Method for preparing self-repairing monocrystalline silicon nanowire and testing mechanical / electrical property recovery rate of self-repairing monocrystalline silicon nanowire
By fabricating single-crystal silicon nanowires using a focused ion beam system and atomic precision electron beam etching technology, and combining them with a mechanical/electrical performance testing chip, the challenges of low efficiency and performance recovery rate testing of self-healing materials were solved, achieving efficient self-healing and quantitative testing.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA UNIV OF MINING & TECH
- Filing Date
- 2026-02-06
- Publication Date
- 2026-05-01
AI Technical Summary
Existing self-healing materials require repair agents or external environmental stimuli, and their fracture strength is on the order of MPa. The spontaneous repair efficiency of micro- and nano-scale hard and brittle materials is low, making it difficult to achieve >50%, and there is a lack of effective quantitative testing of the recovery rate of mechanical and electrical properties.
Single-crystal silicon nanowires were fabricated using a focused ion beam system and surface etching was performed using atomic precision electron beam etching technology. The nanowires were then connected and tested using a mechanical/electrical performance testing chip, achieving the fabrication of single-crystal silicon nanowires with a self-healing efficiency of >70% and testing of their mechanical/electrical performance recovery rate.
This study achieved the fabrication of highly efficient self-healing single-crystal silicon nanowires, improved the accuracy and reliability of mechanical/electrical property recovery rate testing, and solved the problem of quantitative testing of performance recovery rate after nanowire breakage.
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Abstract
Description
A method for preparing self-healing single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate. Technical Field
[0001] This invention belongs to the field of semiconductor atomic manufacturing and performance testing technology, specifically relating to the preparation of self-healing single-crystal silicon nanowires and a method for testing their mechanical / electrical property recovery rate. Background Technology
[0002] With the continuous development of electronic information technology, silicon, as one of the most important semiconductor materials, is used in over 95% of integrated circuits worldwide. Furthermore, due to the mature processing technology of single-crystal silicon, high-performance devices in high-end equipment still rely heavily on silicon. Single-crystal silicon nanowires, due to their excellent mechanical / electrical properties, have significant application prospects in nanoelectromechanical devices, mechanical sensors, and flexible electronic products. However, the inherently brittle fracture of single-crystal silicon nanowires under stress can easily lead to the complete failure of related devices, while fields such as deep space exploration and national defense urgently require highly safe and long-life materials and devices.
[0003] Achieving self-healing of material fracture surfaces can effectively extend the service life of related materials or devices, improve their service safety, and even prevent catastrophic accidents. Self-healing materials, as a type of smart material, were first proposed in the United States in the 1970s to reduce the probability of damage and maintenance costs of aerospace equipment, but technological breakthroughs were not achieved until the early 21st century. With the development of science and technology and the increasing demand for long-life, high-safety devices, self-healing materials have received increasing attention and have significant application prospects in energy, electronics, and aerospace industries. However, currently developed self-healing materials usually require repair agents or external environmental stimuli, and are typically polymers or polymer-containing composites (limited application scenarios, and fracture strength is usually in the MPa range). While recent reports indicate that micro / nano-scale hard and brittle materials can spontaneously repair their fracture surfaces, a repair efficiency of >50% is still difficult to achieve in the laboratory. Furthermore, due to the extremely small size of the prepared nanomaterials, they are difficult to connect to test chips and are prone to breakage or contamination. Effective quantitative testing of the recovery rate of mechanical and electrical properties after repair is also lacking. Summary of the Invention
[0004] The purpose of this invention is to provide a method for preparing self-healing single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate. The method involves processing a single-crystal silicon sample using a focused ion beam system to prepare single-crystal silicon nanowires, and then etching the surface of the nanowires using atomic precision electron beam etching technology to achieve controllable preparation of single-crystal silicon nanowires with a self-healing efficiency >70%. During the preparation process, the two ends of a micron-sized sheet are welded to a mechanical / electrical property testing chip and connected to the chip's circuitry. Transmission electron microscopy (TEM) is used to characterize the mechanical / electrical properties of the single-crystal silicon nanowires before and after fracture, enabling quantitative testing of their self-healing efficiency.
[0005] The present invention solves the above-mentioned technical problems through the following technical solutions.
[0006] The first objective of this invention is to provide a method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate, comprising the following steps: S1, providing a single-crystal silicon material, and using an ion beam to process and bombard the single-crystal silicon material along the
[111] crystal direction to form a micron-sized sheet.
[0007] S2. The micron sheet is welded onto the robotic arm of the focused ion beam system. The bottom of the micron sheet is bombarded with the ion beam for the first time to cut off the bottom of the micron sheet. Then, the two ends of the micron sheet are welded to the force / electrical performance test chip and connected to the force / electrical performance test chip circuit. Then, a second ion beam bombardment is performed to cut off the connection between the robotic arm and the micron sheet.
[0008] S3. Thin the micron sheet to a thickness of 80nm to 120nm, and adjust the width of the micron sheet to form nanowires.
[0009] S4. The surface of the nanowire is etched using an electron beam spot to make the width of the nanowire 30nm to 80nm, thus obtaining a self-healing single-crystal silicon nanowire.
[0010] S5. The self-healing single-crystal silicon nanowires after etching are subjected to electrical performance testing and mechanical tensile testing using a force / electrical performance testing chip to obtain the conductivity recovery rate and fracture strength recovery rate.
[0011] Furthermore, the length of the micron-sized sheet is 6μm to 10μm, the width is 1μm to 1.5μm, and the bombardment depth is 4μm to 8μm; the length of the single-crystal silicon material is 5mm to 30mm, the width is 10mm to 50mm, and the thickness is 200μm to 800μm.
[0012] Furthermore, when processing and bombarding single-crystal silicon materials along the
[111] crystal direction, the angle between the ion beam and the electron beam is 52°, the voltage of the ion beam current is 30kV, and the current is 0.72nA~1.2nA.
[0013] Furthermore, before welding, the single-crystal silicon material is rotated to its original position. During welding, the voltage of the ion beam current is 30kV and the current is 40pA to 120pA. During the first ion beam bombardment, the voltage of the ion beam current is 30kV and the current is 0.72nA to 1.2nA.
[0014] Furthermore, before connecting the two ends of the micron-sized sheet to the force / electrical performance testing chip, the force / electrical performance testing chip is fixed on the 45° sample stage of the focused ion beam system. The force / electrical performance testing chip is a spring-loaded pressure-rotation-pull device with a spring stiffness of 0.3μN / nm to 0.9μN / nm, and tilted to 26° to 34°. When connecting the two ends of the micron-sized sheet to the force / electrical performance testing chip, ion beam-assisted deposition is used, with an ion beam voltage of 30kV and a current of 40pA to 120pA. For the second ion beam bombardment, the ion beam voltage is 30kV and the current is 240pA to 720pA.
[0015] Furthermore, during the thinning process of the micron-sized sheet, it is rotated horizontally by 180° and tilted to 18°–26°. The voltage of the ion beam current is 16kV and the current is 50pA–80pA.
[0016] Furthermore, during the process of adjusting the width of the micrometer sheet, the horizontal rotation is returned to 0° and tilted to -2° to -12°. The voltage of the ion beam current is 16kV, the current is 50pA to 80pA, the nanowire length is 300nm to 500nm, and the width is 100 to 140nm.
[0017] Furthermore, etching involves transferring the mechanical / electrical performance testing chip into a transmission electron microscope (TEM). The TEM electron beam is focused into a circular spot, and this spot is used to etch the surface of the nanowires. The electron beam spot diameter is 1 nm to 6 nm, the electron beam acceleration voltage is 200 kV to 300 kV, and the electron beam dose rate is 1 × 10⁻⁶. 6 e / Å 2 s~1×10 8 e / Å 2 s.
[0018] Furthermore, during the electrical performance testing and mechanical tensile testing of the force / electrical performance testing chip circuit, transmission electron microscopy (TEM) was used to perform these tests, measuring the conductivity and fracture strength as C0 and σ0, respectively. After the nanowire fractured and was allowed to stand for 1 to 60 minutes, it underwent further electrical and mechanical tensile testing, measuring the conductivity and fracture strength as C1 and σ1, respectively. The conductivity recovery rate η was then calculated. C =C1 / C0, fracture strength recovery rate η σ =σ1 / σ0.
[0019] Furthermore, the electrical performance test voltage is 0.2V to 2V, the mechanical performance tensile test loading speed is 3nm / s to 20nm / s, and the maximum loading stroke is 100nm to 300nm.
[0020] Compared with existing technologies, this invention has the following advantages: This invention provides a method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and its mechanical / electrical property recovery rate testing technology. A focused ion beam system is used to process the single-crystal silicon sample along the
[111] direction. Single-crystal silicon is prone to cleavage fracture along the
[111] crystal direction. Atomic precision electron beam etching technology is used to etch the surface of the single-crystal silicon nanowires, removing the surface damage / contamination layer, reducing defects, and resulting in a smoother cross-section. By selecting single-crystal silicon nanowires with a
[111] orientation, the cross-section is smoother. The smaller the nanowire size and the smoother the cross-section, the higher the self-healing efficiency, thereby achieving… A controllable fabrication of single-crystal silicon nanowires with a self-healing efficiency >70% was achieved. During the fabrication process, the two ends of a micron-sized wafer were welded to a mechanical / electrical performance testing chip and connected to the chip's circuitry. After subsequent thinning, trimming, and etching, the mechanical / electrical performance testing chip was integrated into both ends of the nanowire. Thus, the mechanical / electrical properties of the single-crystal silicon nanowire before and after fracture were characterized using transmission electron microscopy (TEM) mechanical / electrical testing technology. This enabled quantitative testing of its self-healing efficiency, avoiding the difficulties in connecting the mechanical / electrical performance testing chip due to the extremely small size of the nanowire and its susceptibility to breakage and contamination, thereby improving the accuracy of mechanical / electrical performance recovery rate testing. Attached Figure Description
[0021] Figure 1 is a transmission electron microscope image of silicon nanowires prepared using a focused ion beam system in Example 1 of the present invention.
[0022] Figure 2 is a transmission electron microscope image of single-crystal silicon nanowires prepared by a focused ion beam system combined with atomic precision electron beam etching technology in Example 1 of the present invention.
[0023] Figure 3 shows the stress-strain curves of the single-crystal silicon nanowires prepared by the focused ion beam system combined with atomic precision electron beam etching technology before and after self-healing in Example 1 of the present invention. Detailed Implementation
[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0025] It should be noted that the technical terminology used in this invention is for the purpose of describing specific embodiments only and is not intended to limit the scope of protection of this invention. Certain terms are used in this invention to refer to specific components. Those skilled in the art will understand that different terms may be used to refer to the same component. This invention does not distinguish components based on differences in terminology, but rather on differences in their functions.
[0026] Currently developed self-healing materials typically require repair agents or external environmental stimuli, and are usually polymers or polymer-containing composites (limited application scenarios, and fracture strength is usually in the MPa range). Recently, it has been reported that the fracture surface of micro- and nano-scale hard and brittle materials can spontaneously repair itself (Adv. Funct. Mater. 2025, 35, 2422697), but a repair efficiency of >50% is still difficult to achieve in the laboratory. Furthermore, due to the extremely small size of the prepared nanomaterials, there is a lack of effective quantitative testing on the recovery rate of mechanical and electrical properties after repair.
[0027] Based on the above problems, the present invention provides a method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing the mechanical / electrical property recovery rate, including the following steps: S1, providing a single-crystal silicon material, and using an ion beam to process and bombard the single-crystal silicon material along the
[111] crystal direction to form a micron-sized sheet.
[0028] Among them, the length of the single-crystal silicon material is 5mm to 30mm, the width is 10mm to 50mm, and the thickness is 200μm to 800μm. The single-crystal silicon
[111] crystal plane has a relatively flat cross-section and a high self-healing efficiency. <110> Single-crystal silicon material is convenient for preparing
[111] oriented single-crystal silicon nanowires; if the sample size is too small, it will be difficult to operate, and if the sample size is too large, it will easily touch the lens barrel of the focused ion beam system and damage the equipment, so the sample size should be moderate.
[0029] In this invention, a single-crystal silicon material is fixed on a horizontal sample stage of a focused ion beam system. The horizontal sample stage is then tilted to 52°. Since the angle between the ion beam and the electron beam is 52°, tilting the horizontal sample stage to 52° makes the ion beam perpendicular to the single-crystal silicon sample, allowing it to be bombarded with the ion beam. The single-crystal silicon material is bombarded on the sample surface along the
[111] crystal orientation to form micron-sized sheets. The voltage of the ion beam current is 30kV, the current is 0.72nA to 1.2nA, the length of the micron-sized sheets is 6μm to 10μm, the width is 1μm to 1.5μm, and the bombardment depth is 4μm to 8μm. A low ion beam current will result in a slow processing speed, while a high ion beam current will result in a thicker damage layer on the processed micron-sized sheets.
[0030] S2. The micron sheet is welded onto the robotic arm of the focused ion beam system. The bottom of the micron sheet is bombarded with the ion beam for the first time to cut off the bottom of the micron sheet. Then, the two ends of the micron sheet are welded to the force / electrical performance test and connected to the force / electrical performance test chip circuit. Then, a second ion beam bombardment is performed to cut off the connection between the robotic arm and the micron sheet.
[0031] In this invention, before welding, the single-crystal silicon material is rotated to its original position at 0° to ensure that the micron-sized wafer is vertically downward when it is removed. Insufficient or excessive ion beam current during the deposition process will lead to incomplete deposition, i.e., weak welding. The micron-sized wafer is welded to the robotic arm of the focused ion beam system using ion beam-assisted deposition. During deposition, the voltage of the ion beam current is 30kV, and the current is 40pA to 120pA. During the first ion beam bombardment, the voltage of the ion beam current is 30kV, and the current is 0.72nA to 1.2nA.
[0032] In this invention, a force / electrical performance testing chip is fixed to a 45° sample stage of a focused ion beam system using conductive adhesive. The chip is a spring-loaded, spring-driven mechanism with a stiffness of 0.3 μN / nm to 0.9 μN / nm. This spring-loaded chip allows for testing the force / electrical properties of the prepared single-crystal silicon nanowires. Furthermore, after tensile fracture, the fracture surface returns to its initial position under the spring's action, achieving self-healing. The 45° sample stage is tilted to 26°–34°, creating an angle of 11°–19° between the chip and the micrometer sheet. This allows for subsequent thinning and processing of the micrometer sheet to form nanowires. The ends of the micrometer sheet are welded to the force / electrical performance testing chip and connected to the chip's circuitry via ion beam-assisted deposition. A second ion beam bombardment severs the connection between the robotic arm and the micrometer sheet. The ion beam voltage is 30 kV, and the current is 240 pA–720 pA.
[0033] S3. Thin the micron sheet to a thickness of 80nm to 120nm, and adjust the width of the micron sheet to form nanowires.
[0034] In this invention, the trimming process involves first rotating the 45° sample stage horizontally by 180° and then tilting it to 18°–26° to make the ion beam parallel to the micron sheet, thereby thinning it. The micron sheet is then thinned to a thickness of 80 nm–120 nm by ion beam cutting. The voltage of the ion beam current is 16 kV and the current is 50 pA–80 pA. If the micron sheet is too thin, it is prone to bending; if it is too thick, the nanowire size is too large, resulting in low repair efficiency. If the ion beam current is too small during the thinning process, the processing speed will be slow; if the ion beam current is too large, the damaged layer of the processed micron sheet will be too thick.
[0035] In this invention, the trimming process involves first rotating the 45° sample stage horizontally back to 0° and then tilting it to -2° to -12°, so that the ion beam is perpendicular to the micron sheet. The width of the micron sheet is trimmed by ion beam cutting to form nanowires. If the nanowires are too long, they are prone to breakage and flying away, making self-repair difficult. The width of the micron sheet is trimmed by ion beam cutting to form nanowires. The voltage of the ion beam current is 16kV, the current is 50pA to 80pA, the nanowire length is 300nm to 500nm, and the width is 100nm to 140nm.
[0036] S4. The surface of the nanowire is etched using an electron beam spot to make the width of the nanowire 30nm to 80nm, thus obtaining a self-healing single-crystal silicon nanowire.
[0037] In this invention, the mechanical / electrical performance testing chip is transferred to a transmission electron microscope (TEM). The electron beam of the TEM is focused into a circular electron beam spot, which is then used to etch the surface of the nanowires. The diameter of the electron beam spot is 1 nm to 6 nm, the electron beam accelerating voltage is 200 kV to 300 kV, and the electron beam dose rate is 1 × 10⁻⁶. 6 e / Å 2 s~1×10 8 e / Å 2 Transmission electron microscopy (TEM) offers atomic-precision resolution, allowing for atomic-precision etching of the surface of single-crystal silicon nanowires using an electron beam.
[0038] S5. For the etched self-healing single-crystal silicon nanowires, electrical performance tests and mechanical tensile tests are performed using a force / electrical performance testing chip to measure the conductivity and fracture strength before and after the nanowires break, and obtain the conductivity recovery rate and fracture strength recovery rate.
[0039] In this invention, during the electrical performance testing and mechanical tensile testing using a force / electrical performance testing chip, transmission electron microscopy (TEM) force / electrical testing technology is employed to measure the electrical conductivity and tensile strength, respectively, C0 and σ0. After the nanowire breaks and is left to stand for 1 to 60 minutes, it undergoes electrical performance testing and tensile testing again, yielding the electrical conductivity and tensile strength, respectively, C1 and σ1. The conductivity recovery rate η is then calculated. C =C1 / C0, fracture strength recovery rate η σ =σ1 / σ0. Among them, the electrical performance test voltage is 0.2V~2V, the mechanical performance tensile test loading speed is 3nm / s~20nm / s, and the maximum loading stroke is 100nm~300nm.
[0040] In summary, this invention utilizes a focused ion beam system to process single-crystal silicon samples along the
[111] direction. Single-crystal silicon readily undergoes cleavage fracture along the
[111] crystal orientation, thus preparing single-crystal silicon nanowires. Atomic-precision electron beam etching is then used to etch the surface of the single-crystal silicon nanowires, removing the surface damage / contamination layer, reducing defects, and resulting in a smoother cross-section and improved self-healing efficiency. This invention selects single-crystal silicon nanowires with a
[111] orientation, resulting in a smoother cross-section. The smaller the nanowire size and the smoother the cross-section, the higher the self-healing efficiency, thereby achieving controllable preparation of single-crystal silicon nanowires with a self-healing efficiency >70%. Furthermore, during the preparation of single-crystal silicon nanowires, the two ends of a micron-sized sheet are welded to a force / electrical performance testing chip and connected to the chip's circuitry. The micron-sized sheet is then processed to prepare nanowires, and the nanowire surface is further etched with an electron beam using a transmission electron microscope with atomic precision, improving processing accuracy and the self-healing efficiency of the nanowire cross-section.
[0041] The following specific examples will provide further explanation.
[0042] Example 1 A method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires includes the following steps: S1, providing a single-crystal silicon material with a
[111] crystal orientation, the single-crystal silicon material being 25mm long, 15mm wide, and 400μm thick, and fixing the sample and the force / electrical performance test chip to the horizontal sample stage and the 45° sample stage of the focused ion beam system respectively with conductive adhesive, wherein the force / electrical performance test chip is a pressure-rotation-pull device with a spring, and the spring stiffness is 0.4μN / nm.
[0043] S2. Tilting the horizontal sample stage to 52°, and using an ion beam to bombard the sample surface along the
[111] crystal orientation to form a micron sheet. The micron sheet is 7 μm long, 1.1 μm wide, and 5 μm deep. The voltage of the ion beam current is 30 kV and the current is 0.79 nA, thus obtaining a micron sheet.
[0044] S3. Rotate the horizontal sample stage back to 0° and use ion beam-assisted deposition to weld the micron sheet onto the robotic arm of the focused ion beam system. During the deposition process, the ion beam voltage is 30kV and the current is 40pA. Then, use ion beam bombardment to cut off the bottom of the micron sheet. During the bombardment process, the ion beam voltage is 30kV and the current is 0.79nA. Use the robotic arm to remove the micron sheet.
[0045] S4. Tilting the 45° sample stage to 30°, the two ends of the micron sheet are welded to the force / electrical performance testing chip and connected to the chip circuit by ion beam assisted deposition. The voltage of the ion beam current during the deposition process is 30kV and the current is 40pA. The connection between the robot and the micron sheet is cut off by ion beam bombardment. The voltage of the ion beam current during the bombardment process is 30kV and the current is 340pA.
[0046] S5. Rotate the 45° sample stage horizontally by 180° and tilt it to 22°. Thin the micron sheet to a thickness of 100nm by ion beam cutting. The voltage of the ion beam current is 30kV and the current is 40pA.
[0047] S6. Rotate the 45° sample stage back to 0° and tilt it to -8°. Trim the width of the micron sheet by ion beam cutting to form nanowires. The voltage of the ion beam current is 30kV and the current is 40pA. The nanowires are 350nm long and 120nm wide, as shown in Figure 1.
[0048] S7. The mechanical / electrical performance testing chip is transferred to a transmission electron microscope (TEM). The electron beam of the TEM is focused into a circular electron beam spot. The edge of the nanowire is etched using the electron beam spot, resulting in a nanowire width of 80 nm, an electron beam spot diameter of 5 nm, an electron beam accelerating voltage of 200 kV, and an electron beam dose rate of 5 × 10⁶ e / Å. 2 Figure 2 shows the self-healing single-crystal silicon nanowires after etching.
[0049] The etched self-healing single-crystal silicon nanowires were subjected to electrical and mechanical tensile tests using transmission electron microscopy (TEM). The fracture strength was measured to be 6.93 GPa. After the nanowires fractured and were left to stand for 5 minutes, they were subjected to another mechanical tensile test, which showed a fracture strength of 5.37 GPa. The loading speed for the mechanical tensile test was 3 nm / s, and the maximum loading stroke was 150 nm. The fracture strength recovery rate was calculated to be 77.5%, as shown in Figure 3.
[0050] It should be noted that when numerical ranges are involved in this invention, it should be understood that both endpoints of each numerical range and any value between the two endpoints can be selected. Since the steps and methods used are the same as in the embodiments, preferred embodiments are described here to avoid redundancy. Although preferred embodiments of the invention have been described, those skilled in the art, once they understand the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this invention.
[0051] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.
Claims
1. A method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate, characterized in that, Includes the following steps: A single-crystal silicon material is provided. An ion beam is used to process and bombard the single-crystal silicon material along the [111] crystal direction to form a micron-sized sheet. The micron-sized sheet is welded to the robotic arm of a focused ion beam system. The bottom of the micron-sized sheet is bombarded with an ion beam for the first time to cut off the bottom of the micron-sized sheet. Then, the two ends of the micron-sized sheet are welded to the force / electrical performance test chip and connected to the force / electrical performance test chip circuit. A second ion beam bombardment is performed to cut off the connection between the robotic arm and the micron-sized sheet. The micron-sized sheet is thinned to a thickness of 80nm to 120nm. The width of the micron-sized sheet is adjusted to form a nanowire. The surface of the nanowire is etched using an electron beam spot to make the width of the nanowire 30nm to 80nm, thus obtaining a self-healing single-crystal silicon nanowire. The self-healing single-crystal silicon nanowires after etching were subjected to electrical performance testing and mechanical tensile testing using a mechanical / electrical performance testing chip circuit to obtain the conductivity recovery rate and fracture strength recovery rate.
2. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, The length of the micron-sized sheet is 6μm to 10μm, the width is 1μm to 1.5μm, and the bombardment depth is 4μm to 8μm; the length of the single-crystal silicon material is 5mm to 30mm, the width is 10mm to 50mm, and the thickness is 200μm to 800μm.
3. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, When processing and bombarding single-crystal silicon materials along the [111] crystal direction, the voltage of the ion beam current is 30kV and the current is 0.72nA to 1.2nA.
4. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, Before welding, the single-crystal silicon material is rotated to its original position. During welding, the voltage of the ion beam current is 30kV and the current is 40pA to 120pA. During the first ion beam bombardment, the voltage of the ion beam current is 30kV and the current is 0.72nA to 1.2nA.
5. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, Before connecting the two ends of the micrometer sheet to the force / electrical performance testing chip, the force / electrical performance testing chip is fixed on the 45° sample stage of the focused ion beam system. The force / electrical performance testing chip is a spring-loaded pressure-rotation-pull device with a spring stiffness of 0.3μN / nm to 0.9μN / nm, and tilted to 26° to 34°. When connecting the two ends of the micrometer sheet to the force / electrical performance testing chip, ion beam-assisted deposition is used. The voltage of the ion beam current is 30kV and the current is 40pA to 120pA. The voltage of the second ion beam bombardment is 30kV and the current is 240pA to 720pA.
6. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, During the thinning process of the micron-sized sheet, it is rotated horizontally by 180° and tilted to 18° to 26°. The voltage of the ion beam current is 16kV and the current is 50pA to 80pA.
7. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, During the process of adjusting the width of the micrometer sheet, the horizontal rotation is returned to 0° and tilted to -2° to -12°. The voltage of the ion beam current is 16kV, the current is 50pA to 80pA, the nanowire length is 300nm to 500nm, and the width is 100 to 140nm.
8. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, Etching involves transferring the mechanical / electrical performance testing chip into a transmission electron microscope (TEM). The TEM electron beam is focused into a circular spot, which is then used to etch the surface of the nanowires. The electron beam spot diameter is 1 nm to 6 nm, the electron beam acceleration voltage is 200 kV to 300 kV, and the electron beam dose rate is 1 × 10⁻⁶. 6 e / Å 2 s~1×10 8 e / Å 2 s.
9. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 1, characterized in that, During the electrical and mechanical tensile testing of the force / electrical performance testing chip circuit, transmission electron microscopy (TEM) was used to perform the electrical and mechanical tensile tests, measuring the conductivity and fracture strength as C0 and σ0, respectively. After the nanowire fractured and was allowed to stand for 1 to 60 minutes, it underwent the electrical and mechanical tensile tests again, measuring the conductivity and fracture strength as C1 and σ1, respectively. The conductivity recovery rate η was calculated. C =C1 / C0, fracture strength recovery rate η σ =σ1 / σ0.
10. The method for preparing ultra-high self-healing efficiency single-crystal silicon nanowires and testing their mechanical / electrical property recovery rate according to claim 9, characterized in that, The electrical performance test voltage is 0.2V to 2V, the mechanical performance tensile test loading speed is 3nm / s to 20nm / s, and the maximum loading stroke is 100nm to 300nm.