Device for detecting leakage of molten polycrystalline silicon

Abstract

The present disclosure relates to an apparatus for detecting leakage of molten polysilicon. According to one embodiment of the present disclosure, the apparatus for detecting leakage of molten polycrystalline silicon may include: a crucible configured to melt polycrystalline silicon; a heater configured to heat the crucible; a tray disposed below the crucible and configured to accommodate molten polysilicon leaked from the crucible; and a weighing sensor configured to detect a weight of the tray.

Description

Technical Field

[0001] This disclosure relates to an apparatus for detecting leaks in molten polysilicon. Background Technology

[0002] Single-crystal silicon is used as the basic material for most semiconductor components, and these materials are manufactured as single crystals with high purity, and one of these manufacturing methods is the Czochralski process.

[0003] The Czochralski method involves placing solid polycrystalline silicon material in a crucible inside a chamber and melting the silicon by heating a substrate with a heater. While a single-crystal seed crystal rotates in contact with the molten silicon, it is simultaneously pulled upwards by a wire, growing an ingot with a predetermined diameter through a shoulder-growing process that increases the diameter to near the target ingot diameter. One type of Czochralski method, the Continuous Czochralski (CCz) method, involves continuously growing an ingot by continuously adding or injecting solid polycrystalline silicon or molten silicon into the crucible while replenishing the consumed molten silicon.

[0004] However, the molten polycrystalline silicon melted by the heater in the crucible may leak out of the crucible due to cracking, overflow, backflow, etc.

[0005] Therefore, there is a need to research a technology that can immediately detect leaks in molten polysilicon from the crucible, notify workers, and allow for preventative measures.

[0006] The aforementioned background technology refers to the technical information possessed by the inventors in order to derive this disclosure, or the technical information obtained by the inventors in the process of deriving this disclosure, and is not necessarily considered to be prior art disclosed to the public before the submission of this disclosure. Summary of the Invention

[0007] Technical issues

[0008] This disclosure aims to provide an apparatus for detecting leaks in molten polysilicon. The technical problems to be solved by this disclosure are not limited to those described above, and other unmentioned technical problems and advantages will become apparent from the following description and from embodiments thereof. Furthermore, it will be understood that the problems and advantages to be solved by this disclosure can be achieved by the means set forth in the claims and combinations thereof.

[0009] Technical solution

[0010] As a technical means to achieve the above-mentioned technical problems, a first aspect of this disclosure provides an apparatus for detecting leakage of molten polysilicon, the apparatus comprising: a crucible configured to melt polysilicon, a heater configured to heat the crucible, a tray disposed below the crucible and configured to contain molten polysilicon leaking from the crucible, and a weighing sensor configured to detect the weight of the tray.

[0011] In addition, other methods and systems for implementing the present disclosure may be provided, as well as computer-readable recording media storing computer programs for performing the methods.

[0012] Other aspects, features, and advantages, in addition to those described above, will become apparent from the following drawings, claims, and detailed description of this disclosure.

[0013] Beneficial effects

[0014] According to the above technical solution of this disclosure, in the event of leakage of molten polycrystalline silicon from the crucible, detection can be performed immediately.

[0015] Furthermore, this disclosure enables an immediate response to leaks by generating alarms and cutting off power when molten polysilicon leaks are detected.

[0016] Furthermore, this disclosure can prevent damage to the apparatus used for growing silicon single crystals caused by leakage of molten polycrystalline silicon. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of an apparatus for detecting leaks in molten polysilicon according to one embodiment.

[0018] Figure 2 This is a schematic diagram illustrating an outlet arranged on one side of a crucible, according to one embodiment.

[0019] Figure 3 This is a schematic diagram of an orthographic projection illustrating the crucible, outlet, and tray according to one embodiment.

[0020] Figure 4 This is a schematic diagram of an apparatus for detecting leaks in molten polysilicon according to one embodiment, the apparatus including a controller.

[0021] Figure 5 This is a flowchart illustrating a method for controlling an alarm generator and a power supply unit via a controller, according to one embodiment. Detailed Implementation

[0022] This disclosure relates to an apparatus for detecting leaks in molten polysilicon. According to one embodiment of this disclosure, the apparatus for detecting leaks in molten polysilicon may include: a crucible configured to melt polysilicon, a heater configured to heat the crucible, a tray disposed below the crucible and configured to contain molten polysilicon leaking from the crucible, and a weighing sensor configured to detect the weight of the tray.

[0023] In addition, the leak detection device further includes a controller configured to control the operation of the leak detection device based on the weight detected by the weighing sensor.

[0024] In addition, the device includes an alarm generator connected to the controller and configured to generate an alarm.

[0025] In addition, the device includes a solid polysilicon feeder configured to supply polysilicon to a crucible and a power supply unit connected to the solid polysilicon feeder, heater, and controller and configured to supply power to the solid polysilicon feeder and heater.

[0026] Furthermore, the controller controls the alarm generator to generate a first alarm when the weight detected by the weighing sensor is greater than or equal to a first threshold, and controls the alarm generator to generate a second alarm when the weight detected by the weighing sensor is greater than or equal to a second threshold, wherein the first alarm and the second alarm have different sound effects.

[0027] Furthermore, if the weight detected by the weighing sensor is greater than or equal to the third threshold, the controller controls the power supply unit to cut off the power supply to the solid polysilicon feeder and heater.

[0028] In addition, the first threshold is 3% of the weight of the polysilicon supplied to the crucible, and the second threshold is 5% of the weight of the polysilicon supplied to the crucible.

[0029] In addition, the third threshold is 10% of the weight of the polycrystalline silicon supplied to the crucible.

[0030] In addition, the leak detection device also includes a chamber arranged below the crucible and a hot zone structure configured to protect the chamber and containing heat insulation material, wherein a tray covers the hot zone structure between the crucible and the hot zone structure.

[0031] In addition, the crucible includes an outlet extending outward from one side of the crucible, wherein the end of the outlet faces downward and is positioned at a height above the center of the crucible.

[0032] In addition, the leak detection device includes the orthographic projection of the tray, which includes the orthographic projection of the crucible and the outlet.

[0033] Invention Embodiments

[0034] The advantages, features, and methods of achieving these advantages and features of this disclosure will become apparent from the following detailed description of embodiments with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments set forth herein, but may be embodied in many different forms and should be understood to include all modifications, equivalents, or alternatives within the spirit and technical scope of this disclosure. The following presentation of embodiments is intended to make this disclosure complete and to fully convey the scope of this disclosure to those skilled in the art. In describing this disclosure, detailed descriptions of related technologies have been omitted where such descriptions might obscure the nature of this disclosure.

[0035] The terminology used in this application is for describing specific embodiments only and is not intended to limit the scope of this disclosure. Unless the singular form has a distinct meaning in the context, it encompasses the plural form. In this application, it should be understood that terms such as “comprising” or “having” are intended to indicate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in this specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, actions, components, parts, or combinations thereof may be present or added.

[0036] Some embodiments of this disclosure can be described as functional block components and various processing steps. Such functional blocks can be implemented, in part or in whole, by any number of hardware and / or software components configured to perform a specified function. For example, functional blocks of this disclosure can be implemented by one or more microprocessors or circuit configurations for a given function. For example, functional blocks of this disclosure can be implemented by various programming languages ​​or scripting languages. Functional blocks can be implemented by algorithms that execute on one or more processors. Furthermore, this disclosure can employ conventional techniques for electronic configuration, signal processing, and / or data processing, etc. The terms “mechanism,” “element,” “means,” and “configuration” are used broadly and are not limited to mechanical or physical configurations.

[0037] Furthermore, the connecting lines or connectors between components shown in the accompanying drawings are intended to represent exemplary functional relationships and / or physical or logical connections. In actual devices, connections between components may be represented by various alternative or additional functional relationships, physical connections, or logical connections.

[0038] In this specification, when describing a leak detection device according to one embodiment of the present disclosure, components unrelated to the content of the present disclosure are not shown in detail or are omitted for the sake of simplifying the drawings, and the leak detection device according to the present disclosure will be described mainly based on the content related to the spirit of the present disclosure.

[0039] The contents of this disclosure will be described in detail below with reference to the accompanying drawings.

[0040] Figure 1 This is a schematic diagram of an apparatus 100 for detecting leaks in molten polysilicon according to one embodiment. Figure 2 This is a schematic diagram illustrating an outlet arranged on one side of a crucible, according to one embodiment. Figure 3 This is a schematic diagram of an orthographic projection illustrating the crucible, outlet, and tray according to one embodiment.

[0041] First, refer to Figure 1 The device 100 for detecting leakage of molten polysilicon may include: a crucible 10 configured to melt solid polysilicon; a heater 20 configured to heat the crucible 10; a tray 30 disposed below the crucible 10 and configured to contain molten polysilicon leaking from the crucible 10; and a weighing sensor 40 configured to detect the weight of the tray 30.

[0042] The crucible 10 can contain molten polycrystalline silicon. In some embodiments, the crucible 10 can typically be formed in an inverted dome shape. In other embodiments, the crucible 10 can have various shapes, such as a cylindrical shape.

[0043] The crucible may contain quartz material. The crucible 10 may contain various materials that are heat-resistant at temperatures of about 1400°C or higher and can withstand rapid temperature changes.

[0044] A support member 60 may be arranged on the lower side of the crucible 10 to support the crucible 10. For example, the support member 60 may typically be formed in a cylindrical shape. The upper end of the support member 60 may be formed in a shape corresponding to the lower end of the crucible, so that the crucible 10 can be arranged on the upper end of the support member 60.

[0045] In other embodiments, the crucible 10 may have an outlet 11 on one side through which molten polysilicon is discharged to the outside of the crucible 10.

[0046] An outlet 11 arranged on one side of the crucible 10 allows the molten polycrystalline silicon contained in the crucible 10 to flow out to the single crystal growth furnace 50. In this respect, the side of the outlet 11 that contacts the crucible 10 is referred to as the first end, and the side opposite to the first end is referred to as the second end.

[0047] Reference Figure 2 The molten polycrystalline silicon must be filled into crucible 210 to a predetermined height or higher, so that the molten polycrystalline silicon can be conveyed to the single crystal growth furnace through outlet 220. The efficiency of the ingot growth operation using the molten silicon conveyed to the single crystal growth furnace can vary depending on the arrangement height of outlet 220.

[0048] For example, if the outlet 220 is positioned below the center height 230 of the crucible 210, the molten polycrystalline silicon may not fill half the height of the crucible 210 and may be conveyed to the single crystal growth furnace. This could increase the time required to melt the solid polycrystalline silicon (melting time), thereby reducing the efficiency of the ingot growth operation.

[0049] However, in the apparatus for detecting leaks in molten polysilicon, the outlet 220 can be positioned above the center height 230 of the crucible 210, and therefore the molten polysilicon must be filled to more than half the height of the crucible 210 in order to be conveyed to the single crystal growth furnace. Thus, the apparatus for detecting leaks in molten polysilicon can reduce the time required to melt solid polysilicon and improve the efficiency of ingot growth operations.

[0050] In some other embodiments, the first end 221 of the outlet 220 may be positioned above the second end 222 of the outlet 220. Therefore, even without the process of tilting the crucible 210, molten polysilicon can be conveyed to the single crystal growth furnace when a certain amount of molten polysilicon has filled the crucible 210.

[0051] Refer again Figure 1 The single crystal growth furnace 50 can grow ingots using molten polycrystalline silicon fed from the crucible 10. For example, the single crystal growth furnace 50 can have an internal space maintained under vacuum. An internal space can be formed to grow ingots within it.

[0052] The single crystal growth furnace 50 may include a vacuum pump (not shown) and an inert gas supply unit (not shown). The vacuum pump can maintain the internal space under a vacuum. In other embodiments, the inert gas supply unit can supply inert gas to the internal space.

[0053] Heater 20 can supply heat to crucible 10 to melt the solid polycrystalline silicon inside crucible 10.

[0054] For example, heater 20 can supply heat to crucible 10 using a coil that receives electricity and generates a magnetic field. In other embodiments, heater 20 can be implemented not only by induction heating but also by resistance heating in which electricity is directly supplied and heat is directly generated.

[0055] In other embodiments, the heater 20 may be implemented in the form of surrounding the crucible 10.

[0056] Tray 30 may be positioned below crucible 10 and configured to contain molten polycrystalline silicon leaking from crucible 10. For example, tray 30 may comprise a quartz material. In other embodiments, tray 30 may comprise various materials that are heat-resistant at temperatures of about 1400°C or higher and can withstand rapid temperature changes.

[0057] The load cell 40 can be connected to the pallet 30 and configured to measure the weight of the pallet 30. For example, the load cell 40 can measure the weight of the pallet 30 per unit time.

[0058] In related technologies, a weighing sensor for detecting leakage of molten polysilicon from crucible 10 is directly connected to crucible 10. The problem with this is that due to the weight change caused by the solid polysilicon introduced into crucible 10 and the molten polysilicon conveyed to the single crystal growth furnace 50 through outlet 11 of crucible 10, it is difficult to accurately detect leakage of molten polysilicon. However, a device 100 for detecting leakage of molten polysilicon can immediately detect the weight of the molten silicon falling onto tray 30 using weighing sensor 40. Therefore, it is possible to accurately detect leakage of molten polysilicon without considering the weight change caused by the solid polysilicon introduced into crucible 10 and the molten polysilicon conveyed to the single crystal growth furnace 50 through outlet 11 of crucible 10.

[0059] In related technologies, the load cell 40 is attached to the crucible 10. Therefore, in the event of leakage of molten polysilicon from the crucible 10, the leaking high-temperature molten polysilicon flows through the crucible 10 and the support 60 supporting the crucible 10, thereby damaging not only the load cell 40 configured to measure the weight of the crucible 10, but also the apparatus used for ingot growth. However, in the apparatus 100 for detecting leakage of molten polysilicon, the leaking molten polysilicon from the crucible 10 or outlet 11 can be directly contained in the tray 30, thus preventing the problems of the related technologies.

[0060] Reference Figure 3 The orthographic projection of tray 310 may include the orthographic projections of crucible 320 and outlet 330.

[0061] For example, leakage of molten polysilicon may occur not only due to the cracking of crucible 320 and leakage from crucible 320, but also due to the cracking of outlet 330, the cracking of the part connecting outlet 330 and crucible 320, and the backflow that occurs during the transport of molten polysilicon through outlet 330.

[0062] For example, if the orthographic projection of tray 310 includes the orthographic projection of crucible 320 but does not include the orthographic projection of outlet 330, leakage of molten polysilicon from outlet 330 may not be detected.

[0063] However, the orthographic projection of the tray 310 of the device for detecting leaks in molten polysilicon can include the orthographic projection of the crucible 320 and the outlet 330 arranged on one side of the crucible 320, and thus can detect leaks in molten polysilicon that occur under various conditions.

[0064] Refer againFigure 1 The hot zone structure 70 can be arranged below the tray 30 and configured to protect the apparatus used for growing the ingot. For example, the hot zone structure 70 may include elements such as heat-insulating tubes, heat-insulating rings, top rings, and heat-insulating shrouds, which are heat-insulating structures arranged to maintain the interior of the processing chamber at a constant temperature. In cases where the ingot growth process is repeated multiple times, molten polycrystalline silicon may splash, or inert gases containing quartz components may come into contact with the surfaces of the processing chamber in a gaseous state.

[0065] Molten polycrystalline silicon is maintained at temperatures of 1000°C or higher, and therefore high-temperature-related failures may occur within the processing chamber. The hot zone structure 70 may include insulating material to protect the apparatus used for ingot growth, such as the processing chamber. For example, the hot zone structure 70 may include graphite material.

[0066] Figure 4 The diagram shows an apparatus 400 for detecting leaks in molten polysilicon according to one embodiment, the apparatus 400 including a controller.

[0067] Reference Figure 4 The device 400 for detecting leaks of molten polysilicon can detect molten polysilicon leaking from the crucible 410. In this embodiment, the device 400 for detecting leaks of molten polysilicon can be used with... Figure 1 It is the same as the device 100 used to detect leaks in molten polysilicon.

[0068] The apparatus 400 for detecting leakage of molten polysilicon may include a crucible 410 configured to melt solid polysilicon, a heater 420 configured to heat the crucible 410, a tray 430 disposed below the crucible 410 and configured to contain molten polysilicon leaking from the crucible 410, and a weighing sensor 440 configured to detect the weight of the tray 430.

[0069] In other embodiments, the device 400 for detecting leaks in molten polysilicon may include a solid polysilicon feeder 490 configured to supply solid polysilicon to a crucible 410, a controller 180, a power supply unit 481, and an alarm generator 482.

[0070] The crucible 410 can contain molten polycrystalline silicon. In some embodiments, the crucible 410 can typically be formed in an inverted dome shape. In other embodiments, the crucible 410 can have various shapes, such as a cylindrical shape.

[0071] A support member 460 configured to support the crucible 410 may be arranged on the lower side of the crucible 410. For example, the support member 460 may typically be formed in a cylindrical shape. The upper end of the support member 460 may be formed in a shape corresponding to the lower end of the crucible, so that the crucible 410 can be arranged on the upper end of the support member 460.

[0072] In other embodiments, the crucible 410 may have an outlet 411 on one side through which molten polycrystalline silicon is discharged to the outside of the crucible 410. The outlet 411 arranged on one side of the crucible 410 allows the molten polycrystalline silicon contained in the crucible 410 to flow out to the single crystal growth furnace 450.

[0073] The single crystal growth furnace 450 can grow ingots using molten polycrystalline silicon fed from the crucible 410. For example, the single crystal growth furnace 450 can have an internal space maintained under vacuum. An internal space can be formed to grow ingots within it.

[0074] Heater 420 can supply heat to crucible 410 to melt the solid polycrystalline silicon inside crucible 410. For example, heater 420 can supply heat to crucible 410 using a coil that receives electricity and generates a magnetic field. In other embodiments, heater 420 can be implemented not only by induction heating but also by resistance heating in which electricity is directly supplied and heat is directly generated.

[0075] Tray 430 may be arranged below crucible 410 and configured to contain molten polysilicon leaking from crucible 410. For example, tray 430 may contain quartz material.

[0076] The load cell 440 can be connected to the pallet 430 and configured to measure the weight of the pallet 430. For example, the load cell 440 can measure the weight of the pallet 430 per unit time.

[0077] For example, the orthographic projection of tray 430 may include the orthographic projections of crucible 410 and outlet 411.

[0078] The hot zone structure 470 may be arranged below the tray 430 and configured to protect the apparatus used for growing the ingot. For example, the hot zone structure 470 may include elements such as heat insulation tubes, heat insulation rings, top rings, and heat insulation shrouds, which are heat insulation structures arranged to maintain the interior of the processing chamber at a constant temperature.

[0079] The solid polysilicon feeder 490 can be configured to supply solid polysilicon to the crucible 410 in the amount required for ingot growth. For example, the solid polysilicon feeder 490 may include a fixed-volume supply unit (not shown).

[0080] For example, the fixed quantity supply unit can measure the weight of solid polysilicon and supply a precise weight of solid polysilicon to crucible 410.

[0081] The controller 480 can be electrically connected to components included in the device 400 for detecting leaks in molten polysilicon. For example, the controller 480 can be electrically connected to the solid polysilicon feeder 490, the power supply unit 481, the alarm generator 482, and the weighing sensor.

[0082] The controller 480 can determine the weight of the solid polysilicon supplied to the crucible 410 via the solid polysilicon feeder 490. In other embodiments, the controller 480 can receive the weight of the tray 430 detected by the weighing sensor 440. For example, if the weighing sensor 440 detects a change in weight, the controller 480 can detect leakage of molten polysilicon from the crucible 410.

[0083] The controller 480 may be specifically designed and configured for this disclosure, or may be known and available to those skilled in the art of computer software. Instances of the controller 480 may include not only machine language code, such as machine language code generated by a compiler, but also high-level language code that can be executed by a computer using an interpreter or the like.

[0084] The power supply unit 481 can supply power to the components included in the device 400 for detecting leaks in molten polysilicon. For example, the power supply unit 481 can supply power to the solid polysilicon feeder 490, heater 420, weighing sensor 440, controller 480, and single crystal growth furnace 450.

[0085] Alarm generator 482 can generate an alarm when a leak of molten polysilicon is detected. For example, an operator can hear the alarm generated by alarm generator 482 and take immediate action in response to the leak of molten polysilicon.

[0086] For example, alarm generator 482 can generate alarms with various sound effects. For instance, different alarm sound effects can alert the user to the severity of a molten polysilicon leak.

[0087] In the event of a detected leak of molten polysilicon, the controller 480 can control the alarm generator 482 to generate an alarm. For example, the controller 480 can control the alarm generator 482 to generate alarms with different sound effects depending on the degree of weight change in the load cell 440.

[0088] For example, if the weight detected by the weighing sensor 440 exceeds 500 g, the controller 480 may control the alarm generator 482 to generate a first alarm. In other embodiments, if the weight detected by the weighing sensor 440 is at least 3% of the weight of the polysilicon supplied to the crucible 410, the controller 480 may control the alarm generator 482 to generate a first alarm.

[0089] For example, if the weight detected by the weighing sensor 440 exceeds 1000 g, the controller 480 may control the alarm generator 482 to generate a second alarm. In other embodiments, if the weight detected by the weighing sensor 440 is at least 5% of the weight of the polysilicon supplied to the crucible 410, the controller 480 may control the alarm generator 482 to generate a second alarm.

[0090] In other embodiments, if a leak of molten polysilicon is detected, the controller 480 can control the power supply unit 481 to block the power supply to the solid polysilicon feeder 490 and the heater 420.

[0091] For example, if the weight detected by the weighing sensor 440 is at least 10% of the weight of the polysilicon supplied to the crucible 410, the controller 480 can control the power supply unit 481 to block the power supply to the solid polysilicon feeder 490 and the heater 420.

[0092] Figure 5 This is a flowchart illustrating a method for controlling an alarm generator and a power supply unit via a controller, according to one embodiment.

[0093] Reference Figure 5 Methods for detecting leaks in molten polysilicon include Figure 4 The operations in the controller 480 shown are executed sequentially in time. Therefore, even if details are omitted below, regarding... Figure 2 The foregoing description of the controller 480 shown herein can also be applied to Figure 5 A method for detecting leakage in molten polysilicon.

[0094] In operation 510, if the weight detected by the weighing sensor is greater than or equal to a first threshold, the controller can control the alarm generator to generate a first alarm.

[0095] For example, if the weight detected by the weighing sensor exceeds 500 g, the controller can control the alarm generator to produce a first alarm.

[0096] In other implementations, the controller may control an alarm generator to generate a first alarm if the weight detected by the weighing sensor is at least 3% of the weight of the polycrystalline silicon supplied to the crucible.

[0097] In operation 520, if the weight detected by the weighing sensor is greater than or equal to the second threshold, the controller can control the alarm generator to generate a second alarm.

[0098] For example, if the weight detected by the weighing sensor exceeds 1000 g, the controller can control the alarm generator to produce a second alarm.

[0099] In other implementations, if the weight detected by the weighing sensor is at least 5% of the weight of the polysilicon supplied to the crucible, the controller can control the alarm generator to generate a second alarm.

[0100] In operation 530, if the weight detected by the weighing sensor is greater than or equal to the third threshold, the controller can control the power supply unit to cut off the power supply to the solid polysilicon feeder and heater.

[0101] For example, if the weight detected by the weighing sensor is at least 10% of the weight of the polysilicon supplied to the crucible, the controller can control the power supply unit to cut off the power supply to the solid polysilicon feeder and heater.

[0102] If the molten polysilicon is still melting after the alarm is triggered, the controller can control the power supply unit to cut off the power supply, thus preparing for various situations where the operator does not respond to the leak and takes action.

[0103] Unless otherwise stated herein or otherwise obviously contradicted by the context, the steps of the method according to this disclosure may be performed in any suitable order. This disclosure is not necessarily limited to the stated order of steps. Unless otherwise defined by the claims, the use of any and all examples or exemplary language (e.g., “for example”) provided herein is intended only to describe this disclosure in detail and does not constitute a limitation on the scope of this disclosure. Furthermore, those skilled in the art will readily understand that many modifications, combinations, and alterations can be made under the design conditions and factors defined by the appended claims and within the scope of their equivalents.

[0104] Therefore, the spirit of this disclosure should not be limited to the above-described embodiments, and the following claims and their equivalents or all modifications thereof shall fall within the scope of this disclosure.

Claims

1. A leak detection device, comprising: A crucible configured to melt polycrystalline silicon; A heater configured to heat the crucible; A tray, which is arranged below the crucible and configured to contain molten polysilicon leaking from the crucible; as well as A weighing sensor configured to detect the weight of the pallet.

2. The leak detection device according to claim 1, further comprising: A controller configured to control the operation of the leak detection device based on the weight detected by the weighing sensor.

3. The leakage detection device according to claim 2, wherein... The device includes: An alarm generator is connected to the controller and configured to generate an alarm.

4. The leak detection device according to claim 2, wherein... The device includes: A solid polysilicon feeder configured to supply polysilicon to the crucible; as well as A power supply unit is connected to the solid polysilicon feeder, the heater, and the controller and is configured to supply power to the solid polysilicon feeder and the heater.

5. The leakage detection device according to claim 3, wherein... The controller If the weight detected by the weighing sensor is greater than or equal to a first threshold, the alarm generator is controlled to generate a first alarm. If the weight detected by the weighing sensor is greater than or equal to a second threshold, the alarm generator is controlled to generate a second alarm. The first alarm and the second alarm have different sound effects.

6. The leakage detection device according to claim 4, wherein... The controller If the weight detected by the weighing sensor is greater than or equal to a third threshold, the power supply unit is controlled to block the power supply to the solid polysilicon feeder and the heater.

7. The leak detection device according to claim 5, wherein... The first threshold is 3% of the weight of the polycrystalline silicon supplied to the crucible, and The second threshold is 5% of the weight of the polycrystalline silicon supplied to the crucible.

8. The leak detection device according to claim 6, wherein The third threshold is 10% of the weight of the polycrystalline silicon supplied to the crucible.

9. The leak detection device according to claim 1, further comprising: A chamber arranged below the crucible and a thermal zone structure configured to protect the chamber and containing insulating material. The tray thereunder covers the hot zone structure between the crucible and the hot zone structure.

10. The leak detection device according to claim 1, wherein... The crucible includes An outlet extending outward from one side of the crucible. The end of the outlet faces downwards, and The outlet is positioned at a height higher than the center of the crucible.

11. The leak detection device according to claim 10, wherein... The orthographic projection of the tray includes the orthographic projections of the crucible and the outlet.

Images