High-efficiency thin-film gallium arsenide solar cell and preparation method thereof

Abstract

The invention provides an efficient thin-film gallium arsenide solar cell and a preparation method thereof. The solar cell at least comprises a gallium arsenide substrate, a GaAs nucleating layer, a GaInP corrosion barrier layer, a lattice gradient buffer module, a GaInAs cap layer, an AlGaInP top cell, an AlGaInAs / AlGaInP tunnel junction, a GaInAs bottom cell and a GaInAs back cap layer which are sequentially distributed in the thickness direction of the solar cell. The AlGaInP top battery comprises an (AlGa) 1-bInbP emitter region layer and an (AlGa) 1-cIncP base region layer, b is greater than or equal to 0.4 and less than or equal to 1, and c is greater than or equal to 0.4 and less than or equal to 1; the GaInAs bottom cell comprises a Ga1-dIndP emitter region layer and a Ga1-eIneAs base region layer, 0.4 < = d < = 1, and 0.01 < = e < = 0.5. Through band gap optimization and addition of the lattice gradient buffer module, the photoelectric conversion efficiency of the two-junction gallium arsenide solar cell is improved, the typical efficiency of the two-junction solar cell is improved to 30% from 25%-26% at present, the performance index is directly benchmarked with a mainstream three-junction solar cell, and the efficiency of the two-junction gallium arsenide solar cell is greatly improved. And a competitive technical scheme is provided for the application of high-performance and low-cost solar cells.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to a high-efficiency thin-film gallium arsenide solar cell and its preparation method. Background Technology

[0002] In the field of solar cells, gallium arsenide (GaAs)-based materials have attracted widespread attention due to their excellent photoelectric conversion efficiency. To improve spectral utilization, the technological path has evolved from single-junction to multi-junction. Traditional two-junction solar cells typically use a material system that matches the GaAs substrate lattice, forming a bandgap combination of approximately 1.8 eV / 1.4 eV. Although this structure has the potential for relatively simple processing and low cost, its theoretical efficiency is limited by a narrow spectral response range. Furthermore, in actual fabrication, it is constrained by material quality and interface defects, and its efficiency is usually in the range of 25% to 26%, making it difficult to overcome key bottlenecks and meet the higher performance requirements of high-end applications such as aerospace and concentrated photovoltaics.

[0003] In pursuit of higher efficiency, the industry has developed more complex triple-junction and even multi-junction solar cells. By introducing more sub-cells, they achieve more refined utilization of the solar spectrum, increasing efficiency to 30% or higher. However, the increase in the number of layers leads to extremely complex epitaxial growth processes, longer production cycles, and significantly higher material costs. Furthermore, the requirements for substrate lattice matching are more stringent, which to some extent limits the economic viability of large-scale applications.

[0004] Therefore, an important direction for current technological development is to re-examine and optimize the two-junction structure, seeking to break through its efficiency bottleneck through innovative material design and bandgap engineering while retaining its technological and cost advantages. Summary of the Invention

[0005] The purpose of this invention is to provide a high-efficiency thin-film gallium arsenide solar cell and its preparation method to solve the problems in the background art.

[0006] The technical solution adopted in this invention includes: a high-efficiency thin-film gallium arsenide solar cell, which at least comprises, sequentially distributed along the thickness direction of the solar cell: a gallium arsenide substrate, a GaAs nucleation layer, a GaInP etching barrier layer, a lattice gradient buffer module, a GaInAs cap layer, an AlGaInP top cell, an AlGaInAs / AlGaInP tunnel junction, a GaInAs bottom cell, and a GaInAs back cap layer; the AlGaInP top cell includes (AlGa... 1-b In b P-emitter layer and (AlGa) 1-c In c The P-based region has a density of 0.4 ≤ b ≤ 1 and 0.4 ≤ c ≤ 1; the GaInAs bottom cell includes Ga... 1-d Ind P-emitter layer and Ga 1-e In e As base region layer, 0.4≤d≤1, 0.01≤e≤0.5.

[0007] Preferably, the lattice gradient buffer module includes one or more (AlGa) elements distributed along the thickness direction of the solar cell. 1-a In a As a lattice-gradient buffer layer, from the gallium arsenide substrate to the AlGaInP top cell, the In composition in the lattice-gradient buffer module gradually increases, that is, the lattice constant of the lattice-gradient buffer module gradually changes from matching the gallium arsenide substrate to matching the AlGaInP top cell.

[0008] Preferably, the AlGaInP top cell is formed from the gallium arsenide substrate, wherein one (AlGa) 1-a In a In the As lattice gradient buffer layer, the In component a increases linearly, 0≤a≤0.5, and its total thickness is 100nm~5000nm.

[0009] Preferably, the plurality of (AlGa) 1-a In a As lattice-gradient buffer layers each have different In compositions, extending from the gallium arsenide substrate to the AlGaInP top cell, and the plurality of (AlGa) layers... 1-a In a The In composition α of the As lattice-gradient buffer layer increases nonlinearly, 0 ≤ a ≤ 0.5; the (AlGa) 1-a In a The number of As lattice-gradient buffer layers ranges from 3 to 10 layers, each of which is (AlGa). 1-a In a The thickness of the As layer ranges from 30 nm to 500 nm, and multiple AlGa layers are described. 1-a In a The total thickness of the As layer is 90nm~5000nm.

[0010] Preferably, the doping concentration of the lattice gradient buffer module is 1×10⁻⁶. 17 ~1×10 19 cm -3 .

[0011] Preferably, the (AlGa) 1-b In b The doping concentration of the P-emitter layer is 1×10⁻⁶. 17 ~1×10 19 cm -3The thickness ranges from 10nm to 100nm, and the (AlGa) 1-c In c The doping concentration of the P-based region is 1×10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 100nm to 1000nm.

[0012] Preferably, the Ga 1-d In d The doping concentration of the P-emitter layer is 1×10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 30nm to 300nm; the Ga 1-e In e The doping concentration of the As base layer is 1×10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 300nm to 3000nm.

[0013] Preferably, the AlGaInAs / AlGaInP tunnel junction comprises (AlGa) 1-f In f P-layer and (AlGa) 1-g In g As layer, (AlGa) 1-g In g The As layer is located in (AlGa). 1-f In f Between the P layer and the AlGaInP top cell, 0.4 ≤ f ≤ 1, 0.01 ≤ g ≤ 0.5; the (AlGa... 1-f In f The doping concentration of the P layer is 1×10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5 nm to 50 nm; the (AlGa) 1-g In g The doping concentration of the As layer is 1×10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5nm to 50nm.

[0014] Preferably, the doping concentration of the GaAs nucleation layer is 1×10⁻⁶. 17 ~1×10 19 cm -3 cm -3 The thickness ranges from 10nm to 1000nm;

[0015] The GaInP corrosion barrier layer is Ga 1-h In h For material P, 0.4 ≤ h ≤ 1, its doping concentration is 1 × 10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 10nm to 500nm;

[0016] The GaInAs cap layer is Ga 1-x In x As material, 0.01≤x≤0.5, its doping concentration is 1×10⁻⁶. 18 ~1×10 21 cm -3 The thickness ranges from 50nm to 500nm;

[0017] The GaInAs back cap layer is Ga 1-y In y As material, 0.01≤y≤0.5, its doping concentration is 1×10 18 ~1×10 21 cm -3 The thickness ranges from 50nm to 500nm.

[0018] The technical solution of the present invention also includes: a method for preparing the above-mentioned high-efficiency thin-film gallium arsenide solar cell, which includes the following steps:

[0019] A p-type doped GaAs nucleation layer was grown on a gallium arsenide substrate using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 500~700℃.

[0020] An n-type doped GaInP etching barrier layer was grown on a GaAs nucleation layer using MOCVD technology. The n-type dopant was Si, Se or Te, and the growth temperature was 500~700℃.

[0021] A p-type doped lattice gradient buffer module was grown on a GaInP corrosion barrier layer using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 500~700℃.

[0022] An n-type doped GaInAs cap layer was grown on a lattice-gradient buffer module using MOCVD technology. The n-type dopant was Si, Se or Te, and the growth temperature was 550~700℃.

[0023] An AlGaInP top cell was grown on a GaInAs cap layer using MOCVD technology, where: (AlGa...) 1-b In b The P-emitting region is n-type doped, with the n-type dopant being Si, Se, or Te (AlGa).1-c In c The P-based region is p-type doped, with the p-type dopant being Zn, Mg, or C, and the growth temperature is 550~700℃.

[0024] AlGaInAs / AlGaInP tunnel junctions were grown on AlGaInP top cells using MOCVD technology, where: (AlGa...) 1-f In f The p-layer is n-type doped, with the n-type dopant being Si, Se, or Te, or (AlGa). 1-g In g The As layer is p-type doped, and the p-type dopant is Zn, Mg or C, with a growth temperature of 550~700℃.

[0025] GaInAs bottom cells were grown on AlGaInAs / AlGaInP tunnel junctions using MOCVD technology, wherein: Ga 1-d In d The P-emitter layer is n-type doped, with the n-type dopant being Si, Se, or Te, or Ga. 1-e In e The As-based region is p-type doped, with the p-type dopant being Zn, Mg, or C, and the growth temperature being 600~750℃.

[0026] A p-type doped GaInAs back cap layer was grown on a GaInAs bottom cell using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 550~700℃.

[0027] The beneficial effects of this invention are as follows: The core technical advantage of the high-efficiency thin-film gallium arsenide solar cell provided by this invention lies in overcoming the limitations imposed on bandgap selection by traditional two-junction cells due to lattice matching with the gallium arsenide substrate. To explore better spectral utilization and higher efficiency potential, this solution selects a more ideal bandgap configuration of 1.7~1.5eV / 1.3~1.1eV compared to traditional combinations. Since the top cell material achieving this configuration exhibits a certain degree of lattice mismatch with the substrate, this solution introduces a lattice gradient buffer module. Through its gradient In composition design, it effectively relaxes the lattice mismatch stress at the interface and suppresses the propagation of penetrating dislocations into the active region, thus providing a better crystal quality foundation for the cell structure. With this technical support, the cell achieves a significant improvement in photoelectric conversion efficiency, from the current typical level to 30%, while maintaining a relatively simple two-junction structure and good process and cost controllability, demonstrating performance potential comparable to mainstream triple-junction cells. This approach has good compatibility with existing process systems, providing a promising technical route for achieving photovoltaic devices that combine high performance with reasonable cost. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the high-efficiency thin-film gallium arsenide solar cell of the present invention. Detailed Implementation

[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] Reference Appendix Figure 1 This invention provides a high-efficiency thin-film gallium arsenide solar cell and its preparation method. To concisely and clearly introduce the technical solution of this invention, the following will describe each structural layer in the solar cell in the order of design and preparation.

[0031] In the high-efficiency thin-film gallium arsenide solar cell provided in this embodiment of the invention, the solar cell comprises, sequentially along its thickness direction: a gallium arsenide substrate, a GaAs nucleation layer, a GaInP etching barrier layer, a lattice gradient buffer module, a GaInAs cap layer, an AlGaInP top cell, an AlGaInAs / AlGaInP tunnel junction, a GaInAs bottom cell, and a GaInAs back cap layer. When fabricating this solar cell using MOCVD technology:

[0032] The GaAs nucleation layer is p-type doped, with the p-type dopant being Zn, Mg, or C, and the doping concentration being 1 × 10⁻⁶. 17 ~1×10 19 cm -3 cm -3 The thickness ranges from 10nm to 1000nm, and the growth temperature is from 500 to 700℃.

[0033] The GaInP corrosion barrier layer is an n-type doped Ga... 1-h In h P material, 0.4≤h≤1; its n-type dopant is Si, Se or Te, and the doping concentration is 1×10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 10 nm to 500 nm, and the growth temperature is from 500 to 700 °C.

[0034] The lattice-gradient buffer module includes one or more (AlGa) elements distributed along the thickness direction of the solar cell. 1-a In aAs a lattice-gradient buffer layer, from the gallium arsenide substrate to the AlGaInP top cell, the In composition in the lattice-gradient buffer module gradually increases, that is, the lattice constant of the lattice-gradient buffer module gradually changes from matching with the gallium arsenide substrate to matching with the AlGaInP top cell, thereby effectively reducing the through dislocations caused by lattice mismatch and significantly reducing their impact on the active region of the cell.

[0035] More specifically, when the lattice gradient buffer module includes an (AlGa) 1-a In a When using a lattice-gradient buffer layer as the AlGaInP top cell, the AlGaInP layer transitions from the gallium arsenide substrate. 1-a In a In the As lattice gradient buffer layer, the In component a increases linearly, 0≤a≤0.5, and its total thickness is 100nm~5000nm.

[0036] When the lattice gradient buffer module includes multiple (AlGa) 1-a In a When using As lattice-gradient buffer layers, multiple (AlGa) 1- a In a The As lattice-gradient buffer layers have different In compositions, and: from the gallium arsenide substrate to the AlGaInP top cell, multiple (AlGa) layers... 1-a In a The In composition α of the As lattice-gradient buffer layer increases nonlinearly, with 0 ≤ a ≤ 0.5; (AlGa) 1-a In a The number of As lattice-gradient buffer layers ranges from 3 to 10 layers, each (AlGa) 1-a In a The thickness of the As layer ranges from 30nm to 500nm, and there are multiple (AlGa) layers. 1-a In a The total thickness of the As layer is 90nm~5000nm.

[0037] Optionally, the lattice gradient buffer module can be n-type doped or p-type doped, and the doping concentration of the lattice gradient buffer module is 1×10⁻⁶. 17 ~1×10 19 cm -3 The growth temperature is 500~700℃.

[0038] The GaInAs cap layer is n-type doped Ga 1-x In x As material, 0.01≤x≤0.5, its n-type dopant is Si, Se or Te, and the doping concentration is 1×10⁻⁶. 18 ~1×10 21 cm-3 The thickness ranges from 50nm to 500nm, and the growth temperature is from 550 to 700℃.

[0039] AlGaInP top-mounted solar cells include n-type doped (AlGa). 1-b In b P-emitter layer and p-type doped (AlGa) 1-c In c P-based layer, 0.4≤b≤1, 0.4≤c≤1; (AlGa) 1-b In b The n-type dopant of the P-emitter layer is Si, Se, or Te, with a doping concentration of 1 × 10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 10 nm to 100 nm (AlGa). 1-c In c The p-type dopant of the p-based region is Zn, Mg, or C, with a doping concentration of 1 × 10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 100nm to 1000nm, and the growth temperature is from 550 to 700℃.

[0040] AlGaInAs / AlGaInP tunnel junctions include n-type doped (AlGa) alloys. 1-f In f P-layer and p-type doped (AlGa) 1- g In g As layer, 0.4≤f≤1, 0.01≤g≤0.5; (AlGa) 1-f In f The n-type dopant of the P-layer is Si, Se, or Te, with a doping concentration of 1 × 10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5 nm to 50 nm; (AlGa) 1-f In f The p-type dopant of the As layer is Zn, Mg, or C, with a doping concentration of 1 × 10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5nm to 50nm, and the growth temperature is from 550 to 700℃.

[0041] GaInAs bottom cells include n-type doped Ga 1-d In d p-emitter layer and p-type doped Ga 1-e In eAs base region layer, 0.4≤d≤1, 0.01≤e≤0.5; Ga 1-d In d The n-type dopant of the P-emitter layer is Si, Se, or Te, with a doping concentration of 1 × 10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 30nm to 300nm; Ga 1-e In e The p-type dopant of the As base layer is Zn, Mg, or C, with a doping concentration of 1 × 10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 300nm to 3000nm, and the growth temperature is from 600 to 750℃.

[0042] The GaInAs back cap layer is p-type doped Ga. 1-y In y As material, 0.01≤y≤0.5, its p-type dopant is Zn, Mg or C, and the doping concentration is 1×10⁻⁶. 18 ~1×10 21 cm -3 The thickness ranges from 50nm to 500nm, and the growth temperature is from 550 to 700℃.

[0043] The total time required for the growth of the above-mentioned material layers is 3 to 6 hours. The subsequent reverse device process is a well-known technology.

[0044] The core technical advantage of this high-efficiency thin-film gallium arsenide solar cell lies in overcoming the limitations imposed on bandgap selection by traditional two-junction cells due to lattice matching with the gallium arsenide substrate. To explore better spectral utilization and higher efficiency potential, this solution selects a more ideal bandgap configuration of 1.7~1.5 eV / 1.3~1.1 eV compared to traditional combinations. Since the top cell material achieving this configuration exhibits a certain lattice mismatch with the substrate, this solution introduces a lattice gradient buffer module. Through its gradient In composition design, it effectively relaxes the lattice mismatch stress at the interface and suppresses the propagation of penetrating dislocations into the active region, thus providing a better crystal quality foundation for the cell structure. With this technical support, the cell achieves a significant improvement in photoelectric conversion efficiency, from the current typical level to 30%, while maintaining a relatively simple two-junction structure and good process and cost controllability, demonstrating performance potential comparable to mainstream triple-junction cells. This solution has good compatibility with existing process systems, providing a promising technical route for realizing photovoltaic devices with both high performance and reasonable cost.

[0045] It should be understood that the specific embodiments described above are merely illustrative or explanatory of the principles of the invention and do not constitute a limitation thereof. Therefore, any modifications, equivalent substitutions, improvements, etc., made without departing from the spirit and scope of the invention should be included within the protection scope of the invention. Furthermore, the appended claims are intended to cover all variations and modifications falling within the scope and boundaries of the claims, or equivalent forms of such scope and boundaries.

Claims

1. A high-efficiency thin-film gallium arsenide solar cell, characterized in that, The solar cell comprises, at least, the following layers arranged sequentially along its thickness direction: a gallium arsenide substrate, a GaAs nucleation layer, a GaInP etching barrier layer, a lattice gradient buffer module, a GaInAs cap layer, an AlGaInP top cell, an AlGaInAs / AlGaInP tunnel junction, a GaInAs bottom cell, and a GaInAs back cap layer; the AlGaInP top cell includes (AlGa...) 1-b In b P-emitter layer and (AlGa) 1-c In c The P-based region has a density of 0.4 ≤ b ≤ 1 and 0.4 ≤ c ≤ 1; the GaInAs bottom cell includes Ga... 1-d In d P-emitter layer and Ga 1-e In e As base region layer, 0.4≤d≤1, 0.01≤e≤0.

5.

2. The high-efficiency thin-film gallium arsenide solar cell according to claim 1, characterized in that, The lattice gradient buffer module includes one or more (AlGa) elements distributed along the thickness direction of the solar cell. 1-a In a As a lattice-gradient buffer layer, from the gallium arsenide substrate to the AlGaInP top cell, the In composition in the lattice-gradient buffer module gradually increases, that is, the lattice constant of the lattice-gradient buffer module gradually changes from matching the gallium arsenide substrate to matching the AlGaInP top cell.

3. The high-efficiency thin-film gallium arsenide solar cell according to claim 2, characterized in that, From the gallium arsenide substrate to the AlGaInP top cell, the one (AlGa) 1-a In a In the As lattice gradient buffer layer, the In component a increases linearly, 0≤a≤0.5, and its total thickness is 100nm~5000nm.

4. The high-efficiency thin-film gallium arsenide solar cell according to claim 2, characterized in that, The multiple (AlGa) 1- a In a As lattice-gradient buffer layers each have different In compositions, extending from the gallium arsenide substrate to the AlGaInP top cell, and the plurality of (AlGa) layers... 1-a In a The In composition α of the As lattice-gradient buffer layer increases nonlinearly, 0 ≤ a ≤ 0.5; the (AlGa) 1-a In a The number of As lattice-gradient buffer layers ranges from 3 to 10 layers, each of which is (AlGa). 1-a In a The thickness of the As layer ranges from 30 nm to 500 nm, and multiple AlGa layers are described. 1-a In a The total thickness of the As layer is 90nm~5000nm.

5. The high-efficiency thin-film gallium arsenide solar cell according to any one of claims 1-4, characterized in that, The doping concentration of the lattice gradient buffer module is 1×10⁻⁶. 17 ~1×10 19 cm -3 .

6. The high-efficiency thin-film gallium arsenide solar cell according to claim 5, characterized in that, The (AlGa) 1-b In b The doping concentration of the P-emitter layer is 1×10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 10nm to 100nm, and the (AlGa) 1-c In c The doping concentration of the P-based region is 1×10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 100nm to 1000nm.

7. The high-efficiency thin-film gallium arsenide solar cell according to claim 5, characterized in that, The Ga 1-d In d The doping concentration of the P-emitter layer is 1×10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 30nm to 300nm; the Ga 1-e In e The doping concentration of the As base layer is 1×10⁻⁶. 16 ~1×10 18 cm -3 The thickness ranges from 300nm to 3000nm.

8. The high-efficiency thin-film gallium arsenide solar cell according to any one of claims 1-4 and 6-7, characterized in that, The AlGaInAs / AlGaInP tunnel junction includes (AlGa) 1-f In f P-layer and (AlGa) 1-g In g As layer, (AlGa) 1-g In g The As layer is located in (AlGa). 1-f In f Between the P layer and the AlGaInP top cell, 0.4 ≤ f ≤ 1, 0.01 ≤ g ≤ 0.5; the (AlGa... 1-f In f The doping concentration of the P layer is 1×10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5 nm to 50 nm; the (AlGa) 1-g In g The doping concentration of the As layer is 1×10⁻⁶. 19 ~1×10 21 cm -3 The thickness ranges from 5nm to 50nm.

9. The high-efficiency thin-film gallium arsenide solar cell according to claim 8, characterized in that, The doping concentration of the GaAs nucleation layer is 1×10⁻⁶. 17 ~1×10 19 cm -3 cm -3 The thickness ranges from 10nm to 1000nm; The GaInP corrosion barrier layer is Ga 1-h In h For material P, 0.4 ≤ h ≤ 1, its doping concentration is 1 × 10⁻⁶. 17 ~1×10 19 cm -3 The thickness ranges from 10nm to 500nm; The GaInAs cap layer is Ga 1-x In x As material, 0.01≤x≤0.5, its doping concentration is 1×10⁻⁶. 18 ~1×10 21 cm -3 The thickness ranges from 50nm to 500nm; The GaInAs back cap layer is Ga 1-y In y As material, 0.01≤y≤0.5, its doping concentration is 1×10 18 ~1×10 21 cm -3 The thickness ranges from 50nm to 500nm.

10. A method for preparing a high-efficiency thin-film gallium arsenide solar cell according to any one of claims 1-9, characterized in that, Including the following steps: A p-type doped GaAs nucleation layer was grown on a gallium arsenide substrate using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 500~700℃. An n-type doped GaInP etching barrier layer was grown on a GaAs nucleation layer using MOCVD technology. The n-type dopant was Si, Se or Te, and the growth temperature was 500~700℃. A p-type doped lattice gradient buffer module was grown on a GaInP corrosion barrier layer using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 500~700℃. An n-type doped GaInAs cap layer was grown on a lattice-gradient buffer module using MOCVD technology. The n-type dopant was Si, Se or Te, and the growth temperature was 550~700℃. An AlGaInP top cell was grown on a GaInAs cap layer using MOCVD technology, where: (AlGa...) 1-b In b The P-emitting region is n-type doped, with the n-type dopant being Si, Se, or Te (AlGa). 1-c In c The P-based region is p-type doped, with the p-type dopant being Zn, Mg, or C, and the growth temperature is 550~700℃. AlGaInAs / AlGaInP tunnel junctions were grown on AlGaInP top cells using MOCVD technology, where: (AlGa...) 1-f In f The p-layer is n-type doped, with the n-type dopant being Si, Se, or Te, or (AlGa). 1-g In g The As layer is p-type doped, and the p-type dopant is Zn, Mg or C, with a growth temperature of 550~700℃. GaInAs bottom cells were grown on AlGaInAs / AlGaInP tunnel junctions using MOCVD technology, wherein: Ga 1-d In d The P-emitter layer is n-type doped, with the n-type dopant being Si, Se, or Te, or Ga. 1-e In e The As-based region is p-type doped, with the p-type dopant being Zn, Mg, or C, and the growth temperature being 600~750℃. A p-type doped GaInAs back cap layer was grown on a GaInAs bottom cell using MOCVD technology. The p-type dopant was Zn, Mg or C, and the growth temperature was 550~700℃.

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