A contactless electrostatic levitation support system and method

The non-contact electrostatic levitation support system solves the problem of metal ion and particulate contamination caused by traditional quartz supports by using levitation electrodes and an inert gas fluid isolation layer. It achieves stable levitation and temperature uniformity of wafers at high temperatures, thereby improving the process precision and yield of semiconductor manufacturing.

CN122054969BActive Publication Date: 2026-06-23JIHUA LAB
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Patent Information

Application Number
CN202610489694.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-04-14
Publication Date
2026-06-23
Estimated Expiration
2046-04-14

AI Technical Summary

Technical Problem

In high-temperature industrial equipment, metal ion contamination, particulate contamination, and thermal stress damage caused by traditional quartz supports seriously affect the precision and yield of semiconductor manufacturing processes.

Method used

A non-contact electrostatic suspension support system is adopted, which forms a fluid isolation layer through suspension electrodes and inert gas to avoid physical contact between the wafer and the support. Temperature monitoring components and controllers are used to adjust the gas flow and voltage in real time to maintain the temperature uniformity and stable suspension of the wafer.

Benefits of technology

It effectively avoids metal ion contamination and particulate contamination, improves process stability and repeatability, ensures contactless support for wafers at high temperatures, and enhances process temperature uniformity and wafer processing quality.

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Abstract

The application relates to the technical field of semiconductor manufacturing equipment, and particularly provides a non-contact electrostatic suspension support system and method. The system comprises a process chamber, a suspension electrode, an inert gas supply assembly, a temperature monitoring assembly and a controller. After a wafer to be processed is placed on the suspension electrode, the controller applies a first preset alternating voltage to the suspension electrode to generate an electric field between the wafer to be processed and the suspension electrode and make the wafer to be processed float, then controls the inert gas supply assembly to supply a preset flow of inert gas to each gas outlet to form a fluid isolation layer between the wafer and the suspension electrode, and during process execution, the controller acquires real-time temperature distribution information of the wafer to be processed by using the temperature monitoring assembly, and adjusts the inert gas flow of the gas outlet according to the deviation between the real-time temperature distribution information and a preset target temperature. The system can effectively avoid metal ion pollution, particle pollution and thermal stress damage caused by a traditional support mode.
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