Preparation method of display panel

Abstract

The invention provides a preparation method of a display panel. According to the invention, the silicon-based driving substrate and the light-emitting carrier plate are prepared separately, so that the production efficiency can be improved; and secondly, the influence of an evaporation process on the silicon-based driving substrate can be avoided, and the loss of the silicon-based driving substrate is reduced. Besides, compared with the prior art that the light-emitting unit is prepared on the silicon-based driving substrate and is electrically connected with the silicon-based driving substrate through a through silicon via, the light-emitting unit is arranged on the glass substrate and is bonded with the silicon-based driving substrate through the glass through hole, so that the cost of the through silicon via can be reduced; and high-frequency electrical characteristics can be improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a method for manufacturing a display panel. Background Technology

[0002] The main characteristics of silicon-based microdisplays are: silicon-based microdisplays use single-crystal silicon as a substrate, and the backplane integrates driving circuits fabricated by CMOS (Complementary Metal-Oxide-Semiconductor) technology, resulting in higher integration and top-emitting technology.

[0003] Among them, silicon-based OLED (Organic Light Emitting Display) is currently the best-performing display device type used in AR (Augmented Reality) / VR (Virtual Reality) products. Compared with conventional AMOLED (Active-Matrix Organic Light-Emitting Diodes) devices that use amorphous silicon, microcrystalline silicon, or low-temperature polycrystalline silicon thin-film transistors as backplanes, single-crystal silicon backplanes have higher carrier mobility. By depositing pixel pattern isolation layers on a silicon-based CMOS driving substrate, and then further depositing the anode, organic layer, and cathode, smaller pixel sizes can be fabricated, enabling the refinement of display pixels.

[0004] However, the process of evaporating the light-emitting unit (i.e., OLED) can easily affect the silicon-based driving circuit, making the silicon-based driving circuit unusable and increasing costs. Summary of the Invention

[0005] The main technical problem addressed by this application is to provide a method for fabricating a display panel, which solves the problem in the prior art that the silicon-based driving circuit layer is easily affected during the evaporation of the light-emitting unit.

[0006] To solve the above-mentioned technical problems, the first technical solution provided in this application is: a method for manufacturing a display panel, comprising:

[0007] A light-emitting carrier is provided; the light-emitting carrier includes a glass substrate and a light-emitting unit disposed on one side surface of the glass substrate; the light-emitting carrier is formed by cutting a light-emitting mother plate;

[0008] Provide silicon-based driving substrates;

[0009] The light-emitting carrier is bonded to the silicon-based driving substrate; the light-emitting unit is disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

[0010] in,

[0011] The steps for providing the light-emitting substrate include:

[0012] A light-emitting motherboard is provided, and the motherboard is cut to form multiple light-emitting daughterboards;

[0013] The light-emitting sub-boards are tested, and those that pass the test are selected as the light-emitting carrier boards.

[0014] The step of providing a light-emitting motherboard includes:

[0015] Define the cutting channels and display area on the surface of the glass substrate;

[0016] Anode vias and cathode vias are fabricated in the display area of ​​a glass substrate; both anode vias and cathode vias penetrate the glass substrate.

[0017] A light-emitting unit is fabricated in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer and a cathode layer stacked sequentially;

[0018] The anode layer is electrically connected to the anode via; the cathode layer is electrically connected to the cathode via.

[0019] in,

[0020] The steps of preparing anode vias and cathode vias in the display area of ​​the glass substrate are performed after the steps of preparing light-emitting units in the display area and encapsulating the light-emitting units with an encapsulation layer.

[0021] in,

[0022] The steps of preparing anode vias and cathode vias in the display area of ​​the glass substrate are performed before the steps of preparing light-emitting units in the display area and encapsulating the light-emitting units with an encapsulation layer.

[0023] The step of bonding the light-emitting carrier to the silicon-based driving substrate includes:

[0024] The light-emitting substrate is aligned and bonded to the silicon-based driving substrate to form a display panel; the anode via and the cathode via are electrically connected to the silicon-based driving substrate, respectively.

[0025] To solve the above-mentioned technical problems, the second technical solution provided in this application is: a method for manufacturing a display panel, comprising:

[0026] A light-emitting carrier is provided, which includes a glass substrate and light-emitting units disposed on one side surface of the glass substrate; the light-emitting carrier is a light-emitting mother plate;

[0027] Provide silicon-based driving substrates;

[0028] The light-emitting carrier is bonded to the silicon-based driving substrate and then cut; the light-emitting unit is disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

[0029] The step of providing the light-emitting carrier includes:

[0030] Define the cutting channels and display area on the surface of the glass substrate;

[0031] Anode vias and cathode vias are fabricated in the display area of ​​a glass substrate; both anode vias and cathode vias penetrate the glass substrate.

[0032] A light-emitting unit is fabricated in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer and a cathode layer stacked sequentially;

[0033] The anode layer is electrically connected to the anode via; the cathode layer is electrically connected to the cathode via.

[0034] in,

[0035] The steps of bonding and cutting the light-emitting carrier to the silicon-based driving substrate include:

[0036] The light-emitting substrate is aligned and bonded to the silicon-based driving substrate; the anode via and cathode via are electrically connected to the silicon-based driving substrate, respectively.

[0037] The light-emitting substrate and the silicon-based driving substrate are cut along the cutting path to form multiple display panels.

[0038] in,

[0039] After the steps of bonding and dicing the light-emitting carrier to the silicon-based driving substrate, the process further includes:

[0040] The display panel is tested.

[0041] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a method for fabricating a display panel. The method includes: providing a light-emitting carrier; the light-emitting carrier includes a glass substrate and light-emitting units disposed on one side surface of the glass substrate; the light-emitting carrier is formed by cutting a light-emitting mother plate. A silicon-based driving substrate is provided. The light-emitting carrier and the silicon-based driving substrate are bonded together; the light-emitting units are disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier. This application fabricates the silicon-based driving substrate and the light-emitting carrier separately, which can improve production efficiency; secondly, it can avoid the influence of the vapor deposition process on the silicon-based driving substrate, reducing the loss of the silicon-based driving substrate. Furthermore, compared to the prior art where the light-emitting units are fabricated on the silicon-based driving substrate and electrically connected to it through through-silicon vias (TSVs), this application disposes the light-emitting units on the glass substrate, and the light-emitting units are bonded to the silicon-based driving substrate through glass TSVs, which can reduce the cost of TSVs and improve high-frequency electrical characteristics. Attached Figure Description

[0042] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0043] Figure 1 This is a schematic flowchart of one embodiment of the method for manufacturing a display panel provided in this application;

[0044] Figure 2 yes Figure 1 Structural diagrams corresponding to one embodiment of steps S1-10 to S1-30;

[0045] Figure 3 yes Figure 1 A flowchart illustrating one of the implementation methods for steps S1-10.

[0046] Figure 4 yes Figure 3 A schematic flowchart of an embodiment of a light-emitting motherboard is provided in steps S1-11.

[0047] Figure 5 yes Figure 3 In step S1-11, a schematic diagram of the structure corresponding to one embodiment of a light-emitting motherboard is provided;

[0048] Figure 6 yes Figure 5 Schematic diagram of the cross-sectional structure at the middle EE;

[0049] Figure 7 yes Figure 1 Structural diagrams corresponding to the implementation method of step S1-10;

[0050] Figure 8 yes Figure 7 Schematic diagram of the cross-sectional structure at the middle FF point;

[0051] Figure 9 This is a schematic flowchart of another embodiment of the method for manufacturing a display panel provided in this application;

[0052] Figure 10 yes Figure 9 A flowchart illustrating an implementation method for step S2-30;

[0053] Figure 11 yes Figure 9 Schematic diagrams of the structures corresponding to one of the embodiments in steps S2-10 to S2-30.

[0054] Explanation of icon numbers:

[0055] 10. Light-emitting carrier board; 101. Light-emitting mother board; 102. Light-emitting daughter board; 11. Glass substrate; 111. Anode via; 112. Cathode via; 113. Cutting channel; 114. Display area; 12. Light-emitting unit; 121. Anode layer; 122. Light-emitting layer; 123. Cathode layer; 13. Isolation structure; 14. Encapsulation layer; 20. Silicon-based driving substrate; 21. Silicon substrate; 22. Driving circuit layer; 100. Display panel. Detailed Implementation

[0056] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0057] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0058] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0059] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0060] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0061] Please see Figures 1 to 8 , Figure 1 This is a schematic flowchart illustrating one embodiment of the display panel manufacturing method provided in this application. Figure 2 yes Figure 1 Structural diagrams corresponding to one embodiment of steps S1-10 to S1-30 are shown below. Figure 3 yes Figure 1 A flowchart illustrating one of the implementation methods for steps S1-10. Figure 4 yes Figure 3 Step S1-11 provides a schematic flowchart of one embodiment of a light-emitting motherboard. Figure 5 yes Figure 3 In step S1-11, a schematic diagram of the structure corresponding to one embodiment of a light-emitting motherboard is provided. Figure 6 yes Figure 5 Schematic diagram of the cross-sectional structure at the EE section. Figure 7 yes Figure 1 A schematic diagram of the structure corresponding to the implementation method in step S1-10. Figure 8 yes Figure 7 A schematic diagram of the cross-sectional structure at the FF point.

[0062] This application provides a method for fabricating a display panel. The method includes: providing a light-emitting carrier 10; the light-emitting carrier 10 includes a glass substrate 11 and light-emitting units 12 disposed on one side surface of the glass substrate 11; the light-emitting carrier 10 is formed by cutting a light-emitting mother plate 101. A silicon-based driving substrate 20 is provided. The light-emitting carrier 10 and the silicon-based driving substrate 20 are bonded together; the light-emitting units 12 are disposed on the side of the glass substrate 11 away from the silicon-based driving substrate 20, and the dimensions of the silicon-based driving substrate 20 match the dimensions of the light-emitting carrier 10.

[0063] This application separates the fabrication of the silicon-based driving substrate 20 and the light-emitting carrier 10, which improves production efficiency. Secondly, it avoids the impact of the vapor deposition process on the silicon-based driving substrate 20, reducing losses. Furthermore, compared to the prior art where the light-emitting unit 12 is fabricated on the silicon-based driving substrate 20 and electrically connected to it via through-silicon vias (TSVs), this application places the light-emitting unit 12 on the glass substrate 11, and bonds the light-emitting unit 12 to the silicon-based driving substrate 20 via glass TSVs. This reduces the cost of TSVs and improves high-frequency electrical characteristics.

[0064] In some embodiments, the specific steps of the method for manufacturing the display panel include:

[0065] S1-10: Provides a light-emitting carrier plate; the light-emitting carrier plate includes a glass substrate and a light-emitting unit disposed on one side surface of the glass substrate; the light-emitting carrier plate is formed by cutting a light-emitting mother plate.

[0066] Specifically, a light-emitting carrier plate 10 is provided. The light-emitting carrier plate 10 includes a glass substrate 11 and light-emitting units 12 disposed on one side surface of the glass substrate 11. The light-emitting carrier plate 10 is formed by cutting a light-emitting mother plate 101.

[0067] In one embodiment, the step of providing the light-emitting carrier in steps S1-10 includes:

[0068] S1-11: Provide a light-emitting motherboard, cut the light-emitting motherboard to form multiple light-emitting daughterboards.

[0069] Specifically, a light-emitting mother plate 101 is provided, and the light-emitting mother plate 101 is cut to form a plurality of light-emitting sub-plates 102.

[0070] In the production of the display panel 100, in order to reduce costs and achieve large-scale mass production, multiple light-emitting sub-panels 102 are usually made on a large light-emitting motherboard 101, and then the large light-emitting motherboard 101 is cut into several individual light-emitting sub-panels 102 through a cutting process.

[0071] The number of light-emitting units 12 on the light-emitting motherboard 101 is not limited here, and can be selected according to actual needs.

[0072] The size and shape of each of the multiple light-emitting sub-plates 102 formed by cutting the light-emitting carrier plate 10 are not limited and can be selected according to actual needs. The shapes of the light-emitting sub-plates 102 can be the same or different. The sizes of the light-emitting sub-plates 102 can be the same or different.

[0073] In this embodiment, all light-emitting sub-boards 102 are identical in size and shape. The light-emitting sub-boards 102 are square.

[0074] In other embodiments, the cross-sectional shape of the light-emitting sub-plate 102 can be a regular or irregular shape such as a circle, triangle or pentagon.

[0075] In one specific embodiment, the step of providing a light-emitting motherboard in steps S1-11 includes:

[0076] S1-111: Define the cut lines and display area on the surface of the glass substrate.

[0077] Specifically, a cutting path 113 and a display area 114 are defined on the surface of the glass substrate 11. The display area 114 is used for the light-emitting unit 12, and the cutting path 113 is used for cutting, so as to reduce damage to the light-emitting unit 12 in the display area 114 during the subsequent cutting of the light-emitting motherboard 101 along the cutting path 113.

[0078] S1-112: An anode via and a cathode via are fabricated in the display area of ​​a glass substrate; both the anode via and the cathode via penetrate the glass substrate.

[0079] Specifically, an anode via 111 and a cathode via 112 are formed in the display area 114 of the glass substrate 11. Both the anode via 111 and the cathode via 112 penetrate the glass substrate 11 in the thickness direction of the glass substrate 11.

[0080] S1-113: A light-emitting unit is prepared in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer and a cathode layer stacked in sequence; wherein, the anode layer is electrically connected to an anode via; and the cathode layer is electrically connected to a cathode via.

[0081] Specifically, a light-emitting unit 12 is fabricated in the display area 114, and an encapsulation layer 14 is provided to encapsulate the light-emitting unit 12. The light-emitting unit 12 includes an anode layer 121, a light-emitting layer 122, and a cathode layer 123 stacked sequentially; wherein, the anode layer 121 is electrically connected to an anode via 111. The cathode layer 123 is electrically connected to a cathode via 112.

[0082] The light-emitting unit 12 is an OLED. At least one color of light-emitting unit 12 is disposed on the light-emitting motherboard 101. Each light-emitting unit 12 emits light of one color. There are no restrictions on the color or type of color of the light-emitting unit 12; it can be selected according to actual needs.

[0083] In this embodiment, the anode layer 121 is disposed on one side surface of the glass substrate 11. Each light-emitting carrier 10 includes three different colored light-emitting units 12. The light emitted by the three different colored light-emitting units 12 is red, green, and blue, respectively. In each light-emitting carrier 10, the light-emitting units 12 are arranged in a matrix.

[0084] In other embodiments, the multiple light-emitting units 12 in the light-emitting carrier 10 can be arranged in other ways, which are not limited here and can be selected according to actual needs.

[0085] In this embodiment, one light-emitting unit 12 is provided corresponding to one anode via 111, and the light-emitting unit 12 covers the corresponding anode via 111.

[0086] In other embodiments, one light-emitting unit 12 may correspond to multiple anode vias 111; and / or, in a direction parallel to the glass substrate 11, the light-emitting unit 12 and the corresponding anode via 111 may be staggered or tangentially arranged.

[0087] In this embodiment, the cathode via 112 is located at the edge of each light-emitting carrier plate 10.

[0088] In other embodiments, cathode vias 112 are provided between at least a portion of the light-emitting units 12 in a direction parallel to the glass substrate 11.

[0089] In this embodiment, both the cathode via 112 and the anode via 111 are filled with conductive material. The material of the conductive material is not limited and can be selected according to actual needs.

[0090] In some embodiments, the size of the light-emitting unit 12 is 6 micrometers to 15 micrometers.

[0091] In other embodiments, the size of the light-emitting unit 12 can be other values.

[0092] The light-emitting unit 12 can be fabricated using FMM (Fine Metal Mask) technology or a non-FMM technology. There is no restriction here, and the choice can be made according to actual needs.

[0093] An isolation structure 13 also needs to be set between the light-emitting units 12 to isolate the light-emitting layers 122 between light-emitting units 12 of different colors, so as to avoid pixel crosstalk problems.

[0094] In this embodiment, the light-emitting unit 12 is fabricated using the FMM process. The isolation structure 13 is made of a non-conductive insulating material, and the cathode layer 123 is located on the side of the isolation structure 13 away from the glass substrate 11. The isolation structure 13 only serves to isolate the light-emitting layer 122 of the light-emitting unit 12.

[0095] In other embodiments, the light-emitting unit 12 can be fabricated using a process without FMM (Follicular Unit Manufacturing). The isolation structure 13 has a conductive portion for electrically connecting the cathode layer 123 of the adjacent light-emitting unit 12. The isolation structure 13 not only physically isolates the light-emitting layer 122 of the light-emitting unit 12, but also physically isolates the cathode layer 123 of the light-emitting unit 12.

[0096] The encapsulation layer 14 covers the light-emitting unit 12 and the isolation structure 13. The material of the encapsulation layer 14 is not limited here and can be selected according to actual needs.

[0097] The encapsulation layer 14 covers at least the display area 114. The encapsulation layer 14 may or may not cover the cut track 113.

[0098] In this embodiment, the encapsulation layer 14 covers the display area 114 and the cut channel 113.

[0099] In some embodiments, the steps of fabricating anode vias 111 and cathode vias 112 in the display area 114 of the glass substrate 11 are performed after the steps of fabricating light-emitting units 12 in the display area 114 and encapsulating the light-emitting units 12 with an encapsulation layer 14. That is, steps S1-112 are performed after steps S1-113.

[0100] In some other embodiments, the steps of fabricating anode vias 111 and cathode vias 112 in the display area 114 of the glass substrate 11 are performed before the steps of fabricating light-emitting units 12 in the display area 114 and encapsulating the light-emitting units 12 with an encapsulation layer 14. That is, steps S1-112 are performed before steps S1-113.

[0101] S1-12: Test the light-emitting sub-boards and select qualified light-emitting sub-boards as light-emitting carriers.

[0102] Specifically, the light-emitting sub-board 102 is tested, and the qualified light-emitting sub-board 102 is selected as the light-emitting carrier board 10.

[0103] It should be understood that during the process of cutting the light-emitting mother board 101 to form the light-emitting daughter board 102, considering that it will cause a certain degree of yield loss to the glass substrate 11 of the light-emitting daughter board 102, the light-emitting daughter board 102 is inspected first to detect defective products in advance, prevent them from entering the next bonding process, and avoid wasting the silicon-based driving substrate 20. It can also improve the yield.

[0104] It should be noted that all light-emitting sub-boards 102 can be called light-emitting carriers 10. In order to improve the bonding yield in the subsequent process, this embodiment only selects qualified light-emitting sub-boards 102 as light-emitting carriers 10 for subsequent bonding steps.

[0105] S1-20: Provides silicon-based driving substrate.

[0106] Specifically, a silicon-based driving substrate 20 is provided.

[0107] The silicon-based driving substrate 20 includes a silicon substrate 21 and a driving circuit layer 22.

[0108] Silicon substrate 21 refers to a substrate based on monocrystalline silicon material.

[0109] The driving circuit layer 22 includes an active driving circuit (not shown) integrated on the silicon substrate 21 using CMOS (Complementary Metal-Oxide-Semi conductor) technology.

[0110] It should be noted that steps S1-10 and S1-20 are not in any particular order. Steps S1-10 and S1-20 can be prepared simultaneously; or, step S1-10 can be prepared before step S1-20; or, step S1-10 can be prepared after step S1-20.

[0111] S1-30: Bond the light-emitting carrier to the silicon-based driving substrate; the light-emitting unit is disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

[0112] Specifically, the light-emitting carrier 10 is bonded to the silicon-based driving substrate 20. The light-emitting unit 12 is disposed on the side of the glass substrate 11 away from the silicon-based driving substrate 20, and the size of the silicon-based driving substrate 20 matches the size of the light-emitting carrier 10.

[0113] In this embodiment, the silicon-based driving substrate 20 and the light-emitting carrier 10 are prepared separately, which can improve production efficiency. Secondly, it can also avoid the influence of the vapor deposition process on the silicon-based driving substrate 20 and reduce the loss of the silicon-based driving substrate 20. In other words, from a process perspective, the separate preparation of the silicon-based driving substrate 20 and the light-emitting carrier 10 can not only improve the yield but also reduce the cost.

[0114] In one specific embodiment, the step of bonding the light-emitting carrier to the silicon-based driving substrate in steps S1-30 includes: aligning and bonding the light-emitting carrier to the silicon-based driving substrate to form a display panel; and electrically connecting the anode via and the cathode via to the silicon-based driving substrate, respectively.

[0115] It should be understood that, compared with through-silicon via (TSV) technology, glass via technology has the advantages of superior high-frequency electrical characteristics, low cost, simple process flow, and strong mechanical stability.

[0116] Compared to the prior art where the light-emitting unit 12 is fabricated on the silicon-based driving substrate 20 and electrically connected to the silicon-based driving substrate 20 through through-silicon vias, this application places the light-emitting unit 12 on the glass substrate 11 and bonds the light-emitting unit 12 to the silicon-based driving substrate 20 through the glass via. This reduces the cost of the through-silicon via and improves the high-frequency electrical characteristics.

[0117] In essence, compared to existing Micro OLED (Micro Organic Light-Emitting Diodes) technology, this application's method of separately fabricating the silicon-based driving substrate 20 and the light-emitting carrier 10 can improve production efficiency and reduce costs. Furthermore, by placing the light-emitting unit 12 on the glass substrate 11 and bonding it to the silicon-based driving substrate 20 through glass vias, the cost of silicon vias can be further reduced, and high-frequency electrical characteristics can be improved. In addition, this application's method of first fabricating the light-emitting mother board 101 and cutting it into multiple light-emitting carriers 10 before bonding them to the silicon-based driving substrate 20 can simplify the manufacturing process and reduce costs of the display panel 100.

[0118] Please see Figures 1 to 11 , Figure 9 This is a schematic flowchart of another embodiment of the display panel manufacturing method provided in this application. Figure 10 yes Figure 9 A flowchart illustrating one of the implementation methods in step S2-30. Figure 11 yes Figure 9 Schematic diagrams of the structures corresponding to one of the embodiments in steps S2-10 to S2-30.

[0119] This application provides a method for fabricating a display panel. The method includes: providing a light-emitting carrier 10, the light-emitting carrier 10 including a glass substrate 11 and light-emitting units 12 disposed on one side surface of the glass substrate 11; the light-emitting carrier 10 is a light-emitting mother board 101; providing a silicon-based driving substrate 20; bonding the light-emitting carrier 10 to the silicon-based driving substrate 20 and cutting it; the light-emitting units 12 are disposed on the side of the glass substrate 11 away from the silicon-based driving substrate 20, and the size of the silicon-based driving substrate 20 matches the size of the light-emitting carrier 10.

[0120] This application separates the fabrication of the silicon-based driving substrate 20 and the light-emitting carrier 10, which improves production efficiency. Secondly, it avoids the impact of the vapor deposition process on the silicon-based driving substrate 20, reducing losses. Furthermore, compared to the prior art where the light-emitting unit 12 is fabricated on the silicon-based driving substrate 20 and electrically connected to it via through-silicon vias (TSVs), this application places the light-emitting unit 12 on the glass substrate 11, and bonds the light-emitting unit 12 to the silicon-based driving substrate 20 via glass TSVs. This reduces the cost of TSVs and improves high-frequency electrical characteristics.

[0121] In some embodiments, the specific steps of the method for manufacturing the display panel include:

[0122] S2-10: Provides a light-emitting carrier plate, which includes a glass substrate and light-emitting units disposed on one side surface of the glass substrate; the light-emitting carrier plate is a light-emitting mother plate.

[0123] Specifically, a light-emitting carrier 10 is provided. The light-emitting carrier 10 includes a glass substrate 11 and a light-emitting unit 12 disposed on one side surface of the glass substrate 11. The light-emitting carrier 10 is a light-emitting mother plate 101.

[0124] The structure of the light-emitting motherboard 101 is as described above and see also... Figure 5 and Figure 6 This will not be elaborated upon here.

[0125] In one embodiment, the step of providing the light-emitting carrier in step S2-10 includes:

[0126] S2-11: Define the cut lines and display area on the surface of the glass substrate.

[0127] S2-12: Anode vias and cathode vias are fabricated in the display area of ​​the glass substrate. Both anode vias and cathode vias penetrate the glass substrate.

[0128] S2-13: A light-emitting unit is prepared in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer and a cathode layer stacked in sequence; wherein, the anode layer is electrically connected to an anode via; and the cathode layer is electrically connected to a cathode via.

[0129] Steps S2-11 are the same as steps S1-111, and will not be repeated here as described above.

[0130] Steps S2-12 are the same as steps S1-112, and will not be repeated here as described above.

[0131] Steps S2-13 are the same as steps S1-113, and will not be repeated here as described above.

[0132] S2-20: Provides silicon-based driving substrates.

[0133] Specifically, a silicon-based driving substrate 20 is provided.

[0134] The structure and fabrication sequence of the silicon-based driving substrate 20 are described above and will not be repeated here.

[0135] S2-30: Bond the light-emitting carrier to the silicon-based driving substrate and cut it; the light-emitting unit is located on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

[0136] Specifically, the light-emitting carrier 10 is bonded to the silicon-based driving substrate 20 and then cut. The light-emitting unit 12 is disposed on the side of the glass substrate 11 away from the silicon-based driving substrate 20, and the size of the silicon-based driving substrate 20 matches the size of the light-emitting carrier 10.

[0137] In one embodiment, the steps of bonding and cutting the light-emitting carrier to the silicon-based driving substrate in steps S2-30 include:

[0138] S2-31: Align and bond the light-emitting carrier with the silicon-based driving substrate; the anode via and cathode via are electrically connected to the silicon-based driving substrate respectively.

[0139] Specifically, the light-emitting carrier 10 is aligned and bonded to the silicon-based driving substrate 20. The anode via 111 and the cathode via 112 are electrically connected to the silicon-based driving substrate 20, respectively.

[0140] The size of the light-emitting carrier 10 is adapted to the size of the silicon-based driving substrate 20.

[0141] S2-32: Cut the light-emitting substrate and silicon-based driving substrate along the cutting path to form multiple display panels.

[0142] Specifically, the bonded light-emitting substrate 10 and silicon-based driving substrate 20 are cut along the cutting path 113 to form a plurality of display panels 100.

[0143] In some embodiments, after the steps of bonding and cutting the light-emitting carrier to the silicon-based driving substrate in steps S1-30, the method further includes: inspecting the display panel.

[0144] Specifically, the display panel 100 is tested.

[0145] It should be understood that during the process of bonding the light-emitting motherboard 101 to the silicon-based driving substrate 20 and then cutting it to form multiple display panels 100, a certain degree of yield loss is expected to occur to the glass substrate 11 and the silicon-based driving substrate 20. Inspecting the cut display panels 100 can eliminate defective products.

[0146] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0147] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A method for manufacturing a display panel, characterized in that, include: A light-emitting carrier plate is provided; the light-emitting carrier plate includes a glass substrate and a light-emitting unit disposed on one side surface of the glass substrate; the light-emitting carrier plate is formed by cutting a light-emitting mother plate; Provide silicon-based driving substrates; The light-emitting carrier is bonded to the silicon-based driving substrate; the light-emitting unit is disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

2. The method for manufacturing a display panel according to claim 1, characterized in that, The step of providing the light-emitting carrier includes: A light-emitting mother plate is provided, and the light-emitting mother plate is cut to form a plurality of light-emitting sub-plates; The light-emitting sub-boards are tested, and those that pass the test are selected as the light-emitting carrier boards.

3. The method for manufacturing a display panel according to claim 2, characterized in that, The step of providing a light-emitting motherboard includes: A cut track and a display area are defined on the surface of the glass substrate; An anode via and a cathode via are formed in the display area of ​​the glass substrate; both the anode via and the cathode via penetrate the glass substrate. The light-emitting unit is fabricated in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer, and a cathode layer stacked sequentially. The anode layer is electrically connected to the anode via; the cathode layer is electrically connected to the cathode via.

4. The method for manufacturing a display panel according to claim 3, characterized in that, The step of preparing anode vias and cathode vias in the display area of ​​the glass substrate is performed after the step of preparing the light-emitting unit in the display area and providing an encapsulation layer to encapsulate the light-emitting unit.

5. The method for manufacturing a display panel according to claim 3, characterized in that, The step of preparing anode vias and cathode vias in the display area of ​​the glass substrate is performed before the step of preparing the light-emitting unit in the display area and encapsulating the light-emitting unit with an encapsulation layer.

6. The method for manufacturing a display panel according to claim 3, characterized in that, The step of bonding the light-emitting carrier to the silicon-based driving substrate includes: The light-emitting carrier plate is aligned and bonded to the silicon-based driving substrate to form a display panel; the anode via and the cathode via are electrically connected to the silicon-based driving substrate, respectively.

7. A method for manufacturing a display panel, characterized in that, include: A light-emitting carrier is provided, the light-emitting carrier comprising a glass substrate and light-emitting units disposed on one side surface of the glass substrate; the light-emitting carrier is a light-emitting mother plate; Provide silicon-based driving substrates; The light-emitting carrier is bonded to the silicon-based driving substrate and then cut; the light-emitting unit is disposed on the side of the glass substrate away from the silicon-based driving substrate, and the size of the silicon-based driving substrate matches the size of the light-emitting carrier.

8. The method for manufacturing a display panel according to claim 7, characterized in that, The step of providing the light-emitting carrier includes: A cut track and a display area are defined on the surface of the glass substrate; An anode via and a cathode via are formed in the display area of ​​the glass substrate; both the anode via and the cathode via penetrate the glass substrate. The light-emitting unit is fabricated in the display area, and an encapsulation layer is provided to encapsulate the light-emitting unit; the light-emitting unit includes an anode layer, a light-emitting layer, and a cathode layer stacked sequentially. The anode layer is electrically connected to the anode via; the cathode layer is electrically connected to the cathode via.

9. The method for manufacturing a display panel according to claim 8, characterized in that, The steps of bonding and connecting the light-emitting carrier to the silicon-based driving substrate, and then cutting it, include: The light-emitting carrier is aligned and bonded to the silicon-based driving substrate; the anode via and the cathode via are electrically connected to the silicon-based driving substrate respectively; The light-emitting carrier and the silicon-based driving substrate are cut along the cutting path to form multiple display panels.

10. The method for manufacturing a display panel according to claim 7, characterized in that, After the steps of bonding and dicing the light-emitting carrier to the silicon-based driving substrate, the method further includes: The display panel is tested.

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