Light emitting diode device and backlight module

Abstract

The invention provides a light-emitting diode device and a backlight module, in the light-emitting diode device, a plurality of lead frames are arranged, and a first lead frame, a second lead frame, a third lead frame, a fourth lead frame, a fifth lead frame and a sixth lead frame are isolated through insulation parts. The first chip, the second chip and the third chip are arranged on the fifth lead frame, the first chip is connected with the first wire frame and the fourth wire frame, the second chip is connected with the second wire frame and the fifth wire frame, and the third chip is connected with the third wire frame and the sixth wire frame, so that the light-emitting diode device obtains higher structural strength, meanwhile, the heat dissipation area is increased, and the heat dissipation efficiency is improved. In addition, in the backlight module, the optical component of a special structure is adopted, and the display effect with rich color expressions can be obtained.

Description

Technical Field

[0001] This invention relates to the field of LED device technology, and in particular to a light-emitting diode device and a backlight module. Background Technology

[0002] Color gamut is the value representing the breadth of colors a screen can display, directly affecting the color performance of a television picture. A higher color gamut value means a screen can display a wider range of colors, resulting in richer color reproduction. Color gamut is directly related to the color purity of the screen's color filter and backlight. Improving color purity from the backlight to achieve better display effects for televisions and displays is currently a research focus. The color purity of the backlight is directly related to the half-width at half-maximum (HWHM) of the red, green, and blue light rays. To obtain a higher color gamut, materials with narrow HWHMs have become a research hotspot. Quantum dots, with their narrow HWHM, can easily achieve a color gamut exceeding 100%, but due to their poor heat and moisture resistance, they are not suitable for direct packaging. Green light-emitting diodes (LEDs) have narrow HWHMs, and their color gamut is comparable to that of quantum dot materials. However, when green and blue LEDs are mixed to form white light, the mixing is uneven, resulting in non-uniform white light and affecting its usability. Summary of the Invention

[0003] In order to solve the problems existing in the prior art, the present invention aims to provide a light-emitting diode device and a backlight module that can achieve a uniform color mixing effect.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: A light-emitting diode device includes: a first chip, a second chip, a third chip, a housing, and a phosphor conversion layer; The housing is provided with an inwardly recessed cavity, and the bottom of the cavity is provided with: a first lead frame, a second lead frame, a third lead frame, a fourth lead frame, a fifth lead frame, a sixth lead frame, and an insulating part; The first lead frame, the second lead frame, the third lead frame, the fourth lead frame, the fifth lead frame, and the sixth lead frame are isolated from each other by the insulating portion; The first chip, the second chip, and the third chip are disposed on the fifth lead frame; The first chip is connected to the first wire frame and the fourth wire frame, the second chip is connected to the second wire frame and the fifth wire frame, and the third chip is connected to the third wire frame and the sixth wire frame; The fluorescence conversion layer fills the cavity.

[0005] As a further improvement of the present invention, the first lead frame, the second lead frame, and the third lead frame are disposed on the first side of the bottom of the cavity; The fifth lead frame includes a vertical portion and a horizontal portion that are perpendicular to each other. The vertical portion is located at the middle of the bottom of the cavity and extends from one edge of the bottom of the cavity to another non-adjacent edge. The horizontal portion extends from the center of the vertical portion to a second side of the bottom of the cavity. The horizontal portion is located between the fourth lead frame and the sixth lead frame. The first chip, the second chip, and the third chip are disposed on the vertical part.

[0006] As a further improvement of the present invention, the second chip emits green light with a peak wavelength of 510nm~550nm, and the first chip and the third chip emit blue light with a peak wavelength of 430~490nm.

[0007] As a further improvement of the present invention, the peak emission wavelength of the second chip is 430nm~490nm, and the peak emission wavelengths of the first chip and the third chip are 510nm~550nm.

[0008] As a further improvement of the present invention, the difference between the distance between the second chip and the first chip and the distance between the second chip and the third chip is less than or equal to 0.2 mm.

[0009] As a further improvement of the present invention, the fluorescence conversion layer includes at least one fluorescence conversion material, and the emission wavelength of the fluorescence conversion layer is greater than the emission wavelength of the first chip.

[0010] As a further improvement of the present invention, the fluorescent conversion material comprises: M2AX6:Mn 4+ The structure is a substance in which M is Li, Na, K, Rb or Cs; A is Ti, Si, Ge or Zr; and X is F, Cl or Br.

[0011] The beneficial effects of the present invention are as follows: the arrangement of the first lead frame, the second lead frame, the third lead frame, the fourth lead frame, the fifth lead frame, and the sixth lead frame of the present invention can enable the light-emitting diode device to obtain higher structural strength, while increasing the heat dissipation area.

[0012] The present invention also provides a backlight module, including: a PCB, optical components, and light-emitting diode devices as described above; The light-emitting diode device is electrically connected to the PCB, and the optical component covers the light-emitting diode.

[0013] As a further improvement of the present invention, the optical component mirror includes: a light-transmitting mirror, a back plate, a reflective sheet, a diffuser plate, a white light conversion film, and a prism film; The light-transmitting mirror covers the light-emitting diode, the reflective sheet is disposed on the surface of the PCB, and the reflective sheet is sequentially disposed with the back plate, the diffuser plate, the white light conversion film, and the prism film.

[0014] As a further improvement of the present invention, the light-transmitting mirror includes: a concave portion, a supporting portion, a reflective portion, a linear portion, a curved portion, and a total reflection concave portion; The two sides of the concave portion are connected to the reflective portion, and the reflective portion is sequentially connected to the linear portion, the curved portion, and the total reflection concave portion; The diameter of the concave portion is 1.5 to 1.9 times the widest point of the light-emitting surface of the LED; The two total reflection concave portions are connected to form a V-shaped concave portion that is recessed in the direction of the concave portion; The ratio of the depth of the V-shaped indentation to the thickness of the light-transmitting lens is 0.4~0.6; The light-emitting diode device is located below the concave portion; The support portion is located at the bottom of the reflective portion; The reflective part is connected to the PCB.

[0015] The beneficial effects of this invention are as follows: the color gamut value of the backlight module of this invention is comparable to that of quantum dots, resulting in a display effect with rich color performance. Simultaneously, through the structure of this invention, uniform LED color mixing can be achieved even with a large spacing. Attached Figure Description

[0016] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.

[0017] Figure 1 This is a top view of the light-emitting diode device described in Example 1.

[0018] Figure 2 This is a side view of the light-emitting diode device described in Example 1; Figure 3 This is a top view of the light-emitting diode device described in Example 4; Figure 4 This is a side view of the backlight module described in Example 5; Figure 5 This is a partial structural diagram of the backlight module described in Example 5; Figure 6 This is a schematic diagram of the structure of the light-transmitting mirror described in Example 5; Figure 7 This is a schematic diagram of the connector structure in Example 5.

[0019] 1. Light-emitting diode device; 11. First chip; 12. Second chip; 13. Third chip; 14. Housing; 141. Cavity; 142. First lead frame; 143. Second lead frame; 144. Third lead frame; 145. Fourth lead frame; 146. Fifth lead frame; 1461. Vertical portion; 1462. Horizontal portion; 147. Sixth lead frame; 148. Reflective layer; 15. Phosphor conversion layer; 16. 1. Insulation part; 2. Electrical connection part; 3. Backlight module; 31. PCB; 32. Optical components; 321. Lens; 3211. Concave part; 3212. Support part; 3213. Reflective part; 3214. Linear part; 3215. Curved part; 3216. Total internal reflection concave part; 322. Back plate; 323. Reflective sheet; 324. Diffuser plate; 325. White light conversion film; 226. Prism film; 23. Connector. Detailed Implementation

[0020] To make the technical problems solved by the present invention, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] Example 1 This embodiment provides a light-emitting diode device 1, such as... Figure 1 and Figure 2 The structure includes: a first chip 11, a second chip 12, a third chip 13, a housing 14, and a phosphor conversion layer 15. The housing 14 has an inwardly recessed cavity 141. The bottom of the cavity 141 has: a first lead frame 142, a second lead frame 143, a third lead frame 144, a fourth lead frame 145, a fifth lead frame 146, a sixth lead frame 147, and an insulating portion 16. The inner wall of the cavity 141 forms a reflective layer 148, which is coated with a reflective epoxy compound. The first lead frame 142 and the second lead frame 145... 3. The third lead frame 144, the fourth lead frame 145, the fifth lead frame 146, and the sixth lead frame 147 are isolated from each other by the insulating part 16; the first chip 11, the second chip 12, and the third chip 13 are disposed on the fifth lead frame 146; the first chip 11 is connected to the first lead frame and the fourth lead frame through the electrical connection part 2, the second chip 12 is connected to the second lead frame and the fifth lead frame through the electrical connection part 2, and the third chip 13 is connected to the third lead frame and the sixth lead frame through the electrical connection part 2; the fluorescent conversion layer 15 is filled in the cavity 141.

[0022] The second chip 12 emits green light with a peak wavelength of 510nm~550nm, while the first chip 11 and the third chip 13 emit blue light with a peak wavelength of 430nm~490nm. Furthermore, the first chip 11, the second chip 12, and the third chip 13 can be independently controlled. The fluorescence conversion layer 15 converts the monochromatic light emitted by the first chip 11, the second chip 12, and the third chip 13 into visible light of different wavelengths, which are ultimately mixed to form white light.

[0023] Furthermore, the first lead frame 142, the second lead frame 143, and the third lead frame 144 are disposed on the first side of the bottom of the cavity 141; the fifth lead frame 146 includes a vertical portion 1461 and a horizontal portion 1462 that are perpendicular to each other. The vertical portion 1461 is located at the middle of the bottom of the cavity 141 and extends from one edge of the bottom of the cavity 141 to another non-adjacent edge. The horizontal portion 1462 extends from the center of the vertical portion 1461 to the second side of the bottom of the cavity 141. The horizontal portion 1462 is located between the fourth lead frame 145 and the sixth lead frame 147; the first chip 11, the second chip 12, and the third chip 13 are disposed on the vertical portion 1461.

[0024] Electrical connection part 2 is a connecting lead. Specifically, the positive terminal of the first chip 11 is electrically connected to the first lead frame 142 via the lead; the positive terminal of the second chip 12 is electrically connected to the second lead frame 143 via the lead; the positive terminal of the third chip 13 is electrically connected to the third lead frame 144 via the lead; the negative terminal of the first chip 11 is electrically connected to the fourth lead frame 145 via the lead; the negative terminal of the second chip 12 is electrically connected to the lateral portion 1462 of the fifth lead frame 146 via the lead; and the negative terminal of the third chip 13 is electrically connected to the sixth lead frame 147 via the lead.

[0025] The difference between the distance between the second chip 12 and the first chip 11 and the distance between the second chip 12 and the third chip 13 is 0.2mm, meaning that the distance between the second chip 12 and the first chip 11 and the distance between the second chip 12 and the third chip 13 are similar.

[0026] The fluorescence conversion layer 15 includes at least one fluorescence conversion material, and the emission wavelength of the fluorescence conversion layer 15 is greater than the emission wavelength of the first chip 11.

[0027] Fluorescent conversion materials include: M2AX6:Mn 4+ The material has a structure in which M is Li, Na, K, Rb or Cs; A is Ti, Si, Ge or Zr; X is F, Cl or Br, and the emission wavelength of the fluorescent conversion material is 631 nm.

[0028] The fluorescence conversion layer 15 in this embodiment also includes SiO2 particles, and the mass ratio of SiO2 particles to fluorescence conversion material in the shell is approximately the same.

[0029] Example 2 This embodiment provides another light-emitting diode device 1, which differs from embodiment 1 in that the difference between the distance between the second chip 12 and the first chip 11 and the distance between the second chip 12 and the third chip 13 is equal to 0.15mm, that is, the distance between the second chip 12 and the first chip 11 and the distance between the second chip 12 and the third chip 13 are similar.

[0030] Example 3 This embodiment provides another light-emitting diode device 1, which differs from Embodiment 1 in that: in this embodiment, the second chip 12 has an emission peak wavelength of 430-490nm, and the first chip 11 and the third chip 13 have emission peak wavelengths of 510-550nm. In this embodiment, the reflective layer 148 of the cavity 141 is coated with PCT material with reflective function. In this embodiment, the fluorescence conversion material is composed of a CaAlSiN:Eu structure, and its emission wavelength is 650nm. In this embodiment, the fluorescence conversion layer 15 also contains ZrO2 particles.

[0031] Example 4 This embodiment provides another light-emitting diode device 1, which differs from Embodiment 1 in that: the first chip 11 consists of two identical chips in a set, and the third chip 13 consists of two identical chips in a set. In this embodiment, the fluorescence conversion material is M2AX6:Mn with an emission wavelength of 631nm. 4+ The structure is composed of SiAlON:Eu with an emission wavelength of 535nm. In this embodiment, the fluorescence conversion layer 15 also contains a mixture of organosilicon particles and acrylic particles.

[0032] Example 5 This embodiment provides a backlight module, such as Figure 4 and Figure 5 As shown, it includes: PCB31, optical component 32, and light-emitting diode device 1 in embodiment 1; the light-emitting diode device 1 is electrically connected to PCB31, and the optical component 32 covers the light-emitting diode.

[0033] The optical component 32 includes: a light-transmitting lens 321, a back plate 322, a reflective sheet 323, a diffuser plate 324, a white light conversion film 325, and a prism film 226. The light-transmitting lens 321 covers the top of the light-emitting diode, and the reflective sheet 323 is disposed on the surface of the PCB 31. The reflective sheet 323 is sequentially provided with the back plate 322, the diffuser plate 324, the white light conversion film 325, and the prism film 226. It should be noted that the reflective sheet 323 covers the PCB 31 except for the area of ​​the light-emitting diode device 1.

[0034] like Figure 6 As shown, the light-transmitting lens 321 includes: a concave portion 3211, a support portion 3212, a reflective portion 3213, a linear portion 3214, a curved portion 3215, and a total reflection concave portion 3216; the two sides of the concave portion 3211 are connected to the reflective portion 3213, and the reflective portion 3213 is sequentially connected to the linear portion 3214, the curved portion 3215, and the total reflection concave portion 3216; the two total reflection concave portions 3216 are connected to form a V-shaped depression in the direction of the concave portion 3211; the ratio of the depth of the V-shaped depression to the thickness of the light-transmitting lens 321 is 0.4; the light-emitting diode device 1 is located below the concave portion 3211; the diameter D of the concave portion 3211 is 1.5 times the widest point of the light-emitting surface of the light-emitting diode; the support portion 3212 is located at the bottom of the reflective portion 3213; the reflective portion 3213 is connected to the PCB 31; a connector 23 is provided at the edge of the reflective sheet 323.

[0035] Because the half-peak of green light is relatively narrow, in this embodiment, the second chip is located at the optical center, and the first and third chips are arranged symmetrically. Combined with the reflection of the light-transmitting mirror, the light can be distributed twice within the lead frame, thereby achieving a uniform color mixing effect.

[0036] Example 6 This embodiment provides another backlight module, including: PCB31, optical component 32, and light-emitting diode device 1 in embodiment 3; other differences from embodiment 4 are: the ratio of V-shaped recess depth to light-transmitting lens 321 thickness is 0.6; the diameter D of the concave part 3211 is 1.7 times the widest part of the light-emitting diode light-emitting surface.

[0037] Example 7 This embodiment provides another backlight module, including: PCB 31, optical component 32, and light-emitting diode device 1 in embodiment 4; other differences from embodiment 4 are: the ratio of V-shaped recess depth to light-transmitting lens 321 thickness is 0.5; the diameter D of the concave part 3211 is 1.9 times the widest part of the light-emitting diode light-emitting surface.

[0038] As can be seen from the above embodiments, the present invention has the following beneficial effects: 1. The backlight module of the present invention has a color gamut value comparable to that of quantum dots, achieving a display effect with rich color expression.

[0039] 2. The light-emitting diode device structure of the present invention, combined with a light-transmitting mirror, achieves a uniform visual effect for the backlight module.

[0040] 3. The lead frame structure of the device of the present invention can achieve higher structural strength and increase the heat dissipation area.

[0041] In this description, references to terms such as "an embodiment," "example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0042] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style of the specification is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0043] The technical principles of the present invention have been described above with reference to specific embodiments. These descriptions are merely for explaining the principles of the invention and should not be construed as limiting the scope of protection of the invention in any way. Based on this explanation, those skilled in the art can readily conceive of other specific embodiments of the invention without inventive effort, and these embodiments will all fall within the scope of protection of the present invention.

Claims

1. A light-emitting diode device, characterized in that, include: First chip, second chip, third chip, casing and phosphor conversion layer; The housing is provided with an inwardly recessed cavity, and the bottom of the cavity is provided with: a first lead frame, a second lead frame, a third lead frame, a fourth lead frame, a fifth lead frame, a sixth lead frame, and an insulating part; The first lead frame, the second lead frame, the third lead frame, the fourth lead frame, the fifth lead frame, and the sixth lead frame are isolated from each other by the insulating portion; The first chip, the second chip, and the third chip are disposed on the fifth lead frame; The first chip is connected to the first wire frame and the fourth wire frame, the second chip is connected to the second wire frame and the fifth wire frame, and the third chip is connected to the third wire frame and the sixth wire frame; The fluorescence conversion layer fills the cavity.

2. The light-emitting diode device according to claim 1, characterized in that, The first lead frame, the second lead frame, and the third lead frame are disposed on the first side of the bottom of the cavity; The fifth lead frame includes a vertical portion and a horizontal portion that are perpendicular to each other. The vertical portion is located at the middle of the bottom of the cavity and extends from one edge of the bottom of the cavity to another non-adjacent edge. The horizontal portion extends from the center of the vertical portion to a second side of the bottom of the cavity. The horizontal portion is located between the fourth lead frame and the sixth lead frame. The first chip, the second chip, and the third chip are disposed on the vertical part.

3. The light-emitting diode device according to claim 1, characterized in that, The second chip has a peak emission wavelength of 510nm~550nm, and the first chip and the third chip have peak emission wavelengths of 430nm~490nm.

4. The light-emitting diode device according to claim 1, characterized in that, The second chip has a peak emission wavelength of 430nm~490nm, and the first chip and the third chip have peak emission wavelengths of 510nm~550nm.

5. The light-emitting diode device according to any one of claims 1 to 3, characterized in that, The difference between the distance between the second chip and the first chip, and the difference between the distance between the second chip and the third chip, is less than or equal to 0.2 mm.

6. The light-emitting diode device according to any one of claims 1 to 3, characterized in that, The fluorescence conversion layer includes at least one fluorescence conversion material, and the emission wavelength of the fluorescence conversion layer is greater than the emission wavelength of the first chip.

7. The light-emitting diode device according to claim 6, characterized in that, The fluorescent conversion material includes: M2AX6:Mn 4+ The structure is a substance in which M is Li, Na, K, Rb or Cs; A is Ti, Si, Ge or Zr; and X is F, Cl or Br.

8. A backlight module, characterized in that, include: PCB, optical components, and light-emitting diode devices as described in any one of claims 1 to 7; The light-emitting diode device is electrically connected to the PCB, and the optical component covers the light-emitting diode.

9. The backlight module according to claim 8, characterized in that, The optical components include: a light-transmitting mirror, a back plate, a reflective sheet, a diffuser plate, a white light conversion film, and a prism film; The light-transmitting mirror covers the light-emitting diode, the reflective sheet is disposed on the surface of the PCB, and the reflective sheet is sequentially disposed with the back plate, the diffuser plate, the white light conversion film, and the prism film.

10. The backlight module according to claim 9, characterized in that, The light-transmitting mirror includes: a concave portion, a supporting portion, a reflective portion, a linear portion, a curved portion, and a total reflection concave portion; The two sides of the concave portion are connected to the reflective portion, and the reflective portion is sequentially connected to the linear portion, the curved portion, and the total reflection concave portion; The diameter of the concave portion is 1.5 to 1.9 times the widest point of the light-emitting surface of the LED; The two total reflection concave portions are connected to form a V-shaped concave portion that is recessed in the direction of the concave portion; The ratio of the depth of the V-shaped indentation to the thickness of the light-transmitting lens is 0.4~0.6; The light-emitting diode device is located below the concave portion; The support portion is located at the bottom of the reflective portion; The reflective part is connected to the PCB; A connector is provided at the edge of the reflector.

Images