Power control method and device, electronic equipment and readable storage medium

Abstract

The invention discloses a power control method, a power control device, electronic equipment and a storage medium, and belongs to the field of Czochralski single crystals. The actual growth rate of a crystal, the material mass of a melt in a crucible and the component mass of a thermal field component are obtained in the single crystal straight pulling process. According to the actual growth rate, the material mass and the assembly mass, determining a heat difference value between actual thermal field heat corresponding to the actual growth rate and target thermal field heat corresponding to the target growth rate; and finally, according to the heat difference value, controlling the power in the single crystal czochralski process. According to the method, through accurate heat difference value calculation and power control based on the heat difference value calculation, the phenomenon of insufficient adjustment or overshoot in traditional control and even the phenomenon of out-of-control caused under the extreme condition are avoided, steady-state deviation is eliminated, and therefore it is ensured that the long-term stability of the crystal pulling process and the control precision are remarkably improved.

Description

Technical Field

[0001] This application belongs to the field of Czochralski single crystal, specifically relating to a power control method, a power control device, an electronic device, and a readable storage medium. Background Technology

[0002] The Czochralski (CZ) method for producing single-crystal silicon is a technology that uses precise temperature and pulling speed to manufacture high-quality single-crystal silicon. Its core processes include temperature control, crystal pulling, shoulder formation, shoulder rotation, diameter equalization, and finishing. Among these processes, precise temperature control is crucial for ensuring crystal quality. However, with the continuous increase in the size of the thermal field and the increasing complexity of its structure, traditional temperature control methods have gradually revealed significant limitations.

[0003] Currently, most Czochralski single crystal control systems employ proportional control and lookup table methods for temperature regulation. Traditional control methods typically use the deviation between the average pulling speed and the target pulling speed as input parameters, calculate the power adjustment amount through a simple linear model, and combine it with the initial power to form a closed-loop control.

[0004] However, this control method has significant shortcomings when dealing with complex thermal fields. The simple linear model of proportional control is difficult to accurately reflect the dynamic characteristics of complex thermal fields, and is prone to under-adjustment or over-adjustment, and may even lead to loss of control in extreme cases, resulting in inaccurate control. Summary of the Invention

[0005] The purpose of this application is to provide a power control method, a power control device, an electronic device, and a readable storage medium, which can solve the problem of inaccurate control in Czochralski single crystal control.

[0006] To solve the above-mentioned technical problems, this application is implemented as follows: In a first aspect, embodiments of this application provide a power control method, the method comprising: In the process of Czochralski single crystal growth, the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly are obtained. Based on the actual growth rate, the material mass, and the component mass, determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate. The power of the Czochralski single crystal growth process is controlled based on the heat difference.

[0007] Optionally, determining the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate, based on the actual growth rate, the material mass, and the component mass, includes: The heat difference is calculated based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

[0008] Optionally, the step of calculating the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration includes: The instantaneous heat demand rate is calculated based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization, and the thermal conductivity of the crystal. The specific heat capacity of the thermal field structure is the sum of the specific heat capacity of the melt and the specific heat capacity of the thermal field structure; the specific heat capacity of the solution is the product of the mass of the material and the specific heat of the melt; and the specific heat capacity of the thermal field component is the product of the mass of the component and the specific heat of the thermal field component. The deviation value is the product of the rate deviation between the actual growth rate and the target growth rate, the density parameter, and the latent heat of crystallization parameter. The instantaneous heat demand rate is integrated over the target duration to obtain the heat difference.

[0009] Optionally, controlling the power of the Czochralski single crystal growth process based on the heat difference includes: The direction of power adjustment is determined based on the sign of the heat difference or the relationship between the actual growth rate and the target growth rate. The power of the Czochralski single crystal process is adjusted using a pulsed power method based on the absolute value of the heat difference and the power adjustment direction; and / or, the power of the Czochralski single crystal process is adjusted using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

[0010] Optionally, adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction includes: The duration of the first pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, and the duration of the first pulse.

[0011] Optionally, adjusting the power of the Czochralski single crystal process based on the absolute value of the heat difference and the power adjustment direction using a persistent power correction amount includes: Based on the heat difference and the preset duration, a first power correction amount is determined; The power of the Czochralski single crystal process is controlled according to the power adjustment direction and the first power correction amount.

[0012] Optionally, adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction; and adjusting the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction, includes: The duration of the second pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The second power correction amount is determined based on the product of the heat difference and the preset ratio, as well as the preset duration. The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, the second pulse duration, and the second power correction amount.

[0013] Secondly, according to embodiments of this application, a power control device is provided, the device comprising: The information acquisition module is used to acquire the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly during the Czochralski single crystal growth process. The difference determination module is used to determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate, based on the actual growth rate, the material mass, and the component mass. The power control module is used to control the power of the Czochralski single crystal growth process based on the heat difference.

[0014] Optionally, the difference determination module includes: The difference determination submodule is used to calculate the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

[0015] Optionally, the difference determination submodule includes: The instantaneous heat demand rate calculation unit is used to calculate the instantaneous heat demand rate based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization term, and the thermal conductivity coefficient of the crystal; wherein, the specific heat capacity of the thermal field structure is the sum of the specific heat capacity of the melt and the specific heat capacity of the thermal field structure, the specific heat capacity of the solution is the product of the mass of the material and the specific heat of the melt, the specific heat capacity of the thermal field component is the product of the mass of the component and the specific heat of the thermal field component, and the deviation value is the product of the rate deviation between the actual growth rate and the target growth rate, the density parameter, and the latent heat of crystallization parameter; The heat difference calculation unit is used to perform an integral calculation on the instantaneous heat demand rate over the target duration to obtain the heat difference.

[0016] Optionally, the power control module includes: The direction determination submodule is used to determine the power adjustment direction based on the sign of the heat difference or the magnitude relationship between the actual growth rate and the target growth rate. The power adjustment submodule is used to adjust the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction; and / or, to adjust the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

[0017] Optionally, the power adjustment submodule includes: The first pulse duration determination unit is used to determine the first pulse duration based on the absolute value of the heat difference and the preset pulse power waveform. A pulse power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction, the preset pulse power waveform and the first pulse duration.

[0018] Optionally, the power adjustment submodule includes: The first correction amount determination unit is used to determine the first power correction amount based on the heat difference and the preset duration; A long-term power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction and the first power correction amount.

[0019] Optionally, the power adjustment submodule includes: The second pulse duration determination unit is used to determine the second pulse duration based on the absolute value of the heat difference and the preset pulse power waveform. The second correction amount determination unit is used to determine the second power correction amount based on the product of the heat difference and the preset ratio, and the preset duration. A power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction, the preset pulse power waveform and the second pulse duration, and the second power correction amount.

[0020] Thirdly, according to embodiments of this application, an electronic device is provided, which includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the method described in the first aspect.

[0021] Fourthly, in embodiments of this application, a readable storage medium is provided, on which a program or instructions are stored, which, when executed by a processor, implement the steps of the method described in the first aspect.

[0022] According to the embodiments of this application, during the Czochralski single crystal pulling process, the actual crystal growth rate, the mass of the molten material in the crucible, and the mass of the thermal field components are obtained. Then, based on the actual growth rate, the mass of the material, and the mass of the components, the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate is determined. Finally, the power of the Czochralski single crystal pulling process is controlled based on the heat difference. This application, through precise calculation of the heat difference and power control based on it, avoids the phenomena of under-adjustment or over-adjustment that occur in traditional control, and even the phenomenon of runaway in extreme cases. Steady-state deviation is eliminated, thereby ensuring the long-term stability of the crystal pulling process and a significant improvement in control accuracy. Attached Figure Description

[0023] Figure 1 This is a flowchart illustrating the steps of a power control method provided in an embodiment of this application; Figure 2 This is a flowchart illustrating the steps of a power control method provided in an embodiment of this application; Figure 3 This is a schematic diagram of several waveforms that can be achieved by pulse power control; Figure 4 This is a schematic diagram of the actual average growth rate and the target growth rate during a certain equal diameter process; Figure 5 It is a real-time curve graph of the heat difference calculation; Figure 6 This is a schematic diagram of power rectangular wave adjustment and speed deviation; Figure 7 This is a structural block diagram of another embodiment of the power control device provided in this invention; Figure 8 This is a structural block diagram of an electronic device for power control according to an exemplary embodiment. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0025] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0026] The power control method provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0027] In the Czochralski single crystal growth process, the core objective of power control is to maintain the consistency between the actual growth rate and the target growth rate. To achieve this objective, this application proposes a power control method based on thermal difference. This power control method can be applied to steps such as crystal pulling, shoulder formation, shoulder turning, constant diameter growth, and finishing.

[0028] Reference Figure 1 The diagram illustrates a flowchart of a power control method according to an embodiment of this application, which may specifically include the following steps: Step 101: During the Czochralski single crystal growth process, obtain the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly.

[0029] In the embodiments of this application, the actual growth rate of the crystal ε is the linear velocity at which the solid-liquid interface (growth interface) of a crystal advances forward during the crystal pulling process; that is, the increase in the length of the crystal rod per unit time. Units: millimeters per minute (mm / min) or meters per second (m / s).

[0030] In this embodiment of the application, the mass of the molten material in the crucible This refers to the mass of the molten liquid (such as molten silicon), a parameter that gradually decreases as the crystal growth process progresses. For example, if the initial mass of the molten liquid in the crucible is 100 kg, it decreases to 90 kg as the crystal grows.

[0031] In this embodiment, the thermal field component refers to a component that provides support and heat conduction within the thermal field. The thermal field component can be made of graphite or carbon-carbon materials; specifically, it can include any suitable component. This embodiment of the invention does not impose any limitations on this. The component mass of the thermal field component in the thermal field... .

[0032] The mass of the molten metal in the crucible continuously decreases during the growth process and needs to be estimated or measured in real time using process data or sensors. The mass of the thermal field components (such as graphite parts) is constant.

[0033] In this embodiment of the invention, the actual crystal growth rate can be characterized by the average pulling speed over a period of time, for example, by the average pulling speed over approximately 20 minutes, reflecting the current actual crystal growth rate. The mass of the molten material in the crucible is estimated or measured in real time using sensors or process data.

[0034] For example, the actual growth rate of a crystal can be measured by a pulling speed sensor, and the mass of the molten material can be estimated by a weight sensor or process data.

[0035] Step 102: Based on the actual growth rate, the material mass, and the component mass, determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate.

[0036] In this embodiment of the application, the target growth rate This refers to the ideal growth rate set in the process, used to guide the crystal growth process. The unit is also millimeters per minute (mm / min). For example, the process requires the crystal growth rate to be 1.0 mm / min.

[0037] In the embodiments of this application, in order to maintain stable growth, the heat transferred from the melt plus the latent heat generated by solidification is equal to the heat conducted away through the crystal. Based on this physical principle, by measuring or calculating these parameters, the thermal field difference required to maintain the target growth rate is calculated in reverse, thereby achieving a leap from fuzzy temperature control to precise heat control.

[0038] In the embodiments of this application, the actual thermal field heat This refers to the amount of heat stored within the thermal field at the current actual growth rate. For example, the actual thermal field heat is 1000 kJ. The target thermal field heat... This refers to the amount of heat required within the thermal field at the target growth rate. For example, the target thermal field heat is 1100 kJ.

[0039] In the embodiments of this application, the heat difference This refers to the difference between the actual heat field and the target heat field. For example, if the actual heat field is 1000 kJ and the target heat field is 1100 kJ, then the heat difference is 1000 kJ. 100kJ.

[0040] In this embodiment, unquantifiable temperature control is transformed into quantifiable heat control through physical modeling. This physical model uses the current average pulling speed to characterize the actual growth rate, and calculates the temperature gradient for crystallization based on the actual growth rate. The actual thermal field heat corresponding to the actual growth rate is then determined based on the temperature gradient. Similarly, the target thermal field heat corresponding to the target growth rate is calculated based on the target pulling speed, ultimately yielding the heat difference between the actual and target thermal fields. The actual calculation process can be divided into one or more steps, as long as it conforms to this physical model.

[0041] For example, it can be executed cyclically according to a control cycle. Within each control cycle, by inputting measurable process parameters (i.e., actual growth rate and material mass) and a fixed component mass, a clear heat difference is output, providing a basis for subsequent power control. Except for the actual growth rate and material mass, which are variables, other parameters are fixed parameters.

[0042] Step 103: Control the power of the Czochralski single crystal growth process based on the heat difference.

[0043] In this embodiment, the heat within the thermal field is increased or released by adjusting the power, causing the actual growth rate to gradually approach the target growth rate. The direction and magnitude of the power adjustment are determined by the heat difference. Alternatively, the direction of the power adjustment can also be determined by the relationship between the actual growth rate and the target growth rate.

[0044] For example, when the heat difference is negative or the actual growth rate is greater than the target growth rate, it indicates that the actual heat is insufficient and the heat needs to be compensated by increasing the power; if the heat difference is positive or the actual growth rate is less than the target growth rate, it indicates that the actual heat is excessive and the excess heat needs to be released by decreasing the power.

[0045] In the embodiments of this application, the specific implementation of controlling the power of the Czochralski single crystal growth process based on the heat difference can include various methods, and this application embodiment does not limit this. For example, the heating power can be adjusted using pulse power control, permanent power control, or a composite control strategy combining both, based on the sign and absolute value of the heat difference. As another example, the heating power can be adjusted using pulse power control, permanent power control, or a composite control strategy combining both, based on the relationship between the actual growth rate and the target growth rate, and the absolute value of the heat difference.

[0046] For example, the heat difference is 100kJ indicates insufficient actual heat. Assuming the pulse power amplitude is set to ΔP = 2kW, the pulse duration is calculated as the absolute value of the heat difference divided by the pulse power amplitude, resulting in 50 seconds. Therefore, the power is increased by 2kW, lasting for 50 seconds, and then returned to the original power, completing one adjustment.

[0047] According to the embodiments of this application, during the Czochralski single crystal pulling process, the actual crystal growth rate, the mass of the molten material in the crucible, and the mass of the thermal field components are obtained. Then, based on the actual growth rate and the mass of the material, the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate is determined. Finally, the power of the Czochralski single crystal pulling process is controlled based on this heat difference. This application, through precise calculation of the heat difference and power control based on it, avoids the under-adjustment or over-adjustment phenomena that occur in traditional control, and even the phenomenon of runaway in extreme cases. Steady-state deviation is eliminated, thereby ensuring the long-term stability of the crystal pulling process and a significant improvement in control accuracy.

[0048] In one optional embodiment of this application, a specific implementation of determining the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate based on the actual growth rate, the material mass, and the component mass may include: calculating the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

[0049] The specific heat of each material in the thermal field (such as molten liquid and thermal field components) is the core property for calculating the heat required to change the temperature.

[0050] For example, the specific heat of a melt (such as the specific heat of silicon). ≈703 J / kg.K) and the specific heat of thermal field components (such as graphite parts) in the thermal field. ≈710 J / kg·K). Specific heat represents the amount of heat required to change the temperature by 1 Kelvin per unit mass of a substance.

[0051] The mass of a substance with a significant heat capacity within a thermal field. For example, the mass of a molten liquid. The mass of the thermal field components in the thermal field .

[0052] Density parameters of crystals Density refers to the density of a solid crystal, that is, the mass per unit volume. The unit is kg / m³.

[0053] Latent heat of crystallization parameters This refers to the amount of heat released when a unit mass of a substance changes from a liquid state to a solid state (crystallization). For silicon, this is a fixed physical constant. The unit is J / kg.

[0054] thermal conductivity of crystal It is a physical parameter that measures the heat conductivity of a solid crystal (such as a silicon rod). It represents the amount of heat conducted through a unit area of ​​material per unit time under a unit temperature gradient. Unit: Watts per meter Kelvin (W / m·K).

[0055] Target duration The time integration range used for heat accumulation calculations is usually set as an empirical value based on the time delay characteristics of the thermal field.

[0056] In practice, by inputting the aforementioned measurable process parameters and fixed parameters, a clear heat difference is output, providing a basis for subsequent power control.

[0057] For example, taking the isodiameter process as an example, the measurement data for verifying the heat balance equation of crystallization are shown in Table 1 below:

[0058] From Table 1, =15.4J / s cm2, = 7.8J / s cm2, =7.6J / s cm2.

[0059] Considering measurement errors, these data satisfy the heat balance equation for crystallization. This equation describes the energy conservation (heat balance) at the growth interface. The heat balance can be used to derive formula (1): (1).

[0060] From formula (1): (2).

[0061] In formulas (1) and (2): Temperature gradient of crystal This refers to the rate of temperature change along the crystal rod from the growth interface (solid-liquid interface) upwards within a solid crystal. It represents the heat conduction within the crystal. It is used to calculate the heat klGl conducted from the melt to the interface (where kl is the thermal conductivity of the melt).

[0062] This represents the total heat flow lost from the interface (through conduction through the crystal).

[0063] thermal conductivity of melt Wh is a physical parameter that measures the heat conduction capacity of molten silicon. Unit: Watts per meter Kelvin (W / m·K).

[0064] Temperature gradient of melt This refers to the rate of temperature change from the growth interface towards the interior of the melt (liquid silicon). It represents the heat conduction within the melt and is used to calculate the heat conducted from the melt to the interface. (in It is the thermal conductivity of the melt.

[0065] This represents the heat flow from the melt supply to the interface.

[0066] Temperature gradient This refers to the temperature change per unit distance near the crystal growth interface. It can refer to the temperature gradient on one side of the crystal. or the temperature gradient on one side of the melt ( The unit is usually K / cm (Kelvin per centimeter) or K / m.

[0067] In the latent heat of crystallization In the middle, the growth rate ( ) and density ( ) and latent heat per unit mass ( These factors together determine the total amount of heat released per unit time due to crystal growth (phase transition). This heat must be conducted away in a timely manner through the thermal field via the crystal and melt to maintain a stable growth interface.

[0068] Under the premise of maintaining a stable crystal growth rate, by converting the spatial temperature gradient (Gs), which is difficult to measure directly, into a temperature difference (ΔT) between two points that is easy to monitor, a real-time, quantitative assessment of the thermal field state is achieved. Therefore, formula (2) is transformed into: (3).

[0069] According to the energy calculation formula (the amount of heat required for a substance (such as silicon or graphite components) to change temperature in a thermal field): (4).

[0070] Substituting formula (3) into (4) yields: (5).

[0071] In formulas (4) and (5), c is the specific heat and m is the mass of the thermal field structure.

[0072] In actual calculations, the actual average growth rate of the crystal is used. Replace actual growth rate Therefore, the heat model corresponding to the actual growth rate simplifies to: (6).

[0073] Similarly, the target growth rate The corresponding heat model simplifies to: (7).

[0074] Therefore, the deviation between the actual heat output and the corresponding heat demand at any given time is: : (8).

[0075] Substitute formulas (6) and (7) into formula (8): (9).

[0076] The deviation between the actual average growth rate and the target growth rate is represented by c, which represents the specific heat of the thermal field structure (including the melt and thermal field components), and m is the mass of the thermal field structure (including the melt and thermal field components).

[0077] The main heat capacity components in the thermal field structure are silicon and graphite. The specific heat of silicon is approximately 703 J / kg·K, and the specific heat of graphite is approximately 710 J / kg·K. Given the weight of silicon and the total weight of the thermal field, substitute into formula (9): (10).

[0078] In formulas (9) and (10), c1 is the specific heat of silicon, m1 is the mass of silicon, c2 is the specific heat of the graphite component, and m2 is the mass of the graphite component.

[0079] right Calculate the cumulative amount of heat by performing time integration. That is, the difference in calories: (11).

[0080] In formula (11), inf is an external parameter, i.e., the target duration.

[0081] In one optional embodiment of this application, a specific implementation of calculating the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration may include: calculating the instantaneous heat demand rate based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization term, and the thermal conductivity coefficient of the crystal; and integrating the instantaneous heat demand rate with respect to the target duration to obtain the heat difference.

[0082] The instantaneous heat demand rate refers to the rate at which the thermal field needs to increase or release heat to bring the actual growth rate closer to the target growth rate at a given moment. It is calculated based on the physical properties of the thermal field and the deviation in growth rate.

[0083] The specific heat capacity of a thermal field structure refers to the total heat capacity of the thermal field structure, which is the sum of the specific heat capacity of the molten liquid and the specific heat capacity of the thermal field components. The specific heat capacity of the molten liquid is the product of the material mass and the specific heat of the molten liquid, while the specific heat capacity of the thermal field components is the product of the component mass and the specific heat of the thermal field components. For example, the above... .

[0084] Actual growth rate (or actual average growth rate) ) and target growth rate Rate deviation between .

[0085] The deviation value of the latent heat of crystallization term refers to the difference between the latent heat of crystallization term corresponding to the actual growth rate and the latent heat of crystallization term corresponding to the target growth rate. The deviation value of the latent heat of crystallization term is obtained by calculating the product of the rate deviation, density parameter, and latent heat of crystallization parameter. .

[0086] Finally, the instantaneous heat demand rate was calculated: .

[0087] The heat difference is the cumulative value of the instantaneous heat demand rate over a target duration, used to guide the total amount of power adjustment.

[0088] According to formula (11), the instantaneous heat demand rate Integrate the result based on the target duration (inf) to obtain the heat difference. .

[0089] Reference Figure 2 The diagram illustrates a flowchart of a power control method according to an embodiment of this application, which may specifically include the following steps: Step 201: During the Czochralski single crystal growth process, obtain the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly.

[0090] In the embodiments of this application, the specific implementation of this step can be found in the description of the foregoing embodiments, and will not be repeated here.

[0091] Step 202: Based on the actual growth rate, the material mass, and the component mass, determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate.

[0092] In the embodiments of this application, the specific implementation of this step can be found in the description of the foregoing embodiments, and will not be repeated here.

[0093] Step 203: Determine the power adjustment direction based on the sign of the heat difference or the relationship between the actual growth rate and the target growth rate.

[0094] In the embodiments of this application, the power adjustment direction refers to whether the power needs to decrease or increase.

[0095] In this embodiment of the application, when the heat difference is negative ( If the actual growth rate is greater than the target growth rate, it indicates that the actual heat is insufficient and needs to be compensated for by increasing the power; if the heat difference is positive ( When the actual growth rate is less than the target growth rate, it indicates that there is an excess of heat, and the excess heat needs to be released by reducing power.

[0096] Step 204: Adjust the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction; and / or, adjust the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

[0097] In the embodiments of this application, pulse power control is a short-time, high-intensity power control method used to quickly offset thermal deviations. Specifically, it uses pulsed power control.

[0098] In the embodiments of this application, the persistent power correction is a continuous control method, also known as long-term power control, used to compensate for thermal deviations over a long period of time and ensure the stability of the system.

[0099] In the embodiments of this application, the pulse power control and the persistent power correction amount are used for fast response and long-term stability, respectively. They can be used independently or in combination.

[0100] For example, pure pulse power control, pure long-term power control, or a combined pulse and long-term control strategy based on heat difference calculation can be used and executed cyclically according to the control cycle. Within each control cycle: pure pulse power control, pure long-term power control, or both pulse power control and long-term power control can be executed simultaneously.

[0101] By introducing pulsed power control and persistent power correction, the problems of untimely and inaccurate adjustments and steady-state deviations in traditional control methods are solved. Pulse power control can quickly offset thermal deviations, while persistent power correction can eliminate steady-state deviations. Pulse power control can complete thermal adjustment within minutes, significantly improving control response speed. Persistent power correction eliminates steady-state deviations, ensuring the long-term stability of the crystal pulling process.

[0102] As the size of the thermal field increases and the structure becomes more complex, the temperature lag increases significantly, resulting in a slow control response and an inability to adjust the power in a timely manner to meet actual needs, leading to untimely control issues.

[0103] In one optional embodiment of this application, a specific implementation of adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction may include: determining the duration of a first pulse based on the absolute value of the heat difference and a preset pulse power waveform; and controlling the power of the Czochralski single crystal process based on the power adjustment direction, the preset pulse power waveform, and the duration of the first pulse.

[0104] A preset pulse power waveform refers to a predefined form of power change, such as a rectangular wave or a sine wave. Its function is to guide how the power changes within a short period of time to complete the heat adjustment.

[0105] The duration of the first pulse refers to the duration of power adjustment, which is calculated based on the heat difference and the preset pulse power waveform.

[0106] Calorie difference With preset pulse power waveform and the duration of the first pulse The following relationship exists:

[0107] After calculating the heat deviation Then, the power is rapidly adjusted using pulses. The basic relationship follows... Preset pulse power waveform According to the duration of the first pulse The integral should equal the difference in heat. Therefore, by setting a fixed preset pulse power waveform... The difference between the calculated heat value and the actual heat value The system automatically calculates the duration of the first pulse required for the preset pulse power waveform. The first pulse duration is reached. After that, the power is restored to the reference level before adjustment, forming a complete pulse power control cycle.

[0108] This pure pulse power control method, by applying high-amplitude, short-duration power pulses, overcomes the thermal inertia of large thermal fields, enabling the rapid injection or extraction of large amounts of heat within minutes. This significantly solves the bottleneck problems of slow and untimely response in traditional control. Each pulse corresponds to a precisely calculated energy packet, resulting in precise and transparent control behavior, avoiding the ambiguity of traditional continuous adjustment. After the pulse ends, the power returns to the baseline, preventing long-term power deviations in the thermal field, making it particularly suitable for correcting temporary and fluctuating growth deviations.

[0109] For example, using a rectangular pulse power control method, the power amplitude is set to P1. During adjustment, based on the power adjustment direction, the current power value P0 is directly adjusted to P0±P1. According to the formula... Automatically calculate the duration of the first pulse When the power duration is greater than the duration of the first pulse Then, the power is adjusted back to the original power P0, thus achieving one adjustment.

[0110] For example, using a sine / cosine pulse power control method, the power amplitude is set to P1. During adjustment, based on the power adjustment direction, the current power value P0 slowly increases (decreases) according to a sine curve. When the power increase (decrease) reaches P1, the power begins to decrease (increase). Furthermore, the heat generated by integrating the power change over the duration of the first pulse equals the heat difference. The duration of the first pulse is automatically calculated. When the power duration is greater than the duration of the first pulse Then, the power is adjusted back to the original power P0, thus achieving one adjustment.

[0111] like Figure 3 The diagram shows several waveforms that can be achieved by pulse power control. Pulse power control methods include, but are not limited to, the two pulse waveforms illustrated above. The power control method can be any pulse control waveform depending on actual needs, as long as the heat generated by integrating the power change over the first pulse duration equals the heat difference. Then the power is adjusted back to the original power P0, achieving this with a single adjustment.

[0112] Different waveforms can be selected for power control of different sizes of thermal fields, which not only improves the efficiency of heat control but also reduces the thermal shock caused by power fluctuations.

[0113] In one optional embodiment of this application, a specific implementation of adjusting the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction may include: determining a first power correction amount based on the heat difference and a preset duration; and controlling the power of the Czochralski single crystal process based on the power adjustment direction and the first power correction amount.

[0114] This method is also based on the heat difference. However, its goal is to generate a persistent first power correction P2, which directly adjusts the base power P0 over a long period, adjusting the power from P0 to P0+P2. The algorithm for calculating P2 takes into account the time-delay characteristics of the thermal field, aiming to compensate for the steady-state energy imbalance of the system at its root.

[0115] Based on the heat difference and the preset duration, a first power correction amount is calculated to adjust the power over the long term to eliminate steady-state deviation. In practice, the first power correction amount can be obtained by directly dividing the heat difference by the preset duration.

[0116] For example, the reaction time for different thermal field power fluctuations of 0.5 kW at temperature is shown in Table 2 below:

[0117] Based on the temperature response time of the different built-in thermal fields, the system automatically calculates the power adjustment range ±P2. During adjustment, the power is adjusted from P0 to P0+P2.

[0118] This pure long-term power control method abandons the traditional proportional calculation based on instantaneous pulling speed deviation and instead adopts an algorithm based on heat difference. This more profoundly reflects the long-term, continuous deviation of the system, thus calculating a more accurate first power correction. By correcting the base power over a long period, a more stable new thermal equilibrium point is established for crystal growth, effectively preventing the accumulation of deviations and ensuring the long-term stability of the process.

[0119] In one optional embodiment of this application, a specific implementation of adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction, and adjusting the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction, may include: determining a second pulse duration based on the absolute value of the heat difference and a preset pulse power waveform; determining a second power correction amount based on the product of the heat difference and a preset ratio, and the preset duration; and controlling the power of the Czochralski single crystal process based on the power adjustment direction, the preset pulse power waveform, the second pulse duration, and the second power correction amount.

[0120] By combining the two control strategies mentioned above synchronously, complementary advantages are achieved. Within a control cycle, pulse power control and long-term power control are initiated, calculated, and executed in parallel.

[0121] Pulse power control is responsible for quickly offsetting most of the heat difference. .

[0122] Long-term power control simultaneously calculates a supplementary second power correction to compensate for energy losses that may be caused by heat loss or other reasons in pulse power control, and to counteract the long-term deviation trend of the system.

[0123] For example, if 100kJ of energy needs to be replenished, pulse power control calculates and executes based on 100kJ; simultaneously, long-term power control calculates a proportion (e.g., 30%) of the heat (30kJ) and converts it into a persistent second power correction. Both work synchronously to ensure that energy replenishment is both rapid and thorough.

[0124] The aforementioned preset ratio is an empirical value obtained through multiple trials and adjustments, and has achieved the desired effect.

[0125] Simultaneously, a second power correction amount is applied using pulse power control and long-term power control to quickly offset thermal deviations and ensure long-term stability.

[0126] By combining pulse power control and long-term power control with a second power correction, the problems of untimely and inaccurate control in traditional control methods are solved, achieving power control that balances fast response and long-term stability. This enables the system to cope with various complex operating conditions, thereby improving crystal pulling efficiency and crystal quality.

[0127] For example, such as Figure 4 The actual average growth rate during a certain constant diameter process is shown. and target growth rate A schematic diagram. The solid line in the diagram represents the actual average growth rate. The dashed line represents the target growth rate. .

[0128] According to formula (11) Calculate the heat difference .

[0129] like Figure 5 The graph shown is a real-time curve of the heat difference calculation, with the power amplitude set to 2 kW. After the growth closed-loop is started, the power begins to vibrate and adjust. The growth control is set with a control cycle, and at the end of each control cycle, the power is adjusted once based on the current heat difference. Figure 6The diagram illustrates the adjustment of the power rectangular wave and the deviation in pulling speed. The solid line in the diagram represents the power rectangular wave, and the dashed line represents the deviation in pulling speed, i.e., the actual average growth rate. and target growth rate The deviation.

[0130] The calculated heat difference is increased or released using two power control methods, which are rapid and accurate. During crystal pulling, the rate of human intervention in power control has decreased from 50% to 0%. The thermal field reaction time has decreased from 60 minutes to 20 minutes.

[0131] It should be noted that, in the embodiments of this application, the power control method provided can be executed by a power control device, or a control module within the power control device for executing the method of applied power control. This application embodiment uses the method of applied power control executed by a power control device as an example to illustrate the power control method provided in this application embodiment.

[0132] Reference Figure 7 The diagram illustrates a structural block diagram of another embodiment of the present invention, which provides a power control device embodiment that may specifically include: The information acquisition module 301 is used to acquire the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly during the Czochralski single crystal growth process. The difference determination module 302 is used to determine the heat difference between the actual heat field heat corresponding to the actual growth rate and the target heat field heat corresponding to the target growth rate, based on the actual growth rate, the material mass and the component mass. The power control module 303 is used to control the power of the Czochralski single crystal process based on the heat difference.

[0133] Optionally, the difference determination module includes: The difference determination submodule is used to calculate the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

[0134] Optionally, the difference determination submodule includes: The instantaneous heat demand rate calculation unit is used to calculate the instantaneous heat demand rate based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization term, and the thermal conductivity coefficient of the crystal; wherein, the specific heat capacity of the thermal field structure is the sum of the specific heat capacity of the melt and the specific heat capacity of the thermal field structure, the specific heat capacity of the solution is the product of the mass of the material and the specific heat of the melt, the specific heat capacity of the thermal field component is the product of the mass of the component and the specific heat of the thermal field component, and the deviation value is the product of the rate deviation between the actual growth rate and the target growth rate, the density parameter, and the latent heat of crystallization parameter; The heat difference calculation unit is used to perform an integral calculation on the instantaneous heat demand rate over the target duration to obtain the heat difference.

[0135] Optionally, the power control module includes: The direction determination submodule is used to determine the power adjustment direction based on the sign of the heat difference or the magnitude relationship between the actual growth rate and the target growth rate. The power adjustment submodule is used to adjust the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction; and / or, to adjust the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

[0136] Optionally, the power adjustment submodule includes: The first pulse duration determination unit is used to determine the first pulse duration based on the absolute value of the heat difference and the preset pulse power waveform. A pulse power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction, the preset pulse power waveform and the first pulse duration.

[0137] Optionally, the power adjustment submodule includes: The first correction amount determination unit is used to determine the first power correction amount based on the heat difference and the preset duration; A long-term power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction and the first power correction amount.

[0138] Optionally, the power adjustment submodule includes: The second pulse duration determination unit is used to determine the second pulse duration based on the absolute value of the heat difference and the preset pulse power waveform. The second correction amount determination unit is used to determine the second power correction amount based on the product of the heat difference and the preset ratio, and the preset duration. A power control unit is used to control the power of the Czochralski single crystal process according to the power adjustment direction, the preset pulse power waveform and the second pulse duration, and the second power correction amount.

[0139] According to the embodiments of this application, during the Czochralski single crystal pulling process, the actual crystal growth rate, the mass of the molten material in the crucible, and the mass of the thermal field components are obtained. Then, based on the actual growth rate, the mass of the material, and the mass of the components, the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate is determined. Finally, the power of the Czochralski single crystal pulling process is controlled based on the heat difference. This application, through precise calculation of the heat difference and power control based on it, avoids the phenomena of under-adjustment or over-adjustment that occur in traditional control, and even the phenomenon of runaway in extreme cases. Steady-state deviation is eliminated, thereby ensuring the long-term stability of the crystal pulling process and a significant improvement in control accuracy.

[0140] As the device embodiment is basically similar to the method embodiment, the description is relatively simple, and relevant parts can be found in the description of the method embodiment.

[0141] Figure 8 This is a structural block diagram illustrating an electronic device 700 for power control according to an exemplary embodiment. For example, the electronic device 700 may be a computer.

[0142] Reference Figure 8 The electronic device 700 may include one or more of the following components: a processing component 702, a memory 704, a power supply component 706, a multimedia component 708, an audio component 710, an input / output (I / O) interface 712, a sensor component 714, and a communication component 716.

[0143] Processing component 702 typically controls the overall operation of electronic device 700, such as operations associated with display, telephone calls, data communication, camera operation, and recording operations. Processing component 702 may include one or more processors 720 to execute instructions to complete all or part of the steps of the methods described above. Furthermore, processing component 702 may include one or more modules to facilitate interaction between processing component 702 and other components. For example, processing component 702 may include a multimedia module to facilitate interaction between multimedia component 708 and processing component 702.

[0144] Memory 704 is configured to store various types of data to support the operation of device 700. Examples of this data include instruction messages, pictures, videos, etc., for any application or method operating on electronic device 700. Memory 704 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.

[0145] Power supply component 706 provides power to various components of electronic device 700. Power supply component 706 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power to electronic device 700.

[0146] Multimedia component 708 includes a screen that provides an output interface between the electronic device 700 and the user. In some embodiments, the screen may include a liquid crystal display (LCD) and a touch panel (TP). If the screen includes a touch panel, the screen may be implemented as a touchscreen to receive input signals from the user. The touch panel includes one or more touch sensors to sense touches, swipes, and gestures on the touch panel. The touch sensors may sense not only the boundaries of the touch or swipe action but also the duration and pressure associated with the touch or swipe operation.

[0147] Audio component 710 is configured to output and / or input audio signals. For example, audio component 710 includes a microphone (MIC) configured to receive external audio signals when electronic device 700 is in an operating mode, such as call mode, recording mode, and voice recognition mode. The received audio signals may be further stored in memory 704 or transmitted via communication component 716. In some embodiments, audio component 710 also includes a speaker for outputting audio signals.

[0148] I / O interface 712 provides an interface between processing component 702 and peripheral interface modules, such as keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to, home buttons, volume buttons, power buttons, and lock buttons.

[0149] Sensor assembly 714 includes one or more sensors for providing state assessments of various aspects of electronic device 700. For example, sensor assembly 714 may detect the on / off state of device 700, the relative positioning of components such as the display and keypad of electronic device 700, changes in position of electronic device 700 or a component of electronic device 700, the presence or absence of user contact with electronic device 700, orientation or acceleration / deceleration of electronic device 700, and temperature changes of electronic device 700. Sensor assembly 714 may include a proximity sensor configured to detect the presence of nearby objects without any physical contact. Sensor assembly 714 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, sensor assembly 714 may also include an accelerometer, gyroscope, magnetometer, pressure sensor, or temperature sensor.

[0150] Communication component 716 is configured to facilitate wired or wireless communication between electronic device 700 and other devices. Electronic device 700 can access wireless networks based on communication standards, such as WiFi, 2G, or 3G, or combinations thereof. In one exemplary embodiment, communication component 716 receives broadcast signals or broadcast-related information from an external broadcast management system via a broadcast channel. In one exemplary embodiment, communication component 716 also includes a near-field communication (NFC) module to facilitate short-range communication. For example, the NFC module may be implemented based on radio frequency identification (RFID) technology, Infrared Data Association (IrDA) technology, ultra-wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.

[0151] In an exemplary embodiment, the electronic device 700 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the methods described above.

[0152] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory 704 including instructions, which can be executed by a processor 720 of an electronic device 700 to perform the above-described method. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0153] A non-transitory computer-readable storage medium, when instructions in the storage medium are executed by a terminal's processor, enables the terminal to perform a power control method, the method comprising: In the process of Czochralski single crystal growth, the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly are obtained. Based on the actual growth rate, the material mass, and the component mass, determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate. The power of the Czochralski single crystal growth process is controlled based on the heat difference.

[0154] Optionally, determining the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate, based on the actual growth rate, the material mass, and the component mass, includes: The heat difference is calculated based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

[0155] Optionally, the step of calculating the heat difference based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration includes: The instantaneous heat demand rate is calculated based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization, and the thermal conductivity of the crystal. Specifically, the specific heat capacity of the thermal field structure is the sum of the specific heat capacity of the melt and the specific heat capacity of the thermal field structure; the specific heat capacity of the solution is the product of the mass of the material and the specific heat of the melt; the specific heat capacity of the thermal field component is the product of the mass of the component and the specific heat of the thermal field component; and the deviation value is the ratio of the actual growth rate to the target growth rate. The product of the growth rate deviation, the density parameter, and the latent heat of crystallization parameter; The instantaneous heat demand rate is integrated over the target duration to obtain the heat difference.

[0156] Optionally, controlling the power of the Czochralski single crystal growth process based on the heat difference includes: The direction of power adjustment is determined based on the sign of the heat difference or the relationship between the actual growth rate and the target growth rate. The power of the Czochralski single crystal process is adjusted using a pulsed power method based on the absolute value of the heat difference and the power adjustment direction; and / or, the power of the Czochralski single crystal process is adjusted using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

[0157] Optionally, adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction includes: The duration of the first pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, and the duration of the first pulse.

[0158] Optionally, adjusting the power of the Czochralski single crystal process based on the absolute value of the heat difference and the power adjustment direction using a persistent power correction amount includes: Based on the heat difference and the preset duration, a first power correction amount is determined; The power of the Czochralski single crystal process is controlled according to the power adjustment direction and the first power correction amount.

[0159] Optionally, adjusting the power of the Czochralski single crystal process using pulsed power based on the absolute value of the heat difference and the power adjustment direction; and adjusting the power of the Czochralski single crystal process using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction, includes: The duration of the second pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The second power correction amount is determined based on the product of the heat difference and the preset ratio, as well as the preset duration. The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, the second pulse duration, and the second power correction amount.

[0160] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts between the various embodiments, please refer to each other.

[0161] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0162] Embodiments of the present invention are described with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0163] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0164] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0165] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments, as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0166] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0167] The present invention has provided a detailed description of a power control method, a power control device, an electronic device, and a readable storage medium. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A power control method, characterized in that, The method includes: In the process of Czochralski single crystal growth, the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly are obtained. Based on the actual growth rate, the material mass, and the component mass, determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate. The power of the Czochralski single crystal growth process is controlled based on the heat difference.

2. The method according to claim 1, characterized in that, The step of determining the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate based on the actual growth rate, the material mass, and the component mass includes: The heat difference is calculated based on the material mass, the component mass, the specific heat of the melt, the specific heat of the thermal field component, the actual growth rate, the target growth rate, the density parameter of the crystal, the latent heat of crystallization parameter of the crystal, the thermal conductivity coefficient of the crystal, and the target duration.

3. The method according to claim 2, characterized in that, The calculation of the heat difference based on the material mass, component mass, specific heat of the melt, specific heat of the thermal field component, actual growth rate, target growth rate, density parameter of the crystal, latent heat of crystallization parameter of the crystal, thermal conductivity coefficient of the crystal, and target duration includes: The instantaneous heat demand rate is calculated based on the specific heat capacity of the thermal field structure, the deviation value of the latent heat of crystallization, and the thermal conductivity of the crystal. Wherein, the specific heat capacity of the thermal field structure is the sum of the specific heat capacity of the melt and the specific heat capacity of the thermal field structure; the specific heat capacity of the solution is the product of the mass of the material and the specific heat of the melt; the specific heat capacity of the thermal field component is the product of the mass of the component and the specific heat of the thermal field component; the deviation value is the product of the rate deviation between the actual growth rate and the target growth rate, the density parameter, and the latent heat of crystallization parameter. The instantaneous heat demand rate is integrated over the target duration to obtain the heat difference.

4. The method according to any one of claims 1-3, characterized in that, The step of controlling the power of the Czochralski single crystal growth process based on the heat difference includes: The direction of power adjustment is determined based on the sign of the heat difference or the relationship between the actual growth rate and the target growth rate. The power of the Czochralski single crystal process is adjusted using a pulsed power method based on the absolute value of the heat difference and the power adjustment direction; and / or, the power of the Czochralski single crystal process is adjusted using a persistent power correction amount based on the absolute value of the heat difference and the power adjustment direction.

5. The method according to claim 4, characterized in that, The step of adjusting the power of the Czochralski single crystal process using pulsed power, based on the absolute value of the heat difference and the power adjustment direction, includes: The duration of the first pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, and the duration of the first pulse.

6. The method according to claim 4, characterized in that, The step of adjusting the power of the Czochralski single crystal process based on the absolute value of the heat difference and the power adjustment direction, using a persistent power correction amount, includes: Based on the heat difference and the preset duration, a first power correction amount is determined; The power of the Czochralski single crystal process is controlled according to the power adjustment direction and the first power correction amount.

7. The method according to claim 4, characterized in that, The power of the Czochralski single crystal pulling process is adjusted using pulsed power based on the absolute value of the heat difference and the power adjustment direction. And, based on the absolute value of the heat difference and the power adjustment direction, a persistent power correction is used to adjust the power of the Czochralski single crystal process, including: The duration of the second pulse is determined based on the absolute value of the heat difference and the preset pulse power waveform; The second power correction amount is determined based on the product of the heat difference and the preset ratio, as well as the preset duration. The power of the Czochralski single crystal process is controlled according to the power adjustment direction, the preset pulse power waveform, the second pulse duration, and the second power correction amount.

8. A power control device, characterized in that, The device includes: The information acquisition module is used to acquire the actual growth rate of the crystal, the material mass of the molten liquid in the crucible, and the component mass of the thermal field assembly during the Czochralski single crystal growth process. The difference determination module is used to determine the heat difference between the actual thermal field heat corresponding to the actual growth rate and the target thermal field heat corresponding to the target growth rate, based on the actual growth rate, the material mass, and the component mass. The power control module is used to control the power of the Czochralski single crystal growth process based on the heat difference.

9. An electronic device, characterized in that, It includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the power control method as described in any one of claims 1-7.

10. A readable storage medium, characterized in that, The readable storage medium stores a program or instructions that, when executed by a processor, implement the steps of the power control method as described in any one of claims 1-7.

Images