Perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a perovskite solar cell and a preparation method and application thereof, and relates to the technical field of perovskite cells. According to the perovskite solar cell, the sub-cell units and the re-wiring layer are arranged on the two opposite surfaces of the substrate respectively, then electrical connection is achieved through the TGV interconnection unit, an electrical interconnection path of the perovskite solar cell is changed from a traditional two-dimensional plane layout to a three-dimensional vertical layout, shielding of an effective light receiving area is reduced, and the efficiency of the perovskite solar cell is improved. In addition, the TGV interconnection unit is completely wrapped by the glass substrate, a natural airtight packaging channel is formed, and degradation of the perovskite material is effectively delayed. And meanwhile, the material in the TGV through hole is not limited by light transmission, and a high-conductivity metal material can be used, so that the resistance loss of the battery is reduced. According to the structure, series connection, parallel connection or mixed connection among the sub-battery units can be realized through the rewiring layer, and the product is endowed with high design flexibility.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cell technology, and more specifically, to a perovskite solar cell, its fabrication method, and its application. Background Technology

[0002] Perovskite solar cells, representing third-generation photovoltaic technology, have broad application prospects in building-integrated photovoltaics (BIPV) and wearable devices due to their excellent photoelectric performance and low-cost solution processing characteristics. Compared to traditional crystalline silicon cells, perovskite solar cells can be formed using low-temperature processes, avoiding material damage caused by high-temperature processes. However, modular integration has become a major bottleneck in the industrialization of perovskite solar cells.

[0003] Existing monolithic integration technologies for perovskite solar cells mostly employ laser scribing to achieve series connection of sub-cells. While this avoids the problems of high-temperature welding, it suffers from significant dead zone losses, a sharp increase in series resistance with increasing area, and a narrow etching process window for multi-layer structures, resulting in module efficiency far lower than that of a single cell. Furthermore, perovskite materials are extremely sensitive to water and oxygen, and the complex interconnect structure within the module easily becomes a weak point for environmental corrosion. Existing encapsulation technologies struggle to meet long-term stability requirements, especially under high-temperature and high-humidity conditions, where electrode corrosion and material degradation are prone to occur. In addition, increased device operating temperature accelerates the aging of perovskite solar cell materials.

[0004] In view of this, the present invention is proposed. Summary of the Invention

[0005] The purpose of this invention is to provide a perovskite solar cell, its preparation method, and its application.

[0006] This invention is implemented as follows: In a first aspect, the present invention provides a perovskite solar cell, comprising a substrate, a redistribution layer, and sub-cell units; the redistribution layer and the sub-cell units are respectively located on two opposite surfaces of the substrate.

[0007] Multiple sets of TGV interconnect units are disposed on the substrate. Each sub-cell unit is disposed in relation to a set of TGV interconnect units. Each set of TGV interconnect units includes at least one pair of TGV vias. Each pair of TGV vias includes a first TGV via and a second TGV via. Each TGV via is filled with conductive material.

[0008] The sub-cell includes a positive electrode, a negative electrode, and a perovskite functional layer. The positive electrode is electrically connected to a first TGV via, and the negative electrode is electrically connected to a second TGV via. The perovskite functional layer is located between the positive electrode and the negative electrode.

[0009] The rewiring layer wires connect multiple TGV interconnect units in series and / or in parallel.

[0010] The above structural design transforms the electrical interconnection path of perovskite solar cells from a traditional two-dimensional planar layout to a three-dimensional vertical layout, increasing the effective light-receiving area of ​​the cells, reducing resistance loss, and improving heat dissipation and sealing performance. The series and parallel connection methods of sub-cell units can be flexibly designed.

[0011] In an optional embodiment, the diameter of each TGV through hole is 10~100μm, the center-to-center distance between two adjacent pairs of first TGV through holes is 50~200μm, and the center-to-center distance between two adjacent pairs of second TGV through holes is 50~200μm.

[0012] And / or, the shape of the TGV through-hole includes at least one of the following: tapered, cylindrical, or having an arc-shaped inner wall.

[0013] The parameters provided above for controlling the TGV vias can balance the mechanical and electrical properties of perovskite solar cells while reducing lateral current losses in sub-cells.

[0014] In an optional embodiment, the substrate is a glass substrate, which includes any one of borate glass, quartz glass, alkali-free glass, and phosphate glass.

[0015] And / or, the thickness of the substrate is 50~500μm. Providing the above-described structure of the control substrate can improve the mechanical properties of perovskite solar cells while reducing their size.

[0016] In an optional embodiment, the conductive material filling the TGV via includes conductive metals and / or conductive polymers; the conductive metal includes any one of elemental copper, copper alloys, elemental silver, silver alloys, elemental tin, and tin alloys, to improve the conductivity of the perovskite solar cell and reduce resistance loss.

[0017] In an optional implementation, the material of the redistribution layer's conductors includes at least one of copper, aluminum, and gold to improve the conductivity of the perovskite solar cell and reduce resistance loss.

[0018] In a second aspect, the present invention provides a method for preparing a perovskite solar cell as described in any of the foregoing embodiments, comprising: A substrate is provided, on which multiple sets of TGV interconnect units are fabricated. Each set of TGV interconnect units includes at least one pair of TGV vias, and each pair of TGV vias includes a first TGV via and a second TGV via.

[0019] A redistribution layer is formed on one side of the substrate, and the redistribution layers are connected in series and / or in parallel.

[0020] Multiple sub-cell cells are formed on the side of the substrate away from the redistribution layer. Each sub-cell cell includes a positive electrode, a negative electrode, and a perovskite functional layer. The positive electrode and the negative electrode are electrically connected to the TGV interconnect unit.

[0021] In an optional embodiment, the method for fabricating a sub-cell includes forming a positive electrode layer on the surface of a substrate.

[0022] The positive electrode layer is scribed with P1 lines to form a plurality of the positive electrodes.

[0023] A perovskite layer is formed on the surface of multiple positive electrodes and within the P1 scribing groove. The perovskite layer is then scribed with P2 lines to form multiple perovskite functional layers. The P2 scribing lines can selectively scribe the positive electrodes.

[0024] A negative electrode layer is formed on the surface of the perovskite functional layer and in the P2 scribing groove. The negative electrode layer can be selectively scribed with P3 to form multiple negative electrodes. Multiple negative electrodes, positive electrodes and perovskite functional layers are arranged one-to-one to form multiple sub-cell units.

[0025] In this design, the P2 scribe line can selectively cut through the positive electrode; that is, the P2 scribe line may or may not cut through the positive electrode. If it does not cut through the positive electrode, electrons from the previous sub-cell can theoretically reach the next sub-cell through the negative electrode or through the TGV via. Since the resistivity of the path through the TGV via is lower, in practical applications, the electron transport path through the negative electrode to the next sub-cell can be considered short-circuited. If the P2 scribe line cuts through the positive electrode, the second TGV via is directly exposed. This scribe line design results in even lower resistance than the design where the P2 scribe line does not cut through the positive electrode.

[0026] Furthermore, the option to selectively use P3 markings on the negative electrode layer can be understood as meaning that the negative electrode layer does not need to be marked, in which case each sub-cell unit shares a single negative electrode; or the negative electrode layer can also be marked with P3 markings to divide each sub-cell unit into an independent structure.

[0027] In an optional embodiment, the method for fabricating multiple sub-cell cells includes: A positive electrode layer is formed on the surface of the substrate.

[0028] An initial hole transport layer and an initial perovskite light-absorbing layer are sequentially formed on the surface of the positive electrode layer. P1 lines are scribed on the positive electrode layer, the initial hole transport layer and the initial perovskite light-absorbing layer to form multiple positive electrodes, hole transport layers and perovskite light-absorbing layers. The hole transport layer and the perovskite light-absorbing layer form the first functional layer and expose the second TGV via to obtain the sub-cell precursor.

[0029] An initial passivation layer, an initial electron transport layer, and a negative electrode layer are sequentially deposited on the surface of the sub-cell precursor. P2 lines are then drawn on the initial passivation layer, the initial electron transport layer, and the negative electrode layer to form multiple negative electrodes, electron transport layers, and passivation layers. The negative electrodes, electron transport layers, and passivation layers form a second functional layer. The negative electrode is electrically connected to a second TGV via, and the first TGV via is electrically connected to the positive electrode.

[0030] In an optional embodiment, the method for fabricating multiple sub-cell cells includes: A positive electrode layer and a perovskite layer are sequentially formed on the surface of a substrate. The perovskite layer includes an initial hole transport layer, an initial perovskite light-absorbing layer, and an initial electron transport layer sequentially formed on the surface of the positive electrode layer.

[0031] P1 lines are scribed on the positive electrode layer and the perovskite layer to form multiple positive electrode and perovskite functional layers, and a second TGV via is exposed to form a sub-cell precursor.

[0032] A negative electrode is deposited on the surface of the sub-cell precursor, and the negative electrode forms an electrical connection with the second TGV via.

[0033] This invention provides three processes for fabricating sub-cell units, demonstrating that the perovskite solar cells provided by this invention are not only applicable to traditional solar cell fabrication processes (using P1, P2, and P3 scribing), but also applicable to schemes with shorter process flows (only using P1 and P2 scribing, and only using P1 scribing), significantly improving the production efficiency of perovskite solar cells.

[0034] Thirdly, the present invention provides the application of a perovskite solar cell as described in any of the foregoing embodiments or a perovskite solar cell prepared by any of the foregoing embodiments in a power generation device.

[0035] The present invention has the following beneficial effects: This invention provides a perovskite solar cell, its fabrication method, and its applications. By placing sub-cell units and a redistribution layer on opposite surfaces of a substrate, and then electrically connecting them via TGV interconnect units, the electrical interconnection path of the perovskite solar cell is transformed from a traditional two-dimensional planar layout to a three-dimensional vertical layout. This reduces shading of the effective light-receiving area and increases the energy density of the module. Furthermore, due to the above structural design, the material selection for the interconnection lines between sub-cell units is not limited by light transmittance; highly conductive metal materials can be used, thereby reducing the cell's resistance loss. In addition, this structure allows for series, parallel, or mixed connections between sub-cell units through the redistribution layer, providing high design flexibility. The glass substrate provides good rigidity and thermal conductivity, and the TGV interconnect units facilitate heat conduction to the redistribution layer on the other side of the substrate, reducing heat loss from the sub-cell units and improving the product's heat dissipation capacity. Since the interconnection points of the perovskite solar cell provided by this invention are inside the substrate, and the TGV interconnect units are completely encapsulated by the glass substrate, a natural hermetically sealed packaging channel is formed, inhibiting the intrusion of moisture and oxygen and delaying the degradation of the perovskite material. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a longitudinal cross-sectional view of the perovskite solar cell provided in the first embodiment of the present invention; Figure 2 This is a cross-sectional perspective view of a perovskite solar cell provided in the first embodiment of the present invention; Figure 3 for Figure 2 Enlarged view of the C-structure; Figure 4 This is a longitudinal cross-sectional view of a perovskite solar cell provided in the second embodiment of the present invention; Figure 5 This is a cross-sectional perspective view of a perovskite solar cell provided in the second embodiment of the present invention; Figure 6 for Figure 5 Enlarged view of the D-structure; Figure 7 A schematic diagram of the parallel structure of a perovskite solar cell provided in the third embodiment of the present invention; Figures 1-3Explanation of key component symbols: 100-Perovskite solar cell; 110-Substrate; 120-Redistribution layer; 130-Subcell cell; 131-Positive electrode; 132-Negative electrode; 133-Perovskite functional layer; 140-TGV interconnect unit; 141-First TGV via; 142-Second TGV via; Figure 4 and Figure 5 Explanation of key component symbols: 200 - Perovskite solar cell; 210 - Substrate; 220 - Redistribution layer; 230 - Sub-cell unit; 231 - Positive electrode; 232 - First functional layer; 233 - Second functional layer; 240 - TGV interconnect unit; 241 - First TGV via; 242 - Second TGV via; Figure 6 Explanation of key component symbols: 300 - Perovskite solar cell; 340 - TGV interconnect unit; 341 - First TGV via; 342 - Second TGV via. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0039] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0040] It should be noted that TGV stands for Through Glass Via. TGV technology is a packaging technology that creates vertical electrical interconnect vias on a glass substrate. Originating in the semiconductor and MEMS fields, it is currently mainly used in radio frequency devices, wafer-level packaging, and microsystem integration.

[0041] Please see Figure 1 and Figure 2 The present invention provides a perovskite solar cell 100, comprising a substrate 110, a redistribution layer 120 and sub-cell units 130; the redistribution layer 120 and the sub-cell units 130 are respectively located on two opposite surfaces of the substrate 110.

[0042] For example, in such Figure 1 In the structure shown, the redistribution layer 120 is located on the lower layer of the substrate 110, and the sub-cell unit 130 is located on the upper layer of the substrate 110. For ease of understanding and description, the following will refer to it as follows: Figure 1 The structure shown is for illustrative purposes only, but the terms "upper layer" and "lower layer" should not be construed as limiting the structure of the perovskite solar cell 100 provided by this invention.

[0043] The sub-cell unit 130 includes a positive electrode 131, a negative electrode 132, and a perovskite functional layer 133, with the perovskite functional layer 133 located between the positive electrode 131 and the negative electrode 132. Therefore, under illumination, each sub-cell unit 130 generates electron-hole pairs, which are separated under the influence of a built-in electric field and output via the negative electrode 132 and the positive electrode 131 respectively, forming a complete photovoltaic response mechanism.

[0044] It is understood that the perovskite functional layer 133 is a common structure in the art. For example, a hole transport layer, a perovskite light-absorbing layer, a passivation layer, and an electron transport layer can be sequentially formed on one side of the surface of the positive electrode 131. The materials of each layer structure in the perovskite functional layer 133 can also be prepared using existing materials. Therefore, the perovskite solar cell 100 provided by the present invention has a wide range of applications and excellent application value.

[0045] In such Figure 1 In the structure shown, the positive electrode 131 is the bottom electrode, which is in direct contact with the substrate 110, the negative electrode 132 is the top electrode, and the perovskite functional layer 133 is located between the two.

[0046] In such Figure 1 In the illustrated embodiment, each sub-cell 130 has an independent top electrode; in other embodiments, the top electrode may also be a common counter electrode covering multiple sub-cells 130.

[0047] Furthermore, multiple sets of TGV interconnect units 140 are disposed on the substrate 110, forming a TGV via array. Each sub-cell unit 130 is correspondingly disposed to one set of TGV interconnect units 140. Therefore, the number of sets of TGV interconnect units 140 is the same as the number of sub-cell units 130, and the number of sets of TGV interconnect units 140 can be increased or decreased according to the performance requirements of the perovskite solar cell 100. For example, in Figure 2 In the structure shown, there are five groups of TGV interconnection units 140 and five sub-battery units 130.

[0048] Each group of TGV interconnect units 140 includes at least one pair of TGV vias, for example in Figure 2 In the structure shown, each group of TGV interconnect units 140 has 15 pairs of TGV vias.

[0049] Each pair of TGV vias includes a first TGV via 141 and a second TGV via 142, and each TGV via is filled with conductive material; the positive electrode 131 is electrically connected to the first TGV via 141, and the negative electrode 132 is electrically connected to the second TGV via 142.

[0050] Therefore, it can be understood that the positive electrode 131 of each sub-cell 130 is connected to the redistribution layer 120 through its corresponding first TGV via 141; and the negative electrode 132 of each sub-cell 130 is connected to the redistribution layer 120 through its corresponding second TGV via 142.

[0051] The conductors of the redistribution layer 120 connect multiple TGV interconnect units 140 in series and / or in parallel.

[0052] The redistribution layer 120 connects the TGV interconnect units 140 corresponding to multiple sub-cell units 130 as needed via patterned wires, enabling flexible configuration of the circuit structure. In series mode, the output voltage of the perovskite solar cell 100 can be increased to meet the requirements of high-voltage applications; in parallel mode, the output current of the perovskite solar cell 100 can be increased, enhancing power generation performance under low light conditions and improving power output performance under partial shading; in hybrid series-parallel mode, electrical parameters can be customized according to actual application requirements to optimize system matching efficiency. This flexibility is difficult to achieve with traditional monolithic integrated structures.

[0053] For example, when each sub-cell 130 is connected in series: please refer to Figure 1 Under illumination, the first sub-cell 130 generates a photocurrent. Charge carriers separate under the influence of the built-in electric field, and holes are collected via the positive electrode 131 of the sub-cell 130 and conducted through the first TGV via 141 electrically connected to it to the redistribution layer 120 on the back of the substrate 110. Subsequently, the current flows along the wires in the redistribution layer 120, enters the second TGV via 142 corresponding to the adjacent second sub-cell 130, and is then conducted through the second TGV via 142 to the negative electrode 132 of the second sub-cell 130, entering its internal perovskite functional layer 133. After the second sub-cell 130 completes the transfer of photogenerated charge carriers, its positive electrode 131 again leads the output current through its corresponding first TGV via 141 to the redistribution layer 120, continuing to transmit it to the negative electrode 132 side of the next sub-cell 130. This process is passed step-by-step, forming a cascaded voltage superposition structure, ultimately resulting in the sum of the voltages of all sub-cells 130.

[0054] When all sub-cells are connected in parallel (130): please refer to [link / reference]. Figure 6Under illumination, each sub-cell 130 generates photogenerated carriers in its internal perovskite functional layer 133. Under the influence of the built-in electric field, charge separation is achieved, forming an electromotive force. When an external load is connected, current flows from the positive electrode 131 of each sub-cell 130, is conducted through the first TGV via 141 electrically connected to it, to the redistribution layer 120 on the back of the substrate 110, and then flows into the common positive bus via the wires in the redistribution layer 120. This current flows along the bus, passes through the external load, enters the common negative bus, and is then conducted through the second TGV via 142 corresponding to each sub-cell 130 to the negative electrode 132 of the corresponding sub-cell 130, flowing into its internal perovskite functional layer 133, and finally returning to the positive electrode 131 of that sub-cell 130, completing the entire closed loop. The output currents of all sub-cell cells 130 are paralleled in the redistribution layer 120, and the total output current is the sum of the currents of each sub-cell cell 130. The output voltage is equal to the operating voltage of a single sub-cell cell 130.

[0055] When multiple sub-cell units 130 are connected in a mixed manner, the wire connection path of the redistribution layer 120 can be adjusted according to actual needs to realize the circuit structure of the perovskite solar cell 100 with a series and parallel connection.

[0056] The perovskite solar cell 100 provided by the present invention, by introducing a substrate 110 and introducing TGV interconnect units 140 on the substrate 110, and coordinating the redistribution layer 120 and sub-cell units 130 on both sides of the substrate 110, has at least the following advantages: 1) This structure achieves spatial separation between the functional layers and the interconnect structure in the perovskite solar cell module 100. The sub-cell unit 130 is located on one side of the substrate 110, while the redistribution layer 120 is located on the other side, transforming the electrical interconnect path from a traditional two-dimensional planar layout to a three-dimensional integrated approach. This double-sided distribution design avoids the shading loss caused by arranging metal traces on the illuminated surface, increases the effective light-receiving area of ​​the module, significantly reduces the dead zone area, and thus improves the energy density.

[0057] Meanwhile, since the redistribution layer 120 is located on the back side of the substrate 110 and is not affected by light, its material selection is not limited by light transmittance, and highly conductive metal materials can be used. For example, in some embodiments, the material of the conductors of the redistribution layer 120 can be at least one of copper, aluminum and gold.

[0058] By employing highly conductive metallic materials for wiring, the resistance loss of the perovskite solar cell 100 is significantly reduced compared to traditional solutions that rely on transparent conductive materials such as ITO to conduct the circuit. Furthermore, since the redistribution layer 120 is unaffected by sunlight, its conductor width and thickness can be further optimized to minimize the resistance of the perovskite solar cell 100 and further improve its energy conversion efficiency.

[0059] 2) The TGV interconnect unit 140 serves as a conductive channel penetrating the upper and lower surfaces of the substrate 110, providing an independent electrode lead-out interface for each sub-cell unit 130.

[0060] Each TGV interconnect unit 140 includes at least one pair of TGV vias (i.e., the first TGV via 141 and the second TGV via 142). Multiple pairs of TGV vias are arrayed in the area corresponding to the sub-cell unit 130, so that the current generated by the sub-cell unit 130 can be extracted from multiple nearby locations. Photogenerated carriers can be quickly extracted without going through a large area of ​​lateral expansion, which greatly shortens the current transmission path, reduces the on-resistance, reduces the energy loss caused by lateral expansion resistance, improves the current carrying capacity, and avoids local overheating, thus achieving a uniform distribution of current load.

[0061] Therefore, in optional embodiments, each group of TGV interconnect units 140 may have 8, 10, 12, 15, 20 or more pairs of TGV vias, and the present invention is not limited thereto. The number of TGV via pairs can be conventionally set according to the size of each sub-cell unit 130 and the performance requirements of the perovskite solar cell 100, and is not limited to the aforementioned embodiments.

[0062] Furthermore, to ensure the mechanical integrity of the substrate 110 and the conductivity of the battery, the diameter of each TGV via is 10~100μm, for example in... Figure 1 In the structure shown, the diameter of each TGV via is 30 μm. If the diameter of the TGV via is too small, it is difficult to achieve uniform and complete filling of conductive material, which can easily lead to voids or open circuits and increase contact resistance. If the diameter of the TGV via is too large, it will weaken the structural strength of the substrate 110 and reduce its ability to support the sub-cell cell 130.

[0063] Furthermore, the center-to-center distance between two adjacent pairs of first TGV vias 141 is 50~200μm, and the center-to-center distance between two adjacent pairs of second TGV vias 142 is 50~200μm. For example, in Figure 1 In the structure shown, the center-to-center distance between two adjacent pairs of first TGV vias 141 is 100 μm, and the center-to-center distance between two adjacent pairs of second TGV vias 142 is 100 μm.

[0064] It should be noted that, in order to simplify the fabrication process of the perovskite solar cell 100, the first TGV through-hole 141 and the second TGV through-hole 142 corresponding to each sub-cell unit 130 are arranged side by side in space. Therefore, in some preferred embodiments, the center distance between two adjacent pairs of first TGV through-holes 141 and the center distance between two adjacent pairs of second TGV through-holes 142 should be equal or similar within the error range.

[0065] By controlling the spacing between two adjacent pairs of first TGV through holes 141 and two adjacent pairs of second TGV through holes 142 within the above range, the path length of current transmission inside the sub-cell 130 is optimized, the on-resistance is significantly reduced, the current carrying capacity is improved, and local overheating is avoided, thus achieving a uniform distribution of current load.

[0066] Furthermore, the shape of the TGV through-hole includes at least one of the following: conical, cylindrical, or with an arc-shaped inner wall; for example, in Figure 1 In the structure shown, each TGV via is cylindrical. The specific shape is not limited by this invention, as long as it achieves the effect of conductivity between the upper and lower layers of the substrate 110.

[0067] Preferably, the TGV via is a vertical conductive channel penetrating the substrate 110 to shorten the current transmission path and simplify the fabrication process of the TGV via.

[0068] 3) The TGV vias provided by this invention are filled with conductive material, thereby forming a stable and reliable vertical conductive path. This significantly reduces the high series resistance problem caused by the lateral transmission of transparent conductive oxides such as ITO in traditional integration methods, and improves the fill factor and photoelectric conversion efficiency of the components.

[0069] Therefore, in an optional embodiment, the conductive material filled in the TGV via is a conductive metal; the conductive metal includes any one of elemental copper, copper alloy, elemental silver, silver alloy, elemental tin, and tin alloy; for example, each TGV via is filled with metallic Cu as a conductive material.

[0070] Furthermore, the TGV vias are embedded in the dielectric of the substrate 110, and the conductive material is filled in the TGV vias. On the one hand, this gives the perovskite solar cell 100 good mechanical stability and corrosion resistance, avoiding the problems of easy aging and migration of traditional welding points, and enhancing long-term operational reliability. On the other hand, the interconnection points of the cell are completely covered by the substrate 110, forming a natural hermetically sealed packaging channel, which can inhibit the intrusion of moisture, oxygen and other substances, and effectively delay the degradation of perovskite materials.

[0071] Traditional perovskite solar cell modules rely on surface laser scribing to achieve interconnection. The resulting P1 / P2 / P3 trenches not only occupy the effective area but also expose multiple layers of functional materials (especially the perovskite layer, which is extremely sensitive to water and oxygen), becoming the main channel for environmental corrosion and leading to poor encapsulation reliability.

[0072] In this invention, electrical interconnection is achieved through TGV vias embedded inside the substrate 110. All critical connection points are enclosed within the substrate 110, avoiding complex and leak-prone surface wiring in the active layer region. This allows high-barrier encapsulation films or rigid glass covers to be applied to both the top and bottom surfaces of the entire device, combined with edge sealing technology, forming a fully enclosed hermetic protection.

[0073] In an optional embodiment, the substrate 110 is a glass substrate, which includes any one of borate glass, quartz glass, alkali-free glass, and phosphate glass.

[0074] And / or, the thickness of the substrate 110 is 50~500μm, for example in Figure 1 In the embodiment shown, the thickness of the substrate 110 is 200 μm.

[0075] By selecting the substrate 110, which is itself a dense inorganic material with excellent moisture barrier capabilities, no additional barrier layer is required. The top (on the side of the sub-cell 130) can be covered with a high-transmittance barrier film or a second glass layer through lamination. This double-sided encapsulation structure not only has strong process compatibility but also effectively inhibits moisture and oxygen penetration as well as ion migration of metal electrodes, significantly extending the lifespan of the device in humid and hot environments and fundamentally improving the long-term operational stability of the perovskite solar cell 100 module.

[0076] In some embodiments, such as Figure 1 As shown, a positive electrode 131 is formed on one side surface of the substrate 110 and covers at least one pair of TGV vias. The positive electrodes 131 are separated by a P1 scribe groove. A perovskite functional layer 133 is formed on the positive electrode 131. The perovskite functional layer 133 includes a hole transport layer, a perovskite light-absorbing layer and an electron transport layer stacked sequentially. A negative electrode 132 is formed on the surface of the electron transport layer and extends through the perovskite functional layer 133 to the surface of the positive electrode 131 of the adjacent sub-cell cell 130, thereby connecting with the adjacent sub-cell cell 130 in series through the TGV vias of the substrate 110.

[0077] like Figure 2As shown, the positive electrode 131 is formed on one side surface of the substrate 110 and covers the first TGV via 141. The perovskite functional layer 133 includes a hole transport layer, a perovskite light-absorbing layer, a passivation layer, and an electron transport layer stacked sequentially. The hole transport layer and the perovskite light-absorbing layer are formed on the side of the positive electrode 131 away from the substrate 110. The passivation layer covers the upper surface of the perovskite light-absorbing layer, as well as the sidewalls of the hole transport layer, the perovskite light-absorbing layer, and the positive electrode 131. The electron transport layer and the negative electrode 132 are formed sequentially on the surface of the passivation layer. The passivation layer and the electron transport layer have a certain isolation effect, so that the negative electrode 132 can be electrically connected to the second TGV via 142 in a pair of TGV vias, and connected to the positive electrode 131 of the adjacent sub-cell cell 130 through the corresponding first TGV via 141, realizing series connection with the positive electrode 131 of the adjacent sub-cell cell 130.

[0078] Secondly, the present invention provides a method for fabricating a perovskite solar cell 100 as described in any of the foregoing embodiments, the specific steps of which are as follows: S1. A substrate 110 is provided, and a plurality of TGV interconnect units 140 are formed on the substrate 110. Each TGV interconnect unit 140 includes at least one pair of TGV vias, and each pair of TGV vias includes a first TGV via 141 and a second TGV via 142.

[0079] The substrate 110 may include any one of borate glass, quartz glass, alkali-free glass, and phosphate glass.

[0080] The steps of forming multiple sets of TGV interconnect units 140 include: forming multiple sets of through holes that penetrate the substrate 110 in an array within the substrate 110; depositing conductive material on the sidewalls of the multiple through holes and the surface of the substrate 110; filling the through holes with conductive material; and then polishing both sides of the substrate 110, such as CMP polishing, to form multiple sets of TGV interconnect units 140. Each set of TGV interconnect units 140 includes multiple pairs of TGV through holes, and each pair of TGV through holes is a first TGV through hole 141 and a second TGV through hole 142.

[0081] The method of forming multiple sets of arrayed TGV vias that penetrate the substrate 110 can include: using a combination of laser drilling and etching; for example, a combination of femtosecond laser drilling and wet etching can be used.

[0082] For example, in some specific embodiments, infrared picosecond laser-induced drilling is used to etch the substrate 110, where the laser wavelength is 1064 nm, the pulse width is 13 ps, the repetition frequency is 80 kHz, and the power is 30 W. Material ionization is induced by multiphoton nonlinear absorption. The modified glass is then immersed in a 10% hydrofluoric acid solution, and wet etching is performed at 25°C to create multiple TGV vias. After etching, ultrasonic-assisted cleaning is used to remove residues from the vias, ultimately forming multiple sets of TGV interconnect units 140.

[0083] Alternatively, the fabrication method of TGV vias can employ other commonly used methods in the semiconductor field.

[0084] When depositing conductive materials, sputtering, electroplating, or other deposition methods can be used for deposition and filling, such as at least one of magnetron sputtering deposition, electrochemical deposition, or conductive paste filling.

[0085] When the filling method for conductive materials is magnetron sputtering deposition, the preparation method and related parameters include: at 10 - 7 Under a vacuum of Torr or higher, 99.999% pure argon gas is introduced at a flow rate of 10~50 sccm, and Cu magnetron sputtering is performed at a temperature of 145~155℃, a power of 50~150W, a voltage of 300~600V, and a current of 0.1~2A.

[0086] When the filling method of the conductive material is electrochemical deposition, its preparation method and related parameters include: the electroplating solution is selected from the copper sulfate-sulfuric acid system, the pulse frequency is 10~1000Hz, the duty cycle is 30~70%; the forward average current density is 0.5~3ASD, the reverse current density is 0.5~3ASD, the reverse current density is 10~30% of the forward current density, and the deposition temperature is maintained at 20~25℃.

[0087] When the conductive material is filled using conductive paste, the preparation method and related parameters include: employing an injection filling process, using a precision injection head to inject copper paste into the TGV through-hole; the viscosity of the copper paste is 10000~30000 cP, the injection pressure is 0.1~0.5 MPa, and the injection speed is 0.1~0.5 mm. 3 / s, after filling, pre-bake at 80~100℃ for 20~30min to remove air bubbles, and then cure in a nitrogen environment.

[0088] It should be noted that the order in which the redistribution layer 120 and the sub-cell unit 130 are fabricated on the substrate 110 can be adjusted according to actual needs. The following description assumes that the redistribution layer 120 is fabricated first, followed by the sub-cell unit 130. In other embodiments, the sub-cell unit 130 may be fabricated first, followed by the redistribution layer 120.

[0089] S2. Fabricating the redistribution layer 120 includes: forming an initial redistribution layer on one side of the substrate 110; patterning the initial redistribution layer to form the redistribution layer 120, for example, by sputtering and other deposition methods; and then forming the redistribution layer 120 by etching or other patterning processes, wherein the redistribution layer 120 is formed by... Figures 1-7 As shown, in the patterning process, multiple first TGV vias 141 and second TGV vias 142 can be selectively connected by wiring in different ways to realize multiple series and / or parallel connections of each sub-cell unit 130.

[0090] The redistribution layer 120 can be fabricated using existing processes, which simply involve attaching the wires to the surface of the substrate 110.

[0091] In some examples, when the redistribution layer 120 is deposited using magnetron sputtering, the specific method is as follows: the substrate 110 is ultrasonically cleaned, then dried with nitrogen gas, the clean substrate 110 is placed in the sample stage of the magnetron sputtering chamber, and the chamber is closed and evacuated. The local vacuum level of the magnetron sputtering chamber is -5 × 10⁻⁵. -4 ~1×10 -3 At Pa, high-purity argon gas is introduced, and the sample stage temperature is adjusted to 80~120℃. A mask with a metal redistribution pattern is placed on the substrate 110, and magnetron sputtering is started after the temperature is kept constant.

[0092] For magnetron sputtering, a copper target with a purity of ≥99.99% is selected, the target-substrate distance is 60~80mm, the power is set to 150~250W, the deposition rate is 0.1~0.15μm / min, and the continuous sputtering is carried out for 15~20min. After sputtering, the redistribution layer 120 is obtained by annealing at 150℃ for 30min in a nitrogen atmosphere.

[0093] The cleaning solution for ultrasonic cleaning of substrate 110 can be at least one of acetone, anhydrous ethanol and plasma water.

[0094] S3. Multiple sub-cell cells 130 are formed on the other side of the substrate 110 away from the redistribution layer 120. Each sub-cell cell 130 includes a positive electrode 131, a negative electrode 132 and a perovskite functional layer 133. The positive electrode 131 and the negative electrode 132 are electrically connected to the TGV interconnect unit 140.

[0095] The method for fabricating the sub-cell cells 130 includes forming a plurality of sub-cell cells 130 on the surface of the substrate 110 away from the redistribution layer 120 by deposition and patterning processes. The deposition methods include solution deposition and / or vacuum evaporation; the solution deposition methods include at least one of spin coating, blade coating, spray coating, and inkjet printing; the patterning processes include at least one of photolithography, laser etching, and plasma etching.

[0096] In an optional embodiment, the surface where the sub-battery unit 130 is located is connected to the surface where the redistribution layer 120 is located via a TGV via.

[0097] In an optional implementation, the patterning process includes dividing at least one of the positive electrode 131, the negative electrode 132, and the perovskite functional layer 133 to form electrical isolation between two adjacent sub-cell cells 130.

[0098] The perovskite solar cell 100 provided by the present invention can not only be prepared using the existing P1~P3 scribing process, but also omit some scribing, so as to improve the power generation efficiency of the perovskite solar cell 100.

[0099] The following is Figures 1-3 The structure shown is the first embodiment. The specific fabrication method and scribing process of the sub-cell unit 130 of the perovskite solar cell 100 provided in this embodiment are described in detail.

[0100] S31. A positive electrode layer is formed on the surface of the substrate 110. The positive electrode layer can be formed by deposition, coating or other methods. Then, P1 lines are scribing the positive electrode layer to form multiple positive electrodes 131. The P1 scribing method can be laser scribing or etching or other methods.

[0101] In some specific embodiments, the positive electrode layer can be an ITO thin film layer, which can be formed by sputtering and depositing an ITO thin film on the upper surface of the obtained substrate 110, and then using a picosecond green laser to scribing P1 lines to scribble the ITO thin film without damaging the substrate 110, so as to divide the ITO thin film into multiple positive electrodes 131.

[0102] S32. Nickel oxide is sputtered as a hole transport layer on the surfaces of multiple positive electrodes 131 and within the scribe lines of P1. Then, a perovskite light-absorbing layer is prepared using a slit coating method. The material of the perovskite light-absorbing layer is Cs. 0.1 FA 0.9 PbI3 was then deposited by evaporation as a passivation layer, followed by the evaporation of C60 / BCP as an electron transport layer. The hole transport layer, perovskite light-absorbing layer, passivation layer, and electron transport layer together constitute the perovskite layer.

[0103] Picosecond green lasers are used to perform P2 scribing on the perovskite layer, etching the electron transport layer, passivation layer, perovskite light-absorbing layer, and hole transport layer. P2 scribing can remove the perovskite layer above the second TGV via 142, dividing the large-area perovskite layer into multiple sub-cell precursors.

[0104] It should be noted that the ITO film in the P2 scribing area can be retained or removed. When the ITO layer is not removed from the P2 scribing area, theoretically, electrons from the previous sub-cell 130 can be transferred to the next sub-cell 130 through two paths. The first path is as follows: Figure 1 As shown in path A (i.e., the electron transport path of a traditional perovskite solar cell), electrons from the previous sub-cell 130 pass through the top electrode and the area marked P2 to reach the ITO layer of the next sub-cell 130. After passing through the ITO layer, they directly enter the perovskite functional layer 133 of the next sub-cell 130, achieving series connection. The second path is as follows: Figure 1 As shown in path B, electrons from the previous sub-cell 130 pass through the top electrode and the P2 scribed region to reach the ITO layer of the next sub-cell 130. After passing through the ITO layer, they are transported to the second TGV via 142 of the previous sub-cell 130, then through the redistribution layer 120 into the first TGV via 141 of the next sub-cell 130, and then through the ITO layer into the perovskite functional layer 133, thus achieving series connection.

[0105] Because the TGV via contains conductive materials, such as copper, silver, and tin, which have lower resistivity than ITO, electrons will preferentially take the B path, which has lower resistivity, thus making the A path short-circuited during actual transmission.

[0106] It should be noted that, Figure 1 Paths A and B exist simultaneously in each sub-cell. Figure 1 The difference in their paths is simply shown at the connection point of the two sets of sub-cells.

[0107] If the ITO layer is broken during the P2 scribe process, electrons can only be transmitted through the TGV via and the redistribution layer 120. This solution has lower resistance compared to the solution where the P2 scribe does not break the ITO layer.

[0108] S33. A semi-transparent metal (such as an Ag / Au / Cu composite thin layer) is vapor-deposited on the surface of the perovskite functional layer 133 and in the P2 scribing groove to form a negative electrode layer. The negative electrode layer can be selectively scribed with P3 to form a top negative electrode 132. The negative electrode 132 is electrically connected to the second TGV through hole 142.

[0109] When P3 is not marked, the top negative electrode 132 is the shared negative electrode of multiple sub-cell precursors, but when... Figure 1 In the structure shown, the P3 scribing in this embodiment is performed using an ultraviolet picosecond laser to divide the top semi-transparent metal layer into multiple independent negative electrodes 132 corresponding to the sub-cell cells 130. The multiple negative electrodes 132, positive electrodes 131 and perovskite functional layers 133 are arranged one-to-one to form multiple sub-cell cells 130.

[0110] In this embodiment, the lines P1, P2 and P3 set between two adjacent sub-cells are parallel to each other and staggered in sequence. The lateral offset distance between the central axes of the lines P1 and P2 is 50μm, and the lateral offset distance between the central axes of the lines P2 and P3 is 50μm.

[0111] Furthermore, the present invention also provides another structure for a perovskite solar cell 200, which differs from the first embodiment only in the method of fabricating the sub-cell unit 230. (The following is a simplified version of the original text.) Figures 4-6 The structure shown is a second embodiment, and the specific fabrication method and scribing process of the sub-cell unit 230 of the perovskite solar cell 200 provided in this embodiment are described in detail.

[0112] Specifically, the perovskite solar cell 200 provided in this embodiment has the same other structures as the first embodiment. For example, multiple sets of TGV vias are prepared on the surface of the substrate 210 to form TGV interconnect units 240 on the substrate 210. Then, a redistribution layer 220 is prepared on one side of the substrate 210, and a sub-cell unit 230 is prepared on the other side of the substrate 210.

[0113] The specific fabrication method of the sub-battery unit 230 provided in this embodiment is as follows: S31. An ITO thin film, an initial hole transport layer, and an initial perovskite light-absorbing layer are sequentially deposited on the surface of the substrate 210 away from the redistribution layer 220. Then, picosecond green light is used to scribing the ITO thin film, the initial hole transport layer, and the initial perovskite light-absorbing layer with P1 lines. The P1 scribing can expose the second TGV via 242 from the ITO thin film, the initial hole transport layer, and the initial perovskite light-absorbing layer. The line width of the P1 scribing is 50~100μm, ensuring that the second TGV via 242 is located at the center of the P1 line groove.

[0114] The P1 line can divide the ITO thin film into multiple positive electrodes 231, and divide the initial hole transport layer and the initial perovskite light-absorbing layer into multiple hole transport layers and perovskite light-absorbing layers. The hole transport layer and the perovskite light-absorbing layer form the first functional layer 232. The positive electrodes 231 and the first functional layer 232 are arranged in a one-to-one correspondence to obtain the sub-cell precursor.

[0115] S32. An initial passivation layer, an initial electron transport layer, and a negative electrode layer are sequentially sputtered and deposited on the surface of the perovskite light-absorbing layer. Then, picosecond ultraviolet lasers are used to scribing the initial passivation layer, the initial electron transport layer, and the negative electrode layer with P2 lines to form multiple one-to-one corresponding passivation layers, electron transport layers, and negative electrodes. The passivation layer, electron transport layer, and negative electrode form the second functional layer 233.

[0116] The line width of the P2 groove is 30 μm, and the distance between the center of the P2 groove and the center of the second TGV through-hole 242 is 15~30 μm (i.e., they can partially overlap). In this embodiment, the negative electrode is electrically connected to the second TGV through-hole 242, and the first TGV through-hole 241 is electrically connected to the positive electrode 231. Therefore, as... Figure 4 As shown, current flows from the bottom of the previous sub-cell 230 (through the second TGV via 242, the redistribution layer 220, and the first TGV via 241) to the bottom of the next sub-cell 230, achieving series connection. The structure provided in this embodiment simplifies the laser etching interconnect process and reduces the dead area.

[0117] Furthermore, the present invention also provides another structure for a perovskite solar cell 300, which differs from the first embodiment only in the method of fabricating the sub-cells. The following will refer to... Figure 7 The structure shown is the third embodiment, and the specific fabrication method and scribing process of the sub-cell unit of the perovskite solar cell 300 provided in this embodiment are described in detail.

[0118] Specifically, the other structures of the perovskite solar cell 300 provided in this embodiment are the same as those in the first embodiment. For example, multiple sets of TGV vias are prepared on the substrate surface. Each set of TGV vias includes a first TGV via 341 and a second TGV via 342. The multiple sets of TGV vias form TGV interconnect units 340 on the substrate. Then, a redistribution layer is prepared on one side of the substrate, and sub-cell units are prepared on the other side of the substrate.

[0119] The specific fabrication method of the sub-battery unit provided in this embodiment is as follows: S31. An ITO thin film and a perovskite layer are sequentially deposited on the substrate surface away from the redistribution layer. The perovskite layer includes an initial hole transport layer, an initial perovskite light-absorbing layer, an initial passivation layer, and an initial electron transport layer sequentially deposited on the ITO thin film surface. Picosecond green light is used to perform P1 scribing on the ITO thin film and the perovskite layer. P1 scribing can divide the ITO thin film into multiple positive electrodes and the perovskite layer into multiple perovskite functional layers, and ensure that the second TGV via 342 is exposed in the P1 groove, forming a sub-cell precursor. A negative electrode is then deposited on the surface of the sub-cell precursor to make the negative electrode conductive with the second TGV via 342.

[0120] The difference between this embodiment and the previous two embodiments is that the sub-battery units in this embodiment are connected in parallel, therefore, as Figure 7 As shown, in this embodiment, the Cu metal wires of the redistribution layer connect the various sub-cell units in parallel.

[0121] After the sub-cell unit 130 is fabricated on the surface of the substrate 110 using any of the three methods described above, the perovskite solar cell 100 can be obtained by laminating the upper and lower surfaces of the perovskite solar cell with a high-barrier encapsulation film and a high-transparency glass.

[0122] Thirdly, the present invention provides the application of a perovskite solar cell 100 as described in any of the foregoing embodiments or a perovskite solar cell 100 prepared by any of the foregoing embodiments in a power generation device.

[0123] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A perovskite solar cell (100), characterized in that, It includes a substrate (110), a redistribution layer (120), and sub-cell units (130); the redistribution layer (120) and the sub-cell units (130) are respectively located on two opposite surfaces of the substrate (110); The substrate (110) is provided with multiple sets of TGV interconnect units (140), each sub-battery unit (130) is provided with a corresponding set of TGV interconnect units (140), each set of TGV interconnect units (140) includes at least one pair of TGV vias, each pair of TGV vias includes a first TGV via (141) and a second TGV via (142), and each TGV via is filled with conductive material; The sub-cell unit (130) includes a positive electrode (131), a negative electrode (132), and a perovskite functional layer (133). The positive electrode (131) is electrically connected to the first TGV via (141), and the negative electrode (132) is electrically connected to the second TGV via (142). The perovskite functional layer (133) is located between the positive electrode (131) and the negative electrode (132). The conductors of the redistribution layer (120) connect multiple sets of the TGV interconnect units (140) in series and / or in parallel.

2. The perovskite solar cell (100) according to claim 1, characterized in that, The diameter of each TGV through hole is 10~100μm, the center distance between two adjacent pairs of first TGV through holes (141) is 50~200μm, and the center distance between two adjacent pairs of second TGV through holes (142) is 50~200μm; And / or, the shape of the TGV through-hole includes at least one of the following: tapered, cylindrical, or having an arc-shaped inner wall.

3. The perovskite solar cell (100) according to claim 1, characterized in that, The substrate (110) is a glass substrate, which includes any one of borate glass, quartz glass, alkali-free glass and phosphate glass; And / or, the thickness of the substrate (110) is 50~500μm.

4. The perovskite solar cell (100) according to claim 1, characterized in that, The conductive material filling the TGV via includes conductive metals and / or conductive polymers; the conductive metal includes any one of elemental copper, copper alloys, elemental silver, silver alloys, elemental tin, and tin alloys.

5. The perovskite solar cell (100) according to claim 1, characterized in that, The material of the conductors in the redistribution layer (120) includes at least one of copper, aluminum, and gold.

6. A method for preparing a perovskite solar cell (100) as described in any one of claims 1 to 5, characterized in that, include: A substrate (110) is provided, and a plurality of TGV interconnect units (140) are formed on the substrate (110). Each group of TGV interconnect units (140) includes at least one pair of TGV vias, and each pair of TGV vias includes a first TGV via (141) and a second TGV via (142). The redistribution layer (120) is formed on one side of the substrate (110), and the redistribution layers (120) are connected in series and / or in parallel; A plurality of sub-cell cells (130) are formed on the side of the substrate (110) away from the redistribution layer (120). Each sub-cell cell includes a positive electrode (131), a negative electrode (132) and a perovskite functional layer (133). The positive electrode (131) and the negative electrode (132) are electrically connected to the TGV interconnect unit (140).

7. The preparation method according to claim 6, characterized in that, The method of forming a plurality of said sub-cell cells (130) includes: A positive electrode layer is formed on the surface of the substrate (110); The positive electrode layer is scribed with P1 to form a plurality of positive electrodes (131). A perovskite layer is formed on the surface of the plurality of positive electrodes (131) and in the P1 scribing groove, and P2 scribing is performed on the perovskite layer to form a plurality of perovskite functional layers (133), wherein the P2 scribing can selectively scribe the positive electrodes (131). A negative electrode layer is formed on the surface of the perovskite functional layer (133) and in the P2 scribing groove. The negative electrode layer can be selectively scribed with P3 to form a plurality of negative electrodes (132). The plurality of negative electrodes (132), the positive electrode (131) and the perovskite functional layer (133) are arranged one-to-one to form a plurality of sub-cell cells (130).

8. The preparation method according to claim 6, characterized in that, The method for forming multiple sub-cell cells (230) includes: A positive electrode layer is formed on the surface of the substrate (110); An initial hole transport layer and an initial perovskite light-absorbing layer are sequentially formed on the surface of the positive electrode layer. The positive electrode layer, the initial hole transport layer and the initial perovskite light-absorbing layer are scribed with P1 lines to form multiple positive electrodes (231), hole transport layers and perovskite light-absorbing layers. The hole transport layer and the perovskite light-absorbing layer form a first functional layer (232) and expose the second TGV via (242) to obtain a sub-cell precursor. An initial passivation layer, an initial electron transport layer, and a negative electrode layer are sequentially deposited on the surface of the sub-cell precursor. The initial passivation layer, the initial electron transport layer, and the negative electrode layer are scribe using P2 to form a plurality of negative electrodes, electron transport layers, and passivation layers. The negative electrodes, electron transport layers, and passivation layers form a second functional layer (233). The negative electrode is electrically connected to the second TGV via (242), and the first TGV via (241) is electrically connected to the positive electrode (231).

9. The preparation method according to claim 6, characterized in that, The method for fabricating multiple sub-cells includes: A positive electrode layer and a perovskite layer are sequentially formed on the surface of the substrate. The perovskite layer includes an initial hole transport layer, an initial perovskite light-absorbing layer, and an initial electron transport layer sequentially formed on the surface of the positive electrode layer. The positive electrode layer and the perovskite layer are scribed with P1 lines to form a plurality of positive electrodes and perovskite functional layers, and the second TGV via (342) is exposed to form a sub-cell precursor. The negative electrode is deposited on the surface of the sub-cell precursor, and the negative electrode is electrically connected to the second TGV via (342).

10. The application of a perovskite solar cell (100) as described in any one of claims 1 to 5 or a perovskite solar cell (100) prepared by any one of claims 6 to 9 in a power generation device.

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