System for detecting impurity gases in high-purity helium and argon in semiconductor industry

Abstract

The invention discloses a system for detecting impurity gases in high-purity helium and argon in the semiconductor industry, and relates to the technical field of gas detection, which comprises the following steps: acquiring an environment detection point in a conveying pipeline and marking a flange detection position; obtaining combinations of the environment detection point locations and a feature difference value of each combination; after the absorption spectrum is obtained, correcting the concentration of the component by using the characteristic difference value; the method is used for solving the problems that in an existing method for detecting impurity gas in high-purity helium and argon in the semiconductor industry, when temperature and pressure fluctuation exists in the environment in a gas conveying pipeline, the environment in the pipeline cannot be fully utilized to correct the concentration of the impurity gas obtained through detection; and the placement position of the detection instrument cannot be set based on the environmental characteristics in the pipeline, so that deviation still exists in the corrected gas concentration.

Description

Technical Field

[0001] This invention relates to the field of gas detection technology, specifically to a system for detecting impurity gases in high-purity helium and argon for use in the semiconductor industry. Background Technology

[0002] Detection of impurity gases in high-purity helium and argon is a critical step in semiconductor manufacturing to ensure the purity of process gases, which is directly related to chip yield and production safety. The core objective of the detection is to accurately measure trace impurities, mainly including moisture, oxygen, nitrogen, hydrogen, carbon dioxide, and total hydrocarbons. If these impurities exceed the standard, they may lead to thin film deposition defects, chip performance degradation, or even equipment damage.

[0003] Existing methods for detecting impurity gases in high-purity helium and argon in the semiconductor industry typically involve improvements to a single gas detection method. For example, when using tunable diode laser absorption spectroscopy to detect impurity gases, the method corrects the gas concentration detection values ​​under different pressures to eliminate the influence of high-pressure environments on the absorption characteristics of impurity spectra. While this improvement method can enhance the accuracy of impurity gas concentration detection, the correction approach is somewhat one-sided, relying solely on high-pressure environments for gas concentration detection. This leads to limitations when temperature and pressure fluctuations exist within gas pipelines in the semiconductor industry. Furthermore, it fails to fully utilize the pipeline environment to correct for the detected impurity gas concentration. Additionally, it cannot determine the placement of the detection instrument based on the pipeline's environmental characteristics. For instance, flange-type detection units used for tunable diode laser absorption spectroscopy detection cannot effectively incorporate the detection results into the temperature and pressure within the pipeline. The problem of deviations in the corrected gas concentration persists. For example, patent application CN115825004A discloses a wavelength locking device and method for gas detection tunable semiconductor lasers. This solution uses piecewise linear interpolation to correct the gas concentration detection values ​​under different pressures, thereby eliminating the influence of high-pressure environments on the absorption characteristics of impurity spectra. However, other improvements to impurity gas detection methods in high-purity helium and argon used in the semiconductor industry usually focus on improving the laser extension during absorption spectrum acquisition. These improvements still cannot solve the problem of temperature and pressure fluctuations within gas pipelines in the semiconductor industry. They cannot fully utilize the environment within the pipeline to correct the detected impurity gas concentration, nor can they set the placement of the detection instrument based on the environmental characteristics within the pipeline. Consequently, the detection results obtained by the instrument cannot effectively combine the temperature and pressure within the pipeline, resulting in deviations in the corrected gas concentration. Summary of the Invention

[0004] This invention aims to at least partially solve one of the technical problems in the prior art by proposing a detection system for impurity gases in high-purity helium and argon for the semiconductor industry. This system addresses the shortcomings of existing methods for detecting impurity gases in high-purity helium and argon in the semiconductor industry. These methods fail to fully utilize the fluctuating temperature and pressure within the gas pipeline environment to correct for the detected impurity gas concentration. Furthermore, the system cannot determine the placement of the detection instrument based on the environmental characteristics within the pipeline, resulting in the detection results not effectively incorporating the temperature and pressure within the pipeline, leading to deviations in the corrected gas concentration.

[0005] To achieve the above objectives, this application provides a high-purity helium and argon impurity gas detection system for the semiconductor industry, including a pipeline detection point positioning module, a multi-state detection and analysis module, and a gas impurity detection module. The pipeline inspection point positioning module is used to analyze the pipeline for transporting the gas to be detected, and based on the analysis results, obtain multiple environmental inspection points in the pipeline; based on the location of the environmental inspection points, mark the flange inspection location in the pipeline, wherein the gas to be detected is high-purity helium or high-purity argon. The multi-state detection and analysis module is used to analyze pipelines under various temperatures and pressures using flange-type detection units, and obtains the combination of environmental detection points corresponding to each temperature and pressure, as well as the characteristic difference of the components corresponding to each combination based on the analysis results. The gas impurity detection module is used to obtain the characteristic difference value of the corresponding component based on the temperature and pressure inside the delivery pipeline when the detection gas is introduced into the delivery pipeline. After the absorption spectrum is obtained by the flange-type detection unit, the characteristic difference value is used to correct the concentration of the component obtained from the absorption spectrum.

[0006] Furthermore, the pipeline inspection point positioning module includes a pipeline inspection point positioning unit, which is configured with a pipeline inspection point positioning strategy, including: Obtain all the delivery pipes used to transport the detection gas in the semiconductor factory, and label the straight pipes in all the delivery pipes based on the bends and valves in the delivery pipes. The straight pipe is a delivery pipe that is straight and does not contain bends or valves. The longest straight pipe is marked as the first delivery pipe. Two pipe axes are randomly selected from the inner wall of the first delivery pipe, and are denoted as the temperature analysis axis and the pressure analysis axis, respectively. The temperature analysis axis and the pressure analysis axis are parallel to each other. High-temperature resistant clamps were used to fix the temperature-sensing optical fiber and the distributed optical fiber pressure sensor onto the temperature analysis axis and the pressure analysis axis, respectively.

[0007] Furthermore, the pipeline inspection point location strategy also includes: When the semiconductor factory is in operation, sensing data from the temperature-sensing fiber and the distributed fiber optic pressure sensor are acquired every tmin until the semiconductor factory ends operation. The sensing data obtained from the temperature-sensing fiber is recorded as the pipe temperature data, and the sensing data obtained from the distributed fiber optic pressure sensor is recorded as the pipe pressure data. Both the pipe temperature data and the pipe pressure data contain multiple sets of sensing data, and the time interval between adjacent sets of sensing data is tmin. Using the feature data analysis method, the pipe temperature data and pipe pressure data are analyzed separately. The array of feature distances obtained from the pipe temperature data is recorded as the temperature distance array, and the array of feature distances obtained from the pipe pressure data is recorded as the pressure distance array.

[0008] Furthermore, feature data analysis methods include: The unit corresponding to the detected data in the sensing data is denoted as the sensing unit; a Cartesian coordinate system is established with the unit of the horizontal axis being cm and the unit of the vertical axis being the sensing unit, and this system is denoted as the feature analysis coordinate system. For any set of sensor data, based on the distance between the sensor point and the air inlet in the sensor data, and the data value obtained from the sensor point, the curve corresponding to the sensor data is obtained in the feature analysis coordinate system and recorded as the sensor feature curve. Within the same feature analysis coordinate system, obtain the sensing feature curves of all groups of sensing data, and record the intersection of all sensing feature curves as curve intersection points; for any curve intersection point, record the number of sensing feature curves that intersect at the curve intersection point as the intersection value of the curve intersection point. The intersection point of the curves with the largest intersection value is recorded as the characteristic intersection point, and the abscissa of all characteristic intersection points is marked as the characteristic distance of the sensing data.

[0009] Furthermore, the pipeline inspection point location strategy also includes: The intersection of the temperature distance array and the pressure distance array is denoted as the sensor correlation array. When the number of values ​​in the sensor correlation array is greater than or equal to 2, the values ​​in the sensor correlation array are denoted as L1 to L... n And within the first delivery pipe, the distances from the air inlet are L1 to L... n All points are recorded as environmental monitoring points; When the number of values ​​in the sensor association array is less than 2, obtain the minimum association value for each value in the temperature distance array, and based on the minimum association value in ascending order, record all values ​​in the temperature distance array as B1 to B1. rWhere r is the number of values ​​in the temperature distance array. For any value A in the temperature distance array: obtain the absolute value of the difference between A and all values ​​in the pressure distance array, and record the minimum value among all absolute values ​​as the minimum correlation value of A; mark the points in the first delivery pipeline that are at distances B1 and B2 from the air inlet as environmental detection points. Obtain the environmental monitoring points that are farthest and closest to the air inlet from all environmental monitoring points, and record them as the farthest point and the closest point, respectively. Record the midpoint between the farthest point and the closest point as the flange monitoring location.

[0010] Furthermore, the multi-state detection and analysis module includes a multi-state detection and analysis unit, which is configured with a multi-state detection and analysis strategy, including: The distance between the flange inspection location and the air inlet is denoted as L; environmental inspection points with a distance less than L from the air inlet are denoted as near inspection points, and environmental inspection points with a distance greater than L from the air inlet are denoted as far inspection points. For any near detection point α1 and far detection point α2: the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 on the sensing characteristic curve corresponding to the pipe temperature data is recorded as the average characteristic temperature; the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 on the sensing characteristic curve corresponding to the pipe pressure data is recorded as the average characteristic pressure.

[0011] Furthermore, the multi-state detection and analysis strategy also includes: Based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. When the temperature and pressure in the first delivery pipeline are the average characteristic temperature and average characteristic pressure, respectively, a controllable concentration detection gas is input into the first delivery pipeline through the inlet. Based on the tunable diode laser absorption spectrum obtained by the flange detection unit, the concentration of components other than the main gas in the detection gas is obtained. The controllable concentration detection gas is the detection gas in which the concentration of all components other than the main gas has been obtained. The main gases in high-purity helium and high-purity argon are helium and argon, respectively. For any component β in the detection gas other than the main gas: the concentration of component β in the detection gas before it is input into the first delivery pipe is recorded as the actual concentration, the concentration of component β obtained by the tunable diode laser absorption spectrum is recorded as the spectral concentration, and the difference between the actual concentration and the spectral concentration is recorded as the characteristic difference of component β.

[0012] Furthermore, the multi-state detection and analysis strategy also includes: Obtain the characteristic differences of all components in the detected gas other than the main gas; Obtain all combinations of near and far detection points, and obtain the characteristic differences of all components in the detection gas except the main gas for each combination.

[0013] Furthermore, the gas impurity detection module includes a gas impurity detection unit, which is configured with a gas impurity detection strategy, including: When the detection gas is introduced into the delivery pipeline, the temperature and pressure in the first delivery pipeline are acquired in real time and recorded as real-time temperature and real-time pressure. The difference between the average characteristic temperature and the real-time temperature corresponding to each combination of near detection point and far detection point is acquired respectively. Based on the absolute value of the difference, the temperature influence level of all combinations is recorded as 1 to p in order from small to large, where p is the number of combinations of near detection point and far detection point. The difference between the average characteristic pressure and the real-time pressure corresponding to each combination of near and far detection points is obtained, and the pressure influence level of all combinations is recorded as 1 to p in order of increasing absolute value of the difference.

[0014] Furthermore, gaseous impurity detection strategies also include: The combination of the near and far detection points that minimizes the sum of the temperature and pressure influence levels is designated as the first detection combination. Based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. The concentration of components other than the main gas in the detection gas is obtained from the tunable diode laser absorption spectrum obtained by the flange detection unit and recorded as the real-time concentration of the components. For any component β: the sum of the characteristic difference of component β corresponding to the first detection combination and the real-time concentration of component β is recorded as the real-time detection concentration of component β; obtain the real-time detection concentration of all components in the detection gas.

[0015] The beneficial effects of this invention are as follows: This application first analyzes the pipeline for transporting the detected gas and, based on the analysis results, obtains multiple environmental monitoring points in the pipeline. Based on the location of these environmental monitoring points, flange detection locations are marked in the pipeline. This approach allows for the analysis of the pipeline containing the detected gas, resulting in the identification of environmental and flange detection points. This enables the acquisition of points with relatively stable temperature and pressure within the pipeline, i.e., environmental monitoring points, based on the temperature and pressure variation characteristics within the pipeline. This reduces the impact of temperature and pressure fluctuations within the pipeline on concentration detection and correction during subsequent data analysis. Furthermore, by determining the flange detection points, it ensures that after placing a flange-type detection unit at the flange detection point, the tunable diode laser absorption spectrum obtained by the flange-type detection unit can fully integrate with the environmental monitoring data of the environmental monitoring points. This ensures that the detection results obtained by the detection instrument effectively combine the temperature and pressure within the pipeline, preventing deviations in the corrected gas concentration. This application also uses a flange-type detection unit to analyze the conveying pipeline under various temperatures and pressures, and based on the analysis results, obtains the combination of environmental detection points corresponding to each temperature and pressure, as well as the characteristic difference value of the components corresponding to each combination. Finally, based on the temperature and pressure inside the conveying pipeline when the detection gas is introduced, the characteristic difference value of the corresponding components is obtained. After obtaining the absorption spectrum by the flange-type detection unit, the concentration of the components obtained from the absorption spectrum is corrected using the characteristic difference value. The advantage of this is that by obtaining the combination of environmental detection points corresponding to each temperature and pressure, and obtaining the characteristic difference value of the components corresponding to each combination, the concentration of the detected impurity gas can be effectively corrected when the conveying pipeline is in different temperature and pressure environments. Thus, under the premise of combining the placement of the detection instrument with the temperature and pressure characteristics inside the pipeline, the environment inside the pipeline is fully utilized to correct the concentration of the detected impurity gas, further improving the accuracy of impurity gas concentration detection. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the system of the present invention; Figure 2 This is a schematic diagram of the first conveying pipeline of the present invention; Figure 3 This is a schematic diagram of the feature analysis coordinate system of the present invention. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] Please see Figure 1 As shown, this application provides a high-purity helium and argon impurity gas detection system for the semiconductor industry, including a pipeline detection point positioning module, a multi-state detection and analysis module, and a gas impurity detection module. The pipeline inspection point positioning module is used to analyze the pipeline for transporting the gas to be detected, and based on the analysis results, obtain multiple environmental inspection points in the pipeline; based on the location of the environmental inspection points, mark the flange inspection location in the pipeline, wherein the gas to be detected is high-purity helium or high-purity argon. The pipeline inspection point location module includes a pipeline inspection point location unit, which is configured with a pipeline inspection point location strategy. The pipeline inspection point location strategy includes: Obtain all the delivery pipes used to transport the detection gas in the semiconductor factory, and label the straight pipes in all the delivery pipes based on the bends and valves in the delivery pipes. The straight pipe is a delivery pipe that is straight and does not contain bends or valves. The longest straight pipe is marked as the first delivery pipe. Two pipe axes are randomly selected from the inner wall of the first delivery pipe, and are denoted as the temperature analysis axis and the pressure analysis axis, respectively. The temperature analysis axis and the pressure analysis axis are parallel to each other. High-temperature resistant clamps were used to fix the temperature-sensing fiber optic and the distributed fiber optic pressure sensor onto the temperature analysis axis and the pressure analysis axis, respectively. In the specific implementation process, for example, during a data analysis, the schematic diagram of the first delivery pipeline is as follows: Figure 2 As shown in GD, the dashed lines WF and YF in GD obtained through analysis are the temperature analysis axis and pressure analysis axis, respectively. Since the high-temperature resistant fixture selected in this embodiment is an electrolytically polished stainless steel welding fixture, the electrolytically polished stainless steel welding fixture can be used to fix the temperature sensing fiber and the distributed fiber pressure sensor at the positions of the dashed lines WF and YF, respectively, so as to detect the temperature distribution and pressure distribution in the first delivery pipe GD.

[0019] The pipeline inspection point location strategy also includes: when the semiconductor factory is in operation, acquiring sensing data from the temperature-sensing fiber optic cable and the distributed fiber optic pressure sensor every tmin until the semiconductor factory's operation ends; the sensing data obtained from the temperature-sensing fiber optic cable is recorded as the pipe temperature data, and the sensing data obtained from the distributed fiber optic pressure sensor is recorded as the pipe pressure data. Both the pipe temperature data and the pipe pressure data contain multiple sets of sensing data, and the time interval between adjacent sets of sensing data is tmin. In the specific implementation process, t can be set according to the operating time of the semiconductor factory. For example, if the pipeline used to transport helium and argon in the semiconductor factory is generally transported once every 30 minutes, then the value of t can be set to 30, so as to obtain the temperature distribution data and pressure distribution data in the first transport pipeline every 30 minutes, that is, the pipe temperature data and pipe pressure data obtained in this embodiment. Using the feature data analysis method, the pipe temperature data and pipe pressure data are analyzed separately. The array of feature distances obtained from the pipe temperature data is recorded as the temperature distance array, and the array of feature distances obtained from the pipe pressure data is recorded as the pressure distance array.

[0020] The feature data analysis method includes: recording the unit corresponding to the detected data in the sensor data as the sensor unit; establishing a Cartesian coordinate system with the unit of the horizontal axis being cm and the unit of the vertical axis being the sensor unit, and recording it as the feature analysis coordinate system; For any set of sensor data, based on the distance between the sensor point and the air inlet in the sensor data, and the data value obtained from the sensor point, the curve corresponding to the sensor data is obtained in the feature analysis coordinate system and recorded as the sensor feature curve. In this embodiment, for example, if the semiconductor factory's operating time is 5 hours and the length of the first conveying pipe is 90 cm during a single data acquisition, then, assuming t is 30, by acquiring temperature-corresponding sensing data every 30 minutes after the semiconductor factory starts operating, the obtained pipe temperature data contains 10 sets of sensing data. Therefore, in the feature analysis coordinate system with the vertical axis in °C, 10 sensing feature curves should be obtained, specifically as follows: Figure 3 TQ1 to TQ10 in the range; Within the same feature analysis coordinate system, obtain the sensing feature curves of all groups of sensing data, and record the intersection of all sensing feature curves as curve intersection points; for any curve intersection point, record the number of sensing feature curves that intersect at the curve intersection point as the intersection value of the curve intersection point. In this embodiment, by analyzing TQ1 to TQ10, we obtain... Figure 3Within the feature analysis coordinate system, the number of intersecting sensor feature curves at x-coordinates 44, 56, and 57 is the largest, and the number of intersecting sensor feature curves is 4 in each case. Therefore, points TJ1, TJ2, and TJ3 can be recorded as feature intersection points, and 44cm, 56cm, and 57cm can be recorded as feature distances of the pipe temperature data. Thus, the temperature distance array is [44, 56, 57]. In addition, by analyzing the pipe pressure data, the pressure distance array obtained is [44, 56, 70]. The intersection point of the curves with the largest intersection value is recorded as the characteristic intersection point, and the abscissa of all characteristic intersection points is marked as the characteristic distance of the sensing data.

[0021] The pipeline inspection point location strategy also includes: when the intersection of the temperature distance array and the pressure distance array is denoted as the sensor correlation array, and when the number of values ​​in the sensor correlation array is greater than or equal to 2, the values ​​in the sensor correlation array are respectively denoted as L1 to L... n And within the first delivery pipe, the distances from the air inlet are L1 to L... n All points are recorded as environmental monitoring points; In this embodiment, the sensor correlation data can be obtained from the temperature distance data and pressure distance array obtained above. The sensor correlation data is [44, 56]. Since the number of values ​​in the sensor correlation array is 2, L1 to L2 are 44 and 56 respectively. The points in the first delivery pipe that are 44cm and 56cm away from the air inlet should be recorded as environmental detection points. When the number of values ​​in the sensor association array is less than 2, obtain the minimum association value for each value in the temperature distance array, and based on the minimum association value in ascending order, record all values ​​in the temperature distance array as B1 to B1. r Where r is the number of values ​​in the temperature distance array. For any value A in the temperature distance array: obtain the absolute value of the difference between A and all values ​​in the pressure distance array, and record the minimum value among all absolute values ​​as the minimum correlation value of A; mark the points in the first delivery pipeline that are at distances B1 and B2 from the air inlet as environmental detection points. In this embodiment, the number of environmental monitoring points obtained from the above analysis should be greater than or equal to 2 to ensure that the flange detection position is at the midpoint of the line segment where all environmental monitoring points are located. The purpose is to ensure that after the flange detection unit is placed at the flange detection position, the temperature data obtained through the environmental monitoring points can be combined with the flange detection unit. This avoids the environmental monitoring points and the flange detection unit being too far apart in position, which would prevent the absorption spectrum detected by the flange detection unit from being fully combined with the temperature and pressure obtained from the environmental monitoring points, and thus prevent accurate concentration correction when correcting the detection concentration in the future. Obtain the environmental monitoring points that are farthest and closest to the air inlet from all environmental monitoring points, and record them as the farthest point and the closest point, respectively. Record the midpoint between the farthest point and the closest point as the flange monitoring location. In this embodiment, the farthest point and the nearest point are obtained from the environmental detection points obtained above. These points correspond to the values ​​44 and 56 in the sensor correlation data, respectively. Therefore, the midpoint of the connection between the environmental detection points corresponding to 44 and 56 should be recorded as the flange detection position, which is the position 50cm away from the air inlet in the first delivery pipeline.

[0022] The multi-state detection and analysis module is used to analyze pipelines under various temperatures and pressures using flange-type detection units, and obtains the combination of environmental detection points corresponding to each temperature and pressure, as well as the characteristic difference of the components corresponding to each combination based on the analysis results. The multi-state detection and analysis module includes a multi-state detection and analysis unit, which is configured with multi-state detection and analysis strategies. These strategies include: The distance between the flange inspection location and the air inlet is denoted as L; environmental inspection points with a distance less than L from the air inlet are denoted as near inspection points, and environmental inspection points with a distance greater than L from the air inlet are denoted as far inspection points. For any near detection point α1 and far detection point α2: the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 in the sensing characteristic curve corresponding to the pipe temperature data is recorded as the average characteristic temperature; the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 in the sensing characteristic curve corresponding to the pipe pressure data is recorded as the average characteristic pressure. In the analysis of this embodiment, for example, the positions of the near detection point α1 and the far detection point α2 obtained through the above analysis are as follows: Figure 2 Points α1 and α2 are identified. By acquiring the sensor characteristic curves corresponding to the analysis data inside the pipe, the ordinates of the intersection points of the curves corresponding to α1 and α2 are found to be 28℃ and 34℃, respectively. Therefore, the average characteristic temperature corresponding to α1 and α2 is 31℃. Since the temperatures of the near detection point α1 and the far detection point α2 in the delivery pipeline are relatively stable, typically stable at 28℃ and 34℃, by acquiring the average characteristic temperature, the average temperature corresponding to the delivery pipeline when the near detection point α1 and the far detection point α2 are used as environmental detection points can be obtained. This allows the characteristic difference values ​​corresponding to α1 and α2 obtained later to correct the detection concentration of each component when the temperature inside the delivery pipeline is the average characteristic temperature corresponding to α1 and α2, thereby improving the accuracy of the corrected concentration.

[0023] The multi-state detection and analysis strategy also includes: based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. When the temperature and pressure in the first delivery pipeline are the average characteristic temperature and average characteristic pressure, respectively, a detection gas with controllable concentration is input into the first delivery pipeline through the inlet. Based on the tunable diode laser absorption spectrum obtained by the flange detection unit, the concentration of components other than the main gas in the detection gas is obtained. The detection gas with controllable concentration is the detection gas in which the concentration of all components other than the main gas has been obtained. The main gases in high-purity helium and high-purity argon are helium and argon, respectively. In the specific implementation process, the method of obtaining the tunable diode laser absorption spectrum and the concentration of impurity gas by the flange-type detection unit can be adjusted according to the structure of the first delivery pipeline and the obtained absorption spectrum during actual operation. In the method of this embodiment, the concentrations of O2 and H2O in the first delivery pipeline are determined by obtaining the characteristic absorption peaks of impurity gas in the tunable diode laser absorption spectrum, such as the ordinate of the absorption peak of O2 at 760nm and the ordinate of the absorption peak of H2O at 1392nm. For any component β in the detection gas other than the main gas: the concentration of component β in the detection gas before it is input into the first delivery pipe is recorded as the actual concentration, the concentration of component β obtained by the tunable diode laser absorption spectrum is recorded as the spectral concentration, and the difference between the actual concentration and the spectral concentration is recorded as the characteristic difference of component β. In this embodiment, for example, under the combination of near detection point α1 and far detection point α2, one component being analyzed is O2. Before the detection gas is input into the first delivery pipe, the concentration of O2 in the detection gas is 0.4 ppm, while the concentration of O2 obtained from the tunable diode laser absorption spectrum is 0.38 ppm. By calculation, the characteristic difference of O2 under the combination of near detection point α1 and far detection point α2 is 0.02 ppm.

[0024] Multi-state detection and analysis strategies also include: Obtain the characteristic differences of all components in the detected gas other than the main gas; Obtain all combinations of near and far detection points, and obtain the characteristic differences of all components in the detection gas except the main gas for each combination.

[0025] The gas impurity detection module is used to obtain the characteristic difference value of the corresponding component based on the temperature and pressure inside the delivery pipeline when the detection gas is introduced into the delivery pipeline. After the absorption spectrum is obtained by the flange-type detection unit, the characteristic difference value is used to correct the concentration of the component obtained from the absorption spectrum.

[0026] The gas impurity detection module includes a gas impurity detection unit, which is configured with a gas impurity detection strategy. The gas impurity detection strategy includes: When the detection gas is introduced into the delivery pipeline, the temperature and pressure in the first delivery pipeline are acquired in real time and recorded as real-time temperature and real-time pressure. The difference between the average characteristic temperature and the real-time temperature corresponding to each combination of near detection point and far detection point is acquired respectively. Based on the absolute value of the difference, the temperature influence level of all combinations is recorded as 1 to p in order from small to large, where p is the number of combinations of near detection point and far detection point. The difference between the average characteristic pressure and the real-time pressure corresponding to each combination of near and far detection points is obtained, and the pressure influence level of all combinations is recorded as 1 to p in order of increasing absolute value of the difference.

[0027] The gas impurity detection strategy also includes: the combination of the near detection point and the far detection point with the smallest sum of temperature influence level and pressure influence level is denoted as the first detection combination; In specific implementation, such as in the real-time analysis of this embodiment, the first detection combination obtained is the near detection point α1 and the far detection point α2. Therefore, when correcting the concentration of component O2, if the concentration of O2 obtained from the tunable diode laser absorption spectrum is 0.38 ppm, since the characteristic difference of O2 under the combination of near detection point α1 and far detection point α2 is 0.02 ppm, 0.38 ppm and 0.02 ppm can be added together to obtain 0.4 ppm. 0.4 ppm is then used as the actual concentration of O2 after correction. In real-time analysis, the real-time temperature and real-time gas pressure in the pipeline are fully combined to correct the detection concentration of component O2 in the impurity gas. Based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. The concentration of components other than the main gas in the detection gas is obtained from the tunable diode laser absorption spectrum obtained by the flange detection unit and recorded as the real-time concentration of the components. For any component β: the sum of the feature difference of component β corresponding to the first detection combination and the real-time concentration of component β is denoted as the real-time detection concentration of component β; Obtain the real-time detection concentration of all components in the gas being detected.

[0028] Working principle: First, the pipeline for transmitting the gas to be detected is analyzed, and based on the analysis results, multiple environmental monitoring points in the pipeline are obtained. Based on the location of the environmental monitoring points, flange detection positions are marked in the pipeline. Then, the flange-type detection unit is used to analyze the pipeline under various temperatures and pressures, and based on the analysis results, the combination of environmental monitoring points corresponding to each temperature and pressure, as well as the characteristic difference value of the components corresponding to each combination, are obtained. Finally, based on the temperature and pressure inside the pipeline when the gas to be detected is introduced, the characteristic difference value of the corresponding components is obtained, and after the absorption spectrum is obtained by the flange-type detection unit, the concentration of the components obtained from the absorption spectrum is corrected using the characteristic difference value.

[0029] Based on the above description of the embodiments, the embodiments of the present invention can be provided as methods, systems, or computer program products. Based on this understanding, the above technical solutions, in essence or in terms of their contribution to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or certain parts of the embodiments.

[0030] In the embodiments provided in this application, it should be understood that the disclosed system or method can be implemented in other ways. The embodiments described above are merely illustrative. For example, the division of modules or units is only a logical functional division, and there may be other division methods in actual implementation. Furthermore, multiple modules or units may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the coupling or direct coupling or communication connection shown or discussed may be through some communication interfaces. The indirect coupling or communication connection between systems, modules, and units may be electrical, mechanical, or other forms.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A system for detecting impurity gases in high-purity helium and argon gas used in the semiconductor industry, characterized in that, It includes a pipeline inspection point positioning module, a multi-state detection and analysis module, and a gas impurity detection module; The pipeline inspection point positioning module is used to analyze the pipeline for transporting the gas to be detected, and based on the analysis results, obtain multiple environmental inspection points in the pipeline; based on the location of the environmental inspection points, mark the flange inspection location in the pipeline, wherein the gas to be detected is high-purity helium or high-purity argon. The multi-state detection and analysis module is used to analyze pipelines under various temperatures and pressures using flange-type detection units, and obtains the combination of environmental detection points corresponding to each temperature and pressure, as well as the characteristic difference of the components corresponding to each combination based on the analysis results. The gas impurity detection module is used to obtain the characteristic difference value of the corresponding component based on the temperature and pressure inside the delivery pipeline when the detection gas is introduced into the delivery pipeline. After the absorption spectrum is obtained by the flange-type detection unit, the characteristic difference value is used to correct the concentration of the component obtained from the absorption spectrum.

2. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 1, characterized in that, The pipeline inspection point location module includes a pipeline inspection point location unit, which is configured with a pipeline inspection point location strategy. The pipeline inspection point location strategy includes: Obtain all the delivery pipes used to transport the detection gas in the semiconductor factory, and label the straight pipes in all the delivery pipes based on the bends and valves in the delivery pipes. The straight pipe is a delivery pipe that is straight and does not contain bends or valves. The longest straight pipe is marked as the first delivery pipe. Two pipe axes are randomly selected from the inner wall of the first delivery pipe, and are denoted as the temperature analysis axis and the pressure analysis axis, respectively. The temperature analysis axis and the pressure analysis axis are parallel to each other. High-temperature resistant clamps were used to fix the temperature-sensing optical fiber and the distributed optical fiber pressure sensor onto the temperature analysis axis and the pressure analysis axis, respectively.

3. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 2, characterized in that, Pipeline inspection point location strategies also include: When the semiconductor factory is in operation, sensing data from the temperature-sensing fiber and the distributed fiber optic pressure sensor are acquired every tmin until the semiconductor factory ends operation. The sensing data obtained from the temperature-sensing fiber is recorded as the pipe temperature data, and the sensing data obtained from the distributed fiber optic pressure sensor is recorded as the pipe pressure data. Both the pipe temperature data and the pipe pressure data contain multiple sets of sensing data, and the time interval between adjacent sets of sensing data is tmin. Using the feature data analysis method, the pipe temperature data and pipe pressure data are analyzed separately. The array of feature distances obtained from the pipe temperature data is recorded as the temperature distance array, and the array of feature distances obtained from the pipe pressure data is recorded as the pressure distance array.

4. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 3, characterized in that, Feature data analysis methods include: The unit corresponding to the detected data in the sensing data is denoted as the sensing unit; a Cartesian coordinate system is established with the unit of the horizontal axis being cm and the unit of the vertical axis being the sensing unit, and this system is denoted as the feature analysis coordinate system. For any set of sensor data, based on the distance between the sensor point and the air inlet in the sensor data, and the data value obtained from the sensor point, the curve corresponding to the sensor data is obtained in the feature analysis coordinate system and recorded as the sensor feature curve. Within the same feature analysis coordinate system, obtain the sensing feature curves of all groups of sensing data, and record the intersection of all sensing feature curves as curve intersection points; for any curve intersection point, record the number of sensing feature curves that intersect at the curve intersection point as the intersection value of the curve intersection point. The intersection point of the curves with the largest intersection value is recorded as the characteristic intersection point, and the abscissa of all characteristic intersection points is marked as the characteristic distance of the sensing data.

5. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 4, characterized in that, Pipeline inspection point location strategies also include: The intersection of the temperature distance array and the pressure distance array is denoted as the sensor correlation array. When the number of values ​​in the sensor correlation array is greater than or equal to 2, the values ​​in the sensor correlation array are denoted as L1 to L... n And within the first delivery pipe, the distances from the air inlet are L1 to L... n All points are recorded as environmental monitoring points; When the number of values ​​in the sensor association array is less than 2, obtain the minimum association value for each value in the temperature distance array, and based on the minimum association value in ascending order, record all values ​​in the temperature distance array as B1 to B1. r Where r is the number of values ​​in the temperature distance array. For any value A in the temperature distance array: obtain the absolute value of the difference between A and all values ​​in the pressure distance array, and record the minimum value among all absolute values ​​as the minimum correlation value of A; mark the points in the first delivery pipeline that are at distances B1 and B2 from the air inlet as environmental detection points. Obtain the environmental monitoring points that are farthest and closest to the air inlet from all environmental monitoring points, and record them as the farthest point and the closest point, respectively. Record the midpoint between the farthest point and the closest point as the flange monitoring location.

6. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 5, characterized in that, The multi-state detection and analysis module includes a multi-state detection and analysis unit, which is configured with multi-state detection and analysis strategies. These strategies include: The distance between the flange inspection location and the air inlet is denoted as L; environmental inspection points with a distance less than L from the air inlet are denoted as near inspection points, and environmental inspection points with a distance greater than L from the air inlet are denoted as far inspection points. For any near detection point α1 and far detection point α2: the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 on the sensing characteristic curve corresponding to the pipe temperature data is recorded as the average characteristic temperature; the average value of the ordinates of the points corresponding to the near detection point α1 and the far detection point α2 on the sensing characteristic curve corresponding to the pipe pressure data is recorded as the average characteristic pressure.

7. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 6, characterized in that, Multi-state detection and analysis strategies also include: Based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. When the temperature and pressure in the first delivery pipeline are the average characteristic temperature and average characteristic pressure, respectively, a controllable concentration detection gas is input into the first delivery pipeline through the inlet. Based on the tunable diode laser absorption spectrum obtained by the flange detection unit, the concentration of components other than the main gas in the detection gas is obtained. The controllable concentration detection gas is the detection gas in which the concentration of all components other than the main gas has been obtained. The main gases in high-purity helium and high-purity argon are helium and argon, respectively. For any component β in the detection gas other than the main gas: the concentration of component β in the detection gas before it is input into the first delivery pipe is recorded as the actual concentration, the concentration of component β obtained by the tunable diode laser absorption spectrum is recorded as the spectral concentration, and the difference between the actual concentration and the spectral concentration is recorded as the characteristic difference of component β.

8. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 7, characterized in that, Multi-state detection and analysis strategies also include: Obtain the characteristic differences of all components in the detected gas other than the main gas; Obtain all combinations of near and far detection points, and obtain the characteristic differences of all components in the detection gas except the main gas for each combination.

9. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 8, characterized in that, The gas impurity detection module includes a gas impurity detection unit, which is configured with a gas impurity detection strategy. The gas impurity detection strategy includes: When the detection gas is introduced into the delivery pipeline, the temperature and pressure in the first delivery pipeline are acquired in real time and recorded as real-time temperature and real-time pressure. The difference between the average characteristic temperature and the real-time temperature corresponding to each combination of near detection point and far detection point is acquired respectively. Based on the absolute value of the difference, the temperature influence level of all combinations is recorded as 1 to p in order from small to large, where p is the number of combinations of near detection point and far detection point. The difference between the average characteristic pressure and the real-time pressure corresponding to each combination of near and far detection points is obtained, and the pressure influence level of all combinations is recorded as 1 to p in order of increasing absolute value of the difference.

10. The high-purity helium and argon impurity gas detection system for the semiconductor industry according to claim 9, characterized in that, Gas impurity detection strategies also include: The combination of the near and far detection points that minimizes the sum of the temperature and pressure influence levels is designated as the first detection combination. Based on the acquisition method of tunable diode laser absorption spectrum, a flange detection unit is placed at the flange detection position. The concentration of components other than the main gas in the detection gas is obtained from the tunable diode laser absorption spectrum obtained by the flange detection unit and recorded as the real-time concentration of the components. For any component β: the sum of the characteristic difference of component β corresponding to the first detection combination and the real-time concentration of component β is recorded as the real-time detection concentration of component β; obtain the real-time detection concentration of all components in the detection gas.

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