Resistance determination method and device, storage medium, electronic equipment and program product
By combining current characteristics and resistance measurements, a test method is employed to accurately extract the contact and area resistance of semiconductor devices, solving the problem of accurately extracting the on-resistance Ron and improving the accuracy of device calibration.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-16
- Publication Date
- 2026-04-17
AI Technical Summary
In the existing technology, it is difficult to accurately extract the on-resistance Ron of semiconductor devices, which affects the accuracy of device calibration.
By determining the contact resistance and area resistance of the target device based on its current characteristics and multiple resistance measurements, the total resistance value can be accurately extracted using a single testing method, reducing the complexity of the extraction process.
It enables rapid and accurate extraction of the resistance value of the target device, reduces the complexity of resistance extraction, and improves the accuracy of device calibration.
Smart Images
Figure CN121878403A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a method, apparatus, storage medium, electronic device, and program product for determining resistance. Background Technology
[0002] Semiconductor process and device TCAD (Technology Computer Aided Design) simulation is one of the important methods used in device development. TCAD simulation results can predict the future characteristics of devices, and the accuracy of the prediction is affected by the precision of device calibration. On-resistance Ron is an important parameter characterizing the amplification capability of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and the accurate extraction of the resistance values of each part of Ron is crucial to the accuracy of device calibration. Summary of the Invention
[0003] The purpose of this disclosure is to provide a method, apparatus, storage medium, electronic device, and program product for determining resistance, for quickly and accurately extracting the resistance value of a target device.
[0004] According to a first aspect of the present disclosure, a method for determining resistance is provided, the method comprising: Based on the current characteristics of the target device, a first resistance value of the target device is determined, wherein the first resistance value includes the sum of the contact resistance and the area resistance of the target device. A second resistance value of the target device is determined based on multiple resistance measurement combinations of the target device. The resistance measurement combinations include at least one of the source voltage, gate voltage, and drain voltage of the target device, and the voltage values of the source voltage, gate voltage, and drain voltage of the target device are different in different resistance measurement combinations. The second resistance value includes the contact resistance of the target device. The target resistance value of the target device is determined based on the first resistance value and the second resistance value, wherein the target resistance value includes the resistance value of the area resistance of the target device.
[0005] Optionally, determining the first resistance value of the target device based on its current characteristics includes: Based on the current characteristics, a plurality of third resistance values and a first voltage value corresponding to each third resistance value are obtained. The third resistance value includes the total resistance of the target device, and the first voltage value includes the voltage between the source and the gate of the target device. Based on the plurality of third resistance values and the plurality of first voltage values, a first correspondence is obtained between the logarithm of the total resistance of the target device and the reciprocal of the specified voltage, wherein the specified voltage includes the difference between the voltage between the source and gate of the target device and the threshold voltage of the target device; The first resistance value is determined based on the first correspondence.
[0006] Optionally, determining the second resistance value of the target device based on multiple resistance measurement combinations of the target device includes: Obtain the target voltage value and target current value corresponding to each resistance measurement combination. The target voltage value includes one of the voltage values of the source voltage, gate voltage and drain voltage of the multiple target devices. The target current value includes one of the current values of the source current, gate current and drain current of the multiple target devices. The second resistance value is determined based on the target voltage value and the target current value corresponding to each resistance measurement combination.
[0007] Optionally, obtaining the target voltage and target current values corresponding to each resistance measurement combination includes: For each of the resistance measurement combinations, at least one target electrode is determined from the source, gate, and drain of the plurality of target devices; Apply a corresponding preset voltage to each of the target electrodes; Obtain the voltage value corresponding to the first designated electrode as the target voltage value; Obtain the current value corresponding to the second designated electrode as the target current value.
[0008] Optionally, determining the second resistance value based on the target voltage value and the target current value corresponding to each resistance measurement combination includes: For each resistance measurement combination, a second correspondence is determined based on the target voltage value and the target current value; The second resistance value is determined according to each of the second correspondences.
[0009] Optionally, the plurality of target devices includes a first target device and a second target device, and the resistance measurement combination includes a first measurement combination, a second measurement combination, and a third measurement combination; the target electrodes corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain, gate, and source of the first target device, and the gate and source of the second target device; the target voltage values corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain voltage value of the second target device, the target current value corresponding to the first measurement combination includes the source current value of the first target device, the target current value corresponding to the second measurement combination includes the source current value of the second target device, and the target current value corresponding to the third measurement combination includes the drain current value of the first target device.
[0010] Optionally, the second correspondence represents the correspondence between the contact resistance, the first target resistance, and the second target resistance, wherein the first target resistance includes the total resistance when the first target device is turned on, and the second target resistance includes the total resistance when the second target device is turned on.
[0011] According to a second aspect of the present disclosure, a resistance determining apparatus is provided, the apparatus comprising: The first determining module is configured to determine a first resistance value of the target device based on the current characteristics of the target device, wherein the first resistance value includes the sum of the contact resistance and the area resistance of the target device. The second determining module is configured to determine a second resistance value of the target device based on multiple resistance measurement combinations of the target device, wherein the resistance measurement combinations include a combination of at least one of the source voltage, gate voltage, and drain voltage of the target device, and the voltage values of the source voltage, gate voltage, and drain voltage of the target device are different in different resistance measurement combinations; the second resistance value includes the resistance value of the contact resistance of the target device; The third determining module is configured to determine the target resistance value of the target device based on the first resistance value and the second resistance value, wherein the target resistance value includes the resistance value of the area resistance of the target device.
[0012] Optionally, the first determining module is configured to: Based on the current characteristics, a plurality of third resistance values and a first voltage value corresponding to each third resistance value are obtained. The third resistance value includes the total resistance of the target device, and the first voltage value includes the voltage between the source and the gate of the target device. Based on the plurality of third resistance values and the plurality of first voltage values, a first correspondence between the logarithm of the total resistance of the target device and the reciprocal of a specified voltage is obtained by fitting, wherein the specified voltage includes the difference between the voltage between the source and gate of the target device and the threshold voltage of the target device; The first resistance value is determined based on the first correspondence.
[0013] Optionally, the second determining module is configured to: Obtain the target voltage value and target current value corresponding to each resistance measurement combination. The target voltage value includes one of the voltage values of the source voltage, gate voltage and drain voltage of the multiple target devices. The target current value includes one of the current values of the source current, gate current and drain current of the multiple target devices. The second resistance value is determined based on the target voltage value and the target current value corresponding to each resistance measurement combination.
[0014] Optionally, the second determining module is configured to: For each of the resistance measurement combinations, at least one target electrode is determined from the source, gate, and drain of the plurality of target devices; Apply a corresponding preset voltage to each of the target electrodes; Obtain the voltage value corresponding to the first designated electrode as the target voltage value; Obtain the current value corresponding to the second designated electrode as the target current value.
[0015] Optionally, the second determining module is configured to: For each resistance measurement combination, a second correspondence is determined based on the target voltage value and the target current value; The second resistance value is determined according to each of the second correspondences.
[0016] Optionally, the plurality of target devices includes a first target device and a second target device, and the resistance measurement combination includes a first measurement combination, a second measurement combination, and a third measurement combination; the target electrodes corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain, gate, and source of the first target device, and the gate and source of the second target device; the target voltage values corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain voltage value of the second target device, the target current value corresponding to the first measurement combination includes the source current value of the first target device, the target current value corresponding to the second measurement combination includes the source current value of the second target device, and the target current value corresponding to the third measurement combination includes the drain current value of the first target device.
[0017] Optionally, the second correspondence represents the correspondence between the contact resistance, the first target resistance, and the second target resistance, wherein the first target resistance includes the total resistance when the first target device is turned on, and the second target resistance includes the total resistance when the second target device is turned on.
[0018] According to a third aspect of the present disclosure, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps of the method described in the first aspect of the present disclosure.
[0019] According to a fourth aspect of the present disclosure, an electronic device is provided, comprising: A memory on which computer programs are stored; A processor is configured to execute the computer program in the memory to implement the steps of the method described in the first aspect of the present disclosure.
[0020] According to a fifth aspect of the present disclosure, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps of the method described in the first aspect of the present disclosure.
[0021] Through the above technical solution, this disclosure first determines the first resistance value of the target device based on its current characteristics, and then determines the second resistance value of the target device based on multiple resistance measurement combinations. The resistance measurement combinations include at least one combination of the source voltage, gate voltage, and drain voltage of multiple target devices, with different voltage values for the source, gate, and drain voltages in different resistance measurement combinations. Then, the target resistance value of the target device is determined based on the first and second resistance values. The first resistance value may include the sum of the contact resistance and the area resistance of the target device, the second resistance value may include the contact resistance of the target device, and the target resistance value includes the area resistance of the target device. This disclosure can accurately extract the total resistance value of the contact resistance and the area resistance based on the current characteristics of the target device, and eliminates the need to design multiple test methods. Based on multiple resistance measurement combinations, only one test method is needed to extract the contact resistance value, thereby enabling rapid and accurate acquisition of the area resistance value of the target device and reducing the complexity of extracting the resistance of the target device.
[0022] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0023] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic diagram illustrating an example of device calibration.
[0024] Figure 2 This is a schematic diagram of a device calibration process.
[0025] Figure 3 This is a flowchart illustrating a method for determining resistance according to an exemplary embodiment.
[0026] Figure 4 This is a flowchart illustrating another method for determining resistance according to an exemplary embodiment.
[0027] Figure 5 It is based on Figure 4 An example illustration shows a schematic diagram of current characteristics Ids~Vgs.
[0028] Figure 6 It is based on Figure 4 An embodiment illustrates a schematic diagram of a first correspondence.
[0029] Figure 7 This is a flowchart illustrating another method for determining resistance according to an exemplary embodiment.
[0030] Figure 8 It is based on Figure 7 A schematic diagram of a target device is shown in the embodiment.
[0031] Figure 9 This is a block diagram illustrating a resistor determining device according to an exemplary embodiment.
[0032] Figure 10 This is a block diagram illustrating an electronic device according to an exemplary embodiment. Detailed Implementation
[0033] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0034] Before introducing the method, apparatus, storage medium, electronic device and program product for determining resistance shown in the embodiments of this disclosure, the application scenarios of the embodiments of this disclosure will be introduced first.
[0035] Semiconductor process and device TCAD (Technology Computer Aided Design) simulation is one of the important methods used in device development. TCAD simulation results can predict the future characteristics of devices, and the accuracy of the prediction depends on the following four main aspects: (1) complete process flow; (2) various ion implantation conditions, including implant conditions, thermal budget, screen oxide, etc.; (3) layer thickness and cross-sectional TEM (Transmission Electron Microscopy) data; (4) device calibration. Among them, device calibration includes both conventional electrical target calibration, such as individual indicators such as Vth, Idlin, Idsat, Ioff, etc., and data curve calibration, such as Cgg~Vgs, Ids~Vgs curves.
[0036] Figure 1 This is a schematic diagram illustrating an example of device calibration, in which... Figure 1 (a) in the diagram is a schematic diagram of electrical parameter calibration. Figure 1 Figures (b) and (c) illustrate the data curve calibration. Device calibration follows the sequence of first CV (Cgg~Vgs) curve calibration and then IV (Ids~Vgs) curve calibration, and first long channel calibration and then short channel calibration. The specific process is as follows: Figure 2 As shown.
[0037] The on-resistance Ron is a crucial parameter characterizing the amplification capability of a MOSFET. It illustrates the impact of the drain-source voltage Vds on the drain current Id and is the reciprocal of the slope of the tangent line at a certain point in the drain characteristic. Accurate extraction of the various components of the on-resistance Ron is critical to accurate device calibration. Ron mainly consists of three parts: Rcnt, Rsd, and Rch. Rcnt refers to the contact resistance between the source and drain of the MOSFET, Rsd refers to the area resistance between the source and drain, and Rch refers to the channel resistance of the MOSFET. Rext is defined as Rcnt + Rsd.
[0038] This disclosure proposes a method for accurately extracting Rcnt and Rsd. First, Rext and Rcnt are extracted, and then Rsd (=Rext-Rcnt) is obtained. This method can accurately extract the total resistance value of the contact resistance and the area resistance based on the current characteristics of the target device. Furthermore, it eliminates the need to design multiple test methods. Based on multiple resistance measurement combinations, only one test method is required to extract the contact resistance value. This allows for the rapid and accurate acquisition of the area resistance value of the target device, reducing the complexity of extracting the resistance of the target device.
[0039] Figure 3 This is a flowchart illustrating a method for determining resistance according to an exemplary embodiment, such as... Figure 3 As shown, the method includes: Step S101: Determine the first resistance value of the target device based on its current characteristics.
[0040] The first resistance value may include the sum of the contact resistance and the area resistance of the source or drain of the target device, that is, the first resistance value may be the value of Rext.
[0041] For example, the target device in the embodiments of this disclosure can be any silicon-based MOS transistor, including enhancement-mode N-channel MOS transistors and P-channel MOS transistors, as well as depletion-mode N-channel MOS transistors and P-channel MOS transistors, etc.
[0042] In some embodiments, the current characteristics of the target current may include Ids~Vgs (source-drain current~gate-source voltage). First, the total resistance values of the target device under different gate-source voltages can be obtained based on Ids~Vgs, where the total resistance value is the slope value of the Ids~Vgs characteristic curve. Then, a first correspondence relationship can be obtained by fitting multiple gate-source voltage values and corresponding total resistance values. The first correspondence relationship can be Log(Rtotal) vs 1 / Vgt, or it can be Rtotal vs 1 / Vgt. Rtotal is the total resistance, and Vgt is the difference between the source-gate voltage Vgs and the threshold voltage Vt of the target device. The expression for the first correspondence relationship can be determined based on the characteristics of different target devices, and this disclosure does not specifically limit it.
[0043] In other embodiments, when the first correspondence is Log(Rtotal) vs 1 / Vgt, the Log(Rtotal) value corresponding to the intersection of the image of Log(Rtotal) vs 1 / Vgt in the coordinate system and the Y-axis can be used as the first resistance value. When the first correspondence is Rtotal vs 1 / Vgt, the Rtotal value corresponding to the intersection of the image of Rtotal vs 1 / Vgt in the coordinate system and the Y-axis can be used as the first resistance value.
[0044] Step S102: Determine the second resistance value of the target device based on multiple resistance measurement combinations of the target device.
[0045] The resistance measurement combination can include a combination of at least one of the source voltage, gate voltage, and drain voltage of multiple target devices, and the voltage values of the source voltage, gate voltage, and drain voltage of the multiple target devices are different in different resistance measurement combinations. The second resistance value can include the contact resistance of the source or drain of the target device, that is, the second resistance value can be the value of Rcnt.
[0046] In some embodiments, for each resistance measurement combination, at least one target electrode can be determined from the source, gate, and drain of a plurality of target devices, and a corresponding preset voltage is applied to each target electrode. Then, the voltage value corresponding to the first designated electrode is obtained as the target voltage value, and the current value corresponding to the second designated electrode is obtained as the target current value. The target electrodes corresponding to each resistance measurement combination may be the same or different, the preset voltage values applied to each target electrode corresponding to each resistance measurement combination may be the same or different, and the first designated electrode may be the same or different.
[0047] In other embodiments, for each resistance measurement combination, a second correspondence can be determined based on the target voltage value and the target current value, and a second resistance value can be determined based on each second correspondence. The second correspondence can include the correspondence between the resistances of different parts of multiple target devices. Taking multiple target devices including a first target device and a second target device as an example, the second correspondence can characterize the correspondence between contact resistance, the total resistance when the first target device is turned on, and the total resistance when the second target device is turned on.
[0048] In other embodiments, the second resistance value can be obtained based on multiple second correspondences corresponding to multiple resistance measurement combinations. For example, the second resistance value can be obtained by solving a system of equations corresponding to multiple second correspondences.
[0049] In this way, there is no need to design multiple test structures (TestKeys). Only one TestKey test method can be designed to quickly and accurately determine the second resistance value of the target device based on multiple resistance measurement combinations, thus reducing the complexity of determining the resistance of the target device.
[0050] Step S103: Determine the target resistance value of the target device based on the first resistance value and the second resistance value.
[0051] For example, the target resistance value can include the region resistance of the source or drain of the target device; that is, the target resistance value can be Rsd. The target resistance value can also be the difference between a first resistance value and a second resistance value, for example, it can be calculated using Formula 1: Rsd = Rext - Rcnt (Formula 1) In summary, this disclosure first determines a first resistance value of the target device based on its current characteristics, and then determines a second resistance value based on multiple resistance measurement combinations of the target device. These resistance measurement combinations include at least one of the source voltage, gate voltage, and drain voltage of the target device, with different voltage values for each combination. Then, a target resistance value is determined based on the first and second resistance values. The first resistance value may include the sum of the contact resistance and the area resistance of the target device, the second resistance value may include the contact resistance, and the target resistance value includes the area resistance. This disclosure can accurately extract the total resistance value of the contact resistance and area resistance based on the current characteristics of the target device, and eliminates the need for multiple test methods. Based on multiple resistance measurement combinations, only one test method is required to extract the contact resistance value, thus enabling rapid and accurate acquisition of the area resistance value of the target device and reducing the complexity of extracting the target device's resistance.
[0052] Figure 4 This is a flowchart illustrating another method for determining resistance according to an exemplary embodiment, such as... Figure 4 As shown, step S101 can be achieved through the following steps: Step S1011: Based on the current characteristics, obtain multiple third resistance values and the first voltage value corresponding to each third resistance value.
[0053] Example, Figure 5 This is a schematic diagram of current characteristics Ids~Vgs. Based on the current characteristics Ids~Vgs of the target device, multiple third resistance values and a first voltage value corresponding to each third resistance value can be obtained. The third resistance value can include the total resistance of the target device, and the first voltage value can include the voltage between the source and gate of the target device, i.e., Vgs.
[0054] Step S1012: Based on multiple third resistance values and multiple first voltage values, fit the first correspondence between the logarithm of the total resistance of the target device and the reciprocal of the specified voltage.
[0055] For example, a logarithmic (Log) form can be used to fit the first correspondence between the logarithm of the third resistor and the reciprocal of the specified voltage. The first correspondence can be expressed as Log(Rtotal) vs 1 / Vgt, where Rtotal is the total resistance of the target device, the specified voltage includes the difference between the voltage Vgs between the source and gate of the target device and the threshold voltage Vt of the target device, and the specified voltage Vgt can be expressed by Equation 2 for example.
[0056] Vgt = Vgs - Vt (Formula 2) Figure 6 This is a schematic diagram of the first correspondence, where the solid line is the fitted image of Rtotal vs 1 / Vgt, and the dashed line is the fitted image of Log(Rtotal) vs 1 / Vgt. A large number of experimental data show that the fitted image of Log(Rtotal) vs 1 / Vgt has higher accuracy, and therefore can obtain the first resistance value more accurately.
[0057] Step S1013: Determine the first resistance value according to the first correspondence relationship.
[0058] For example, as can be seen from Formula 3, the total resistance value corresponding to the intersection of the graph of the first correspondence in the coordinate system and the Y-axis is the first resistance value, that is, the value of Rext.
[0059] (Formula 3) Where Vds is the drain-source voltage of the target device, Idlin is the drain current measured when the target device is operating in the linear region, u is the carrier mobility of the target device, Cox is the gate insulator capacitance per unit area, W is the channel width of the target device, and L is the channel length of the target device.
[0060] Figure 7 This is a flowchart illustrating another method for determining resistance according to an exemplary embodiment, such as... Figure 7 As shown, step S1021 can be achieved through the following steps: Step S1021: Obtain the target voltage and target current values corresponding to each resistance measurement combination.
[0061] The target voltage value may include one of the voltage values of the source voltage, gate voltage and drain voltage of multiple target devices, and the target current value may include one of the current values of the source current, gate current and drain current of multiple target devices.
[0062] For example, for each resistance measurement combination, at least one target electrode can be identified from the source, gate, and drain of multiple target devices, and a corresponding preset voltage can be applied to each target electrode. Then, the voltage value corresponding to the first designated electrode is obtained as the target voltage value, and the current value corresponding to the second designated electrode is obtained as the target current value.
[0063] In some embodiments, the plurality of target devices may include a first target device and a second target device, and the resistance measurement combination may include a first measurement combination, a second measurement combination, and a third measurement combination. The target electrodes corresponding to the first measurement combination, the second measurement combination, and the third measurement combination may each include the drain, gate, and source of the first target device, and the gate and source of the second target device. The target voltage values corresponding to the first measurement combination, the second measurement combination, and the third measurement combination may each include the drain voltage of the second target device. The target current value corresponding to the first measurement combination may include the source current of the first target device, the target current value corresponding to the second measurement combination may include the source current of the second target device, and the target current value corresponding to the third measurement combination may include the drain current of the first target device.
[0064] Step S1022: Determine the second resistance value based on the target voltage value and target current value corresponding to each resistance measurement combination.
[0065] For example, for each resistance measurement combination, a second correspondence can be determined based on the target voltage and target current values, and a second resistance value can be determined based on each second correspondence. The second correspondence can characterize the relationship between contact resistance, a first target resistance, and a second target resistance. The first target resistance can include the total resistance when the first target device is turned on, and the second target resistance can include the total resistance when the second target device is turned on. This eliminates the need to design multiple TestKey test structures; only one TestKey test structure needs to be designed to quickly and accurately determine the second resistance value of the target device based on multiple resistance measurement combinations, reducing the complexity of determining the resistance of the target device.
[0066] For example, refer to Figure 8The first measurement combination can be as follows: apply a voltage of 0.05V to the drain D1 of the first target device, apply a voltage of 0V to the source S1 of the first target device, apply a voltage of 0.05V to the source S2 of the second target device, connect the gate G1 of the first target device and the gate G2 of the second target device to the power supply Vdd, and then detect the drain voltage D2 of the second target device as the target voltage value Va, and detect the source current of the first target device as the target current value I1. The second measurement combination can be as follows: apply a voltage of 0.05V to the drain D1 of the first target device, apply a voltage of 0.05V to the source S1 of the first target device, apply a voltage of 0V to the source S2 of the second target device, connect the gate G1 of the first target device and the gate G2 of the second target device to the power supply Vdd, and then detect the drain voltage D2 of the second target device as the target voltage value Vb, and detect the source current of the second target device as the target current value I2. The third measurement combination can be as follows: apply a voltage of 0.05V to the drain D1 of the first target device, apply a voltage of 0V to the source S1 of the first target device, apply a voltage of 0V to the source S2 of the second target device, connect the gate G1 of the first target device and the gate G2 of the second target device to the power supply Vdd, then detect the drain voltage D2 of the second target device as the target voltage value Vc, and detect the drain current D1 of the first target device as the target current value I3.
[0067] Based on the first measurement combination, the second measurement combination, and the third measurement combination, the second correspondence shown in Formula 4, Formula 5, and Formula 6 can be obtained respectively. Solving the system of equations corresponding to the second correspondence can yield the second resistance value, i.e., the value of Rcnt.
[0068] Va / I1 = RL + 2*Rcnt (Formula 4) Vb / I2 = RR + 2*Rcnt (Formula 5) Vc / I3 = Rcnt+(RL+Rcnt) / / (RR+Rcnt) (Formula 6) Wherein, RL is the first target resistance and RR is the second target resistance.
[0069] In summary, this disclosure first determines a first resistance value of the target device based on its current characteristics, and then determines a second resistance value based on multiple resistance measurement combinations of the target device. These resistance measurement combinations include at least one of the source voltage, gate voltage, and drain voltage of the target device, with different voltage values for each combination. Then, a target resistance value is determined based on the first and second resistance values. The first resistance value may include the sum of the contact resistance and the area resistance of the target device, the second resistance value may include the contact resistance, and the target resistance value includes the area resistance. This disclosure can accurately extract the total resistance value of the contact resistance and area resistance based on the current characteristics of the target device, and eliminates the need for multiple test methods. Based on multiple resistance measurement combinations, only one test method is required to extract the contact resistance value, thus enabling rapid and accurate acquisition of the area resistance value of the target device and reducing the complexity of extracting the target device's resistance.
[0070] Figure 9 This is a block diagram illustrating a resistance determining device according to an exemplary embodiment, such as... Figure 9 As shown, the device 200 includes: The first determining module 201 is configured to determine a first resistance value of the target device based on the current characteristics of the target device. The first resistance value includes the sum of the contact resistance and the area resistance of the target device.
[0071] The second determining module 202 is configured to determine a second resistance value of the target device based on multiple resistance measurement combinations of the target device. The resistance measurement combinations include at least one combination of the source voltage, gate voltage, and drain voltage of the multiple target devices, and the voltage values of the source voltage, gate voltage, and drain voltage of the multiple target devices are different in different resistance measurement combinations. The second resistance value includes the contact resistance value of the target device.
[0072] The third determining module 203 is configured to determine the target resistance value of the target device based on the first resistance value and the second resistance value, wherein the target resistance value includes the resistance value of the area resistance of the target device.
[0073] In some embodiments, the first determining module 201 is configured to: Based on the current characteristics, multiple third resistance values and a first voltage value corresponding to each third resistance value are obtained. The third resistance value includes the total resistance of the target device, and the first voltage value includes the voltage between the source and gate of the target device.
[0074] Based on multiple third resistance values and multiple first voltage values, a first correspondence is obtained between the logarithm of the third resistance and the reciprocal of the specified voltage, where the specified voltage includes the difference between the voltage between the source and gate of the target device and the threshold voltage of the target device.
[0075] The first resistance value is determined based on the first correspondence.
[0076] Optionally, the second determining module 202 is configured as follows: Obtain the target voltage and target current values corresponding to each resistance measurement combination. The target voltage value includes one of the voltage values of the source voltage, gate voltage, and drain voltage of multiple target devices, and the target current value includes one of the current values of the source current, gate current, and drain current of multiple target devices.
[0077] The second resistance value is determined based on the target voltage and target current values corresponding to each resistance measurement combination.
[0078] Optionally, the second determining module 202 is configured as follows: For each resistance measurement combination, at least one target electrode is determined from the source, gate, and drain of multiple target devices.
[0079] Apply a corresponding preset voltage to each target electrode.
[0080] Obtain the voltage value corresponding to the first specified electrode as the target voltage value.
[0081] Obtain the current value corresponding to the second specified electrode as the target current value.
[0082] Optionally, the second determining module 202 is configured as follows: For each resistance measurement combination, a second correspondence is determined based on the target voltage value and the target current value.
[0083] The second resistance value is determined based on each second correspondence.
[0084] Optionally, the multiple target devices include a first target device and a second target device, and the resistance measurement combination includes a first measurement combination, a second measurement combination, and a third measurement combination. The target electrodes corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain, gate, and source of the first target device, and the gate and source of the second target device. The target voltage values corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain voltage of the second target device; the target current value corresponding to the first measurement combination includes the source current of the first target device; the target current value corresponding to the second measurement combination includes the source current of the second target device; and the target current value corresponding to the third measurement combination includes the drain current of the first target device.
[0085] Optionally, the second correspondence represents the correspondence between the contact resistance, the first target resistance, and the second target resistance, wherein the first target resistance includes the total resistance when the first target device is turned on, and the second target resistance includes the total resistance when the second target device is turned on.
[0086] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.
[0087] In summary, this disclosure first determines a first resistance value of the target device based on its current characteristics, and then determines a second resistance value based on multiple resistance measurement combinations of the target device. These resistance measurement combinations include at least one of the source voltage, gate voltage, and drain voltage of the target device, with different voltage values for each combination. Then, a target resistance value is determined based on the first and second resistance values. The first resistance value may include the sum of the contact resistance and the area resistance of the target device, the second resistance value may include the contact resistance, and the target resistance value includes the area resistance. This disclosure can accurately extract the total resistance value of the contact resistance and area resistance based on the current characteristics of the target device, and eliminates the need for multiple test methods. Based on multiple resistance measurement combinations, only one test method is required to extract the contact resistance value, thus enabling rapid and accurate acquisition of the area resistance value of the target device and reducing the complexity of extracting the target device's resistance.
[0088] Figure 10 This is a block diagram illustrating an electronic device according to an exemplary embodiment. Figure 10 As shown, the electronic device 300 may include a processor 301 and a memory 302. The electronic device 300 may also include one or more of a multimedia component 303, an input / output (I / O) interface 304, and a communication component 305.
[0089] The processor 301 controls the overall operation of the electronic device 300 to complete all or part of the steps in the method for determining the resistance described above. The memory 302 stores various types of data to support the operation of the electronic device 300. This data may include, for example, instructions for any application or method operating on the electronic device 300, and application-related data such as contact data, sent and received messages, pictures, audio, video, etc. The memory 302 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. The multimedia component 303 may include a screen and audio components. The screen may be, for example, a touchscreen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signals may be further stored in memory 302 or transmitted via communication component 305. The audio component also includes at least one speaker for outputting audio signals. I / O interface 304 provides an interface between processor 301 and other interface modules, such as a keyboard, mouse, buttons, etc. These buttons may be virtual or physical buttons. Communication component 305 is used for wired or wireless communication between the electronic device 300 and other devices. Wireless communication may include Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, or 4G, or a combination thereof; therefore, the corresponding communication component 305 may include a Wi-Fi module, a Bluetooth module, or an NFC module.
[0090] In an exemplary embodiment, the electronic device 300 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the resistance determination method described above.
[0091] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the resistance determination method described above. For example, the computer-readable storage medium may be the memory 302 including the program instructions described above, which may be executed by the processor 301 of the electronic device 300 to complete the resistance determination method described above.
[0092] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the resistance determination method described above.
[0093] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the resistance determination method described above.
[0094] The preferred embodiments of the present disclosure have been described in detail above with reference to the accompanying drawings. However, the present disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.
[0095] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0096] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A method of determining resistance, characterized by, The method includes: Based on the current characteristics of the target device, a first resistance value of the target device is determined, wherein the first resistance value includes the sum of the contact resistance and the area resistance of the target device. A second resistance value of the target device is determined based on multiple resistance measurement combinations of the target device. The resistance measurement combinations include at least one of the source voltage, gate voltage, and drain voltage of the target device. The voltage values of the source voltage, gate voltage, and drain voltage of the target device are different in different resistance measurement combinations. The second resistance value includes the contact resistance of the target device. The target resistance value of the target device is determined based on the first resistance value and the second resistance value, wherein the target resistance value includes the resistance value of the area resistance of the target device.
2. The method of claim 1, wherein, Determining the first resistance value of the target device based on its current characteristics includes: Based on the current characteristics, a plurality of third resistance values and a first voltage value corresponding to each third resistance value are obtained. The third resistance value includes the total resistance of the target device, and the first voltage value includes the voltage between the source and the gate of the target device. Based on the plurality of third resistance values and the plurality of first voltage values, a first correspondence between the logarithm of the total resistance of the target device and the reciprocal of a specified voltage is fitted, wherein the specified voltage includes the difference between the voltage between the source and gate of the target device and the threshold voltage of the target device; The first resistance value is determined based on the first correspondence.
3. The method of claim 1, wherein, Determining the second resistance value of the target device based on multiple resistance measurement combinations includes: Obtain the target voltage value and target current value corresponding to each resistance measurement combination. The target voltage value includes at least one of the voltage values of the source voltage, gate voltage and drain voltage of the plurality of target devices, and the target current value includes at least one of the current values of the source current, gate current and drain current of the plurality of target devices. The second resistance value is determined based on the target voltage value and the target current value corresponding to each resistance measurement combination.
4. The method of claim 3, wherein, The step of obtaining the target voltage value and target current value corresponding to each of the resistance measurement combinations includes: For each of the resistance measurement combinations, at least one target electrode is determined from the source, gate, and drain of the plurality of target devices; Apply a corresponding preset voltage to each of the target electrodes; Obtain the voltage value corresponding to the first designated electrode as the target voltage value; Obtain the current value corresponding to the second designated electrode as the target current value.
5. The method of claim 4, wherein, Determining the second resistance value based on the target voltage value and the target current value corresponding to each resistance measurement combination includes: For each resistance measurement combination, a second correspondence is determined based on the target voltage value and the target current value; The second resistance value is determined according to each of the second correspondences.
6. The method of claim 5, wherein, The plurality of target devices includes a first target device and a second target device. The resistance measurement combination includes a first measurement combination, a second measurement combination, and a third measurement combination. The target electrodes corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain, gate, and source of the first target device, and the gate and source of the second target device. The target voltage values corresponding to the first measurement combination, the second measurement combination, and the third measurement combination all include the drain voltage value of the second target device. The target current value corresponding to the first measurement combination includes the source current value of the first target device. The target current value corresponding to the second measurement combination includes the source current value of the second target device. The target current value corresponding to the third measurement combination includes the drain current value of the first target device.
7. The method of claim 6, wherein, The second correspondence represents the correspondence between the contact resistance, the first target resistance, and the second target resistance. The first target resistance includes the total resistance when the first target device is turned on, and the second target resistance includes the total resistance when the second target device is turned on.
8. An apparatus for determining resistance, characterized by The device includes: The first determining module is configured to determine a first resistance value of the target device based on the current characteristics of the target device, wherein the first resistance value includes the sum of the contact resistance and the area resistance of the target device. The second determining module is configured to determine a second resistance value of the target device based on multiple resistance measurement combinations of the target device, wherein the resistance measurement combinations include a combination of at least one of the source voltage, gate voltage, and drain voltage of the target device, and the voltage values of the source voltage, gate voltage, and drain voltage of the target device are different in different resistance measurement combinations; the second resistance value includes the resistance value of the contact resistance of the target device; The third determining module is configured to determine the target resistance value of the target device based on the first resistance value and the second resistance value, wherein the target resistance value includes the resistance value of the area resistance of the target device.
9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the program implements the steps of the method described in any one of claims 1-7.
10. An electronic device, characterized in that, include: A memory on which computer programs are stored; A processor for executing the computer program in the memory to implement the steps of the method according to any one of claims 1-7.
11. A computer program product, comprising a computer program, characterized in that, When executed by a processor, the computer program implements the steps of the method described in any one of claims 1-7.