Semiconductor process chamber

Abstract

The embodiment of the invention provides a semiconductor process chamber, and the chamber comprises a sealing cover assembly, a chamber body, a cooling assembly, and a driver. The sealing cover assembly comprises a cover body and a first heating module arranged on the cover body, the cover body is used for sealing the cavity body, the first heating module is used for heating the cover body, the cooling assembly comprises a first cooling module, the first cooling module is arranged above the first heating module, and the first heating module is used for heating the first cooling module. The driver is used for driving the cooling assembly to move so as to adjust the distance between the first cooling module and the first heating module.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technology, and more particularly to a semiconductor process chamber. Background Technology

[0002] After a period of operation, a thick dielectric film accumulates on the inner wall of a semiconductor process chamber's cover. This dielectric film is easily detached under the influence of gravity and plasma bombardment, thus contaminating the semiconductor process chamber. Therefore, periodic cleaning processes are necessary for the semiconductor process chamber. For example, nitrogen trifluoride gas can be remotely excited by a plasma source to etch away the dielectric film on the inner wall of the cover. However, current semiconductor process chamber technologies suffer from a low etching and cleaning rate on the inner wall of the cover. Summary of the Invention

[0003] This application provides a semiconductor process chamber to address the problem of how to improve the etching and cleaning rate of the inner wall of the cover.

[0004] To solve the above-mentioned technical problems, this application is implemented as follows: The semiconductor process chamber provided in this application includes: a capping assembly, a chamber body, a cooling assembly, and a driver; the capping assembly includes a cover and a first heating module disposed on the cover, the cover being used to cover the chamber body, the first heating module being used to heat the cover, the cooling assembly including a first cooling module disposed above the first heating module, and the driver being used to drive the cooling assembly to move, thereby adjusting the distance between the first cooling module and the first heating module.

[0005] Optionally, the first heating module is located above the cover and is used to heat the top of the cover. One of the first heating module and the first cooling module is provided with a first groove, and the other is provided with a first protrusion. The driver can drive the cooling component to move to a first position or a second position. When the cooling component is in the first position, the first protrusion is embedded in the first groove so that the two opposite sides of the first cooling module and the first heating module are in contact. When the cooling component is in the second position, the first protrusion is staggered from the first groove and abuts against the outer peripheral area of ​​the groove opening so that the two opposite sides of the first cooling module and the first heating module are spaced apart.

[0006] Optionally, the driver can also drive the cooling assembly to a third position; the third position is located above the second position.

[0007] Optionally, there are multiple first protrusions, which are circumferentially distributed around the vertical axis of the cooling component, and there are multiple first grooves; when the cooling component is located in the first position, the first protrusions are embedded in the first grooves one by one; when the cooling component is located in the second position, the first protrusions are located between two adjacent first grooves.

[0008] Optionally, the sealing assembly further includes a side RF feed module and a second heating module, and the cooling assembly further includes a second cooling module; the side RF feed module is disposed around the outer periphery of the cover body, and the side RF feed module has at least two side extensions extending along its own circumferential direction, the side extensions protruding in a direction away from the cover body, and a second heating module is sandwiched between two adjacent side extensions, the second heating module being used to heat the outer periphery of the cover body via the side RF feed module, and the second cooling module is disposed around the outer periphery of the side RF feed module; when the cooling assembly is in the first position, the second cooling module is thermally connected to the side RF feed module; when the cooling assembly is in the second position, the second cooling module and the side RF feed module are spaced apart.

[0009] Optionally, the side extension is provided with a first protrusion extending toward the second cooling module, and the second cooling module is provided with a second protrusion extending toward the side RF feed module; when the cooling component is in the first position, the second protrusion is supported by the first protrusion; when the cooling component is in the second position, the second protrusion and the first protrusion are misaligned.

[0010] Optionally, each of the side extensions is provided with the first protrusion, and the orthographic projections of each first protrusion on the cover body do not coincide.

[0011] Optionally, the cover includes a transition portion located on the outer periphery of the top of the cover and on the side of the outer periphery of the cover opposite to the chamber body; the sealing assembly further includes a third heating module, and the cooling assembly further includes a third cooling module; the third heating module is used to heat the transition portion, and the third cooling module is disposed above the third heating module; when the cooling assembly is in the first position, the two opposite sides of the third cooling module and the third heating module are in contact; when the cooling assembly is in the second position, the two opposite sides of the third cooling module and the third heating module are spaced apart.

[0012] Optionally, one of the third heating module and the third cooling module is provided with a second groove, and the other is provided with a second protrusion; when the cooling component is in the first position, the second protrusion is embedded in the second groove so that the two opposite sides of the third cooling module and the third heating module are in contact; when the cooling component is in the second position, the second protrusion is staggered from the second groove, and the second protrusion abuts against the outer peripheral area of ​​the groove opening of the second groove so that the two opposite sides of the third cooling module and the third heating module are spaced apart.

[0013] Optionally, there are multiple second grooves, which are circumferentially distributed around the vertical axis of the cooling component, and multiple second protrusions; when the cooling component is in the first position, the second protrusions are embedded in the second grooves one by one; when the cooling component is in the second position, the second protrusions are located between two adjacent second grooves.

[0014] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects: In the embodiments of this application, when it is necessary to clean the inner wall of the cover, the first heating module can be used to heat the cover to increase its temperature, thereby increasing the reaction rate and thus improving the etching and cleaning rate. During the operation of the first heating module, the first cooling module can be used to cool the cover so that its temperature meets the process requirements.

[0015] Furthermore, during the semiconductor process in the semiconductor process chamber, the first cooling module cools the cover to ensure the temperature of the semiconductor process chamber meets the process requirements. Therefore, the first cooling module needs to cool the cover both during the etching and cleaning processes and during the semiconductor process itself. Generally, the cooling performance of the first cooling module must primarily meet the process requirements during the semiconductor process. This can lead to the first cooling module's cooling performance being too high during the etching and cleaning processes, making it difficult for the cover to reach a sufficiently high temperature.

[0016] Furthermore, by adopting the solution provided in the embodiments of this application, the distance between the first cooling module and the first heating module can be adjusted. When it is necessary to further increase the temperature of the cover, the distance between the first cooling module and the first heating module can be increased, thereby weakening the cooling effect of the first cooling module on the first heating module and improving the heating effect of the first heating module on the cover. In this way, by increasing the etching reaction temperature, the etching and cleaning rate can be improved.

[0017] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 A schematic diagram of a semiconductor process chamber provided for an embodiment of this application; Figure 2 A schematic diagram of a cooling assembly and a capping assembly provided in an embodiment of this application; Figure 3 for Figure 2 The image shows a cross-sectional view of the cooling assembly and the cover assembly. Figure 4 A schematic diagram of a first heating module provided in an embodiment of this application; Figure 5 Figure 4 The top view of the first heating module shown in the figure; Figure 6 Figure 4 A cross-sectional view of the first heating module shown in the figure; Figure 7 A schematic diagram of a first cooling module provided in an embodiment of this application; Figure 8 Figure 7 The top view of the first cooling module shown in the image; Figure 9 Figure 7 A cross-sectional view of the first cooling module shown in the figure; Figure 10 This is a schematic diagram of a first cooling module and a first heating module provided in an embodiment of this application, showing the positional relationship between the first cooling module and the first heating module when the cooling component is in a first position; Figure 11 This is a schematic diagram of a first cooling module and a first heating module provided in an embodiment of this application, showing the positional relationship between the first cooling module and the first heating module when the cooling component is located in the second position; Figure 12 A schematic diagram of a side radio frequency feed module provided in an embodiment of this application; Figure 13 for Figure 12A partial schematic diagram of region A of the side RF feed module is shown in the figure; Figure 14 for Figure 13 A cross-sectional view of region B of the side RF feed module shown in the figure; Figure 15 for Figure 14 The diagram shows the distribution of the first bump. Figure 16 for Figure 13 A cross-sectional view of region C of the side RF feed module shown in the figure; Figure 17 for Figure 13 A cross-sectional view of region D of the side RF feed module shown in the figure; Figure 18 A schematic diagram of a second cooling module provided in an embodiment of this application; Figure 19 for Figure 18 A partial schematic diagram of region E of the second cooling module is shown in the figure; Figure 20 for Figure 19 A cross-sectional view of region F of the second cooling module shown in the figure; Figure 21 for Figure 19 A cross-sectional view of region G of the second cooling module shown in the figure; Figure 22 for Figure 19 A cross-sectional view of region H of the second cooling module shown in the figure; Figure 23 A schematic diagram of a side radio frequency feed module, a second cooling module, and a second heating module provided for embodiments of this application; Figure 24 for Figure 23 A cross-sectional view of region J of the side RF feed module, the second cooling module, and the second heating module is shown. Figure 25 A schematic diagram of a third heating module and a heat-conducting ring provided for an embodiment of this application; Figure 26 for Figure 25 A cross-sectional view of region I of the third heating module and the heat-conducting ring is shown. Figure 27 A schematic diagram of a third cooling module provided in an embodiment of this application; Figure 28 A flowchart illustrating a control method for a semiconductor process chamber provided in an embodiment of this application.

[0020] Explanation of reference numerals in the attached figures: 1- Semiconductor process chamber; 10-Cap assembly; 11-Cap body; 111-Transition section; 12-First heating module; 121-First groove; 13-Side RF feed module; 131-Side extension; 132-First protrusion; 133-First inclined connection; 14-Second heating module; 15-Third heating module; 151-Second groove; 152-Heat-conducting ring; 16-Top RF feed module; 20-chamber body; 30 - Cooling component; 31 - First cooling module; 311 - First protrusion; 32 - Second cooling module; 321 - Second protrusion; 322 - Second inclined connecting part; 33 - Third cooling module; 331 - Second protrusion; 40-Driver. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application specification may have been selected by the applicant at his or her own discretion, and their detailed meanings are explained in the relevant sections of this description.

[0024] Furthermore, this application is required to be understood not only through the actual terms used, but also through the meaning implied by each term.

[0025] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0026] This application provides a semiconductor process chamber. (See reference...) Figures 1 to 27 The semiconductor process chamber 1 provided in this application embodiment includes: a capping assembly 10, a chamber body 20, a cooling assembly 30, and a driver 40.

[0027] The sealing assembly 10 includes a cover 11 and a first heating module 12 disposed on the cover 11. The cover 11 is used to seal the chamber body 20. Thus, by sealing the chamber body 20 with the cover 11, the cover 11 and the chamber body 20 form a reaction chamber. The first heating module 12 is used to heat the cover 11. The cooling assembly 30 includes a first cooling module 31. The first cooling module 31 is disposed above the first heating module 12, and a driver 40 is used to drive the cooling assembly 30 to move, thereby adjusting the distance between the first cooling module 31 and the first heating module 12. It should be noted that the driver 40 can be any device capable of driving the movement of the cooling assembly 30.

[0028] In this way, in the embodiments of this application, when it is necessary to clean the inner wall of the cover 11, the first heating module 12 can be used to heat the cover 11 to increase its temperature, thereby increasing the reaction rate and thus achieving the effect of increasing the etching and cleaning rate. During the operation of the first heating module 12, the first cooling module 31 can be used to cool the cover 11 so that the temperature of the cover 11 meets the process requirements.

[0029] Furthermore, during the semiconductor process in the semiconductor process chamber, the first cooling module 31 can cool the cover 11 to ensure that the temperature of the semiconductor process chamber meets the process requirements. Therefore, the first cooling module 31 needs to cool the cover 11 both during the etching and cleaning processes and during the semiconductor process. Generally, the cooling performance of the first cooling module 31 must primarily meet the process requirements during the semiconductor process. This can lead to excessive cooling performance during the etching and cleaning processes, making it difficult for the cover 11 to reach a sufficiently high temperature.

[0030] Furthermore, by adopting the solution provided in the embodiments of this application, the distance between the first cooling module 31 and the first heating module 12 can be adjusted. When it is necessary to further increase the temperature of the cover 11, the distance between the first cooling module 31 and the first heating module 12 can be increased, thereby reducing the cooling effect of the first cooling module 31 on the cover 11 and improving the heating effect of the first heating module 12 on the cover 11. In this way, by increasing the etching reaction temperature, the etching and cleaning rate can be improved.

[0031] refer to Figure 1 and Figure 3 In some embodiments, the first heating module 12 is located above the cover 11. The first heating module 12 is used to heat the top of the cover 11.

[0032] refer to Figures 4 to 9One of the first heating module 12 and the first cooling module 31 is provided with a first groove 121, and the other is provided with a first protrusion 311. The driver 40 can drive the cooling assembly 30 to move to a first position or a second position.

[0033] Combination Figure 10 With the cooling assembly 30 in the first position, the first protrusion 311 is embedded in the first groove 121, so that the opposite sides of the first cooling module 31 and the first heating module 12 are in contact. Thus, with the opposite sides of the first cooling module 31 and the first heating module 12 in contact, the cooling effect of the first cooling module 31 on the sealing assembly 10 is better. Therefore, when cooling of the sealing assembly 10 is required, the driver 40 can be used to drive the cooling assembly 30 to move to the first position.

[0034] Combination Figure 11 With the cooling assembly 30 in the second position, the first protrusion 311 and the first groove 121 are staggered, and the first protrusion 311 abuts against the outer periphery of the groove opening of the first groove 121, so that the two opposite sides of the first cooling module 31 and the first heating module 12 are spaced apart. In this way, the heat of the sealing assembly 10 is mainly transferred to the first cooling module 31 through the first protrusion 311, so that the cooling effect of the first cooling module 31 on the sealing assembly 10 is moderate.

[0035] In some embodiments, the driver 40 can also drive the cooling component 30 to a third position. The third position is located above the second position. Thus, for example, when the first protrusion 311 is located on the first cooling module 31, and the first protrusion 311 is spaced apart from the first heating module 12, the heat from the cover assembly 10 is indirectly transferred to the first cooling module 31 mainly through heat exchange between the first heating module 12 and the first protrusion 311, thereby further reducing the cooling effect of the first cooling module 31 on the cover assembly 10. Therefore, when it is necessary to rapidly heat the cover 11, the driver 40 can be used to drive the cooling component 30 to the third position.

[0036] refer to Figures 4 to 6 The number of first grooves 121 is multiple. (See reference) Figures 7 to 9 In some embodiments, the number of first protrusions 311 is multiple, and the first protrusions 311 are circumferentially distributed around the vertical axis of the cooling assembly 30. Combined with Figure 10 With the cooling assembly 30 in the first position, the first protrusions 311 are correspondingly embedded in the first grooves 121. Figure 11When the cooling component 30 is in the second position, the first protrusion 311 is located between two adjacent first grooves 121. In this way, by setting multiple first protrusions 311 at intervals, when the cooling component 30 is in the second position, some of the heat from the first heating module 12 can be transferred to the first cooling module 31 more evenly through the first protrusions 311, so that the first cooling module 31 can cool the first heating module 12 more evenly.

[0037] It should be noted that most of the heat from the first heating module 12 is transferred to the cover 11 to increase its temperature, thereby improving the etching and cleaning rate. The first cooling module 31 mainly regulates the heat transferred from the first heating module 12 to the cover 11, ensuring that the temperature of the cover 11 does not become too high and thus meets the requirements of the cleaning process.

[0038] For example, the first protrusion 311 is provided on the side of the first cooling module 31 facing the first heating module 12, and the first groove 121 is provided on the side of the first heating module 12 facing the first cooling module 31.

[0039] refer to Figure 7 For example, there are three groups of first protrusions 311, and each group of first protrusions is evenly distributed circumferentially around the vertical axis of the cooling assembly 30. Each group of first protrusions includes two first protrusions 311. One of the two first protrusions 311 is located near the inner ring, and the other is located near the outer ring. The first protrusion near the inner ring and the first protrusion near the outer ring in each group of first protrusions are staggered in the radial direction of the first cooling module 31, that is, their projections in the radial direction of the first cooling module 31 do not overlap or do not completely overlap.

[0040] It should be noted that the cover assembly 10 also includes a top RF feed module 16. The top RF feed module 16 is used to feed RF signals into the reaction chamber enclosed by the cover 11 and the chamber body 20 during the semiconductor process in the semiconductor process chamber 1, thereby heating the reaction chamber to ensure that its temperature meets process requirements. The semiconductor process described here can be understood as a semiconductor manufacturing process. For example, a semiconductor process can refer to a wafer thin film deposition process.

[0041] It should also be noted that during the semiconductor process in the semiconductor process chamber 1, plasma is generated within the reaction chamber, which heats the top cover 11. During the etching and cleaning process in the semiconductor process chamber 1, a remote plasma source is used to remotely dissociate and deliver cleaning gas into the reaction chamber, thereby cleaning the inner wall of the top cover 11. At this time, there is no plasma inside the reaction chamber, and the top cover 11 needs to be heated by the first heating module 12 to maintain the etching reaction temperature. Since the heating is mainly done by the heating module during the etching and cleaning process in the semiconductor process chamber 1, and the top RF feed module 16 cannot heat the top cover 11, it is necessary to adjust the distance between the first cooling module 31 and the first heating module 12 to reduce the cooling effect of the first cooling module 31, thereby increasing the temperature of the top cover 11 and thus improving the etching and cleaning rate.

[0042] refer to Figure 1 , Figures 12 to 24 In some embodiments, the cover assembly 10 further includes a side RF feed module 13 and a second heating module 14. The cooling assembly 30 further includes a second cooling module 32. The side RF feed module 13 is disposed around the outer periphery of the cover body 11. The side RF feed module 13 has at least two side extensions 131 extending in its own circumferential direction, the side extensions 131 protruding in a direction away from the cover body 11. See details. Figure 24 A second heating module 14 is sandwiched between adjacent side extensions 131. The second heating module 14 is used to heat the outer periphery of the cover 11 via the side radio frequency feed module 13, and the second cooling module 32 is arranged around the outer periphery of the side radio frequency feed module 13.

[0043] With the cooling assembly 30 in the first position, the second cooling module 32 is thermally connected to the side RF feed module 13. In this way, some of the heat from the second heating module 14 can be conducted to the cover 11 via the side RF feed module 13, thereby heating the side of the cover 11. Excess heat from the second heating module 14 can be conducted to the second cooling module 32 via the side RF feed module 13, thus transferring excess heat away and ensuring that the temperature of the side of the cover 11 meets process requirements. With the cooling assembly 30 in the second position, the second cooling module 32 and the side RF feed module 13 are spaced apart.

[0044] Using the solution provided in this application embodiment, during the adjustment of the distance between the first cooling module 31 and the first heating module 12, the distance between the second cooling module 32 and the side RF feed module 13 is adjusted synchronously. When it is necessary to further increase the temperature of the cover 11, the cooling component 30 is positioned in a second position, thereby spacing the second cooling module 32 and the side RF feed module 13. This reduces the cooling effect of the second cooling module 32 on the second heating module 14, thereby increasing the heating effect of the second heating module 14 on the side of the cover 11. This, in turn, increases the etching reaction temperature, thus improving the etching and cleaning rate.

[0045] refer to Figure 24 In some embodiments, the side extension 131 is provided with a first protrusion 132 extending toward the second cooling module 32, and the second cooling module 32 is provided with a second protrusion 321 extending toward the side RF feed module 13. When the cooling assembly 30 is in the first position, the second protrusion 321 is supported by the first protrusion 132. In this way, the heat from the second heating module 14 can be transferred to the second cooling module 32 via the first protrusion 132 and the second protrusion 321. Therefore, in this case, the cooling effect of the second cooling module 32 is better.

[0046] With the cooling assembly 30 in the second position, the second protrusion 321 is offset from the first protrusion 132. Thus, the heat from the second heating module 14 is primarily transferred indirectly to the second cooling module 32 via the gas between the first protrusion 132 and the second protrusion 321. Therefore, in this configuration, the second cooling module 32 carries away less heat. This effectively raises the temperature of the cover 11, ensuring that the temperature of the cover 11 meets the requirements of the cleaning process.

[0047] Furthermore, with the cooling assembly 30 in the third position, the second cooling module 32 is further raised to increase the distance between the second protrusion 321 and the first protrusion 132. Therefore, in this case, the cooling effect of the second cooling module 32 is further reduced. This allows for a better increase in the temperature of the cover 11, thereby improving the etching and cleaning rate.

[0048] refer to Figures 12 to 17 In some embodiments, each side extension 131 is provided with a first protrusion 132, and the orthographic projections of each first protrusion 132 on the cover 11 do not coincide. For example, in region B, the first protrusion 132 is provided on the upper side extension 131. In region B, which is 10 degrees away from region B, the first protrusion 132 is provided on the middle side extension 131. In region D, which is 10 degrees away from region C, the first protrusion 132 is provided on the lower side extension 131.

[0049] In addition, combined Figure 12 and Figure 13 Since the side RF feed module 13 has two layers, upper and lower, each group can have six first protrusions 132 at different heights along the circumferential direction of the side RF feed module 13. Combined with... Figures 13 to 15 Taking the first bump 132 located in region B as an example, there are a total of 6 first bumps 132 with the same height as the first bump 132 located in region B in the circumferential direction of the side RF feed module 13.

[0050] For ease of description, six adjacent first bumps 132 located at different heights are referred to as a group of first bumps. In the embodiments of this application, six groups of first bumps are provided along the circumferential direction of the side RF feed module 13, and the angle occupied by each group of first bumps is 60 degrees.

[0051] Furthermore, during the process of moving the cooling assembly 30 from the first position to the second position using the driver 40, the cooling assembly 30 can first be driven to rise, so that the first protrusion 311 disengages from the first groove 121. Then, the cooling assembly 30 can be driven to rotate 60 degrees along its own axis. Thus, combined with... Figure 11 The first protrusion 311 faces the area enclosed by the two adjacent first grooves 121. Furthermore, since each group of first protrusions occupies an angle of 60 degrees, after the cooling assembly 30 rotates 60 degrees along its own axis, the first protrusion 132 still corresponds to the second protrusion 321. Heat can be indirectly transferred through the air between the first protrusion 132 and the second protrusion 321. Further, the first protrusion 311 can be brought into contact with the area enclosed by the two adjacent first grooves 121 by driving the cooling assembly 30 downwards.

[0052] It should be noted that, in combination Figure 12 Since the upper and lower rings of the side RF feed module 13 are connected by an inclined connecting portion, if a first protrusion 132 is provided at the first inclined connecting portion 133, the first protrusion 132 provided there will cause interference during the rotation of the cooling assembly 30. Therefore, the first inclined connecting portion 133 does not need to be provided with a first protrusion 132. Similarly, in combination with Figure 18 The second protrusion 321 is not required in the second inclined connecting part 322.

[0053] refer to Figure 3 In some embodiments, the cover 11 includes a transition portion 111 located on the outer periphery of the top of the cover 11, and on the side of the outer periphery of the cover 11 opposite to the chamber body 20. In other words, the transition portion 111 is located in the corner region between the top and the outer periphery of the cover 11.

[0054] Combination Figure 1The sealing assembly 10 also includes a third heating module 15, and the cooling assembly 30 also includes a third cooling module 33. The third heating module 15 is used to heat the transition portion 111, and the third cooling module 33 is disposed above the third heating module 15.

[0055] Similar to the adjustment method of the first cooling module 31 and the first heating module 12, when the cooling component 30 is in the first position, the opposite sides of the third cooling module 33 and the third heating module 15 are in contact. When the cooling component 30 is in the second position, the opposite sides of the third cooling module 33 and the third heating module 15 are spaced apart.

[0056] refer to Figure 25 and Figure 27 One of the third heating module 15 and the third cooling module 33 is provided with a second groove 151, and the other is provided with a second protrusion 331. For example, the third heating module 15 may be provided with a second groove 151, and the third cooling module 33 may be provided with a second protrusion 331.

[0057] In some embodiments, when the cooling assembly 30 is in the first position, the second protrusion 331 is embedded in the second groove 151 so that the opposite sides of the third cooling module 33 and the third heating module 15 are in contact. When the cooling assembly 30 is in the second position, the second protrusion 331 and the second groove 151 are staggered, and the second protrusion 331 abuts against the outer peripheral area of ​​the groove opening of the second groove 151 so that the opposite sides of the third cooling module 33 and the third heating module 15 are spaced apart.

[0058] In some embodiments, there are multiple second grooves 151, which are circumferentially distributed around the vertical axis of the cooling assembly 30. There are also multiple second protrusions 331. When the cooling assembly 30 is in a first position, the second protrusions 331 are correspondingly embedded in the second grooves 151. When the cooling assembly 30 is in a second position, the second protrusions 331 are located between two adjacent second grooves 151.

[0059] For example, refer to Figure 25 The number of second grooves 151 can be three, and the three second grooves 151 are evenly distributed around the vertical axis of the cooling assembly 30.

[0060] refer to Figure 25 and Figure 26 In some embodiments, the sealing assembly 10 further includes a heat-conducting ring 152. The heat-conducting ring 152 is disposed between the third heating module 15 and the transition portion 111. The surface of the heat-conducting ring 152 facing the transition portion 111 can contact the transition portion 111. The heat-conducting ring 152 is used to transfer the heat generated by the third heating module 15 to the transition portion 111.

[0061] It should be noted that, exemplarily, the first heating module 12 may include a heating wire. The second heating module 14 and the third heating module 15 may also each include a heating wire. The first cooling module 31, the second cooling module 32, and the third cooling module 33 may be water-cooled cooling modules. Exemplarily, the water-cooled cooling module is provided with cooling water channels, and cooling water can be introduced into the cooling water channels to remove the heat transferred to the water-cooled cooling module, thereby achieving a cooling effect.

[0062] Exemplarily, the actuator 40 may include a linear actuator and a rotary actuator. The linear actuator is used to drive the cooling assembly 30 to move up and down, and the rotary actuator is used to drive the cooling assembly 30 to rotate about its own axis. Exemplarily, the linear actuator may be a device capable of outputting linear driving force, such as a linear motor, a pneumatic cylinder, or a hydraulic cylinder. Exemplarily, the linear actuator may also include a device capable of outputting rotary driving force, such as a rotary motor, a pneumatic motor, or a hydraulic motor, and a transmission mechanism capable of converting rotary motion into linear motion, such as a lead screw drive mechanism or a rack and pinion mechanism. The rotary actuator may be a device such as a rotary motor, a pneumatic motor, or a hydraulic motor.

[0063] For example, the semiconductor process chamber 1 is a high-density plasma chemical vapor deposition (HDPCVD) chamber.

[0064] This application also provides a method for controlling a semiconductor process chamber. The control method for a semiconductor process chamber provided in this application is applied to the semiconductor process chamber 1 provided in this application.

[0065] refer to Figure 28 The semiconductor process chamber control method provided in this application includes: Step 510: Determine whether the semiconductor process chamber requires a cleaning process.

[0066] Step 520: When the cover cleaning process is required in the semiconductor process chamber, the cooling component is placed in the second position, the cover is preheated to the first temperature, and then the cooling component is moved to the third position above the second position to heat the cover to the second temperature and implement the cover cleaning process.

[0067] Step 530: After the cover cleaning process is completed, position the cooling component in the first position.

[0068] With the cooling components in the first position, semiconductor processes can be performed in the semiconductor process chamber.

[0069] In other words, in the embodiments of this application, it can be determined first whether the semiconductor process chamber 1 needs to undergo a cleaning process. If the semiconductor process chamber 1 needs to undergo a cover cleaning process, the cooling component 30 is positioned in the second position, and the cover 11 is preheated to the first temperature.

[0070] For example, the cooling assembly 30 can be raised 5 to 6 centimeters using the driver 40. Further, the cooling assembly 30 can be rotated 60 degrees using the driver 40, so that the first protrusion 311 aligns with the area enclosed by the two adjacent first grooves 121. Further, the cooling assembly 30 can be lowered using the driver 40 until the first protrusion 311 abuts against the area enclosed by the two adjacent first grooves 121. In this way, the heat from the first heating module 12 is mainly transferred to the first cooling module 31 via the first protrusion 311, the heat from the second heating module 14 is mainly transferred to the second cooling module 32 via the first protrusion 132 of the side RF feed module 13, and the heat from the third heating module 15 is mainly transferred to the third cooling module 33 via the second protrusion 331 of the third cooling module 33. Therefore, the cooling effect of the cooling assembly 30 on the sealing assembly 10 is moderate, thus addressing the problem of quickly preheating the cover 11 to a higher temperature.

[0071] Furthermore, after preheating the cover 11 to a suitable temperature, the cooling assembly 30 can be further raised using the driver 40. For example, the cooling assembly 30 can be raised by 5 cm relative to its first position. This further increases the distance between the cooling assembly 30 and the cover assembly 10, thereby further reducing the cooling effect of the cooling assembly 30 on the cover assembly 10. This further increases the temperature of the cover 11, allowing it to be maintained at a higher temperature to improve the etching and cleaning rate.

[0072] Furthermore, after the etching and cleaning process is completed, the cooling assembly 30 can be driven back to the first position using the driver 40. Then, with the cooling assembly 30 in the first position, the semiconductor process chamber 1 can perform semiconductor processes.

[0073] Furthermore, in the embodiments of this application, the cooling component 30 can be positioned in a first position when the semiconductor process chamber does not require a cover cleaning process, thereby preparing for the implementation of the semiconductor process.

[0074] For example, when a semiconductor process is to be performed in the semiconductor process chamber 1, the temperature of the reaction chamber is 100 to 120 degrees Celsius. When a cover cleaning process is to be performed in the semiconductor process chamber 1, the temperature of the cover 11 can be raised to 200 to 300 degrees Celsius during the preheating stage. During the cleaning stage, the temperature of the cover 11 can be maintained at 200 to 300 degrees Celsius.

[0075] Specifically, for example, during the preheating stage, the temperature of the cover 11 gradually increases to about 260 degrees Celsius, while during the cleaning stage, the temperature of the cover 11 can be maintained between 255 degrees Celsius and 270 degrees Celsius. It should be noted that those skilled in the art can also flexibly set the temperature of the cover 11 according to the type of contaminants to be cleaned and the performance of the semiconductor process chamber 1. Therefore, the embodiments of this application do not limit the temperature of the cover 11.

[0076] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0077] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor process chamber (1), characterized in that, include: The cover assembly (10), the chamber body (20), the cooling assembly (30), and the actuator (40); The sealing assembly (10) includes a cover (11) and a first heating module (12) disposed on the cover (11). The cover (11) is used to seal the chamber body (20). The first heating module (12) is used to heat the cover (11). The cooling assembly (30) includes a first cooling module (31). The first cooling module (31) is disposed above the first heating module (12). The driver (40) is used to drive the cooling assembly (30) to move in order to adjust the distance between the first cooling module (31) and the first heating module (12).

2. The semiconductor process chamber (1) according to claim 1, characterized in that, The first heating module (12) is located above the cover (11). The first heating module (12) is used to heat the top of the cover (11). One of the first heating module (12) and the first cooling module (31) is provided with a first groove (121) and the other is provided with a first protrusion (311). The driver (40) can drive the cooling component (30) to move to a first position or a second position. When the cooling component (30) is in the first position, the first protrusion (311) is embedded in the first groove (121) so that the two opposite sides of the first cooling module (31) and the first heating module (12) are in contact; When the cooling component (30) is in the second position, the first protrusion (311) and the first groove (121) are misaligned and the first protrusion (311) abuts against the outer periphery of the groove opening of the first groove (121) so that the two opposite sides of the first cooling module (31) and the first heating module (12) are spaced apart.

3. The semiconductor process chamber (1) according to claim 2, characterized in that, The driver (40) is also capable of driving the cooling assembly (30) to a third position; the third position is located above the second position.

4. The semiconductor process chamber (1) according to claim 2, characterized in that, The number of the first protrusions (311) is multiple, and the first protrusions (311) are circumferentially distributed around the vertical axis of the cooling assembly (30); the number of the first grooves (121) is multiple. When the cooling assembly (30) is in the first position, the first protrusion (311) is correspondingly embedded in the first groove (121). When the cooling assembly (30) is in the second position, the first protrusion (311) is located between two adjacent first grooves (121).

5. The semiconductor process chamber (1) according to claim 2, characterized in that, The capping assembly (10) further includes a side radio frequency feed module (13) and a second heating module (14), and the cooling assembly (30) further includes a second cooling module (32). The side radio frequency feed module (13) is arranged around the outer periphery of the cover (11). The side radio frequency feed module (13) has at least two side extensions (131) extending along its own circumferential direction. The side extensions (131) protrude in a direction away from the cover (11). A second heating module (14) is sandwiched between two adjacent side extensions (131). The second heating module (14) is used to heat the outer periphery of the cover (11) through the side radio frequency feed module (13). The second cooling module (32) is arranged around the outer periphery of the side radio frequency feed module (13). When the cooling assembly (30) is in the first position, the second cooling module (32) is thermally connected to the side RF feed module (13); When the cooling component (30) is located in the second position, the second cooling module (32) and the side radio frequency feed module (13) are spaced apart.

6. The semiconductor process chamber (1) according to claim 5, characterized in that, The side extension (131) is provided with a first protrusion (132) extending toward the second cooling module (32), and the second cooling module (32) is provided with a second protrusion (321) extending toward the side radio frequency feed module (13). When the cooling assembly (30) is in the first position, the second protrusion (321) is supported on the first protrusion (132). When the cooling component (30) is in the second position, the second protrusion (321) is misaligned with the first protrusion (132).

7. The semiconductor process chamber (1) according to claim 6, characterized in that, Each of the side extensions (131) is provided with the first protrusion (132), and the orthographic projections of each of the first protrusions (132) on the cover (11) do not coincide.

8. The semiconductor process chamber (1) according to claim 2, characterized in that, The cover (11) includes a transition portion (111) located on the outer periphery of the top of the cover (11) and on the side of the outer periphery of the cover (11) opposite to the chamber body (20). The capping assembly (10) further includes a third heating module (15), and the cooling assembly (30) further includes a third cooling module (33). The third heating module (15) is used to heat the transition section (111), and the third cooling module (33) is located above the third heating module (15); When the cooling component (30) is in the first position, the third cooling module (33) is in contact with the two opposite sides of the third heating module (15); When the cooling component (30) is in the second position, the third cooling module (33) is spaced apart from the two sides opposite to the third heating module (15).

9. The semiconductor process chamber (1) according to claim 8, characterized in that, One of the third heating module (15) and the third cooling module (33) is provided with a second groove (151), and the other is provided with a second protrusion (331). When the cooling assembly (30) is in the first position, the second protrusion (331) is embedded in the second groove (151) so that the two opposite sides of the third cooling module (33) and the third heating module (15) are in contact; When the cooling component (30) is in the second position, the second protrusion (331) and the second groove (151) are misaligned and the second protrusion (331) abuts against the outer periphery of the groove of the second groove (151) so that the two sides opposite to the third cooling module (33) and the third heating module (15) are spaced apart.

10. The semiconductor process chamber (1) according to claim 9, characterized in that, The number of the second grooves (151) is multiple, and the second grooves (151) are circumferentially distributed around the vertical axis of the cooling assembly (30); the number of the second protrusions (331) is multiple. When the cooling assembly (30) is in the first position, the second protrusion (331) is correspondingly embedded in the second groove (151). When the cooling assembly (30) is in the second position, the second protrusion (331) is located between two adjacent second grooves (151).

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