Compact power module and electronic product
By integrating IGBT transistors and topology design into a compact power module, efficient voltage and current specifications and functional integration are achieved in a small space, solving the problem that existing power modules cannot balance size and specifications, and improving safety and stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-31
- Publication Date
- 2026-04-07
AI Technical Summary
Existing power modules cannot simultaneously meet both size and specifications, making it difficult to satisfy voltage and current requirements and achieve more functions within a relatively small space.
Design a compact power module that integrates additional IGBT transistors and corresponding topology design to achieve high-power, low-loss, controllable switching function for pre-charging DC bus capacitors. Through the power conversion circuit and device layout within the package housing, including seven power transistors, six diodes, and a thermistor, a three-phase full-bridge structure is formed, and the bus capacitors are controllably pre-charged during the startup phase.
It achieves three-phase full-bridge and pre-charge functions within a limited space, meets the voltage and current specifications of 1200V 50A, and features small size, low cost, and high specifications, thus improving the safety and stability of the system.
Smart Images
Figure CN121813819A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of integrated circuits, and in particular to a compact power module and electronic product. Background Technology
[0002] Power modules are industrial products composed of power semiconductor devices (such as IGBTs and MOSFETs) combined and encapsulated according to their circuit functions. Their core functions are power conversion and control. They are widely used in new energy vehicle drive systems, photovoltaic inverters, wind power generation converters, and 5G base station power supplies, and are also compatible with inverters, UPS, and other equipment in the consumer electronics, industrial control, and home appliance industries.
[0003] The size and specifications of existing power modules cannot be balanced. Therefore, how to meet voltage and current specifications within a relatively small space and achieve as many functions as possible has become one of the problems that urgently needs to be solved by those skilled in the art.
[0004] It should be noted that the above description of the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of the present invention and facilitating understanding by those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because they have been described in the background section of this invention. Summary of the Invention
[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a compact power module and electronic product to solve the problems of large size and low specifications of power modules in the prior art; at the same time, it integrates additional IGBT transistors and corresponding topology design, thereby realizing the integration of the function of high-power, low-loss controllable switching with DC bus capacitor pre-charge.
[0006] To achieve the above and other related objectives, the present invention provides a compact power module, the compact power module comprising at least:
[0007] The package housing, pins, and power conversion circuit disposed within the package housing;
[0008] The power conversion circuit includes first, second, third, fourth, fifth, sixth, and seventh power transistors, first, second, third, fourth, fifth, and sixth diodes, and a thermistor. The first to sixth power transistors and the six corresponding diodes connected in anti-parallel form a three-phase full-bridge structure. The first end of the upper transistor in each bridge arm is connected together as the DC positive terminal, and the second end of the lower transistor in each bridge arm is respectively the DC negative terminal of the corresponding phase. The first end of the seventh power transistor serves as the pre-charge power input terminal, and the second end is connected to the DC positive terminal of each bridge arm, used to controllably pre-charge the bus capacitor connected in parallel between the DC positive and DC negative terminals during the startup phase. The thermistor detects the operating ambient temperature of each power transistor.
[0009] The DC positive terminal, the DC negative terminals of each phase, the output terminals of each phase, the input terminal of the pre-charge power supply, the driving terminals of each power transistor, and the two ends of the thermistor are respectively led out to the corresponding pins.
[0010] Optionally, the encapsulation housing is provided with a first base island, a second base island, a third base island, a fourth base island, and a fifth base island;
[0011] The first base island, the second base island, the third base island, and the fourth base island are arranged sequentially along the length of the package housing; the first power transistor, the second power transistor, the third power transistor, the first diode, the second diode, and the third diode are disposed on the first base island, the fourth power transistor and the fourth diode are disposed on the second base island, the fifth power transistor and the fifth diode are disposed on the third base island, and the sixth power transistor and the sixth diode are disposed on the fourth base island; wherein, the first to sixth power transistors and their corresponding diodes are respectively disposed on both sides of the corresponding base island in the width direction of the package housing, and the first to sixth power transistors are located on the same side, and all diodes are located on the same side;
[0012] The fifth base island is located outside the first base island and close to the side where the first to sixth power transistors are located; the seventh power transistor is located on the fifth base island.
[0013] The sixth base island is disposed outside the second base island and close to the fourth power transistor; the thermistor is disposed on the sixth base island;
[0014] The first end of each power transistor is located at the bottom and is electrically connected to the corresponding base island; the second end and the driving end of each power transistor are located at the top; the cathode of each diode is located at the bottom and is electrically connected to the corresponding base island; the anode of each diode is located at the top.
[0015] Alternatively, the first end of each power transistor is electrically connected to the corresponding pin based on the corresponding base island; the second end and the drive end of each power transistor are connected to the corresponding port by wire bonding.
[0016] Alternatively, the pins corresponding to the pre-charge power input terminal, the drive terminals of each power transistor, and the two ends of the thermistor are sequentially disposed on the first side of the package housing; the pins corresponding to the DC positive terminal, each phase output terminal, and each phase DC negative terminal are sequentially disposed on the second side of the package housing.
[0017] Alternatively, the first side and the second side of the encapsulation housing are disposed opposite each other, and the first side is the longer side.
[0018] Alternatively, the width of each pin on the first side of the package housing is smaller than the width of each pin on the second side of the package housing.
[0019] Alternatively, the two pins corresponding to the pre-charge power input terminal are grouped together, the two pins corresponding to the drive terminal of the seventh power transistor are grouped together, the two pins corresponding to the drive terminal of the upper transistor in each bridge arm are grouped together, and the pins corresponding to both ends of the thermistor are grouped together; each group of pins is arranged sequentially, and a groove is provided on the package housing between each group of pins.
[0020] Alternatively, the two pins corresponding to the lower tube drive end in each bridge arm are arranged adjacent to each other.
[0021] Alternatively, a fixing hole is provided on the third and fourth sides of the encapsulation housing.
[0022] Alternatively, the length of the encapsulation housing is no greater than 53 mm and the width is no greater than 31.5 mm.
[0023] To achieve the above and other related objectives, the present invention also provides an electronic product, which includes at least the above-described compact power module.
[0024] As described above, the compact power module and electronic product of the present invention have the following beneficial effects:
[0025] The compact power module and electronic product of this invention integrate three-phase full-bridge and pre-charge functions within the limited space of a 29-pin package structure, achieving power conversion while protecting the safety of other devices and components in the system where the power module is located; it also meets the voltage and current specifications of 1200V 50A; and features small size, low cost, and high specifications.
[0026] The compact power module of this invention achieves a balance of stray inductance by forming an internal device layout circuit and ensuring voltage and current specifications within the smallest possible package. At the same time, it reduces stray inductance by using the shortest possible drive circuit. The pin distribution meets the withstand voltage insulation between low voltages, between high voltages and low voltages, between high voltages and high voltages, and current carrying capacity, while also taking into account the layout and wiring requirements of each device. Attached Figure Description
[0027] Figure 1 The diagram shows the circuit structure and pin distribution of a 29-pin power module.
[0028] Figure 2 The diagram shown is a schematic representation of the power conversion circuit of the compact power module of the present invention.
[0029] Figure 3 The diagram shows the package housing and pin distribution of the compact power module of the present invention.
[0030] Figure 4 The diagram shown is a schematic diagram of the device layout of the present invention.
[0031] Component designation explanation
[0032] 100-29 pin power module; 200-package housing; 201-power conversion circuit; 202-fixing hole; 31, 32, 33, 34, 35, 36-first to sixth base islands. Detailed Implementation
[0033] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0034] Please see Figures 1-4 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0035] like Figure 1 The diagram shows a 29-pin power module 100, which integrates a high-end control chip 101, a low-end control chip 102, and six power transistors. The six power transistors form a three-phase full-bridge structure. The high-end control chip 101 provides control signals to the upper transistors of each bridge arm, and the low-end control chip 102 provides control signals to the lower transistors of each bridge arm. It is relatively large in size, has high cost, and does not have a pre-charge function.
[0036] To maintain the basic functionality of a power module within a limited space and achieve the expected voltage and current specifications, while improving the safety and system stability of the power module, this invention provides a compact power module, such as... Figure 2As shown, the compact power module of the present invention includes:
[0037] The package housing 200, the power conversion circuit 201 disposed within the package housing 200, and the pins disposed on the package housing 200.
[0038] like Figure 2 As shown, the power conversion circuit 201 includes seven power transistors (denoted as first power transistor Q1, second power transistor Q2, third power transistor Q3, fourth power transistor Q4, fifth power transistor Q5, sixth power transistor Q6, and seventh power transistor Q7), six diodes (denoted as first diode D1, second diode D2, third diode D3, fourth diode D4, fifth diode D5, and sixth diode D6), and a thermistor NTC.
[0039] Specifically, the first power transistor Q1, the second power transistor Q2, the third power transistor Q3, the fourth power transistor Q4, the fifth power transistor Q5, the sixth power transistor Q6, the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6 constitute a three-phase full-bridge structure. The first power transistor Q1, the second power transistor Q2, and the third power transistor Q3 serve as the upper transistors of each bridge arm, while the fourth power transistor Q4, the fifth power transistor Q5, and the sixth power transistor Q6 serve as the lower transistors of each bridge arm. In this example, each power transistor is implemented using an IGBT (Insulated Gate Bipolar Transistor). Then, the collector of the first power transistor Q1 is connected to the DC positive terminal P, and the emitter is connected to the collector of the fourth power transistor Q4, serving as the U-phase output terminal (Phase U); the emitter of the fourth power transistor Q4 is connected to the U-phase DC negative terminal DC-1; the gate HU_Gate and emitter HU_Emitter of the first power transistor Q1 serve as the driving terminals of the first power transistor Q1, and the gate LU_Gate and emitter LU_Emitter of the fourth power transistor Q4 serve as the driving terminals of the fourth power transistor Q4. The collector of the second power transistor Q2 is connected to the DC positive terminal P, and the emitter is connected to the collector of the fifth power transistor Q5, serving as the V-phase output terminal (Phase V); the emitter of the fifth power transistor Q5 is connected to the V-phase DC negative terminal DC-2; the gate HV_Gate and emitter HV_Emitter of the second power transistor Q2 serve as the driving terminals of the second power transistor Q2, and the gate LV_Gate and emitter LV_Emitter of the fifth power transistor Q5 serve as the driving terminals of the fifth power transistor Q5. The collector of the third power transistor Q3 is connected to the DC positive terminal P, and its emitter is connected to the collector of the sixth power transistor Q6, serving as the W-phase output terminal (Phase W). The emitter of the sixth power transistor Q6 is connected to the W-phase DC negative terminal DC-3. The gate (HW_Gate) and emitter (HW_Emitter) of the third power transistor Q3 serve as the driving terminals for Q3, and the gate (LW_Gate) and emitter (LW_Emitter) of the sixth power transistor Q6 serve as the driving terminals for Q6. The cathodes of each diode are connected to the collectors of the corresponding power transistors, and the anodes are connected to the emitters of the corresponding power transistors, allowing for forward clamping protection of the corresponding power transistors.
[0040] Specifically, the first terminal of the seventh power transistor Q7 serves as the pre-charge input terminal, and the second terminal is connected to the DC positive terminal P. This allows for controlled pre-charging of the bus capacitor (used to reduce voltage ripple at the inverter input, especially in motor drive applications including electric vehicles) connected in parallel between the DC positive terminal and any DC negative terminal. This effectively reduces the charging current during the initial charging phase (start-up phase), controlling the charging current and preventing catastrophic failures caused by sudden current changes, thus protecting the power module and the devices and components within it. In this example, the seventh power transistor Q7 is implemented using an IGBT (or a SiC MOSFET), which offers advantages such as fast switching speed and high control precision. The collector (Q7_Collector-1 and Q7_Collector-2) of the seventh power transistor Q7 serves as the first terminal, the emitter as the second terminal, and the gate (Q7_Gate) and emitter (Q7_Emitter_K) of the seventh power transistor Q7 serve as the driving terminals.
[0041] Specifically, the thermistor NTC is disposed inside the package housing 200 to sense the operating temperature of each power transistor inside the package housing 200. When the operating temperature changes, the resistance value of the thermistor NTC changes accordingly.
[0042] It should be noted that in actual use, the type of each power transistor can be set as needed, including but not limited to bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), and the connection relationship of each port can be adjusted adaptively, which will not be elaborated here.
[0043] like Figure 3 As shown, the DC positive terminal, the DC negative terminal of each phase, the output terminal of each phase, the pre-charge power input terminal, the drive terminal of each power transistor, and the two ends of the thermistor are respectively led out to the corresponding pins.
[0044] Specifically, to achieve the isolation and insulation requirements between the high-voltage and low-voltage pins, in this embodiment, the pre-charge power input terminal, the drive terminals of each power transistor, and both ends of the thermistor NTC are sequentially arranged on the first side of the package housing 200, wherein the pre-charge power input terminal is the high-voltage terminal, and the other ports are low-voltage terminals; the pins corresponding to the DC positive terminal, each phase output terminal, and each phase DC negative terminal are sequentially arranged on the second side of the package housing 200, and each port is a high-voltage terminal. As an example, the first and second sides of the package housing 200 are arranged opposite each other, and both are long sides; in actual use, the first and second sides can also be arranged adjacent to each other, in which case the chip size will increase.
[0045] More specifically, in this embodiment, on the first side of the package housing 200, the collectors (Q7_Collector-1 and Q7_Collector-2) of the seventh power transistor Q7 are led out to the corresponding pins 1 and 2 (the pin width is basically the same as the low-voltage pin width) to meet the high current requirements of the pre-charge power input terminal; the collector of the seventh power transistor Q7 may also correspond to 3 or more pins, which will not be described in detail here; in actual use, the collector of the seventh power transistor Q7 may also be led out to one pin, and the width of this pin must be greater than the width of the low-voltage pin. The emitter Q7_Emitter_K of the seventh power transistor Q7 is led out to pin 3, and the gate Q7_Gate of the seventh power transistor Q7 is led out to pin 4; the emitter HU_Emitter of the first power transistor Q1 is led out to pin 5, and the gate HU_Gate of the first power transistor Q1 is led out to pin 6; the emitter HV_Emitter of the second power transistor Q2 is led out to pin 7, and the gate HV_Gate of the second power transistor Q2 is led out to pin 8; the emitter HW_Emitter of the third power transistor Q3 is led out to pin 9, and the gate HW_Gate of the third power transistor Q3 is led out to pin 10; the thermistor NT The first terminal of the NTC, Thermistor-1, is led out to pin 11; the second terminal of the NTC, Thermistor-2, is led out to pin 12; the emitter LU_Emitter of the fourth power transistor Q4 is led out to pin 13; the gate LU_Gate of the fourth power transistor Q4 is led out to pin 14; the emitter LV_Emitter of the fifth power transistor Q5 is led out to pin 15; the gate LV_Gate of the fifth power transistor Q5 is led out to pin 16; the emitter LW_Emitter of the sixth power transistor Q6 is led out to pin 17; the gate LW_Gate of the sixth power transistor Q6 is led out to pin 18. Additionally, on the second side of the package housing 200, the DC positive terminal P is led out to pin 28, the U-phase output terminal (Phase U) is led out to pin 27, the V-phase output terminal (Phase V) is led out to pin 26, the W-phase output terminal (Phase W) is led out to pin 25, the U-phase DC negative terminal DC-1 is led out to pin 24, the V-phase DC negative terminal DC-2 is led out to pin 23, and the W-phase DC negative terminal DC-3 is led out to pin 22, each corresponding to a high-voltage pin. The width of each high-voltage pin is greater than the width of the low-voltage pin. In actual use, multiple (two or more) pins can also be used to connect to a single high-voltage terminal, which will not be elaborated here. The relative positions of the pins can be adjusted according to actual needs and are not limited to this embodiment.
[0046] Specifically, as an example, such as Figure 3As shown, the two pins 1 and 2 corresponding to the pre-charge power input terminal form a group; the two pins 3 and 4 corresponding to the drive terminal of the seventh power transistor Q7 form a group. The two pins corresponding to the drive terminals of the upper transistors in each bridge arm form a group, i.e., the emitter and gate pins 5 and 6 of the first power transistor Q1 form a group, the emitter and gate pins 7 and 8 of the second power transistor Q2 form a group, and the emitter and gate pins 9 and 10 of the third power transistor Q3 form a group. The two ends of the thermistor NTC, corresponding to pins 11 and 12, form a group. The pins are arranged sequentially, and the spacing between each group meets the creepage requirements. Furthermore, grooves are provided on the package housing 200 between each group of pins (in this example, the groove width is set to 1.1mm~1.3mm) to increase the creepage distance and improve insulation performance.
[0047] Specifically, as an example, such as Figure 3 As shown, the two pins corresponding to the lower drive end of each bridge arm are arranged adjacently, i.e., pins 13 and 14 are adjacent, pins 15 and 16 are adjacent, and pins 17 and 18 are adjacent. In this example, pins 13, 14, 15, 6, 17, and 18 are arranged sequentially, and the spacing meets the low-voltage creepage requirements. In addition, pins 19, 20, and 21 are also provided on the first side of the package housing 200. In this example, pins 19, 20, and 21 are unused. When used in an expanded manner, pins 19, 20, and 21 can be defined as needed, which will not be described in detail here.
[0048] Specifically, such as Figure 3 As shown, the spacing of pins 22, 23, 24, 25, 26, 27, and 28 meets the high-voltage creepage requirements. As an example, the spacing of pins 24, 23, and 22 corresponding to the U-phase DC negative terminal DC-1, V-phase DC negative terminal DC-2, and W-phase DC negative terminal DC-3 is smaller than the spacing of pins 27, 26, and 25 corresponding to the U-phase output terminal (Phase U), V-phase output terminal (Phase V), and W-phase output terminal (Phase W). Furthermore, pin 29 is also provided on the second side of the package housing 200. In this example, pin 29 is unused; it can be defined as needed for expanded applications, and will not be elaborated upon here.
[0049] Specifically, such as Figure 3 As shown, in this example, the length of the encapsulation housing 200 is no greater than 53mm (including but not limited to 52.5mm, 52.2mm, 52mm), and the width is no greater than 31.5mm (including but not limited to 31.1mm, 31mm, 30.8mm).
[0050] In another example, a mounting hole 202 is provided on the third and fourth sides of the package housing 200 for fixing the compact power module.
[0051] like Figure 4The diagram shows the device layout within the packaging housing of the present invention. As an example, the packaging housing 200 includes a first base island 31, a second base island 32, a third base island 33, a fourth base island 34, a fifth base island 35, and a sixth base island 36. The first base island 31, second base island 32, third base island 33, and fourth base island 34 are arranged sequentially along the length of the packaging housing 200. The fifth base island 35 is located outside the first base island 31 and close to the side where each power transistor is located (closer to the first side). The sixth base island 36 is located outside the second base island 32 and close to the fourth power transistor Q4 (closer to the first side).
[0052] Specifically, the first power transistor Q1, the second power transistor Q2, the third power transistor Q3, the first diode D1, the second diode D2, and the third diode D3 are disposed on the first base island 31, that is, the upper transistor and its corresponding diode are disposed on the first base island 31. The fourth power transistor Q4 and the fourth diode D4 are disposed on the second base island 32. The fifth power transistor Q5 and the fifth diode D5 are disposed on the third base island 33. The sixth power transistor Q6 and the sixth diode D6 are disposed on the fourth base island 34. Each power transistor and its corresponding diode are respectively disposed on both sides of the corresponding base island in the width direction of the package housing 200, and each power transistor is located on the same side, and each diode is located on the same side; in this example, each power transistor is closer to the first side relative to its corresponding diode, and each diode is closer to the second side relative to its corresponding power transistor.
[0053] Specifically, the first terminals (collectors in this example) of the first to sixth power transistors (Q1 to Q6) are located at the bottom and electrically connected to their corresponding base islands; the second terminals (emitters in this example) and driving terminals of the first to sixth power transistors (Q1 to Q6) are located at the top; the cathodes of each diode are located at the bottom and electrically connected to their corresponding base islands; and the anodes of each diode are located at the top. Therefore, the first base island 31 serves as the DC positive terminal P connected to the corresponding pin 28, the second base island 32 serves as the U-phase output terminal (Phase U) connected to the corresponding pin 27, the third base island 33 serves as the V-phase output terminal (Phase V) connected to the corresponding pin 26, and the fourth base island 34 serves as the W-phase output terminal (Phase W) connected to the corresponding pin 25. The second terminal and driving terminal (and the anode of the first diode D1) of the first power transistor Q1 are connected to the corresponding pins 27, 5, and 6 via wire bonding. The second terminal and driving terminal (and the anode of the second diode D1) of the second power transistor Q2 are connected to the corresponding pins 26, 7, and 8 via wire bonding. The second terminal and driving terminal (and the anode of the third diode D3) of the third power transistor Q3 are connected to the corresponding pins 25, 9, and 10 via wire bonding. The second terminal and driving terminal (and the anode of the fourth diode D4) of the fourth power transistor Q4 are connected to the corresponding pins 24, 13, and 14 via wire bonding. The second terminal and driving terminal (and the anode of the fifth diode D5) of the fifth power transistor Q5 are connected to the corresponding pins 23, 15, and 16 via wire bonding. The second terminal and driving terminal (and the anode of the sixth diode D6) of the sixth power transistor Q6 are connected to the corresponding pins 22, 17, and 18 via wire bonding.
[0054] Specifically, the seventh power transistor Q7 is disposed on the fifth base island 35, with its first end located at the bottom and electrically connected to the fifth base island 35; the second end and the drive end are located at the top. The fifth base island 35 is led out to the corresponding pins 1 and 2 via wire bonding; the second end of the seventh power transistor Q7 is connected to the first base island 31 via wire bonding, and the drive end is led out to the corresponding pins 3 and 4 via wire bonding.
[0055] Specifically, the thermistor NTC is located on the sixth base island 36; as an example, the two ends of the thermistor NTC are led out to the corresponding pins 11 and 12 through the sixth base island 36 and the bonding wire, respectively.
[0056] This invention balances circuit formation and voltage and current specifications through the layout of internal components, while minimizing stray inductance with the shortest possible drive circuit, thus achieving stray inductance balance; and achieves insulation withstand voltage and facilitates heat dissipation in conjunction with the external pin arrangement.
[0057] The compact power module of this invention achieves three-phase full-bridge and pre-charge functions within the limited space of a 29-pin package structure (with pins on only two long sides), while meeting the 1200V 50A specification; it features small size, low cost, and high specifications.
[0058] The compact power module of this invention enables centralized control and drive, and while being more efficient and controllable, it further reduces the influence of stray inductance in the system circuit, making the overall system safer.
[0059] The present invention also provides an electronic product comprising the compact power module of the present invention for realizing power conversion (e.g., inversion). This electronic product includes, but is not limited to, drive components, motors, or motorized equipment, which will not be elaborated upon here.
[0060] In summary, this invention provides a compact power module and electronic product, comprising: a package housing, pins, and a power conversion circuit disposed within the package housing; wherein, the power conversion circuit includes seven power transistors, six diodes, and a thermistor; the six power transistors and the six diodes corresponding to them and connected in antiparallel form a three-phase full-bridge structure, with the DC positive terminals of each bridge arm connected together; the first terminal of the seventh power transistor serves as a pre-charge power input terminal, and the second terminal is connected to the DC positive terminal of each bridge arm, used to controllably pre-charge the bus capacitor connected in parallel between the DC positive and DC negative terminals during the startup phase; the thermistor detects the operating ambient temperature of each power transistor; the DC positive terminal, the DC negative terminals of each phase, the output terminals of each phase, the pre-charge power input terminal, the drive terminals of each power transistor, and the two ends of the thermistor are respectively led out to the corresponding pins. The compact power module and electronic product of this invention integrate a three-phase full-bridge and pre-charge function within the limited space of a 29-pin package structure, while meeting the voltage and current specifications of 1200V 50A. It features small size, low cost, high specifications, and balanced stray inductance, and effectively improves safety. Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.
[0061] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. A compact power module, characterized in that, The compact power module includes at least: The package housing, pins, and power conversion circuit disposed within the package housing; The power conversion circuit includes first, second, third, fourth, fifth, sixth, and seventh power transistors, first, second, third, fourth, fifth, and sixth diodes, and a thermistor. The first to sixth power transistors and the six corresponding diodes connected in anti-parallel form a three-phase full-bridge structure. The first end of the upper transistor in each bridge arm is connected together as the DC positive terminal, and the second end of the lower transistor in each bridge arm is respectively the DC negative terminal of the corresponding phase. The first end of the seventh power transistor is used as the pre-charge power input terminal, and the second end is connected to the DC positive terminal of each bridge arm, which is used to controllably pre-charge the bus capacitor connected in parallel between the DC positive and DC negative terminals during the startup phase. The thermistor detects the operating ambient temperature of each power transistor. The DC positive terminal, the DC negative terminals of each phase, the output terminals of each phase, the input terminal of the pre-charge power supply, the driving terminals of each power transistor, and the two ends of the thermistor are respectively led out to the corresponding pins.
2. The compact power module according to claim 1, characterized in that: The encapsulation housing is provided with a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; The first base island, the second base island, the third base island, and the fourth base island are arranged sequentially along the length of the package housing; the first power transistor, the second power transistor, the third power transistor, the first diode, the second diode, and the third diode are disposed on the first base island, the fourth power transistor and the fourth diode are disposed on the second base island, the fifth power transistor and the fifth diode are disposed on the third base island, and the sixth power transistor and the sixth diode are disposed on the fourth base island; wherein, the first to sixth power transistors and their corresponding diodes are respectively disposed on both sides of the corresponding base island in the width direction of the package housing, and the first to sixth power transistors are located on the same side, and all diodes are located on the same side; The fifth base island is located outside the first base island and close to the side where the first to sixth power transistors are located; the seventh power transistor is located on the fifth base island. The sixth base island is disposed outside the second base island and close to the fourth power transistor; the thermistor is disposed on the sixth base island; The first end of each power transistor is located at the bottom and is electrically connected to the corresponding base island; the second end and the driving end of each power transistor are located at the top; the cathode of each diode is located at the bottom and is electrically connected to the corresponding base island; the anode of each diode is located at the top.
3. The compact power module according to claim 2, characterized in that: The first end of each power transistor is electrically connected to the corresponding pin based on the corresponding base island; the second end and the drive end of each power transistor are connected to the corresponding port via a wire bonding.
4. The compact power module according to any one of claims 1-3, characterized in that: The pins corresponding to the pre-charge power input terminal, the driving terminals of each power transistor, and the two ends of the thermistor are sequentially arranged on the first side of the package housing; the pins corresponding to the DC positive terminal, each phase output terminal, and each phase DC negative terminal are sequentially arranged on the second side of the package housing.
5. The compact power module according to claim 4, characterized in that: The first and second sides of the encapsulation housing are arranged opposite each other, and the first side is the longer side.
6. The compact power module according to claim 4, characterized in that: The width of each pin on the first side of the packaging housing is smaller than the width of each pin on the second side of the packaging housing.
7. The compact power module according to claim 4, characterized in that: The two pins corresponding to the input terminal of the pre-charge power supply are grouped together, the two pins corresponding to the driving terminal of the seventh power transistor are grouped together, the two pins corresponding to the driving terminal of the upper transistor in each bridge arm are grouped together, and the pins corresponding to both ends of the thermistor are grouped together; each group of pins is arranged sequentially, and the package housing between each group of pins is provided with a groove.
8. The compact power module according to claim 7, characterized in that: The two pins corresponding to the lower tube drive end of each bridge arm are set adjacent to each other.
9. The compact power module according to claim 4, characterized in that: A fixing hole is provided on the third and fourth sides of the encapsulation housing.
10. The compact power module according to any one of claims 1-3, characterized in that: The length of the encapsulation shell is no greater than 53mm and the width is no greater than 31.5mm.
11. An electronic product, characterized in that, The electronic product includes at least: a compact power module as described in any one of claims 1-10.