Wafer photoresist removing method and wafer photoresist removing device
By processing the wafers in stages—high temperature, low temperature, and in a cooling chamber—the problem of wafer fragmentation caused by temperature differences was solved, achieving efficient resist removal and reduced resist residue.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-24
- Publication Date
- 2026-04-14
AI Technical Summary
In existing technologies, when wafers are cooled directly after high-temperature resist removal, the large temperature difference leads to wafer fragmentation, which is particularly prominent in sapphire substrates.
A staged degumming and cooling method is adopted. First, the first degumming is carried out in a high-temperature degumming chamber, then it is transferred to a low-temperature degumming chamber for a second degumming, and then transferred to a cooling chamber for cooling. The temperature is gradually reduced to minimize the stress caused by temperature difference.
By controlling the temperature in stages, the risk of wafer fragmentation is reduced, the efficiency of resist removal is improved, and the amount of resist residue is reduced, thus preventing wafer breakage.
Smart Images
Figure CN121857253A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of light-emitting devices, and in particular to a wafer resist removal method and a wafer resist removal apparatus. Background Technology
[0002] Light-emitting diode (LED) chips offer advantages such as energy efficiency, high brightness, high durability, long lifespan, and light weight, and have been widely used in lighting and display industries. Wafers are the substrate material for manufacturing LED chips, which are the finished products resulting from a series of processes performed on wafers.
[0003] In the wafer fabrication process, photoresist is first applied to the surface of the wafer's film layer. Then, the pattern of the photoresist is transferred to the wafer's film layer through steps such as etching and ion implantation. Finally, the photoresist is removed using a photoresist removal method.
[0004] The photoresist removal method in related technologies is usually high-temperature dry removal, which refers to the technology of removing photoresist by using high temperature and plasma reaction. The removal temperature is generally set at 200℃~300℃. After removing the photoresist in the reaction chamber, the high-temperature wafer is sent to a cooling chamber at 18℃~22℃ for cooling.
[0005] Because the temperature difference between the reaction chamber and the cooling chamber is too large during the cooling process, the wafer may break due to thermal stress. This fragmentation phenomenon is particularly prominent in sapphire substrates. Summary of the Invention
[0006] This disclosure provides a wafer resist removal method and apparatus that can prevent wafer breakage. The technical solution is as follows: On the one hand, a wafer resist removal method is provided, the method comprising: The wafer is placed in a high-temperature desizing chamber for the first desizing. The wafer is transferred from the high-temperature desizing chamber to the low-temperature desizing chamber for a second desizing process, wherein the temperature of the high-temperature desizing chamber is higher than the temperature of the low-temperature desizing chamber. The wafer is transferred from the low-temperature desizing chamber to the cooling chamber for cooling, the temperature of the low-temperature desizing chamber being higher than the temperature of the cooling chamber.
[0007] Optionally, the temperature of the high-temperature degumming chamber is 240~260℃.
[0008] Optionally, placing the wafer into a high-temperature resist removal chamber for the first resist removal includes: Under conditions of gas pressure of 1.0~1.2 Torr and power of 850~950w, oxygen is introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 2450~2550 sccm and the removal time is 115~125 seconds.
[0009] Optionally, the temperature of the low-temperature degumming chamber is 90~110℃.
[0010] Optionally, the wafer is transferred from the high-temperature resist removal chamber to the low-temperature resist removal chamber for a second resist removal, including: Under conditions of gas pressure of 0.7~0.9 Torr and power of 850~950 W, oxygen and nitrogen are introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 850~950 sccm, the nitrogen flow rate is 90~110 sccm, and the photoresist removal time is 55~65 seconds.
[0011] Optionally, the temperature of the cooling chamber is 15~25℃.
[0012] Optionally, transferring the wafer from the low-temperature resist removal chamber to the cooling chamber for cooling includes: The wafer is transferred from the low-temperature desizing chamber to the cooling chamber and cooled for 55-65 seconds.
[0013] On the other hand, a wafer resist stripping apparatus is provided, the wafer resist stripping apparatus comprising: High-temperature desizing chamber, used for the first desizing of wafers; A transfer device for transferring the wafer from the high-temperature desizing chamber to the low-temperature desizing chamber; The low-temperature desizing chamber is used for the wafer to undergo a second desizing process, and the temperature of the high-temperature desizing chamber is higher than the temperature of the low-temperature desizing chamber. The transfer device is also used to transfer the wafer from the low-temperature desizing chamber to the cooling chamber; The cooling chamber is used to cool the wafer, and the temperature of the low-temperature resist removal chamber is higher than the temperature of the cooling chamber.
[0014] Optionally, the temperature of the high-temperature degumming chamber is 240~260℃.
[0015] Optionally, the temperature of the low-temperature degumming chamber is 90~110℃.
[0016] The beneficial effects of the technical solutions provided in this disclosure are: In related technologies, after removing the adhesive from the wafer at high temperature, it is directly cooled. However, due to the large temperature difference, wafer fragmentation can occur.
[0017] In this embodiment, the wafer is placed in a high-temperature desizing chamber for the first desizing. The high temperature in the high-temperature desizing chamber improves the desizing efficiency. Then, the wafer is transferred from the high-temperature desizing chamber to a low-temperature desizing chamber for the second desizing. The temperature in the high-temperature desizing chamber is higher than that in the low-temperature desizing chamber, which serves as a cooling transition. Simultaneously, performing the second desizing at a lower temperature reduces residual adhesive on the wafer. Finally, the wafer is transferred from the low-temperature desizing chamber to a cooling chamber for cooling. The temperature in the low-temperature desizing chamber is higher than that in the cooling chamber. During this process, the wafer's temperature gradually decreases from the high-temperature desizing chamber to the low-temperature desizing chamber and then to the cooling chamber, with a smaller temperature drop, which reduces wafer stress and thus reduces the risk of fragmentation. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 This is a flowchart of a wafer resist removal method provided in an embodiment of this disclosure; Figure 2 This is a flowchart of another wafer resist removal method provided in this embodiment of the disclosure; Figure 3 This is a schematic diagram of a wafer resist removal apparatus provided in an embodiment of this disclosure.
[0020] The attached figures are labeled as follows: 100: High-temperature glue removal cavity; 200: Transfer equipment; 300: Low-temperature glue removal cavity; 400: Cooling chamber. Detailed Implementation
[0021] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0022] Figure 1 This is a flowchart of a wafer resist removal method provided in an embodiment of this disclosure. See also... Figure 1 The method includes the following steps: S11. Place the wafer into the high-temperature desizing chamber for the first desizing.
[0023] The wafer can be used to fabricate light-emitting diode chips or other semiconductor devices.
[0024] For example, the wafer can be a wafer for a sapphire substrate GaN high electron mobility transistor (HEMT) device.
[0025] For example, the wafer can be a wafer of a device with a large difference in the coefficient of thermal expansion of the film layers.
[0026] S12. The wafer is transferred from the high-temperature desizing chamber to the low-temperature desizing chamber for a second desizing, wherein the temperature of the high-temperature desizing chamber is greater than the temperature of the low-temperature desizing chamber.
[0027] S13. The wafer is transferred from the low-temperature desizing chamber to the cooling chamber for cooling, wherein the temperature of the low-temperature desizing chamber is greater than the temperature of the cooling chamber.
[0028] In related technologies, after removing the adhesive from the wafer at high temperature, it is directly cooled. However, due to the large temperature difference, wafer fragmentation can occur.
[0029] In this embodiment, the wafer is placed in a high-temperature desizing chamber for the first desizing. The high temperature in the high-temperature desizing chamber improves the desizing efficiency. Then, the wafer is transferred from the high-temperature desizing chamber to a low-temperature desizing chamber for the second desizing. The temperature in the high-temperature desizing chamber is higher than that in the low-temperature desizing chamber, which serves as a cooling transition. Simultaneously, performing the second desizing at a lower temperature reduces residual adhesive on the wafer. Finally, the wafer is transferred from the low-temperature desizing chamber to a cooling chamber for cooling. The temperature in the low-temperature desizing chamber is higher than that in the cooling chamber. During this process, the wafer's temperature gradually decreases from the high-temperature desizing chamber to the low-temperature desizing chamber and then to the cooling chamber, with a smaller temperature drop, which reduces wafer stress and thus reduces the risk of fragmentation.
[0030] Figure 2 This is a flowchart of another wafer resist removal method provided in an embodiment of this disclosure. See also... Figure 2 The method includes the following steps: S21. Remove the wafer from the wafer cassette in the loading and unloading chamber.
[0031] The load / unload chamber is a key transitional component in semiconductor equipment that connects the atmospheric environment with the vacuum process chamber, and is responsible for safely and efficiently transferring wafers between atmospheric and vacuum conditions.
[0032] For example, this step may include: The wafers are removed from the wafer cassette in the loading and unloading chamber using a transfer device.
[0033] The wafer can be used to fabricate light-emitting diode chips or other semiconductor devices.
[0034] The transfer device can be a robotic arm.
[0035] S22. Place the wafer into the high-temperature desizing chamber for the first desizing.
[0036] Among them, photoresist removal refers to removing excess photoresist from the wafer.
[0037] In this embodiment of the disclosure, the temperature of the high-temperature degumming chamber can be 240~260°C.
[0038] In this implementation, the temperature of the high-temperature desizing chamber is 240~260℃. The temperature of the high-temperature desizing chamber will not be too high, as this would increase the local thermal expansion difference of the wafer and cause the wafer to crack. The temperature of the high-temperature desizing chamber will not be too low either, as this would result in low desizing efficiency and incomplete desizing.
[0039] For example, the temperature of the high-temperature degumming chamber is 250°C.
[0040] In this implementation, the temperature of the high-temperature resist removal chamber is 250°C, which can improve the resist removal efficiency of the wafer.
[0041] In this embodiment of the disclosure, step S22 may include: The first step involves using a transfer device to place the wafer into a high-temperature de-resin chamber; The second step involves removing excess photoresist from the wafer using a photoresist removal process in a high-temperature photoresist removal chamber.
[0042] In this embodiment of the disclosure, the photoresist removal process can be thermal oxidation removal, that is, oxygen is introduced to react with the organic components (hydrocarbons) in the photoresist to achieve the purpose of decomposition and etching, thereby realizing the removal of photoresist.
[0043] In one example of this disclosure, the process of removing excess photoresist from a wafer using a photoresist stripping process may include: Under conditions of gas pressure of 1.0~1.2 Torr and power of 850~950w, oxygen is introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 2450~2550 sccm and the removal time is 115~125 seconds.
[0044] In this implementation, under the conditions of air pressure of 1.0~1.2 Torr, power of 850~950w, and oxygen flow rate of 2450~2550sccm, the degumming time is 115~125 seconds, which can make the degumming rate high and stable.
[0045] For example, the air pressure is 1.1 Torr, the power is 900 W, the oxygen flow rate is 2500 sccm, and the degumming time is 120 seconds.
[0046] In other embodiments, the adhesive removal process in step S22 can also be solvent removal, plasma removal, laser removal, etc.
[0047] S23. Transfer the wafer from the high-temperature desizing chamber to the low-temperature desizing chamber for a second desizing.
[0048] In this embodiment of the disclosure, the temperature of the low-temperature degumming chamber can be 90~110°C.
[0049] In this implementation, the temperature of the low-temperature desizing chamber is 90~110℃. The temperature of the low-temperature desizing chamber will not be too high, as this would cause an excessive temperature difference between the low-temperature desizing chamber and the cooling temperature. In subsequent cooling steps, the wafer is prone to cracking due to the temperature difference. The temperature of the low-temperature desizing chamber will also not be too low, as this would cause an excessive temperature difference between the low-temperature desizing chamber and the high-temperature desizing chamber. The wafer is also prone to cracking due to the temperature difference.
[0050] For example, the temperature of the low-temperature degumming chamber is 100°C.
[0051] In this implementation, the temperature of the low-temperature desizing chamber is 100°C, which can serve as a cooling transition. At the same time, performing secondary desizing at low temperature can reduce the amount of adhesive residue on the wafer.
[0052] In this embodiment of the disclosure, step S23 may include: The first step is to use a transfer device to place the wafer into a low-temperature de-resin chamber; The second step involves removing excess photoresist from the wafer using a low-temperature photoresist removal process in a low-temperature photoresist removal chamber.
[0053] In this embodiment, the photoresist removal process can be a mild oxidation-assisted process, that is, oxygen is introduced to react with the organic components (hydrocarbons) in the photoresist to achieve the purpose of decomposition and etching, thereby achieving photoresist removal. Simultaneously with the introduction of oxygen, nitrogen is introduced to dilute the oxygen concentration, reduce the reaction rate, and avoid localized overheating or excessive oxidation.
[0054] In one example of this disclosure, the process of removing excess photoresist from a wafer using a photoresist stripping process may include: Under conditions of gas pressure of 0.7~0.9 Torr and power of 850~950 W, oxygen and nitrogen are introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 850~950 sccm, the nitrogen flow rate is 90~110 sccm, and the photoresist removal time is 55~65 seconds.
[0055] In this implementation, under the conditions of a gas pressure of 0.7~0.9 Torr, a power of 850~950 W, an oxygen flow rate of 850~950 sccm, and a nitrogen flow rate of 90~110 sccm, the resist removal time is 55~65 seconds, which can further remove residual resist and make the wafer resist removal more comprehensive.
[0056] For example, the pressure is 0.8 Torr, the power is 900 W, the oxygen flow rate is 900 sccm, the nitrogen flow rate is 100 sccm, and the glue removal time is 60 seconds.
[0057] In other embodiments, the adhesive removal process in step S23 can also be solvent removal, plasma removal, laser removal, etc.
[0058] S24. Transfer the wafer from the low-temperature stripping chamber to the cooling chamber for cooling.
[0059] In this embodiment of the disclosure, the temperature of the cooling chamber can be 15~25°C.
[0060] In this implementation, the temperature of the cooling chamber is 15~25℃. The temperature of the cooling chamber will not be too high, as this would result in an excessive temperature difference between the cooling chamber and the cooling temperature, failing to meet the cooling requirements. Conversely, the temperature of the cooling chamber will not be too low, as this would result in an excessive temperature difference between the cooling chamber and the low-temperature desizing chamber, making the wafer prone to cracking due to the temperature difference.
[0061] For example, the temperature of the cooling chamber is 20°C.
[0062] That is, the wafer is cooled from 100°C to about 20°C (room temperature) in the cooling chamber.
[0063] In this implementation, the temperature of the cooling chamber is 20°C, which can play a role in cooling overload. The temperature difference between the cooling chamber and the low-temperature desizing chamber is small, making the wafer less prone to breakage.
[0064] In this embodiment of the disclosure, step S24 may include: The cooldown time can be 55 to 65 seconds.
[0065] In this implementation, the cooling time can be 55 to 65 seconds, which allows the wafer to be completely cooled.
[0066] For example, the cooldown time can be 60 seconds.
[0067] S25. Remove the wafer from the cooling chamber and place it into the wafer cassette in the loading and unloading chamber.
[0068] In this embodiment of the disclosure, the wafer is placed back into the wafer cassette in the loading and unloading chamber using a transfer device.
[0069] Figure 3 This is a schematic diagram of a wafer resist stripping apparatus provided in an embodiment of this disclosure. See also... Figure 3 The adhesive removal device includes: a high-temperature adhesive removal chamber 100, a transfer device 200, a low-temperature adhesive removal chamber 300, and a cooling chamber 400.
[0070] The high-temperature desizing chamber 100 is used for the first desizing of wafers.
[0071] Transfer device 200 is used to transfer wafers from high-temperature desizing chamber 100 to low-temperature desizing chamber 200.
[0072] The low-temperature desizing chamber 300 is used for the second desizing of the wafer, and the temperature of the high-temperature desizing chamber 100 is higher than that of the low-temperature desizing chamber 300.
[0073] The transfer device 200 is also used to transfer wafers from the low-temperature desizing chamber 300 to the cooling chamber 400.
[0074] Cooling chamber 400 is used to cool the wafer, and the temperature of low-temperature desizing chamber 300 is higher than that of cooling chamber 400.
[0075] In related technologies, after removing the adhesive from the wafer at high temperature, it is directly cooled. However, due to the large temperature difference, wafer fragmentation can occur.
[0076] In this embodiment, the wafer is placed in a high-temperature desizing chamber for the first desizing. The high temperature in the high-temperature desizing chamber improves the desizing efficiency. Then, the wafer is transferred from the high-temperature desizing chamber to a low-temperature desizing chamber for the second desizing. The temperature in the high-temperature desizing chamber is higher than that in the low-temperature desizing chamber, which serves as a cooling transition. Simultaneously, performing the second desizing at a lower temperature reduces residual adhesive on the wafer. Finally, the wafer is transferred from the low-temperature desizing chamber to a cooling chamber for cooling. The temperature in the low-temperature desizing chamber is higher than that in the cooling chamber. During this process, the wafer's temperature gradually decreases from the high-temperature desizing chamber to the low-temperature desizing chamber and then to the cooling chamber, with a smaller temperature drop, which reduces wafer stress and thus reduces the risk of fragmentation.
[0077] In this embodiment of the disclosure, the temperature of the high-temperature degumming chamber 100 can be 240~260°C.
[0078] In this implementation, the temperature of the high-temperature desizing chamber is 240~260℃. The temperature of the high-temperature desizing chamber will not be too high, as this would increase the local thermal expansion difference of the wafer and cause the wafer to crack. The temperature of the high-temperature desizing chamber will not be too low either, as this would result in low desizing efficiency and incomplete desizing.
[0079] For example, the temperature of the high-temperature degumming chamber 100 is 250°C.
[0080] In this implementation, the temperature of the high-temperature resist removal chamber is 250°C, which can improve the resist removal efficiency of the wafer.
[0081] In this embodiment, the temperature of the low-temperature degumming chamber 300 can be 90~110°C.
[0082] In this implementation, the temperature of the low-temperature desizing chamber is 90~110℃. The temperature of the low-temperature desizing chamber will not be too high, as this would cause an excessive temperature difference between the low-temperature desizing chamber and the cooling temperature. In subsequent cooling steps, the wafer is prone to cracking due to the temperature difference. The temperature of the low-temperature desizing chamber will also not be too low, as this would cause an excessive temperature difference between the low-temperature desizing chamber and the high-temperature desizing chamber. The wafer is also prone to cracking due to the temperature difference.
[0083] For example, the temperature of the low-temperature degumming chamber 300 is 100°C.
[0084] In this implementation, the temperature of the low-temperature desizing chamber is 100°C, which can serve as a cooling transition. At the same time, performing secondary desizing at low temperature can reduce the amount of adhesive residue on the wafer.
[0085] In this embodiment, the temperature of the cooling chamber 400 can be 15~25°C.
[0086] In this implementation, the temperature of the cooling chamber is 15~25℃. The temperature of the cooling chamber will not be too high, as this would result in an excessive temperature difference between the cooling chamber and the cooling temperature, failing to meet the cooling requirements. Conversely, the temperature of the cooling chamber will not be too low, as this would result in an excessive temperature difference between the cooling chamber and the low-temperature desizing chamber, making the wafer prone to cracking due to the temperature difference.
[0087] For example, the temperature of the cooling chamber 400 is 20°C.
[0088] In this implementation, the temperature of the cooling chamber is 20°C, which can play a role in cooling overload. The temperature difference between the cooling chamber and the low-temperature desizing chamber is small, making the wafer less prone to breakage.
[0089] The wafer can be used to fabricate light-emitting diode chips or other semiconductor devices.
[0090] For example, the wafer can be a wafer for a sapphire substrate GaN HEMT device.
[0091] For example, the wafer can be a wafer of a device with a large difference in the coefficient of thermal expansion of the film layers.
[0092] The transfer device 200 can be a robotic arm.
[0093] In this embodiment of the disclosure, the high-temperature adhesive removal chamber 100 is used for: Under conditions of gas pressure of 1.0~1.2 Torr and power of 850~950w, oxygen is introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 2450~2550 sccm and the removal time is 115~125 seconds.
[0094] In this implementation, under the conditions of air pressure of 1.0~1.2 Torr, power of 850~950w, and oxygen flow rate of 2450~2550sccm, the degumming time is 115~125 seconds, which can make the degumming rate high and stable.
[0095] For example, the air pressure is 1.1 Torr, the power is 900 W, the oxygen flow rate is 2500 sccm, and the degumming time is 120 seconds.
[0096] In this embodiment of the disclosure, the cooling chamber 400 is used for: Under conditions of gas pressure of 0.7~0.9 Torr and power of 850~950 W, oxygen and nitrogen are introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 850~950 sccm, the nitrogen flow rate is 90~110 sccm, and the photoresist removal time is 55~65 seconds.
[0097] In this implementation, under the conditions of a gas pressure of 0.7~0.9 Torr, a power of 850~950 W, an oxygen flow rate of 850~950 sccm, and a nitrogen flow rate of 90~110 sccm, the resist removal time is 55~65 seconds, which can further remove residual resist and make the wafer resist removal more comprehensive.
[0098] For example, the pressure is 0.8 Torr, the power is 900 W, the oxygen flow rate is 900 sccm, the nitrogen flow rate is 100 sccm, and the glue removal time is 60 seconds.
[0099] In this embodiment of the disclosure, the cooling chamber 400 is used for: The wafer is cooled for 55-65 seconds.
[0100] In this implementation, the cooling time can be 55 to 65 seconds, which allows the wafer to be completely cooled.
[0101] For example, the cooldown time can be 60 seconds.
[0102] Optionally, the transfer device 200 is also used to remove the wafer from the wafer cassette in the loading and unloading chamber before the first desizing.
[0103] Among them, the loading and unloading chamber is a key transition component in semiconductor equipment that connects the atmospheric environment and the vacuum process chamber, and is responsible for safely and efficiently transferring wafers between atmospheric and vacuum conditions.
[0104] Optionally, the transfer device 200 is also used to remove the wafer from the cooling chamber and place it into a wafer cassette in the loading and unloading chamber after the wafer has been cooled.
[0105] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the element or object preceding “comprising” or “including” encompasses the element or object listed following “comprising” or “including” and its equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.
[0106] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A method for removing resist from a wafer, characterized in that, The method includes: The wafer is placed in a high-temperature desizing chamber for the first desizing. The wafer is transferred from the high-temperature desizing chamber to the low-temperature desizing chamber for a second desizing process, wherein the temperature of the high-temperature desizing chamber is higher than the temperature of the low-temperature desizing chamber. The wafer is transferred from the low-temperature desizing chamber to the cooling chamber for cooling, the temperature of the low-temperature desizing chamber being higher than the temperature of the cooling chamber.
2. The wafer resist removal method according to claim 1, characterized in that, The temperature of the high-temperature degumming chamber is 240~260℃.
3. The wafer resist removal method according to claim 1 or 2, characterized in that, The step of placing the wafer into a high-temperature resist removal chamber for the first resist removal includes: Under conditions of gas pressure of 1.0~1.2 Torr and power of 850~950w, oxygen is introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 2450~2550 sccm and the removal time is 115~125 seconds.
4. The wafer resist removal method according to claim 1 or 2, characterized in that, The temperature of the low-temperature degumming chamber is 90~110℃.
5. The wafer resist removal method according to claim 4, characterized in that, The wafer is transferred from the high-temperature resist removal chamber to the low-temperature resist removal chamber for a second resist removal process, including: Under conditions of gas pressure of 0.7~0.9 Torr and power of 850~950 W, oxygen and nitrogen are introduced to etch and remove the photoresist on the wafer. The oxygen flow rate is 850~950 sccm, the nitrogen flow rate is 90~110 sccm, and the photoresist removal time is 55~65 seconds.
6. The wafer resist removal method according to claim 1 or 2, characterized in that, The temperature of the cooling chamber is 15~25℃.
7. The wafer resist removal method according to claim 6, characterized in that, Transferring the wafer from the low-temperature resist removal chamber to the cooling chamber for cooling includes: The wafer is transferred from the low-temperature desizing chamber to the cooling chamber and cooled for 55-65 seconds.
8. A wafer resist removal device, characterized in that, The device includes: High-temperature desizing chamber, used for the first desizing of wafers; A transfer device for transferring the wafer from the high-temperature desizing chamber to the low-temperature desizing chamber; The low-temperature desizing chamber is used for the wafer to undergo a second desizing process, and the temperature of the high-temperature desizing chamber is higher than the temperature of the low-temperature desizing chamber. The transfer device is also used to transfer the wafer from the low-temperature desizing chamber to the cooling chamber; The cooling chamber is used to cool the wafer, and the temperature of the low-temperature desizing chamber is higher than the temperature of the cooling chamber.
9. The wafer resist removal apparatus according to claim 8, characterized in that, The temperature of the high-temperature degumming chamber is 240~260℃.
10. The wafer resist removal apparatus according to claim 8, characterized in that, The temperature of the low-temperature degumming chamber is 90~110℃.