Supercritical substrate cleaning apparatus and supercritical substrate cleaning method using same

Abstract

An embodiment of the present invention provides a supercritical substrate cleaning apparatus, comprising: a chamber part in which an accommodation space is formed; and a block part which is provided in the accommodation space, has a pair of upper block and lower block separated from each other, and supports a substrate disposed between the upper block and the lower block. A first fluid supplied to the accommodation space through a first fluid supply port connected to the chamber portion is discharged through a first fluid discharge port connected to the chamber portion in a state of surrounding the block portion along a first fluid movement path. And a second fluid supplied to the substrate through the block portion moves along a second fluid movement path so as to surround the substrate and dry-cleans the substrate, and the first fluid and the second fluid are fluids containing supercritical carbon dioxide.

Description

Technical Field

[0001] The present invention relates to a supercritical substrate cleaning apparatus and a supercritical substrate cleaning method thereof, and more specifically, to a supercritical substrate cleaning apparatus formed in a manner to prevent substrate contamination and a supercritical substrate cleaning method thereof. Background Technology

[0002] Semiconductor manufacturing processes include photolithography, etching, ion implantation, and other processes. After each process is completed and before the next process is executed, a cleaning and drying process is performed to remove impurities remaining on the substrate surface.

[0003] Typically, isopropanol (IPA) is used instead of deionized water in the substrate drying process. However, when drying the substrate with isopropanol, the surface tension of liquid isopropanol can cause a leaching phenomenon, where patterns formed on the substrate become adhered to each other or tilt. Specifically, patterns with deep, narrow aspect ratios can tilt during the substrate drying process. Therefore, to prevent pattern tilting, a substrate cleaning method using supercritical fluids has been proposed.

[0004] However, using supercritical fluids causes other problems besides pattern tilting. For example, when supercritical carbon dioxide is supplied to the chamber at atmospheric pressure, the temperature drops sharply due to adiabatic expansion, and during this process, the supercritical carbon dioxide undergoes a phase change, causing particulate contamination on the substrate. Moreover, when supercritical carbon dioxide is supplied to the chamber instantaneously, the high differential pressure causes particles from the piping to be ejected into the chamber, contaminating the substrate.

[0005] Furthermore, during the substrate drying process, rapid substitution of isopropanol and supercritical carbon dioxide is required. However, existing substrate cleaning devices suffer from stagnation zones due to the complex fluid channels within the chamber, resulting in slower supercritical carbon dioxide substitution. This slower substitution can lead to reduced productivity.

[0006] Furthermore, in the case of etching the substrate, for example, an etching solution can be pre-coated onto the upper part of the substrate and replaced with supercritical carbon dioxide for etching and cleaning. Alternatively, an etching solution dissolved in supercritical carbon dioxide can be sprayed onto the substrate within the chamber for etching and cleaning. However, existing substrate cleaning apparatuses lack additional protective mechanisms for the inner walls of the chamber. Therefore, during the etching and cleaning process, the etching solution adheres to the inner walls of the chamber, potentially causing damage to the chamber's inner walls.

[0007] Therefore, it is necessary to conduct various research and developments on supercritical substrate cleaning devices that prevent substrate contamination and protect the inner walls of the chamber. Summary of the Invention

[0008] Technical issues The technical problem of the present invention, which aims to solve the problems described above, is to provide a supercritical substrate cleaning apparatus formed in a manner that prevents substrate contamination and a supercritical substrate cleaning method utilizing the same.

[0009] Solution to the problem To address the aforementioned technical problem, one embodiment of the present invention provides a supercritical substrate cleaning apparatus, comprising: a chamber portion forming a receiving space within it; and a block portion disposed in the receiving space, having a pair of spaced-apart upper and lower blocks, and supporting a substrate disposed between the upper and lower blocks. A first fluid supplied to the receiving space through a first fluid supply port connected to the chamber portion moves along a first fluid movement path to surround the block portion and is discharged through a first fluid outlet connected to the chamber portion. A second fluid supplied to the substrate through the block portion moves along a second fluid movement path to surround the substrate, thereby drying and cleaning the substrate. The first and second fluids are fluids containing supercritical carbon dioxide.

[0010] In one embodiment of the present invention, a second fluid can be supplied to the upper surface of the center of the substrate through a second fluid supply port connected to the center of the upper block. After the second fluid supplied to the center of the upper surface of the substrate moves toward the edge of the substrate, it is guided along the lower surface of the substrate toward the center of the substrate, and then discharged to the outside through a second fluid discharge port connected to the center of the lower block.

[0011] In one embodiment of the present invention, the pressure of the first fluid moving along the first fluid movement path may be greater than the pressure of the second fluid moving along the second fluid movement path.

[0012] In one embodiment of the present invention, the second fluid moving along the second fluid movement path can dry and clean the substrate in a pulse pattern of repeated pressure rise and fall, and a heater is built into the block portion.

[0013] In one embodiment of the present invention, a central block may be provided between the upper block and the lower block within the chamber portion.

[0014] In one embodiment of the present invention, the substrate is supported on a substrate support portion provided on the block portion, and the edge of the substrate supported on the substrate support portion can be disposed on the inner side from the outer end of the block portion at a predetermined interval.

[0015] In another embodiment of the present invention, the chamber portion may include: a lower chamber on which the block portion is disposed at an upper part; and an upper chamber that moves up and down and surrounds the block portion and the lower chamber. A fixing groove is formed on the peripheral surface of the inner side of the upper chamber, and a movable fixing part is provided on the lower surface of the lower chamber that is selectively inserted into the fixing groove, so that when the lower chamber and the upper chamber are combined, the movable fixing part is inserted into the fixing groove.

[0016] In another embodiment of the present invention, the inner side of the upper chamber can be formed by connecting a first sealing part and a second sealing part. The first sealing part surrounds the block portion, and the second sealing part forms a stepped surface with the first sealing part and surrounds the lower chamber. A sealing member is inserted into a sealing insertion groove formed on the edge of the upper surface of the lower chamber. When the upper chamber and the lower chamber are combined, the sealing member is pressurized by the stepped surface and seals the receiving space.

[0017] An embodiment of the present invention provides a supercritical substrate cleaning method, comprising: a supercritical atmosphere creation step, wherein a first fluid supplied to a chamber through a first fluid supply port moves along a first fluid movement path and is discharged to a first fluid outlet; and a substrate drying and cleaning step, wherein a second fluid supplied to a block disposed in the chamber through a second fluid supply port moves along a second fluid movement path and is discharged to a second fluid outlet after drying and cleaning the substrate, wherein in the supercritical atmosphere creation step, the first fluid surrounds and moves the block, and in the substrate drying step, the second fluid surrounds and moves the substrate.

[0018] The effects of the invention The effects of the supercritical substrate cleaning apparatus and the supercritical substrate cleaning method using the present invention described above are explained below: According to the present invention, a first fluid moves along a first fluid movement path, and a second fluid for drying the substrate moves along a second fluid movement path. During the substrate drying process, the second fluid is supplied to the substrate and dries it while the interior of the chamber is pre-created with the desired supercritical atmosphere by the first fluid, which is formed from supercritical carbon dioxide. This supercritical substrate cleaning apparatus has a structure that rapidly replaces isopropanol coated on the substrate with supercritical carbon dioxide as the second fluid, thereby preventing pattern tilting and substrate contamination during the substrate cleaning process.

[0019] Furthermore, since the substrate is dried by the second fluid while the first fluid creates the required supercritical atmosphere inside the chamber, adiabatic expansion is prevented during the supply of the second fluid. Therefore, the existing problem of substrate contamination due to adiabatic expansion can be prevented during the supply of supercritical carbon dioxide to the interior of the chamber.

[0020] Furthermore, since the first fluid moves along the first fluid movement path to surround the entire block portion, and the second fluid moves along the second fluid movement path to surround the entire substrate, residual cleaning solution on the substrate is prevented from adhering to the inner wall of the chamber portion during the substrate cleaning process. Therefore, corrosion of the inner wall of the chamber portion due to the cleaning solution is prevented.

[0021] It should be understood that the effects of the present invention are not limited to those described above, but include all effects that can be inferred from the structure of the invention as described in the specific embodiments or claims. Attached Figure Description

[0022] Figure 1 This is a perspective view of a supercritical substrate cleaning apparatus according to an embodiment of the present invention.

[0023] Figure 2 This is a cross-sectional example view showing the main parts of a supercritical substrate cleaning apparatus according to an embodiment of the present invention.

[0024] Figure 3 This is an example diagram illustrating the movement flow of a first fluid along a first fluid movement path according to an embodiment of the present invention.

[0025] Figure 4 This is an example diagram illustrating the movement flow of a second fluid along a second fluid movement path according to an embodiment of the present invention.

[0026] Figure 5 This is an example diagram illustrating the movement flow of the first fluid and the second fluid during the substrate cleaning process in an embodiment of the present invention.

[0027] Figure 6This is a sequence diagram illustrating a supercritical substrate cleaning method according to an embodiment of the present invention.

[0028] Figure 7 This is a perspective view of a supercritical substrate cleaning apparatus according to another embodiment of the present invention.

[0029] Figure 8 A partially cut perspective view illustrating the state of the upper and lower chambers after separation according to another embodiment of the present invention.

[0030] Figure 9 A partially cut perspective view illustrating the combined state of the upper and lower chambers according to another embodiment of the present invention.

[0031] Figures 10a to 10f The following diagram illustrates the step-by-step process of joining and separating the upper and lower chambers of another embodiment of the present invention. Detailed Implementation

[0032] The present invention will now be described with reference to the accompanying drawings. However, the present invention can be embodied in many different forms, and is therefore not limited to the embodiments described herein. Furthermore, parts unrelated to the description have been omitted for the purpose of clearly illustrating the present invention, and similar reference numerals are used for similar parts throughout this specification.

[0033] Throughout the specification, when it is stated that one part is "connected" to another part, this includes not only "direct connection" but also "indirect connection" with other components in between. Furthermore, when it is stated that a part "comprises" a structural element, unless otherwise stated, it implies that other structural elements may also be included, and does not exclude other structural elements.

[0034] In this invention, "upper" and "lower" mean located above or below the object component, and do not necessarily mean that they must be located above or below the object component in accordance with the direction of gravity.

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0036] Figure 1 This is a perspective view of a supercritical substrate cleaning apparatus according to an embodiment of the present invention. Figure 2 This is a cross-sectional example view showing the main parts of a supercritical substrate cleaning apparatus according to an embodiment of the present invention. Figure 3 This is an example diagram illustrating the movement flow of a first fluid along a first fluid movement path according to an embodiment of the present invention. Figure 4 This is an example diagram illustrating the movement flow of a second fluid along a second fluid movement path according to an embodiment of the present invention. Figure 5 This is an example diagram illustrating the movement flow of the first fluid and the second fluid during the substrate cleaning process in an embodiment of the present invention.

[0037] like Figures 1 to 5 As shown, the supercritical substrate cleaning apparatus 1000 may include a chamber section 100 and a block section 200.

[0038] The chamber section 100 forms the overall shape of the supercritical substrate cleaning apparatus 1000.

[0039] This chamber 100 may include an upper chamber 110 and a lower chamber 120. The upper chamber 110 and the lower chamber 120 form a receiving space 101 in which a block portion 200 is disposed.

[0040] The upper chamber 110 and the lower chamber 120 are formed in a separable manner. For example, the upper chamber 110 can move upward from the lower chamber 120 and can be separated. The upper chamber 110 and the lower chamber 120 can be separated in a drawer-like manner. In this way, the separation and connection of the upper chamber 110 and the lower chamber 120 are not limited to a specific method and can be achieved in various forms.

[0041] In this invention, the upper chamber 110 is described as moving up and down from the lower chamber 120 as an example.

[0042] A sealing portion 130 is provided between the upper chamber 110 and the lower chamber 120. When the upper chamber 110 and the lower chamber 120 are combined, the sealing portion 130 seals the interior of the chamber portion 100.

[0043] This sealing portion 130 is provided in the receiving space 101, and is located at a lower position than the block portion 200 that supports the substrate W. This is to prevent particles remaining in and around the sealing portion 130 from adhering to the substrate W during the process of opening the chamber portion 100, for example, after the drying process of the substrate W is completed.

[0044] Therefore, with the virtual horizontal line as a reference, the sealing part 130 is located lower than the block part 200. Thus, even if particles are generated from the sealing part 130, the particles can be prevented from falling due to gravity and flowing into the substrate W.

[0045] The upper chamber 110 is connected to a first fluid supply port 111, and the lower chamber 120 is connected to a first fluid discharge port 121. At this time, the first fluid supply port 111 is connected to the central side of the upper chamber 110, and the first fluid discharge port 121 is connected to the central side of the lower chamber 120.

[0046] In this way, the first fluid supplied into the chamber portion 100 through the first fluid supply port 111 can be discharged through the first fluid discharge port 121 while surrounding the entire block portion 200. The first fluid can be, for example, a fluid containing supercritical carbon dioxide.

[0047] In other words, the first fluid supplied into the chamber 100 moves along the first fluid movement path and is discharged to the first fluid outlet 121. Since the first fluid is supplied from the first fluid supply port 111 and the first fluid is drawn in at the first fluid outlet 121, the first fluid can move along the first fluid movement path in a manner that surrounds the entire block 200.

[0048] Specifically, the first fluid supplied to the chamber portion 100 through the first fluid supply port 111 is discharged to the central side of the upper surface of the upper block 210, and the first fluid discharged to the central side of the upper surface of the upper block 210 moves along the upper surface of the upper block 210 to the edge of the upper block 210.

[0049] Furthermore, the first fluid that moves towards the edge of the upper block 210 moves towards the first fluid outlet 121 located in the center of the lower chamber 120 and is discharged while being pulled downward by the suction of the first fluid outlet 121.

[0050] During the cleaning process of the substrate W, this first fluid creates a supercritical atmosphere inside the chamber 100. By creating a supercritical atmosphere inside the chamber 100 using this first fluid, supercritical carbon dioxide can be directly supplied to the substrate W without the need for additional pretreatment processes, thus preventing contamination of the substrate W due to the adiabatic expansion of supercritical carbon dioxide.

[0051] In this way, by supplying a first fluid into the chamber 100 to create a supercritical atmosphere, the block 200 supplies a second fluid to the substrate W to achieve the cleaning operation of the substrate W.

[0052] On the other hand, block 200 may include upper block 210 and lower block 220.

[0053] The upper block 210 and the lower block 220 form a pair and are arranged apart by a predetermined interval. In the case where a single block portion 200 for supporting one substrate W is provided within the chamber portion 100, only the upper block 210 and the lower block 220 are provided. In this invention, an example will be described where, in addition to the upper block 210 and the lower block 220, a central block 230 is also provided to support multiple substrates W. For example, the central block 230, disposed between the upper block 210 and the lower block 220, functions as the lower block 220 for the upper block 210 and as the upper block 210 for the lower block 220.

[0054] One or more of the upper block 210, lower block 220, and central block 230 may have substrate support portions 201 formed at predetermined intervals along the periphery of the block to support the substrate W. In this invention, although the example of having substrate support portions 201 on the upper part of the lower block 220 and the central block 230 is described, the arrangement and form of the substrate support portions 201 can be formed in various ways. For example, the substrate support portions 201 may be provided on the lower part of the upper block 210 to support the substrate W.

[0055] The substrate support portion 201 is provided on the inner side from the outer end of the block portion 200 at a predetermined distance. Preferably, the distance D between the edge of the substrate W supported by the substrate support portion 201 and the outer end of the block portion 200 is, for example, 5 to 50 mm. More preferably, the distance D between the edge of the substrate W and the outer end of the block portion 200 is 10 to 30 mm.

[0056] In this way, the separation distance D is formed between the edge of the substrate W and the outer end of the block portion 200 in order to prevent the second fluid from deviating from the movement path of the first fluid during the drying and cleaning process of the substrate W.

[0057] A second fluid supply port 211 is connected to the upper block 210 and the central block 230. Furthermore, a second fluid discharge port 221 is connected to the lower block 220 and the central block 230. In this way, the second fluid supplied from the second fluid supply port 211 can surround the entire substrate W, and after the substrate W has been dried, it is discharged to the second fluid discharge port 221. The second fluid used for drying and cleaning the substrate W can be, for example, a fluid containing supercritical carbon dioxide.

[0058] Specifically, the second fluid supplied into the block portion 200 through the second fluid supply port 211 is discharged towards the center of the upper surface of the substrate W. The second fluid discharged towards the center of the upper surface of the substrate W moves along the edge of the upper surface of the substrate W. In this way, the second fluid moving towards the edge of the substrate W can be guided towards the lower surface of the substrate W by the suction of the second fluid discharge port 221. The second fluid moving along the center of the lower surface of the substrate W can be discharged through the second fluid discharge port 221, which is connected to the center of the lower block 220 and the central block 230. That is, as... Figure 4 As shown, the second fluid surrounds the entire substrate W as it moves along the second fluid movement path, replacing the isopropanol present on the substrate W and achieving the drying and cleaning operation of the substrate W.

[0059] A heater (not shown) may also be provided inside this block portion 200. This heater heats the block portion 200 at a predetermined temperature and prevents the temperature of the second fluid from dropping sharply during the initial supply of the second fluid into the block portion 200. Therefore, adiabatic expansion of the second fluid supplied into the block portion 200 can be prevented.

[0060] Furthermore, the second fluid supplied and discharged through the second fluid supply port 211 and the second fluid discharge port 221 can be provided to the substrate W in a pattern of repeated pressure increases and decreases. In this way, by repeatedly increasing and decreasing the pressure of the second fluid in a pulse pattern and supplying the second fluid, the substitution of isopropanol and supercritical carbon dioxide can be achieved more rapidly. Therefore, the drying and cleaning operation of the substrate W can be achieved more effectively.

[0061] In this invention, although the example described is of a block portion 200 supporting two substrates W within a chamber portion 100, the block portion 200 disposed within the chamber portion 100 can be formed as a single unit consisting of a pair of upper blocks 210 and lower blocks 220 supporting one substrate W, or it can be provided to support three or more substrates W. Thus, the number of blocks disposed within the chamber portion 100 is not limited to a specific number. When multiple blocks are disposed within the chamber portion 100, as shown in this invention, the block portion 200 can be configured as a multi-layer structure. In this way, when multiple block portions 200 are disposed within the chamber portion 100, multiple substrates W can be dried and cleaned simultaneously, thereby further improving the productivity of the cleaned substrates W.

[0062] On the other hand, the pressure of the first fluid moving along the first fluid movement path is greater than the pressure of the second fluid moving along the second fluid movement path. In this way, when the pressure of the first fluid is greater than the pressure of the second fluid, it is possible to prevent the second fluid used for drying and cleaning the substrate W from detaching from the external first fluid movement path. Therefore, it is prevented that the fluid used for drying and cleaning the substrate W via the second fluid adheres to the inner wall of the chamber portion 100. Thus, it is possible to prevent damage to the inner wall of the chamber portion 100 caused by the fluid used for drying and cleaning the substrate W adhering to the inner wall of the chamber portion 100, as was previously possible.

[0063] Figure 6 This is a sequence diagram illustrating a supercritical substrate cleaning method according to an embodiment of the present invention.

[0064] pass Figure 6 The supercritical substrate cleaning method can be roughly observed as follows: First, a first fluid is supplied into the chamber 100 through the first fluid supply port 111. This first fluid supplied into the chamber 100 moves along the first fluid movement path and is discharged into the first fluid discharge port 121. This first fluid moves in a manner that surrounds the entire block 200, creating a supercritical atmosphere inside the chamber 100 (step S100).

[0065] Furthermore, a second fluid is supplied to the block portion 200 disposed within the chamber portion 100 through the second fluid supply port 211. In this manner, the second fluid supplied to the block portion 200 moves along a second fluid movement path and is discharged to the second fluid discharge port 221. During this process, the second fluid moves in a manner that surrounds the entire substrate W and replaces the isopropanol on the substrate W, thereby drying and cleaning the substrate W (step S200).

[0066] Finally, after the drying and cleaning of the substrate W is completed, the interior of the supercritical chamber 100 is converted to atmospheric pressure.

[0067] In this way, since the supercritical substrate cleaning apparatus 1000 simultaneously supplies the first fluid and the second fluid to the interior of the chamber portion 100 and the block portion 200, it can prevent the substrate W from tilting and becoming contaminated, and can prevent damage to the inner wall of the chamber portion 100.

[0068] Figure 7 This is a perspective view of a supercritical substrate cleaning apparatus according to another embodiment of the present invention. Figure 8 This is a partially cut perspective view illustrating the state of the upper and lower chambers after separation according to another embodiment of the present invention. Figure 9 This is a partially cut perspective view illustrating the combined state of the upper and lower chambers according to another embodiment of the present invention. Figures 10a to 10f This diagram illustrates, step-by-step, the joining and separating process of the upper and lower chambers according to another embodiment of the present invention. Figures 10a to 10c This is an example diagram illustrating the combined state of the upper chamber 110' and the lower chamber 120' with the substrate W introduced into the block portion 200'. Figures 10d to 10f This is an example diagram showing the separation of the upper chamber 110' and the lower chamber 120' in order to lead out the substrate W for cleaning operations from the block portion 200'.

[0069] like Figures 7 to 10f As shown, the supercritical substrate cleaning apparatus 2000 of another embodiment has a structural difference from the chamber section 100 of one embodiment.

[0070] In another embodiment, the upper chamber 110' located in the chamber section 100' moves up and down along the chamber moving guide rod 151 by the operation of the cylinder 140.

[0071] The lower end of this chamber movement guide rod 151 can be combined with the first base portion 161 connected to the cylinder 140, and the upper end of the chamber movement guide rod 151 can be combined with the bottom surface of the lower chamber 120'. Multiple chamber movement guide rods 151 can be arranged along the periphery of the first base portion 161 at predetermined intervals. In this invention, an example of four chamber movement guide rods 151 will be described.

[0072] Furthermore, the end of the rod 141 provided in the cylinder 140 can be combined with the center of the second base portion 162, so that the second base portion 162 can move up and down when the cylinder 140 is running.

[0073] The chamber movement guide rod 151, which is connected to the bottom surface of the first base portion 161 and the lower chamber 120', is inserted through the second base portion 162. During the extension and retraction of the rod 141 of the cylinder 140, this second base portion 162 can move along the length direction of the chamber movement guide rod 151.

[0074] Furthermore, the lower end of the upper chamber support rod 152 is connected to the upper surface of the second base portion 162, and the upper end of the upper chamber support rod 152 is connected to the lower surface of the upper chamber 110'. Multiple such upper chamber support rods 152 can be provided along the periphery of the second base portion 162 at predetermined intervals. This example of four upper chamber support rods 152 will also be described.

[0075] During the up-and-down movement of the second base portion 162 by the operation of the cylinder 140, the upper chamber support rod 152 causes the upper chamber 110' to move up and down. Therefore, the upper chamber 110' can be selectively engaged with the lower chamber 120'.

[0076] In this way, when the upper chamber 110' and the lower chamber 120' are combined, the block portion 200' located on the upper part of the lower chamber 120' is located in the receiving space 101' sealed by the upper chamber 110' and the lower chamber 120'.

[0077] The inner side of the upper chamber 110' is formed by the connection of the first sealing part 112 and the second sealing part 114. The first sealing part 112 surrounds the block part 200', and the second sealing part 114 forms a stepped surface 113 with the first sealing part 112 and surrounds the lower chamber 120'.

[0078] Furthermore, a circular sealing insertion groove 122 is formed on the edge of the upper surface of the lower chamber 120'. A sealing member 123 is inserted into this sealing insertion groove 122, and when the upper chamber 110' and the lower chamber 120' are combined, the receiving space 101' within the chamber portion 100' can be sealed. Specifically, as the upper chamber 110' moves towards the lower chamber 120', during the combination of the upper chamber 110' and the lower chamber 120', the stepped surface 113 formed in the upper chamber 110' pressurizes the sealing member 123 and seals the receiving space 101'.

[0079] Furthermore, a movable fixing part 170 is provided on the lower surface of the lower chamber 120', arranged at predetermined intervals along the periphery of the lower chamber 120'. When the upper chamber 110' is combined with the lower chamber 120', this movable fixing part 170 protrudes outward from the lower chamber 120' and is inserted into a fixing groove 115 formed on the peripheral surface inside the second sealing part 114.

[0080] In this way, with the movable fixing part 170 inserted into the fixing groove 115, the upper chamber 110' and the lower chamber 120' can be firmly connected.

[0081] Furthermore, when the substrate W is introduced into or removed from the block portion 200', the upper chamber 110' and the lower chamber 120' need to be separated. In this way, when the upper chamber 110' and the lower chamber 120' need to be separated, the movable fixing part 170 inserted into the fixing groove 115 moves towards the central part of the lower chamber 120', and no jamming occurs during the separation of the upper chamber 110' from the lower chamber 120'.

[0082] This supercritical substrate cleaning apparatus 2000 can have a compact structure, and the upper chamber 110' can be stably moved up and down using only a single cylinder 140. Moreover, with various drive devices for moving the upper chamber 110' arranged on the lower side of the block portion 200', reverse contamination of the substrate W caused by contamination sources generated from the drive devices can be prevented, thereby improving the cleanliness of the supercritical substrate cleaning apparatus 2000.

[0083] However, this is only a preferred embodiment of the present invention, and the scope of protection of the present invention shall not be limited by the scope of this embodiment.

[0084] The above description of the present invention is for illustrative purposes. Those skilled in the art will understand that it can be easily modified into other specific forms without altering the technical concept or essential features of the invention. Therefore, it should be understood that the embodiments described above are illustrative in all respects and are not intended to be limiting. For example, structural elements described in a single form can be implemented separately; similarly, structural elements described separately can also be implemented in a combined form.

[0085] It should be explained that the scope of the present invention should be indicated by the claims, and the meaning and scope of the claims, as well as all changes or modifications derived from their equivalents, are included within the scope of the present invention.

Claims

1. A supercritical substrate cleaning apparatus, characterized in that, include: The chamber section forms a containment space inside; as well as A block portion, disposed in the receiving space, has a pair of spaced-apart upper and lower blocks, and supports a substrate disposed between the upper and lower blocks. The first fluid supplied to the receiving space through the first fluid supply port connected to the chamber portion moves along the first fluid movement path to surround the block portion and is discharged through the first fluid discharge port connected to the chamber portion. The second fluid supplied to the substrate through the block moves along the second fluid movement path in a manner that surrounds the substrate and dries and cleans the substrate. The first fluid and the second fluid are fluids containing supercritical carbon dioxide.

2. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, A second fluid is supplied to the upper surface of the center of the substrate through a second fluid supply port connected to the center of the upper block. The second fluid supplied to the center of the upper surface of the substrate moves toward the edge of the substrate, is guided along the lower surface of the substrate toward the center of the substrate, and is then discharged to the outside through a second fluid outlet connected to the center of the lower block.

3. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, The pressure of the first fluid moving along the first fluid movement path is greater than the pressure of the second fluid moving along the second fluid movement path.

4. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, The second fluid, moving along the second fluid movement path, dries and cleans the substrate in a pulse pattern of repeated pressure increases and decreases. A heater is built into the block.

5. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, Within the chamber, a central block is provided between the upper block and the lower block.

6. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, The substrate is supported on a substrate support portion provided in the block portion. The edge of the substrate supported on the substrate support portion is disposed on the inner side from the outer end of the block portion at a predetermined spacing distance.

7. The supercritical substrate cleaning apparatus according to claim 1, characterized in that, The chamber portion includes: The lower chamber has the block portion disposed at the upper part; and The upper chamber moves up and down, and surrounds the block and the lower chamber. A fixing groove is formed on the inner peripheral surface of the upper chamber, and a movable fixing part is provided on the lower surface of the lower chamber, which is selectively inserted into the fixing groove, so that when the lower chamber and the upper chamber are combined, the movable fixing part is inserted into the fixing groove.

8. The supercritical substrate cleaning apparatus according to claim 7, characterized in that, The inner side of the upper chamber is formed by a first sealing part and a second sealing part connected together. The first sealing part surrounds the block portion, and the second sealing part forms a stepped surface with the first sealing part and surrounds the lower chamber. A sealing element is inserted into a sealing insertion groove formed on the edge of the upper surface of the lower chamber. When the upper chamber and the lower chamber are combined, the sealing element is pressurized by the stepped surface and seals the receiving space.

9. A method for cleaning a supercritical substrate, characterized in that, include: In the supercritical atmosphere creation step, the first fluid supplied into the chamber through the first fluid supply port moves along the first fluid movement path and is discharged to the first fluid outlet. as well as In the substrate drying and cleaning step, a second fluid supplied to the block portion disposed within the chamber portion through the second fluid supply port moves along the second fluid movement path and is discharged into the second fluid outlet after drying and cleaning the substrate. In the supercritical atmosphere creation step, a first fluid surrounds and moves the block portion; in the substrate drying step, a second fluid surrounds and moves the substrate.

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