OLED substrate and light-emitting device

Abstract

The OLED substrate provided by the embodiment of the invention comprises a semitransparent black glass substrate, and is realized by doping one or more colored compounds of cobalt oxide, nickel oxide, iron oxide, manganese oxide and chromium oxide in an alkali metal glass substrate. Wherein the total amount of the colored compounds doped in the glass substrate is 0.15%-1%, and the semitransparent black glass substrate with the light transmittance of 20%-50% in the red light band of 610-680 nm is obtained by regulating and controlling the contents of the colored compounds of cobalt oxide, nickel oxide, iron oxide, manganese oxide and chromium oxide in the glass substrate and combining with the control of the thickness of the glass substrate. Besides, the anti-radiation layer and the protective layer are arranged on the light-emitting side or the non-light-emitting side of the semitransparent black glass substrate, so that the anti-ultraviolet capacity of the glass substrate is improved, the reliability of the light-emitting device is further improved, the service life of the light-emitting device is further prolonged, and the light-emitting device has the advantages of high anti-ultraviolet capacity and high light-emitting efficiency. And the light-emitting device is provided with a semitransparent black glass substrate and can meet the requirements on the appearance color and high quality of the vehicle-mounted tail lamp.

Description

Technical Field

[0001] This invention relates to the field of organic light-emitting technology, and more particularly to an OLED substrate and a light-emitting device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) have become the next generation of display and lighting technology due to their advantages such as active light emission, wide color gamut, fast response, wide viewing angle, high contrast, and planar design.

[0003] OLED lighting devices have been gradually applied to commercial and automotive lighting due to their characteristics. However, when OLED lighting devices are currently used in automotive taillights, the use of semi-transparent / transparent housings allows the internal structure of the lamp to be visible. Therefore, the appearance and color of the OLED lighting device need to be integrated with the internal components of the housing. Current OLED lighting devices, due to the light absorption of organic materials and the reflectivity of the cathode metal, exhibit a certain color, which cannot meet the high-quality requirements and color requirements of automotive taillights. Summary of the Invention

[0004] This invention provides an OLED substrate and a light-emitting device, improving the reliability and quality of the light-emitting device.

[0005] According to one aspect of the present invention, an OLED substrate is provided, comprising:

[0006] Glass substrate;

[0007] The glass substrate is a semi-transparent black glass substrate, which is doped with one or more colored compounds. The light transmittance of the glass substrate in the red light band of 610nm-680nm is 20%-50%.

[0008] Optionally, the material of the glass substrate includes alkali metals;

[0009] The thickness of the glass substrate is less than or equal to 0.7 mm;

[0010] The colored compound includes at least one of cobalt oxide, nickel oxide, iron oxide, manganese oxide, and chromium oxide;

[0011] The total amount of the colored compound doped in the glass substrate is 0.15%-1%.

[0012] Optionally, the thickness of the glass substrate is less than or equal to 0.1 mm, the content of cobalt oxide in the non-ferrous compound is 0.015%-0.15%; the content of manganese oxide in the non-ferrous compound is 0.01%-0.1%; the content of nickel oxide in the non-ferrous compound is 0.045%-0.35%; the content of chromium oxide in the non-ferrous compound is 0.015%-0.15%; and the content of iron oxide in the non-ferrous compound is 0.03%-0.25%.

[0013] Optional, also includes:

[0014] An anti-radiation layer is located on one side of the glass substrate;

[0015] A protective layer located on the side of the radiation-resistant layer away from the glass substrate.

[0016] Optionally, the radiation-resistant layer comprises at least one set of alternating high-refractive-index films and low-refractive-index films; the material of the high-refractive-index film includes at least one of titanium dioxide, niobium pentoxide, zirconium oxide, and zinc oxide; the material of the low-refractive-index film includes at least one of silicon dioxide and aluminum oxide.

[0017] Optionally, when the high-refractive-index film and the low-refractive-index film are four sets of alternating stacks, the material of the high-refractive-index film is zinc oxide, the material of the low-refractive-index film is aluminum oxide, and the thickness range of the radiation-resistant layer is 150nm-350nm.

[0018] Optionally, the radiation-resistant layer has a light transmittance of less than 0.1% in the wavelength range below 370 nm;

[0019] The radiation-resistant layer has a light transmittance of less than or equal to 5% in the wavelength range below 450nm.

[0020] Optionally, the material of the protective layer is silicon oxide or silicon nitride; the thickness of the protective layer ranges from 30nm to 200nm.

[0021] A light-emitting device, comprising an OLED substrate as described above, and further comprising:

[0022] An anode, a light-emitting layer, and a cathode are disposed on the side of the protective layer away from the OLED substrate;

[0023] Alternatively, the anode, light-emitting layer, and cathode can be disposed on the side of the glass substrate away from the radiation-resistant layer.

[0024] Optionally, the anode is a transparent or semi-transparent electrode; the anode is made of one or more materials selected from indium tin oxide, zinc oxide-based materials, and aluminum zinc oxide materials;

[0025] The cathode is made of one or more metallic materials selected from aluminum, magnesium, silver, indium, calcium, and gold.

[0026] The OLED substrate provided in this invention includes a semi-transparent black glass substrate, which is achieved by doping an alkali metal glass substrate with one or more colored compounds such as cobalt oxide, nickel oxide, iron oxide, manganese oxide, and chromium oxide. The total amount of the colored compounds doped in the glass substrate is 0.15%-1%. By controlling the content of each colored compound in the glass substrate, combined with the control of the glass substrate thickness, a semi-transparent black glass substrate with a transmittance of 20%-50% in the red light band of 610nm-680nm is obtained. Furthermore, by providing an anti-radiation layer and a protective layer on the light-emitting side or non-light-emitting side of the semi-transparent black glass substrate, the UV resistance of the glass substrate is improved, further enhancing the reliability and lifespan of the light-emitting device. This results in a light-emitting device that possesses both strong UV resistance and a semi-transparent black glass substrate, meeting the requirements for the appearance color and high quality of automotive taillights.

[0027] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of the first type of OLED substrate provided in an embodiment of the present invention.

[0030] Figure 2 This is a schematic diagram of the second type of OLED substrate provided in an embodiment of the present invention.

[0031] Figure 3 This is a schematic diagram of the third type of OLED substrate provided in an embodiment of the present invention.

[0032] Figure 4 This is a schematic diagram of the fourth type of OLED substrate provided in the embodiments of the present invention.

[0033] Figure 5 This is a schematic diagram of the first light-emitting device provided in an embodiment of the present invention.

[0034] Figure 6This is a schematic diagram of a second light-emitting device provided in an embodiment of the present invention. Detailed Implementation

[0035] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0036] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0037] This invention provides an OLED substrate. Figure 1 This is a schematic diagram of an OLED substrate provided in an embodiment of the present invention. (Reference) Figure 1 The OLED substrate includes:

[0038] Glass substrate 10;

[0039] The glass substrate 10 is a semi-transparent black glass substrate, and one or more colored compounds are doped in the glass substrate 10. The transmittance of the glass substrate 10 in the red light band of 610nm-680nm is 20%-50%.

[0040] The glass substrate 10 is a semi-transparent black glass substrate, which is achieved by doping one or more colored compounds in the manufacturing process of the glass substrate 10. The glass substrate 10 is semi-transparent black mainly because when the OLED substrate is used in the taillight, in order to form an integrated effect with the plastic parts inside the taillight, the surface of the internal taillight structure needs to be black as well. Therefore, by doping the glass substrate 10 with colored compounds, the glass substrate 10 itself is made semi-transparent black, thereby achieving the effect of the taillight structure surface being black. This requires ensuring that the light transmittance of the glass substrate 10 in the red light band of 610nm-680nm is 20%-50%.

[0041] Based on the above embodiments, optionally, the material of the glass substrate 10 includes an alkali metal;

[0042] The total amount of colored compounds doped in the glass substrate 10 is 0.15%-1%;

[0043] The colored compound includes at least one of cobalt oxide, nickel oxide, iron oxide, manganese oxide and chromium oxide, and the thickness of the glass substrate 10 is less than or equal to 0.7 mm, preferably less than or equal to 0.1 mm.

[0044] Specifically, the material of the glass substrate 10 includes alkali metals, with main components including silicon oxide (SiO2), sodium oxide, potassium oxide (Na2O+K2O), and calcium oxide (CaO), among other sodium-calcium alkali metals. In the soda-lime glass system of the glass substrate 10, the presence of alkali metal ions significantly affects the form of cobalt, nickel, manganese, iron, and chromium ions in the colored compounds, and also affects the final color effect of the glass substrate 10. Therefore, the total concentration of the colored compounds doped in the glass substrate 10 is 0.15%-1%, which can yield a semi-transparent black OLED substrate that meets the appearance color requirements of automotive taillights.

[0045] Furthermore, the glass substrate 10 is thinned to a required thickness of 0.7 mm or less by using a thicker material. Single-sided or double-sided thinning processes can provide better flatness for the glass substrate 10. Since the light transmittance of visible light wavelengths can be adjusted by regulating the concentration and thickness of the colored compound doped in the glass substrate 10, increasing the concentration of the colored compound enhances the light absorption capacity of the glass substrate 10. Therefore, when the total amount of colored compound in the glass substrate 10 is 0.15%-1%, the requirement for the glass substrate 10 to be semi-transparent black can be met, while ensuring that the light transmittance of the glass substrate 10 in the red light band of 610nm-680nm is 20%-50%. Preferably, the thickness of the glass substrate 10 needs to be reduced to 0.1 mm to ensure its light transmittance, thereby obtaining a semi-transparent black glass substrate with high light output and meeting the color requirements of automotive taillights.

[0046] Based on the above embodiments, optionally, the content of cobalt oxide in the non-ferrous compound is 0.015%-0.15%; the content of manganese oxide in the non-ferrous compound is 0.01%-0.1%; the content of nickel oxide in the non-ferrous compound is 0.045%-0.35%; the content of chromium oxide in the non-ferrous compound is 0.015%-0.15%; and the content of iron oxide in the non-ferrous compound is 0.03%-0.25%.

[0047] Specifically, in a soda-lime glass system, the simultaneous presence of multiple metal oxides in the glass substrate 10 produces complex synergistic effects, thereby affecting the final color of the glass substrate 10 and its light transmittance in the visible light band. Therefore, it is necessary to precisely control the concentration of each colored compound to achieve the desired appearance and optical effects. Among them, cobalt oxide (CoO) and manganese oxide are the basic hue groups in the color tuning of the glass substrate 10. Cobalt ions exist in the glass substrate 10 in a tetrahedral or octahedral structure, exhibiting strong absorption in the orange-red to yellow-green region (500nm-650nm) of the visible spectrum, and can transmit deep blue light. This absorption characteristic makes cobalt ions a key component for adjusting the black hue of the glass, playing an important role in achieving neutral black or bluish-black hues. Divalent manganese ions are key to achieving neutral black in glass substrate 10. Excessive trivalent manganese ions can cause the hue of glass substrate 10 to become purplish. Divalent manganese ions can suppress the formation of trivalent manganese ions through a weak reducing atmosphere. Therefore, when the content of cobalt oxide in the colored compound is 0.015%-0.15% and the content of manganese oxide in the colored compound is 0.01%-0.1%, the basic requirements for color adjustment of glass substrate 10 can be met. In the soda-lime glass system, nickel ions in nickel oxide mainly exist in the form of octahedral coordination. Octahedral coordinated nickel ions exhibit absorption characteristics in the visible light region, especially in the red light and near-infrared regions, and are an important component for achieving dark glass substrates. Therefore, when the content of nickel oxide in the colored compound is controlled in the range of 0.045%-0.35%, it can satisfy the requirement that glass substrate 10 is black and also ensure that the transmittance of glass substrate 10 in the red light band of 610nm-680nm is 20%-50%. In addition, chromium oxide (Cr2O3) is an oxide with extremely strong coloring ability in glass. Its absorption characteristics in the visible light band make it an important component for achieving black glass. Trivalent chromium ions form octahedrons in the soda-lime glass system, which can strongly absorb red and violet light. Due to the strong coloring ability of chromium ions, its dosage needs to be strictly controlled, otherwise the color of the glass substrate 10 will be too dark, affecting the light transmittance. Therefore, in order to meet the requirement that the transmittance of the glass substrate 10 in the red light band of 610nm-680nm is 20%-50%, the chromium oxide content in the colored compound is 0.015%-0.15%. The absorption capacity of divalent iron ions in iron oxide for red light is more than 10 times that of trivalent iron ions. In the soda-lime glass system, a weak reducing atmosphere needs to be maintained to maintain the proportion of divalent iron ions, thereby controlling the color of the glass substrate 10. Therefore, the iron oxide content in the colored compound is 0.03%-0.25%.

[0048] Furthermore, since the simultaneous presence of multiple metal oxides in the soda-lime glass system of the glass substrate 10 will produce complex synergistic effects, it will affect both the coloring depth of the glass substrate 10 and the light transmittance of the glass substrate 10 in the red light band of 610nm-680nm. Therefore, it is necessary to precisely control the content of cobalt oxide in the colored compound to 0.015%-0.15%; the content of manganese oxide in the colored compound to 0.01%-0.1%; the content of nickel oxide in the colored compound to 0.045%-0.35%; the content of chromium oxide in the colored compound to 0.015%-0.15%; and the content of iron oxide in the colored compound to 0.03%-0.25% in order to ensure that the glass substrate 10 can meet the requirements of semi-transparent black while ensuring that the light transmittance in the red light band of 610nm-680nm is 20%-50%.

[0049] Based on the above embodiments, optionally, Figure 2 This is a schematic diagram of the second type of OLED substrate provided in an embodiment of the present invention. Figure 3 This is a schematic diagram of the third type of OLED substrate provided in an embodiment of the present invention, for reference. Figures 2-3 The OLED substrate also includes: an anti-radiation layer 20 located on one side of the glass substrate 10; and a protective layer 30 located on the side of the anti-radiation layer 20 away from the glass substrate 10.

[0050] Specifically, the glass substrate 10 has light-emitting and non-light-emitting sides on opposite sides in its thickness direction, meaning light is emitted from the glass substrate 10, which is a semi-transparent substrate. The radiation-resistant layer 20 is located on one side of the glass substrate 10, meaning the radiation-resistant layer 20 can be located on the non-light-emitting side of the glass substrate 10 (e.g., ...). Figure 2 (as shown), or, the radiation-resistant layer 20 can be located on the light-emitting side of the glass substrate 10 (as shown). Figure 3 As shown, both methods can effectively block ultraviolet light from affecting the glass substrate 10. The anti-radiation layer 20 can be formed by methods such as evaporation, atomic deposition, and magnetron sputtering. When the anti-radiation layer 20 is located on the non-light-emitting side of the glass substrate 10, it can block ultraviolet light from entering the internal light-emitting structure of the OLED substrate. When the anti-radiation layer 20 is located on the light-emitting side of the glass substrate 10, it directly blocks ultraviolet light from passing through the glass substrate 10 and entering its interior, thus improving the reliability and lifespan of the OLED substrate and its internal structure. Considering the simplicity and cost of the manufacturing process, it is preferable that the anti-radiation layer 20 is located on the non-light-emitting side of the glass substrate 10. The protective layer 30 is disposed on the side of the anti-radiation layer 20 away from the glass substrate 10 to protect the anti-radiation layer 20 from damage by subsequent photolithography processes.

[0051] Furthermore, by directly adding various colored compounds during the fabrication process of the glass substrate 10, and by setting an anti-radiation layer 20 and a protective layer 30 on the surface of the glass substrate 10, the OLED substrate can achieve the effect of semi-transparent black and strong anti-ultraviolet capability in one piece. This method reduces the number of process steps and also reduces the manufacturing cost of the OLED substrate.

[0052] Based on the above embodiments, optionally, Figure 4 This is a schematic diagram of the fourth type of OLED substrate provided in the embodiments of the present invention, for reference. Figure 4 The radiation-resistant layer 20 includes at least one set of alternating high-refractive-index film layers 21 and low-refractive-index film layers 22; the material of the high-refractive-index film layer 21 includes at least one of titanium dioxide, niobium pentoxide, zirconium oxide, and zinc oxide; the material of the low-refractive-index film layer 22 includes at least one of silicon dioxide and aluminum oxide.

[0053] Specifically, when the radiation-resistant layer 20 is located on the non-light-emitting side of the glass substrate 10, the radiation-resistant layer 20 includes at least one set of alternately stacked high-refractive-index film layers 21 and low-refractive-index film layers 22 (e.g., Figure 4 As shown in the diagram, when the radiation-resistant layer 20 is located on the light-emitting side of the glass substrate 10, a schematic diagram including alternating stacked high-refractive-index film layers 21 and low-refractive-index film layers 22 is not shown. The material of the high-refractive-index film layer 21 includes at least one of titanium dioxide (TiO2), niobium pentoxide (Nb2O5), zirconium oxide (ZrO2), and zinc oxide (ZnO); the material of the low-refractive-index film layer 22 includes at least one of silicon dioxide (SiO2) and aluminum oxide (Al2O3). By employing multiple sets of alternately stacked high-refractive-index films 21 and low-refractive-index films 22, and utilizing the significant refractive index difference between the high-refractive-index films 21 and low-refractive-index films 22, the interface reflected light of each alternately stacked film layer participates in constructive interference, forming a high reflectivity effect for the ultraviolet band. Furthermore, due to the absorption characteristics of oxides such as titanium dioxide and silicon dioxide in the ultraviolet band, after ultraviolet light passes through multiple sets of alternately stacked high-refractive-index films 21 and low-refractive-index films 22, the OLED substrate can achieve high reflectivity and high light transmittance for ultraviolet light.

[0054] Based on the above embodiments, optionally, when the high refractive index film layer 21 and the low refractive index film layer 22 are four sets of staggered stacks, the material of the high refractive index film layer 21 is zinc oxide, the material of the low refractive index film layer 22 is aluminum oxide, and the thickness range of the radiation-resistant layer 20 is 150nm-350nm, which can be set to 150nm, 180nm, 200nm, 250nm, 280nm, 300nm or 350nm as needed.

[0055] Specifically, when the high-refractive-index film layer 21 and the low-refractive-index film layer 22 are stacked in four alternating groups, the material of the high-refractive-index film layer 21 is preferably zinc oxide, and the material of the low-refractive-index film layer 22 is aluminum oxide. When the thickness of the anti-radiation layer 20 is less than 150 nm, the formed anti-radiation layer 20 is prone to defects such as pinholes and cracks, thereby weakening the anti-ultraviolet resistance of the anti-radiation layer 20. When the thickness of the anti-radiation layer 20 is greater than 350 nm, on the one hand, it will cause the wavelength band of ultraviolet light blocking to shift, thereby affecting the anti-ultraviolet light blocking ability of the anti-radiation layer 20. On the other hand, the excessive thickness of the anti-radiation layer 20 will cause the internal stress of the film layer to accumulate continuously, resulting in microcracks in the film layer, further weakening the anti-ultraviolet resistance of the anti-radiation layer 20 and affecting the anti-ultraviolet effect of the OLED substrate.

[0056] Based on the above embodiments, optionally, the light transmittance of the anti-radiation layer 20 in the band below 370nm is less than 0.1%; and the light transmittance of the anti-radiation layer 20 in the band below 450nm is less than or equal to 5%.

[0057] Specifically, the ultraviolet transmittance of the OLED substrate is related to the number and thickness of the high-refractive-index film layer 21 and the low-refractive-index film layer 22 included in the anti-radiation layer 20. When the anti-radiation layer 20 includes at least one set of alternately stacked high-refractive-index film layers 21 and low-refractive-index film layers 22, the light transmittance of the anti-radiation layer 20 in the wavelength band below 450nm can be less than or equal to 5%. Preferably, when the anti-radiation layer 20 includes at least four sets of alternately stacked high-refractive-index film layers 21 and low-refractive-index film layers 22, and the thickness of the anti-radiation layer 20 is in the range of 150nm-350nm, the light transmittance of the anti-radiation layer 20 in the wavelength band below 370nm can be less than 0.1%.

[0058] Based on the above embodiments, optionally, the material of the protective layer 30 is silicon oxide or silicon nitride; the thickness of the protective layer 30 is in the range of 30nm-200nm, and can be set to 30nm, 50nm, 80nm, 100nm, 150nm, 180nm or 200nm as needed. Preferably, the thickness of the protective layer 30 is 100nm.

[0059] Specifically, after the anti-radiation layer 20 is formed on one side of the glass substrate 10, the OLED substrate needs to be fabricated with subsequent electrode layers through photolithography. Since the etching solution or dry etching gas in the photolithography process can damage the anti-radiation layer 20, a protective layer 30 is required on the side of the anti-radiation layer 20 away from the glass substrate 10 to protect it from damage by subsequent photolithography processes. The protective layer 30 is made of silicon oxide or silicon nitride passivation layer, which ensures that the film quality of the anti-radiation layer 20 is not affected, thereby improving the UV resistance of the OLED substrate. When the thickness of the protective layer 30 is less than 30 nm, the film quality of the formed protective layer 30 cannot be guaranteed, and it cannot provide better protection for the anti-radiation layer 20; when the thickness of the protective layer 30 is greater than 200 nm, it will affect the light transmittance of the OLED substrate. The thickness of the protective layer 30 ranges from 30nm to 200nm, which can ensure that the protective layer 30 has better film quality, thereby ensuring the UV resistance of the OLED substrate, and also ensure the light transmittance of the OLED substrate.

[0060] Based on the above embodiments, optionally, Figure 5 This is a schematic diagram of the first light-emitting device provided in an embodiment of the present invention. Figure 6 This is a schematic diagram of the second light-emitting device provided in an embodiment of the present invention, with reference to... Figures 5-6 A light-emitting device includes the OLED substrate described above, and further includes an anode 40, a light-emitting layer 50, and a cathode 60 disposed on the side of the protective layer 30 away from the glass substrate 10; or, an anode 40, a light-emitting layer 50, and a cathode 60 disposed on the side of the glass substrate 10 away from the radiation-resistant layer 20.

[0061] Specifically, the light-emitting device is a bottom-emitting device that emits light from the glass substrate 10. Since the radiation-resistant layer 20 and the protective layer 30 can be disposed on either the light-emitting side or the non-light-emitting side of the glass substrate 10, when the radiation-resistant layer 20 and the protective layer 30 are disposed on the non-light-emitting side of the glass substrate 10, the anode 40, the light-emitting layer 50, and the cathode 60 of the light-emitting device are located on the side of the protective layer 30 away from the glass substrate 10; when the radiation-resistant layer 20 and the protective layer 30 are disposed on the light-emitting side of the glass substrate 10, the anode 40, the light-emitting layer 50, and the cathode 60 of the light-emitting device are located on the side of the glass substrate 10 away from the radiation-resistant layer 20. By providing the radiation-resistant layer 20 and the protective layer 30 on the light-emitting side of the light-emitting device, the UV resistance of the OLED substrate can be improved, while the high reliability and lifespan of the light-emitting device can be enhanced.

[0062] Based on the above embodiments, optionally, the anode 40 is a transparent or semi-transparent electrode; the anode 40 is made of one or more materials selected from indium tin oxide, zinc oxide-based materials, and aluminum zinc oxide materials; the cathode 60 is made of one or more metallic materials selected from aluminum, magnesium, silver, indium, calcium, and gold.

[0063] Specifically, the light-emitting device is a bottom-emitting device that emits light from the glass substrate 10. The anode 40 is a transparent or semi-transparent electrode. For example, the anode 40 is made of one or more materials with good light transmittance and conductivity, such as indium tin oxide (ITO), zinc oxide-based materials (such as AZO, GZO), and zinc aluminum oxide. Other light-transmitting materials can also be used for the transparent anode, which is not limited here. The cathode 60 is made of one or more metallic materials selected from aluminum, magnesium, silver, indium, calcium, and gold to ensure high conductivity and reflection effect of the cathode 60.

[0064] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0065] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. An OLED substrate, characterized by, Comprising: a glass substrate; the glass substrate is a semi-transparent black glass substrate, the glass substrate is doped with one or more colored compounds, the glass substrate has a light transmittance of 20%-50% in the red light wavelength band of 610nm-680nm.

2. The OLED substrate according to claim 1, wherein: the material of the glass substrate comprises alkali metal; the thickness of the glass substrate is less than or equal to 0.7mm; the colored compound comprises at least one of cobalt oxide, nickel oxide, iron oxide, manganese oxide and chromium oxide; the total amount of the colored compound doped in the glass substrate is 0.15%-1%.

3. The OLED substrate according to claim 2, wherein: the thickness of the glass substrate is less than or equal to 0.1mm; the content of the cobalt oxide in the colored compound is 0.015%-0.15%; the content of the manganese oxide in the colored compound is 0.01%-0.1%; the content of the nickel oxide in the colored compound is 0.045%-0.35%; the content of the chromium oxide in the colored compound is 0.015%-0.15%; the content of the iron oxide in the colored compound is 0.03%-0.25%.

4. The OLED substrate according to claim 1, further comprising: a radiation resistance layer located on one side of the glass substrate; a protective layer located on the side of the radiation resistance layer away from the glass substrate.

5. The OLED substrate according to claim 4, wherein: the radiation resistance layer comprises at least one set of high refractive index film layers and low refractive index film layers stacked alternately; the material of the high refractive index film layer comprises at least one of titanium dioxide, niobium pentoxide, zirconium oxide and zinc oxide; the material of the low refractive index film layer comprises at least one of silicon dioxide and aluminum oxide.

6. The OLED substrate according to claim 5, wherein: when the high refractive index film layers and the low refractive index film layers are stacked alternately in four sets, the material of the high refractive index film layer is zinc oxide, the material of the low refractive index film layer is aluminum oxide, and the thickness of the radiation resistance layer ranges from 150nm to 350nm.

7. The OLED substrate according to claim 6, wherein: the light transmittance of the radiation resistance layer in the wavelength band below 370nm is less than 0.1%; the light transmittance of the radiation resistance layer in the wavelength band below 450nm is less than or equal to 5%.

8. The OLED substrate according to claim 4, wherein: the material of the protective layer is silicon oxide or silicon nitride; the thickness of the protective layer ranges from 30nm to 200nm.

9. A light emitting device, comprising the OLED substrate according to any one of claims 1-8, further comprising: an anode, a light emitting layer and a cathode arranged on the side of the protective layer away from the OLED substrate; or an anode, a light emitting layer and a cathode arranged on the side of the glass substrate away from the radiation resistance layer.

10. The light emitting device according to claim 9, wherein: ​ ​ ​ The anode is a transparent or semi-transparent electrode; the anode is made of one or more of indium tin oxide, zinc oxide-based material, aluminum zinc oxide material; The cathode is made of one or more of aluminum, magnesium, silver, indium, calcium, gold.

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