Semiconductor processing apparatus

Abstract

A semiconductor processing apparatus is disclosed. The semiconductor processing apparatus includes: a processing chamber configured to receive a plurality of substrates; an accumulator vessel in fluid communication with the processing chamber, the accumulator vessel configured to store the precursor in gaseous form; and at least two solid precursor storage containers, each configured to receive a precursor in gaseous form, to convert the received precursor in gaseous form to a solid state within the respective solid precursor storage container, and to convert the solid precursor to a gaseous phase. Each of the at least two solid precursor storage containers is in fluid communication with the accumulator container.

Description

Technical Field

[0001] This disclosure generally relates to the field of semiconductor processing methods and related structures and apparatuses, and also to the field of device and integrated circuit manufacturing. More specifically, this disclosure generally relates to semiconductor processing apparatuses in which precursors can be stored in a solid state. Background Technology

[0002] In the field of semiconductor manufacturing equipment, batch processing equipment (such as vertical furnaces) can provide a significant increase in output compared to single-wafer tools that typically process wafers one by one.

[0003] However, in order to form a layer of the desired thickness on each of the multiple wafers or substrates contained therein, the amount of precursor that needs to be supplied to the reactor chamber or processing chamber of the vertical furnace is significantly greater than the amount of precursor that needs to be supplied to the reactor chamber of a single wafer tool to form a layer of the same desired thickness. Furthermore, in order to provide, for example, acceptable yield and / or the required precursor pressure in the processing chamber, it may be necessary to supply the required amount of precursor over a specific short time span.

[0004] Some precursors, such as ammonia, can be stored in gaseous form for extended periods without decomposition. Storing them in gaseous form allows for rapid and reliable delivery of the precursors. Supplying such precursors to the processing chamber is relatively straightforward, as the required amount of gas can be supplied from a source in a sub-clean area. Other precursors, however, may decompose when stored in gaseous form, especially if they require storage at specific temperatures to prevent deposition on the surfaces of the containers holding the precursor gas, rendering them unsuitable for deposition processes. For such precursors, alternative solutions are needed.

[0005] There is a need for apparatus and methods that can supply large quantities of gaseous precursors as needed and at high flow rates.

[0006] Any discussion set forth in this section (including discussions of problems and solutions) is included in this disclosure merely for the purpose of providing background to this disclosure and should not be construed as an admission that any or all of the discussions were known at the time the invention was made or otherwise constituted prior art. Summary of the Invention

[0007] This summary presents a simplified description of the selected concepts, which will be described in further detail below. This summary is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0008] According to a first aspect of the invention, a semiconductor processing apparatus is provided, comprising: a processing chamber configured to receive a plurality of substrates; an accumulator container in fluid communication with the processing chamber configured to store a precursor in gaseous form; and at least two solid-state precursor storage containers, each configured to receive the precursor in gaseous form, such that the received precursor in gaseous form is converted into a solid state within the respective solid-state precursor storage container, and the precursor in solid state is converted into a gaseous phase. Each of the at least two solid-state precursor storage containers is in fluid communication with the accumulator container to allow the supply of the precursor in gaseous form to the accumulator container.

[0009] Providing precursors in gaseous form to a solid precursor storage container can have advantages over providing them in liquid or powder form. Providing precursors in liquid form (e.g., dissolved or otherwise carried by a solvent) to the precursor storage container, followed by solvent evaporation from the container, requires an additional drying step during (re)filling of the container, can lead to solvent contamination of the precursor to be extracted from the container, and may be capacity-limited, thus limiting the number of substrates that can be processed and impacting yield. Providing precursors in powder form can cause clogging and may require a carrier gas to remove the precursor from the container.

[0010] By providing at least two solid precursor storage containers, one of which can receive and store precursors, and the other of which can supply precursors to the accumulator container, the precursor gas can be continuously supplied to the accumulator container.

[0011] By providing an accumulator container for short-term storage of precursor gas near the processing chamber, high doses of precursor can be collected and supplied to the processing chamber in a shorter time than required to sublimate the same amount of precursor gas, thus allowing for faster supply of precursor to the processing chamber and therefore increasing yield.

[0012] Each of at least two solid precursor storage containers may be in fluid communication with a main precursor supply source for providing the precursor in gaseous form.

[0013] Providing fluid communication with the main precursor supply source allows at least two solid precursor storage containers to be refilled with precursor gas without having to be removed from the semiconductor processing device, thereby allowing the semiconductor processing device to operate for extended periods and thus increasing throughput.

[0014] Each of the at least two solid precursor storage containers may include a corresponding heater.

[0015] Each of at least two solid precursor storage containers may include a corresponding gas inlet port configured to direct the gaseous precursor into the corresponding solid precursor storage container.

[0016] The semiconductor processing apparatus may include: a first gas line for providing a fluid connection between a first solid-state precursor storage container and an accumulator container in at least two solid-state precursor storage containers; and a second gas line for providing a fluid connection between a second solid-state precursor storage container and an accumulator container in at least two solid-state precursor storage containers.

[0017] The semiconductor processing apparatus may include a first gas flow control valve disposed in a first gas line and a second gas flow control valve disposed in a second gas line. The semiconductor processing apparatus may include a controller configured to close the first gas flow control valve while substantially simultaneously opening the second gas flow control valve.

[0018] The semiconductor processing apparatus may include a third gas line for providing a fluid connection between a main precursor supply source for providing a precursor in gaseous form and a first solid precursor storage container among at least two solid precursor storage containers; and a fourth gas line for providing a fluid connection between the main precursor supply source and a second solid precursor storage container among at least two solid precursor storage containers.

[0019] The semiconductor processing apparatus may include a third gas flow control valve disposed in a third gas line and a fourth gas flow control valve disposed in a fourth gas line. The semiconductor processing apparatus may include a controller configured to open the third gas flow control valve while substantially simultaneously closing the fourth gas flow control valve.

[0020] The semiconductor processing apparatus may include a third gas flow control valve heater for heating a third gas flow control valve and a fourth gas flow control valve heater for heating a fourth gas flow control valve.

[0021] The semiconductor processing apparatus may include a housing for surrounding at least a portion of the semiconductor processing apparatus located between the main precursor supply source and the processing chamber, and a housing heater for heating the interior of the housing.

[0022] The housing may enclose at least one gas flow control valve. The gas pipeline may be substantially located outside the housing.

[0023] The enclosure may surround at least one gas pipeline. The enclosure may at least surround an accumulator container and at least two solid precursor storage containers.

[0024] The housing may enclose at least one gas flow control valve. The housing may enclose one or more of the first, second, third, fourth, fifth, and sixth gas flow control valves. The corresponding gas lines in fluid communication with the one or more gas flow control valves enclosed by the housing may be located outside the housing and may be heated using a heating jacket.

[0025] Accumulator containers may include accumulator container heaters.

[0026] The semiconductor processing apparatus may include a fifth gas flow control valve disposed upstream of the accumulator container and configured to control the gas flow into the accumulator container from any of the at least two solid precursor storage containers.

[0027] The semiconductor processing apparatus may include a sixth gas flow control valve located downstream of the accumulator container and configured to control the flow of gas from the accumulator container into the processing chamber.

[0028] The semiconductor processing apparatus may include a fifth gas flow control valve heater. The semiconductor processing apparatus may also include a sixth gas flow control valve heater.

[0029] Each of at least two solid precursor storage containers may include a first heater for heating a section of the respective solid precursor storage container near the respective gas inlet port; and a second heater for heating a section of the respective solid precursor storage container away from the respective gas inlet port.

[0030] By allowing independent control of the temperature in different sections of the solid precursor storage container, deposition of precursors at or near the gas inlet and / or gas outlet ports can be reduced or avoided during the sublimation of solid precursors contained in the solid precursor storage container.

[0031] A semiconductor processing apparatus may include more than one accumulator container, each accumulator container being configured to receive precursor gas from at least one of at least two solid precursor storage containers and to supply precursor gas to a processing chamber. The more than one accumulator container may be connected in parallel, such that each accumulator container can independently supply precursor gas to the processing chamber.

[0032] According to a second aspect of the present invention, a method for forming layers on a plurality of substrates using a semiconductor processing apparatus is provided. The method may include the following steps: receiving a gaseous precursor from a main precursor supply source in a first solid-state precursor storage container, simultaneously supplying a precursor from a second solid-state precursor storage container to an accumulator container, providing a precursor from the accumulator container to a processing chamber, simultaneously receiving a gaseous precursor from the main precursor supply source in the first solid-state precursor storage container, providing a purge gas to the processing chamber, simultaneously receiving a gaseous precursor from the main precursor supply source in the first solid-state precursor storage container, and providing a gaseous precursor from the second solid-state precursor storage container to the accumulator container, providing a second processing gas to the processing chamber, simultaneously receiving a gaseous precursor from the main precursor supply source in the first solid-state precursor storage container, and providing a gaseous precursor from the second solid-state precursor storage container to the accumulator container, and providing a purge gas to the processing chamber, simultaneously receiving a gaseous precursor from the main precursor supply source in the first solid-state precursor storage container, and providing a gaseous precursor from the second solid-state precursor storage container to the accumulator container.

[0033] According to a third aspect of the invention, a method is provided for providing a precursor gas to a processing chamber of a semiconductor processing apparatus, the semiconductor processing apparatus comprising: a processing chamber configured to receive a plurality of substrates; an accumulator container in fluid communication with the processing chamber configured to store a precursor in gaseous form; at least two solid precursor storage containers, each configured to receive the precursor in gaseous form such that the received gaseous precursor is converted into a solid state within the respective solid precursor storage container, and the solid precursor is converted into a gaseous phase, each of the at least two solid precursor storage containers being in fluid communication with the accumulator container to allow the supply of the gaseous precursor to the accumulator container. The method includes the steps of: i) receiving the precursor in gaseous form in a first solid precursor storage container of the at least two solid precursor storage containers and converting the precursor into a solid state; ii) converting the solid precursor into a gaseous form in a second solid precursor storage container of the at least two solid precursor storage containers and supplying the precursor in gaseous form to the accumulator container; and iii) supplying the precursor gas from the accumulator container to the processing chamber.

[0034] Steps i) and ii) can be performed substantially simultaneously. Steps ii) and iii) can be substantially non-overlapping in time. The method may include, after step iii), causing a second solid precursor storage container to receive the precursor in gaseous form and convert the precursor into a solid state, and causing a first solid precursor storage container to convert the solid precursor into a gaseous form and provide the gaseous precursor to an accumulator container.

[0035] Receiving a gaseous precursor into a solid precursor storage container may include supplying the gaseous precursor to the solid precursor storage container from a main precursor supply source. Converting the gaseous precursor into a solid state in the solid precursor storage container may include cooling a portion of the solid precursor storage container to a temperature below the deposition temperature of the precursor. Converting the solid precursor into a gaseous state in the solid precursor storage container may include heating a portion of the solid precursor storage container to a temperature above the sublimation temperature of the precursor.

[0036] The accumulator container may include a pressure sensor and a thermocouple, and step iii) may include determining the amount of precursor to be supplied to the reactor based on data received from the pressure sensor and the thermocouple. Step iii) may include closing the inlet port of the accumulator container such that no additional precursor gas is supplied to the accumulator container while the precursor gas is being supplied to the processing chamber. Step iii) may include keeping the inlet port of the accumulator container open such that the precursor gas is supplied to the accumulator container while the precursor gas is being supplied to the processing chamber.

[0037] Other technical features will be obvious to those skilled in the art based on the following figures, description and claims.

[0038] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0039] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0040] Some embodiments of the invention will now be described by way of example with reference to the accompanying drawings, in which:

[0041] Figure 1 This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention.

[0042] Figure 2 This is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention, including a housing and a heater.

[0043] Figure 3This is a schematic cross-sectional view of a solid-state precursor storage container that may be included in a semiconductor processing apparatus according to an embodiment of the present invention.

[0044] Figure 4 This is a schematic cross-sectional view of a processing chamber that may be included in a semiconductor processing apparatus according to an embodiment of the present invention.

[0045] Figure 5 This is a flowchart of a method according to an embodiment of the present invention.

[0046] Figure 6 The valve states of a semiconductor processing apparatus are shown at certain stages of a method according to an embodiment of the present invention.

[0047] Figure 7 The valve states of a semiconductor processing apparatus are shown at certain stages of a method according to an embodiment of the present invention.

[0048] Figure 8 This is a schematic diagram of a semiconductor processing apparatus with dosage determination function according to an embodiment of the present invention.

[0049] Figure 9 This is a flowchart of a deposition method according to an embodiment of the present invention.

[0050] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0051] The following description of exemplary embodiments of the methods and compositions is merely illustrative and intended for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0052] In this disclosure, the term "fluid communication" refers to the flow of a fluid, such as a gas or liquid or a mixture thereof, between the elements in one or both directions. Fluid communication can be achieved, for example, by means of gas lines, pipes, conduits, inlets, outlets, or any combination thereof. Fluid communication can be interruptible; for example, valves or other flow control elements may be present.

[0053] In this disclosure, any two numbers of a variable may constitute a working range of the variable, and any range indicated may include or exclude endpoints. Additionally, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and include equivalents, and in some embodiments may refer to an average, median, representative value, multi-value, etc. Furthermore, in this disclosure, the terms “comprising,” “consisting of,” and “having” may, in some embodiments, independently mean “generally or broadly comprising,” “including,” “substantially consisting of,” or “consisting of.” The meaning of any definition in this disclosure does not necessarily exclude the common and conventional meaning in some embodiments. In some cases, percentages indicated herein may be relative or absolute percentages.

[0054] Numerous exemplary materials are provided throughout the embodiments of this disclosure. It should be noted that the chemical formulas given for each exemplary material should not be construed as limiting, and the non-limiting exemplary materials given should not be limited by the given exemplary stoichiometry.

[0055] In this specification, it will be understood that the terms "on" or "above" can be used to describe relative positional relationships. Another element, film, or layer may be directly on the mentioned layer, or another layer (intermediate layer) or element may be inserted therebetween, or a layer may be disposed on the mentioned layer but not completely cover the surface of the mentioned layer. Therefore, unless the term "directly" is used alone, the terms "on" or "above" will be interpreted as relative concepts. Similarly, it should be understood that the terms "below," "under," or "beneath" will be interpreted as relative concepts.

[0056] refer to Figure 1 A semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 101 includes a processing chamber 102 configured to receive a plurality of substrates 103 for processing. The processing chamber 102 includes at least one processing chamber gas flow inlet 104 for allowing gas to enter the processing chamber 102 and at least one processing chamber gas exhaust outlet 105 for removing gas from the processing chamber 102. The semiconductor processing apparatus 101 includes an accumulator container 106 in fluid communication with the processing chamber 102, the accumulator container 106 being configured to store precursors in gaseous form. The semiconductor processing apparatus 101 includes at least two solid precursor storage containers, each in fluid communication with the accumulator container 106, to allow the supply of precursors in gaseous form to the accumulator container 106. Each of the at least two solid precursor storage containers 107 is configured to convert the solid precursor into a gaseous phase. Although in Figure 1Two solid precursor storage containers 107 are shown, but those skilled in the art will understand that more than two solid precursor storage containers may be present, such as three, four, or more. Hereinafter, a first solid precursor storage container 108 and a second solid precursor storage container 109 are described, without limiting the invention to embodiments having exactly two solid precursor storage containers 107.

[0057] The precursor can be a precursor that can be stored in a solid state for a long period of time without significant decomposition. When a precursor needs to be transported between components of the semiconductor processing device 101, the precursor can be converted into a gaseous state; for example, when a precursor is supplied from a solid precursor storage container 107 to an accumulator container 106. The precursor can be stored in gaseous form for a relatively short period of time, for example, stored in the accumulator container 106 before being transported to the processing chamber 102, or stored in the solid precursor storage container 107 before being transported to the accumulator container 106.

[0058] Each of at least two solid precursor storage containers 107 may be in fluid communication with a main precursor supply source 110 for providing precursors in gaseous form. The main precursor supply source 110 may supply gaseous precursors to the solid precursor storage containers 107 as needed. The main precursor supply source 110 may store solid precursors. The main precursor supply source 110 may be a sub-clean area supply source for supplying precursors to multiple semiconductor processing devices 101.

[0059] The semiconductor processing apparatus 101 may include: a first gas line 111 for providing a fluid connection between a first solid-state precursor storage container 108 and an accumulator container 106 in at least two solid-state precursor storage containers 107; and a second gas line 112 for providing a fluid connection between a second solid-state precursor storage container 109 and an accumulator container 106 in at least two solid-state precursor storage containers 107. The first gas line 111 may include a first gas flow control valve 113 for controlling the flow of precursor gas in the first gas line 111. The second gas line 112 may include a second gas flow control valve 114 for controlling the flow of precursor gas in the second gas line 112. The gas flow control valves 113 and 114 may be, for example, valves having only an open and a closed position, or valves configured to allow a specific amount of gas flow by neither fully opening nor fully closing. The first gas line 111 may include a first gas flow measurement device for measuring the gas flow rate in the first gas line 111. The second gas line 112 may include a second gas flow measuring device for measuring the gas flow rate in the second gas line 112.

[0060] By providing separate gas lines (through which gas flow can be controlled using appropriate gas flow control valves), the supply of precursors from each of at least two solid precursor storage containers 107 to the accumulator container 106 can be controlled.

[0061] The semiconductor processing apparatus 101 may include a third gas line 115 for providing a fluid connection between the host precursor supply source 110 and the first solid-state precursor storage container 108. The third gas line 115 may include a third gas flow control valve 117 for controlling the flow of precursor gas in the third gas line 115. The semiconductor processing apparatus 101 may include a fourth gas line 116 for providing a fluid connection between the host precursor supply source 110 and the second solid-state precursor storage container 109. The fourth gas line 116 may include a fourth gas flow control valve 118 for controlling the flow of precursor gas in the fourth gas line 116.

[0062] By providing a separate gas line (through which gas flow can be controlled using a corresponding gas flow control valve), the precursor supply from the main precursor supply source 110 to the solid precursor storage container 107 can be controlled independently. As will be discussed in more detail below, this allows one (or more) of the at least two solid precursor containers to supply gaseous precursors to the accumulator container 106, while one (or more) of the at least two solid precursor storage containers 107 receives gaseous precursors from the main precursor supply source 110.

[0063] The semiconductor processing apparatus 101 may include a fifth gas flow control valve 119 disposed upstream of the accumulator container 106 and configured to control gas flow from any of the at least two solid precursor storage containers 107 into the accumulator container 106. In some embodiments, the fifth gas flow control valve 119 may not be provided, and a third gas flow control valve 117 and a fourth gas flow control valve 118 may be used to control gas flow from the solid precursor storage containers 107 into the accumulator container 106. The semiconductor processing apparatus 101 may include a sixth gas flow control valve 120 disposed between the accumulator container 106 and the processing chamber 102 for controlling gas flow from the accumulator container 106 into the processing chamber 102. The semiconductor processing apparatus 101 may include a heating device for heating the fifth gas flow control valve 119. The semiconductor processing apparatus 101 may include a heating device for heating the sixth gas flow control valve 120.

[0064] The gas flow control valve used in the semiconductor processing apparatus according to an embodiment of the present invention preferably has a high flow conductance to minimize flow restriction caused by the passage through the valve, and a high operating temperature to ensure that any gas condensation at the valve is minimized.

[0065] The semiconductor processing apparatus 101 may include a second processing gas source 121 in fluid communication with the processing chamber 102, for supplying a second processing gas to the processing chamber 102. The second processing gas is different from the precursor. A second processing gas flow control valve 122 may be disposed between the second processing gas source 121 and the processing chamber 102, for controlling the flow of the second processing gas to the processing chamber 102. The semiconductor processing apparatus 101 may include a purge gas source 123 in fluid communication with the processing chamber 102, for supplying purge gas to the processing chamber 102. A purge gas flow control valve 124 may be disposed between the purge gas source 123 and the processing chamber 102, for controlling the flow of purge gas to the processing chamber 102.

[0066] refer to Figure 2 The semiconductor processing apparatus 101 may include a housing 125 for enclosing at least a portion of the semiconductor processing apparatus located between the main precursor supply source 110 and the processing chamber 102. This can help improve temperature uniformity in the precursor supply line. The housing 125 includes a housing heater 126 for heating the interior of the housing 125. In some embodiments, the housing 125 may enclose at least one gas flow control valve, such as at least one, and preferably all, of a first, second, third, fourth, fifth, and sixth gas flow control valve. Relevant gas lines in fluid communication with one or more gas flow control valves enclosed by the housing may be located outside the housing and may be heated using a heating jacket.

[0067] In some embodiments, housing 125 surrounds at least a portion of the first, second, third, fourth, and fifth gas lines, and preferably surrounds substantially all of the first, second, third, fourth, and fifth gas lines. In some embodiments, housing 125 surrounds accumulator container 106 and the first, second, third, fourth, fifth, and sixth gas flow control valves.

[0068] The housing heater 126 may be located inside the housing 125. The housing heater 126 may be integrated into one or more walls of the housing 125. The housing heater 126 may include a plurality of heating elements located inside the housing 125 and positioned along the walls of the housing 125.

[0069] Now for reference Figure 1 and Figure 2The semiconductor processing apparatus 101 may include a fifth gas line 127 providing a fluid connection between a solid-state precursor storage container 107 and a processing chamber 102, and an accumulator container 106 may be disposed within the fifth gas line 127. The fifth gas line 127 may include a fifth gas flow control valve 119 and a sixth gas flow control valve 120. In some embodiments, the accumulator container 106 may be a container having an input in fluid communication with the fifth gas line 127 and an output in fluid communication with the sixth gas line. In some embodiments, the accumulator container 106 may be a portion of the fifth gas line 127 between the fifth gas flow control valve 119 and the sixth gas flow control valve 120, i.e., a separate container may not be provided. In such embodiments, if a housing 125 is provided, the portion of the fifth gas line 127 between the fifth gas flow control valve 119 and the sixth gas flow control valve 120 may be located inside the housing 125.

[0070] In some embodiments, at least a portion, and preferably most of, of the fifth gas line 127 is located inside the housing 125. In some embodiments, the housing 125 surrounds the first gas line 111, the second gas line 112, and the fifth gas line 127 as much as possible, such that the minimum portion of each gas line is outside the housing 125 at the point where the respective gas line connects to, for example, a solid precursor storage container, an accumulator container 106, or a processing chamber 102.

[0071] Accumulator container 106 may include a pressure sensor 129 for measuring the pressure of the precursor gas in accumulator container 106 and an accumulator thermocouple 130 for measuring the temperature of the precursor gas in accumulator container 106. Accumulator thermocouple 130 may be located in a hot well extending from the top side of accumulator container 106 to near the center of the internal volume of accumulator container 106. Pressure sensor 129 may be located in the inlet line of accumulator container 106, i.e., in a fifth gas line 127 upstream of accumulator container 106. In embodiments providing housing 125, pressure sensor 129 may have a connection to the fifth gas line 127 inside housing 125.

[0072] Semiconductor processing apparatus 101 may include a corresponding heater for a gas flow control valve, which controls the flow of precursor gas through a gas line. The heater may be individually controllable. By heating the gas flow control valve through which the precursor gas flows to a temperature above the deposition temperature of the precursor gas, precursor deposition on the gas flow control valve can be prevented, thus avoiding blockage. The gas flow control valve may be continuously heated using its corresponding heater, or it may be heated only when it is in the open state to allow precursor gas to flow through it.

[0073] refer to Figure 3An example of a solid-state precursor storage container 301 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The solid-state precursor storage container 301 has a top wall 302, a bottom wall 303, and a side wall 304; a gas inlet port 305 and a gas outlet port 306. The gas inlet port 305 may be disposed in the top wall 302. The gas outlet port 306 may be disposed in the top wall 302. The gas inlet port 305 provides a conduit for precursor gas to flow into the solid-state precursor storage container 301 and may be in fluid communication with a main precursor supply source. The gas outlet port 306 provides a conduit for precursor gas to flow out of the solid-state precursor storage container 301 and may be in fluid communication with an accumulator container.

[0074] The solid precursor storage container 301 includes a top wall heater 307 for heating the top wall 302, a side wall heater 308 for heating the side walls 304, and a bottom wall heater 309 for heating the bottom wall 303. The top wall heater 307, side wall heater 308, and bottom wall heater 309 are individually controllable. The solid precursor storage container 301 may include a solid precursor storage container controller 310, which includes a top wall heater controller 311, a side wall heater controller 312, and a bottom wall heater controller 313, each of which is independently operable.

[0075] The top wall heater controller 311 can be configured to maintain the top wall 302 of the solid precursor storage container 301 at a temperature above the deposition temperature of the precursor gas during the supply of precursor from the main precursor supply source to the solid precursor storage container 301, to prevent precursor deposition on the top wall 302. The side wall heater controller 312 can be configured to maintain the side wall 304 of the solid precursor storage container 301 at a temperature above the deposition temperature of the precursor gas during the supply of precursor from the main precursor supply source to the solid precursor storage container 301, to prevent precursor deposition on the side wall 304. The bottom wall heater controller 313 can be configured to maintain the bottom wall 303 of the solid precursor storage container 301 at a temperature equal to or below the deposition temperature of the precursor gas during the supply of precursor from the main precursor supply source to the solid precursor storage container 301, so that precursor deposition occurs on the bottom wall 303.

[0076] The top wall heater 307 can be considered as a heater for heating the first section 314 of the solid precursor storage container 301 near the gas inlet port 305 and / or the gas outlet port 306, and the bottom wall heater 309 can be considered as a heater for heating the second section 315 of the solid precursor storage container 301 away from the gas inlet port 305. By providing separate controllable heaters for the first section 314 and the second section 315, the temperatures of these sections can be controlled to promote precursor deposition in or near the second section 315 and to prevent precursor deposition in or near the first section 314. For example, during refilling of the solid precursor storage container 301 with gaseous precursors, the bottom wall heater 309 can be controlled (e.g., using a bottom wall heater controller 313) to maintain the temperature of the bottom wall 303 below the precursor deposition temperature, and the top wall heater 307 can be controlled (e.g., using a top wall heater controller 311) to maintain the temperature of the top wall 302 above the precursor deposition temperature. The solid precursor storage container 301 in Figure 3 The diagram shows the presence of solid precursor 316, but solid precursor 316 may not be present at certain points in time, such as before the first filling or between refilling processes.

[0077] refer to Figure 4 An example of a processing chamber 501 that may be included in a semiconductor processing apparatus 101 is shown in more detail. The invention is not limited to including... Figure 5 The semiconductor processing apparatus 101 with a specific processing chamber 501 shown herein may be replaced by other types of processing chambers 501 having similar or different characteristics. Figure 5 The processing chamber 501 is shown. The processing chamber 501 may be generally bell-shaped. The processing chamber may be surrounded by a heating device, such as one or more thermal resistance heating coils 502 powered by a power source (not shown). The heating device provides heat to the processing chamber, which subsequently causes the internal volume 503 of the processing chamber to be heated. The processing chamber may be made of quartz, silicon carbide, silicon, or another suitable heat-resistant material.

[0078] The processing chamber may be supported at its lower end on a flange 504 to partially close the opening end 505 of the processing chamber 501. A substrate boat 506 may enter and / or exit the processing chamber via a central furnace opening 507 provided in the flange 504. A vertically movable door 508 may be configured to close the central furnace opening 507 and to support the substrate boat 506. The substrate boat 506 is configured to support multiple substrates 509. The substrate boat 506 may sometimes be inserted into the processing chamber when empty (i.e., without supporting any substrates 509). In some cases, the substrates 509 may be dummy wafers not intended for further manufacturing. The substrate boat 506 may support, for example, 100 substrates, 120 substrates, 150 substrates, 170 substrates, or more than 170 substrates.

[0079] Door 508 may be provided with a base 510. The base 510 is rotatable to rotate the substrate boat 506. Processing chamber 501 includes at least one processing chamber gas flow inlet 511 for providing a gas flow into the processing chamber. The processing chamber gas flow inlet 511 may be at least partially included in a flange 504. The flange 504 may include a processing chamber gas exhaust outlet 512 for removing gas from the processing chamber. The processing chamber gas exhaust outlet 512 may be connected to a vacuum pump 513.

[0080] The processing chamber gas flow inlet 511 can be configured to provide a flow of one or more of a processing gas (e.g., a precursor gas), a purge gas, and a cleaning gas into the processing chamber. In some embodiments, a separate processing chamber gas flow inlet 511 can be provided for each of one or more processing gases, a purge gas, and an optional cleaning gas.

[0081] The processing chamber gas flow inlet 511 may be provided with an injector 514, which is constructed and arranged within the processing chamber to extend vertically along the wall of the processing chamber toward a higher end into the interior space of the processing chamber. The injector 514 may include an injector opening for injecting gas toward the substrate 509. In some embodiments, the injector 514 may include a plurality of injector openings distributed along the vertical direction of the injector. In some embodiments, the injector 514 may include a single opening at the top of the injector 514 opposite the end of the injector 514 connected to the processing chamber gas flow inlet 511. In some embodiments, the injector 514 is not provided, and gas flows upward from the processing chamber gas flow inlet 511 without being guided by the injector. In some embodiments, a processing chamber gas flow inlet 511 with an injector may be provided in addition to an additional processing chamber gas flow inlet 511 not connected to an injector.

[0082] One or more thermocouples 515 may be provided in the processing chamber 501 for measuring the temperature inside the processing chamber 501. Thermocouples 515 may each be installed in a different heating zone of the processing chamber 501 corresponding to a corresponding heating coil 502.

[0083] Refer again Figure 1The semiconductor processing apparatus 101 may include a controller 128 configured to control one or more elements of the semiconductor processing apparatus 101. For example, the controller 128 may be configured to control the state of gas flow control valves (such as a first gas flow control valve 113, a second gas flow control valve 114, a third gas flow control valve 117, a fourth gas flow control valve 118, a fifth gas flow control valve 119, a sixth gas flow control valve 120, a purge gas flow control valve 124, and a second processing gas flow control valve 122) and / or their respective heaters. The controller 128 may be configured to control the top wall heater 307, side wall heater 308, and bottom wall heater 309 of the solid precursor storage containers 301 and 107. A top wall heater controller 311 may be included in the controller 128. A side wall heater controller 312 may be included in the controller 128. A bottom wall heater controller 313 may be included in the controller 128. The controller 128 may be configured to control the heating coil 502 of the processing chamber 102. The controller 128 may be configured to receive data from various sensors included in the semiconductor processing device 101 (e.g., processing chamber 102, thermocouple 515 of 501, pressure sensor 129, accumulator thermocouple 130, differential pressure sensor (described in more detail below)), and to control one or more elements of the semiconductor processing device 101 based on the received data. The controller 128 may store in a memory a series of instructions for performing the methods according to embodiments of the invention, and may load such instructions into a processor configured to execute the instructions in order to perform the methods.

[0084] refer to Figure 5 A flowchart illustrating a method for providing a precursor gas to a processing chamber 102 of a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The method includes the following steps: receiving a gaseous precursor in a first solid-state precursor storage container 108 of at least two solid-state precursor storage containers 107 and converting the precursor to a solid state (step S101); converting the solid precursor stored therein into a gaseous form in a second solid-state precursor storage container 109 of at least two solid-state precursor storage containers 107 and providing the gaseous precursor to an accumulator container 106 (step S102); and providing the precursor gas from the accumulator container 106 to the processing chamber 102 (step S103). Steps S101 and S102 are preferably performed simultaneously.

[0085] In step S101, receiving a gaseous precursor into the first solid precursor storage container 108 may include supplying precursor gas from the main precursor supply source 110 to the first solid precursor storage container 108. Step S101 may include setting the third gas flow control valve 117 to an open state. In step S101, the second solid precursor storage container 109 may not receive precursor gas from the main precursor supply source 110, therefore step S101 may include setting the fourth gas flow control valve 118 to a closed state.

[0086] In step S101, converting the received gaseous precursor into a solid state in the first solid precursor storage container 108 may include maintaining the temperature of the walls of the first solid precursor storage container 108 at a temperature below the deposition temperature of the precursor. This causes the precursor to condense on the walls of the first solid precursor storage container 108. The deposited precursor can then be stored in a solid state until it needs to be provided to the accumulator container 106 in a gaseous state. By storing the precursor in a solid state in the first solid precursor storage container 108, the time during which the precursor can be stored without significant decomposition is significantly extended compared to storing the precursor in a gaseous state. By providing the precursor in a gaseous state to the first solid precursor storage container 108, clogging or contamination problems associated with providing precursors in powder or liquid form can be avoided. Step S101 may include maintaining the temperature of a region of the walls of the first solid precursor storage container 108 at a temperature above the deposition temperature of the precursor, such a region being adjacent to the gas inlet and / or gas outlet of the first solid precursor storage container 108. This can help prevent precursors from depositing in and / or around the inlet and / or outlet, thereby reducing the chance of flow restriction at the inlet and / or outlet. Therefore, the first solid precursor storage container 108 may include one or more individually controllable heaters configured to heat corresponding areas of the walls of the first solid precursor storage container 108.

[0087] In step S102, converting the solid precursor stored in the second solid precursor storage container 109 into a gaseous form may include heating the temperature of the wall of the second solid precursor storage container 109 to a temperature higher than the sublimation temperature of the solid precursor.

[0088] Steps S101 and S102 can be performed substantially simultaneously. That is, while the first solid-state precursor storage container 108 undergoes a refilling process by receiving and converting the gaseous precursor into a solid state, the second solid-state precursor storage container 109 sublimates the gaseous precursor and supplies it to the accumulator container 106. The solid-state precursor storage container 107 can subsequently switch roles, with the first solid-state precursor storage container 108 sublimating and supplying the gaseous precursor to the accumulator container 106, while the second solid-state precursor storage container 109 receives the gaseous precursor and converts it into a solid state. This allows for a continuous supply of precursors to the accumulator container 106, increasing the throughput of the semiconductor processing device 101.

[0089] The gas flow control valve status during steps S101 and S102 is as follows: Figure 6 As shown. During the supply of precursor from the host precursor supply source 110 to the first solid precursor storage container 108, the first solid precursor storage container 108 does not supply precursor gas to the accumulator container 106; therefore, the first gas flow control valve 113 is set to the closed state, and the third gas flow control valve 117 is set to the open state. During the supply of precursor from the second solid precursor storage container 109 to the accumulator container 106, the second solid precursor storage container 109 does not receive precursor from the host precursor supply source; therefore, the second gas flow control valve 114 is set to the open state, and the fourth gas flow control valve 118 is set to the closed state. The fifth gas flow control valve 119 (if present) is set to the open state, while the sixth gas flow control valve 120 (if present) may be set to the closed state. The purge gas flow control valve 124 and the second processing gas flow control valve 122 may be opened or closed depending on the state of the processing chamber 102, for example, depending on which stage of the layer deposition process is being performed. For example, steps S101 and S102 may occur during the purge gas supply step and / or the second processing gas supply step in the layer deposition process.

[0090] The gas flow control valve status during step S103 is as follows: Figure 7 As shown. Once a sufficient amount of gas precursor has accumulated in the accumulator container 106, the sixth gas flow control valve 120 is set to the open state, and the fifth gas flow control valve 119 can be set to the open or closed state. This allows the precursor gas to flow from the accumulator container 106 to the processing chamber 102. During step S103, the second processing gas flow control valve 122 and the purge gas flow control valve 124 are closed.

[0091] After step S103 is completed, the process can be repeated, i.e., steps S101, S102, and S103 can be performed again. Steps S101, S102, and S103 can form part of a deposition process for depositing layers of desired thickness on multiple substrates 103 in the processing chamber 102. The deposition process may include multiple repetitions of steps S101, S102, and S103, followed by removal of multiple substrates 103 from the processing chamber 102, loading of different multiple substrates 103 into the processing chamber 102, and further deposition processes for depositing layers of desired thickness on the different multiple substrates 103, including repeating steps S101, S102, and S103.

[0092] The functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 can be interchanged. Specifically, in step S101, the second solid precursor storage container 109 receives the precursor in gaseous form and converts it to a solid state, while in step S102, the first solid precursor storage container 108 converts the solid precursor stored therein into a gaseous form and provides the gaseous precursor to the accumulator container 106. This function interchange can occur once the amount of precursor in the second solid precursor storage container 109 (which is the solid precursor storage container that supplies the precursor to the accumulator container 106) has decreased to an insufficient amount to provide the required amount of precursor gas for the required number of repetitions in step S103. For example, in some embodiments, at least two solid precursor storage containers can each be positioned on a load scale to measure the amount of precursor stored therein, and once the measured amount is below a threshold, the controller can interchange the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109. In some embodiments, the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 can be automatically interchanged between deposition processes.

[0093] The first solid precursor storage container 108 and the second solid precursor storage container 109 may continue to exchange functions based on the remaining precursor amount or between deposition processes. Depending on the amount of precursor required for the deposition layer, the functions may not be exchanged between each deposition process.

[0094] In some embodiments, step S103 may include determining the amount of precursor to be supplied to the processing chamber 102. For example, the accumulator container 106 may include a pressure sensor 129 for measuring the pressure of the precursor gas in the accumulator container 106 and an accumulator thermocouple 130 for measuring the temperature of the precursor gas contained in the accumulator container 106. Step S103 may include determining the amount of precursor to be supplied to the processing chamber 102 based on data received from the pressure sensor 129 and the accumulator thermocouple 130 before and / or during the supply of the precursor to the processing chamber 102, for example by using the ideal gas law, which is based on knowledge of the internal volume of the accumulator container 106.

[0095] In some embodiments, in step S103, the fifth gas flow control valve 119 is closed while precursor gas is supplied to the processing chamber 102, such that precursor gas is not supplied to the accumulator container 106 while the processing chamber 102 is being supplied with precursor gas. This allows for highly accurate calculation of the amount of precursor supplied to the processing chamber 102.

[0096] In some embodiments, in step S103, the fifth gas flow control valve 119 is opened while precursor gas is supplied to the processing chamber 102, thereby allowing precursor gas to flow into the accumulator container 106 while simultaneously supplying precursor gas to the processing chamber 102. This may allow a higher amount or dose of precursor gas to be supplied to the processing chamber 102.

[0097] For example, refer to Figure 8 In some embodiments, the semiconductor processing apparatus 101 may include an orifice valve 131 disposed in a gas flow path between the accumulator container 106 and the processing chamber 102, and a differential pressure sensor 132 for measuring the pressure difference between a point upstream of the orifice valve 131 and a point downstream of the orifice valve 131. This allows the flow rate of the precursor gas to be determined, thereby determining the amount of precursor gas supplied to the processing chamber 102 during a specific time period.

[0098] refer to Figure 9 A flowchart of a deposition method according to an embodiment of the present invention is shown. The deposition method is performed using a semiconductor processing apparatus 101 according to an embodiment of the present invention. The deposition method includes the following steps:

[0099] In step S201, the first solid precursor storage container 108 receives gaseous precursor from the main precursor supply source 110, while precursor gas is supplied from the second solid precursor storage container 109 to the accumulator container 106. In step S201, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state; the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state; the fifth gas flow control valve 119 can be set to the open or closed state, and the sixth gas flow control valve 120 can be set to the closed state. This step can be considered a preparation or pre-filling step and can be performed once at the start of a series of repetitions of steps S202 to S205.

[0100] In step S202, precursor gas is supplied from accumulator container 106 to processing chamber 102, while first solid precursor storage container 108 receives gas precursor from main precursor supply source 110. In step S202, third gas flow control valve 117 is set to open, fourth gas flow control valve 118 is set to closed; first gas flow control valve 113 is set to closed, second gas flow control valve 114 can be set to open or closed; fifth gas flow control valve 119 can be set to the same state as second gas flow control valve; and sixth gas flow control valve 120 is set to open. Second processing gas flow control valve 122 and purge gas flow control valve 124 are set to closed. By supplying precursor gas to processing chamber 102, the precursor gas can react with the surfaces of multiple substrates in a self-contained manner to form a layer including the precursor on the surfaces of the multiple substrates in processing chamber 102.

[0101] In step S203, purge gas is supplied to the processing chamber 102, while the first solid precursor storage container 108 receives gaseous precursor from the main precursor supply source 110, and the second solid precursor storage container 109 supplies gaseous precursor to the accumulator container 106. In step S203, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state; the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state; the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the open state, while the second processing gas flow control valve 122 is set to the closed state. By supplying purge gas to the processing chamber 102, any precursor gas remaining in the processing chamber 102 from step S202 can be removed from the processing chamber 102 via the processing chamber gas discharge outlet 105.

[0102] In step S204, a second processing gas is supplied to the processing chamber 102, while the first solid precursor storage container 108 receives a gas precursor from the main precursor supply source 110, and the second solid precursor storage container 109 supplies a gas precursor to the accumulator container 106. In step S204, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state; the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state; the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the closed state, while the second processing gas flow control valve 122 is set to the open state. By supplying the second processing gas to the processing chamber 102, the second processing gas can react with the surfaces of multiple substrates to form a layer comprising the components of the second processing gas and the precursor on the multiple substrates.

[0103] In step S205, purge gas is supplied to the processing chamber 102, while the first solid precursor storage container 108 receives gaseous precursor from the main precursor supply source 110, and the second solid precursor storage container 109 supplies gaseous precursor to the accumulator container 106. In step S205, the third gas flow control valve 117 is set to the open state, the fourth gas flow control valve 118 is set to the closed state; the first gas flow control valve 113 is set to the closed state, the second gas flow control valve 114 is set to the open state; the fifth gas flow control valve 119 is set to the open state, and the sixth gas flow control valve 120 is set to the closed state. The purge gas flow control valve 124 is set to the open state, while the second processing gas flow control valve 122 is set to the closed state. By supplying purge gas to the processing chamber 102, any second processing gas remaining in the processing chamber 102 from step S204 can be removed from the processing chamber 102 via the processing chamber gas discharge outlet 105.

[0104] The method may include repeating steps S202 to S205 until a layer of desired thickness is formed on a plurality of substrates 103 in the processing chamber 102. The method may include, once a layer of desired thickness has been formed on the plurality of substrates 103 in the processing chamber 102, performing a substrate exchange procedure, which includes cooling the processing chamber 102 to an unloading temperature, removing the plurality of substrates 103 from the processing chamber 102, unloading the plurality of substrates 103 from a substrate boat, loading different plurality of substrates 103 into a substrate boat, loading the substrate boat into the processing chamber 102, evacuating the processing chamber 102, stabilizing the temperature of the processing chamber 102, and repeating steps S201 to S205 to deposit a layer of desired thickness onto the different plurality of substrates 103. Step S201 may occur during the substrate exchange procedure.

[0105] The method may include monitoring the amount of precursor in the solid precursor storage container of the supply accumulator container 106, for example using a load scale, and switching the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109 once the amount falls below a threshold. The controller 128 may be configured to perform such monitoring and control, for example by receiving a measurement from the load scale, comparing the received measurement to a threshold, and switching the functions of the first solid precursor storage container 108 and the second solid precursor storage container 109, for example by controlling the gas flow control valves and heaters of the solid precursor storage containers.

[0106] The precursor may include, for example, molybdenum oxychloride, hafnium chloride, or molybdenum chloride. The second processing gas may include, for example, hydrogen, ammonia, ozone, or water vapor. The purge gas may include, for example, nitrogen or argon. In some embodiments, the precursor includes molybdenum oxychloride, the second processing gas includes ammonia, and the purge gas includes hydrogen. In some embodiments, the precursor includes molybdenum oxychloride, the second processing gas includes hydrogen, and the purge gas includes argon.

[0107] The method may include providing a plurality of substrates in a substrate boat in a semiconductor processing apparatus 101 prior to step S201.

[0108] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0109] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed.

Claims

1. A semiconductor processing apparatus, comprising: A processing chamber configured to receive multiple substrates; An accumulator container in fluid communication with a processing chamber, configured to store precursors in the form of gas; as well as At least two solid precursor storage containers, each configured to receive a gaseous precursor, such that the received gaseous precursor is converted into a solid state within the respective solid precursor storage container, and the solid precursor is converted into a gaseous phase. Each of at least two solid precursor storage containers is in fluid communication with an accumulator container to allow the supply of precursors in gaseous form to the accumulator container.

2. The semiconductor processing apparatus according to claim 1, wherein, Each of the at least two solid precursor storage containers is in fluid communication with a main precursor supply source for providing the precursor in gaseous form.

3. The semiconductor processing apparatus according to claim 1 or 2, wherein, Each of the at least two solid precursor storage containers includes a corresponding heater.

4. The semiconductor processing apparatus according to any one of claims 1 to 3, wherein, Each of the at least two solid precursor storage containers includes a corresponding gas inlet port configured to direct the gaseous precursor into the corresponding solid precursor storage container.

5. The semiconductor processing apparatus according to any one of claims 1 to 4, further comprising: A first gas line is used to provide a fluid connection between the first solid precursor storage container and the accumulator container in the at least two solid precursor storage containers; A second gas line is used to provide a fluid connection between a second solid precursor storage container and an accumulator container in at least two solid precursor storage containers; A first gas flow control valve installed in the first gas pipeline and a second gas flow control valve installed in the second gas pipeline; and The controller is configured to set the first gas flow control valve to the closed state, while substantially simultaneously setting the second gas flow control valve to the open state.

6. The semiconductor processing apparatus according to any one of claims 1 to 5, further comprising: A third gas line is used to provide a fluid connection between the main precursor supply source for providing precursors in gaseous form and the first solid precursor storage container of the at least two solid precursor storage containers. A fourth gas line is used to provide a fluid connection between the main precursor supply source and a second solid precursor storage container in at least two solid precursor storage containers; A third gas flow control valve installed in the third gas line and a fourth gas flow control valve installed in the fourth gas line; and The controller is configured to open the third gas flow control valve while simultaneously closing the fourth gas flow control valve.

7. The semiconductor processing apparatus according to claim 6, further comprising a third gas flow control valve heater for heating the third gas flow control valve and a fourth gas flow control valve heater for heating the fourth gas flow control valve.

8. The semiconductor processing apparatus according to any one of claims 1-7, wherein, The accumulator container includes an accumulator container heater.

9. The semiconductor processing apparatus according to any one of claims 1-8, comprising a fifth gas flow control valve disposed upstream of the accumulator container and configured to control gas flow from any of the at least two solid precursor storage containers into the accumulator container; and a fifth gas flow control valve heater.

10. The semiconductor processing apparatus according to any one of claims 1-9, comprising a sixth gas flow control valve disposed downstream of the accumulator container and configured to control gas flow from the accumulator container into the processing chamber; and a sixth gas flow control valve heater.

11. The semiconductor processing apparatus according to any one of claims 1 to 10, comprising a housing for surrounding at least a portion of the semiconductor processing apparatus located between the main body precursor supply source and the processing chamber, and a housing heater for heating the interior of the housing.

12. A method for supplying a precursor gas to a processing chamber of a semiconductor processing apparatus, the semiconductor processing apparatus comprising: A processing chamber configured to receive multiple substrates; An accumulator container in fluid communication with a processing chamber, configured to store precursors in the form of gas; as well as At least two solid precursor storage containers, each configured to receive a gaseous precursor, such that the received gaseous precursor is converted into a solid state within the respective solid precursor storage container, and the solid precursor is converted into a gaseous phase. Each of at least two solid precursor storage containers is in fluid communication with an accumulator container to allow the supply of gaseous precursors to the accumulator container; The method includes: i) The first solid precursor storage container in at least two solid precursor storage containers receives a precursor in gaseous form and converts the precursor into a solid; ii) The second solid precursor storage container of at least two solid precursor storage containers converts the solid precursor into a gaseous form and provides the gaseous precursor to the accumulator container; and iii) The precursor gas is supplied from the accumulator container to the processing chamber.

13. The method according to claim 12, wherein, Steps i) and ii) are performed almost simultaneously.

14. The method according to claim 12 or 13, wherein, Steps ii) and iii) do not overlap in time.

15. The method according to any one of claims 12 to 14, further comprising, after step iii), causing the second solid precursor storage container to receive the precursor in gaseous form and convert the precursor into a solid state, and causing the first solid precursor storage container to convert the solid precursor into a gaseous form and provide the gaseous precursor to the accumulator container.

16. The method according to any one of claims 12 to 15, wherein, Receiving a gaseous precursor into a solid precursor storage container includes having a main precursor supply source supply the gaseous precursor to the solid precursor storage container.

17. The method according to any one of claims 12 to 16, wherein, The accumulator container includes a pressure sensor and a thermocouple, wherein step iii) includes determining the amount of precursor to be provided to the processing chamber based on data received from the pressure sensor and the thermocouple.

18. The method according to any one of claims 12 to 17, wherein, Step iii) includes closing the input port of the accumulator container such that no additional precursor gas is supplied to the accumulator container while the precursor gas is being supplied to the processing chamber.

19. The method according to any one of claims 12 to 17, wherein, Step iii) includes opening the input port of the accumulator container such that the precursor gas is supplied to the accumulator container while the precursor gas is supplied to the processing chamber.

20. A method for forming layers on a plurality of substrates using a semiconductor processing apparatus according to any one of claims 1 to 11, the method comprising the steps of: The first solid precursor storage container in at least two solid precursor storage containers receives gaseous precursor from the main precursor supply source, while the precursor is supplied from the second solid precursor storage container in at least two solid precursor storage containers to the accumulator container. The precursor is supplied from the accumulator container to the processing chamber, while the first solid precursor storage container receives the gaseous precursor from the main precursor supply source. Purge gas is supplied to the processing chamber, while the first solid precursor storage container receives gaseous precursor from the main precursor supply source, and the second solid precursor storage container supplies gaseous precursor to the accumulator container. A second processing gas is supplied to the processing chamber, while the first solid precursor storage container receives gas precursor from the main precursor supply source, and the second solid precursor storage container supplies gas precursor to the accumulator container. as well as Purge gas is supplied to the processing chamber, while the first solid precursor storage container receives gaseous precursor from the main precursor supply source, and the second solid precursor storage container supplies gaseous precursor to the accumulator container.

21. The semiconductor processing apparatus according to any one of claims 1 to 11 or the method according to any one of claims 12 to 19, wherein, The precursor includes molybdenum.

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