Method and apparatus for traffic distribution

Abstract

Various embodiments of the present technology may provide a splitter plate having a groove and an inlet aperture in fluid communication with the groove, a flow distribution ring disposed within the groove, where the flow distribution ring has a plurality of apertures, and a top ring disposed over the splitter plate and the flow distribution ring.

Description

Invention Field

[0001] This disclosure generally relates to methods and apparatus for flow distribution. More specifically, this disclosure relates to a flow distribution ring disposed within a partition to provide an air curtain surrounding a base. Background Technology

[0002] Reaction chambers used in semiconductor manufacturing may contain spaces or volumes that need to be purged with inert gases to prevent chemical deposits from forming in those areas. Chemical deposits in these spaces can contaminate the reaction space and / or impair the function of components within the reaction chamber. Summary of the Invention

[0003] Various embodiments of this technology may provide a partition plate having a groove and an inlet orifice in fluid communication with the groove, a flow distribution ring disposed within the groove, wherein the flow distribution ring has a plurality of orifices, and a top ring disposed above the partition plate and the flow distribution ring.

[0004] According to one aspect, an apparatus includes: a partition plate including: a groove; and an inlet orifice in fluid communication with the groove; a flow distribution ring disposed within the groove, wherein the flow distribution ring includes a plurality of orifices; and a top ring disposed above the partition plate and the flow distribution ring.

[0005] In one embodiment, the multiple orifices of the flow distribution ring are vertically oriented and in fluid communication with the grooves.

[0006] In one embodiment, the groove is arranged within the top surface of the partition plate.

[0007] In one embodiment, the groove is annular.

[0008] In one embodiment, the inlet orifice is arranged horizontally and connected to a gas line.

[0009] In one embodiment, the top ring includes a lip that extends radially inward.

[0010] In one embodiment, the lip is separated from the partition by a gap.

[0011] In one embodiment, the partition includes a lip that extends radially inward and overlaps with the outer edge of the support assembly.

[0012] In one embodiment, the partition plate is formed of at least one of aluminum, nickel, stainless steel and titanium; and the flow distribution ring is formed of at least one of aluminum, nickel, stainless steel and titanium.

[0013] In one embodiment, the top ring is formed of at least one of ceramic and quartz.

[0014] According to another aspect, a reactor includes: a lower chamber; a spray head disposed above the lower chamber; a partition plate disposed between the lower chamber and the spray head, wherein the partition plate includes: an annular groove in a top surface of the partition plate; an inlet orifice; and a first lip extending radially inward; a flow distribution ring disposed in the annular groove and including a plurality of holes in fluid communication with the inlet orifice; a support assembly disposed within the reaction chamber, wherein the first lip of the partition plate overlaps with an outer edge of the base support assembly; and a top ring coupled to the top surface of the partition plate.

[0015] In one embodiment, the inlet orifice is arranged horizontally and connected to an inlet port arranged on the outer surface of the reaction chamber.

[0016] In one embodiment, the top ring includes a second lip that extends radially inward.

[0017] In one embodiment, the second lip of the top ring is separated from the partition plate by a first gap.

[0018] In one embodiment, the device further includes a seal disposed between the first lip of the partition plate and the outer edge of the base support assembly.

[0019] In one embodiment, the second lip of the top ring is separated from the base support assembly by a second gap, wherein the second gap is arranged as an annular ring.

[0020] According to another aspect, a system includes: a reactor, comprising: a lower chamber; a spray head disposed above the lower chamber; a partition plate disposed between the lower chamber and the spray head, wherein the partition plate includes: an annular groove in a top surface of the partition plate; an inlet orifice; and a radially inwardly extending first lip; a flow distribution ring disposed in the annular groove and including a plurality of holes in fluid communication with the inlet orifice; a base support assembly disposed within the reaction chamber, wherein the first lip of the partition plate overlaps with an outer edge of the base support assembly; and a top ring coupled to the top surface of the partition plate; a gas line coupled to the inlet orifice, wherein the gas line includes a first pipe section and a second pipe section, wherein the first pipe section and the second pipe section are parallel to each other; and a pressure control device located upstream of the first pipe section and the second pipe section.

[0021] In one embodiment, the system further includes a first valve arranged in a straight line with the first pipe segment and a second valve disposed within the second pipe segment.

[0022] In one embodiment, the gas line is further connected to an inert gas source.

[0023] In one embodiment, the system further includes a controller that communicates with the first valve and the second valve and is configured to operate the first valve and the second valve. Attached Figure Description

[0024] A more complete understanding of the art can be obtained by referring to the detailed description when considered in conjunction with the following illustrative drawings. In the following drawings, the same reference numerals refer to similar elements and steps throughout all the drawings.

[0025] Figure 1 A system according to an embodiment of the present technology is shown in a representative manner;

[0026] Figure 2 This is a cross-sectional view of a reactor according to an embodiment of the present technology;

[0027] Figures 3A to 3C This is a cross-sectional view of a reactor according to an embodiment of the present technology;

[0028] Figure 4 This is a top view of a portion of a reactor according to an embodiment of the present technology;

[0029] Figure 5 A top view of a partition plate according to an embodiment of the present technology; and

[0030] Figure 6 This is a top view of a flow distribution ring according to an embodiment of the present technology. Detailed Implementation

[0031] This technology can be described in terms of functional block components and various processing steps. Such functional blocks can be implemented by any number of components configured to perform specified functions and achieve various results. For example, this technology can employ various gas lines, valves, controllers, reaction chambers, containers, and bases.

[0032] refer to Figure 1 The exemplary system 100 may include a reactor 105 configured to process an object (such as a substrate 225, for example a wafer). Figure 2 The reactor 105 can be configured to perform processes on the object to be processed, such as heating, deposition, etching, polishing, ion implantation, and / or other processes. In some embodiments, the reactor 105 can be configured to perform moving functions, vacuum sealing functions, and venting functions. In some embodiments, the reactor 105 can perform atomic layer deposition (ALD) processes or chemical vapor deposition (CVD) processes.

[0033] In various embodiments, system 100 may also include a container 145 configured to contain chemicals (i.e., precursors). Container 145 may be configured to contain solid or liquid chemicals and may also be configured to convert solids or liquids into vapors. Container 145 may be coupled to reactor 105. For example, system 100 may also include various gas conduits and / or valves (not shown) to allow vapors to flow from container 145 into reactor 105.

[0034] In various embodiments, system 100 may further include an inert gas source 115 configured to contain an inert gas, such as argon. The inert gas source 115 may be fluidly coupled to reactor 105 via any number of gas lines / conduits and / or valves. In an exemplary embodiment, the inert gas source 115 may be coupled to reactor 105 via gas line 120. Gas line 120 may include a first section 125 and a second section 130. The first section 125 may be connected in parallel with the second section 130. The first section 125 may include a first valve 135 aligned with the first section 125. The first section 125 may also include a restrictor 160 disposed upstream of the first valve 135 and configured to restrict the flow rate through the first section 125, the first valve 135, and the main gas line 120 located downstream of the first section 125. Due to the restrictor 160, the first section 125 may have lower flow parameters than the second section 130.

[0035] Similarly, the second pipe segment 130 may include a second valve 140 aligned with the second pipe segment 130. Each of the first valve 135 and the second valve 140 may include a pneumatic valve, a mechanical valve, a piezoelectric valve, etc. In various embodiments, the first valve 135 and the second valve 140 may be operated according to control signals sent from the controller 110. For example, the controller 110 may open / close each of the first valve 135 and the second valve 140 independently of each other.

[0036] In various embodiments, system 100 may also include a pressure controller 150 configured to monitor / sensor the pressure in the main gas line 120 and / or control the pressure in the main gas line 120. The pressure controller 150 may be positioned in a straight line with the main gas line 120 and upstream of the first pipe segment 125 and the second pipe segment 130. The pressure controller 150 may operate according to a desired setpoint. In some embodiments, controller 110 may provide the setpoint to pressure controller 150 via a signal.

[0037] In various embodiments, and referring to Figure 2-6The reactor 105 may include a lower chamber 205 and a spray head 210 disposed above the lower chamber 205. The reactor 105 may also include a partition plate 215 disposed between the lower chamber 205 and the spray head 210. In various embodiments, the partition plate 215 may be formed in an annular shape with an opening 500 in the middle. The partition plate 215 may also include a lip 260 extending radially inward and forming the opening 500. In various embodiments, the partition plate 215 may include an upward-facing top surface 245. The top surface 245 may include a groove 230 having an annular shape. The groove 230 may be disposed radially outward from the lip 260. The partition plate 215 may also include a channel 265 in fluid communication with the groove 230. The partition plate 215 may be formed of aluminum, a nickel alloy, titanium, stainless steel, or a combination thereof.

[0038] In various embodiments, the partition plate may also include an inlet port 235. The inlet port 235 may be arranged horizontally and connected to the gas line 120. The inlet port 235 may be in fluid communication with the channel 265.

[0039] In various embodiments, reactor 105 may further include a flow distribution ring 315 configured to uniformly distribute inert gas around substrate 225. The flow distribution ring 315 may include a plurality of holes 600 extending from the top surface of the flow distribution ring 315 to the bottom surface of the flow distribution ring 315. In various embodiments, the plurality of holes 600 are vertically oriented. The plurality of holes 600 may be in fluid communication with channel 265. In an exemplary embodiment, the flow distribution ring 315 is sized and shaped to be disposed within groove 230. In an exemplary embodiment, the flow distribution ring 315 may have a width W1 in the range of 10 mm to 15 mm. The flow distribution ring 315 may be formed of aluminum, nickel alloy, titanium, stainless steel, or a combination thereof.

[0040] In various embodiments, reactor 105 may further include a top ring 300 configured to guide gas flow laterally through partition plate 215. The top ring 300 may be positioned above partition plate 215 and extend radially inward toward base support assembly 220. The top ring 300 may be attached to partition plate 215, for example, with screws. In various embodiments, the top ring 300 may be arranged to allow gas to flow from channel 265 and into a first gap 310 formed between the top ring 300 and partition plate 215. The first gap 310 may have a height G1 in the range of 1 mm to 5 mm. A second gap 305 may be formed between the inner edge of the top ring 300 and base support assembly 200. The second gap 305 may have a width in the range of 2 mm to 5 mm. The first gap 310 may be in fluid communication with the second gap 305 to allow gas to flow into reaction space 270.

[0041] In various embodiments, system 100 may further include a base support assembly 220 disposed within reactor 105. The base support assembly 220 may include a surface for supporting substrate 225 and a heater (not shown) for heating substrate 225. The heater may be embedded within the base support assembly 220. For loading / unloading substrate 225, the base support assembly 220 may be configured to be vertically movable (up and down) by connection to a drive unit (not shown). In an exemplary embodiment, the base support assembly 220 may also include a protrusion 325 along the outer edge of the base support assembly 220. The protrusion 325 may include an annular channel 340 having a seal 250 disposed within the channel 340. The seal 250 may be a metal seal, such as an e-seal.

[0042] In various embodiments, the spray head 210 may be arranged adjacent to the lower chamber 205. For example, the spray head 210 may be disposed on the side wall of the lower chamber 205. In some embodiments, the spray head 210 may be fastened to the side wall; however, in other cases, the spray head 210 may simply rest on the side wall of the lower chamber 205. In various embodiments, the spray head 210 and the side wall of the lower chamber 205 together form an enclosed space, including the reaction space 270.

[0043] In various embodiments, the spray head 210 may include an inlet gas collection chamber 275 configured to receive gas from an inert gas source 115. For example, the inlet gas collection chamber 275 may be connected to the inert gas source 115 via a main gas line 120. The inlet gas collection chamber 275 may be in fluid communication with the reaction space 270 via a plurality of through-holes in the spray head 210.

[0044] During operation, and referring to Figure 1-6 System 100 can provide a flow pattern 350 to prevent chemical deposition in undesirable areas of reactor 105. For example, gas can flow from inert gas source 115 through main gas line 120 and into reactor 105. Specifically, gas can flow into inlet orifice 235 of partition plate 215, through channel 265, and then through multiple orifices 600 in flow distribution ring 315. Gas can exit the multiple orifices 600 and continue flowing through first gap G1 and second gap G2 and into reaction space 270. Flow pattern 350 can provide a continuous gas curtain around base support assembly 220 and substrate 225. Flow pattern 350 prevents deposition in the cavity between partition plate 215 and base support assembly 220. Flow pattern 350 also prevents deposition on seal 250 and / or within channel 340.

[0045] In operation, controller 110 can control the operation of first valve 135 and second valve 140 to provide the desired flow rate into reactor 105. For example, and regarding the ALD (Atomic Layer Deposition) process, during the pulse (dosing) step, controller 110 can open second valve 140 and close first valve 135, thereby allowing gas to flow through second section 130, which has a higher flow rate than first section 125. Additionally, during the purge step, controller 110 can close second valve 140 and open first valve 135, thereby allowing gas to flow through first section 125, which has a lower flow rate than second section 130. Providing a low flow rate during the purge step prevents turbulence at the edges of substrate 225. Providing a low flow rate during the purge step also allows precursors to be discharged from reaction space 270. Providing a high flow rate during the pulse step provides additional inert gas flow rate around the substrate (outside the periphery of the wafer and reaction space 270) and creates a higher pressure zone that reduces effluent from the reaction space 270. This higher pressure zone generated by the inert gas flow rate reduces precursor effluent, which can increase precursor utilization and reduce precursor consumption / waste. It should be noted that alternative high and low flow rates can be utilized in other processes or during the ALD process.

[0046] In the foregoing description, the technology has been described with reference to specific exemplary embodiments. The specific embodiments shown and described are illustrative of the technology and its best mode, and are not intended to limit the scope of the technology in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the method and system may not be described in detail. Furthermore, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. In actual systems, many alternative or additional functional relationships or physical connections may exist.

[0047] The technology has been described with reference to specific exemplary embodiments. However, various modifications and changes can be made without departing from the scope of the technology. The specification and drawings are to be considered illustrative rather than restrictive, and all such modifications are intended to be included within the scope of the technology. Therefore, the scope of the technology should be determined by the general embodiments described and their legal equivalents, and not merely by the specific examples described above. For example, the steps described in any method or process embodiment may be performed in any order unless otherwise expressly specified, and are not limited to the explicit order presented in the specific examples. Furthermore, the components and / or elements described in any apparatus embodiment may be assembled or otherwise operably configured in various arrangements to produce substantially the same results as the technology, and are therefore not limited to the specific configuration described in the specific examples.

[0048] The benefits, other advantages, and solutions to problems have been described above with reference to specific embodiments. However, any benefit, advantage, solution to a problem, or any element that may lead to or make more significant any particular benefit, advantage, or solution should not be construed as a critical, essential, or necessary feature or component.

[0049] The terms “comprising,” “including,” or any variation thereof are intended to refer to a non-exclusive inclusion, such that a process, method, article, composition, or apparatus that comprises a list of elements may include not only those elements listed but also other elements not expressly listed or inherent to such process, method, article, composition, or apparatus. Except for those not specifically described, other combinations and / or modifications of the above-described structures, arrangements, applications, proportions, elements, materials, or components used in the practice of this art may be altered or otherwise specifically adapted to particular environments, manufacturing specifications, design parameters, or other operational requirements without departing from its general principles.

[0050] The present technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the present technology. These and other changes or modifications are intended to be included within the scope of the present technology, as set forth in the following claims.

Claims

1. An apparatus comprising: The partition includes: Groove; and An inlet orifice in fluid communication with the groove; A flow distribution ring disposed within a groove, wherein the flow distribution ring includes a plurality of holes; and The top ring is positioned above the separator and flow distribution ring.

2. The device according to claim 1, wherein, The multiple holes of the flow distribution ring are vertically oriented and in fluid communication with the groove.

3. The device according to claim 1, wherein, The groove is arranged within the top surface of the partition plate.

4. The device according to claim 1, wherein, The groove is annular.

5. The device according to claim 1, wherein, The inlet hole is arranged horizontally and connected to the gas pipeline.

6. The device according to claim 1, wherein, The top ring includes a lip that extends radially inward.

7. The device according to claim 6, wherein, The lip is separated from the partition by a gap.

8. The device according to claim 1, wherein, The partition includes a lip that extends radially inward and overlaps with the outer edge of the support assembly.

9. The device according to claim 1, wherein: The partition plate is formed of at least one of aluminum, nickel, stainless steel, and titanium; and The flow distribution ring is formed of at least one of aluminum, nickel, stainless steel and titanium.

10. The device according to claim 1, wherein, The top ring is formed of at least one of ceramic and quartz.

11. A reactor, comprising: Lower room; The sprinkler head is located above the lower chamber; A partition plate, disposed between the lower chamber and the spray head, comprises: An annular groove within the top surface of the partition plate; Inlet hole; and A first lip extending radially inward; A flow distribution ring is disposed within an annular groove and includes a plurality of holes in fluid communication with an inlet orifice; A support assembly disposed within the reaction chamber, wherein the first lip of the partition plate overlaps with the outer edge of the base support assembly; and The top ring is connected to the top surface of the partition plate.

12. The reactor according to claim 11, wherein, The inlet hole is arranged horizontally and connected to an inlet port arranged on the outer surface of the reaction chamber.

13. The reactor according to claim 11, wherein, The top ring includes a second lip that extends radially inward.

14. The reactor according to claim 11, wherein, The second lip of the top ring is separated from the partition plate through a first gap.

15. The reactor of claim 11, further comprising a seal disposed between the first lip of the partition plate and the outer edge of the base support assembly.

16. The reactor according to claim 11, wherein, The second lip of the top ring is separated from the base support assembly by a second gap, wherein the second gap is arranged as an annular ring.

17. A system comprising: The reactor includes: The lower room; The sprinkler head is located above the lower chamber; A partition plate, disposed between the lower chamber and the spray head, comprises: An annular groove within the top surface of the partition plate; Inlet hole; and A first lip extending radially inward; A flow distribution ring is disposed within an annular groove and includes a plurality of holes in fluid communication with an inlet orifice; A base support assembly, disposed within the reaction chamber, wherein the first lip of the partition plate overlaps with the outer edge of the base support assembly; and Top ring, which is connected to the top surface of the partition plate; A gas pipeline connected to an inlet port, wherein the gas pipeline includes a first section and a second section, wherein the first section and the second section are parallel to each other; and The pressure control device is located upstream of the first and second pipe sections.

18. The system of claim 17 further includes a first valve arranged in a straight line with the first pipe segment and a second valve disposed within the second pipe segment.

19. The system according to claim 17, wherein, The gas pipeline is further connected to an inert gas source.

20. The system of claim 17 further includes a controller that communicates with the first valve and the second valve and is configured to operate the first valve and the second valve.

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