Laminated micro-channel structure and preparation method thereof

Abstract

The invention relates to a laminated micro-channel structure and a preparation method thereof. The laminated micro-channel structure comprises a first substrate and a second substrate located on one side of the first substrate, a plurality of first through holes are formed in the first substrate at intervals, a plurality of second through holes and a plurality of third through holes are formed in the second substrate at intervals, and the second through holes and the third through holes penetrate in the thickness direction of the second substrate. The second through holes and the first through holes are in one-to-one correspondence and are communicated; a first circuit layer is arranged on the side, facing the first substrate, of the second substrate, a second circuit layer is arranged on the side, deviating from the first substrate, of the second substrate, a conductive part is arranged in the third through hole, the first circuit layer is electrically connected with the second circuit layer through the conductive part, and the first circuit layer and the second circuit layer are staggered from the second through hole; the first substrate and the second substrate are connected and fixed through sealant, and the sealant is adjacent to the edges of the first substrate and the second substrate. The problems that a traditional laminated micro-channel structure is uneven in heating, prone to dry burning, short in service life and the like can be solved, and the liquid atomization efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of electronic cigarette technology, specifically disclosing a layered microchannel structure and its preparation method. Background Technology

[0002] In the field of electronic atomization devices, the atomizer coil, as a core component, directly affects the atomization effect, reliability, and lifespan. Traditional atomizer coils mostly employ a structure where a heating wire is wound around a porous wicking material (such as cotton fiber, ceramics, or other porous materials). The wicking material adsorbs and transports liquid to the surface of the heating wire for heating and atomization. However, this structure has several inherent drawbacks: First, the wicking material is prone to carbonization and aging under prolonged high temperatures, leading to a decline in wicking performance, resulting in uneven atomization and even localized dry burning that produces harmful substances. Second, the contact area and uniformity between the heating wire and the wicking material are difficult to control precisely, causing uneven heat distribution and affecting atomization efficiency and flavor consistency. Furthermore, the electrode leads usually need to be led out from the front or side of the atomizer coil, making the structure complex and inconvenient to install, and long-term use may lead to poor contact due to vibration or corrosion.

[0003] To address these issues, the industry has attempted to fabricate planar atomizer cores using ceramic substrates combined with printed circuits. However, problems remain, such as interference between the liquid supply path and circuit layout, and suboptimal electrode lead-out methods. These limitations mean that the reliability, power handling capacity, and lifespan of the atomizer core still have room for improvement. Therefore, it is necessary to develop an atomizer core with a more rational structure, uniform heating, stable liquid conduction, and reliable electrical connections to enhance atomization performance and product durability. Summary of the Invention

[0004] One of the objectives of this invention is to provide a stacked microchannel structure that can solve problems such as uneven heating, easy dry burning, and short lifespan in traditional stacked microchannel structures, thereby improving liquid atomization efficiency.

[0005] The second objective of this invention is to provide a method for preparing a stacked microchannel structure, which can produce a stacked microchannel structure with high atomization efficiency.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] On one hand, a stacked microchannel structure is provided, including a first substrate and a second substrate located on one side of the thickness direction of the first substrate. The first substrate is provided with a plurality of first through holes spaced apart and penetrating along the thickness direction of the first substrate. The second substrate is provided with a plurality of second through holes and a plurality of third through holes spaced apart and penetrating along the thickness direction of the second substrate. The second through holes correspond one-to-one with the first through holes and are connected. A first circuit layer is provided on the side of the second substrate facing the first substrate, and a second circuit layer is provided on the side of the second substrate away from the first substrate. A conductive part is provided in the third through hole. The first circuit layer is electrically connected to the second circuit layer through the conductive part. The first circuit layer and the second circuit layer are both offset from the second through holes. The first substrate and the second substrate are connected and fixed by a sealant, and the sealant is adjacent to the edges of the first substrate and the second substrate.

[0008] As a further embodiment of the stacked microchannel structure, there are two second substrates, with the first substrate located between the two second substrates, and the second vias, the third vias, the first circuit layer, and the second circuit layer on the two second substrates correspond one-to-one.

[0009] As a further embodiment of the stacked microchannel structure, the size of the first through-hole is smaller than the size of the second through-hole; Preferably, both the first through hole and the second through hole are circular holes, the diameter of the first through hole is 2μm-1000μm, and the diameter of the second through hole is 5μm-1500μm; Preferably, the first through hole and the second through hole are coaxial; More preferably, the diameter of the first through hole is 10μm-30μm, and the diameter of the second through hole is 30μm-50μm.

[0010] As a further embodiment of the stacked microchannel structure, the resistance of the first circuit layer is greater than that of the second circuit layer; Preferably, the resistance of the first circuit layer is 0.2Ω-350Ω, and the resistance of the second circuit layer is 0.1Ω-300Ω; More preferably, the resistance of the first circuit layer is 4Ω-6.8Ω, and the resistance of the second circuit layer is 0.6Ω-1.1Ω.

[0011] As a further embodiment of the stacked microchannel structure, the first circuit layer includes several first circuits, which are bent to form multiple meandering structures; the second circuit layer includes several second circuits, which are completed to form multiple meandering structures. The first circuit layer and the second circuit layer correspond one-to-one, and multiple second through holes are provided in the interval enclosed by each meandering structure.

[0012] As a further embodiment of the stacked microchannel structure, the width of the second line is greater than the width of the first line; Preferably, the width of the first line is 0.1μm-3000μm, and the width of the second line is 0.2μm-3500μm.

[0013] As a further embodiment of the stacked microchannel structure, the third through hole is divided into two sets of hole structures arranged at intervals. Each set of hole structures includes multiple third through holes. All the second through holes are located between the two sets of hole structures. The two ends of the first line are electrically connected to the conductive parts in the two sets of hole structures, and the two ends of the second line are electrically connected to the conductive parts in the two sets of hole structures.

[0014] As a further embodiment of the stacked microchannel structure, the first substrate is selected from either a glass plate or a ceramic plate, the second substrate is selected from either a glass plate or a ceramic plate; and / or, it further includes a protective layer, the protective layer covering the first circuit layer, the second circuit layer and the conductive portion, and the second via exposed in the protective layer; Preferably, the protective layer is selected from any one of a nickel-gold layer, a nickel-palladium-gold layer, an OSP layer, or a carbon oxide layer.

[0015] On the other hand, a method for preparing the aforementioned stacked microchannel structure is provided, comprising the following steps: S10. A first substrate and a second substrate are provided. The first substrate is subjected to an opening process to form a plurality of first through holes penetrating the first substrate. The second substrate is subjected to an opening process to form a plurality of second through holes and third through holes penetrating the second substrate. S20. Simultaneously, a first circuit layer is formed on one side of the second substrate, a conductive portion is formed in the third through hole, and a second circuit layer is formed on the other side of the second substrate, and the first circuit layer is electrically connected to the second circuit layer through the conductive portion. S30. Apply sealant to one side of the thickness direction of the first substrate and / or the second substrate and near the edge, so that the first substrate and the second substrate are fixedly connected by the sealant to obtain the finished product. S40. Cut the finished product to obtain a stacked microchannel structure.

[0016] As a further embodiment of the method for preparing the layered microchannel structure, step S20 specifically includes the following steps: S20A: A first conductive layer is formed on both sides of the second substrate in the thickness direction and inside the third through hole; S20B: Press a first dry film after the first conductive layer on both sides of the second substrate in the thickness direction, and expose and develop the first dry film to expose the third through hole. S20C. A second conductive layer is formed on the surface of the first conductive layer in the third through hole, and the first conductive layer and the second conductive layer constitute the conductive part. S20D: Remove the residual first dry film, press a second dry film on both sides of the second substrate in the thickness direction, and make the second dry film cover the first conductive layer and the third via; expose and develop the second dry film to form patterned holes that expose the first conductive layer on both sides of the second substrate in the thickness direction; etch the first conductive layer exposed in the patterned holes so that one of the first conductive layers forms the first conductive layer and the other first conductive layer forms the second circuit layer. And / or, between step S20 and step S30, a protective layer is further included: covering the surfaces of the first circuit layer, the second circuit layer and the conductive portion respectively.

[0017] The beneficial effects of this invention are: The stacked microfluidic channel structure of the present invention is composed of a first substrate and a second substrate stacked together. A first through-hole on the first substrate and a second through-hole on the second substrate are connected to form a microfluidic channel. A first circuit layer and a second circuit layer on the second substrate are electrically connected through a conductive portion in a third through-hole. When an external power source is connected to the second circuit layer, current flows through the conductive portion to the first circuit layer, the first circuit layer heats up, and the heat is transferred to the surface of the second substrate, the side of the first substrate adjacent to the second substrate, and the areas of the first and second through-holes adjacent to the first circuit layer. When the liquid flows through the second through-hole through the heated area, it absorbs heat and atomizes, and the generated vapor is discharged through the first through-hole.

[0018] The stacked microchannel structure of this invention solves the problems of uneven heating, easy dry burning, and short lifespan in traditional stacked microchannel structures. By integrating the heating circuit and the liquid channel on the second substrate, uniform heating and stable liquid conduction are achieved; the back electrode is brought out through conductive vias, simplifying the structure and improving reliability; the first and second circuit layers are staggered from the second via, avoiding short circuits and blockages, and ensuring a stable and efficient atomization process. Attached Figure Description

[0019] Figure 1 This is a cross-sectional schematic diagram of a stacked microchannel structure according to an embodiment of the present invention; Figure 2 This is a cross-sectional schematic diagram of a stacked microchannel structure according to another embodiment of the present invention; Figure 3 This is a top view schematic diagram of the stacked microchannel structure according to an embodiment of the present invention; Figure 4 yes Figure 3 A magnified view of part A in the middle.

[0020] In the picture: 100, First substrate; 1001, First through hole; 200, Second substrate; 2001, Second through hole; 2002, Third through hole; 300, First circuit layer; 310, First circuit; 400, Second circuit layer; 410, Second circuit; 500, Conductive part; 600, Sealant. Detailed Implementation

[0021] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0022] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0023] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0024] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0025] like Figure 1 As shown, the stacked microchannel structure of this embodiment includes a first substrate 100 and a second substrate 200 located on one side of the thickness direction of the first substrate 100. The first substrate 100 has a plurality of first through holes 1001 spaced apart, the first through holes 1001 penetrating along the thickness direction of the first substrate 100. The second substrate 200 has a plurality of second through holes 2001 and a plurality of third through holes 2002 spaced apart, the second through holes 2001 and the third through holes 2002 penetrating along the thickness direction of the second substrate 200. The second through holes 2001 correspond one-to-one with and communicate with the first through holes 1001. A first circuit layer 300 is provided on the side of the substrate 200 facing the first substrate 100, and a second circuit layer 400 is provided on the side of the second substrate 200 away from the first substrate 100. A conductive portion 500 is provided in the third through hole 2002. The first circuit layer 300 is electrically connected to the second circuit layer 400 through the conductive portion 500. Both the first circuit layer 300 and the second circuit layer 400 are offset from the second through hole 2001. The first substrate 100 and the second substrate 200 are connected and fixed by a sealant 600, which is adjacent to the edges of the first substrate 100 and the second substrate 200.

[0026] The stacked microfluidic channel structure of this embodiment is composed of a first substrate 100 and a second substrate 200 stacked together. A first through-hole 1001 on the first substrate 100 and a second through-hole 2001 on the second substrate 200 are connected to form a microfluidic channel. A first circuit layer 300 and a second circuit layer 400 on the second substrate 200 are electrically connected through a conductive portion 500 in a third through-hole 2002. When an external power source is connected to the second circuit layer 400, current flows through the conductive portion 500 to the first circuit layer 300, causing the first circuit layer 300 to heat up. The heat is transferred to the surface of the second substrate 200, the side of the first substrate 100 adjacent to the second substrate 200, and the areas of the first through-hole 1001 and the second through-hole 2001 adjacent to the first circuit layer 300. When liquid flows through the heated area through the second through-hole 2001, it absorbs heat and atomizes, and the generated vapor is discharged through the first through-hole 1001. In this embodiment, the atomizing core is connected by the edge sealant 600 to achieve a stable and sealed connection between the first substrate 100 and the second substrate 200, ensuring stable isolation between the internal liquid microchannels and the electrical structure.

[0027] The stacked microchannel structure in this embodiment solves the problems of uneven heating, easy dry burning, and short lifespan in traditional stacked microchannel structures. By integrating the heating circuit and the liquid channel on the second substrate 200, uniform heating and stable liquid conduction are achieved; the back electrode is brought out through conductive vias, simplifying the structure and improving reliability; the first circuit layer 300 and the second circuit layer 400 are staggered from the second via 2001, avoiding short circuits and blockages, and ensuring a stable and efficient atomization process.

[0028] Furthermore, such as Figure 2 As shown, there are two second substrates 200, and the first substrate 100 is located between the two second substrates 200. The second through hole 2001, the third through hole 2002, the first circuit layer 300 and the second circuit layer 400 on the two second substrates 200 correspond one-to-one.

[0029] In this embodiment, a second substrate 200 is respectively disposed on both sides of a first substrate 100, and a first circuit layer 300 and a second circuit layer 400 are respectively disposed on the two second substrates 200. Liquid enters from a larger second through-hole 2001 on one of the second substrates 200. When current passes through the circuits of the two second substrates 200, the first circuit layers 300 on both sides are heated simultaneously, and the liquid on the liquid input side of the second substrate 200 is rapidly heated and atomized. The generated vapor is concentrated and passes through the smaller first through-hole 1001 on the middle first substrate 100 and then is ejected through the larger second through-hole 2001 on the other side of the second substrate 200. The first circuit layer 300 on the vapor output side of the second substrate 200 can heat the first substrate 100, and when the vapor is output through the second through-hole 2001 on the output side of the second substrate 200, the amount of vapor ejected is relatively large, thereby further improving the liquid atomization effect.

[0030] Furthermore, the size of the first through hole 1001 is smaller than the size of the second through hole 2001.

[0031] In this embodiment, the size of the first through-hole 1001 is designed to be smaller than that of the second through-hole 2001. When the stacked microfluidic structure is working, the liquid enters through the larger second through-hole 2001 and is transported to the surface of the second substrate 200. After the first circuit layer 300 is energized and heated, it rapidly atomizes the liquid. The generated steam is then concentrated and ejected through the smaller first through-hole 1001. This structural design ensures smooth liquid entry and prevents clogging. At the same time, the small size of the first through-hole 1001 helps to increase the steam injection speed and refine the atomized particles, thereby enhancing atomization uniformity and taste consistency, and effectively preventing leakage.

[0032] Furthermore, both the first through hole 1001 and the second through hole 2001 are circular holes and coaxial. The diameter of the first through hole 1001 is 2μm-1000μm, and the diameter of the second through hole 2001 is 5μm-1500μm, to ensure that the liquid smoothly enters the second through hole 2001 and is ejected at high speed through the first through hole 1001.

[0033] More preferably, the diameter of the first through hole 1001 is 10μm-30μm, and the diameter of the second through hole 2001 is 30μm-50μm.

[0034] In this embodiment, the aperture of the first through hole 1001 is designed to be 10μm-30μm and the aperture of the second through hole 2001 is designed to be 30μm-50μm, based on the principle that the first through hole 1001 is smaller than the second through hole 2001. This ensures that the liquid first flows smoothly through the second through hole 2001 with a larger aperture and comes into contact with the first circuit layer 300. After being heated and atomized, it forms steam. Subsequently, the steam is ejected at high speed through the first through hole 1001 with a smaller aperture under pressure.

[0035] In one specific example, the diameter of the first through hole 1001 is 10 μm and the diameter of the second through hole 2001 is 30 μm; in another specific example, the diameter of the first through hole 1001 is 20 μm and the diameter of the second through hole 2001 is 40 μm; in yet another specific example, the diameter of the first through hole 1001 is 30 μm and the diameter of the second through hole 2001 is 50 μm.

[0036] Preferably, the first through hole 1001 and the second through hole 2001 are coaxial. The coaxial arrangement can shorten the transport path of the atomized liquid to a certain extent. After the liquid reaches the surface of the second substrate 200 through the second through hole 2001 and is heated and atomized by the first circuit layer 300, it is quickly discharged through the first through hole 1001.

[0037] Furthermore, the resistance of the first line layer 300 is greater than the resistance of the second line layer 400.

[0038] Since the resistance of the first circuit layer 300 is greater than that of the second circuit layer 400, when the stacked microfluidic structure is in operation, when current flows from the second circuit layer 400 and the conductive part 500 to the first circuit layer 300, most of the electrical energy will be converted into heat energy on the high-resistance first circuit layer 300, making it a highly efficient main heating surface that directly heats the liquid flowing through the second through-hole 2001. The low-resistance second circuit layer 400 mainly undertakes the functions of uniform conductivity and current transmission, generating very little heat itself. The stacked microfluidic structure of this embodiment adopts this junction design, which can improve the electrothermal conversion efficiency and ensure that the heat is concentrated and accurately applied to the atomization area. This not only improves the instantaneous atomization response speed and temperature controllability, but also avoids unnecessary temperature rise of the circuit on the back side of the second substrate 200 (the side facing away from the first substrate 100), thus enhancing the long-term working stability of the stacked microfluidic structure.

[0039] Preferably, the resistance of the first circuit layer 300 is 0.2Ω-350Ω, and the resistance of the second circuit layer 400 is 0.1Ω-300Ω; more preferably, the resistance of the first circuit layer 300 is 4Ω-6.8Ω, and the resistance of the second circuit layer 400 is 0.6Ω-1.1Ω.

[0040] When the stacked microfluidic structure is in operation, the external current is first efficiently and with low loss transmitted to the conductive part 500 through the low-resistance second circuit layer 400, and then injected into the high-resistance first circuit layer 300. According to Joule's law, the electrical energy is mainly concentrated and converted into heat energy on the first circuit layer 300, making it a highly efficient and temperature-controllable main heating surface, directly atomizing the e-liquid flowing through the second through-hole 2001. This embodiment not only significantly reduces useless losses in the circuit transmission process and improves overall energy efficiency, but also ensures that the heating power is highly concentrated in the atomization area, resulting in faster temperature rise and more accurate temperature control. It effectively avoids energy waste, temperature fluctuations, and the risk of local overheating caused by uneven resistance of the circuit itself or heating in non-target areas. Thus, while optimizing the atomization response speed and flavor consistency, it also enhances the load matching of the battery and the long-term stability of the system.

[0041] Furthermore, the first line layer 300 includes a plurality of first lines 310, which are bent to form multiple meandering structures; the second line layer 400 includes a plurality of second lines 410, which are bent to form multiple meandering structures. The first line layer 300 and the second line layer 400 correspond one-to-one, and each meandering structure encloses a range of multiple second through holes 2001.

[0042] In this embodiment, both the first circuit layer 300 and the second circuit layer 400 employ a fine circuit design with a meandering structure, and they correspond precisely in space. This allows each section enclosed by the meandering structure to form an independent, regularly arranged, and highly efficient atomizing unit. When current flows, the first circuit layer 300 acts as the main heating element, and its meandering structure distributes heat evenly and densely within each unit. Meanwhile, the multiple second through-holes 2001 centrally located within each unit ensure that the liquid delivery system is fully surrounded and heated by the heating circuitry. This structural design achieves precise matching and maximized contact between the heating area and the second channel at the microscale, significantly improving heat utilization efficiency and atomization uniformity. Simultaneously, the regular unitized layout facilitates heat management and power control, effectively preventing localized overheating or underheating. This enhances atomization efficiency and taste consistency while also improving product reliability and lifespan.

[0043] Furthermore, such as Figure 3 and Figure 4 As shown, the width of the second line 410 is greater than or equal to the width of the first line 310.

[0044] In this embodiment, the second circuit layer 400 is designed to be wider than the first circuit layer 300. This results in lower circuit resistance and greater current carrying capacity for the second circuit layer 400. The width of the circuit is a crucial factor affecting the resistance value. The wider second circuit layer 400 acts as a low-impedance "current busbar," efficiently and evenly distributing the current from the external power source to each conductive part 500, thereby minimizing energy loss and heat accumulation during transmission. At the same time, the narrower first circuit layer 300 maintains the high resistance required by the design, ensuring that the current is concentrated and efficiently converted into heat energy when it passes through, becoming a precisely controllable atomized heat source.

[0045] Specifically, based on the premise that the width of the second line 410 is greater than or equal to the width of the first line 310, the width of the first line 310 is designed to be 0.1μm-3000μm, and the width of the second line 410 is designed to be 0.2μm-3500μm.

[0046] Furthermore, the third through hole 2002 is divided into two sets of hole structures arranged at intervals. Each set of hole structures includes multiple third through holes 2002. All the second through holes 2001 are located between the two sets of hole structures. The two ends of the first line 310 are electrically connected to the conductive parts 500 in the two sets of hole structures, and the two ends of the second line 410 are electrically connected to the conductive parts 500 in the two sets of hole structures.

[0047] In this design, two sets of spaced-apart perforated structures and their internal conductive parts 500 are located on opposite sides of the atomization area, serving as independent current input and output terminals. All second through holes 2001 used for liquid transport are centrally arranged between these two sets of perforated structures. The two ends of the first circuit layer 300 and the second circuit layer 400 are respectively connected to the two sets of conductive parts 500, so that during operation, current flows in from one electrode, evenly and laterally passes through the entire heating area with the second through holes 2001, and then flows back from the other electrode. This achieves a uniform distribution of current in the main heating area (first circuit layer 300), thereby obtaining an extremely uniform temperature field and avoiding local overheating or underheating caused by varying current path lengths. At the same time, by planning the electrical connection points (electrodes) entirely outside the atomization area, the interference of electrodes on the atomization process is eliminated, space utilization is improved, and the reliability and stability of the electrical connection are enhanced, which is beneficial to improving the overall atomization efficiency and product life.

[0048] Furthermore, the first substrate 100 is selected from either a glass plate or a ceramic plate, and the second substrate 200 is selected from either a glass plate or a ceramic plate. Substrates made of glass or ceramic materials not only provide excellent high-temperature resistance, insulation, and chemical stability, but their good thermal conductivity also contributes to the uniform diffusion of heat.

[0049] Furthermore, the stacked microfluidic structure of this embodiment also includes a protective layer, which covers the first circuit layer 300, the second circuit layer 400, and the conductive portion 500, with the second via 2001 exposed outside the protective layer. The protective layer covering the surface of the circuit (which is composed of the first circuit layer 300, the second circuit layer 400, and the conductive portion 500) completely encapsulates the first circuit layer 300, the second circuit layer 400, and the conductive portion 500, exposing only the second via 2001, thereby providing reliable protection for the core circuit at both physical and chemical levels.

[0050] This embodiment ensures that the liquid can smoothly pass through the second through-hole 2001 to contact the heating surface, be heated and atomized, and be discharged from the first through-hole 1001, while the edges of the first substrate 100 and the second substrate 200 are firmly bonded to achieve a seal, preventing leakage and structural delamination. The high-performance substrate material (glass plate or ceramic plate) ensures dimensional stability and safe insulation under high-temperature operation. The protective layer completely eliminates the risk of short circuit, oxidation, or liquid corrosion, significantly improving the overall mechanical strength, long-term reliability, and service life of the stacked microfluidic structure.

[0051] Preferably, the protective layer is selected from any one of a nickel-gold layer, a nickel-palladium-gold layer, an OSP layer (organic protective film), or a carbon oxide layer.

[0052] In this embodiment, the protective layer covering the circuit surface is made of any of the following materials: nickel-gold layer, nickel-palladium-gold layer, OSP (organic solder mask) layer, or carbon oxide layer. While ensuring that the second via 2001 is fully exposed to allow liquid passage, this provides a dense and stable surface encapsulation for the first circuit layer 300, the second circuit layer 400, and the conductive portion 500. These materials effectively isolate the circuit from direct contact and corrosion by air, moisture, and liquids, thereby ensuring the stability of electrical performance and the physical integrity of the circuit during current flow and heat generation.

[0053] In this embodiment, the liquid used for atomization can be e-liquid or other liquids that require atomization, and there are no specific limitations.

[0054] On the other hand, this embodiment provides a method for preparing the aforementioned stacked microchannel structure, which includes the following steps: S10. A first substrate 100 and a second substrate 200 are provided. The first substrate 100 is subjected to an opening process to form a plurality of first through holes 1001 penetrating the first substrate 100. The second substrate 200 is subjected to an opening process to form a plurality of second through holes 2001 and third through holes 2002 penetrating the second substrate 200. S20. Simultaneously, a first circuit layer 300 is formed on one side of the second substrate 200, a conductive portion 500 is formed in the third through hole 2002, and a second circuit layer 400 is formed on the other side of the second substrate 200, and the first circuit layer 300 is electrically connected to the second circuit layer 400 through the conductive portion 500. S30. Apply sealant 600 to one side of the thickness direction of the first substrate 100 and / or the second substrate 200 and near the edge, so that the first substrate 100 and the second substrate 200 are fixedly connected by the sealant 600 to obtain the finished product. S40. Cut the finished product to obtain a stacked microchannel structure.

[0055] This embodiment achieves precise alignment of the multi-layer structure and reliable electrical connections, while simplifying assembly steps, improving production efficiency and product yield. The use of sealant 600 ensures structural stability and sealing while avoiding thermal stress problems that may be caused by high-temperature sintering. The overall process has strong compatibility and is suitable for large-scale manufacturing, providing a reliable guarantee for the realization of the aforementioned atomization performance advantages (such as uniform heating, efficient atomization, and long life).

[0056] Furthermore, step S20 specifically includes the following steps: S20A: A first conductive layer is formed on both sides of the second substrate 200 in the thickness direction and inside the third through hole 2002. S20B: Press a first dry film after the first conductive layer on both sides of the second substrate 200 in the thickness direction, and expose and develop the first dry film to expose the third through hole 2002. S20C. A second conductive layer is formed on the surface of the first conductive layer in the third through hole 2002, and the first conductive layer and the second conductive layer constitute the conductive part 500. S20D: Remove the residual first dry film, press a second dry film on both sides of the second substrate 200 in the thickness direction, and make the second dry film cover the first conductive layer and the third via 2002; expose and develop the second dry film to form patterned holes that expose the first conductive layer on both sides of the second substrate 200 in the thickness direction, and etch the first conductive layer exposed in the patterned holes so that one of the first conductive layers forms the first conductive layer and the other first conductive layer forms the second circuit layer 400. And / or, between step S20 and step S30, a protective layer is further included: covering the surfaces of the first circuit layer 300, the second circuit layer 400 and the conductive portion 500 respectively.

[0057] In this embodiment, a first conductive layer is first deposited on both sides of the second substrate 200 and within the third via 2002 as a substrate. The third via 2002 is then exposed through a first dry film exposure and development process. Subsequently, a second conductive layer is selectively thickened within the third via 2002 to form a conductive portion 500 with more robust mechanical and electrical properties. Next, a second dry film exposure, development, and etching process is used to fabricate a first circuit layer 300 serving as the main heating element and a second circuit layer 400 serving as the current transmission layer. In subsequent surface treatment, protective layers such as nickel-gold, nickel-palladium-gold, OSP, or carbon oxide are applied to the surfaces of the first circuit layer 300, the second circuit layer 400, and the conductive portion 500 to effectively isolate them from environmental corrosion.

[0058] In this embodiment, the first circuit layer 300 and the second circuit layer 400 are basically the same in structure except for their widths. Taking the first circuit layer 300 as an example, the first circuit layer 300 includes a first metal layer and a second metal layer, wherein the material of the first metal layer is any one of Ti, Cu, and Ni, and the material of the second metal layer is any one of Ti, Cu, and Ni. In a specific example, the first metal layer is Ti and the second metal layer is copper. First, the Ti layer is sputtered onto the second substrate 200 (both sides of the second substrate 200 in the thickness direction and the wall of the third via 2002). Then, the Cu layer is sputtered onto the Ti layer. After pressing a first dry film onto the Cu layer on both sides of the second substrate 200 and exposing and developing it, the Cu layer is thickened by electroplating in the exposed third via 2002. Then, the film is removed, a second dry film is pressed, exposed and developed to form patterned holes that expose the Cu layer on both sides of the second substrate 200. The Cu layer exposed in the patterned holes is etched, then the film is removed, and the Ti layer exposed in the Cu layer is etched away, thereby forming the first circuit layer 300 and the second circuit layer 400.

[0059] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A layered microchannel structure, characterized in that, The system includes a first substrate and a second substrate located on one side of the first substrate along its thickness direction. The first substrate has a plurality of first through holes spaced apart and extending along the thickness direction of the first substrate. The second substrate has a plurality of second through holes and a plurality of third through holes spaced apart and extending along the thickness direction of the second substrate. The second through holes correspond one-to-one with the first through holes and are interconnected. A first circuit layer is provided on the side of the second substrate facing the first substrate, and a second circuit layer is provided on the side of the second substrate facing away from the first substrate. A conductive portion is provided in each of the third through holes. The first circuit layer is electrically connected to the second circuit layer through the conductive portion. Both the first circuit layer and the second circuit layer are offset from the second through holes. The first substrate and the second substrate are connected and fixed together by a sealant, which is adjacent to the edges of the first substrate and the second substrate.

2. The stacked microchannel structure according to claim 1, characterized in that, There are two second substrates, and the first substrate is located between the two second substrates. The second through-hole, the third through-hole, the first circuit layer and the second circuit layer on the two second substrates correspond one-to-one.

3. The stacked microchannel structure according to claim 1, characterized in that, The size of the first through hole is smaller than the size of the second through hole; Preferably, both the first through hole and the second through hole are circular holes, the diameter of the first through hole is 2μm-1000μm, and the diameter of the second through hole is 5μm-1500μm; Preferably, the first through hole and the second through hole are coaxial.

4. The stacked microchannel structure according to claim 1, characterized in that, The resistance of the first line layer is greater than the resistance of the second line layer; Preferably, the resistance of the first circuit layer is 0.2Ω-350Ω, and the resistance of the second circuit layer is 0.1Ω-300Ω.

5. The stacked microchannel structure according to claim 1, characterized in that, The first line layer includes several first lines, which are bent to form multiple meandering structures; the second line layer includes several second lines, which are completed to form multiple meandering structures. The first line layer and the second line layer correspond one-to-one, and multiple second through holes are provided in the interval enclosed by each meandering structure.

6. The stacked microchannel structure according to claim 5, characterized in that, The width of the second line is greater than or equal to the width of the first line; Preferably, the width of the first line is 0.1μm-3000μm, and the width of the second line is 0.2μm-3500μm.

7. The stacked microchannel structure according to claim 5, characterized in that, The third through hole is divided into two sets of hole structures arranged at intervals. Each set of hole structures includes multiple third through holes. All the second through holes are located between the two sets of hole structures. The two ends of the first line are electrically connected to the conductive parts in the two sets of hole structures, and the two ends of the second line are electrically connected to the conductive parts in the two sets of hole structures.

8. The stacked microchannel structure according to any one of claims 1 to 7, characterized in that, The first substrate is selected from either a glass plate or a ceramic plate, the second substrate is selected from either a glass plate or a ceramic plate; and / or, it further includes a protective layer, the protective layer covering the first circuit layer, the second circuit layer and the conductive portion, and the second via exposed in the protective layer; Preferably, the protective layer is selected from any one of a nickel-gold layer, a nickel-palladium-gold layer, an OSP layer, or a carbon oxide layer.

9. A method for preparing the stacked microchannel structure according to any one of claims 1 to 8, characterized in that, Includes the following steps: S10. A first substrate and a second substrate are provided. The first substrate is subjected to an opening process to form a plurality of first through holes penetrating the first substrate. The second substrate is subjected to an opening process to form a plurality of second through holes and third through holes penetrating the second substrate. S20. Simultaneously, a first circuit layer is formed on one side of the second substrate, a conductive portion is formed in the third through hole, and a second circuit layer is formed on the other side of the second substrate, and the first circuit layer is electrically connected to the second circuit layer through the conductive portion. S30. Apply sealant to one side of the thickness direction of the first substrate and / or the second substrate and near the edge, so that the first substrate and the second substrate are fixedly connected by the sealant to obtain the finished product. S40. Cut the finished product to obtain a stacked microchannel structure.

10. The method for preparing the stacked microchannel structure according to claim 9, characterized in that, Step S20 specifically includes the following steps: S20A: A first conductive layer is formed on both sides of the second substrate in the thickness direction and inside the third through hole; S20B: Press a first dry film after the first conductive layer on both sides of the second substrate in the thickness direction, and expose and develop the first dry film to expose the third through hole. S20C. A second conductive layer is formed on the surface of the first conductive layer in the third through hole, and the first conductive layer and the second conductive layer constitute the conductive part. S20D: Remove the residual first dry film, press a second dry film on both sides of the second substrate in the thickness direction, and make the second dry film cover the first conductive layer and the third via; expose and develop the second dry film to form patterned holes that expose the first conductive layer on both sides of the second substrate in the thickness direction; etch the first conductive layer exposed in the patterned holes so that one of the first conductive layers forms the first conductive layer and the other first conductive layer forms the second circuit layer. And / or, between step S20 and step S30, a protective layer is further included: covering the surfaces of the first circuit layer, the second circuit layer and the conductive portion respectively.

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