Gallium nitride-based semiconductor laser with quantum tunneling hole injection layer

Abstract

The invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, the quantum tunneling hole injection layer is arranged in the laser, and SIMS test Al ion strength or Al atom concentration distribution in the quantum tunneling hole injection layer has asymmetric double-S-type function distribution. A peak value region of valence band effective state density and a valley value region of hole mobility are formed in the quantum tunneling hole injection layer, and the peak value position of the valence band effective state density just corresponds to the valley value position of the hole mobility, so that a quantum tunneling region is formed, and diffusion, migration and hot electron emission of hole carriers are blocked. The hole tunneling probability of the layer is enhanced, hole carriers are made to jump and pass through the upper limiting layer and the upper waveguide layer in a quantum tunneling mode, hole wave function distribution and light field distribution injected into the active layer are regulated and controlled, the quantum recombination efficiency of the gallium nitride laser is enhanced, light absorption loss is reduced, and the threshold value and the lasing power of the laser are reduced; and the aging light attenuation of the laser is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and more particularly to a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers and nitride semiconductor light-emitting diodes (LEDs) differ significantly: 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are generated by spontaneous emission. The output power of a single light-emitting diode is in the mW range. 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes. This results in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect. 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon. 4) Different principles: Light emission diodes emit light by electrons and holes jumping to the active layer or pn junction under the action of external voltage to generate radiative recombination, while lasers require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0004] Nitride semiconductor lasers suffer from the following problems: p-type semiconductors have high Mg acceptor activation energy (greater than 160 meV) and low ionization efficiency (below 10%). Hole concentration is much lower than electron concentration, and hole mobility is much lower than electron mobility. Furthermore, the quantum well polarization electric field raises the hole injection barrier, and holes overflow from the active layer. Hole injection is uneven and inefficient, leading to severe electron-hole asymmetry and mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, and resulting in uneven carrier injection and gain. Summary of the Invention

[0005] To address one of the aforementioned technical problems, this invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer.

[0006] A first aspect of this invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, and a contact layer. The upper confinement layer includes a first upper confinement layer and a second upper confinement layer, with the first upper confinement layer located below the second upper confinement layer. A quantum tunneling hole injection layer is disposed between the first upper confinement layer and the second upper confinement layer, and the SIMS test of the quantum tunneling hole injection layer for Al ion intensity or Al atom concentration exhibits an Asym2Sig function distribution: y = y0 + A(1 / (1 + exp(-(xx)). c +w1 / 2) / w2)))*(1-1(1+exp(-(xx c -w1 / 2)w3))), where x is the thickness of the quantum tunneling hole injection layer, y0 is the baseline offset, and A is the amplitude of the function. c w1 is the center position parameter, w2 is the width-related parameter, w3 is the slope parameter of the left S-curve, and w4 is the slope parameter of the right S-curve.

[0007] Preferably, neither the first upper confinement layer nor the upper waveguide layer is doped with Mg, and the Mg doping concentration of the second upper confinement layer and the quantum tunneling hole injection layer is 1E18cm⁻¹. -3 Up to 1E20cm -3 .

[0008] Preferably, in the Asym2Sig function, 0 ≤ y ≤ 20, and 0.01 ≤ x c ≤10, 0.1≤A≤50, 0.001≤w1≤1, 0.00001≤w2≤0.1, 0.00005≤w3≤0.5.

[0009] Preferably, the quantum tunneling hole injection layer is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN, and the thickness of the quantum tunneling hole injection layer is from 0.2 nm to 200 nm. The substrate is a GaN single crystal substrate; The lower confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The upper confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The lower waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The upper waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The contact layer is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer is an InGaN / GaN quantum well.

[0010] Preferably, the valence band effective state density distribution of the quantum tunneling hole injection layer has an Asym2Sig function distribution.

[0011] A second aspect of this invention provides a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, and a contact layer. A quantum tunneling hole injection layer is disposed between the upper waveguide layer and the upper confinement layer, and the SIMS measured Al ion intensity or Al atom concentration of the quantum tunneling hole injection layer has a Poly function distribution: y = a0 + a1*x + a2*x^2 + a3*x^3 + a4*x^4 + a5*x^5 + a6*x^6 + a7*x^7 + a8*x^8 + a9*x^9 Where x is the thickness of the quantum tunneling hole injection layer, a0 is a constant term, a1 is the coefficient of the first term, and a2, a3, a4, a5, a6, a7, a8, and a9 are the coefficients of the second to ninth terms.

[0012] Preferably, the upper waveguide layer is undoped with Mg, and the Mg doping concentration of the upper confinement layer and the quantum tunneling hole injection layer is 5E17cm⁻¹. -3 Up to 1E21cm -3 .

[0013] Preferably, in the Poly function, -20≤a0≤20, 0≤a1≤50, -30≤a2≤30, 0≤a3≤20, -20≤a4≤20, 0≤a5≤30, -30≤a6≤30, 0≤a7≤20, -60≤a8≤60, and 0≤a9≤10; Alternatively, 0≤a0≤20, -10≤a1≤10, 0≤a2≤20, -30≤a3≤30, 0≤a4≤30, -20≤a5≤20, 20≤a6≤20, -20≤a7≤20, 0≤a8≤20, -60≤a9≤60.

[0014] Preferably, the quantum tunneling hole injection layer is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN, and the thickness of the quantum tunneling hole injection layer is from 0.2 nm to 200 nm. The substrate is a GaN single crystal substrate; The lower confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The upper confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The lower waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The upper waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The contact layer is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer is an InGaN / GaN quantum well.

[0015] Preferably, the valence band effective state density distribution of the quantum tunneling hole injection layer has a Poly function distribution.

[0016] The beneficial effects of this invention are as follows: This invention sets up a quantum tunneling hole injection layer in a laser, and designs the distribution of Al ion intensity or Al atom concentration in the quantum tunneling hole injection layer for SIMS testing to have an asymmetric double S-shaped function distribution. This results in the formation of a peak region of the effective valence band density of states and a valley region of the hole mobility in the quantum tunneling hole injection layer. The peak position of the effective valence band density of states corresponds exactly to the valley position of the hole mobility, thus forming a quantum tunneling region. This blocks the diffusion, migration, and hot electron emission of hole carriers, enhances the hole tunneling probability of the layer, and allows hole carriers to jump through the upper confinement layer and the upper waveguide layer in the form of quantum tunneling. This modulates the hole wave function distribution and optical field distribution injected into the active layer, enhances the quantum recombination efficiency of the gallium nitride laser, reduces optical absorption loss, lowers the laser threshold and lasing power, and improves the laser's aging and optical decay. Attached Figure Description

[0017] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1This is a schematic diagram of the structure of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 1 of the present invention; Figure 2 This is a SIMS secondary ion mass spectrum and a schematic diagram of the x and y coordinates of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 1 of the present invention. Figure 3 This is a TEM transmission electron microscope image of the quantum tunneling hole injection layer of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 1 of the present invention. Figure 4 The present invention provides a SIMS test diagram of the Al ion intensity or Al atom concentration distribution of the quantum tunneling hole injection layer of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, as described in this embodiment of the invention, and a fitted Al ion intensity or Al atom concentration distribution diagram. Figure 5 The images show the effective state density distribution of the valence band, hole mobility distribution, and quantum tunneling schematic of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in the embodiments of the present invention. Figure 6 This is a schematic diagram of the structure of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 2 or 3 of the present invention; Figure 7 This is a SIMS secondary ion mass spectrum and a schematic diagram of the x and y coordinates of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 2 of the present invention. Figure 8 This is a TEM image of the quantum tunneling hole injection layer 105 of the second lower waveguide layer of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 2 of the present invention. Figure 9 This is a SIMS test of the Al ion intensity or Al atom concentration distribution of the quantum tunneling hole injection layer of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 2 of the present invention, and a fitted Al ion intensity or Al atom concentration distribution. Figure 10 The diagram shows the effective state density distribution of the valence band, the hole mobility distribution, and a schematic diagram of quantum tunneling in the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 2 of the present invention. Figure 11 This is a SIMS secondary ion mass spectrum and a schematic diagram of the x and y coordinates of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 3 of the present invention. Figure 12This is a SIMS test of the Al ion intensity or Al atom concentration distribution of the quantum tunneling hole injection layer of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 3 of the present invention, and a fitted Al ion intensity or Al atom concentration distribution. Figure 13 The diagram shows the effective state density distribution of the valence band, the hole mobility distribution, and a schematic diagram of quantum tunneling in the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer as described in Embodiment 3 of the present invention.

[0018] Figure label: 100. Substrate; 101. Lower confinement layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Quantum tunneling hole injection layer; 106. Upper confinement layer; 107. Contact layer. 106a, First upper confinement layer; 106b, Second upper confinement layer. Detailed Implementation

[0019] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other. Example 1

[0020] like Figure 1 and Figure 2 As shown, this embodiment proposes a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer. The gallium nitride-based semiconductor laser includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an upper confinement layer 106, and a contact layer 107. In this embodiment, the upper confinement layer 106 has a double-layer structure, including a first upper confinement layer 106a and a second upper confinement layer 106b, with the first upper confinement layer 106a located below the second upper confinement layer 106b. A quantum tunneling hole injection layer 105 is also disposed between the first upper confinement layer 106a and the second upper confinement layer 106b.

[0021] Specifically, such as Figure 3As shown, in this embodiment, the quantum tunneling hole injection layer 105 located between the first upper confinement layer 106a and the second upper confinement layer 106b is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN. The thickness of the quantum tunneling hole injection layer 105 is from 0.2 nm to 200 nm. The SIMS test of the Al ion intensity or Al atom concentration of the quantum tunneling hole injection layer 105 has an Asym2Sig function distribution: y = y0 + A(1 / (1 + exp(-(xx))) c +w1 / 2) / w2)))*(1-1(1+exp(-(xx c -w1 / 2)w3))) Where x is the thickness of the quantum tunneling hole injection layer 105, y0 is the baseline offset, representing the basic background value of the function, and A is the amplitude of the function, representing the maximum response height of the curve. c The center position parameter represents the x-coordinate of the curve's center of symmetry. Asymmetry is determined by w2 and w3. w1 is a width-related parameter used to control the span range of the left and right segments of the curve. w2 is the slope parameter of the left S-curve, determining the speed of the rise of the left half. w3 is the slope parameter of the right S-curve, determining the speed of the fall of the right half.

[0022] In the Asym2Sig function, the values ​​of the parameters mentioned above are as follows: Figure 4 The given information can be limited to the following intervals: 0 ≤ y, 0 ≤ 20, 0.01 ≤ x. c ≤10, 0.1≤A≤50, 0.001≤w1≤1, 0.00001≤w2≤0.1, 0.00005≤w3≤0.5.

[0023] In this embodiment, a quantum tunneling hole injection layer 105 is set in the laser, and the distribution of Al ion intensity or Al atom concentration in the quantum tunneling hole injection layer 105 for SIMS testing is designed to have an asymmetric double S-shaped function distribution. This results in the formation of a peak region of the valence band effective density of states and a valley region of the hole mobility in the quantum tunneling hole injection layer 105, with the peak position of the valence band effective density of states corresponding exactly to the valley position of the hole mobility, thus forming a quantum tunneling region. Figure 5 As shown, the diffusion, migration and hot electron emission of hole carriers are blocked, the hole tunneling probability of the layer is enhanced, and the hole carriers jump through the upper confinement layer 106 and the upper waveguide layer 104 in the form of quantum tunneling. This modulates the hole wave function distribution and optical field distribution injected into the active layer 103, enhances the quantum recombination efficiency of the gallium nitride laser, reduces optical absorption loss, lowers the threshold and lasing power of the laser, and improves the aging and optical decay of the laser.

[0024] In some alternative embodiments, the first upper confinement layer 106a and the upper waveguide layer 104 are both undoped with Mg, while the Mg doping concentration of the second upper confinement layer 106b and the quantum tunneling hole injection layer 105 is 1E18cm⁻¹. -3 Up to 1E20cm -3 .

[0025] In some alternative embodiments, such as Figure 5 As shown, the effective state density distribution of the valence band of the quantum tunneling hole injection layer 105 has an Asym2Sig function distribution.

[0026] In some alternative embodiments, the substrate 100 is a GaN single-crystal substrate; The lower confinement layer 101 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The upper confinement layer 106 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The lower waveguide layer 102 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The upper waveguide layer 104 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The contact layer 107 is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer 103 is an InGaN / GaN quantum well. Example 2

[0027] like Figure 6 and Figure 7 As shown, this embodiment proposes a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an upper confinement layer 106, and a contact layer 107. A quantum tunneling hole injection layer 105 is disposed between the upper waveguide layer 104 and the upper confinement layer 106.

[0028] Specifically, such as Figure 8As shown, in this embodiment, the quantum tunneling hole injection layer 105 located between the first upper confinement layer 106a and the second upper confinement layer 106b is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN. The thickness of the quantum tunneling hole injection layer 105 is from 0.2 nm to 200 nm. The SIMS test of the quantum tunneling hole injection layer 105 shows that the Al ion strength or Al atom concentration has a Poly function distribution: y = a0 + a1*x + a2*x^2 + a3*x^3 + a4*x^4 + a5*x^5 + a6*x^6 + a7*x^7 + a8*x^8 + a9*x^9 Where x is the thickness of the quantum tunneling hole injection layer 105, a0 is a constant term, the y value when x=0, the baseline offset, a1 is the first-order coefficient, used to control the linear trend, and a2, a3, a4, a5, a6, a7, a8, and a9 are the second- to ninth-order coefficients, which control the curvature, higher-order bending, oscillation, and other characteristics of the curve, respectively.

[0029] In the Poly function, the values ​​of the parameters mentioned above are as follows: Figure 9 The range shown can be defined as follows: -20≤a0≤20, 0≤a1≤50, -30≤a2≤30, 0≤a3≤20, -20≤a4≤20, 0≤a5≤30, -30≤a6≤30, 0≤a7≤20, -60≤a8≤60, 0≤a9≤10.

[0030] In this embodiment, a quantum tunneling hole injection layer 105 is set in the laser, and the distribution of Al ion intensity or Al atom concentration in the quantum tunneling hole injection layer 105 for SIMS testing is designed to have an asymmetric double S-shaped function distribution. This results in the formation of a peak region of the valence band effective density of states and a valley region of the hole mobility in the quantum tunneling hole injection layer 105, with the peak position of the valence band effective density of states corresponding exactly to the valley position of the hole mobility, thus forming a quantum tunneling region. Figure 10 As shown, the diffusion, migration and hot electron emission of hole carriers are blocked, the hole tunneling probability of the layer is enhanced, and the hole carriers jump through the upper confinement layer 106 and the upper waveguide layer 104 in the form of quantum tunneling. This modulates the hole wave function distribution and optical field distribution injected into the active layer 103, enhances the quantum recombination efficiency of the gallium nitride laser, reduces optical absorption loss, lowers the threshold and lasing power of the laser, and improves the aging and optical decay of the laser.

[0031] In some alternative embodiments, the upper waveguide layer 104 is undoped with Mg, while the upper confinement layer 106 and the quantum tunneling hole injection layer 105 have a Mg doping concentration of 5E17cm⁻¹. -3 Up to 1E21cm -3 .

[0032] In some alternative embodiments, such as Figure 10 As shown, the effective state density distribution of the valence band of the quantum tunneling hole injection layer 105 has a Poly function distribution.

[0033] In some alternative embodiments, the substrate 100 is a GaN single-crystal substrate; The lower confinement layer 101 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The upper confinement layer 106 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The lower waveguide layer 102 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The upper waveguide layer 104 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The contact layer 107 is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer 103 is an InGaN / GaN quantum well. Example 3

[0034] like Figure 6 and Figure 11 As shown, this embodiment proposes a gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an upper confinement layer 106, and a contact layer 107. A quantum tunneling hole injection layer 105 is disposed between the upper waveguide layer 104 and the upper confinement layer 106.

[0035] Specifically, in this embodiment, the quantum tunneling hole injection layer 105 located between the first upper confinement layer 106a and the second upper confinement layer 106b is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN. The thickness of the quantum tunneling hole injection layer 105 is from 0.2 nm to 200 nm. The SIMS test of the quantum tunneling hole injection layer 105 shows that the Al ion strength or Al atom concentration has a Poly function distribution: y = a0 + a1*x + a2*x^2 + a3*x^3 + a4*x^4 + a5*x^5 + a6*x^6 + a7*x^7 + a8*x^8 + a9*x^9 Where x is the thickness of the quantum tunneling hole injection layer 105, a0 is a constant term, the y value when x=0, the baseline offset, a1 is the first-order coefficient, used to control the linear trend, and a2, a3, a4, a5, a6, a7, a8, and a9 are the second- to ninth-order coefficients, which control the curvature, higher-order bending, oscillation, and other characteristics of the curve, respectively.

[0036] In the Poly function, the values ​​of the parameters mentioned above are as follows: Figure 12 The intervals shown can be defined as follows: 0≤a0≤20, -10≤a1≤10, 0≤a2≤20, -30≤a3≤30, 0≤a4≤30, -20≤a5≤20, 20≤a6≤20, -20≤a7≤20, 0≤a8≤20, -60≤a9≤60.

[0037] In this embodiment, a quantum tunneling hole injection layer 105 is set in the laser, and the distribution of Al ion intensity or Al atom concentration in the quantum tunneling hole injection layer 105 for SIMS testing is designed to have an asymmetric double S-shaped function distribution. This results in the formation of a peak region of the valence band effective density of states and a valley region of the hole mobility in the quantum tunneling hole injection layer 105, with the peak position of the valence band effective density of states corresponding exactly to the valley position of the hole mobility, thus forming a quantum tunneling region. Figure 13 As shown, the diffusion, migration and hot electron emission of hole carriers are blocked, the hole tunneling probability of the layer is enhanced, and the hole carriers jump through the upper confinement layer 106 and the upper waveguide layer 104 in the form of quantum tunneling. This modulates the hole wave function distribution and optical field distribution injected into the active layer 103, enhances the quantum recombination efficiency of the gallium nitride laser, reduces optical absorption loss, lowers the threshold and lasing power of the laser, and improves the aging and optical decay of the laser.

[0038] In some alternative embodiments, the upper waveguide layer 104 is undoped with Mg, while the upper confinement layer 106 and the quantum tunneling hole injection layer 105 have a Mg doping concentration of 5E17cm⁻¹. -3 Up to 1E21cm -3 .

[0039] In some alternative embodiments, such as Figure 13 As shown, the effective state density distribution of the valence band of the quantum tunneling hole injection layer 105 has a Poly function distribution.

[0040] In some alternative embodiments, the substrate 100 is a GaN single-crystal substrate; The lower confinement layer 101 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The upper confinement layer 106 is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness ranging from 500 angstroms to 90,000 angstroms; The lower waveguide layer 102 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The upper waveguide layer 104 is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness ranging from 300 angstroms to 8000 angstroms; The contact layer 107 is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer 103 is an InGaN / GaN quantum well.

[0041] The table below compares the performance of the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer proposed in this embodiment with that of a conventional laser, mainly through comparisons of optical power, optical decay after 1000 hours of aging, internal optical loss, and threshold current density:

[0042] As can be seen from the table above, the gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer proposed in this embodiment improves optical power and reduces 1000H aging optical decay, internal optical loss and threshold current density compared with traditional lasers, and its performance is significantly better than that of traditional lasers.

[0043] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, and a contact layer, characterized in that, The upper confinement layer includes a first upper confinement layer and a second upper confinement layer. The first upper confinement layer is located below the second upper confinement layer. A quantum tunneling hole injection layer is disposed between the first upper confinement layer and the second upper confinement layer. The SIMS test of the quantum tunneling hole injection layer for Al ion intensity or Al atom concentration has an Asym2Sig function distribution: y = y0 + A(1 / (1 + exp(-(xx))) c +w1 / 2) / w2)))*(1-1(1+exp(-(xx c -w1 / 2)w3))), where x is the thickness of the quantum tunneling hole injection layer, y0 is the baseline offset, and A is the amplitude of the function. c w1 is the center position parameter, w2 is the width-related parameter, w3 is the slope parameter of the left S-curve, and w4 is the slope parameter of the right S-curve.

2. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 1, characterized in that, The first upper confinement layer and the upper waveguide layer are undoped with Mg, while the second upper confinement layer and the quantum tunneling hole injection layer have a Mg doping concentration of 1E18cm⁻¹. -3 Up to 1E20cm -3 .

3. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 1, characterized in that, In the Asym2Sig function, 0 ≤ y ≤ 20, 0.01 ≤ x c ≤10, 0.1≤A≤50, 0.001≤w1≤1, 0.00001≤w2≤0.1, 0.00005≤w3≤0.

5.

4. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 1, characterized in that, The quantum tunneling hole injection layer is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN, and the thickness of the quantum tunneling hole injection layer is from 0.2 nm to 200 nm. The substrate is a GaN single crystal substrate; The lower confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The upper confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The lower waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The upper waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The contact layer is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer is an InGaN / GaN quantum well.

5. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 1, characterized in that, The effective state density distribution of the valence band of the quantum tunneling hole injection layer has an Asym2Sig function distribution.

6. A gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper confinement layer, and a contact layer, characterized in that, A quantum tunneling hole injection layer is disposed between the upper waveguide layer and the upper confinement layer, and the SIMS test of the quantum tunneling hole injection layer for Al ion intensity or Al atom concentration has a Poly function distribution: y = a0 + a1*x + a2*x^2 + a3*x^3 + a4*x^4 + a5*x^5 + a6*x^6 + a7*x^7 + a8*x^8 + a9*x^9 Where x is the thickness of the quantum tunneling hole injection layer, a0 is a constant term, a1 is the coefficient of the first term, and a2, a3, a4, a5, a6, a7, a8, and a9 are the coefficients of the second to ninth terms.

7. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 6, characterized in that, The upper waveguide layer is undoped with Mg, and the Mg doping concentration of the upper confinement layer and the quantum tunneling hole injection layer is 5E17cm. -3 Up to 1E21cm -3 .

8. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 6, characterized in that, In the Poly function, -20≤a0≤20, 0≤a1≤50, -30≤a2≤30, 0≤a3≤20, -20≤a4≤20, 0≤a5≤30, -30≤a6≤30, 0≤a7≤20, -60≤a8≤60, 0≤a9≤10; Alternatively, 0≤a0≤20, -10≤a1≤10, 0≤a2≤20, -30≤a3≤30, 0≤a4≤30, -20≤a5≤20, 20≤a6≤20, -20≤a7≤20, 0≤a8≤20, -60≤a9≤60.

9. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 6, characterized in that, The quantum tunneling hole injection layer is any combination of AlGaN, AlN, GaN, AlInN, and AlInGaN, and the thickness of the quantum tunneling hole injection layer is from 0.2 nm to 200 nm. The substrate is a GaN single crystal substrate; The lower confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The upper confinement layer is any combination of GaN, AlGaN, AlN, AlInN, AlInGaN, and InN, with a thickness of 500 angstroms to 90,000 angstroms; The lower waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The upper waveguide layer is any combination of GaN, InGaN, InN, and AlInGaN, with a thickness of 300 angstroms to 8000 angstroms; The contact layer is any combination of GaN, InGaN, AlInN, InN, and AlInGaN; The active layer is an InGaN / GaN quantum well.

10. The gallium nitride-based semiconductor laser with a quantum tunneling hole injection layer according to claim 6, characterized in that, The valence band effective state density distribution of the quantum tunneling hole injection layer has a Poly function distribution.

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