Preparation method of temperature sensor array and temperature sensor array

Abstract

The invention discloses a preparation method of a temperature sensor array and the temperature sensor array, the preparation method adopts a nanoimprint technology to prepare and form a patterned groove structure on one side of a substrate, a sensing unit preparation area in the patterned groove structure comprises a plurality of first grooves, a connecting line area comprises a plurality of second grooves, and the first grooves are communicated with the second grooves. The wire arrangement area comprises a plurality of third grooves. And filling the first groove with a material to form a temperature sensor in the sensing unit preparation area, and filling the second groove with a material to prepare a connecting line in the connecting line area. And filling the third groove with a material so as to prepare a plurality of flat cable structures in the flat cable area, and respectively connecting the temperature sensors and the flat cable structures with connecting wires so as to form a temperature sensor array. The nanometer imprinting technology is adopted to form the micron-sized patterned groove structure, the line width is small, the line width deviation is small, high-consistency preparation is achieved, in addition, the linear density is high, the connecting line, the temperature sensor and the flat cable structure are integrally prepared, and high-density layout is achieved.

Description

Technical Field

[0001] This invention relates to the field of temperature sensor technology, and in particular to a method for fabricating a temperature sensor array and the temperature sensor array itself. Background Technology

[0002] In the field of temperature sensors, positive temperature coefficient (PTC) resistance thermometers are widely used in high-end laboratory equipment, incubators, and high-precision industrial process measurements due to their advantages such as high accuracy, good stability, and good linearity. Currently, the traditional manufacturing processes for PTC temperature sensors mainly include wire-wound, MEMS (microelectromechanical systems) processes, and traditional printing methods.

[0003] In existing technologies, wire-wound processes struggle to achieve high-density, miniaturized array layouts. MEMS processes, when arrayed, experience a sharp increase in manufacturing costs due to high equipment costs and process complexity. Furthermore, the high resistance of the array interconnects fabricated using MEMS processes results in low integration levels for temperature sensors. Traditional printing methods, limited by resolution and uniformity, struggle to guarantee consistency and reliability between array units. Therefore, despite a large number of patent documents concerning thin-film devices, most remain at the theoretical or laboratory stage, failing to translate into practically applicable products. This is because, while some solutions propose functional characteristics such as temperature response curves, their implementation is often constrained by insufficient processing precision and material limitations, making it difficult for devices to simultaneously meet the requirements of high precision, high stability, and good repeatability. Moreover, due to limitations in processes and materials, existing technologies also struggle to achieve structural refinement, device miniaturization, and high-density system integration, thus hindering their widespread adoption and application in practical industrial scenarios. Summary of the Invention

[0004] This invention provides a method for fabricating a temperature sensor array and the temperature sensor array itself. It employs nanoimprint technology to form a micron-scale patterned groove structure, resulting in small linewidths and small linewidth deviations, achieving highly consistent fabrication. Furthermore, it achieves high line density by integrating the connecting lines, temperature sensors, and wiring structure into a single fabrication, thus realizing a high-density layout.

[0005] In a first aspect, embodiments of the present invention provide a method for fabricating a temperature sensor array, the method comprising:

[0006] Provide substrate;

[0007] A patterned groove structure is formed on one side of the substrate using nanoimprint lithography. The patterned groove structure includes a ribbon cable area, multiple sensing unit fabrication areas, and multiple connecting line areas. The sensing unit fabrication areas include multiple first grooves, the connecting line areas include multiple second grooves, and the ribbon cable areas include multiple third grooves.

[0008] Material is filled into the first groove to form a temperature sensor in the sensing unit fabrication area;

[0009] Material is filled into the second groove to prepare a connecting wire in the connecting wire area;

[0010] Material is filled into the third groove to prepare multiple ribbon cable structures in the ribbon cable area. The connecting lines are respectively connected to the temperature sensor and the ribbon cable structures to form the temperature sensor array.

[0011] Optionally, the sensing unit fabrication area includes a temperature-sensitive area, the temperature-sensitive area includes a plurality of first groove portions, the plurality of first groove portions extend along a first direction, and the plurality of first groove portions are alternately connected along a second direction, wherein the first direction intersects the second direction;

[0012] Filling the first groove with material to form a temperature sensor in the sensing unit fabrication area includes:

[0013] A first temperature-sensitive wire is formed by filling the first groove portion with a temperature-sensitive material, and multiple first temperature-sensitive wires are alternately electrically connected along the second direction to form a temperature-sensitive structure.

[0014] Optionally, the sensing unit fabrication area further includes a first electrode fabrication area and a second electrode fabrication area, the first electrode fabrication area and the second electrode fabrication area are located on both sides of the temperature-sensitive area, and both the first electrode fabrication area and the second electrode fabrication area include a plurality of second groove portions;

[0015] After filling the first groove with material to form a temperature sensor in the sensing unit fabrication area, the process further includes:

[0016] A first conductive material is filled into the second groove portion to form a first electrode structure and a second electrode structure of the temperature sensor on both sides of the temperature-sensitive structure, and the temperature-sensitive structure is electrically connected to the first electrode structure and the second electrode structure, respectively.

[0017] Optionally, the sensing unit fabrication area further includes a first resistance calibration area, which includes a plurality of third groove portions;

[0018] After filling the first groove portion with a temperature-sensitive material to form the first temperature-sensitive line, the process further includes:

[0019] The third groove is filled with a second conductive material to form a first adjustment portion. A plurality of the first adjustment portions are alternately electrically connected along the first direction to form a plurality of first adjustment structures. The plurality of first adjustment structures are all arranged in parallel with the temperature-sensitive structure, and the plurality of first adjustment structures are arranged in parallel with each other. The number of series turns of the first adjustment portion or the extension length of the first adjustment portion is proportional to the adjustment resistance value of the corresponding first adjustment structure.

[0020] Optionally, the sensing unit fabrication area further includes a second resistance calibration area, which includes a plurality of fourth groove portions;

[0021] After filling the first groove portion with a temperature-sensitive material to form the first temperature-sensitive line, the process further includes:

[0022] The fourth groove is filled with a second conductive material to prepare a second adjustment section. Multiple second adjustment sections are connected in parallel to form multiple second adjustment structures. The second adjustment structure is connected in series with the temperature-sensitive structure. The number of parallel turns of the second adjustment section is inversely proportional to the adjustment resistance value of the corresponding second adjustment structure.

[0023] Optionally, filling the first groove portion with a temperature-sensitive material to form a first temperature-sensitive line includes:

[0024] The first sub-layer is prepared in the first groove section by a scraping method;

[0025] The second and third sublayers are prepared by electroplating on the side of the first sublayer away from the substrate.

[0026] Optionally, the material of the first sublayer includes at least one of conductive metal nanoparticles, nanowire materials, bulk metals, carbon powder, conductive polymers, carbon nanotubes, graphene, or MXene.

[0027] The materials of the second and third sublayers include one of silver, copper, nickel, platinum, or gold.

[0028] Optionally, the depth of the first groove structure is D1, where D1 satisfies: 1μm≤D1≤50μm; the width of the first groove structure is L1, where L1 satisfies: 1μm≤L1≤50μm; and the distance between two adjacent first groove structures is D2, where D2 satisfies: D2≥1μm.

[0029] Optionally, the area of ​​the temperature sensor is S1, where S1 ≤ 5 mm × 5 mm; and the thickness of the temperature sensor is D3, where D3 < 10 μm.

[0030] Secondly, embodiments of the present invention also provide a temperature sensor array, which is prepared using the preparation method described in any of the first aspects.

[0031] In summary, this invention employs nanoimprint lithography to fabricate a patterned groove structure on one side of a substrate. The patterned groove structure includes a sensing unit fabrication area comprising multiple first grooves, a connecting line area comprising multiple second grooves, and a wiring area comprising multiple third grooves. Material is filled into the first grooves to form a temperature sensor in the sensing unit fabrication area, and material is filled into the second grooves to fabricate connecting lines in the connecting line area. Material is filled into the third grooves to fabricate multiple wiring structures in the wiring area. The connecting lines connect the temperature sensor and the wiring structures to form a temperature sensor array. This invention uses nanoimprint lithography to form a micron-scale patterned groove structure, resulting in small linewidths and minimal linewidth deviations, achieving highly consistent fabrication. Furthermore, it achieves high line density and integrates the connecting lines, temperature sensor, and wiring structures, resulting in a high-density layout. Attached Figure Description

[0032] Figure 1 This is a schematic flowchart of a method for fabricating a temperature sensor array according to an embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the structure of a temperature sensor array provided in an embodiment of the present invention;

[0034] Figure 3 This is a partial cross-sectional schematic diagram of the temperature sensor array provided in an embodiment of the present invention;

[0035] Figure 4 This is a schematic flowchart of another method for fabricating a temperature sensor array provided in an embodiment of the present invention;

[0036] Figure 5 This is a schematic diagram of the specific structure of a temperature sensor provided in an embodiment of the present invention;

[0037] Figure 6 This is a partial cross-sectional view of a temperature-sensitive region provided in an embodiment of the present invention;

[0038] Figure 7 This is a schematic flowchart of another method for fabricating a temperature sensor array provided in an embodiment of the present invention. Detailed Implementation

[0039] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0040] Figure 1 This is a schematic flowchart of a method for fabricating a temperature sensor array according to an embodiment of the present invention. Figure 2 This is a schematic diagram of a temperature sensor array provided in an embodiment of the present invention. Figure 3 This is a partial cross-sectional schematic diagram of a temperature sensor array provided in an embodiment of the present invention. See also... Figures 1-3 The preparation method includes:

[0041] S110 provides a substrate.

[0042] Specifically, such as Figure 2 and Figure 3 As shown, the substrate 10 can be either a flexible substrate or a rigid substrate; this embodiment of the invention does not impose any limitations on this, and those skilled in the art can configure it as needed. The substrate 10 serves a supporting function. The flexible substrate can be made of polymer flexible substrates such as PET, PEN, PVB, PVA, PU, ​​TPU, PI, PVDF, PDMS, and Ecoflex. The rigid substrate can be made of rigid substrates such as silicon wafers or ceramics, which can be used to fabricate temperature sensors.

[0043] S120: A patterned groove structure is formed on one side of the substrate using nanoimprint lithography.

[0044] Specifically, a layer of imprinting adhesive is spin-coated onto one side of the substrate 10. A pre-prepared patterned template is aligned with the substrate 10 and pressed into the imprinting adhesive layer on the surface of the substrate 10. Under certain pressure, the raised structures on the patterned template push away the adhesive, directly contacting the substrate 10 to form a groove structure, while the recessed structures on the patterned template fill the adhesive, thereby transferring the pattern on the patterned template to the surface of the substrate 10 to form a patterned groove structure on one side of the substrate 10. The patterned groove structure includes a wiring area AA, multiple temperature unit fabrication areas BB, and multiple connecting line areas CC. The sensing unit fabrication area BB includes multiple first grooves 100, the connecting line area CC includes multiple second grooves (not shown in the figure), and the wiring area AA includes multiple third grooves (not shown in the figure). That is, in this embodiment of the invention, through nanoimprint technology, the grooves of the sensing unit fabrication area BB, the connecting line area CC, and the wiring area AA can be directly formed on the substrate 10 using an integrated process, which is beneficial for realizing a highly integrated temperature sensor array and can reduce costs. Furthermore, nanoimprint lithography can achieve precise control of micron-level linewidths (ranging from 1μm to 50μm). For example, the linewidth of the conductor can reach several micrometers, the linewidth deviation (i.e., the width deviation of the groove) can be less than 100nm, and the line density can reach 500 conductors / mm. This means that within a width of 1000mm, there can be 500 lines, resulting in very narrow and long conductors (i.e., the width and length of the groove). This allows for a larger resistance and achieves high-precision testing results. Moreover, the small linewidth deviation ensures high consistency between the fabrication zones (BB) of multiple temperature units and high yield for mass production, with linearity reaching over 99.99%.

[0045] S130, fill the first groove with material to form a temperature sensor in the sensing unit fabrication area.

[0046] Specifically, a temperature-sensitive material or a conductive material is filled into the first groove 100 to form a wire within the groove. Multiple wires are arranged and electrically connected in a regular pattern, thereby forming a temperature sensor 20 within the sensing unit fabrication area BB. It is understandable that... Figure 2 The example described uses a 3×3 array temperature sensor, but this is not a limitation. In other embodiments, a 2×3 array temperature sensor or a 3×2 array temperature sensor may also be used, and those skilled in the art can set it as needed.

[0047] S140. Fill the second groove with material to prepare connecting wires in the connecting wire area, and fill the third groove with material to prepare multiple ribbon cable structures in the ribbon cable area. The connecting wires are respectively connected to the temperature sensor and the ribbon cable structures to form a temperature sensor array.

[0048] Specifically, conductive material is filled in the second groove (not shown in the figure) to form multiple connecting lines 30 in the connecting line area CC, and conductive material is filled in the third groove to form multiple ribbon cable structures 40 in the ribbon cable area AA. The ribbon cable area AA is located on one side of multiple temperature sensors 20, and the temperature sensors 20 are electrically connected to the ribbon cable structures 40 through the connecting lines 30. For example, as shown... Figure 2 In the illustrated embodiment, a temperature sensor 20 is electrically connected to four ribbon cable structures 40 via four connecting lines 30, and the ribbon cable structures 40 are used to connect to external electronic circuits. It is understood that in this embodiment, since the connecting lines 30 (second grooves) are fabricated using nanoimprint lithography, i.e., the linewidth of the connecting lines 30 is small, the resistance of the connecting lines 30 can be reduced when the distance between the temperature sensor 20 and the ribbon cable structure 40 is constant. Furthermore, the smaller linewidth of the connecting lines 30 reduces the wiring difficulty when there are a large number of temperature sensors 20, which is beneficial for achieving a high integration of the temperature sensor array.

[0049] In summary, this invention employs nanoimprint lithography to fabricate a patterned groove structure on one side of a substrate. The patterned groove structure includes a sensing unit fabrication area comprising multiple first grooves, a connecting line area comprising multiple second grooves, and a wiring area comprising multiple third grooves. Material is filled into the first grooves to form a temperature sensor in the sensing unit fabrication area, and material is filled into the second grooves to fabricate connecting lines in the connecting line area. Material is filled into the third grooves to fabricate multiple wiring structures in the wiring area. The connecting lines connect the temperature sensor and the wiring structures to form a temperature sensor array. This invention uses nanoimprint lithography to form a micron-scale patterned groove structure, resulting in small linewidths and minimal linewidth deviations, achieving highly consistent fabrication. Furthermore, it achieves high line density and integrates the connecting lines, temperature sensor, and wiring structures, resulting in a high-density layout.

[0050] Optionally, in yet another embodiment, Figure 4 This is a schematic flowchart of another method for fabricating a temperature sensor array provided in an embodiment of the present invention. Figure 5 This is a schematic diagram illustrating the specific structure of a temperature sensor provided in an embodiment of the present invention. See also... Figures 2-5 The preparation method includes: S210, using nanoimprint technology to prepare a patterned groove structure on one side of the substrate.

[0051] S220. A first temperature-sensitive line is formed by filling the first groove section with a temperature-sensitive material.

[0052] Specifically, such as Figure 2 and Figure 5As shown, the sensing unit fabrication area BB includes a temperature-sensitive area BB1, which includes multiple first groove portions 101. These first groove portions 101 extend along a first direction X and are arranged along a second direction Y. The multiple first groove portions 101 are alternately connected along the second direction Y to form a "serpentine" groove. Temperature-sensitive material is filled into the first groove portions 101 to form first temperature-sensitive lines. Multiple first temperature-sensitive lines are connected according to the constraints of the first groove portions 101 to form the temperature-sensitive structure of the temperature sensor 20. It should be noted that the resistance of the temperature-sensitive material can change with temperature; for example, the resistance of the temperature-sensitive material decreases or increases as the temperature rises. This embodiment of the invention does not limit the specific type of temperature-sensitive material; those skilled in the art can set it as needed.

[0053] It is understood that the depth of the first groove portion 101 is D1, where D1 satisfies: 1μm ≤ D1 ≤ 50μm. The width of the first groove portion 101 is L1, where L1 satisfies: 1μm ≤ L1 ≤ 50μm. The distance between two adjacent first groove portions 101 is D2, where D2 satisfies: D2 ≥ 1μm. In one embodiment, the depth D1 of the first groove portion 101 can be 5μm, the width L1 of the first groove portion 101 can be 2μm, and the distance D2 between two adjacent first groove portions 101 can be 2μm. This ensures that the linewidth of the first temperature-sensitive line formed within the first groove portion 101 of the temperature-sensitive region BB1 is small, and the line density is high, resulting in a temperature-sensitive structure with a large resistance, enabling high-precision testing. Furthermore, the greater depth of the first groove portion 101 allows for a greater thickness of the formed first temperature-sensitive line, improving connection stability.

[0054] It should also be noted that, based on the above, Figure 6 This is a partial cross-sectional view of a temperature-sensitive region provided in an embodiment of the present invention. See also... Figure 6The process of filling the first groove portion 101 with a temperature-sensitive material to form the first temperature-sensitive line includes: preparing a first sublayer 211 within the first groove portion 101 by a scraping method; and preparing a second sublayer 212 and a third sublayer 213 on the side of the first sublayer 211 away from the substrate 10 by electroplating. The material of the first sublayer 211 includes at least one of conductive metal nanoparticles, nanowire materials, bulk metal, carbon powder, conductive polymers, carbon nanotubes, graphene, or MXene. The materials of the second sublayer 212 and the third sublayer 213 include one of silver, copper, nickel, platinum, or gold. For example, silver nanoparticle ink of about 1.0 μm is formed in the first groove portion 101 by a scraping method to form a first sublayer 211. The solvent is dried by heat annealing in an oven at 50~150℃ for 15 min~16 h. Then, 0.2 μm copper is electroplated to form a second sublayer 212, and 1.3 μm nickel is electroplated to form a third sublayer 213, finally forming a first temperature-sensitive line of 2.5 μm. In this way, by combining scraping and electroplating, a first temperature-sensitive line with a thickness far exceeding that of conventional solutions is formed. Moreover, the larger thickness of the first temperature-sensitive line can reduce the sensitivity of small film thickness fluctuations to resistance and improve the stability of the connection.

[0055] S230. Fill the second groove portion with a first conductive material to prepare a first electrode structure and a second electrode structure for a temperature sensor on both sides of the temperature-sensitive structure.

[0056] For details, please refer to [link / reference]. Figure 5 The sensing unit fabrication area BB also includes a first electrode fabrication area BB2 and a second electrode fabrication area BB3. The first electrode fabrication area BB2 and the second electrode fabrication area BB3 are located on both sides of the temperature-sensitive area BB1. Both the first electrode fabrication area BB2 and the second electrode fabrication area BB3 include multiple second groove portions 102. It can be understood that the multiple second groove portions 102 may include a first sub-groove extending along the first direction X and a second sub-groove extending along the second direction Y. The multiple first sub-grooves and the multiple second sub-grooves intersect to form a mesh structure. A first conductive material is filled in the mesh structure, thereby forming a first electrode structure in the first electrode fabrication area BB1 and a second electrode structure in the second electrode fabrication area BB2. The first electrode structure and the second electrode structure are located on both sides of the temperature-sensitive structure, and both the first electrode structure and the second electrode structure are electrically connected to the temperature-sensitive structure to ensure that the fabricated temperature sensor can work normally.

[0057] S240, fill the second groove with material to prepare connecting wires in the connecting wire area, and fill the third groove with material to prepare multiple ribbon cable structures in the ribbon cable area. The connecting wires are respectively connected to the temperature sensor and the ribbon cable structures to form a temperature sensor array.

[0058] Optionally, in yet another embodiment, Figure 7 This is a schematic flowchart illustrating another method for fabricating a temperature sensor array according to an embodiment of the present invention. See also... Figure 5 and Figure 7 The preparation method includes:

[0059] S310: A patterned groove structure is formed on one side of the substrate using nanoimprint lithography.

[0060] S320. A first temperature-sensitive line is formed by filling the first groove section with a temperature-sensitive material.

[0061] S330. Fill the second groove portion with a first conductive material to form a first electrode structure and a second electrode structure for a temperature sensor on both sides of the temperature-sensitive structure.

[0062] S340. Fill the third groove portion with a second conductive material to form a first adjustment portion. Multiple first adjustment portions are alternately electrically connected along a first direction to form multiple first adjustment structures. Multiple first adjustment structures are all arranged in parallel with the temperature-sensitive structure, and multiple first adjustment structures are arranged in parallel with each other.

[0063] Specifically, the sensing unit fabrication area BB also includes a first resistance calibration area BB4. The first resistance calibration area BB4 includes multiple first adjustment structures, each comprising multiple first adjustment structure portions. These portions are connected in series to form a "serpentine" trace. All the first adjustment structures are connected in parallel with the temperature-sensitive structure, thereby enabling coarse resistance adjustment. It can be understood that because the multiple first adjustment structure portions are connected in series, the resulting first adjustment structure has a relatively large resistance value; that is, the first resistance calibration area BB4 is a coarse adjustment area, capable of ohmic-level adjustment. For example, as... Figure 5 In the illustrated embodiment, the adjustable resistance values ​​of the multiple first adjusting structures from top to bottom are 50Ω, 20Ω, 10Ω, 5Ω, 2Ω, and 1Ω, respectively. It can be seen that the more series turns of the first adjusting portion in the first adjusting structure, the greater the adjustable resistance value of the first adjusting structure; or the longer the extension length of the first adjusting portion in the first adjusting structure, the greater the adjustable resistance value of the first adjusting structure. That is, the number of series turns or the extension length of the first adjusting portion are directly proportional to the adjustable resistance value of the corresponding first adjusting structure. When resistance adjustment is required, the connection between the first adjusting structure and the temperature-sensitive structure can be disconnected. For example, the first adjusting structure includes a first end and a second end electrically connected to the temperature-sensitive structure. By disconnecting the first end and the second end, the resistance value corresponding to the first adjusting structure is added to the temperature-sensitive structure, thereby achieving coarse adjustment of the resistance value of the temperature sensor 20.

[0064] S350. Fill the fourth groove section with a second conductive material to prepare a second adjustment section. Multiple second adjustment sections are arranged in parallel to form multiple second adjustment structures. The second adjustment structures are arranged in series with the temperature-sensitive structure.

[0065] Specifically, the sensing unit fabrication area BB also includes a second resistance calibration area BB5. The first resistance calibration area BB5 includes multiple second adjustment structures, each comprising multiple second adjustment structure portions. These portions are connected in parallel to form a "vertical grid" trace. The multiple second adjustment structures are connected in series with the temperature-sensitive structure, thereby enabling fine resistance adjustment. It can be understood that because the multiple second adjustment structure portions are connected in parallel, the resulting second adjustment structure has a relatively small resistance value; that is, the second resistance calibration area BB5 is a fine-tuning area, capable of achieving adjustments in the 0.1Ω-0.01Ω range. For example, as... Figure 5 In the illustrated embodiment, the adjustment resistance values ​​of the multiple second adjustment structures are 0.5Ω, 0.2Ω, 0.1Ω, 0.05Ω, 0.02Ω, and 0.01Ω, respectively. It can be seen that the more parallel turns (the denser the connection) of the second adjustment section in the second adjustment structure, the smaller the adjustment resistance value of the second adjustment structure; that is, the number of parallel turns of the second adjustment section is inversely proportional to the adjustment resistance value of the corresponding second adjustment structure. When resistance adjustment is required, one of the second adjustment sections in the second adjustment structure can be cut off, thereby adding the resistance value corresponding to the second adjustment structure to the temperature-sensitive structure, achieving fine adjustment of the resistance value of the temperature sensor 20. Thus, in this embodiment of the invention, the first calibration region BB4 and the second calibration group BB5 are both integrally formed in the temperature sensor 20, enabling step-by-step, highly efficient, and precise correction of the initial resistance of the temperature sensor 20.

[0066] It should be noted that in temperature sensor rating standards, such as AA level, for a platinum resistance thermometer (Pt100), the 0℃ resistance needs to be between 99.96149 and 100.03851 Ω, while for A level it is between 99.942235 and 100.057765 Ω. If the initial resistance is 1000 Ω, the 0℃ resistance needs to be between 999.6149 and 1000.3851 Ω, while for A level it is between 999.42235 and 1000.57765 Ω. This embodiment of the invention, through the above coarse and fine resistance adjustments, enables the final product to meet the AA level accuracy standard.

[0067] It should also be noted that the area of ​​the temperature sensor 20 is S1, which satisfies: S1 ≤ 5 mm × 5 mm; preferably, S1 ≤ 2 mm × 2 mm. The thickness of the temperature sensor is D3, which satisfies: D3 < 10 μm. The temperature sensor 20 includes the aforementioned temperature-sensitive region BB2, the first electrode structure fabrication region BB2, the second electrode structure fabrication region BB3, the first calibration region BB4, and the second calibration region BB5. This further ensures the miniaturization of the temperature sensor 20 and improves the integration density of the temperature sensor array.

[0068] S360, fill the second groove with material to prepare connecting wires in the connecting wire area, and fill the third groove with material to prepare multiple ribbon cable structures in the ribbon cable area. The connecting wires are respectively connected to the temperature sensor and the ribbon cable structures to form a temperature sensor array.

[0069] In summary, the embodiments of this invention employ nanoimprint lithography to form micron-scale patterned groove structures, resulting in small linewidths and minimal linewidth deviations, achieving highly consistent fabrication. Furthermore, the high line density and integrated fabrication of connecting lines, temperature sensors, and cabling structures enable high-density layout. Moreover, by setting a first and a second resistance calibration region on the temperature sensor, and through coarse resistance adjustment in the first region and fine resistance adjustment in the second region, resistance adjustment within the range of 0.01~100 Ω can be achieved, thereby enabling the final product to meet AA-level accuracy standards.

[0070] Based on the same inventive concept, this embodiment of the invention also provides a temperature sensor array, which is prepared by the above-described method for preparing a temperature sensor array. Therefore, the temperature sensor array has the same beneficial effects as described above, and will not be described in detail here.

[0071] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A method for fabricating a temperature sensor array, characterized in that, The preparation method includes: Provide substrate; A patterned groove structure is formed on one side of the substrate using nanoimprint lithography. The patterned groove structure includes a ribbon cable area, multiple sensing unit fabrication areas, and multiple connecting line areas. The sensing unit fabrication areas include multiple first grooves, the connecting line areas include multiple second grooves, and the ribbon cable areas include multiple third grooves. Material is filled into the first groove to form a temperature sensor in the sensing unit fabrication area; Material is filled into the second groove to prepare a connecting wire in the connecting wire area; Material is filled into the third groove to prepare multiple ribbon cable structures in the ribbon cable area. The connecting lines are respectively connected to the temperature sensor and the ribbon cable structures to form the temperature sensor array.

2. The preparation method according to claim 1, characterized in that, The sensing unit fabrication area includes a temperature-sensitive area, which includes a plurality of first groove portions. The plurality of first groove portions extend along a first direction and are alternately connected along a second direction, wherein the first direction intersects the second direction. Filling the first groove with material to form a temperature sensor in the sensing unit fabrication area includes: A first temperature-sensitive wire is formed by filling the first groove portion with a temperature-sensitive material, and multiple first temperature-sensitive wires are alternately electrically connected along the second direction to form a temperature-sensitive structure.

3. The preparation method according to claim 2, characterized in that, The sensing unit fabrication area also includes a first electrode fabrication area and a second electrode fabrication area, which are located on both sides of the temperature-sensitive area. Both the first electrode fabrication area and the second electrode fabrication area include multiple second groove portions. After filling the first groove with material to form a temperature sensor in the sensing unit fabrication area, the process further includes: A first conductive material is filled into the second groove portion to form a first electrode structure and a second electrode structure of the temperature sensor on both sides of the temperature-sensitive structure, and the temperature-sensitive structure is electrically connected to the first electrode structure and the second electrode structure, respectively.

4. The preparation method according to claim 2, characterized in that, The sensing unit fabrication area further includes a first resistance calibration area, which includes multiple third groove portions; After filling the first groove portion with a temperature-sensitive material to form the first temperature-sensitive line, the process further includes: The third groove is filled with a second conductive material to form a first adjustment portion. A plurality of the first adjustment portions are alternately electrically connected along the first direction to form a plurality of first adjustment structures. The plurality of first adjustment structures are all arranged in parallel with the temperature-sensitive structure, and the plurality of first adjustment structures are arranged in parallel with each other. The number of series turns of the first adjustment portion or the extension length of the first adjustment portion is proportional to the adjustment resistance value of the corresponding first adjustment structure.

5. The preparation method according to claim 2, characterized in that, The sensing unit fabrication area further includes a second resistance calibration area, which includes multiple fourth groove portions. After filling the first groove portion with a temperature-sensitive material to form the first temperature-sensitive line, the process further includes: The fourth groove is filled with a second conductive material to prepare a second adjustment section. Multiple second adjustment sections are connected in parallel to form multiple second adjustment structures. The second adjustment structure is connected in series with the temperature-sensitive structure. The number of parallel turns of the second adjustment section is inversely proportional to the adjustment resistance value of the corresponding second adjustment structure.

6. The preparation method according to claim 2, characterized in that, The process of filling the first groove portion with a temperature-sensitive material to form a first temperature-sensitive line includes: The first sub-layer is prepared in the first groove section by a scraping method; The second and third sublayers are prepared by electroplating on the side of the first sublayer away from the substrate.

7. The preparation method according to claim 6, characterized in that, The material of the first sublayer includes at least one of conductive metal nanoparticles, nanowire materials, bulk metals, carbon powder, conductive polymers, carbon nanotubes, graphene, or MXene. The materials of the second and third sublayers include one of silver, copper, nickel, platinum, or gold.

8. The preparation method according to claim 2, characterized in that, The depth of the first groove segment is D1, and D1 satisfies: 1μm≤D1≤50μm; The width of the first groove segment is L1, and L1 satisfies: 1μm≤L1≤50μm; The distance between two adjacent first groove segments is D2, and D2 satisfies: D2≥1μm.

9. The preparation method according to claim 1, characterized in that, The area of ​​the temperature sensor is S1, and S1 satisfies: S1≤5 mm×5 mm; The thickness of the temperature sensor is D3, and D3 satisfies the following condition: D3 < 10 μm.

10. A temperature sensor array, characterized in that, It is prepared by any of the preparation methods described in claims 1-9.

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