Method for preparing amorphous thin film
By depositing multiple metal layers on the substrate surface and transferring them with laser, the problems of compositional inhomogeneity and crystalline phase in the preparation of amorphous thin films were solved, and the formation of amorphous layers with uniform composition and improved mechanical properties were achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LG CHEM LTD
- Filing Date
- 2019-06-11
- Publication Date
- 2026-05-12
AI Technical Summary
Existing technologies make it difficult to prepare amorphous thin films with uniform composition, and the prepared amorphous alloys are not thick enough to be processed into thin film form, which easily leads to the formation of crystalline phases and cracks.
Amorphous layers are formed by depositing multiple metal layers on the surface of a substrate and transferring them to another substrate by laser irradiation. The specific steps include depositing a first metal, a second metal, and a third metal layer, adjusting the light reflectivity and melting point difference of the metal layers, and controlling laser parameters such as output, scanning speed, and pulse repetition rate.
This method enables the formation of a uniformly composed amorphous layer on the substrate surface, avoiding the formation of crystalline phases and improving the mechanical properties and processing capabilities of amorphous thin films.
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Figure CN122013111A_ABST
Abstract
Description
[0001] This application is a divisional application of Chinese patent application No. 201980007566.8, filed on June 11, 2019, entitled "Method for Preparing Amorphous Thin Films". Technical Field
[0002] This invention relates to a method for preparing amorphous thin films that enables the easy formation of amorphous layers by laser irradiation. Background Technology
[0003] Amorphous metals theoretically refer to metals that do not have grain boundaries. Furthermore, amorphous metals typically exhibit microcrystalline properties but possess short-range order, which reduces the likelihood of fracture at grain boundaries (the sites of defects) when external forces are applied. In other words, compared to crystalline pure metals or alloys, amorphous metals possess superior mechanical properties.
[0004] To prepare amorphous metals, typically three or more different metals are mixed according to their composition, dissolved in molten metal, and prepared as a bulk amorphous alloy. However, due to the differences in melting temperature of each metal, it is difficult to uniformly control the composition during melting, leading to the formation of crystalline phases. These crystalline phases are the primary sites of defects and become the initiation points for cracks caused by external forces, resulting in alloy fracture due to cracking. Furthermore, the amorphous alloys prepared by methods in related technologies are not thick enough for processing, thus hindering the formation of thin-film amorphous alloys.
[0005] Therefore, there is a need for technology that can manufacture amorphous thin films with uniform composition. Summary of the Invention
[0006] Technical issues
[0007] Therefore, the present invention aims to provide a method for preparing amorphous thin films that can easily prepare amorphous layers.
[0008] However, the problems to be solved by the present invention are not limited to those described above, and other problems not mentioned will be clearly understood by those skilled in the art based on the following description.
[0009] Technical solution
[0010] An exemplary embodiment of the present invention provides a method for preparing an amorphous thin film, the method comprising: forming a multilayer metal layer wherein a first metal layer, a second metal layer, and a third metal layer are sequentially disposed therein by sequentially depositing a first metal, a second metal layer, and a third metal layer on a surface of a first substrate; positioning a surface of a second substrate facing a surface of the first substrate; and forming an amorphous layer comprising the first metal, the second metal, and the third metal on a surface of the second substrate by irradiating the first substrate with a laser in a direction from another surface of the first substrate to one surface.
[0011] Beneficial effects
[0012] According to an exemplary embodiment of the present invention, a method for preparing an amorphous thin film can be used to form an amorphous layer on a second substrate by a simple method of irradiating a multilayer metal layer disposed on a first substrate with a laser.
[0013] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned based on the specification and drawings of this application. Attached Figure Description
[0014] Figure 1 This is a diagram illustrating the process of preparing an amorphous thin film according to an exemplary embodiment of the present invention.
[0015] Figure 2 This is a graph showing the light reflectance of each of the first, second, and third layer composites according to an exemplary embodiment of the present invention.
[0016] Figure 3 These are a set of scanning electron microscope (SEM) images of the surface of the amorphous layer prepared in Example 1 and Comparative Example 1 of the present invention.
[0017] Figure 4a This is a graph showing the X-ray diffraction (XRD) analysis results of the amorphous layer prepared in Example 1 of the present invention. Figure 4b This is a graph showing the XRD analysis results of the amorphous layer prepared in Example 2 of the present invention. Figure 4c This is a graph showing the XRD analysis results of the amorphous layer prepared in Reference Example 1 of the present invention. Figure 4d This is a graph showing the XRD analysis results of the amorphous layer prepared in Reference Example 2 of the present invention. Figure 4e This is a graph showing the XRD analysis results of the multilayer metal layer prepared in Example 1 of the present invention.
[0018] Figure 5 This is a phase diagram showing the compositional range of the multilayer metal layer and amorphous layer prepared in Example 1 of the present invention. Detailed Implementation
[0019] Throughout this application, when a part “includes” a constituent element, unless otherwise specifically described, this does not mean that other constituent elements are excluded, but rather that other constituent elements may be included.
[0020] Throughout this application, when a component is disposed "on" another component, this includes not only the case where one component is in contact with another component, but also the case where there is another component between the two components.
[0021] Throughout this application, the degree terms used, such as “step…” or “…step”, do not mean “step for…”.
[0022] Throughout this application, the unit "weight%" means the weight ratio of the components contained in the component based on the total weight of the component.
[0023] Throughout this application, the unit "atoms%" means the percentage of atoms based on the total number of atoms contained in a component.
[0024] Throughout this application, "light reflectance" means the ratio of the amount of light reflected from a component to the amount of light incident on the component. In this case, the amount of light incident on the component and the amount of light reflected from the component can be measured using a spectrophotometer (Lambda 950, PerkinElmer, Inc.).
[0025] Throughout this application, the scanning speed of a laser refers to the speed at which a laser source moves from one point on the surface of a component irradiated by the laser to another.
[0026] Throughout this application, the laser spot size refers to the distance from one end of the area irradiated by the laser to the other.
[0027] Throughout this application, the pulse repetition rate of a laser means the frequency of the laser per second.
[0028] This instruction manual will be described in more detail below.
[0029] An exemplary embodiment of the present invention provides a method for preparing an amorphous thin film, the method comprising: forming a multilayer metal layer wherein a first metal layer, a second metal layer, and a third metal layer are sequentially disposed therein by sequentially depositing a first metal, a second metal layer, and a third metal layer on a surface of a first substrate; positioning a surface of a second substrate facing a surface of the first substrate; and forming an amorphous layer comprising the first metal, the second metal, and the third metal on a surface of the second substrate by irradiating the first substrate with a laser in a direction from another surface of the first substrate to one surface.
[0030] According to an exemplary embodiment of the present invention, a method for preparing an amorphous thin film can be used to form an amorphous layer on a second substrate by simply irradiating a multilayer metal layer disposed on a first substrate with a laser. Specifically, by irradiating a multilayer metal layer having crystallinity with a laser, the amorphous layer can be easily transferred to a surface of the second substrate.
[0031] Figure 1 This is a diagram illustrating the process of preparing an amorphous thin film according to an exemplary embodiment of the present invention. Specifically, Figure 1 This illustrates the formation of a multilayer metal layer 200, wherein a first metal layer 210, a second metal layer 220, and a third metal layer 230 are sequentially laminated on one surface of a first substrate 100 by sequentially depositing a first metal, a second metal, and a third metal. Furthermore, Figure 1 This illustrates transferring an amorphous layer 400 comprising a first metal, a second metal, and a third metal to a surface of a second substrate 300 by irradiating the first substrate 100 having a multilayer metal layer 200 formed on one surface thereon with a laser L in a direction from one surface of the first substrate 100 to the first surface.
[0032] According to an exemplary embodiment of the present invention, the light reflectivity of the first substrate can be from 1% to 40%. Specifically, the light reflectivity of the first substrate relative to light with wavelengths ranging from 100 nm to 1,064 nm can be from 1% to 40%. More specifically, the light reflectivity of the first substrate can be relative to light with a wavelength of 355 nm. The light reflectivity of the first substrate can be, for example, 30% relative to light with a wavelength of 355 nm. By using a first substrate having a light reflectivity within the above range, laser light irradiating the first substrate in a direction from one surface to the other can effectively reach the multilayer metal layers.
[0033] According to an exemplary embodiment of the present invention, any substrate can be used as the first substrate without limitation, as long as the substrate has the aforementioned light reflectivity. Specifically, as the first substrate, a substrate that promotes the transmission of the laser beam within the wavelength range of the laser beam used to transfer the multilayer metal layers can be used. For example, a glass substrate, a polyethylene terephthalate (PET) substrate, a polyimide (PI) substrate, etc., can be used as the first substrate, but the type of the first substrate is not limited.
[0034] According to an exemplary embodiment of the present invention, the thickness of the first substrate can be from 0.1 mm to 2.0 mm. For example, the thickness of the substrate can be from 0.1 mm to 1.0 mm, or from 1.0 mm to 2.0 mm. By adjusting the thickness of the first substrate within the above range, the laser irradiating the first substrate can be effectively guided on the multilayer metal layer. Furthermore, when the thickness of the first substrate is within the above range, deformation of the first substrate due to the laser can be suppressed. Therefore, degradation of the laser process efficiency can be prevented.
[0035] According to an exemplary embodiment of the present invention, any substrate used in the art can be used as the second substrate without limitation. Furthermore, the type of the second substrate can be selected depending on the purpose of using a second substrate with an amorphous layer. For example, when the amorphous layer is applied to a solar cell electrode, a soda-lime glass substrate; a ceramic substrate, such as alumina and quartz; or a metallic substrate, such as stainless steel, chromium steel, titanium, ferritic steel, and molybdenum, can be used as the second substrate.
[0036] Furthermore, the first substrate and the second substrate can be formed from the same material or different materials.
[0037] According to an exemplary embodiment of the present invention, the deposition of metal can be performed by any of the following methods: sputtering, electron beam deposition, thermal deposition, plasma chemical vapor deposition, and low-pressure chemical vapor deposition. That is, the deposition of the first metal, the second metal, and the third metal can be performed by any of the following methods: sputtering, electron beam deposition, thermal deposition, plasma chemical vapor deposition, and low-pressure chemical vapor deposition. Specifically, a first metal layer, a second metal layer, and a third metal layer with a uniform composition can be formed on a surface of a first substrate by sequentially depositing the first metal, the second metal, and the third metal on a surface of the first substrate using sputtering. Furthermore, when using sputtering, the thickness of the first metal layer, the second metal layer, and the third metal layer to be formed on a surface of the first substrate can be easily adjusted by adjusting the sputtering power, the angle and distance between the sputtering target and the first substrate, etc.
[0038] According to an exemplary embodiment of the present invention, the light reflectivity of the first metal layer may be less than the light reflectivity of each of the second and third metal layers. Specifically, the light reflectivity of the first metal layer may be less than the light reflectivity of the second and third metal layers relative to light having any wavelength value from 100 nm to 1,064 nm. More specifically, the light reflectivity of each of the first, second, and third metal layers may be the light reflectivity relative to light having any wavelength value from 300 nm to 450 nm, and more specifically, it may be the light reflectivity relative to light with a wavelength value of 355 nm.
[0039] Reference Figure 1 The first substrate 100 is irradiated with a laser L in a direction from one surface to the other, and the laser L first contacts the first metal layer 210 of the multilayer metal layers 200. Therefore, by placing the first metal layer with the lowest light reflectivity adjacent to one surface of the first substrate, the degradation of the transfer efficiency from the multilayer metal layers to the amorphous layer can be effectively prevented. Specifically, by ensuring that the laser first reaches the first metal layer, the degree of reflection of the laser beam incident on the first metal layer with the lowest light reflectivity is reduced, thereby preventing degradation of the laser process efficiency.
[0040] According to an exemplary embodiment of the present invention, the light reflectivity of each of the first metal layer, the second metal layer, and the third metal layer can be measured by depositing the first metal layer, the second metal layer, and the third metal layer on a first substrate. For example, the light reflectivity of a first composite consisting of a first substrate and a first metal layer disposed on the first substrate can be measured. Furthermore, the light reflectivity of a second composite consisting of a first substrate and a second metal layer disposed on the first substrate can be measured, and the light reflectivity of a third composite consisting of a first substrate and a third metal layer disposed on the first substrate can be measured.
[0041] According to an exemplary embodiment of the present invention, the light reflectivity of the laminate composed of the first metal layer and the first substrate can be 45% or less. Specifically, the light reflectivity of the laminate composed of the first metal layer and the first substrate can be 1% to 45%, 5% to 40%, 10% to 30%, 15% to 30%, 35% to 45%, 35% to 38%, 38% to 45%, or 38%. Furthermore, the light reflectivity of the laminate can be the reflectivity relative to light having a wavelength value of 100 nm to 1,064 nm or a wavelength value of 300 nm to 450 nm. More specifically, the light reflectivity of the laminate can be the light reflectivity relative to light with a wavelength value of 355 nm. When the light reflectivity of the laminate composed of the first substrate and the first metal layer is within the above range, the degradation of the transfer efficiency from the multilayer metal layers to the amorphous layer can be effectively prevented.
[0042] According to an exemplary embodiment of the present invention, the difference between the highest and lowest melting point values among the first to third metal layers can be between 200°C and 500°C. Specifically, the melting point difference between the metal layer with the highest melting point and the metal layer with the lowest melting point can be 400°C to 450°C, 400°C to 435°C, 435°C to 450°C, 430°C to 440°C, 280°C to 450°C, 300°C to 400°C, 200°C to 270°C, or 310°C to 470°C. When the difference between the highest and lowest melting point values among the first to third metal layers is within the above range, the efficiency of the laser process can be improved. Specifically, by adjusting the difference between the highest and lowest melting point values within the above range, the amount of energy used to transfer the multilayer metal layers can be reduced and the evaporation of the multilayer metal layers can be suppressed. Therefore, due to the rapid evaporation and solidification of the multilayer metal layers, the formation of a crystalline phase on the amorphous layer can be effectively prevented.
[0043] Furthermore, the first metal layer can have the highest melting point, and the third metal layer can have the lowest melting point.
[0044] According to an exemplary embodiment of the present invention, the difference between the melting point of the first metal layer and the melting point of the second metal layer can be from 10°C to 100°C. For example, the difference can be from 10°C to 13°C. Furthermore, the difference between the melting point of the second metal layer and the melting point of the third metal layer can be from 100°C to 450°C. For example, the difference can be from 100°C to 422°C, or from 422°C to 450°C. By adjusting the difference in melting points of the metal layers within the above ranges, the degradation of laser process efficiency can be effectively suppressed.
[0045] Furthermore, according to an exemplary embodiment of the present invention, the melting point of the third metal layer can be between 500°C and 900°C. For example, the melting point can be between 500°C and 650°C, 650°C and 900°C, 600°C and 650°C, or 650°C and 700°C. By adjusting the melting point of the third metal layer within the above range, the transfer efficiency of the multilayer metal layers can be improved. When the melting point of the third metal layer is within the above range, the third metal layer disposed at the last location reached by the laser can also be easily melted and thus transferred to a surface of the second substrate.
[0046] According to an exemplary embodiment of the present invention, the atomic radii of the first metal, the second metal, and the third metal are different from each other. Furthermore, the types of the first metal, the second metal, and the third metal can be selected to achieve the amorphous properties of the amorphous layer by taking into account their atomic radii.
[0047] According to an exemplary embodiment of the present invention, the third metal may include at least one of magnesium, calcium, aluminum, and lanthanum. Furthermore, the first metal may include at least one of copper, yttrium, and silver. Additionally, the second metal may include at least one of samarium and neodymium. However, there are no limitations on the types of the first, second, and third metals, and suitable metallic elements capable of achieving the physical properties of the amorphous layer may be selected and used as the first to third metals.
[0048] By appropriately selecting the types of the first, second, and third metals, an amorphous layer can be formed on one surface of the second substrate. For example, a multilayer metal layer can be prepared as follows: by forming a first metal layer containing copper on one surface of the first substrate, forming a second metal layer containing samarium on the first metal layer, forming a third metal layer containing magnesium on the second metal layer, and then irradiating the multilayer metal layer with a laser, an amorphous layer can be formed on one surface of the second substrate.
[0049] According to an exemplary embodiment of the present invention, the thickness of the multilayer metal layer can be from 1.5 μm to 3.0 μm. Specifically, the thickness of the multilayer metal layer can be from 1.7 μm to 2.8 μm, 2.0 μm to 2.5 μm, 1.5 μm to 1.8 μm, or 2.1 μm to 2.7 μm. By adjusting the thickness of the multilayer metal layer within the above range to improve the transfer efficiency of the multilayer metal layer, an amorphous layer can be easily formed. Furthermore, when the thickness of the multilayer metal layer is within the above range, the surface roughness of the amorphous layer to be formed on one surface of the second substrate can be effectively reduced, and the composition of the amorphous layer can be effectively homogenized.
[0050] According to an exemplary embodiment of the present invention, by irradiating a first substrate on one surface of which multiple metal layers are formed with a laser in a direction from the other surface of the first substrate to one surface of the first substrate, multiple metal layers disposed on one surface of the first substrate can be transferred to one surface of a second substrate, thereby forming an amorphous layer. Specifically, when the laser is incident on the multiple metal layers, the multiple metal layers melt and are thus transferred to one surface of the second substrate, and due to the rapid cooling of the metal layers, an amorphous layer can be formed on one surface of the second substrate.
[0051] According to an exemplary embodiment of the present invention, by adjusting the difference in melting points between the first and third metal layers and / or the thickness of the multilayer metal layers, a large amount of evaporation generated during the transfer of the multilayer metal layers can be suppressed. Specifically, by suppressing evaporation, the formation of crystalline phases due to compositional imbalances in the amorphous layers can be prevented. Furthermore, since the evaporated components cool rapidly and precipitate as powder on the second substrate, the degradation of the transfer efficiency of the multilayer metal layers can be suppressed.
[0052] According to an exemplary embodiment of the present invention, a laser used in the art can be used, specifically, a pulsed laser. More specifically, a pulsed laser with a wavelength of 355 nm can be used as the laser. Furthermore, the laser output can be 1 W / cm². 2 Up to 10 W / cm 2 Specifically, the laser output can be 1.5 W / cm². 2 Up to 8 W / cm 2 1.5 W / cm 2 Up to 8W / cm 2 2 W / cm 2 Up to 6 W / cm 2 2.5 W / cm 2 Up to 4.5 W / cm 2 1 W / cm 2 Up to 2 W / cm 2 or 4 W / cm 2 Up to 8 W / cm 2 By adjusting the laser output within the aforementioned range, energy can be stably transferred to multiple metal layers.
[0053] According to an exemplary embodiment of the present invention, laser irradiation can be performed at a scanning speed of 1 mm / s to 20 mm / s. Specifically, laser irradiation can be performed at a speed of 2 W / cm². 2 The output can be performed at scanning speeds of 2 mm / s to 18 mm / s, 4.5 mm / s to 15 mm / s, 7 mm / s to 12.5 mm / s, 1.5 mm / s to 5 mm / s, 8 mm / s to 13 mm / s, or 15 mm / s to 19 mm / s. More specifically, the laser scanning speed can be 1 mm / s to 5 mm / s, 1.5 mm / s to 4.5 mm / s, 2.0 mm / s to 3.5 mm / s, 1.0 mm / s to 2.5 mm / s, 2.5 mm / s to 5.0 mm / s, 2.5 mm / s to 10 mm / s, 2.5 mm / s to 20.0 mm / s, 5.0 mm / s to 10 mm / s, 5.0 mm / s to 20 mm / s, or 3.0 mm / s to 5.0 mm / s. By adjusting the laser scanning speed within the aforementioned range, the crystallinity of the amorphous layer transferred to one surface of the second substrate can be effectively reduced.
[0054] According to an exemplary embodiment of the present invention, the pulse repetition rate of the laser can be from 1 kHz to 40 kHz. Specifically, the pulse repetition rate of the laser can be from 3 kHz to 35 kHz, 5 kHz to 30 kHz, 10 kHz to 20 kHz, or 13 kHz to 17 kHz. More specifically, the pulse repetition rate of the laser can be from 25 kHz to 35 kHz, or 30 kHz to 40 kHz. For example, the pulse repetition rate of the laser can be 30 kHz. By adjusting the pulse repetition rate of the laser within the above range, the degradation of the laser process efficiency due to the reduced overlap of the focused laser beam can be suppressed. Furthermore, when the pulse repetition rate of the laser is within the above range, the decomposition of the first substrate due to excessive energy irradiation can be prevented.
[0055] According to an exemplary embodiment of the present invention, laser irradiation can be performed with a spot size of 10 μm to 200 μm. Specifically, laser irradiation can be performed with a spot size of 20 μm to 180 μm, 40 μm to 160 μm, or 70 μm to 120 μm. More specifically, laser irradiation can be performed with a spot size of 15 μm to 40 μm, 20 μm to 30 μm, or 25 μm to 30 μm. For example, the spot size can be 25 μm. By adjusting the laser spot size within the above ranges, thermal deformation of the first substrate due to laser irradiation can be suppressed. Furthermore, when the laser spot size is within the above ranges, instability in the laser process due to a decrease in the overlap rate of the laser spots can be suppressed.
[0056] According to an exemplary embodiment of the present invention, the laser output, scanning speed, and pulse repetition rate interact with each other, and the laser process conditions can be controlled by adjusting at least one of the laser output, scanning speed, and pulse repetition rate. Furthermore, depending on the object to be irradiated by the laser, the object can also be irradiated by adjusting the laser output, scanning speed, pulse repetition rate, and spot size outside the aforementioned ranges.
[0057] According to an exemplary embodiment of the present invention, the thickness of the amorphous layer can be from 0.01 μm to 3 μm. Specifically, the thickness of the amorphous layer can be from 0.01 μm to 1.4 μm, 1.4 μm to 3.0 μm, 0.05 μm to 2.8 μm, 0.1 μm to 2.0 μm, 0.5 μm to 1.8 μm, 1.0 μm to 1.5 μm, 0.2 μm to 0.7 μm, 1.2 μm to 1.7 μm, or 2.1 μm to 2.5 μm. For example, the thickness can be 1.4 μm. The thickness of the amorphous layer can be controlled by adjusting the thickness of the multilayer metal layers, the laser output, etc.
[0058] Therefore, the method for preparing an amorphous thin film according to an exemplary embodiment of the present invention can readily form an amorphous metal layer in the form of a thin film on one surface of a second substrate.
[0059] Invention Embodiments
[0060] In the following description, the invention will be described in detail with reference to embodiments used to specifically describe the invention. However, embodiments of the invention can be modified in various ways and should not be construed as limiting the scope of the invention to the embodiments described below. Embodiments of this specification are provided to illustrate the invention more completely to those skilled in the art.
[0061] Example 1
[0062] As the first substrate, a glass substrate with a thickness of approximately 1 mm and a light reflectance of approximately 30% relative to light with a wavelength of 355 nm was prepared. Furthermore, as the second substrate, a glass substrate with a thickness of approximately 1 mm was prepared. Thereafter, the output of the sputtering apparatus was set to 250 W / cm². 2 A copper target was sputtered at the DC 1 cathode of the sputtering apparatus to form a first metal layer with a thickness of approximately 0.45 μm on one surface of the first substrate. Subsequently, the output of the sputtering apparatus was set to 25 W / cm². 2 Samarium was sputtered at the RF cathode of the sputtering apparatus to form a second metal layer with a thickness of approximately 0.15 μm on the first metal layer. Subsequently, the output of the sputtering apparatus was set to 300 W / cm². 2 A magnesium target is sputtered at the DC 2 cathode of the sputtering apparatus to form a third metal layer with a thickness of approximately 0.90 μm on the second metal layer. Thus, a multilayer metal layer with a total thickness of approximately 1.5 μm is formed on one surface of the first substrate.
[0063] The second substrate is positioned facing the third metal layer. Then, a pulsed laser with a wavelength of 355 nm (its output, scanning speed, spot size, and pulse repetition rate are set to 2 W / cm²) is used in a direction from one surface of the first substrate to the next. 2 The first substrate was irradiated with light at speeds of 2.5 mm / s, 25 μm, and 30 kHz. As a result, an amorphous layer with a thickness of approximately 1.4 μm was formed on one surface of the second substrate.
[0064] Example 2
[0065] An amorphous layer was formed in the same manner as in Example 1, except that the laser scanning speed was adjusted to 5 mm / second.
[0066] Comparative Example 1
[0067] The amorphous layer was formed in the same manner as in Example 1, except that the output of the sputtering apparatus was set to 125 W / cm. 2 A first metal layer with a thickness of approximately 0.99 μm was formed on a first substrate by sputtering a copper target, with the output of the sputtering apparatus set to 50 W / cm². 2 A second metal layer with a thickness of approximately 0.33 μm was formed on the first metal layer by sputtering a samarium target, with the output of the sputtering device set to 250 W / cm². 2 A third metal layer with a thickness of about 1.98 μm is formed on the second metal layer by sputtering a magnesium target, thereby forming a multilayer metal layer with a total thickness of about 3.3 μm on one surface of the first substrate.
[0068] Reference example 1
[0069] An amorphous layer was formed in the same manner as in Example 1, except that the laser scanning speed was adjusted to 20 mm / second.
[0070] Reference example 2
[0071] An amorphous layer was formed in the same manner as in Example 1, except that the laser scanning speed was adjusted to 10 mm / second.
[0072] Evaluation of physical properties
[0073] The melting points of the first metal layer, the second metal layer, and the third metal layer prepared in Example 1 were measured. As a result, the melting point of the first metal layer was about 1,085°C, the melting point of the second metal layer was about 1,072°C, and the melting point of the third metal layer was about 650°C.
[0074] The light reflectance of each of the first, second, and third metal layers was measured as described below. A glass substrate with a thickness of approximately 1 mm and a light reflectance of approximately 30% relative to a wavelength of 355 nm was prepared by setting the output of the sputtering apparatus to 250 W / cm². 2 A first metal layer with a thickness of approximately 0.45 μm was formed on a glass substrate by sputtering a copper target at the DC 1 cathode of the sputtering apparatus, thereby preparing the first composite layer. Furthermore, the output of the sputtering apparatus was set to 25 W / cm². 2 A second metal layer with a thickness of approximately 0.15 μm was formed on another glass substrate by sputtering samarium at the RF cathode of the sputtering apparatus, thereby preparing a second composite layer. Furthermore, the output of the sputtering apparatus was set to 300 W / cm². 2A magnesium target was sputtered at the DC 2 cathode of the sputtering apparatus to form a third metal layer with a thickness of about 0.90 μm on another glass substrate, thereby preparing the third layer composite.
[0075] Subsequently, the light reflectance of each of the first, second, and third composite layers was measured using a spectrophotometer (Lambda 950, PerkinElmer Inc.).
[0076] Figure 2 This is a graph illustrating the light reflectance of each of the first, second, and third layer composites according to an exemplary embodiment of the present invention. Specifically, Figure 2 The light reflectance of each of the following is shown: a first composite consisting of a first substrate and a first metal layer, a second composite consisting of a first substrate and a second metal layer, and a third composite consisting of a first substrate and a third metal layer.
[0077] Reference Figure 2 The light reflectance of the first composite layer consisting of the first substrate and the first metal layer relative to light with a wavelength of 355 nm was determined to be approximately 38%. Furthermore, the light reflectance of the second composite layer consisting of the first substrate and the second metal layer relative to light with a wavelength of 355 nm was determined to be approximately 78.5%, and the light reflectance of the third composite layer consisting of the first substrate and the third metal layer relative to light with a wavelength of 355 nm was determined to be approximately 76%.
[0078] Observation of the surface of the amorphous layer
[0079] The surfaces of the amorphous layers prepared in Example 1 and Comparative Example 1 of the present invention were observed using a scanning electron microscope (SU8020, HITACHI, Ltd.), and their SEM images were taken.
[0080] Figure 3 These are a set of scanning electron microscope (SEM) images of the surface of the amorphous layer prepared in Example 1 and Comparative Example 1 of the present invention. (Refer to...) Figure 3 In Example 1, where the thickness of the multilayer metal layer was adjusted to approximately 1.5 μm, the surface of the amorphous layer formed due to the transfer of the multilayer metal layer was smooth, and the amorphous metal layer was formed on the surface with a uniform composition. Meanwhile, in Comparative Example 1, where the thickness of the multilayer metal layer was adjusted to approximately 3.3 μm, the surface of the amorphous layer was somewhat rough, and the amorphous metal layer on the surface was not uniform.
[0081] Therefore, it can be seen that, according to an exemplary embodiment of the present invention, by adjusting the thickness of the multilayer metal layer to 1.5 μm to 3.0 μm, the surface roughness of the amorphous layer to be formed can be reduced, and an amorphous layer with a uniform composition can be formed.
[0082] Measurement of the physical properties of amorphous layers
[0083] The amorphous layers prepared in Examples 1 and 2 of the present invention, as well as Reference Examples 1 and 2, were subjected to X-ray diffraction (XRD) analysis using an X-ray diffraction analyzer (D4 endeavor, Bruker Corporation).
[0084] Figure 4a This is a graph showing the X-ray diffraction (XRD) analysis results of the amorphous layer prepared in Example 1 of the present invention. Figure 4b This is a graph showing the XRD analysis results of the amorphous layer prepared in Example 2 of the present invention. Figure 4c This is a graph showing the XRD analysis results of the amorphous layer prepared in Reference Example 1 of the present invention. Figure 4d This is a graph showing the XRD analysis results of the amorphous layer prepared in Reference Example 2 of the present invention. Figure 4e This is a graph showing the XRD analysis results of the multilayer metal layer prepared in Example 1 of the present invention.
[0085] Reference Figure 4e It was determined that the multilayer metal layer prepared in Example 1 of the present invention contains peaks exhibiting crystallinity. Meanwhile, referring to... Figure 4a and Figure 4b It was determined that in Example 1, where the laser scanning speed was adjusted to 2.5 mm / s, and in Example 2, where the laser scanning speed was adjusted to 5 mm / s, the height of the crystallinity peak was very low. That is, it was determined that through Examples 1 and 2, an amorphous layer with amorphous properties can be prepared from a multilayer metal layer having crystallinity.
[0086] Meanwhile, it was determined that in Reference Example 1, where the laser scanning speed was adjusted to 20 mm / s, and in Reference Example 2, where the laser scanning speed was adjusted to 10 mm / s, a slight peak indicating crystallinity appeared. Furthermore, it was determined that in Example 1, compared to Example 2, almost no peak indicating crystallinity appeared.
[0087] Furthermore, the contents of magnesium, copper, and samarium contained in the multilayer metal layer prepared in Example 1 of the present invention and the amorphous layer prepared in Example 1, as obtained by XRD analysis, are shown in Table 1 below.
[0088] [Table 1]
[0089]
[0090] Figure 5 This is a phase diagram illustrating the compositional ranges of the multilayer metal layers and amorphous layers prepared in Embodiment 1 of the present invention. Specifically, Figure 5A phase diagram of the three elements magnesium, copper, and samarium is shown, along with diagrams illustrating the amorphous and crystalline regions according to the content of magnesium, copper, and samarium. More specifically, Figure 5 This is a diagram illustrating the composition of the multilayer metal layer prepared in Embodiment 1 of the present invention, which includes a crystalline region and an amorphous layer, which includes an amorphous region.
[0091] Refer to Table 1 and Figure 5 It was determined that the multilayer metal layer formed in Embodiment 1 of the present invention has crystallinity, but the amorphous metal layer formed on one surface of the second substrate is in amorphous form.
[0092] Therefore, according to an exemplary embodiment of the present invention, it can be seen that an amorphous metal layer can be formed on one surface of a second substrate by a simple method of irradiating a multilayer metal layer with crystallinity using a laser. Furthermore, it can be seen that by adjusting the scanning speed of the laser irradiating the multilayer metal layer, the crystallinity of the amorphous layer transferred to one surface of the second substrate can be effectively reduced.
[0093] [Explanation of reference numerals in the attached figures]
[0094] 100: First base
[0095] 200: Multilayer metal layer
[0096] 210: First metal layer
[0097] 220: Second metal layer
[0098] 230: Third metal layer
[0099] 300: Second base
[0100] 400: Amorphous layer
[0101] This application also includes, for example, the following technical solutions:
[0102] 1. A method for preparing amorphous thin films, the method comprising:
[0103] A multilayer metal layer wherein a first metal layer, a second metal layer, and a third metal layer are sequentially disposed therein is formed by sequentially depositing a first metal, a second metal layer, and a third metal layer on a surface of a first substrate;
[0104] Positioning one surface of the second substrate facing the first surface of the first substrate; and
[0105] An amorphous layer comprising the first metal, the second metal, and the third metal is formed on one surface of the second substrate by irradiating the first substrate with a laser in a direction from the other surface of the first substrate to the first surface.
[0106] 2. The method according to claim 1, wherein the metal deposition is performed by any one of sputtering, electron beam deposition, thermal deposition, plasma chemical vapor deposition, and low-pressure chemical vapor deposition.
[0107] 3. The method according to claim 1, wherein the light reflectivity of the first metal layer is less than the light reflectivity of each of the second metal layer and the third metal layer.
[0108] 4. The method according to claim 1, wherein the light reflectance of the laminate consisting of the first metal layer and the first substrate is 45% or less.
[0109] 5. The method according to item 1, wherein the difference between the highest melting point and the lowest melting point among the melting points of the first metal layer to the third metal layer is 200°C to 500°C.
[0110] 6. The method according to item 1, wherein the thickness of the multilayer metal layer is from 1.5 μm to 3.0 μm.
[0111] 7. The method according to item 1, wherein the laser irradiation is at 1 W / cm 2 Up to 10 W / cm 2 The output is processed.
[0112] 8. The method according to item 1, wherein laser irradiation is performed at a scanning speed of 1 mm / s to 20 mm / s.
[0113] 9. The method according to item 1, wherein laser irradiation is performed with a spot size of 10 μm to 200 μm.
[0114] 10. The method according to item 1, wherein the pulse repetition rate of the laser is from 1 kHz to 40 kHz.
[0115] 11. The method according to item 1, wherein the thickness of the amorphous layer is from 0.01 μm to 3 μm.
Claims
1. A method for preparing amorphous thin films, the method comprising: A multilayer metal layer wherein a first metal layer, a second metal layer, and a third metal layer are sequentially disposed therein is formed by sequentially depositing a first metal, a second metal layer, and a third metal layer on a surface of a first substrate; Position one surface of the second substrate to face the first substrate; as well as An amorphous layer comprising the first metal, the second metal, and the third metal is formed on one surface of the second substrate by irradiating the first substrate with a laser in a direction from the other surface of the first substrate to the first surface. The thickness of the multilayer metal layer is 1.5 μm to 3.0 μm.
2. The method of claim 1, wherein the metal deposition is performed by any one of sputtering, electron beam deposition, thermal deposition, plasma chemical vapor deposition, and low-pressure chemical vapor deposition.
3. The method according to claim 1, wherein the light reflectivity of the first metal layer is less than the light reflectivity of each of the second metal layer and the third metal layer.
4. The method of claim 1, wherein the light reflectance of the laminate formed by the first metal layer and the first substrate is 45% or less.
5. The method according to claim 1, wherein the difference between the highest melting point and the lowest melting point among the melting points of the first metal layer to the third metal layer is 200°C to 500°C.
6. The method of claim 1, wherein the laser irradiation is at a rate of 1 W / cm². 2 Up to 10 W / cm 2 The output is processed.
7. The method of claim 1, wherein laser irradiation is performed at a scanning speed of 1 mm / s to 20 mm / s.
8. The method of claim 1, wherein the laser irradiation is performed with a spot size of 10 μm to 200 μm.
9. The method of claim 1, wherein the pulse repetition rate of the laser is from 1 kHz to 40 kHz.
10. The method according to claim 1, wherein the thickness of the amorphous layer is from 0.01 μm to 3 μm.