Semiconductor three-dimensional deposition process simulation method and device and electronic equipment

Abstract

The invention provides a semiconductor three-dimensional deposition process simulation method and device and electronic equipment, and relates to the technical field of semiconductor simulation, and the method comprises the steps: extracting a level set curved surface of an initial substrate from a sign function with distance of an initial computational domain through a three-dimensional contour surface extraction algorithm; respectively constructing a closed air volume boundary of a new air area and a closed deposition volume boundary of a new deposition material area based on the level set curved surface; and gridding the closed air volume boundary and the closed deposition volume boundary, and stitching the generated grids back to the initial computational domain to obtain a three-dimensional deposition result which is used for accurately extracting the three-dimensional deposition result.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor simulation, in particular to a semiconductor three-dimensional deposition process simulation method and device and electronic equipment. BACKGROUND

[0002] The semiconductor industry usually uses process simulation software to shorten the design and development cycle and reduce the cost in the process of semiconductor device, and the accuracy of the simulation result is an important factor affecting the structure and performance of the device. When the device feature size is reduced to the nanometer scale, and the FinFET, GAA (gate-all-around transistor) and other architectures are widely used, the electrical characteristics of the device show strong nonlinear coupling effects in the three dimensions of channel width, length and height. Through three-dimensional process simulation, the advanced manufacturing process steps can be truly reproduced, and the final topography, doping distribution and stress state of the device can be accurately predicted, thereby providing a reliable physical basis for subsequent three-dimensional device simulation.

[0003] In related technologies of three-dimensional semiconductor process simulation, a signed distance function is usually obtained based on the level set method for three-dimensional deposition process. Process simulation is composed of multiple process steps, and the process of converting process simulation steps into curved surface representation has certain challenges. SUMMARY

[0004] The problem solved by the present application is how to accurately extract a three-dimensional deposition result.

[0005] To solve the above problems, the present application provides a semiconductor three-dimensional deposition process simulation method, device and electronic equipment.

[0006] In a first aspect, the present application provides a semiconductor three-dimensional deposition process simulation method, comprising: extracting a level set surface of an initial substrate from a signed distance function of an initial calculation domain by a three-dimensional isosurface extraction algorithm; based on the level set surface, constructing a closed air volume boundary of a new air region and a closed deposition volume boundary of a new deposition material region, respectively; meshing the closed air volume boundary and the closed deposition volume boundary, and stitching the generated mesh back to the initial calculation domain to obtain a three-dimensional deposition result.

[0007] Optionally, before the level set surface of the initial substrate is extracted from the signed distance function of the initial calculation domain by the three-dimensional isosurface extraction algorithm, the method further comprises: performing three-dimensional deposition process simulation on a deposition process on the initial substrate in the initial calculation domain to calculate the signed distance function of a deposition front, wherein the deposition front represents an interface formed by air and deposition material.

[0008] Optionally, the extracting the initial base's level set surface from the signed distance function of the initial computational domain by the three-dimensional isosurface extraction algorithm comprises: traversing the three-dimensional discrete grid cells of the signed distance function; obtaining the interface intersection points on the edges of the three-dimensional discrete grid cells by linear interpolation according to the sign change of the function value at the vertices of the three-dimensional discrete grid cells relative to the zero isosurface; generating the triangular facets according to the interface intersection points, and splicing the triangular facets to form the closed level set surface.

[0009] Optionally, the constructing the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region based on the level set surface respectively comprises: obtaining the new air grid upper surface based on the level set surface by a preset algorithm; combining the level set surface and the new air grid upper surface to obtain the closed air volume boundary.

[0010] Optionally, the combining the level set surface and the new air grid upper surface to obtain the closed air volume boundary comprises: cutting the boundary of the level set surface to obtain a coordinate sequence connected at the head and tail and in order as a level set surface reflection boundary; sequentially combining the level set surface reflection boundary and the new air grid upper surface to obtain a lateral air stitching surface; combining the level set surface as a bottom surface, the new air grid upper surface as a top surface, and the lateral air stitching surface to obtain the closed air volume boundary.

[0011] Optionally, the constructing the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region based on the level set surface respectively comprises: extracting all exposed surfaces in contact with air in the initial computational domain to obtain a new deposition volume lower surface; combining the level set surface and the new deposition volume lower surface to obtain the closed deposition volume boundary.

[0012] Optionally, the combining the level set surface and the new deposition volume lower surface to obtain the closed deposition volume boundary comprises: cutting the boundary of the new deposition volume lower surface to obtain a coordinate sequence connected at the head and tail and in order as a deposition volume lower surface reflection boundary; sequentially combining the deposition volume lower surface reflection boundary and the new deposition volume lower surface to obtain a lateral volume stitching surface; The bottom surface of the newly deposited volume is taken as a bottom surface, the level set surface is taken as a top surface, and the lateral volume stitching surface is combined to obtain the boundary of the closed deposited volume.

[0013] Optionally, the griding of the closed air volume boundary and the closed deposited volume boundary, and the stitching of the generated grid back to the initial calculation domain to obtain the three-dimensional deposition result include: The air grid part covered by the newly deposited region in the initial calculation domain is removed, and the newly deposited region grid after tetrahedralization is embedded into the corresponding position of the initial calculation domain with the new air region grid to obtain the three-dimensional deposition result.

[0014] In a second aspect, the present application provides a semiconductor three-dimensional deposition process simulation device, comprising: The extraction module is configured to extract a level set surface from the signed distance function of the initial calculation domain by a three-dimensional isosurface extraction algorithm. The construction module is configured to construct a closed air volume boundary of a new air region and a closed deposited volume boundary of a newly deposited material region based on the level set surface. The generation module is configured to grid the closed air volume boundary and the closed deposited volume boundary, and stitch the generated grid back to the initial calculation domain to obtain a three-dimensional deposition result.

[0015] In a third aspect, the present application provides an electronic device comprising a memory and a processor. The memory is configured to store a computer program. The processor is configured to implement the semiconductor three-dimensional deposition process simulation method of the first aspect when executing the computer program.

[0016] The semiconductor three-dimensional deposition process simulation method of the present application has the following beneficial effects: The level set surface is extracted from the signed distance function by a three-dimensional isosurface extraction algorithm, the implicit condition describing the material interface is converted into an intuitive triangular mesh surface, and the geometric vertex and topological connection relationship are determined. The closed air volume boundary and the closed deposited volume boundary are constructed based on the level set surface to separate the deposition region and the air region, ensure volume conservation and interface continuity, and avoid morphology distortion. The generated grid is stitched back to the initial calculation domain, the new and old grids are consistent in nodes and topology at the shared boundary, the overall grid can completely cover the initial calculation domain, the newly added region restores the deposition front defined by the level set surface as the three-dimensional deposition result, which can preferably reflect the macroscopic outline of the deposition morphology and retain the complex structure at the nanoscale. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1A flowchart of a semiconductor three-dimensional deposition process simulation method according to an embodiment of the present application; Figure 2 Experimental results of a semiconductor three-dimensional deposition process simulation method according to an embodiment of the present application; Figure 3 An example diagram of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the above objectives, features and advantages of the present application more clear and comprehensible, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms, and should not be interpreted as being limited to the embodiments set forth herein, but rather, these embodiments are provided so as to make the present application more thorough and complete. It should be understood that the drawings and embodiments of the present application are merely for illustrative purposes, and are not intended to limit the scope of protection of the present application.

[0019] It should be understood that each of the steps recited in the method embodiments of the present application can be executed in different orders, and / or in parallel. In addition, the method embodiments can include additional steps and / or omit the execution of the steps shown. The scope of the present application is not limited in this respect.

[0020] As used herein, the term "comprises" and its variations are open-ended, meaning "includes but not limited to"; the term "based on" is "based, at least in part, on"; the term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments"; the term "optionally" means "optional embodiments". Related definitions of other terms will be given in the description below. It should be noted that the concepts mentioned in the present application as "first", "second", etc. are merely used to distinguish different devices, modules or units, and are not intended to limit the functions performed by these devices, modules or units or the sequence or interdependence of these functions.

[0021] It should be noted that the modification of "one" or "multiple" mentioned in the present application is illustrative rather than limiting, and those skilled in the art should understand that, unless otherwise explicitly indicated in the context, it should be understood as "one or more".

[0022] The names of the messages or information exchanged between the multiple devices in the embodiments of the present application are merely for illustrative purposes, and are not intended to limit the scope of these messages or information.

[0023] As Figure 1 shown, the semiconductor three-dimensional deposition process simulation method according to an embodiment of the present application comprises: Step S100, extracting the initial substrate's level set surface from the signed distance function of the initial computational domain by a three-dimensional isosurface extraction algorithm.

[0024] The signed distance function represents a scalar field function obtained after numerical simulation of the three-dimensional deposition process by the level set method. The value of the scalar field function at each point in space is the shortest Euclidean distance from the material-air interface, with a sign, where a positive value indicates that the point is in the air region, a negative value indicates that it is inside the deposited material, and a zero value corresponds to the interface itself, with good numerical stability, and is often used to track the evolution process of complex geometric interfaces.

[0025] The initial computational domain represents a three-dimensional simulation space containing the substrate to be processed and the surrounding air region. The boundary of the initial computational domain is usually consistent with the physical range of the process cavity or device unit. The level set surface of the initial substrate represents the geometric surface corresponding to the zero isosurface extracted from the signed distance function. The level set surface is used to represent the outer contour of the substrate material at the start of the deposition process.

[0026] The three-dimensional isosurface extraction algorithm represents a geometric processing method that can reconstruct a specified isosurface from a three-dimensional discrete scalar field. With the sampled values of the signed distance function on a regular grid as input, it outputs a closed or open surface mesh composed of triangular patches. In this embodiment, the three-dimensional isosurface extraction algorithm is used to convert the level set representation into a surface that can directly participate in geometric operations.

[0027] In one embodiment, the three-dimensional isosurface extraction algorithm includes the Marching Cubes algorithm, the Marching Tetrahedra algorithm, the Dual Contouring algorithm, the SurfaceNets algorithm, or other voxel or point cloud-based isosurface reconstruction methods.

[0028] By extracting the level set surface of the initial substrate, a starting interface consistent with the physical substrate can be established. Compared to directly using the original voxel data or a rough approximation surface, the method in the embodiment of the present application preserves the continuity and smoothness of the interface, avoiding process prediction deviations caused by geometric distortion.

[0029] Step S200, based on the level set surface, constructing a closed air volume boundary of the new air region and a closed deposition volume boundary of the new deposited material region, respectively.

[0030] The level set surface represents an explicit triangular mesh surface obtained from the signed distance function by the three-dimensional isosurface extraction algorithm, corresponding to the interface between the material and the air after the deposition process is completed. The level set surface is an open surface, and its boundary intersects with the lateral range of the original computational domain, forming a geometric demarcation for the division of new and old regions.

[0031] The closed air volume boundary of the new air region represents a complete closed shell surrounding the remaining air space after deposition. The closed sediment volume boundary of the new sediment material region represents a closed shell occupying the space of the newly deposited material.

[0032] Two closed volume boundaries share the same horizontal set surface, located on the upper and lower sides of the horizontal set surface respectively, complementing each other and without overlap. By constructing two boundaries, the portion of the original computational domain altered by the deposition process can be clearly divided into two sub-regions: newly added material and remaining air. This preserves the geometric integrity of the deposition morphology and avoids volume leakage or mesh distortion caused by improper interface treatment.

[0033] The method in this embodiment of the invention eliminates the need to reconstruct the entire original mesh, generating new closed volumes only for local areas affected by deposition, thus reducing the computational overhead of mesh updates. The construction of the closed volume boundary is based on a clear geometric correspondence, which is beneficial for subsequent tetrahedral subdivision to generate high-quality volume meshes.

[0034] Step S300: Mesh the closed air volume boundary and the closed deposition volume boundary, and stitch the generated mesh back into the initial computational domain to obtain the three-dimensional deposition result.

[0035] Meshing involves dividing the spatial region enclosed by two closed volume boundaries into a three-dimensional volume mesh, generating a discretized representation composed of tetrahedral elements. Meshing allows continuous geometric volumes to be transformed into computational meshes suitable for numerical simulations, preserving the original boundary's topological structure and geometric features.

[0036] The initial computational domain represents the global three-dimensional computational region defined before the start of the deposition process simulation, which includes the initial distribution of the substrate material and the surrounding air.

[0037] Stitching back to the initial computational domain means embedding and connecting the newly generated air region mesh and the deposition region mesh to their corresponding positions in the initial computational domain, according to geometric and topological consistency requirements, replacing the original parts that were altered by the process. After stitching, the entire computational domain forms a seamless, non-overlapping, and fully covered tetrahedral mesh model.

[0038] The three-dimensional deposition results represent the overall mesh after stitching, reflecting the actual morphology of the material at the end of the deposition process.

[0039] In this embodiment, a three-dimensional isosurface extraction algorithm is used to extract the horizontal set surface from the distance-signed function, transforming the implicit conditions describing the material interface into an intuitive triangular mesh surface, clarifying the geometric vertices and topological connections. Based on the horizontal set surface, closed air volume boundaries and closed deposition volume boundaries are constructed respectively, achieving separation between the deposition region and the air region, ensuring volume conservation and interface continuity, and avoiding morphological distortion. The generated mesh is stitched back into the initial computational domain, ensuring that the nodes and topology of the old and new meshes remain consistent at the shared boundaries. The overall mesh can completely cover the initial computational domain, and the newly added regions restore the deposition front defined by the horizontal set surface. As a three-dimensional deposition result, it can better reflect the macroscopic contour of the deposition morphology and preserve the complex structure at the nanoscale.

[0040] Optionally, before extracting the level set surface of the initial basis from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm, the method further includes: A three-dimensional deposition process simulation is performed on the deposition process on the initial substrate in the initial computational domain, and the distance sign function of the deposition front is calculated, wherein the deposition front represents the interface formed by air and deposition material.

[0041] The initial computational domain represents a three-dimensional space containing the initial substrate and the surrounding air region. The initial substrate refers to the material structure that exists before the process begins, and the surface of the initial substrate serves as the starting point for subsequent deposition and growth.

[0042] Three-dimensional deposition process simulations are based on physical or empirical models to simulate the gradual accumulation of materials on the substrate surface over time. The moving interface is tracked using the level set method, and by solving the corresponding evolution equations, a distance-signed function characterizing the deposition front position is obtained. The value of this function at each point in space is the shortest distance to the interface, and the sign is used to distinguish between air regions and deposited material regions.

[0043] The deposition front represents the dynamic interface between air and the deposition material, and its geometry evolves with changes in process conditions. A distance-signed function defines this front using a zero isosurface, reflecting the final deposition morphology at the end of the simulation.

[0044] By performing numerical simulation of the deposition process within the initial computational domain and outputting a distance-signed function, the interface formed by the initial substrate after virtual deposition can be expressed mathematically.

[0045] Optionally, the extraction of the level set surface of the initial basis from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm includes: Traverse the three-dimensional discrete mesh elements with the distance sign function; Based on the sign change of the function value at the vertex of the three-dimensional discrete mesh cell relative to zero, the interface intersection point is obtained by linear interpolation on the edge of the three-dimensional discrete mesh cell. Triangular facets are generated based on the intersection points of the interfaces, and the triangular facets are spliced ​​together to form the closed horizontal set surface.

[0046] In one embodiment, a distance-signed function is stored in the initial computational domain as a three-dimensional discrete grid, reflecting the distance from the corresponding spatial location to the deposition interface and the region it belongs to. Traversing the three-dimensional discrete grid cells means sequentially visiting all grid cells and determining whether an interface is crossed. The determination is based on the sign difference of the function values ​​at each vertex of the cell relative to zero: if the function values ​​at the two endpoints of an edge have opposite signs, it indicates that the deposition interface crosses the edge containing the interface.

[0047] On edges where the sign changes, the intersection point between the interface and the edge is calculated using linear interpolation. The interpolation is based on the ratio of the absolute values ​​of the function values ​​at both endpoints to determine the coordinates of the intersection point along the edge, thus obtaining the geometric sampling point of the interface within the grid cells.

[0048] Based on the interface intersections obtained within each grid cell, multiple triangular patches are generated according to preset topological connection rules. These triangular patches locally approximate the shape of the deposition interface within the cell, maintaining consistency in edges and vertices between adjacent cells. All triangular patches are then stitched together to form a continuous, closed horizontal set surface. This horizontal set surface serves as the geometric representation of the initial substrate after deposition, possessing clear topological relationships between vertices, edges, and faces.

[0049] Optionally, the construction of closed air volume boundaries for the new air region and closed deposition volume boundaries for the new deposition material region based on the horizontal set surface includes: A new air mesh upper surface is obtained based on the horizontal set surface using a preset algorithm; The closed air volume boundary is obtained by combining the horizontal set surface and the upper surface of the new air mesh.

[0050] In one embodiment, the new air mesh upper surface GasTop represents the geometric surface located above the horizontal set surface LvlSurface, used to enclose the top of the remaining air region. The new air mesh upper surface GasTop is generated by a preset algorithm. The preset algorithm ensures that the generated upper surface is consistent with the projection of the horizontal set surface LvlSurface in the lateral direction.

[0051] The horizontal set surface LvlSurface is combined with the upper surface of the new air mesh, representing the bottom and top surfaces respectively. Lateral closed surfaces are generated by connecting their corresponding boundaries, ultimately forming a closed shell that completely surrounds the new air region, namely the closed air volume boundary GasVolume.

[0052] Optionally, combining the horizontal curved surface and the upper surface of the new air mesh to obtain the closed air volume boundary includes: The boundary of the horizontal set surface is divided to obtain a connected and ordered coordinate sequence, which serves as the reflection boundary of the horizontal set surface. In sequence, the horizontal curved surface reflection boundary and the upper surface of the new air grid are combined to obtain the lateral air stitching surface; Using the horizontal curved surface as the bottom surface and the upper surface of the new air grid as the top surface, combined with the lateral air stitching surface, the closed air volume boundary is obtained.

[0053] The boundaries of the horizontal set surface (LvlSurface) are sorted to obtain a set of connected and ordered coordinate sequences, each corresponding to a direction. In this embodiment, the coordinate sequences are classified into four horizontal set surface reflection boundaries: LvlReflectLeft, LvlReflectRight, LvlReflectFront, and LvlReflectBack. In other embodiments, the number of coordinate sequences can be set according to actual needs, such as 2-6. The horizontal set surface and the horizontal set surface reflection boundaries are then stitched together in an orderly manner to form lateral air stitching surfaces. Since there are four horizontal set surface reflection boundaries, the number of lateral air stitching surfaces is the same as the number of horizontal set surface reflection boundaries, also four, represented as GasLeft, GasRight, GasFront, and GasBack.

[0054] Using the horizontal set surface LvlSurface as the bottom surface and the new air mesh surface GasTop as the top surface, combined with the generated lateral air stitching surface, these three elements together form a closed geometric shell, namely the closed air volume boundary GasVolume. The air volume boundary GasVolume completely surrounds the remaining air region after deposition and can be directly used for subsequent volume mesh generation. Utilizing the geometric correspondence between the original interface boundary and the upper surface, automatic closure and reconstruction of local air regions are achieved.

[0055] Optionally, the construction of closed air volume boundaries for the new air region and closed deposition volume boundaries for the new deposition material region based on the horizontal set surface includes: Within the initial computational domain, all exposed surfaces in contact with air are extracted to obtain the lower surface of the new deposition volume; The horizontal set surface and the lower surface of the new deposition volume are combined to obtain the closed deposition volume boundary.

[0056] In the initial computational domain, all exposed surfaces in contact with air represent the set of surface cells in the original mesh that are normal to air and not covered by other materials. The exposed surfaces constitute the outer surface of the material before the deposition process begins, and become the bottom support interface of the newly added material region after deposition, i.e., the lower surface (DepSurface) of the new deposition volume.

[0057] The horizontal aggregated surface LvlSurface is the material-air interface extracted after the deposition process simulation, representing the upper surface of the newly deposited layer. The horizontal aggregated surface LvlSurface is combined with the lower surface of the new deposition volume DepSurface, with LvlSurface as the top surface and DepSurface as the bottom surface, forming a complete closed shell that encloses the space of the newly deposited material, serving as the boundary of the closed deposition volume, DepVolume.

[0058] Optionally, combining the horizontal set surface and the lower surface of the new deposition volume to obtain the closed deposition volume boundary includes: The boundary of the lower surface of the new deposition volume is divided to obtain a connected and ordered coordinate sequence, which serves as the reflection boundary of the lower surface of the deposition volume. In sequence, the reflection boundary of the lower surface of the deposition volume and the lower surface of the new deposition volume are combined to obtain a lateral volume stitching surface; Using the lower surface of the new deposition volume as the bottom surface and the horizontal curved surface as the top surface, combined with the lateral volume stitching surface, the closed deposition volume boundary is obtained.

[0059] The boundary of the lower surface DepSurface of the new deposition volume is divided into segments. The open boundary curve is divided into multiple segments with connected ends and ordered coordinate sequences according to spatial orientation. Each segment corresponds to the edge region in one direction, which serves as the reflection boundary of the lower surface of the deposition volume. In this embodiment, the number of segments is four, so the reflection boundary of the lower surface of the deposition volume is also four segments: DepReflectLeft, DepReflectRight, DepReflectFront, and DepReflectBack.

[0060] The reflective boundary of the lower surface of the deposition volume and the horizontal aggregate surface LvlSurface are combined in sequence. For each reflective boundary segment, its boundary on the corresponding side of the horizontal aggregate surface LvlSurface is matched in sequence, and a connecting patch is generated between the two to form the lateral volume stitching surfaces DepLeft, DepRight, DepFront, and DepBack.

[0061] Using the lower surface DepSurface of the newly deposited volume as the bottom surface and the horizontal aggregate surface LvlSurface as the top surface, together with the generated lateral volume stitching surface, the three form a closed geometric shell, namely the closed depositional volume boundary DepVolume. The closed depositional volume boundary DepVolume fully describes the spatial extent occupied by the newly deposited material.

[0062] Optionally, the step of meshing the closed air volume boundary and the closed deposition volume boundary, and stitching the generated mesh back into the initial computational domain to obtain the three-dimensional deposition result includes: Remove the portion of the air mesh covered by the new deposition region in the initial computational domain, and embed the tetrahedralized new deposition region mesh and the new air region mesh into the corresponding positions in the initial computational domain to obtain the three-dimensional deposition result.

[0063] The closed air volume boundary and the closed deposition volume boundary represent the geometric extent of the remaining air region and the newly added material region after the deposition process, respectively. The closed air volume boundary and the closed deposition volume boundary are meshed, and the two closed volumes are discretized into volume meshes composed of tetrahedral elements using a tetrahedral partitioning method. The initial computational domain originally contained unupdated air meshes, a portion of which were located within the space occupied by the newly deposited region. This portion of the air mesh no longer exists after deposition and needs to be removed to reflect the actual material filling state. The tetrahedralized meshes of the newly deposited region and the meshes of the newly air region are embedded into the corresponding positions in the initial computational domain. The two newly generated volume meshes replace the removed portions in the initial computational domain according to their original spatial coordinates, and consistent node and topological connections are achieved at the boundaries. The embedded overall mesh covers the entire initial computational domain. The obtained 3D deposition result is the updated complete computational mesh, which reflects the spatial distribution of material and air at the end of the deposition process.

[0064] like Figure 2 As shown, to verify the effectiveness of the present invention, a nitride layer was deposited on a 0.5μm × 0.5μm × 1.0μm 3D silicon substrate. The old method generated incorrect meshes during nitride layer deposition, while the new method correctly processed the post-deposition mesh, obtaining the correct deposition results. This achieves the technical goal of characterizing the mesh boundary evolution in 3D deposition process simulation, enhancing the 3D applicability and stability of the software process simulation software.

[0065] An embodiment of the present invention provides a semiconductor three-dimensional deposition process simulation device, comprising: The extraction module is used to extract the level set surface from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm; The construction module is used to construct, based on the horizontal set surface, the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region, respectively. The generation module is used to mesh the closed air volume boundary and the closed deposition volume boundary, and stitch the generated mesh back into the initial computational domain to obtain the three-dimensional deposition result.

[0066] like Figure 3 As shown, an electronic device 300 provided in this embodiment of the invention includes a memory 310 and a processor 320; the memory 310 is used to store a computer program; the processor 320 is used to implement the semiconductor three-dimensional deposition process simulation method as described above when the computer program is executed.

[0067] Alternatively, an electronic device 300 includes a memory 310 and a processor 320 coupled to the memory 310; the memory 310 is configured to store a computer program; and the processor 320 is configured to perform the following operations when the computer program is executed: The level set surface of the initial basis is extracted from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm. Based on the horizontal set surface, the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region are constructed respectively. The closed air volume boundary and the closed deposition volume boundary are meshed, and the generated mesh is stitched back into the initial computational domain to obtain the three-dimensional deposition result.

[0068] This invention provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it implements the semiconductor three-dimensional deposition process simulation method described above.

[0069] Alternatively, a non-volatile computer-readable storage medium storing a computer program that, when executed by a processor, causes the processor to perform the following operations: The level set surface of the initial basis is extracted from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm. Based on the horizontal set surface, the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region are constructed respectively. The closed air volume boundary and the closed deposition volume boundary are meshed, and the generated mesh is stitched back into the initial computational domain to obtain the three-dimensional deposition result.

[0070] The present invention will now be described an electronic device 300 that can serve as a server or client of the present invention, which is an example of a hardware device that can be applied to various aspects of the present invention. Electronic device 300 is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. Electronic device 300 can also represent various forms of mobile devices, such as personal digital assistants, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0071] Electronic device 300 includes a computing unit that can perform various appropriate actions and processes based on a computer program stored in read-only memory (ROM) or a computer program loaded from a storage unit into random access memory (RAM). The RAM may also store various programs and data required for device operation. The computing unit, ROM, and RAM are interconnected via a bus. Input / output (I / O) interfaces are also connected to the bus.

[0072] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. The storage medium can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc. In this invention, the units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of the embodiments of this invention according to actual needs. Furthermore, the functional units in the various embodiments of this invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated units can be implemented in hardware or as software functional units.

[0073] While the present invention has been disclosed above, its scope of protection is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, and all such changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A method for simulating semiconductor three-dimensional deposition processes, characterized in that, include: The level set surface of the initial basis is extracted from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm. Based on the horizontal set surface, the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region are constructed respectively. The closed air volume boundary and the closed deposition volume boundary are meshed, and the generated mesh is stitched back into the initial computational domain to obtain the three-dimensional deposition result.

2. The semiconductor three-dimensional deposition process simulation method according to claim 1, characterized in that, Before extracting the level set surface of the initial basis from the distance-signed function of the initial computational domain using the three-dimensional isosurface extraction algorithm, the method further includes: A three-dimensional deposition process simulation is performed on the deposition process on the initial substrate in the initial computational domain, and the distance sign function of the deposition front is calculated, wherein the deposition front represents the interface formed by air and deposition material.

3. The semiconductor three-dimensional deposition process simulation method according to claim 1, characterized in that, The extraction of the level set surface of the initial basis from the distance-signed function of the initial computational domain using the three-dimensional isosurface extraction algorithm includes: Traverse the three-dimensional discrete mesh elements with the distance sign function; Based on the sign change of the function value at the vertex of the three-dimensional discrete mesh cell relative to zero, the interface intersection point is obtained by linear interpolation on the edge of the three-dimensional discrete mesh cell. Triangular facets are generated based on the intersection points of the interfaces, and the triangular facets are spliced ​​together to form the closed horizontal set surface.

4. The semiconductor three-dimensional deposition process simulation method according to any one of claims 1-3, characterized in that, The construction of closed air volume boundaries for the new air region and closed deposition volume boundaries for the new deposition material region based on the horizontal set surface includes: A new air mesh upper surface is obtained based on the horizontal set surface using a preset algorithm; The closed air volume boundary is obtained by combining the horizontal set surface and the upper surface of the new air mesh.

5. The semiconductor three-dimensional deposition process simulation method according to claim 4, characterized in that, The step of combining the horizontal curved surface and the upper surface of the new air mesh to obtain the closed air volume boundary includes: The boundary of the horizontal set surface is divided to obtain a connected and ordered coordinate sequence, which serves as the reflection boundary of the horizontal set surface. In sequence, the horizontal curved surface reflection boundary and the upper surface of the new air grid are combined to obtain the lateral air stitching surface; Using the horizontal curved surface as the bottom surface and the upper surface of the new air grid as the top surface, combined with the lateral air stitching surface, the closed air volume boundary is obtained.

6. The semiconductor three-dimensional deposition process simulation method according to any one of claims 1-3, characterized in that, The construction of closed air volume boundaries for the new air region and closed deposition volume boundaries for the new deposition material region based on the horizontal set surface includes: Within the initial computational domain, all exposed surfaces in contact with air are extracted to obtain the lower surface of the new deposition volume; The horizontal set surface and the lower surface of the new deposition volume are combined to obtain the closed deposition volume boundary.

7. The semiconductor three-dimensional deposition process simulation method according to claim 6, characterized in that, The step of combining the horizontal curved surface and the lower surface of the new deposition volume to obtain the closed deposition volume boundary includes: The boundary of the lower surface of the new deposition volume is divided to obtain a connected and ordered coordinate sequence, which serves as the reflection boundary of the lower surface of the deposition volume. In sequence, the reflection boundary of the lower surface of the deposition volume and the lower surface of the new deposition volume are combined to obtain a lateral volume stitching surface; Using the lower surface of the new deposition volume as the bottom surface and the horizontal curved surface as the top surface, combined with the lateral volume stitching surface, the closed deposition volume boundary is obtained.

8. The semiconductor three-dimensional deposition process simulation method according to any one of claims 1-3, characterized in that, The process of meshing the closed air volume boundary and the closed deposition volume boundary, and then stitching the generated mesh back into the initial computational domain to obtain the three-dimensional deposition result includes: Remove the portion of the air mesh covered by the new deposition region in the initial computational domain, and embed the tetrahedralized new deposition region mesh and the new air region mesh into the corresponding positions in the initial computational domain to obtain the three-dimensional deposition result.

9. A semiconductor three-dimensional deposition process simulation device, characterized in that, include: The extraction module is used to extract the level set surface from the distance-signed function of the initial computational domain using a three-dimensional isosurface extraction algorithm; The construction module is used to construct, based on the horizontal set surface, the closed air volume boundary of the new air region and the closed deposition volume boundary of the new deposition material region, respectively. The generation module is used to mesh the closed air volume boundary and the closed deposition volume boundary, and stitch the generated mesh back into the initial computational domain to obtain the three-dimensional deposition result.

10. An electronic device, characterized in that, Including memory and processor; The memory is used to store computer programs; The processor is configured to implement the semiconductor three-dimensional deposition process simulation method as described in any one of claims 1-7 when executing the computer program.

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