Gel memristor array and preparation method and application thereof

Abstract

The invention discloses a gel memristor array and a preparation method and application thereof. The gel memristor array comprises a substrate, a conductive Cross-bar circuit and a gel taper hole array, a polyelectrolyte gel structure is located in a first end opening to a second end opening and completely fills the conductive circuit, and a neutral gel structure is located outside the first end opening and connected with the conductive circuit. The gel memristor array disclosed by the invention has picojoule-level power consumption and relatively low working potential. When pulse potential stimulation is applied to the memristor, dipulse facilitation and dipulse inhibition effects similar to neuronal synapses can be generated, and meanwhile, due to the existence of the gel interface ion effect, effective regulation and control on the plasticity capacity of a system can be realized. The gel memristors are interconnected through the Cross-bar structure to form the gel memristor array, the gel memristor sites on the gel memristor array can work independently in a complementary crosstalk mode, and the functions of electric signal writing and conductivity modulation can be achieved.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of electronic device preparation, and particularly relates to a gel memristor array and a preparation method and application thereof. BACKGROUND

[0002] The resistance of a memristor changes with the amount of charge flowing through it, and by adjusting its resistance, the adjustment of synaptic strength can be achieved, thereby simulating the plasticity of biological synapses. The non-volatile storage characteristics of the memristor enable the neural network to retain the learning results in the power-off state. In solid-state memristors, numerous examples show that by interconnecting the memristors in a Cross-bar structure, the matrix multiplication operation can be realized by controlling the conductance of the matrix. By simulating the working principle of biological neural networks, such arrays can realize hardware-level implementation of computing paradigms such as convolutional neural networks, reservoir computing neural networks, and spiking neural networks, and show the energy efficiency advantage of memristor hardware networks compared to traditional CMOS systems. Fluid memristors are a new type of memristor based on aqueous solution as the base and ions as the carrier, which have better biocompatibility and lower power consumption compared to traditional memristors. However, due to the amorphous nature of the water environment and the difficulty of achieving high-density integrated packaging, it is still a major challenge to build an integrated nanofluidic memristor array. Limited by this bottleneck, the scale expansion of nanofluidic memristors still hinders their application in hardware-level computing. Therefore, it is necessary to develop a fluid memristor preparation method that can be used for high-density integration. SUMMARY

[0003] The purpose of the present application is to provide a gel memristor array and a preparation method and application thereof. By filling a polyelectrolyte gel in a confined channel and externally adding a neutral gel to form a connected confined gel memristor, this construction strategy solves the problem of the difficulty of integrating fluid memristors.

[0004] In a first aspect, the present application provides a gel memristor array, comprising: a substrate having a first surface and a second surface opposite to each other; a conductive Cross-bar circuit comprising a plurality of first conductive circuits arranged in parallel on the first surface and a plurality of second conductive circuits arranged in parallel on the second surface, the first conductive circuits and the second conductive circuits intersecting each other in a grid shape, wherein the line structure of the first conductive circuits and the second conductive circuits at each intersection is arc-shaped; The gel cone-shaped hole array comprises a plurality of cone-shaped holes, each of which is arranged in an arc structure at the intersection of the first and second conductive lines, each of which penetrates the first and second surfaces and has oppositely arranged first and second end openings, the diameter of the first end opening is smaller than that of the second end opening, the cone-shaped hole is completely filled with a polyelectrolyte gel structure, and the polyelectrolyte gel structure is connected with the second conductive line outside the second port, and the first end opening is provided with a neutral gel structure and the neutral gel structure is connected with the first conductive line.

[0005] Further, the monomers of the polyelectrolyte gel include one or more of 1-vinyl-3-butyl imidazole bromide, 3-sulfopropyl acrylate potassium salt, acrylic acid, and methacrylic acid. The monomers of the neutral gel include one or more of agarose, acrylamide, chitosan, and gelatin.

[0006] Still further, the gel memristor array satisfies at least one of the following conditions: (a) the diameter of the first end opening is 0.01-15 microns; (b) the diameter of the second end opening is 20-50 microns; (c) the size of the polyelectrolyte gel structure and the neutral gel structure is 0.01-5 mm respectively; (d) the distance between two adjacent lines in the first and second conductive lines is 20 microns-5 mm; (e) the thickness of the substrate is 7.5 microns-2 mm; (f) the line width in the conductive Cross-bar line is 1 micron-1 mm.

[0007] Optionally, the substrate is a flexible substrate; preferably, the material of the substrate is selected from any one of polyimide, polyurethane, polyethylene terephthalate, and polydimethylsiloxane.

[0008] Optionally, the material of the conductive line is selected from any one of any proportion of conductive silver / silver chloride, conductive silver paste, conductive gold paste, and conductive platinum paste.

[0009] In a second aspect, the present application provides a preparation method of the gel memristor array of any one of the above, comprising the following steps: S1, providing the substrate; S2, printing the first and second conductive lines on the first and second surfaces of the substrate respectively to obtain the conductive Cross-bar line; S3, at the intersection of the first conductive circuit and the second conductive circuit, a pointed hole is etched by photolithography, first, a polyelectrolyte gel monomer pre-polymer solution is dropped into the second end opening, and the polyelectrolyte gel structure is formed by photopolymerization, second, a neutral gel monomer pre-polymer solution is dropped into the first end opening, and the neutral gel structure is formed by photopolymerization, thereby obtaining the gel pointed hole array.

[0010] In one embodiment of the present application, the polyelectrolyte gel monomer pre-polymer solution is composed of monomer 1-vinyl-3-butyl imidazole bromide, photoinitiator α-ketoglutaric acid, crosslinking agent N,N'-methylene bisacrylamide and solvent; The mass ratio of the monomer to the solvent is 1:(0.2-2); The mass ratio of the monomer to the photoinitiator is 1:(0.005-0.03); The mass ratio of the monomer to the crosslinking agent is 1:(0.005-0.03); The solvent is a KCl aqueous solution or a NaCl aqueous solution with a concentration of 0.1-1000 mM; The time for photopolymerization is 12-20 s; The method further comprises a step of encapsulation with light-cured glue after photopolymerization.

[0011] In one embodiment of the present application, the neutral gel pre-polymer solution is composed of monomer agarose, monomer acrylamide, photoinitiator α-ketoglutaric acid, crosslinking agent N,N'-methylene bisacrylamide and solvent; The concentration of the agarose in the solvent is 5 mg / mL-40 mg / mL; The mass ratio of the agarose to the acrylamide is 0.015:(0.1-0.3); The mass ratio of the photoinitiator to the monomer is 1:(0.005-0.03); The mass ratio of the crosslinking agent to the monomer is 1:(0.005-0.03); The solvent is a KCl aqueous solution or a NaCl aqueous solution with a concentration of 0.1-1000 mM; The time for photopolymerization is 6-10 s; The method further comprises a step of encapsulation with light-cured glue after photopolymerization.

[0012] Optionally, the printing adopts silk screen printing or inkjet printing; The etching is selected from any one of laser etching, chemical track etching, focused ion beam (FIB) and electron beam lithography (EBL).

[0013] In a third aspect, the present application provides use of the gel memristor array of any one of the above or the gel memristor array prepared by the method of any one of the above in neuromorphic computing.

[0014] The present application has the following advantages: The gel memristor of the present application can realize short-term plasticity functions such as double-pulse facilitation, double-pulse depression, pulse number-dependent plasticity, pulse width-dependent plasticity, and other function simulations. Further, the gel memristor is interconnected by a Cross-bar structure to form a gel memristor array, which can realize electrical signal writing at gel memristor sites and neuromorphic computing. The gel memristor array of the present application can simulate the dynamic regulation of synaptic weights, realize biological plasticity regulation, and help the realization of hardware neural networks. In addition, the high stability and low power consumption characteristics of the device make it suitable for large-scale neural network computing, improve the energy efficiency ratio, and promote the development of artificial intelligence hardware. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 Figure 1 is a structural schematic diagram of the gel memristor array of the present application.

[0016] The following are the meanings of the respective numerical markers: 100 - substrate; 101 - first surface; 102 - second surface; 200 - conductive Cross-bar circuit; 201 - first conductive circuit; 202 - second conductive circuit; 300 - gel cone-shaped hole array; 301 - cone-shaped hole; 302 - first open end; 303 - second open end; 304 - polyelectrolyte gel structure; 305 - neutral gel structure.

[0017] Figure 2 Figure 2 is a flow chart of the preparation of the gel memristor array of the present application.

[0018] Figure 3 Figure 3 is a microscope image of the printed line width of the conductive circuit and scanning electron microscope images of the first open end and the second open end in one embodiment of the present application. The diameter of the first open end is 5 microns, and the diameter of the second open end is 30 microns.

[0019] Figure 4 Figure 4 is a physical diagram of the gel memristor array in one embodiment of the present application.

[0020] Figure 5 Figure 5 is a voltammogram test result diagram of a single gel site in one embodiment of the present application.

[0021] Figure 6 Figure 6 is the voltammogram response of the gel memristor under a triangular wave in one embodiment of the present application: Figure 6 A - current response curve of the gel memristor under continuous negative pulse voltage;Figure 6 Current response curve of B-gel memristor under continuous positive pulse voltage; Figure 6 Current response curve of C-gel memristor under continuous negative pulse voltage, continuous positive pulse voltage, and the change of current response curve with pulse interval.

[0022] Figure 7 In one embodiment of the present application, the current response change curve of the gel memristor with the number of pulses and the continuous write and erase conductance change curve: Figure 7 Current response change curve of A-gel memristor with the number of pulses under continuous negative pulse voltage; Figure 7 Current response change curve of B-gel memristor with pulse width under continuous negative pulse voltage; Figure 7 C-gel memristor continuous write and erase conductance change curve. DETAILED DESCRIPTION

[0023] In order to make the objects, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0024] In the description of the present application, it should be noted that the orientation or position relationship indicated by the terms "up", "down", "left", "right" and the like is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the system or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" and the like are used to distinguish parts, and do not have special meanings unless otherwise stated. They cannot be understood as indicating or implying relative importance.

[0025] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "setting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral connection; it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium, or internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0026] As described in the background section, the scaling problem of nanofluidic memristors still hinders their application in hardware-level computing, and there is an urgent need to develop high-density integrated fluidic memristors. This invention can quickly achieve array-based construction by constructing confined gel memristors.

[0027] Part One, such as Figure 1 As shown, the present invention discloses a gel memristor array, comprising: a substrate 100 having a first surface 101 and a second surface 102 opposite to each other; a conductive cross-bar circuit 200, including a plurality of parallel first conductive lines 201 disposed on the first surface and a plurality of parallel second conductive lines 202 disposed on the second surface, the first conductive lines 201 and the second conductive lines 202 intersecting each other in a grid pattern, wherein the circuit structure of the first conductive lines 201 and the second conductive lines 202 at each intersection is arc-shaped; and a gel conical aperture array 300, containing... The device includes a plurality of tapered holes 301, each tapered hole being disposed within an arc-shaped structure at the intersection of the first conductive line and the second conductive line. Each tapered hole penetrates the first surface and the second surface and has a first end opening 302 and a second end opening 303 disposed opposite to each other. The diameter of the first end opening 302 is smaller than the diameter of the second end opening 303. The tapered hole is completely filled with a polyelectrolyte gel structure 304, and the polyelectrolyte gel structure is connected to the second conductive line outside the second port. A neutral gel structure 305 is provided outside the first end opening, and the neutral gel structure is connected to the first conductive line.

[0028] Based on the above technical solutions, the gel memristor array (gel memristor array device) of the present invention has picojoule-level power consumption and a low operating potential. When stimulated with a pulse potential, the memristor of the present invention can generate a double-pulse facilitating and double-pulse inhibiting effect similar to that of a neuronal synapse. Simultaneously, due to the presence of ionic effects at the gel interface, the plasticity of the system can be effectively controlled. Furthermore, this confined gel structure solves the problem of integrating fluid memristors into arrays. By interconnecting the confined gel memristors through a cross-bar structure, a gel memristor array is formed. The gel memristor sites on the array can operate independently with complementary crosstalk, enabling electrical signal writing and conductivity modulation functions.

[0029] Crucially, this invention solves the problem of integrating fluid memristors by filling the confined channels with polyelectrolyte gel and adding neutral gel externally to form a connected confined gel memristor.

[0030] According to embodiments of the present invention, the monomer of the polyelectrolyte gel includes one or more of 1-vinyl-3-butylimidazolium bromide, potassium 3-sulfopropyl acrylate, acrylic acid, and methacrylic acid; preferably, the polyelectrolyte gel is made from a prepolymer containing 1-vinyl-3-butylimidazolium bromide, a photoinitiator, and a crosslinking agent; wherein the photoinitiator may specifically be α-ketoglutaric acid, and the crosslinking agent may specifically be N,N'-methylenebisacrylamide.

[0031] According to embodiments of the present invention, the monomers of the neutral gel include one or more of agarose, acrylamide, chitosan, and gelatin. Preferably, the neutral gel is made from a prepolymer containing agarose, acrylamide, a photoinitiator, and a crosslinking agent; wherein the photoinitiator may specifically be α-ketoglutaric acid, and the crosslinking agent may specifically be N,N'-methylenebisacrylamide. The neutral gel can serve to form interconnections.

[0032] The structural formula of 1-vinyl-3-butylimidazolium bromide is as follows:

[0033] The structural formulas of acrylamide and agarose are as follows:

[0034] According to an embodiment of the present invention, the gel memristor array satisfies at least one of the following conditions: (a) The diameter of the first end opening is 0.01 to 15 micrometers; (b) The diameter of the second end opening is 20 to 50 micrometers; (c) The dimensions of the polyelectrolyte gel structure and the neutral gel structure are 0.01–5 mm, respectively; wherein, as shown in the figure... Figure 1 As shown, the size of the polyelectrolyte gel structure refers to the vertical distance from the highest point at the top to the opening at the first end; the size of the neutral gel structure refers to the vertical distance from the lowest point at the bottom to the opening at the first end. (d) The distance between two adjacent lines in the first conductive line and the second conductive line is 20 micrometers to 5 millimeters; (e) The thickness of the substrate is 7.5 micrometers to 2 millimeters; (f) In the conductive cross-bar circuit, the line width is 1 micrometer to 1 millimeter.

[0035] According to an embodiment of the present invention, the substrate is a flexible substrate; preferably, the material of the substrate is selected from any one of polyimide (PI), polyurethane (PU), polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS).

[0036] According to an embodiment of the present application, the material of the conductive line is selected from any proportion of conductive silver / silver chloride, conductive silver paste, conductive gold paste, and conductive platinum paste.

[0037] In the second part, the present application provides a preparation method of the gel memristor array described above, comprising the following steps: S1, providing the substrate; S2, printing the first conductive line and the second conductive line on the first surface and the second surface of the substrate respectively, to obtain the conductive Cross-bar line; S3, performing point etching on the tapered hole at the intersection of the first conductive line and the second conductive line, first, dropping a polyelectrolyte gel monomer pre-polymer solution at the opening of the second end, and forming the polyelectrolyte gel structure through photopolymerization, second, dropping a neutral gel monomer pre-polymer solution at the opening of the first end, and forming the neutral gel structure through photopolymerization, to obtain the gel tapered hole array.

[0038] According to an embodiment of the present application, the printing is performed by screen printing or inkjet printing.

[0039] According to an embodiment of the present application, the etching is selected from laser etching, chemical track etching, focused ion beam (FIB), and electron beam lithography (EBL).

[0040] According to an embodiment of the present application, the polyelectrolyte gel monomer pre-polymer solution is composed of monomer 1-vinyl-3-butyl imidazole bromide, photoinitiator α-ketoglutaric acid, crosslinking agent N,N'-methylene bisacrylamide, and solvent; the mass ratio of the monomer to the solvent is 1:(0.2-2); the mass ratio of the monomer to the photoinitiator is 1:(0.005-0.03), such as 1:0.02; the mass ratio of the monomer to the crosslinking agent is 1:(0.005-0.03), such as 1:0.02; the solvent is a KCl aqueous solution or a NaCl aqueous solution with a concentration of 0.1-1000 mM, such as 10 mM KCl; the photopolymerization time is 12-20 s, such as 16 s; the method further comprises a step of encapsulating with light-curing glue after photopolymerization, and the light-curing time is preferably 40 s.

[0041] According to an embodiment of the present application, the neutral gel prepolymer solution is composed of monomer agarose, monomer acrylamide, photoinitiator alpha-ketoglutaric acid, crosslinking agent N,N'-methylene bisacrylamide and solvent; the concentration of the agarose in the solvent is 5 mg / mL-40 mg / mL, such as 15 mg / mL; the mass ratio of the agarose to the acrylamide is 0.015:(0.1-0.3), such as 0.015:0.1; the mass ratio of the monomer to the photoinitiator is 1:(0.005-0.03), such as 1:0.03; the mass ratio of the monomer to the crosslinking agent is 1:(0.005-0.03), such as 1:0.03; the solvent is KCl aqueous solution or NaCl aqueous solution with a concentration of 0.1-1000 mM, such as 10 mM KCl; the time for photopolymerization is 6-10 s, such as 8 s; the method further comprises a step of encapsulation with light-curing glue after photopolymerization, and the light-curing time is preferably 40 s.

[0042] In a third aspect, the present application provides use of the gel memristor array of any one of the above or the gel memristor array prepared by the method of any one of the above in neuromorphic computing.

[0043] The present application will be further described in details in connection with the specific embodiments. The embodiments given herein are only for the purpose of illustrating the present application and are not intended to limit the scope of the present application. The embodiments provided below can serve as a guide for further improvement by those of ordinary skill in the art and do not in any way constitute a limitation on the present application.

[0044] In the following examples, the methods used are conventional methods unless otherwise specified, and are performed according to the techniques or conditions described in the literature in the art or according to the product instructions. In the following examples, the materials, reagents, etc. used are commercially available unless otherwise specified.

[0045] Example 1, 1. Preparation of gel memristor array The gel memristor array is prepared according to the flowchart as shown in Figure 2 First, a 15 mm*15 mm PI film is printed with Cross-bar Ag / AgCl conductive circuit on both sides. The PI film printed with the conductive circuit is prepared with a conical hole array by laser etching method. Figure 2 i).

[0046] Five microliters of 1-vinyl-3-butylimidazolium bromide monomer prepolymer solution were added dropwise to the second end opening. The prepolymer solution formulation was as follows: 500 mg 1-vinyl-3-butylimidazolium bromide, 10 mg photoinitiator α-ketoglutaric acid, 10 mg crosslinking agent N,N'-methylenebisacrylamide, and 300 microliters 10 mM KCl. UV polymerization was performed for 16 seconds to form gel droplets. These droplets were then further encapsulated with UV-curable adhesive (Zhuolide D-0082 adhesive) and cured for 40 seconds. Figure 2 ii).

[0047] 3 μL of neutral gel monomer prepolymer solution was added dropwise to the first end opening. The prepolymer solution formulation was as follows: 15 mg agarose was added to 1 mL of 10 mM KCl and heated at 95°C with continuous stirring until dissolved. The temperature was then lowered to 85°C and heated with continuous stirring. Further, 100 mg acrylamide, 4 mg photoinitiator α-ketoglutarate, and 4 mg crosslinking agent N,N'-methylenebisacrylamide were added to the solution to prepare the neutral gel monomer prepolymer solution. Gel droplets were formed by cooling, and then further cured by UV light for 8 s to form a double-network gel droplet. Finally, the droplets were encapsulated with UV-cured adhesive (Zhuolide D-0082 adhesive) for 40 s. Figure 2 iii).

[0048] like Figure 3 As shown, the printed line width of the conductive circuit is 250 micrometers, the opening at the first end is 5 micrometers, the opening at the second end is 30 micrometers, the dimensions (thickness in the vertical direction) of the polyelectrolyte gel structure and the neutral gel structure are both 2-3 mm, the distance between two adjacent lines in the first and second conductive circuits is 0.01 mm-3 mm, the thickness of the substrate is 7.5 micrometers-2 mm, and the line width is 1 micrometer-1 mm.

[0049] Packaged devices such as Figure 4 As shown, the individual gel sites are insulated from each other, enabling high-density integration with a small device size. Electrical testing is performed on the device via conductive copper wires connected to printed circuit terminals.

[0050] 2. Voltammetric Characteristic Test of Single Gel Site A potential was applied and the current was recorded using a Chenhua 660e workstation. The triangular wave scan range was -1V to 1V, with a scan rate of 50mV / s. I-V Volt-ampere characteristics such as Figure 5 As shown, the gel memristor has a unique crossover point and a certain hysteresis area, which satisfies the characteristics of a memristor.

[0051] 3. Short-term plasticity function simulation A potential was applied using a Heka ELP3 patch-clamp amplifier, and the current was recorded. By recording the current magnitude, the short-term plasticity of the gel memristor was determined. Specifically, the short-term plasticity of the device was evaluated by fitting the retention time obtained from the decay trend of the current under continuous potential pulses with the pulse interval.

[0052] The settings include a pulse potential of 0 V when there is no pulse, a pulse potential of Vp = ±0.1~2 V, a pulse width of 5 ms~100 ms, and a pulse interval of Δt = 1~1000 ms.

[0053] like Figure 6 A, Figure 6 As shown in Figure B, the device's pulse potential is set to Vp = 1 V or -1 V, and the potential is set to 0 V when there is no pulse to ensure that the device maintains a steady state under these conditions. The pulse width of a single pulse is tp = 10 ms, and the pulse interval is Δt = 10 ms. Figure 6 As shown in Figure C, the ion current response under continuous pulses is recorded by adjusting the value of the pulse interval Δt. By plotting the change of ion current with the decay of Δt over the pulse interval, the retention time of the gel memristor device can be obtained by fitting a double exponential function, so as to quantitatively describe the short-term plasticity of the device.

[0054] like Figure 7 As shown in Figure A, the pulse potential of the device is set to Vp = -1 V, the pulse width of a single pulse is tp = 10 ms, and the pulse interval is Δt = 10 ms. By changing the number of pulses and recording the ion current response under continuous pulses (1, 2, 3, 5, 10, 20), it can be seen that as the number of pulses increases, the ion current of the device increases, which is consistent with the pulse number-dependent plasticity.

[0055] like Figure 7 As shown in Figure B, the pulse potential of the device is set to Vp = -1 V and the pulse interval Δt = 10 ms. By changing the pulse width tp of a single pulse, the ion current response under continuous pulses is recorded. It can be seen that as the pulse width tp increases, the ion current of the device increases, which is consistent with the pulse width-dependent plasticity.

[0056] like Figure 7 As shown in Figure C, the write voltage of the device is set to Vp = -1 V, the erase voltage is set to Vp = 0.3 V, and the read voltage is set to 0.1 V. By recording the ion current response under continuous pulses, it can be seen that the gel memristor has good continuous read and write capabilities, and can distinguish 65 continuous read and write states.

[0057] The present invention has been described in detail above. Those skilled in the art will recognize that the invention can be practiced in a wide range of ways with equivalent parameters, concentrations, and conditions without departing from its spirit and scope. While specific embodiments have been provided, it should be understood that further modifications can be made to the invention. In summary, according to the principles of the invention, this application is intended to include any changes, uses, or improvements to the invention, including modifications made using conventional techniques known in the art that depart from the scope disclosed herein.

Claims

1. A gel memristor array, characterized in that, include: The substrate has a first surface and a second surface that are opposite to each other; A conductive cross-bar circuit includes a plurality of parallel first conductive lines disposed on the first surface and a plurality of parallel second conductive lines disposed on the second surface. The first conductive lines and the second conductive lines intersect each other in a grid pattern, wherein the circuit structure of the first conductive lines and the second conductive lines at each intersection is arc-shaped. A gel conical aperture array includes a plurality of conical apertures. Each conical aperture is disposed within an arc-shaped structure at the intersection of the first conductive line and the second conductive line. Each conical aperture penetrates the first surface and the second surface and has a first end opening and a second end opening disposed opposite to each other. The diameter of the first end opening is smaller than the diameter of the second end opening. The conical aperture is completely filled with a polyelectrolyte gel structure, and the polyelectrolyte gel structure is connected to the second conductive line outside the second port. A neutral gel structure is disposed outside the first end opening, and the neutral gel structure is connected to the first conductive line.

2. The gel memristor array according to claim 1, characterized in that: The monomers of the polyelectrolyte gel include one or more of 1-vinyl-3-butylimidazolium bromide, potassium 3-sulfopropyl acrylate, acrylic acid, and methacrylic acid; The monomers of the neutral gel include one or more of agarose, acrylamide, chitosan, and gelatin.

3. The gel memristor array according to any one of claims 1-2, characterized in that: The gel memristor array satisfies at least one of the following conditions: (a) The diameter of the first end opening is 0.01 to 15 micrometers; (b) The diameter of the second end opening is 20 to 50 micrometers; (c) The dimensions of the polyelectrolyte gel structure and the neutral gel structure are 0.01–5 mm, respectively; (d) The distance between two adjacent lines in the first conductive line and the second conductive line is 20 micrometers to 5 millimeters; (e) The thickness of the substrate is 7.5 micrometers to 2 millimeters; (f) In the conductive cross-bar circuit, the line width is 1 micrometer to 1 millimeter.

4. The gel memristor array according to any one of claims 1-3, characterized in that: The substrate is a flexible substrate; preferably, the material of the substrate is selected from any one of polyimide, polyurethane, polyethylene terephthalate, and polydimethylsiloxane.

5. The gel memristor array according to any one of claims 1-4, characterized in that: The material of the conductive circuit is selected from any one of conductive silver / silver chloride, conductive silver paste, conductive gold paste, and conductive platinum paste in any proportion.

6. A method for preparing a gel memristor array according to any one of claims 1-5, comprising the following steps: S1. Provide the substrate; S2. Print the first conductive line and the second conductive line on the first surface and the second surface of the substrate respectively to obtain the conductive cross-bar circuit; S3. At the intersection of the first conductive line and the second conductive line, a conical hole is etched at a fixed point. First, a polyelectrolyte gel monomer prepolymer is dropped onto the second end opening, and the polyelectrolyte gel structure is formed by photopolymerization. Then, a neutral gel monomer prepolymer is dropped onto the first end opening, and the neutral gel structure is formed by photopolymerization, thus obtaining the gel conical hole array.

7. The method for fabricating a gel memristor array according to claim 6, characterized in that: The polyelectrolyte gel monomer prepolymer solution is composed of monomer 1-vinyl-3-butylimidazolium bromide, photoinitiator α-ketoglutarate, crosslinking agent N,N'-methylenebisacrylamide, and solvent. The mass ratio of the monomer to the solvent is 1:(0.2-2); The mass ratio of the monomer to the photoinitiator is 1:(0.005~0.03); The mass ratio of the monomer to the crosslinking agent is 1:(0.005~0.03); The solvent is an aqueous solution of KCl or NaCl with a concentration of 0.1–1000 mM; The photopolymerization time is 12–20 seconds; The method further includes a step of encapsulation with a photocurable adhesive after photopolymerization.

8. The method for preparing a gel memristor array according to any one of claims 6-7, characterized in that: The neutral gel prepolymer solution is composed of monomer agarose, monomer acrylamide, photoinitiator α-ketoglutarate, crosslinking agent N,N'-methylenebisacrylamide, and solvent. The concentration of agarose in the solvent is 5 mg / mL to 40 mg / mL; The mass ratio of agarose to acrylamide is 0.015:(0.1 to 0.3). The mass ratio of the photoinitiator to the monomer is 1:(0.005~0.03); The mass ratio of the crosslinking agent to the monomer is 1:(0.005~0.03); The solvent is an aqueous solution of KCl or NaCl with a concentration of 0.1–1000 mM; The photopolymerization time is 6–10 seconds; The method further includes a step of encapsulation with a photocurable adhesive after photopolymerization.

9. The method for preparing a gel memristor array according to any one of claims 6-8, characterized in that: The printing is performed using screen printing or inkjet printing. The etching is selected from any one of laser etching, chemical track etching, focused ion beam etching, and electron beam lithography.

10. The application of the gel memristor array according to any one of claims 1-5 or the gel memristor array prepared by the method according to any one of claims 6-9 in neuromorphic computing.

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