Preparation method of display panel

Abstract

The invention discloses a preparation method of a display panel. The method comprises the following steps: providing an array substrate; a first electrode located on the first side of the array substrate is formed in the light-emitting area; a first light-emitting material layer located in the first light-emitting area is formed on the side, away from the array substrate, of the first electrode; wherein the material of the first light-emitting material layer comprises a first quantum dot light-emitting material; a first sacrificial layer located outside the second light-emitting area is formed on the side, away from the array substrate, of the first light-emitting material layer; forming a whole-surface second luminescent material layer on the first side of the array substrate; wherein the second light-emitting material layer comprises an organic light-emitting material; removing the first sacrificial layer so as to remove the second light-emitting material layer in the area outside the second light-emitting area; second electrodes are formed on the sides, away from the array substrate, of the first light-emitting material layer and the second light-emitting material layer. The invention creatively provides the preparation method of the display panel of the hybrid light-emitting device.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a method for manufacturing a display panel. Background Technology

[0002] With the development of display technology, the market has increasingly higher requirements for the display effect of display panels.

[0003] However, all existing types of light-emitting devices suffer from significant performance differences between different emission colors of the same type of light-emitting device. Summary of the Invention

[0004] This application provides a method for preparing a display panel, which can be used to prepare a display panel with a hybrid light-emitting device.

[0005] This application provides a method for fabricating a display panel, the method comprising: providing an array substrate; wherein the array substrate has a first side and a second side disposed opposite to each other, and the array substrate includes a plurality of spaced-apart light-emitting regions, the plurality of light-emitting regions including a first light-emitting region and a second light-emitting region; forming a first electrode located on the first side of the array substrate in the light-emitting region; forming a first light-emitting material layer located in the first light-emitting region on the side of the first electrode away from the array substrate; wherein the material of the first light-emitting material layer includes a first quantum dot light-emitting material; forming a first sacrificial layer located outside the second light-emitting region on the side of the first light-emitting material layer away from the array substrate; forming a full-surface second light-emitting material layer on the first side of the array substrate; wherein the second light-emitting material layer includes an organic light-emitting material; removing the first sacrificial layer to remove the second light-emitting material layer in the region outside the second light-emitting region; and forming a second electrode on the side of both the first light-emitting material layer and the second light-emitting material layer away from the array substrate.

[0006] In one embodiment, the step of forming a first sacrificial layer located outside the second light-emitting region on the side of the first light-emitting material layer away from the array substrate includes: forming a full-surface first sacrificial layer on the side of the first light-emitting material layer away from the array substrate; wherein the first sacrificial layer is an organic layer; forming a full-surface second sacrificial layer on the side of the first sacrificial layer away from the array substrate; wherein the second sacrificial layer is an inorganic layer; forming a full-surface first photoresist on the side of the second sacrificial layer away from the array substrate; patterning the first photoresist to remove the first photoresist in the second light-emitting region; patterning the second sacrificial layer using the remaining first photoresist as a mask to remove the second sacrificial layer in the second light-emitting region; removing the remaining first photoresist; and patterning the first sacrificial layer using the remaining second sacrificial layer as a mask to remove the first sacrificial layer in the second light-emitting region and expose the first electrode in the second light-emitting region.

[0007] In one embodiment, the material of the first sacrificial layer includes hydrolyzed organic material or alcoholyzed organic material, and / or the material of the second sacrificial layer includes silicon oxide, silicon nitride, or silicon oxynitride.

[0008] In one embodiment, the thickness of the first sacrificial layer is between 50 nanometers and 2 micrometers; the thickness of the second sacrificial layer is between 20 nanometers and 500 nanometers.

[0009] In one embodiment, the material of the first sacrificial layer includes hydrolyzed organic matter or alcoholyzed organic matter, wherein the hydrolyzed organic matter includes polyvinyl alcohol, and the alcoholyzed organic matter includes at least one of polyethylene terephthalate, polylactic acid, and polyurethane.

[0010] In one embodiment, the step of forming a full-surface second light-emitting material layer on the first side of the array substrate includes: forming a full-surface second light-emitting material layer on the first side of the array substrate using a vapor deposition process.

[0011] In one embodiment, the step of forming a first light-emitting material layer located in the first light-emitting region on the side of the first electrode away from the array substrate includes: forming a full-surface first light-emitting material layer on the side of the first electrode away from the array substrate; wherein the material of the first light-emitting material layer includes a photosensitive material; and patterning the first light-emitting material layer using a photolithography process to remove the first light-emitting material layer in regions other than the first light-emitting region.

[0012] In one embodiment, before the step of forming a first light-emitting material layer located in the first light-emitting region on the side of the first electrode away from the array substrate, the method further includes: forming a full-surface first charge carrier layer on the side of the first electrode away from the array substrate; before the step of forming a full-surface second light-emitting material layer on the first side of the array substrate, wherein the second light-emitting material layer comprises an organic light-emitting material, the method further includes: patterning the first charge carrier layer to expose the first electrode in the second light-emitting region.

[0013] In one embodiment, before removing the first sacrificial layer, the method further includes: forming a full-surface third sacrificial layer on the first side of the array substrate; patterning the third sacrificial layer to remove the third sacrificial layer in two adjacent light-emitting regions; and using the remaining third sacrificial layer as a mask to remove all film layers between two adjacent light-emitting regions on the array substrate.

[0014] In one embodiment, the third sacrificial layer is an inorganic layer, and the step of patterning the third sacrificial layer to remove the third sacrificial layer in two adjacent light-emitting regions includes: forming a second photoresist on the side of the third sacrificial layer away from the array substrate; patterning the second photoresist to remove the second photoresist between two adjacent light-emitting regions; and patterning the third sacrificial layer using the remaining second photoresist as a mask.

[0015] In one embodiment, prior to the step of forming a full-surface third sacrificial layer on the first side of the array substrate, the method further includes: forming a full-surface fourth sacrificial layer on the first side of the array substrate; wherein the fourth sacrificial layer is made of the same material as the first sacrificial layer.

[0016] In one embodiment, the step of forming a full-surface second light-emitting material layer on the first side of the array substrate, wherein the second light-emitting material layer comprises an organic light-emitting material, includes: forming a full-surface second carrier layer on the side of the first electrode facing away from the array substrate; forming a full-surface second light-emitting material layer on the side of the second carrier layer facing away from the array substrate; forming a full-surface third carrier layer on the side of the second light-emitting material layer facing away from the array substrate; the step of removing the first sacrificial layer to remove the second light-emitting material layer in the region other than the second light-emitting region includes: removing the first sacrificial layer to remove the second carrier layer, the second light-emitting material layer and the third carrier layer in the region other than the second light-emitting region.

[0017] In one embodiment, before the step of forming a second electrode on the side of both the first light-emitting material layer and the second light-emitting material layer away from the array substrate, the method further includes: forming a full-surface fourth carrier layer on the side of the third carrier layer away from the array substrate.

[0018] In one embodiment, the plurality of light-emitting regions further include a third light-emitting region; before forming a first sacrificial layer located outside the second light-emitting region on the side of the first light-emitting material layer away from the array substrate, the method further includes: forming a third light-emitting material layer located in the third light-emitting region on the side of the first electrode away from the array substrate, wherein the material of the third light-emitting material layer includes a second quantum dot light-emitting material.

[0019] In one embodiment, the first luminescent material layer emits red light, the second luminescent material layer emits blue light, and the third luminescent material layer emits green light.

[0020] The advantages of this application, unlike existing technologies, are as follows: The display panel fabrication method of this application is a method for fabricating a display panel with hybrid light-emitting devices. This display panel includes light-emitting devices of different light-emitting types. The display panel includes a first light-emitting material layer and a second light-emitting material layer. The first light-emitting material layer is fabricated in a first light-emitting region, and the second light-emitting material layer is fabricated in a second light-emitting region. Since the material of the first light-emitting material layer includes a first quantum dot light-emitting material, and the material of the second light-emitting material layer includes an organic light-emitting material, the two light-emitting materials are different and cannot be fabricated using a single process. In existing technologies, since the types of light-emitting materials for different light-emitting colors are the same—for example, all display panels are made of quantum dot light-emitting materials or all are made of organic light-emitting materials—the fabrication process is relatively simple and can be completed through multiple almost identical fabrication processes. However, since the display panel in this application is a hybrid light-emitting device display panel, the fabrication process in existing technologies cannot be used. This application, through an ingenious design, forms a first sacrificial layer outside the second luminescent region, after the first luminescent material layer in the first luminescent region is prepared, on the side where the second luminescent material layer will be prepared. Then, the second luminescent material layer is formed across the entire surface. Finally, by removing the first sacrificial layer, the second luminescent material layer outside the second luminescent region is also removed, thus retaining only the second luminescent material layer within the second luminescent region. This achieves the preparation of the first luminescent material layer only in the first luminescent region and the second luminescent material layer only in the second luminescent region. It can be seen that the first sacrificial layer plays a crucial role in the preparation process. On the one hand, it temporarily and effectively isolates the first luminescent material layer and the second luminescent material layer within the first luminescent region, preventing the two different luminescent materials from mixing and protecting the first luminescent material. On the other hand, after the first sacrificial layer is removed, the second luminescent material outside the second luminescent region is also removed, ensuring that the first luminescent region contains only the first luminescent material layer and the second luminescent region contains only the second luminescent material. This avoids the presence of two different luminescent materials in the same luminescent region, ensuring the independent luminescence characteristics of different luminescent material layers and thus guaranteeing the display effect of the display panel. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0022] Figure 1 This is a schematic flowchart of the method for manufacturing the display panel of this application; Figure 1a yes Figure 1 A schematic diagram of one embodiment corresponding to step S100; Figure 1b yes Figure 1 A schematic diagram of one embodiment corresponding to step S200; Figure 1c yes Figure 1 A schematic diagram of one embodiment corresponding to step S300; Figure 1d yes Figure 1 A schematic diagram of one embodiment corresponding to step S400; Figure 1e yes Figure 1 A schematic diagram of one embodiment corresponding to step S500; Figure 1f yes Figure 1 A schematic diagram of one embodiment corresponding to step S600; Figure 1g yes Figure 1 A schematic diagram of one embodiment corresponding to step S700; Figure 2 yes Figure 1 A flowchart illustrating one embodiment of step S400; Figure 2a yes Figure 2 A schematic diagram of one embodiment corresponding to step S410; Figure 2b yes Figure 2 A schematic diagram of one embodiment corresponding to step S420; Figure 2c yes Figure 2 A schematic diagram of one embodiment corresponding to step S430; Figure 2d yes Figure 2 A schematic diagram of one embodiment corresponding to step S440; Figure 2e yes Figure 2 A schematic diagram of one embodiment corresponding to step S450; Figure 2f yes Figure 2 A schematic diagram of one embodiment corresponding to step S460; Figure 2g yes Figure 2 A schematic diagram of one embodiment corresponding to step S470; Figure 3 yes Figure 1 A flowchart illustrating one embodiment of step S300; Figure 3a yes Figure 3A schematic diagram of one embodiment corresponding to step S310; Figure 3b yes Figure 3 A schematic diagram of one embodiment corresponding to step S320; Figure 4 yes Figure 1 A flowchart illustrating an embodiment prior to step S300; Figure 4a yes Figure 4 A schematic diagram of one embodiment of step S290; Figure 4b yes Figure 4 A schematic diagram of one embodiment of step S300; Figure 5 yes Figure 1 A flowchart illustrating an embodiment prior to step S500; Figure 5a yes Figure 5 A schematic diagram of one embodiment of step S490; Figure 6 yes Figure 1 A flowchart illustrating one embodiment of step S500; Figure 6a yes Figure 6 A schematic diagram of an embodiment corresponding to step S510; Figure 6b yes Figure 6 A schematic diagram of one embodiment corresponding to step S520; Figure 6c yes Figure 6 A schematic diagram of one embodiment corresponding to step S530; Figure 7 yes Figure 1 A flowchart illustrating one embodiment of step S600; Figure 7a yes Figure 7 A schematic diagram of an embodiment corresponding to step S610; Figure 8 yes Figure 1 A flowchart illustrating an embodiment prior to step S700; Figure 8a yes Figure 8 A schematic diagram of one embodiment corresponding to step S690; Figure 9 yes Figure 1 A flowchart illustrating an embodiment prior to step S600; Figure 9a yes Figure 9 A schematic diagram of one embodiment corresponding to step S410; Figure 9b yes Figure 9 A schematic diagram of one embodiment corresponding to step S420; Figure 9c yes Figure 9 A schematic diagram of one embodiment corresponding to step S430; Figure 9d yes Figure 9 A schematic diagram of one embodiment corresponding to step S440; Figure 10 yes Figure 9 A flowchart illustrating an implementation method prior to step S3000; Figure 10a yes Figure 10 A schematic diagram of an embodiment corresponding to step S3100; Figure 10b yes Figure 10 A schematic diagram of one embodiment corresponding to step S3200; Figure 10c yes Figure 10 A schematic diagram of one embodiment corresponding to step S33000. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0024] It should be noted that the terms "first" and "second" in this application are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0025] In this document, the term "implementation" means that a specific feature, structure, or characteristic described in connection with an implementation may be included in at least one implementation of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same implementation, nor is it a separate or alternative embodiment mutually exclusive with other implementations. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0026] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0027] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0028] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. It should be noted that different features in the embodiments of this application can be combined with each other.

[0029] This application provides a method for manufacturing a display panel. Please refer to [link / reference]. Figure 1 , Figure 1a , Figure 1b , Figure 1c , Figure 1d , Figure 1e , Figure 1f and Figure 1g . Figure 1 This is a schematic flowchart of the method for manufacturing the display panel of this application. Figure 1a yes Figure 1 A schematic diagram of one embodiment corresponding to step S100. Figure 1b yes Figure 1 A schematic diagram of one embodiment corresponding to step S200. Figure 1c yes Figure 1 A schematic diagram of one embodiment corresponding to step S300. Figure 1d yes Figure 1 A schematic diagram of one embodiment corresponding to step S400. Figure 1e yes Figure 1 A schematic diagram of one embodiment corresponding to step S500. Figure 1f yes Figure 1 A schematic diagram of one embodiment corresponding to step S600. Figure 1g yes Figure 1 A schematic diagram of an embodiment corresponding to step S700. The method of this application includes: S100: An array substrate 100 is provided; wherein the array substrate 100 has a first side and a second side disposed opposite to each other, and the array substrate 100 includes a plurality of light-emitting regions disposed at intervals, the plurality of light-emitting regions including a first light-emitting region AA1 and a second light-emitting region AA2.

[0030] Specifically, in combination Figure 1a The array substrate 100 is provided with a pixel driving circuit (not shown). For ease of explanation, this application describes the pixel driving circuit as being located on the first side of the array substrate 100, so that subsequent film layers are fabricated on the first side of the array substrate 100 and can be electrically connected to the pixel driving circuit in the array substrate 100. The light-emitting regions of the array substrate 100 are used for subsequent fabrication of light-emitting material layers. Light-emitting material layers of different colors are fabricated in different light-emitting regions. For example, the light-emitting material layers fabricated in the first light-emitting region AA1 and the second light-emitting region AA2 have different light-emitting colors. Furthermore, to avoid mutual interference between light-emitting material layers of different colors, the light-emitting regions are spaced apart to avoid crosstalk between different colors during display.

[0031] S200: A first electrode 200 is formed in the light-emitting region on the first side of the array substrate 100.

[0032] Specifically, in combination Figure 1a and Figure 1b The first electrodes 200 of the first light-emitting region AA1 and the second light-emitting region AA2 can be fabricated together. A first electrode layer is formed over the entire surface, and then the first electrodes 200 located in the first light-emitting region AA1 and the second light-emitting region AA2 are patterned using photolithography to avoid electrical connections between the first electrodes 200 in the first light-emitting region AA1 and the second light-emitting region AA2, thereby achieving independent power supply to the first electrode 200 of each light-emitting region. Alternatively, the first electrodes 200 can extend further beyond the first light-emitting region AA1 and the second light-emitting region AA2 to provide more deposition surface for subsequent light-emitting material layers, ensuring the contact effect of the thicker light-emitting material layers.

[0033] S300: A first light-emitting material layer 310 is formed on the side of the first electrode 200 away from the array substrate 100, located in the first light-emitting region AA1; wherein, the material of the first light-emitting material layer 310 includes a first quantum dot light-emitting material.

[0034] Specifically, in combination Figure 1b and Figure 1cThe first luminescent material layer 310 is electrically connected to the first electrode 200 in the first luminescent region AA1 by being fabricated so that it can only be located on the side of the first electrode 200 facing away from the array substrate 100 in the first luminescent region AA1. The first luminescent material layer 310 cannot be located on the side of the first electrode 200 facing away from the array substrate 100 in the second luminescent region AA2, nor can it be located in the region between the first luminescent region AA1 and the second luminescent region AA2. The material of the first luminescent material layer 310 includes a first quantum dot luminescent material, which is a quantum dot electroluminescent material.

[0035] S400: A first sacrificial layer 410 is formed on the side of the first light-emitting material layer 310 away from the array substrate 100, located outside the second light-emitting region AA2.

[0036] Specifically, in combination Figure 1c and Figure 1d The first sacrificial layer 410 is a temporary film layer in the process, which mainly covers the area other than the second light-emitting area AA2. This area includes the first light-emitting area AA1 and the area between the first light-emitting area AA1 and the second light-emitting area AA2. In other words, the first sacrificial layer 410 will not cover the light-emitting area where no light-emitting material layer has been formed.

[0037] S500: A second light-emitting material layer 320 is formed on the first side of the array substrate 100; wherein the second light-emitting material layer 320 includes an organic light-emitting material.

[0038] Specifically, in combination Figure 1d and Figure 1e The second light-emitting material layer 320 emits a different color than the first light-emitting material layer 310. The second light-emitting material layer 320 includes an organic light-emitting material, which is a type of organic electroluminescent material. The type of light-emitting material in the second light-emitting material layer 320 is also different from that in the first light-emitting material layer 310. In this step, the second light-emitting material layer 320 is formed over its entire surface, covering not only the side of the first electrode 200 in the second light-emitting region AA2 facing away from the array substrate 100, but also the side of the first sacrificial layer 410 located outside the second light-emitting region AA2 facing away from the array substrate 100. Optionally, the entire surface of the second light-emitting material layer 320 can be formed on the first side of the array substrate 100 using a vapor deposition process. Vapor deposition is a mature process for preparing organic light-emitting material layers and is simpler to implement. Alternatively, a printing process can also be used to prepare the organic light-emitting material layer.

[0039] S600: Remove the first sacrificial layer 410 to remove the second luminescent material layer 320 in the region outside the second luminescent region AA2.

[0040] Specifically, in combination Figure 1e and Figure 1f By removing the first sacrificial layer 410 and simultaneously removing the second light-emitting material layer 320 located on the side of the first sacrificial layer 410 away from the array substrate 100, leaving only the second light-emitting material layer 320 located in the second light-emitting region AA2, the preparation of the first light-emitting material layer 310 and the second light-emitting material layer 320 is completed, that is, the preparation of two light-emitting material layers of different light-emitting types is completed.

[0041] S700: A second electrode 500 is formed on the side of the first light-emitting material layer 310 and the second light-emitting material layer 320 that is away from the array substrate 100.

[0042] Specifically, in combination Figure 1f and Figure 1g The second electrode 500 can be formed on the entire surface and cover all the light-emitting areas and the gaps between adjacent light-emitting areas, thereby finally completing the fabrication of the first light-emitting device located in the first light-emitting area AA1 and the second light-emitting device located in the second light-emitting area AA2.

[0043] Unlike existing technologies, the display panel fabrication method of this application is a method for fabricating a display panel with hybrid light-emitting devices. This display panel includes light-emitting devices of different light-emitting types. The display panel includes a first light-emitting material layer 310 and a second light-emitting material layer 320. The first light-emitting material layer 310 is fabricated in a first light-emitting region AA1, and the second light-emitting material layer 320 is fabricated in a second light-emitting region AA2. Since the material of the first light-emitting material layer 310 includes a first quantum dot light-emitting material, and the material of the second light-emitting material layer 320 includes an organic light-emitting material, the two light-emitting materials are different and cannot be fabricated using a single process. In existing technologies, since the light-emitting materials for different light-emitting colors are of the same type—for example, all display panels are made of quantum dot light-emitting materials or all are made of organic light-emitting materials—the fabrication process is relatively simple and can be completed through multiple almost identical fabrication processes. However, since the display panel in this application is a hybrid light-emitting device display panel, the fabrication process of existing technologies cannot be used. This application, through an inventive design, after preparing the first luminescent material layer 310 in the first luminescent region AA1, forms a first sacrificial layer 410 outside the second luminescent region AA2 where the second luminescent material layer 320 is to be prepared. Then, the second luminescent material layer 320 is formed on the entire surface. Then, by removing the first sacrificial layer 410, the second luminescent material layer 320 outside the second luminescent region AA2 is also removed, thus retaining only the second luminescent material layer 320 located in the second luminescent region AA2. Finally, the preparation of the first luminescent material layer 310 only in the first luminescent region AA1 and the preparation of the second luminescent material layer 320 only in the second luminescent region AA2 is completed. It can be seen that during the preparation process, the first sacrificial layer 410 serves two purposes. On the one hand, the first sacrificial layer 410 temporarily and effectively isolates the first luminescent material layer 310 and the second luminescent material layer 320 located in the first luminescent region AA1, preventing the two different types of luminescent materials from mixing together, thus protecting the first luminescent material layer 310. On the other hand, after the first sacrificial layer 410 is removed, the second luminescent material layer 320 located outside the second luminescent region AA2 is also removed, thereby ensuring that the first luminescent region AA1 contains only the first luminescent material layer 310 and the second luminescent region AA2 contains only the second luminescent material layer 320. This avoids the presence of two different luminescent materials in the same luminescent region, ensuring the independent luminescence characteristics of different luminescent material layers, and thus ensuring the display effect of the display panel.

[0044] In one embodiment, see Figure 2 , Figure 2a , Figure 2b , Figure 2c , Figure 2d , Figure 2e , Figure 2fand Figure 2g . Figure 2 yes Figure 1 A flowchart illustrating one embodiment of step S400. Figure 2a yes Figure 2 A schematic diagram of one embodiment corresponding to step S410. Figure 2b yes Figure 2 A schematic diagram of one embodiment corresponding to step S420. Figure 2c yes Figure 2 A schematic diagram of one embodiment corresponding to step S430. Figure 2d yes Figure 2 A schematic diagram of one embodiment corresponding to step S440. Figure 2e yes Figure 2 A schematic diagram of one embodiment corresponding to step S450. Figure 2f yes Figure 2 A schematic diagram of one embodiment corresponding to step S460. Figure 2g yes Figure 2 A schematic diagram of an embodiment corresponding to step S470. Step S400 includes: S410: A first sacrificial layer 410 is formed on the side of the first light-emitting material layer 310 away from the array substrate 100; wherein, the first sacrificial layer 410 is an organic layer.

[0045] Specifically, in combination Figure 1c and Figure 2a The entire surface is coated using a coating process. The first sacrificial layer 410 is an organic material. After the entire surface is coated, it is baked and cured at high temperature. Since the first sacrificial layer 410 is an organic material, it is easier to remove it by a peeling process, thereby removing all the film layers on the side of the first sacrificial layer 410 away from the array substrate 100 together.

[0046] S420: A second sacrificial layer 420 is formed on the side of the first sacrificial layer 410 away from the array substrate 100; wherein, the second sacrificial layer 420 is an inorganic layer.

[0047] Specifically, in combination Figure 2a and Figure 2b The second sacrificial layer 420 is prepared on the first sacrificial layer 410 by a thin film deposition process. The second sacrificial layer 420 is an inorganic layer and is made of a different material than the first sacrificial layer 410.

[0048] S430: A first photoresist 610 is formed on the side of the second sacrificial layer 420 away from the array substrate 100.

[0049] Specifically, in combination Figure 2b and Figure 2c The first photoresist 610 is coated on the entire side of the second sacrificial layer 420 away from the array substrate 100 using a coating process.

[0050] S440: Pattern the first photoresist 610 to remove the first photoresist 610 in the second light-emitting region AA2.

[0051] Specifically, in combination Figure 2c and Figure 2d The first photoresist 610 includes either a positive photoresist or a negative photoresist. Optionally, the first photoresist 610 is a positive photoresist. The area outside the second light-emitting region AA2 is blocked by a photomask, and the first photoresist 610 in the second light-emitting region AA2 is exposed. The first photoresist 610 in the second light-emitting region AA2 is then further developed to remove it. Optionally, the first photoresist 610 is a negative photoresist. The area of ​​the second light-emitting region AA2 is blocked by a photomask, and the first photoresist 610 outside the second light-emitting region AA2 is exposed. The first photoresist 610 in the second light-emitting region AA2 is then further developed to remove it.

[0052] S450: Pattern the second sacrificial layer 420 using the remaining first photoresist 610 as a mask to remove the second sacrificial layer 420 in the second light-emitting region AA2.

[0053] Specifically, in combination Figure 2d and Figure 2e The remaining first photoresist 610 shields and protects the area outside the second light-emitting region AA2. Then, the second sacrificial layer 420 is dry-etched using a dry etching process. Only the second sacrificial layer 420 in the second light-emitting region AA2 is exposed to the dry etching environment. Therefore, only the second sacrificial layer 420 in the second light-emitting region AA2 is dry-etched away, thus achieving the patterning of the second sacrificial layer 420. Fluorine-based gas is used as the dry etching material.

[0054] S460: Remove the remaining first photoresist 610.

[0055] Specifically, in combination Figure 2e and Figure 2f The remaining first photoresist 610, i.e. the first photoresist 610 outside the second light-emitting region AA2, is removed by stripping solution.

[0056] S470: Pattern the first sacrificial layer 410 using the remaining second sacrificial layer 420 as a mask to remove the first sacrificial layer 410 in the second light-emitting region AA2 and expose the first electrode 200 in the second light-emitting region AA2.

[0057] Specifically, in combination Figure 2f and Figure 2gThe remaining second sacrificial layer 420 shields and protects the area outside the second light-emitting region AA2. Then, the first sacrificial layer 410 is dry-etched using a dry etching process. Only the first sacrificial layer 410 in the second light-emitting region AA2 is exposed to the dry etching environment. Therefore, only the first sacrificial layer 410 in the second light-emitting region AA2 is dry-etched away, thus achieving the patterning of the first sacrificial layer 410. Oxygen plasma is selected as the dry etching material.

[0058] In the above embodiment, a double sacrificial layer is used. The first sacrificial layer 410 is made of an organic material, the second sacrificial layer 420 is made of an inorganic material, and the first photoresist 610 is made of an organic material. First, the second sacrificial layer 420 is photolithographically ...

[0059] Of course, in some other implementations, only the first sacrificial layer may be set, without setting the second sacrificial layer.

[0060] In one embodiment, the thickness of the first sacrificial layer 410 is between 50 nanometers and 2 micrometers. For example, the thickness of the first sacrificial layer 410 can be 50 nanometers, 100 nanometers, 500 nanometers, 1 micrometer, 1.5 micrometers, or 2 micrometers, etc.

[0061] In one embodiment, the thickness of the second sacrificial layer 420 is between 20 nanometers and 500 nanometers. For example, the thickness of the second sacrificial layer 420 can be 20 nanometers, 50 nanometers, 100 nanometers, 300 nanometers, or 500 nanometers, etc.

[0062] In one embodiment, the material of the first sacrificial layer 410 includes a hydrolyzable organic material or an alcoholyzable organic material. A hydrolyzable organic material refers to an organic material capable of undergoing a hydrolysis reaction, meaning it dissociates in an aqueous solution and dissolves. Examples of hydrolyzable organic materials include polyvinyl alcohol. An alcoholyzable organic material refers to an organic material capable of undergoing an alcoholysis reaction, meaning it dissociates in an alcohol solution and dissolves. Examples of alcoholyzable organic materials include at least one of polyethylene terephthalate, polylactic acid, and polyurethane. Alcohol solutions include methanol, ethanol, isopropanol, n-butanol, tert-butanol, ethylene glycol, or propylene glycol. Of course, the material of the first sacrificial layer 410 is not limited to the above materials and can be other suitable materials.

[0063] In one embodiment, the material of the second sacrificial layer 420 includes silicon oxide, silicon nitride, or silicon oxynitride. Of course, the material of the first sacrificial layer 410 is not limited to the above-mentioned materials, and may be other suitable materials.

[0064] In one embodiment, see Figure 3 , Figure 3a and Figure 3b , Figure 3 yes Figure 1 A flowchart illustrating one embodiment of step S300. Figure 3a yes Figure 3 A schematic diagram of one embodiment corresponding to step S310. Figure 3b yes Figure 3 A schematic diagram of an embodiment corresponding to step S320, wherein step S3100 includes: S310: A full-surface first light-emitting material layer 310 is formed on the side of the first electrode 200 away from the array substrate 100; wherein, the material of the first light-emitting material layer 310 includes a photosensitive material.

[0065] Specifically, in combination Figure 1b and Figure 3a A coating process is used to uniformly coat the first light-emitting material onto the side of the first electrode 200 facing away from the array substrate 100. The first quantum dot light-emitting material may be itself a photosensitive material, or it may not be a photosensitive material but may be doped with a photosensitive material. The photosensitive material is used in subsequent photolithography processes to facilitate the patterning of the first light-emitting material layer 310.

[0066] S320: The first light-emitting material layer 310 is patterned using photolithography to remove the first light-emitting material layer 310 in areas other than the first light-emitting region AA1.

[0067] Specifically, in combination Figure 3a and Figure 3b The aforementioned photosensitive material includes either a positive or a negative photosensitive material. Optionally, the photosensitive material is a positive photosensitive material. A photomask is used to block the first light-emitting region AA1, exposing the first light-emitting material layer 310 outside the first light-emitting region AA1, and further developing the first light-emitting material layer 310 outside the first light-emitting region AA1 to remove the first light-emitting material layer 310 outside the first light-emitting region AA1. Optionally, the photosensitive material is a negative photosensitive material. A photomask is used to block the region outside the first light-emitting region AA1, exposing the first light-emitting material layer 310 in the first light-emitting region AA1, and further developing the first light-emitting material layer 310 outside the first light-emitting region AA1 to remove the first light-emitting material layer 310 outside the first light-emitting region AA1.

[0068] Of course, in some other embodiments, the first luminescent material layer can also be prepared using a printing process.

[0069] In one embodiment, see Figure 4 , Figure 4a and Figure 4b , Figure 4 yes Figure 1 A flowchart illustrating step S300 and an earlier embodiment. Figure 4a yes Figure 4 A schematic diagram of one embodiment of step S290. Figure 4b yes Figure 4 A schematic diagram of one embodiment of step S300, which includes, prior to step S300: S290: A full-surface first carrier layer 710 is formed on the side of the first electrode 200 away from the array substrate 100.

[0070] Specifically, the first carrier layer 710 can be formed on the side of the first electrode 200 facing away from the array substrate 100 using a vapor deposition process. The first carrier layer 710 includes at least one of a carrier injection layer and a carrier transport layer. Optionally, when the first electrode 200 is an anode, the first carrier layer 710 is a hole injection layer, or a hole transport layer, or both a hole injection layer and a hole transport layer, wherein the hole injection layer is located between the first electrode 200 and the hole transport layer. Optionally, when the first electrode 200 is a cathode, the first carrier layer 710 is an electron injection layer, or an electron transport layer, or both an electron injection layer and an electron transport layer, wherein the electron injection layer is located between the first electrode 200 and the electron transport layer.

[0071] Furthermore, combined with Figure 4b and Figure 1c After completing step S300, Figure 4b The embodiment is more Figure 1c The embodiment requires an additional first carrier layer 710. Considering that the first light-emitting material layer 310 and the second light-emitting material layer 320 have different types of light-emitting materials, in order to make the light-emitting device perform better, the carrier layer corresponding to the first light-emitting material layer 310 and the carrier layer corresponding to the second light-emitting material layer 320 are also selected differently.

[0072] In one embodiment, see Figure 5 and Figure 5a , Figure 5 yes Figure 1 A flowchart illustrating step S500 and an earlier embodiment. Figure 5a yes Figure 5A schematic diagram of one embodiment of step S490, after the preparation of the first sacrificial layer 410 and the second sacrificial layer 420 is completed, and before the above-mentioned step S500, further includes: S490: Pattern the first carrier layer 710 to expose the first electrode 200 in the second light-emitting region AA2.

[0073] Specifically, in combination Figure 5a The area outside the second light-emitting region AA2 is blocked by the second sacrificial layer 420, and the first carrier layer 710 in the second light-emitting region AA2 is dry-etched. The dry etching of the first sacrificial layer 410 and the dry etching of the first carrier layer 710 can be performed in the same step.

[0074] In one embodiment, see Figure 6 , Figure 6a , Figure 6b and Figure 6c , Figure 6 yes Figure 1 A flowchart illustrating one embodiment of step S500. Figure 6a yes Figure 6 A schematic diagram of one embodiment corresponding to step S510. Figure 6b yes Figure 6 A schematic diagram of one embodiment corresponding to step S520. Figure 6c yes Figure 6 A schematic diagram of an embodiment corresponding to step S530, wherein step S500 includes: S510: A full-surface second carrier layer 720 is formed on the side of the first electrode 200 away from the array substrate 100.

[0075] Specifically, in combination Figure 5a and Figure 6a A second carrier layer 720 is deposited on the side of the first electrode 200 facing away from the array substrate 100 using a vapor deposition process. The second carrier layer 720 covers not only the second light-emitting region AA2 but also the area outside the second light-emitting region AA2. The material of the second carrier layer 720 is different from that of the first carrier layer 710. The second carrier layer 720 includes at least one of a carrier injection layer, a carrier transport layer, and a carrier blocking layer. Optionally, when the first electrode 200 is an anode, the second carrier layer 720 is at least one of a hole injection layer, a hole transport layer, and an electron blocking layer. Optionally, when the first electrode 200 is a cathode, the second carrier layer 720 is at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.

[0076] S520: A full-surface second light-emitting material layer 320 is formed on the side of the second carrier layer 720 away from the array substrate 100.

[0077] Specifically, in combination Figure 6a and Figure 6b The second light-emitting material layer 320 is deposited on the side of the second carrier layer 720 away from the array substrate 100 using a vapor deposition process. The second light-emitting material layer 320 not only covers the second light-emitting region AA2, but also covers the area outside the second light-emitting region AA2.

[0078] S530: A full-surface third carrier layer 730 is formed on the side of the second light-emitting material layer 320 away from the array substrate 100.

[0079] Specifically, in combination Figure 6b and Figure 6c A third carrier layer 730 is deposited on the side of the second light-emitting material layer 320 facing away from the array substrate 100 using a vapor deposition process. The third carrier layer 730 covers not only the second light-emitting region AA2 but also the region outside of AA2. The third carrier layer 730 includes a carrier blocking layer. Optionally, when the first electrode 200 is an anode, the third carrier layer 730 is a hole blocking layer. Optionally, when the first electrode 200 is a cathode, the third carrier layer 730 is an electron blocking layer.

[0080] In one embodiment, see Figure 7 and Figure 7a , Figure 7 yes Figure 1 A flowchart illustrating one embodiment of step S600. Figure 7a yes Figure 7 A schematic diagram of an embodiment corresponding to step S610, wherein step S600 includes: S610: Remove the first sacrificial layer 410 to remove the second carrier layer 720, the second luminescent material layer 320 and the third carrier layer 730 in the region outside the second luminescent region AA2.

[0081] Specifically, in combination Figure 6c and Figure 7a The first sacrificial layer 410 is peeled off, along with all the films on the side of the first sacrificial layer 410 facing away from the array substrate 100. After peeling, the second carrier layer 720, the second light-emitting material layer 320, and the third carrier layer 730 are simultaneously patterned, leaving only the second carrier layer 720, the second light-emitting material layer 320, and the third carrier layer 730 in the second light-emitting region AA2. In summary, the second light-emitting material layer 320 does not require the traditional fine metal mask evaporation process; it only needs to be deposited on the entire surface. Finally, patterning is achieved by peeling off the first sacrificial layer 410, reducing the overall fabrication difficulty and further lowering the fabrication cost.

[0082] In one embodiment, see Figure 8 and Figure 8a , Figure 8 yes Figure 1 A flowchart illustrating an embodiment prior to step S700. Figure 8a yes Figure 8 A schematic diagram of an embodiment corresponding to step S690, which includes the following before step S700: S690: A full-surface fourth carrier layer 740 is formed on the side of the third carrier layer 730 facing away from the array substrate 100.

[0083] Specifically, in combination Figure 7a and Figure 8a A fourth carrier layer 740 is deposited on the side of the third carrier layer 730 facing away from the array substrate 100 using a vapor deposition process. The fourth carrier layer 740 covers not only the second light-emitting region AA2 but also the region outside the second light-emitting region AA2. The fourth carrier layer 740 includes at least one of a carrier injection layer and a carrier transport layer. Optionally, when the first electrode 200 is an anode, the fourth carrier layer 740 is at least one of an electron injection layer and an electron transport layer. Optionally, when the first electrode 200 is a cathode, the fourth carrier layer 740 is at least one of a hole injection layer and a hole transport layer.

[0084] In one embodiment, see Figure 9 , Figure 9a , Figure 9b , Figure 9c and Figure 9d , Figure 9 yes Figure 1 A flowchart illustrating an embodiment prior to step S600. Figure 9a yes Figure 9 A schematic diagram of one embodiment corresponding to step S410. Figure 9b yes Figure 9 A schematic diagram of one embodiment corresponding to step S420. Figure 9c yes Figure 9 A schematic diagram of one embodiment corresponding to step S430. Figure 9d yes Figure 9 A schematic diagram of an embodiment corresponding to step S440. Prior to step S600, the method further includes: S1000: A fourth sacrificial layer 440 is formed on the first side of the array substrate 100; wherein the fourth sacrificial layer 440 is made of the same material as the first sacrificial layer 410.

[0085] Specifically, in combination Figure 6c and Figure 9aThe fourth sacrificial layer 440 can be coated on the entire surface using a coating process. The material of the fourth sacrificial layer 440 is the same as that of the first sacrificial layer 410, and the preparation process can also refer to that of the first sacrificial layer 410.

[0086] S2000: A third sacrificial layer 430 is formed on the first side of the array substrate 100.

[0087] Specifically, in combination Figure 9a and Figure 9b The third sacrificial layer 430 is prepared on the fourth sacrificial layer 440 by a thin film deposition process. The third sacrificial layer 430 is an inorganic layer and is made of a different material than the fourth sacrificial layer 440, but can be the same as the second sacrificial layer 420.

[0088] S3000: Pattern the third sacrificial layer 430 to remove the third sacrificial layer 430 in two adjacent light-emitting regions.

[0089] Specifically, in combination Figure 9b and Figure 9c The third sacrificial layer 430 is patterned, and the third sacrificial layer 430 in two adjacent light-emitting regions is removed, while the third sacrificial layer 430 in two adjacent light-emitting regions is retained.

[0090] S4000: Using the remaining third sacrificial layer 430 as a mask, remove all film layers between two adjacent light-emitting regions on the array substrate 100.

[0091] Specifically, in combination Figure 9c and Figure 9d The third sacrificial layer 430 acts as a shield for dry etching, allowing for the etching of areas not shielded by the third sacrificial layer 430. Ultimately, all film layers between adjacent light-emitting regions are etched away, meaning the portions of the multiple charge carrier layers located between adjacent light-emitting regions are completely etched. This prevents the film layers between different light-emitting regions from interconnecting, thus improving crosstalk issues in the display panel. Simultaneously, the purpose of the fourth sacrificial layer 440 is to facilitate the easy removal of the third sacrificial layer 430 located on the second light-emitting region AA2 during subsequent sacrificial layer stripping, preventing any residue of the third sacrificial layer 430.

[0092] It needs to be further explained that, Figure 9d The application of four sacrificial layers can avoid crosstalk between adjacent pixels, while Figure 6c This application, which uses only two sacrificial layers, can reduce the residue of the sacrificial layer on the second luminescent material layer, thus helping to improve the luminescent performance of the second luminescent material layer.

[0093] In one embodiment, see Figure 10 , Figure 10a , Figure 10b and Figure 10c , Figure 10 yes Figure 9 A flowchart illustrating an embodiment prior to step S3000. Figure 10a yes Figure 10 A schematic diagram of one embodiment corresponding to step S3100. Figure 10b yes Figure 10 A schematic diagram of one embodiment corresponding to step S3200. Figure 10c yes Figure 10 A schematic diagram of an embodiment corresponding to step S33000, wherein step S3000 includes: S3100: A second photoresist 620 is formed on the side of the third sacrificial layer 430 away from the array substrate 100.

[0094] Specifically, in combination Figure 9b and Figure 10a The second photoresist 620 is applied to the entire surface using a coating process.

[0095] S3200: Pattern the second photoresist 620 to remove the second photoresist 620 between two adjacent light-emitting areas.

[0096] Specifically, in combination Figure 10a and Figure 10b The second photoresist 620 between two adjacent light-emitting areas is exposed and developed.

[0097] S3300: The third sacrificial layer 430 is patterned using the remaining second photoresist 620 as a mask.

[0098] Specifically, in combination Figure 10b and Figure 10c The third sacrificial layer 430 between two adjacent light-emitting regions is etched away.

[0099] In one embodiment, the plurality of light-emitting regions further include a third light-emitting region AA3; prior to the above step S300, the method further includes: forming a third light-emitting material layer 330 located in the third light-emitting region AA3 on the side of the first electrode 200 away from the array substrate 100, wherein the material of the third light-emitting material layer 330 includes a second quantum dot light-emitting material.

[0100] Specifically, referring to the figures above, the third luminescent material layer 330 is prepared before the first luminescent material layer 310. Both the third luminescent material layer 330 and the first luminescent material layer 310 are quantum dot luminescent materials, and the only difference between them is the color of their luminescence. Therefore, in terms of preparation, the third luminescent material layer 330 is similar to the first luminescent material layer 310.

[0101] Furthermore, the first luminescent material layer 310 emits red light, the second luminescent material layer 320 emits blue light, and the third luminescent material layer 330 emits green light. This embodiment further considers the relatively poor performance of blue quantum dot luminescent materials; therefore, the second luminescent material layer 320 uses an organic luminescent material. The resulting display panel is a hybrid of quantum dot and organic luminescent materials, which offers superior performance compared to a display panel with a single luminescent type.

[0102] This application further provides a display panel, which includes a first light-emitting material layer and a second light-emitting material layer. The material of the first light-emitting material layer is a quantum dot light-emitting material, and the material of the second light-emitting material layer is an organic light-emitting material.

[0103] The above are merely embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A method for manufacturing a display panel, characterized in that, The method includes: An array substrate is provided; wherein the array substrate has a first side and a second side disposed opposite to each other, and the array substrate includes a plurality of light-emitting regions disposed at intervals, the plurality of light-emitting regions including a first light-emitting region and a second light-emitting region; A first electrode is formed in the light-emitting region on the first side of the array substrate; A first light-emitting material layer is formed on the side of the first electrode away from the array substrate, located in the first light-emitting region; wherein the material of the first light-emitting material layer includes a first quantum dot light-emitting material; A first sacrificial layer is formed on the side of the first luminescent material layer away from the array substrate, located outside the second luminescent region; A second light-emitting material layer covering the entire surface is formed on the first side of the array substrate; wherein the second light-emitting material layer comprises an organic light-emitting material; Remove the first sacrificial layer to remove the second luminescent material layer in the region outside the second luminescent region; A second electrode is formed on the side of both the first and second light-emitting material layers that is away from the array substrate.

2. The method according to claim 1, characterized in that, The step of forming a first sacrificial layer located outside the second light-emitting region on the side of the first light-emitting material layer away from the array substrate includes: A first sacrificial layer is formed on the side of the first light-emitting material layer facing away from the array substrate; wherein, the first sacrificial layer is an organic layer; A second sacrificial layer is formed on the side of the first sacrificial layer away from the array substrate; wherein the second sacrificial layer is an inorganic layer; A first photoresist is formed on the side of the second sacrificial layer away from the array substrate; Pattern the first photoresist to remove the first photoresist from the second light-emitting region; The second sacrificial layer is patterned using the remaining first photoresist as a mask to remove the second sacrificial layer in the second light-emitting region; Remove the remaining first photoresist; The first sacrificial layer is patterned using the remaining second sacrificial layer as a mask to remove the first sacrificial layer in the second light-emitting region and expose the first electrode in the second light-emitting region.

3. The method according to claim 2, characterized in that, The material of the first sacrificial layer includes hydrolyzed organic materials or alcoholyzed organic materials, and / or the material of the second sacrificial layer includes silicon oxide, silicon nitride, or silicon oxynitride.

4. The method according to claim 2, characterized in that, The thickness of the first sacrificial layer is between 50 nanometers and 2 micrometers; The thickness of the second sacrificial layer is between 20 nanometers and 500 nanometers.

5. The method according to claim 1, characterized in that, The material of the first sacrificial layer includes hydrolyzed organic matter or alcoholyzed organic matter. The hydrolyzed organic matter includes polyvinyl alcohol, and the alcoholyzed organic matter includes at least one of polyethylene terephthalate, polylactic acid, and polyurethane.

6. The method according to claim 1, characterized in that, The step of forming a full-surface second light-emitting material layer on the first side of the array substrate includes: A second light-emitting material layer is formed on the entire surface of the first side of the array substrate using a vapor deposition process.

7. The method according to claim 1, characterized in that, The step of forming a first light-emitting material layer located in the first light-emitting region on the side of the first electrode opposite to the array substrate includes: A first light-emitting material layer is formed on the side of the first electrode facing away from the array substrate; wherein the material of the first light-emitting material layer includes a photosensitive material; The first luminescent material layer is patterned using a photolithography process to remove the first luminescent material layer in areas outside the first luminescent region.

8. The method according to claim 1, characterized in that, Before the step of forming a first light-emitting material layer located in the first light-emitting region on the side of the first electrode opposite to the array substrate, the method further includes: A full-surface first carrier layer is formed on the side of the first electrode opposite to the array substrate; Before the step of forming a full-surface second light-emitting material layer on the first side of the array substrate, wherein the second light-emitting material layer comprises an organic light-emitting material, the method further includes: The first carrier layer is patterned to expose the first electrode in the second light-emitting region.

9. The method according to claim 8, characterized in that, Before removing the first sacrificial layer, the method further includes: A third sacrificial layer is formed on the entire surface of the first side of the array substrate; The third sacrificial layer is patterned to remove the third sacrificial layer in two adjacent light-emitting regions; Using the remaining third sacrificial layer as a mask, all film layers between two adjacent light-emitting regions on the array substrate are removed.

10. The method according to claim 9, characterized in that, The third sacrificial layer is an inorganic layer. The step of patterning the third sacrificial layer to remove the third sacrificial layer from two adjacent light-emitting regions includes: A second photoresist is formed on the side of the third sacrificial layer opposite to the array substrate; The second photoresist is patterned to remove the second photoresist between two adjacent light-emitting regions; The third sacrificial layer is patterned using the remaining second photoresist as a mask.

11. The method according to claim 10, characterized in that, Prior to the step of forming a full-surface third sacrificial layer on the first side of the array substrate, the method further includes: A fourth sacrificial layer is formed on the first side of the array substrate, wherein the fourth sacrificial layer is made of the same material as the first sacrificial layer.

12. The method according to claim 8, characterized in that, The step of forming a full-surface second light-emitting material layer on the first side of the array substrate, wherein the second light-emitting material layer comprises an organic light-emitting material, includes: A second carrier layer is formed on the side of the first electrode away from the array substrate. A full-surface second light-emitting material layer is formed on the side of the second carrier layer facing away from the array substrate; A third carrier layer is formed on the side of the second light-emitting material layer facing away from the array substrate. The step of removing the first sacrificial layer to remove the second luminescent material layer in the region outside the second luminescent region includes: Remove the first sacrificial layer to remove the second carrier layer, the second luminescent material layer, and the third carrier layer from the region outside the second luminescent region.

13. The method according to claim 12, characterized in that, Before the step of forming a second electrode on the side of both the first light-emitting material layer and the second light-emitting material layer away from the array substrate, the method further includes: A fourth sublayer is formed on the side of the third sublayer facing away from the array substrate.

14. The method according to claim 1, characterized in that, The plurality of light-emitting regions further include a third light-emitting region; prior to forming a first sacrificial layer located outside the second light-emitting region on the side of the first light-emitting material layer away from the array substrate, the method further includes: A third luminescent material layer is formed on the side of the first electrode away from the array substrate, located in the third luminescent region, wherein the material of the third luminescent material layer includes a second quantum dot luminescent material.

15. The method according to claim 14, characterized in that, The first luminescent material layer emits red light, the second luminescent material layer emits blue light, and the third luminescent material layer emits green light.

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