage calibration data. S7. Replace the laser (12) with the laser to be tested, adjust the four-dimensional displacement stage (17) according to the method in step S5 and lock it; read the response voltage of the laser to be tested through the oscilloscope (19), obtain the power density corresponding to the laser to be tested according to the curve of response voltage changing with laser power density, and complete the laser detection.

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