Semiconductor component curved surface processing method and system, top electrode, equipment and medium

Abstract

The invention relates to a processing method of a curved surface of a semiconductor component, a processing system of the curved surface of the semiconductor component, a top electrode, computing equipment and a computer readable storage medium. In one aspect, the processing method for the curved surface of the semiconductor component comprises the following steps: rotating the semiconductor component at a first rotating speed, and rotating a grinding tool at a second rotating speed; controlling a grinding tool to grind the curved surface of the semiconductor component along a preset path; in the grinding process, position information of the grinding tool relative to the semiconductor component is obtained; according to the position information, executing at least one of the following steps to keep the kinetic parameters of the grinding area at a preset target value: determining the effective workpiece diameter of the semiconductor part at the contact point corresponding to the position information, and dynamically adjusting the first rotating speed based on the change of the effective workpiece diameter; and determining an effective grinding diameter of the grinding tool at the contact point and dynamically adjusting the second rotational speed based on a change thereof. Therefore, the surface quality of the curved surface of the processed semiconductor component can be improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a method for processing curved surfaces of semiconductor components, a system for processing curved surfaces of semiconductor components, a top electrode, a computing device, and a computer-readable storage medium. Background Technology

[0002] In the miniaturization of semiconductor devices, in order to solve the step coverage problem faced by planar electrodes and overcome electrical performance bottlenecks, electrode structures are gradually shifting from traditional planar shapes to smooth, rounded curved surfaces. Therefore, surface finishing technology for such semiconductor components (such as top electrodes with curved designs used in plasma processing) has become a key aspect of the manufacturing process.

[0003] In related technologies, the curved surfaces of such semiconductor components are typically precision ground using CNC grinding machines. During the machining process, to ensure processing efficiency and simplicity of control logic, CNC grinding machines generally employ a "constant speed machining" mode. Specifically, the drive unit controls the grinding tool (such as a grinding wheel) to rotate at a set constant speed, while simultaneously controlling the semiconductor component to rotate at a set constant speed. The grinding tool is also controlled to move along the curved surface contour of the semiconductor component from a starting position (such as an edge) to an ending position (such as the center) according to a preset feed rate, thereby completing the material removal from the curved surface.

[0004] However, in actual production, it has been found that despite strict control of rotational speed stability using relevant technologies, the surface quality of the processed semiconductor components still falls short of the stringent requirements of high-end devices. For example, the processed surfaces often exhibit noticeable color differences, and visible tool marks are easily left on the surface. Furthermore, batch processing also suffers from poor dimensional consistency in the curved surface contours. This not only affects the product's appearance quality but may also impact the final electrical performance and reliability of the semiconductor device. Summary of the Invention

[0005] This section provides a general overview of this disclosure, rather than a full disclosure of the entire scope or all features of this disclosure.

[0006] According to one aspect of this disclosure, a method for processing a curved surface of a semiconductor component is provided. The method includes: rotating the semiconductor component at a first rotational speed and rotating a grinding tool at a second rotational speed; controlling the grinding tool to grind the curved surface of the semiconductor component along a predetermined path; during the grinding process, acquiring position information of the grinding tool relative to the semiconductor component; and, based on the position information, performing at least one of the following to maintain the dynamic parameters of the grinding area at preset target values: determining the effective workpiece diameter of the semiconductor component at a contact point corresponding to the position information, and dynamically adjusting the first rotational speed based on changes in the effective workpiece diameter; and determining the effective grinding diameter of the grinding tool at the contact point, and dynamically adjusting the second rotational speed based on changes in the effective grinding diameter.

[0007] According to another aspect of this disclosure, a method for processing a curved surface of a semiconductor component is also provided. The method includes: rotating the semiconductor component at a first rotational speed and rotating a polishing tool at a second rotational speed; controlling the polishing tool to polish the curved surface of the semiconductor component along a predetermined path; during the polishing process, acquiring position information of the polishing tool relative to the semiconductor component; determining, based on the position information, an effective polishing diameter of the polishing tool at a contact point corresponding to the position information; and dynamically adjusting the second rotational speed based on changes in the effective polishing diameter to maintain the linear velocity of the polishing tool at the contact point at a preset target value.

[0008] According to another aspect of this disclosure, a processing system for a curved surface of a semiconductor component is also provided. The processing system includes a first drive unit, a second drive unit, a feed unit, and a control unit. The first drive unit is configured to drive the semiconductor component to rotate. The second drive unit is configured to drive a polishing tool to rotate. The feed unit is configured to change the relative position of the polishing tool and the semiconductor component. The control unit is communicatively connected to the first drive unit, the second drive unit, and the feed unit, and is configured to execute the processing method for the curved surface of the semiconductor component according to any of the preceding aspects.

[0009] According to another aspect of this disclosure, a top electrode for plasma processing is also provided. This top electrode has a curved surface processed by a semiconductor component surface processing method according to any of the preceding aspects.

[0010] According to another aspect of this disclosure, a computing device is also provided. The computing device includes a processor and a memory, the processor being configured to execute instructions stored in the memory to implement the method for fabricating a curved surface of a semiconductor component according to any of the preceding aspects.

[0011] According to yet another aspect of this disclosure, a computer-readable storage medium is also provided. This computer-readable storage medium stores at least one instruction, which is executed by a processor to implement a method for fabricating a curved surface of a semiconductor component according to any of the preceding aspects.

[0012] According to the above technical solution, by acquiring the positional information of the grinding tool relative to the semiconductor component during the grinding process, and determining the effective workpiece diameter and / or effective grinding diameter at the contact point based on this positional information, the first rotational speed of the semiconductor component and / or the second rotational speed of the grinding tool are dynamically adjusted. This dynamic adjustment can offset the fluctuations in dynamic parameters (such as linear velocity and speed ratio) caused by changes in the surface geometry, maintaining the dynamic parameters during the grinding process at preset target values. Therefore, the surface quality of the processed semiconductor component surface can be improved to meet the stringent requirements of high-end devices. Attached Figure Description

[0013] The features and advantages of embodiments of the present disclosure will become more readily understood from the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show detail of specific parts. In the drawings: Figure 1 This is a schematic diagram of a semiconductor component surface processing system according to an embodiment of the present disclosure.

[0014] Figure 2 for Figure 1 The diagram shows the geometric relationship between the grinding tool and the semiconductor component at different contact points.

[0015] Figure 3 This is a schematic diagram of a grinding tool feeding from the edge to the center along the curvature path of a semiconductor component.

[0016] Figure 4 This is a flowchart of a semiconductor component surface fabrication method according to an embodiment of the present disclosure.

[0017] Figure 5 This is a schematic diagram of a top electrode for plasma processing according to an embodiment of the present disclosure.

[0018] Figure 6 This is a schematic diagram of a computing device according to an embodiment of the present disclosure.

[0019] In the accompanying drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. Detailed Implementation

[0020] The present disclosure will now be described in detail with reference to the accompanying drawings and exemplary embodiments. It should be noted that the following detailed description of the present disclosure is for illustrative purposes only and is not intended to limit the scope of the disclosure.

[0021] It should be noted that, for clarity, not all features of a particular embodiment are described or shown in the specification and drawings. Furthermore, to avoid unnecessary details obscuring the technical solutions of interest in this disclosure, only the device structures and parts closely related to the technical solutions of this disclosure are described and shown in the specification and drawings, while other details that are not closely related to the technical content of this disclosure and are known to those skilled in the art are omitted.

[0022] Reference Figure 1 The illustration shows a semiconductor component surface processing system 100 provided by an embodiment of the present disclosure. The processing system 100 is used for high-precision grinding of the curved surface of a semiconductor component 200, particularly for top electrodes with curved designs for plasma processing.

[0023] The machining system 100 includes a first drive unit 120, a second drive unit 140, a feed unit 160, and a control unit 180.

[0024] The first drive unit 120 is configured to drive (shown schematically in dashed lines) the semiconductor component 200 to rotate about its own axis L1.

[0025] The first drive unit 120 may be, for example, a high-precision servo motor, a direct-drive torque motor, or an electric spindle. The semiconductor component 200 may be mounted on the output shaft of the first drive unit 120 or a rotary table, for example, using a vacuum chuck, a mechanical chuck, or a dedicated precision tooling fixture. Exemplarily, the first drive unit 120 may be equipped with a rotary encoder for real-time feedback of the angular position and rotational speed of the semiconductor component 200. In this disclosure, the rotational speed of the semiconductor component 200 during processing is defined as a first rotational speed N. w In actual processing, semiconductor component 200 is usually used as a workpiece.

[0026] The second drive unit 140 is configured to drive (shown schematically in dashed lines) the grinding tool 300 to rotate about its own axis L2.

[0027] The grinding tool 300 is typically a grinding wheel. In embodiments of this disclosure, the grinding tool 300 is a grinding wheel with a curved grinding surface, such as a ball-end grinding wheel or a round-edge grinding wheel. Exemplarily, the grinding tool 300 can be a diamond grinding wheel or a cubic boron nitride (CBN) grinding wheel, suitable for processing hard and brittle semiconductor materials such as silicon (Si), silicon carbide (SiC), and boron carbide (B4C). The second drive unit 140 can be a high-speed precision electric spindle capable of providing high rotational speeds to meet the linear rate required for grinding, i.e., the magnitude of the linear velocity. In this disclosure, the rotational speed of the grinding tool 300 during processing is defined as the second rotational speed N. s .

[0028] The feed unit 160 is configured to change the relative position of the grinding tool 300 and the semiconductor component 200.

[0029] exist Figure 1 The image only shows, schematically, the feed unit 160 driving the polishing tool 300 to move in the direction indicated by arrow A, to change the relative position of the polishing tool 300 and the semiconductor component 200. However, it is understood that the feed unit 160 may also drive the semiconductor component 200 to move, or drive both the polishing tool 300 and the semiconductor component 200 to move.

[0030] The feed unit 160 may include a multi-axis CNC platform, such as an X-axis module and a Z-axis linear module. The X-axis module drives the grinding tool 300 to move horizontally to control the radial feed of the semiconductor component 200; the Z-axis module drives the grinding tool 300 to move vertically to control the axial cut of the semiconductor component 200. The feed unit 160 drives the grinding tool 300 or the first drive unit 120 (along with the semiconductor component 200) to move, enabling the grinding tool 300 to perform enveloping cuts relative to the surface of the semiconductor component 200 along a predetermined machining path. The feed unit 160 may be equipped with position sensors to accurately feedback the coordinate positions of each axis.

[0031] The control unit 180 is communicatively connected to the first drive unit 120, the second drive unit 140 and the feed unit 160 (shown schematically in dashed lines).

[0032] Exemplarily, the control unit 180 may be a Computer Numerical Control (CNC) system, a Programmable Logic Controller (PLC), an Industrial Personal Computer (IPC), or a dedicated motion controller based on a Field-Programmable Gate Array (FPGA / Digital Signal Processor) / DSP. The control unit 180 is used to parse the machining program, perform calculations, and send speed and position commands to each drive unit. In this disclosure, the control unit 180 is configured to perform the machining method for semiconductor component surfaces provided by embodiments of this disclosure (which will be described in detail below).

[0033] To gain a deeper understanding of the technical solution of this disclosure, firstly, in conjunction with reference to... Figure 2 and Figure 3 This paper elaborates on the changes in geometric relationships during the surface machining process and the resulting technical problems.

[0034] like Figure 2 and Figure 3 As shown, semiconductor component 200 (e.g., a top electrode with a curved surface for plasma processing) has a curved surface to be processed. This surface is typically symmetrical about a central axis, and its contour has varying curvature. Grinding tool 300 (e.g., a grinding wheel) also has a curved grinding surface. The processing typically involves controlling the grinding tool 300 to move along a predetermined path from an edge region (e.g., edge point A), through an intermediate region (e.g., intermediate point B), towards a central region (e.g., central point C), or from a central region towards an edge region.

[0035] Regarding the previously mentioned issues of color difference and tool marks in the surface processing of semiconductor components, the inventors discovered that the root cause of these problems lies in the fact that the dynamic changes in the "geometric contact conditions" during the surface processing cause drastic changes in the "kinetic parameters" of the grinding zone.

[0036] Specifically, the inventors noted that during the finishing of a semiconductor component (e.g., a top electrode for plasma processing with a central axisymmetric curved surface) 200, the polishing tool 300 typically needs to be fed along a curvature path from one point (e.g., edge point A) to another point (e.g., center point C), such as... Figure 3 As shown. During this process, although the relevant technology maintains the grinding tool's rotational speed N at 300... s and the rotational speed N of semiconductor components wWhile the physical field remains constant, the actual grinding physical field undergoes drastic changes.

[0037] First, as the grinding contact point moves from the edge of the semiconductor component 200 towards the center, the diameter of the rotational section circle of the semiconductor component 200 where the contact point is located (i.e., the effective workpiece diameter D) increases. w The value is continuously decreasing. According to the linear velocity formula V = π·D·N (where V is the linear velocity, D is the effective diameter, and N is the rotational speed), the rotational speed N of the semiconductor component 200 is... w Under constant conditions, the linear velocity V of the semiconductor component at the contact point w The effective workpiece diameter D will continue to decrease as the contact point moves closer to the center. This is especially true near the center point C. w Approaching zero, causing the linear velocity V of the semiconductor component to... w A sharp decline.

[0038] Furthermore, since the grinding surface of the grinding tool (such as a grinding wheel) 300 is also curved, when it moves along the curved surface of the semiconductor component 200, the contact point between the grinding tool 300 and the semiconductor component 200 will also be displaced on the grinding surface of the grinding tool 300. This means that the effective grinding diameter of the grinding tool 300 at the contact point (i.e., the diameter of the circle of rotation of the grinding wheel at that contact point) D s Changes are also occurring. At a grinding tool speed of 300 N... s Under constant conditions, this will result in the linear rate V of the grinding tool 300. s Unexpected fluctuations occurred.

[0039] The surface quality of grinding (including roughness, texture orientation, and material removal mechanism) largely depends on the dynamic parameters of the grinding zone, such as the linear velocity V of the semiconductor component 200. w And the linear velocity V of the grinding tool 300 s And the speed ratio q, that is, the linear speed V of the grinding tool 300. s With the linear velocity V of semiconductor component 200 w The ratio (q=V) s / V w In constant speed machining mode, the linear velocity V of semiconductor component 200 w And the linear velocity V of the grinding tool 300 s These changes will lead to drastic variations in the dynamic parameters of the grinding zone, which will severely affect the surface quality of the grinding process.

[0040] For example, due to the linear velocity V of semiconductor component 200 w The linear velocity V of the grinding tool 300 decreases significantly as the path moves towards the center. sThe relatively small changes in speed ratio q lead to an uncontrollable, nonlinear increase. Drastic changes in speed ratio q directly alter the material removal mechanism (e.g., from ductile removal to brittle removal), resulting in different surface microstructures in different regions of the processed surface of the semiconductor component 200. This difference in microstructure manifests as "color difference" in macroscopic optics; for example, the edge region may exhibit one type of gloss, while the central region may exhibit a different type. Simultaneously, fluctuations in speed ratio q also cause inconsistencies in the wear rate of the grinding tool 300, leading to deviations in surface profile and the formation of tool marks.

[0041] To address the aforementioned problems, according to embodiments of this disclosure, a method for fabricating curved surfaces of semiconductor components is provided. Hereinafter, referring to… Figure 4 The processing method will be described in detail.

[0042] The processing method includes the following steps: Step S301: Move the semiconductor component 200 at a first rotational speed N w Rotate, and make the grinding tool 300 rotate at a second speed N. s Rotate.

[0043] Before processing begins, the control unit 180 sends a start command to the first drive unit 120, causing the semiconductor component 200 to reach an initial first rotational speed N. w Simultaneously, a start command is sent to the second drive unit 140, causing the grinding tool 300 to reach its initial second rotational speed N. s The initial rotational speed can be set based on the process parameters at the starting point of the machining process. For example, if the machining starts from the edge, the initial rotational speed can be set based on the diameter at the edge and the target linear velocity.

[0044] Step S302: Control the grinding tool 300 to grind the curved surface of the semiconductor component 200 along a predetermined path.

[0045] The control unit 180 can parse a pre-programmed machining program and control the grinding tool 300 to contact the semiconductor component 200 via the feed unit 160, and start feeding along a predetermined path (e.g., an arc path from edge point A to center point C). During the feeding process, the grinding tool 300 removes surface material from the semiconductor component 200.

[0046] Step S303: During the grinding process, the position information of the grinding tool 300 relative to the semiconductor component 200 is obtained.

[0047] It is conceivable that the position information can be obtained by the control unit 180 reading the coordinates of each axis (e.g., X and Z axis coordinates) of the feed unit 160 in real time. Since the geometry of the machining system is fixed, the position of the grinding tool 300 relative to the semiconductor component 200 can be determined as long as the coordinate values ​​of each axis are known.

[0048] It is also conceivable that the position information is obtained by pre-reading the processing program. When the control unit 180 executes a certain line of instructions, it knows the endpoint coordinates corresponding to the instructions and the instantaneous coordinates during the interpolation process.

[0049] For example, the position information can be represented as the coordinates of the center point of the grinding tool 300 in the coordinate system of the semiconductor component 200.

[0050] Step S304: Based on the location information, perform at least one of the following to maintain the kinetic parameters of the grinding zone at a preset target value: Determine the effective workpiece diameter D of semiconductor component 200 at the contact point corresponding to the position information. w And based on the effective workpiece diameter D w Dynamic adjustment of the first rotational speed N w ;as well as Determine the effective grinding diameter D of the grinding tool 300 at the contact point. s And based on the effective grinding diameter D s Dynamic adjustment of the second speed N s .

[0051] For example, the control unit 180 may store the surface equation of the semiconductor component 200 and / or the shape parameters of the grinding tool 300 (such as the grinding wheel radius, arc radius, etc.). Based on the real-time position information obtained in step S303, the control unit 180 can calculate the effective workpiece diameter D. w and / or effective grinding diameter D s .

[0052] For example, when calculating the effective workpiece diameter D w At that time, based on the position information, the vertical distance from the corresponding contact point to the rotation axis L1 of the semiconductor component 200 can be calculated, and twice this vertical distance is D. w .

[0053] When calculating the effective grinding diameter D s At that time, the rotation diameter of the grinding tool 300 at the contact point can be calculated based on the position of the contact point on the grinding tool 300. This rotation diameter is D. s For example, for a shaped grinding wheel, the radius of gyration at the contact point is the perpendicular distance from that contact point to the axis of rotation L2 of the grinding wheel.

[0054] The control unit 180 calculates D in real time. w and / or D s By combining the preset target dynamic parameters, the first rotational speed N that should be present at the current moment is determined in reverse. w and / or the second rotational speed N s And send speed adjustment commands to the first drive unit 120 and / or the second drive unit 140.

[0055] Kinetic parameters are physical quantities that describe energy transfer, relative motion, or mechanical state during the grinding process. For example, the kinetic parameters of the grinding zone may include linear velocity (e.g., the linear velocity of a semiconductor component and the linear velocity of the grinding tool), speed ratio, grinding removal rate, maximum cutting thickness of a single abrasive grain, etc. It can be understood that any parameter that is kept constant by adjusting the rotational speed falls within the scope of kinetic parameters.

[0056] By dynamically adjusting the first rotational speed N w Second speed N s At least one of them, to keep the dynamic parameters of the grinding zone at a preset target value, can keep the dynamic parameters stable, thereby effectively improving the surface quality of the curved surface of the semiconductor component 200 after grinding.

[0057] In some embodiments, the dynamic parameters may include a speed ratio q, which is the linear velocity V of the grinding tool 300 at the contact point. s The linear velocity V at the contact point of the semiconductor component 200 w The ratio of .

[0058] By controlling the speed ratio q within a preset target value, the speed ratio q can be kept constant. This reduces the surface microstructure differences between different regions of the processed surface of the semiconductor component 200, thereby reducing color differences. Furthermore, a constant speed ratio q improves the uniformity of wear on the grinding tool 300, and consequently enhances the consistency of the surface texture of the processed surface of the semiconductor component 200, reducing tool marks and minimizing surface profile deviations caused by shape changes in the grinding tool 300 due to uneven wear.

[0059] Given a speed ratio of q as the dynamic parameter, it can be envisioned that the speed ratio q can be determined based on the effective workpiece diameter D. w Dynamic adjustment of the first rotational speed N w And thus, it remains at the target value.

[0060] The effective grinding diameter D of the grinding tool 300 s If the change is not significant, or to simplify control, the second speed N can be maintained. s Constant. At this point, in order to keep the speed ratio q constant, D must be satisfied.w ·N w It is a constant. This means that N is a constant. w With D w Inversely proportional. As processing proceeds from the edge to the center, D... w Decrease, control unit 180 controls the first speed N w Increase.

[0061] In this way, the problem caused by D was directly solved. w Decrease leads to V w The problem of reduced diameter is addressed by increasing the rotational speed to compensate for the decrease in diameter, thereby maintaining V. w The speed ratio q remains constant.

[0062] It can also be envisioned that the speed ratio q can be determined based on the effective workpiece diameter D. w Dynamic adjustment of the first rotational speed N w At the same time, based on the effective grinding diameter D s Dynamic adjustment of the second speed N s And thus, it remains at the target value.

[0063] In other words, by dynamically adjusting the first rotational speed N w Second speed N s These two factors are used to maintain the speed ratio q at the target value. In this way, regardless of changes in the contact points, the processing conditions (cutting force, grinding thickness, etc.) at every point on the entire machined surface of the semiconductor component can be kept completely consistent, thereby more effectively reducing color difference and dimensional errors.

[0064] In some implementations, the kinetic parameters may include the linear velocity V of the grinding tool 300 at the point of contact. s linear velocity V s Based on the effective grinding diameter D s Dynamic adjustment of the second speed N s And thus, it remains at the target value.

[0065] As mentioned earlier, during the grinding process, the contact point moves on the curved grinding surface of the grinding tool 300, thus increasing the effective grinding diameter D. s The constant changes affect the linear velocity V. s Stability.

[0066] By adjusting the second speed N s Come on V s Maintaining the target value allows V to be sustained. s The constant cutting force can prevent insufficient cutting force or excessive abrasive load on the grinding surface, thereby improving the machining quality of curved surfaces.

[0067] It is conceivable that, in the processing method disclosed herein, the effective grinding diameter D of the grinding tool 300 at the contact point corresponding to the position information of the grinding tool 300 relative to the semiconductor component 200 can also be determined based on the position information of the grinding tool 300. s And based on the effective grinding diameter D s The change in N dynamically adjusts the second speed N. s The grinding tool 300 is moved at a linear speed V at the contact point. s Maintain the preset target value.

[0068] It is conceivable that the aforementioned dynamic adjustment may include performing the adjustment by consulting a pre-generated lookup table or by real-time calculation of the controller, wherein the lookup table or real-time calculation maps the position information coordinates of the grinding tool 300 on a predetermined path to the corresponding target rotation speed command.

[0069] Specifically, consulting a pre-generated lookup table is an offline planning method. Before processing, technicians can use software to simulate the processing, discretizing the predetermined path into a series of path points. For each path point, the corresponding D is pre-calculated. w and D s And calculate the required rotational speed N at this path point based on the target parameters. w and N s These data can be pre-compiled into lookup tables and stored in the memory of the control unit 180. In actual machining, the control unit 180 does not need to perform complex calculations; it only needs to look up the table and perform simple linear interpolation based on the current feed position (i.e., position information) to obtain the target rotational speed. This method has a fast response and requires less computing power from the controller.

[0070] On the other hand, real-time computation is an online calculation method. The control unit 180 can store, for example, the surface equations of the semiconductor component 200 and the geometric parameters of the grinding tool 300. The control unit 180 can perform the following steps: read the current coordinates of each axis; calculate the current contact point; calculate D... w and D s ; Calculate N w and N s The target rotation speed is calculated and sent as an instruction to the first drive unit 120 and the second drive unit 140. This method is highly adaptable, does not require regenerating tables for each semiconductor component 200, and can adapt to online compensation during the processing (e.g., wear compensation for the grinding tool 300).

[0071] On the other hand, according to embodiments of this disclosure, referring to Figure 5 A top electrode 10 for plasma processing is also provided.

[0072] The top electrode 10 has a smooth, centrally symmetrical curved surface 11, which is fabricated by the aforementioned semiconductor component surface fabrication method.

[0073] Since the dynamic parameters (e.g., speed ratio q) remain constant throughout the entire process of machining the curved surface 11, the curved surface 11 has the following significant characteristics: the entire curved surface 11, from the edge to the center, exhibits a consistent surface texture, uniform gloss, and no color difference when observed under a microscope; the contour accuracy of the curved surface 11 is high, closely matching the design contour, thereby ensuring the uniformity of the electric field distribution of the top electrode in the semiconductor device; and the roughness difference between the edge region and the center region is extremely small (e.g., the deviation is less than 0.05 μm), overcoming the problem of large roughness differences between the edge region and the center region in traditional machining.

[0074] In another aspect, according to the embodiments of this disclosure, referring to Figure 6 It also provides a computing device 20.

[0075] In some examples, computing device 20 can be at least one of devices such as smartphones, smartwatches, desktop computers, laptops, virtual reality terminals, augmented reality terminals, wireless terminals, and laptop computers. Computing device 20 has communication capabilities and can access wired or wireless networks. Computing device 20 can refer to one of multiple terminals; those skilled in the art will understand that the number of such terminals can be more or less. In some examples, computing device 20 can receive data based on the accessed wired or wireless network. It is understood that computing device 20 undertakes the computation and processing work of the technical solution of this disclosure, and this disclosure does not limit it in this regard.

[0076] like Figure 6 As shown, the computing device 20 may include a processor 22 and a memory 24. The processor 22 is used to execute instructions stored in the memory 24 to implement the semiconductor component surface fabrication method as described in the above embodiments.

[0077] For example, processor 22 connects to various parts within the computing device 20 using various interfaces and lines. It performs various functions and processes data by running or executing instructions, programs, code sets, or instruction sets stored in memory 24, and by calling data stored in memory 24. For instance, processor 22 can be implemented using at least one hardware form of Digital Signal Processing (DSP), FPGA, or PLA. Processor 22 can integrate one or more of the following: Central Processing Unit (CPU), Graphics Processing Unit (GPU), Neural-network Processing Unit (NPU), and baseband chip. The CPU primarily handles the operating system, user interface, and applications; the GPU is responsible for rendering and drawing the content required for the touchscreen display; the NPU implements Artificial Intelligence (AI) functions; and the baseband chip handles wireless communication. It is understood that the baseband chip can also be implemented as a separate chip without being integrated into processor 22.

[0078] The memory 24 may include random access memory (RAM) or read-only memory (ROM). For example, the memory 24 may include non-transitory computer-readable storage medium. The memory 24 may be used to store instructions, programs, code, code sets, or instruction sets. The memory 24 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as touch function, sound playback function, image playback function, etc.), instructions for implementing the above-described method implementations, etc.; the data storage area may store data created according to the use of the computing device, etc.

[0079] In addition, those skilled in the art will understand that the structure of the computing device shown in the above figures does not constitute a limitation on the computing device. The computing device may include more or fewer components than shown, or combine certain components, or have different component arrangements. For example, the computing device may also include a display screen, camera assembly, microphone, speaker, radio frequency circuit, input unit, sensors (such as accelerometer, angular velocity sensor, light sensor, etc.), audio circuit, WiFi module, power supply, Bluetooth module, etc., which will not be described in detail here.

[0080] In another aspect, according to embodiments of the present disclosure, a computer-readable storage medium is also provided, which stores at least one instruction for execution by a processor to implement the method for fabricating the surface of a semiconductor component as described in the various embodiments above.

[0081] Those skilled in the art will recognize that the functions described in this disclosure in one or more of the examples above can be implemented using hardware, software, firmware, or any combination thereof. When implemented in software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or code on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any medium that facilitates the transfer of a computer program from one place to another. Storage media can be any available medium accessible to a general-purpose or special-purpose computer.

[0082] In this disclosure, the terms "first," "second," etc., are used for descriptive purposes only and should not be considered restrictive. Furthermore, although this disclosure has been described with reference to exemplary embodiments, it should be understood that this disclosure is not limited to the specific embodiments described and shown herein. Various changes can be made to the exemplary embodiments by those skilled in the art without departing from the scope defined by the claims of this disclosure.

[0083] The features mentioned and / or shown in the foregoing description of exemplary embodiments of this disclosure may be combined in the same or similar manner with one or more other embodiments, combined with features in other embodiments, or substituted for corresponding features in other embodiments. Such combinations or substitutions should also be considered as including within the scope of protection of this disclosure.

Claims

1. A method for processing curved surfaces of semiconductor components, characterized in that, include: The semiconductor component is rotated at a first rotational speed, and the grinding tool is rotated at a second rotational speed. The grinding tool is controlled to grind the curved surface of the semiconductor component along a predetermined path; During the grinding process, the position information of the grinding tool relative to the semiconductor component is acquired; as well as Based on the location information, perform at least one of the following to maintain the kinetic parameters of the grinding zone at a preset target value: The effective workpiece diameter of the semiconductor component at the contact point corresponding to the position information is determined, and the first rotational speed is dynamically adjusted based on the change in the effective workpiece diameter; as well as The effective grinding diameter of the grinding tool at the contact point is determined, and the second rotation speed is dynamically adjusted based on the change in the effective grinding diameter.

2. The method for processing curved surfaces of semiconductor components according to claim 1, characterized in that, The kinetic parameters include the ratio of the linear velocity of the grinding tool at the contact point to the linear velocity of the semiconductor component at the contact point.

3. The method for processing curved surfaces of semiconductor components according to claim 2, characterized in that, The ratio is maintained at the target value by dynamically adjusting the first rotational speed based on the change in the effective workpiece diameter.

4. The method for processing curved surfaces of semiconductor components according to claim 2, characterized in that, The ratio is maintained at the target value by dynamically adjusting the first rotational speed based on the change in the effective workpiece diameter and the second rotational speed based on the change in the effective grinding diameter.

5. The method for processing curved surfaces of semiconductor components according to claim 1, characterized in that, The kinetic parameters include the linear velocity of the grinding tool at the contact point, the linear velocity of the grinding tool being maintained at the target value by dynamically adjusting the second rotational speed based on the change in the effective grinding diameter.

6. The method for processing curved surfaces of semiconductor components according to claim 1, characterized in that, The dynamic adjustment includes performing the adjustment by consulting a pre-generated lookup table or by real-time calculation by the controller; wherein the lookup table or the real-time calculation maps the position information of the grinding tool on a predetermined path to the corresponding target rotation speed command.

7. The method for processing curved surfaces of semiconductor components according to claim 1, characterized in that, The semiconductor component is a top electrode for plasma processing with a central axis symmetric surface, and the grinding is performed from the edge region of the electrode towards the center region.

8. The method for processing curved surfaces of semiconductor components according to claim 1, characterized in that, The grinding tool is a grinding wheel with a curved grinding surface, and the effective grinding diameter is the diameter of the circle of rotation trajectory of the grinding wheel at the contact point.

9. A method for processing curved surfaces of a semiconductor component, characterized in that, include: The semiconductor component is rotated at a first rotational speed, and the grinding tool is rotated at a second rotational speed. The grinding tool is controlled to grind the curved surface of the semiconductor component along a predetermined path; During the grinding process, the position information of the grinding tool relative to the semiconductor component is acquired; Based on the location information, determine the effective grinding diameter of the grinding tool at the contact point corresponding to the location information; as well as Based on the change in the effective grinding diameter, the second rotation speed is dynamically adjusted to maintain the linear velocity of the grinding tool at the contact point at a preset target value.

10. A system for processing curved surfaces of semiconductor components, characterized in that, include: The first driving unit is configured to drive the semiconductor component to rotate; The second drive unit is configured to drive the grinding tool to rotate; The feed unit is configured to change the relative position of the grinding tool and the semiconductor component; as well as A control unit, communicatively connected to the first drive unit, the second drive unit, and the feed unit, is configured to perform a method for processing a semiconductor component surface according to any one of claims 1 to 9.

11. The semiconductor component surface processing system according to claim 10, characterized in that, The grinding tool is a diamond wheel or a cubic boron nitride wheel, and the semiconductor component is made of silicon, silicon carbide, or boron carbide.

12. A top electrode for plasma processing, characterized in that, The top electrode has a centrally axisymmetric surface processed by the semiconductor component surface processing method according to any one of claims 1 to 9.

13. A computing device, characterized in that, The computing device includes a processor and a memory, the processor being configured to execute instructions stored in the memory to implement the method for fabricating a curved surface of a semiconductor component according to any one of claims 1 to 9.

14. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores at least one instruction, which is executed by a processor to implement the method for fabricating a semiconductor component surface according to any one of claims 1 to 9.

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