Optical scanning device

Abstract

This optical scanning device is provided with: a base section; a movable part supported by the base part; a connecting part which is connected with the movable part in a manner that the movable part can move relative to the base part; and a mirror layer provided on the movable part, the movable part having a main body part on which the mirror layer is provided, and an annular part that surrounds the main body part across the first through region in a plan view of the movable part and is connected to the connecting part; an annular first through region extending along the outer edge of the movable part, a second through region located further to the outside than the first through region in the direction from the main body part toward the annular part, and a connecting part crossing a portion of the first through region overlapping the second through region in the direction from the main body part toward the annular part are formed. The width of a portion of the movable portion outside the second through region in the direction from the main body portion toward the annular portion is larger than the width of a portion of the movable portion between the first through region and the second through region in the direction from the main body portion toward the annular portion. A third through region that is located further outward than the first through region and is different from the second through region in a direction from the main body portion toward the annular portion is formed, and a connection portion is not formed in a portion of the first through region that overlaps the third through region in the direction from the main body portion toward the annular portion.

Description

[0001] This application was filed on [date]. August 24, 2020 Application number is 202080073178.2 The invention is named reflector Device manufacturing method A divisional application of the patent application. Technical Field

[0002] This disclosure relates to a method for manufacturing a mirror device. Background Technology

[0003] As a MEMS (Micro-Electro-Mechanical Systems) device constructed from an SOI (Silicon On Insulator) substrate, a mirror device is known, which includes: a structure comprising a base and a movable portion supported on the base, and a mirror layer disposed on the movable portion. As a method of manufacturing such a mirror device, sometimes after releasing the movable portion in a manner that the movable portion is movable relative to the base, the wafer is cleaned with a cleaning solution (for example, see Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2006-334697 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] In the manufacturing method of the aforementioned mirror device, since the wafer with movable parts is cleaned by the cleaning fluid, damage may occur to multiple movable parts due to the load brought by the cleaning fluid. In order to suppress the occurrence of such damage, it is considered to reduce the cleaning intensity of the cleaning fluid, but this may leave foreign matter on the wafer.

[0009] The purpose of this disclosure is to provide a method for manufacturing a mirror device that can suppress the generation of damage to the mirror device and the residue of foreign matter.

[0010] Methods for solving problems

[0011] One aspect of this disclosure is a method for manufacturing a mirror device, wherein the mirror device comprises: a structure including a base and a movable portion supported on the base, and a mirror layer disposed on the movable portion. The method for manufacturing the mirror device comprises: a first step of preparing a wafer having a support layer and a device layer; after the first step, forming a slit on the wafer such that the movable portion is movable relative to the base by etching away a portion of each of the support layer and the device layer, and forming multiple portions corresponding to the structure on the wafer; after the second step, performing a third step of wet cleaning the wafer by cleaning it with a cleaning solution; and after the third step, cutting out each of the multiple portions from the wafer. In the second step, through-holes are formed in the wafer outside the slit by etching.

[0012] In this method for manufacturing a mirror device, in the third step, a wafer in a state where the movable parts are movable relative to the base (hereinafter referred to as "released movable parts") is cleaned with a cleaning solution. This allows foreign matter to be removed from the wafer with the multiple movable parts released. Here, in the second step, through-holes are formed in the wafer, outside the slits, by etching. Therefore, in the wet cleaning of the third step, cleaning solution can flow through the through-holes, and the wafer with the multiple movable parts released can be cleaned. Therefore, the load on the multiple movable parts due to the cleaning solution can be reduced, and damage to the multiple movable parts can be suppressed. Thus, according to this method for manufacturing a mirror device, damage to the mirror device and the residue of foreign matter can be suppressed.

[0013] In one aspect of the manufacturing method of the mirror device disclosed herein, a mirror layer may be formed in a second step on a portion of the wafer corresponding to the movable part. This allows foreign matter adhering to the mirror layer to be removed by a wet cleaning process in a third step.

[0014] One aspect of the manufacturing method of the reflective device disclosed herein may further include, between the third and fourth steps, a fifth step of forming a correction layer on a first surface of a wafer on which the reflective layer is formed and / or on a second surface opposite to the first surface. This enables the suppression of foreign matter being covered by the correction layer.

[0015] In one aspect of the manufacturing method of the mirror device disclosed herein, a protective film removal process can be performed in the second step after a portion of the support layer is removed from the wafer, followed by the removal of the protective film, and then multiple steps are completed. This allows foreign matter adhering to the wafer to be removed during the removal of a portion of the support layer from the wafer via the protective film removal process in the second step. Furthermore, during the removal of the protective film, residual foreign matter on the wafer can be removed via wet cleaning in the third step.

[0016] In one aspect of the manufacturing method of the mirror device disclosed herein, the protective film may be removed using a wet process during the protective film removal step. However, if the protective film is removed using a wet process, blemishes may sometimes occur, for example, due to unevenness in the device layer. In such cases, these blemishes can be removed by a third wet cleaning process.

[0017] In one aspect of the manufacturing method of the mirror device disclosed herein, a patterned component removal process may be performed in a second step, after which multiple parts are completed. This removes the patterned component before releasing the multiple movable parts, thus suppressing damage to the mirror device caused by the patterned component removal.

[0018] In one aspect of the manufacturing method of the mirror device disclosed herein, the patterned component may be removed using a wet process during the patterned component removal process. Therefore, since the patterned component is removed before releasing the multiple movable parts, damage to the mirror device can be suppressed even if the patterned component is removed using a wet process.

[0019] In one aspect of the manufacturing method of the reflector device disclosed herein, a plurality of flow holes may be formed in the portion corresponding to the movable part in a second step. Therefore, in the wet cleaning process of the third step, since turbulence of the cleaning fluid becomes easier to generate near the movable part, foreign matter can be reliably removed from the portion corresponding to the movable part.

[0020] In one aspect of the manufacturing method of the reflective device disclosed herein, a flow-through hole may be formed in the portion corresponding to the substrate during a second step. This allows the cleaning solution to flow through the flow-through hole formed in the portion corresponding to the substrate during wet cleaning in the third step. Therefore, the load on the wafer due to the cleaning solution can be reduced, and damage to the reflective device can be suppressed.

[0021] In one aspect of the manufacturing method of the reflector device disclosed herein, a slit may be formed in a second step, such that the movable part is supported on the base by the connecting part, and a flow hole is formed in the portion corresponding to the connecting part. Therefore, in the wet cleaning process of the third step, since turbulence of the cleaning fluid becomes easier to generate near the connecting part, the strength of the connecting part can be maintained, and foreign matter can be reliably removed from the portion corresponding to the connecting part.

[0022] In one aspect of the manufacturing method of the mirror device disclosed herein, a flow-through hole may be formed in a second step, comprising at least a portion of a bent portion. Therefore, in the wet cleaning process of the third step, the load on the bent portion of the flow-through hole due to the cleaning solution is reduced, thereby suppressing wafer damage.

[0023] In one aspect of the manufacturing method of the mirror device disclosed herein, a flow-through hole may be formed in a second step in such a way that the width of the flow-through hole varies in a direction perpendicular to the thickness direction when viewed from the thickness direction of the wafer. This facilitates the generation of turbulent flow of the cleaning solution during the wet cleaning process in the third step, thereby enabling reliable removal of foreign matter from the wafer.

[0024] In one aspect of the manufacturing method of the mirror device disclosed herein, a flow-through hole may be formed in a second step, such that, when viewed from the thickness direction of the wafer, the edge of one side of the flow-through hole and the edge of the other side opposite to the edge of the first side have different shapes. This allows a larger flow-through hole to allow a greater amount of cleaning fluid to flow through it during the wet cleaning process in the third step. Therefore, foreign matter can be reliably removed from the wafer.

[0025] In one aspect of the manufacturing method of the mirror device disclosed herein, the flow-through hole may be formed in a second step by forming a connection portion that spans the flow-through hole. Therefore, during the wet cleaning process in the third step, the wafer is reinforced by the connection portion, thereby suppressing the generation of wafer damage.

[0026] In one aspect of the manufacturing method of the reflective device disclosed herein, a flow-through hole may be formed in a second step, connecting the flow-through hole to a slit. This allows a larger volume of cleaning fluid to flow through the flow-through hole during the wet cleaning process in the third step.

[0027] In one aspect of the manufacturing method of the mirror device disclosed herein, in a second process, the flow-through hole is formed in the portion corresponding to the movable part, such that, when viewed from the thickness direction of the wafer, the flow-through hole comprises a first flow-through region and a second flow-through region adjacent to each other in a direction perpendicular to the thickness direction. Therefore, in the wet cleaning process of the third process, turbulence of the cleaning fluid easily occurs in the area adjacent to the first and second flow-through regions, thus enabling reliable removal of foreign matter from the wafer.

[0028] In one aspect of the manufacturing method of the mirror device disclosed herein, a flow-through hole may be formed in a second step, such that a connection portion spanning the first flow-through region is formed in the direction in which the first flow-through region and the second flow-through region are arranged, as viewed from the thickness direction. Therefore, in the wet cleaning process of the third step, the wafer is reinforced by the connection portion, thus suppressing the generation of wafer damage. Furthermore, in the wet cleaning process of the third step, the cleaning solution can flow through the second flow-through region, thus reducing the load on the connection portion due to the cleaning solution and suppressing damage to the connection portion.

[0029] In one aspect of the manufacturing method of the mirror device disclosed herein, a flow hole may be formed in a second step such that, when viewed from the thickness direction, the width of the second flow region in the direction perpendicular to the thickness direction is smaller than the width of the first flow region in the direction perpendicular to the thickness direction. As a result, the widths of the first and second flow regions differ, thus making it easier to generate turbulence of the cleaning fluid during the wet cleaning process in the third step. Therefore, foreign matter can be reliably removed from the wafer.

[0030] In one aspect of the manufacturing method of the reflector device disclosed herein, a slit may be formed in a second step, such that the movable part is supported on the base by the connecting part, and a second flow region is formed such that, when viewed from the thickness direction, the second flow region is adjacent to the connecting part in the direction in which the first flow region and the second flow region are arranged. Therefore, in the wet cleaning process of the third step, the cleaning fluid can flow through the second flow region, thereby reducing the load on the connecting part due to the cleaning fluid and suppressing damage to the connecting part.

[0031] The effects of the invention

[0032] According to this disclosure, a method for manufacturing a reflective device can be provided, which can suppress the generation of damage to the reflective device and the residue of foreign matter. Attached Figure Description

[0033] Figure 1 This is a top view of the reflector device according to the first embodiment.

[0034] Figure 2 It is along Figure 1 The cross-sectional view of the reflector device along line II-II is shown.

[0035] Figure 3 yes Figure 1 A flowchart illustrating the manufacturing method of the reflector device shown.

[0036] Figure 4 It is used for explanation Figure 1 A cross-sectional view of the manufacturing method of the reflector device shown.

[0037] Figure 5 It is used for explanation Figure 1 A cross-sectional view of the manufacturing method of the reflector device shown.

[0038] Figure 6 It is used for explanation Figure 1 The diagram shows the structure of the patterned component removal and protective film removal in the manufacturing method of the mirror device.

[0039] Figure 7 It is used for explanation Figure 1 A cross-sectional view of the manufacturing method of the reflector device shown.

[0040] Figure 8 It is used for explanation Figure 1 The diagram shows the structure of the wet cleaning process in the manufacturing method of the reflective device.

[0041] Figure 9 It is used for explanation Figure 1 A cross-sectional view of the manufacturing method of the reflector device shown.

[0042] Figure 10 This is a cross-sectional view of the reflector device according to the second embodiment.

[0043] Figure 11 yes Figure 10 A flowchart illustrating the manufacturing method of the reflector device shown.

[0044] Figure 12 It is used for explanation Figure 10 A cross-sectional view of the manufacturing method of the reflector device shown.

[0045] Figure 13 It is used for explanation Figure 10 A cross-sectional view of the manufacturing method of the reflector device shown.

[0046] Figure 14 It is used for explanation Figure 10 A cross-sectional view of the manufacturing method of the reflector device shown.

[0047] Figure 15 It is used for explanation Figure 10 A cross-sectional view of the manufacturing method of the reflector device shown.

[0048] Figure 16 This is a top view of the reflector device according to the third embodiment.

[0049] Figure 17 yes Figure 16 An enlarged view of the reflector device shown.

[0050] Figure 18 This is a top view of the reflector device according to the fourth embodiment.

[0051] Figure 19 This is a top view of a modified mirror device.

[0052] Figure 20 This is a top view of a modified mirror device.

[0053] Figure 21 This is a top view of a modified mirror device.

[0054] Figure 22 This is a top view of a modified mirror device. Detailed Implementation

[0055] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, the same or equivalent parts are labeled with the same reference numerals in the various figures, and repeated descriptions are omitted.

[0056] [First Implementation Method]

[0057] like Figure 1 and Figure 2 As shown, the mirror device 1A of the first embodiment includes a structure 2A, a mirror layer 3, and a correction layer 4. The mirror device 1A is, for example, axially symmetric about each of a first axis X1 along the X-axis and a second axis X2 along the Y-axis. The mirror device 1A may also be point-symmetric about the intersection of the first axis X1 and the second axis X2. The mirror device 1A may also be asymmetrical. The mirror device 1A is a MEMS device, such as an optical switch for optical communication, an optical scanner, etc.

[0058] Structure 2A is, for example, made of an SOI substrate. Structure 2A has a support layer 11, a device layer 12, and an intermediate layer 13. The support layer 11 is a first silicon layer. The device layer 12 is a second silicon layer. The intermediate layer 13 is an insulating layer disposed between the support layer 11 and the device layer 12. As an example, the thickness of the support layer 11 is approximately 100 μm to 700 μm, the thickness of the device layer 12 is approximately 20 μm to 200 μm, and the thickness of the intermediate layer 13 is approximately 50 nm to 3000 nm.

[0059] Structure 2A is, for example, in the shape of a rectangular plate. Structure 2A has a first surface 2a and a second surface 2b. The first surface 2a is the side of device layer 12 opposite to the intermediate layer 13. The second surface 2b is the side of structure 2A opposite to the first surface 2a. The second surface 2b includes: the side of support layer 11 opposite to the intermediate layer 13, and the side of device layer 12 opposite to the first surface 2a.

[0060] Structure 2A is integrally formed from a base portion 21, a first movable portion 22, a second movable portion 23, a pair of first connecting portions 24, and a pair of second connecting portions 25. The base portion 21 is formed from a portion of a support layer 11, a portion of a device layer 12, and a portion of an intermediate layer 13. When viewed from the Z-axis direction (the thickness direction of structure 2A), the base portion 21 is, for example, rectangular and annular. When viewed from the Z-axis direction, the base portion 21 has, for example, dimensions of approximately 10 mm × 15 mm.

[0061] The first movable part 22, the second movable part 23, the first connecting part 24, and the second connecting part 25 are formed by a portion of the device layer 12. The first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively. Specifically, when viewed from the Z-axis direction, the first movable part 22 and the second movable part 23 are disposed inside the base 21. More specifically, when viewed from the Z-axis direction, the second movable part 23 is disposed inside the base 21 via a second slit 23a through the structure 2A. When viewed from the Z-axis direction, the second movable part 23 is, for example, rectangular annular. When viewed from the Z-axis direction, the second slit 23a extends along the outer edge of the second movable part 23. In the second slit 23a, the end face 11a of the support layer 11 of the base 21, the end face 12a of the device layer 12 of the base 21, and the end face 13a of the intermediate layer 13 of the base 21 are exposed, respectively. The second slit 23a is formed to allow the second movable portion 23 to move relative to the base 21. In this embodiment, the second slit 23a has a minimum width required to allow the second movable portion 23 to move relative to the base 21.

[0062] Viewed from the Z-axis direction, each second connecting portion 25 is disposed on both sides of the second movable portion 23 in the Y-axis direction. Each second connecting portion 25 extends linearly along the Y-axis direction, for example. Each second connecting portion 25 is connected to the base base 21 and the second movable portion 23 in a manner that the second movable portion 23 is movable relative to the base base 21. Specifically, each second connecting portion 25 connects the second movable portion 23 to the base base 21 along the second axis X2 in a manner that the second movable portion 23 can swing about the second axis X2. In addition, the second slit 23a includes portions extending along the Y-axis direction on both sides of each second connecting portion 25 in the X-axis direction. That is, each second connecting portion 25 is disposed on the inner side of the base base 21 via the second slit 23a.

[0063] Viewed from the Z-axis direction, the first movable portion 22 is disposed inside the second movable portion 23 via a first slit 22a penetrating the structure 2A. Viewed from the Z-axis direction, the first movable portion 22 is, for example, rectangular in shape. Viewed from the Z-axis direction, the first slit 22a extends along the outer edge of the first movable portion 22. The first slit 22a is formed to allow the first movable portion 22 to move relative to the base 21. In this embodiment, the first slit 22a has a minimum width required to allow the first movable portion 22 to move relative to the base 21.

[0064] Viewed from the Z-axis direction, each first connecting portion 24 is disposed on both sides of the first movable portion 22 in the X-axis direction. Each first connecting portion 24 extends linearly along the X-axis direction, for example. Each first connecting portion 24 is connected to the second movable portion 23 and the first movable portion 22 in such a way that the first movable portion 22 is movable relative to the base 21. Specifically, each first connecting portion 24 connects the first movable portion 22 and the second movable portion 23 to each other on the first axis X1 such that the first movable portion 22 can swing about the first axis X1 along the X-axis direction.

[0065] In structure 2A, a plurality of flow holes 21b, 22b, and 23b are formed penetrating structure 2A. The plurality of flow holes 21b, 22b, and 23b are formed in the portion of structure 2A other than the first slit 22a and the second slit 23a. Specifically, for example, four flow holes 21b are formed in the base 21. Viewed from the Z-axis direction, each flow hole 21b is located at a corner of the base 21. The four flow holes 21b are axially symmetrical about the first axis X1 and the second axis X2. Viewed from the Z-axis direction, each flow hole 21b is, for example, rectangular. Each flow hole 21b penetrates the base 21. In each flow hole 21b, the end face 11b of the support layer 11, the end face 12b of the device layer 12, and the end face 13b of the intermediate layer 13 are exposed. The flow hole 21b is larger than each of the flow holes 22b and 23b.

[0066] A pair of flow holes 22b are formed in the first movable part 22. That is, a plurality of flow holes 22b are formed relative to one first movable part 22. The pair of flow holes 22b are symmetrical about the second axis X2. When viewed from the Z-axis direction, each flow hole 22b is, for example, semi-circular. Each flow hole 22b passes through the first movable part 22.

[0067] A pair of flow holes 23b are formed in the second movable part 23. That is, a plurality of flow holes 23b are formed relative to one second movable part 23. The pair of flow holes 23b are symmetrical about the second axis X2. When viewed from the Z-axis direction, each flow hole 23b is, for example, semi-rectangular annular. When viewed from the Z-axis direction, each flow hole 23b extends along the outer edge of the second movable part 23. Each flow hole 23b penetrates the second movable part 23.

[0068] like Figure 2 As shown, the end face 13a of the intermediate layer 13 is formed in a manner that is not recessed relative to either the end face 11a of the support layer 11 or the end face 12a of the device layer 12. The end faces 13a of the intermediate layer 13, 11a of the support layer 11, and 12a of the device layer 12 are all on the same plane. Similarly, the end face 13b of the intermediate layer 13 is formed in a manner that is not recessed relative to either the end face 11b of the support layer 11 or the end face 12b of the device layer 12. The end faces 13b of the intermediate layer 13, 11b of the support layer 11, and 12b of the device layer 12 are all on the same plane.

[0069] "The end face of the intermediate layer is not recessed relative to either the end face of the support layer or the end face of the device layer" refers to any state other than "when the end face of the intermediate layer is recessed relative to either the end face of the support layer or the end face of the device layer, the end face of the intermediate layer is recessed by more than three times the thickness of the intermediate layer from either the end face of the support layer or the end face of the device layer." Therefore, "the end face of the intermediate layer, the end face of the support layer, and the end face of the device layer are all on the same plane" can certainly be said as "even when the end face of the intermediate layer is recessed relative to either the end face of the support layer or the end face of the device layer, the end face of the intermediate layer is only recessed by 0.5 times the thickness of the intermediate layer from either the end face of the support layer or the end face of the device layer," or it can be said as "the end face of the intermediate layer is not recessed relative to either the end face of the support layer or the end face of the device layer."

[0070] The end face 13a of the intermediate layer 13, relative to both the end face 11a of the support layer 11 and the end face 12a of the device layer 12, is preferably recessed by no more than 3 times the thickness of the intermediate layer 13, more preferably no more than 2 times, further preferably no more than 1 time, and most preferably no more than 0.5 times. In other words, the end face 13a of the intermediate layer 13, relative to both the end face 11a of the support layer 11 and the end face 12a of the device layer 12, is preferably recessed by no more than 3 times the thickness of the intermediate layer 13, more preferably no more than 2 times, further preferably no more than 1 time, and most preferably no more than 0.5 times. Similarly, the end face 13b of the intermediate layer 13, relative to both the end face 11b of the support layer 11 and the end face 12b of the device layer 12, is preferably recessed by no more than 3 times the thickness of the intermediate layer 13, more preferably no more than 2 times, further preferably no more than 1 time, and most preferably no more than 0.5 times. In other words, the end face 13b of the intermediate layer 13 is preferably recessed by no more than 3 times the thickness of the intermediate layer 13 relative to both the end face 11b of the support layer 11 and the end face 12b of the device layer 12. More preferably, it is recessed by no more than 2 times, even more preferably, it is recessed by no more than 1 time, and most preferably, it is recessed by no more than 0.5 times.

[0071] A reflective mirror layer 3 is disposed in the first movable part 22. Specifically, the reflective mirror layer 3 is disposed in the region corresponding to the first movable part 22 on the first surface 2a of the structure 2A. When viewed from the Z-axis direction, the reflective mirror layer 3 is positioned further inward than the pair of flow holes 22b. When viewed from the Z-axis direction, the reflective mirror layer 3 is, for example, circular. The reflective mirror layer 3 is positioned with the intersection of the first axis X1 and the second axis X2 as its center position (center of gravity). The reflective mirror layer 3 is, for example, composed of a reflective film, which is made of aluminum, aluminum alloys, silver, silver alloys, gold, dielectric multilayer films, etc.

[0072] The corrective layer 4 is formed integrally on the second surface 2b. Specifically, the corrective layer 4 is formed at the base 21 on the side of the support layer 11 opposite to the intermediate layer 13. The corrective layer 4 is formed at the first movable part 22, the second movable part 23, each of the first connecting parts 24, and each of the second connecting parts 25 on the side of the device layer 12 opposite to the mirror layer 3. The corrective layer 4 corrects warpage of the first movable part 22, the second movable part 23, each of the first connecting parts 24, and each of the second connecting parts 25. The corrective layer 4 is made of materials such as silicon oxide or silicon nitride. The corrective layer 4 may also be a thin metal film such as aluminum. The thickness of the corrective layer 4 is, for example, in the range of 10 nm to 1000 nm.

[0073] The reflector device 1A also includes a first coil 221 and a second coil 231. The first coil 221, for example, is embedded in the first movable portion 22 and, when viewed from the Z-axis direction, extends spirally outward (outer edge of the first movable portion 22) beyond the pair of flow holes 22b. The second coil 231, for example, is embedded in the second movable portion 23 and, when viewed from the Z-axis direction, extends spirally outward (outer edge of the second movable portion 23) beyond the pair of flow holes 23b. The first coil 221 and the second coil 231 are, for example, made of a metallic material such as copper. Furthermore, in... Figure 2 The diagrams of the first coil 221 and the second coil 231 are omitted.

[0074] In the mirror device 1A configured as described above, the first movable part 22, on which the mirror layer 3 is provided, oscillates around a mutually orthogonal first axis X1 and second axis X2. Specifically, when a drive signal for linear operation is input to the second coil 231 via electrode pads (not shown) and wiring (not shown) provided in the structure 2A, a Lorentz force is applied to the second coil 231 through interaction with the magnetic field generated by the magnetic field generating part (not shown). By balancing this Lorentz force with the elastic force of each second connection part 25, the mirror layer 3 (first movable part 22) and the second movable part 23 can move linearly together around the second axis X2.

[0075] On the other hand, when a drive signal for resonant operation is input to the first coil 221 via the electrode pads and wiring, a Lorentz force is applied to the first coil 221 through interaction with the magnetic field generated by the magnetic field generating part. In addition to this Lorentz force, the mirror layer 3 (first movable part 22) can also resonate around the first axis X1 by utilizing the resonance of the first movable part 22 at the resonant frequency.

[0076] Next, the manufacturing method of the reflector device 1A will be explained. First, as... Figure 3 and Figure 4 As shown in (a), a wafer 10W having a support layer 11, a device layer 12, and an intermediate layer 13 is prepared (step S1, first process). The wafer 10W has a surface (first surface) 10a and a back surface (second surface) 10b opposite to the surface 10a. Surface 10a is the surface that forms the first surface 2a of structure 2A. The wafer 10W includes multiple portions 11W that respectively form structure 2A. The portions 11W are parts of the wafer 10W before the formation of structure 2A. Each process of the method for manufacturing the mirror device 1A is performed at the wafer level. Furthermore, in Figure 4 , Figure 5 , Figure 7 and Figure 9 The image shows a portion 11W of wafer 10W. The following description focuses on portion 11W of wafer 10W.

[0077] Next, by removing a portion of each of the support layer 11, device layer 12, and intermediate layer 13 from the wafer 10W, a first slit 22a and a second slit 23a are formed on the wafer 10W in such a way that the first movable portion 22 and the second movable portion 23 are movable relative to the base 21. Multiple portions 12WA corresponding to the structure 2A are then formed on the wafer 10W (see reference). Figure 7 (b) (Second process). Part 12WA is a portion of the wafer 10W on which structure 2A is formed. First, a portion of device layer 12 is removed from wafer 10W by etching (step S2). Specifically, the portions of device layer 12 corresponding to the first slit 22a, the second slit 23a, and the through holes 21b, 22b, and 23b are removed. As a result, end faces 12a and 12b of device layer 12 are formed. In step S2, the first coil 221, the second coil 231, and electrode pads and wiring for inputting drive signals to the first coil 221 and the second coil 231 are provided in device layer 12. In step S2, a mirror layer 3 is formed in the portion of surface 10a of wafer 10W corresponding to the first movable portion 22. The mirror layer 3 is formed, for example, by metal vapor deposition. In step S2, the patterned components used for removing the device layer 12 are removed from the wafer 10W by patterned component removal (details below).

[0078] Next, as Figure 4 As shown in (b), the back surface 10b of the wafer 10W is ground (step S3). The wafer 10W is thinned by grinding the back surface 10b. The ground back surface 10b of the wafer 10W is a surface that becomes part of the second surface 2b of the structure 2A.

[0079] Next, as Figure 5 As shown in (a), a patterned member 19 is patterned on the back side 10b of the wafer 10W (step S4). Specifically, the patterned member 19 is provided in the area of ​​the back side 10b corresponding to the substrate 21, and in the area excluding the area corresponding to the through-hole 21b. The patterned member 19 is, for example, a photoresist. Then, as shown in (a), a patterned member 19 is patterned on the back side 10b. Figure 5As shown in (b), a portion of the support layer 11 is removed from the wafer 10W via etching through the patterned member 19 (step S5). Specifically, the portion of the support layer 11 that is more inward than the portion corresponding to the base 21 and the portion corresponding to the through-hole 21b are removed. As a result, end faces 11a and 11b of the support layer 11 are formed. In step S5, a portion of the support layer 11 is removed from the wafer 10W such that the end faces 11a and 11b of the support layer 11 are coplanar with the end faces 12a and 12b of the device layer 12, respectively. The portion of the support layer 11 is removed, for example, by using reactive ion etching (DRIE) using a Bosch process. In addition, in step S5, when removing a portion of the support layer 11 from the wafer 10W, a protective film, such as a polymer, is used.

[0080] Next, as Figure 6 As shown, patterned component removal and protective film removal are performed (step S6). First, patterned component removal is performed. Patterned component removal is a step for removing (peeling off) the patterned component 19 from the back surface 10b of the wafer 10W. In patterned component removal, after a portion of the support layer 11 is removed from the wafer 10W, the patterned component 19 is removed according to a wet process. Specifically, first, multiple wafers 10W are placed within a box-shaped carrier 50.

[0081] On the inner wall surface of the carrier 50, a plurality of grooves (not shown) are formed at predetermined intervals along the Z-axis direction. The grooves extend along the XY plane. In the removal of the patterned component, multiple wafers 10W are arranged along the Z-axis direction (the thickness direction of the wafers 10W) ​​by embedding each wafer 10W into each groove. That is, other wafers 10W with the same structure as wafer 10W are arranged on one side and the other side of wafer 10W in the Z-axis direction. A second region R2 is formed between adjacent wafers 10W and other wafers 10W. Then, the patterned component 19 is removed while the patterned component removal liquid is present in the second region R2. Specifically, as described above, while multiple wafers 10W and other wafers 10W are placed in the carrier 50, the multiple wafers 10W and other wafers 10W are immersed in the patterned component removal liquid. The patterned component removal liquid is contained, for example, in a liquid pool. Multiple wafers 10W and other wafers 10W are immersed in the patterning component removal liquid in such a way that the orientation of the opening of the carrier 50 is the same as the orientation of the liquid surface of the patterning component removal liquid. The patterning component removal liquid is a solution or the like used to remove the patterned component 19 from the wafers 10W.

[0082] Next, while the multiple wafers 10W are immersed in the patterning component removal solution, they are reciprocated (oscillated) along the X-axis direction (the direction intersecting the thickness direction of the wafers 10W and the surface of the patterning component removal solution). The reciprocating motion of the multiple wafers 10W is achieved by reciprocating the carrier 50. During patterning component removal, the multiple wafers 10W are reciprocated at a second speed for a second time. "Reciprocating speed" refers to the number of reciprocating motions per unit time. The second speed is, for example, around 70 times per minute. The second time is, for example, around 40 minutes. The second time is the cumulative time during which the multiple wafers 10W reciprocate at the second speed. During patterning component removal, for example, the type of patterning component removal solution can be changed, or the reciprocating motion of the multiple wafers 10W can be temporarily stopped. During patterning component removal, after removing the patterning component 19 by a wet process, the multiple wafers 10W are immersed in water for a specified time, for example.

[0083] In the patterned component removal process, after the patterned component 19 is removed, that is, after immersing the wafer 10W in water for a predetermined time, a second spin drying process is performed to dry the wafer 10W. In the second spin drying, the wafer 10W is dried by rotating it at a second rotational speed for a fourth time. When the patterned component removal is performed, as follows... Figure 7 As shown in (a), the patterned component 19 is removed from the wafer 10W.

[0084] Next, protective film removal is performed. Protective film removal is a step used to remove the polymer, etc., used as a protective film in step S5 from the wafer 10W. In protective film removal, after a portion of the support layer 11 is removed from the wafer 10W, the protective film is removed using a wet process employing a protective film removal solution. The protective film removal solution is a liquid or similar agent used to remove the polymer, etc., from the wafer 10W.

[0085] Next, as Figure 7 As shown in (b), a portion of the intermediate layer 13 is removed from the wafer 10W by etching (step S7). Specifically, the portion of the intermediate layer 13 that is more inward than the portion corresponding to the base 21 and the portion corresponding to the through-hole 21b are removed. As a result, the first slit 22a and the second slit 23a are formed. At this time, the end face 13a of the intermediate layer 13 is formed. In step S7, by forming the first slit 22a and the second slit 23a on the wafer 10W in a manner that the first movable portion 22 and the second movable portion 23 are movable relative to the base 21, a plurality of portions 12WA corresponding to the structure 2A are formed on the wafer 10W, thus completing the plurality of portions 12WA. That is, the plurality of first movable portions 22 and the plurality of second movable portions 23 are released. "Release" means that, relative to the base, the first movable portion or the second movable portion is made movable from a fixed state.

[0086] In step S7, the first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively, to form the first slit 22a and the second slit 23a.

[0087] Furthermore, in step S7, as described above, by removing a portion of the intermediate layer 13 from the wafer 10W, a plurality of through-holes 21b, 22b, and 23b are formed in the portion of the wafer 10W other than the first slit 22a and the second slit 23a, penetrating the wafer 10W. Specifically, in step S7, through-holes 21b are formed in the portion of the wafer 10W corresponding to the base 21, through-holes 22b are formed in the portion corresponding to the first movable portion 22, and through-holes 23b are formed in the portion corresponding to the second movable portion 23. At this time, the end face 13b of the intermediate layer 13 is formed.

[0088] In step S7, etching is performed such that the end face 13a of the intermediate layer 13 is not recessed relative to either the end face 11a of the support layer 11 or the end face 12a of the device layer 12. In step S7, etching is performed such that the end face 13a of the intermediate layer 13 is coplanar with the end faces 11a of the support layer 11 and 12a of the device layer 12. Similarly, in step S7, etching is performed such that the end face 13b of the intermediate layer 13 is not recessed relative to either the end face 11b of the support layer 11 or the end face 12b of the device layer 12. In step S7, etching is performed such that the end face 13b of the intermediate layer 13 is coplanar with the end faces 11b of the support layer 11 and 12b of the device layer 12. In step S7, a portion of the intermediate layer 13 is removed from the wafer 10W by anisotropic etching. In step S7, a portion of the intermediate layer 13 is removed from the wafer 10W by dry etching.

[0089] Next, as Figure 8 As shown, wet cleaning is performed (step S8, third process). Wet cleaning is used to remove foreign matter and other contaminants adhering to the wafer 10W. In wet cleaning, the wafer 10W is cleaned with a cleaning solution (not shown). Specifically, firstly, multiple wafers 10W and multiple dummy wafers (control wafers) 20W are placed in a box-shaped carrier 60. The thickness of the dummy wafers 20W is, for example, about 625 μm.

[0090] On the inner wall surface of the carrier 60, a plurality of grooves (not shown) are formed at predetermined intervals along the Z-axis direction. The grooves extend along the XY plane. In wet cleaning, the plurality of wafers 10W and the plurality of auxiliary wafers 20W are alternately arranged along the Z-axis direction (the thickness direction of the wafers 10W and the auxiliary wafers 20W) by embedding each wafer 10W and each auxiliary wafer 20W into the respective grooves. That is, auxiliary wafers 20W are arranged on one side and the other side of the wafers 10W in the Z-axis direction. A first region R1 is formed between adjacent wafers 10W and auxiliary wafers 20W. The width of the first region R1 in the Z-axis direction is greater than the width of the second region R2 in the Z-axis direction.

[0091] Next, while the cleaning solution is present in the first region R1, the wafer 10W is cleaned. Specifically, as described above, with multiple wafers 10W and multiple complementary wafers 20W placed in the carrier 60, the multiple wafers 10W and multiple complementary wafers 20W are immersed in the cleaning solution. The cleaning solution is, for example, contained in a liquid pool. The multiple wafers 10W and multiple complementary wafers 20W are immersed in the cleaning solution with the opening of the carrier 60 facing the same direction as the surface of the cleaning solution. The cleaning solution is a liquid such as a chemical solution used to remove foreign matter from the wafers 10W. Next, while the multiple wafers 10W and multiple complementary wafers 20W are immersed in the cleaning solution, the multiple wafers 10W and multiple complementary wafers 20W are reciprocated (oscillated) along the X-axis direction (the direction intersecting the thickness direction of the wafer 10W and the surface of the cleaning solution). The reciprocating motion of multiple 10W wafers and multiple 20W co-wafers is implemented by reciprocating the carrier 60.

[0092] In the wet cleaning process, multiple wafers 10W and multiple auxiliary wafers 20W are reciprocated at a first speed for a first time. The load applied to the wafers 10W in the wet cleaning process of step S8 is less than the load applied to the wafers 10W in the patterning component removal process of step S6. That is, the intensity of the wet cleaning in step S8 is less than the intensity of the patterning component removal in step S6. Similarly, the load applied to the wafers 10W in the wet cleaning process of step S8 is less than the load applied to the wafers 10W in the protective film removal process of step S6. That is, the intensity of the wet cleaning in step S8 is less than the intensity of the protective film removal in step S6. "Load applied to the wafers" refers to the magnitude of the mechanical work (energy) applied to the wafers. For example, in the wet cleaning process of step S8, the greater the speed at which the wafers 10W reciprocate, the greater the load applied to the wafers 10W. Furthermore, for example, in the wet cleaning process of step S8, the longer the wafer 10W reciprocates, the greater the load applied to the wafer 10W.

[0093] The first speed is lower than the second speed. The first speed is, for example, around 40 times per minute. The first time is shorter than the second time. The first time is, for example, around 20 minutes. The first time is the cumulative time for the multiple wafers 10W and multiple complementary wafers 20W to reciprocate at the first speed. In wet cleaning, for example, the type of cleaning solution can be changed, or the reciprocating motion of the multiple wafers 10W and multiple complementary wafers 20W can be temporarily stopped. In wet cleaning, after cleaning the wafers 10W with the cleaning solution, the multiple wafers 10W and multiple complementary wafers 20W are, for example, immersed in water for a specified time.

[0094] In wet cleaning, after cleaning the wafer 10W, that is, after immersing the wafer 10W in water for a predetermined time, a first spin drying process is performed to dry the wafer 10W. In the first spin drying, the wafer 10W is rotated at a first rotational speed for a third time. The load applied to the wafer 10W in step S8 (first spin drying) is less than the load applied to the wafer 10W in step S6 (second spin drying). That is, the intensity of the first spin drying in step S8 is less than the intensity of the second spin drying in step S6. For example, in step S8 (first spin drying), the higher the rotational speed at which the wafer 10W is rotated, the greater the load applied to the wafer 10W. Furthermore, for example, in step S8 (first spin drying), the longer the time the wafer 10W is rotated, the greater the load applied to the wafer 10W. The first rotational speed is lower than the second rotational speed. The first rotational speed is, for example, around 200 rpm. The third time is, for example, around 5 minutes.

[0095] Next, as Figure 9 As shown in (a), a correction layer 4 is formed on the back surface 10b of the wafer 10W, opposite to the surface 10a where the mirror layer 3 is formed (step S9, fifth process). The correction layer 4 is formed on the surfaces of the support layer 11 and the device layer 12, respectively, opposite to the mirror layer 3. Next, as shown in (a), a correction layer 4 is formed on the back surface 10b of the wafer 10W, opposite to the surface 10a where the mirror layer 3 is formed. Figure 9 As shown in (b), each of the multiple portions 12WA is cut from the wafer 10W (step 10, fourth process). Thus, multiple mirror devices 1A are manufactured.

[0096] As explained above, in the manufacturing method of the mirror device 1A, in step S8 (third step), the wafer 10W, from which multiple first movable parts 22 and second movable parts 23 are removed, is cleaned with a cleaning solution. This removes foreign matter from the wafer 10W from which the multiple first movable parts 22 and second movable parts 23 are removed. However, when the wafer 10W from which the multiple first movable parts 22 and second movable parts 23 are removed is wet-cleaned in step S8, damage can easily occur to the multiple first movable parts 22 and second movable parts 23. Here, in step S7 (second step), through-holes 21b, 22b, and 23b are formed in the wafer 10W, respectively, in portions other than the first slit 22a and the second slit 23a, by etching. Therefore, in the wet cleaning step S8, the cleaning fluid can flow through the flow holes 21b, 22b, and 23b, and the wafer 10W, from which multiple first movable parts 22 and second movable parts 23 are cleaned and released. This reduces the load on the multiple first movable parts 22 and second movable parts 23 due to the cleaning fluid, and suppresses damage to these parts. Thus, according to the manufacturing method of the mirror device 1A, damage to the mirror device 1A and the retention of foreign matter can be suppressed. Furthermore, the cleaning fluid flows more easily between one side and the other side of the wafer 10W in the Z-axis direction via the flow holes 21b, 22b, and 23b. Therefore, the cleaning efficiency of the wet cleaning process is improved.

[0097] Furthermore, in the manufacturing method of the mirror device 1A, in step S2, a mirror layer 3 is formed on the portion of the wafer 10W corresponding to the first movable part 22. This allows foreign matter adhering to the mirror layer 3 to be removed by wet cleaning in step S8.

[0098] Furthermore, the manufacturing method of the mirror device 1A includes a step S9 between steps S8 and S10, in which a correction layer 4 is formed on the back surface 10b of the wafer 10W. This prevents foreign matter from being covered by the correction layer 4.

[0099] Furthermore, in the manufacturing method of the mirror device 1A, in step S6, after a portion of the support layer 11 is removed from the wafer 10W, a protective film removal process is performed to remove the protective film. After the protective film removal, multiple parts 12WA are completed. In the manufacturing method of the mirror device 1A, the protective film removal in step S6 is performed using a wet process. When removing a portion of the support layer 11 from the wafer 10W, a polymer or the like is used as the protective film, as described above. After removing a portion of the support layer 11 from the wafer 10W, sometimes the polymer remains on the wafer 10W. Furthermore, due to the wafer 10W becoming uneven due to the removal of a portion of the device layer 12 from the wafer 10W, and because a portion of the intermediate layer 13 is not removed from the wafer 10W, during the protective film removal process, sometimes the protective film removal solution remains on the surface of the mirror layer 3 formed on the wafer 10W. When this residual protective film removal solution dries, blemishes may occur. When polymers and blemishes remain on the wafer 10W, their presence can cause defects in the appearance of the mirror device 1A, potentially reducing the yield. According to the manufacturing method of the mirror device 1A, polymers (foreign matter) remaining on the wafer 10W can be removed by removing a protective film when a portion of the support layer 11 is removed from the wafer 10W. Furthermore, when removing the protective film, blemishes (foreign matter) remaining on the wafer 10W can be removed by wet cleaning in step S8. Therefore, the decrease in yield caused by defects in the appearance of the mirror device 1A can be suppressed.

[0100] Furthermore, in the manufacturing method of the mirror device 1A, in step S6, patterned member removal for removing the patterned member 19 is performed, and after the patterned member removal, multiple parts 12WA are completed. Thus, the patterned member 19 is removed before releasing the multiple first movable parts 22 and second movable parts 23, thereby suppressing damage to the mirror device 1A caused by the patterned member removal.

[0101] Furthermore, in the manufacturing method of the mirror device 1A, the patterned member 19 is removed using a wet process in step S6 during the removal of the patterned member. Therefore, the patterned member 19 is removed before the plurality of first movable parts 22 and second movable parts 23 are released, thus preventing damage to the mirror device 1A even if the patterned member 19 is removed by a wet process.

[0102] Furthermore, in the manufacturing method of the reflector device 1A, in step S7, a plurality of flow holes 22b and a plurality of flow holes 23b are formed in the portions corresponding to the first movable portion 22 and the second movable portion 23. Therefore, during the wet cleaning in step S8, since turbulence of the cleaning fluid is easily generated near the first movable portion 22 and the second movable portion 23, foreign matter can be reliably removed from the portions corresponding to the first movable portion 22 and the second movable portion 23. Furthermore, foreign matter can be reliably removed from the reflector layer 3.

[0103] Furthermore, in the manufacturing method of the mirror device 1A, in step S7, a flow-through hole 21b is formed at the portion corresponding to the base 21. This allows a larger amount of cleaning fluid to flow through the flow-through hole 21b in addition to the flow-through holes 22b and 23b during the wet cleaning process in step S8. Therefore, the load on the wafer 10W due to the cleaning fluid can be reduced more reliably, and damage to the wafer 10W can be suppressed more reliably. Furthermore, the cleaning efficiency of the wet cleaning process is reliably improved.

[0104] [Second Implementation]

[0105] like Figure 10 As shown, the main difference between the mirror device 1B of the second embodiment and the mirror device 1A of the first embodiment is that it has a beam portion 5 instead of a correction layer 4. The rest of the mirror device 1B is the same as the mirror device 1A, so detailed descriptions are omitted.

[0106] The structure 2B of the reflector device 1B includes multiple beam portions 5. Each beam portion 5 is formed by a support layer 11 and a portion of an intermediate layer 13. The beam portions 5 are located in the first movable portion 22. The beam portions 5 are located on the surface of the device layer 12 opposite to the reflector layer 3. The beam portions 5 extend linearly, for example, along the Y-axis. Multiple beam portions 5 are arranged at predetermined intervals along the X-axis. The multiple beam portions 5 can also be arranged radially, for example, when viewed from the Z-axis direction. The structure 2B may also include a single beam portion 5. In this case, the beam portion 5 may also be annular, for example, when viewed from the Z-axis direction. That is, the beam portion 5 may also be cylindrical. The beam portions 5 can also have various shapes. The beam portions 5 are provided to reinforce the structure 2B. In the beam portion 5, the end face 11c of the support layer 11 is formed in a manner that is not recessed relative to the end face 13c of the intermediate layer 13. The end face 11c of the support layer 11 and the end face 13c of the intermediate layer 13 are coplanar. When viewed from the Z-axis direction, the end face 11c of the support layer 11 and the end face 13c of the intermediate layer 13 are located further inside than the end face 22c of the first movable part 22 (the end face forming the flow hole 22b).

[0107] Next, the manufacturing method of the reflector device 1B will be described. The main difference between the manufacturing method of the reflector device 1B and the manufacturing method of the reflector device 1A in the first embodiment is that the beam portion 5 is formed in place of the correction layer 4. The rest of the manufacturing method of the reflector device 1B is the same as the manufacturing method of the reflector device 1A in the first embodiment, so detailed descriptions are omitted.

[0108] First, such as Figure 11 As shown, compared with step S1 of the first embodiment (refer to...) Figure 4 (a) Similarly, wafer 10W is prepared (step S21, first process). Next, similarly to the first embodiment, a portion of each of the support layer 11, device layer 12, and intermediate layer 13 is removed from wafer 10W by etching, thereby forming a first slit 22a and a second slit 23a on wafer 10W in such a way that the first movable portion 22 and the second movable portion 23 are movable relative to the base 21, and a plurality of portions 12WB corresponding to the structure 2B (see reference) are respectively Figure 15 (a) Formation on wafer 10W (second process). First, similar to step S2 of the first embodiment, a portion of the device layer 12 is removed from the wafer 10W by etching, and the first coil 221, the second coil 231, electrode pads, and wiring are disposed on the device layer 12, and the mirror layer 3 is formed on the surface 10a of the wafer 10W (step S22). Next, similar to step S3 of the first embodiment (see step S3 of the first embodiment) Figure 4 (b) Similarly, the back side 10b of wafer 10W is ground (step S23).

[0109] Next, as Figure 12 As shown in (a), the patterned member 29 is patterned on the back side 10b of the wafer 10W in the same manner as step S4 of the first embodiment (step S24). Next, as... Figure 12 As shown in (b), a portion of the support layer 11 is removed from the wafer 10W via etching through the patterned member 29 (step S25). In step S25, only a portion of the support layer 11 in the thickness direction is removed. The rest of step S25 is the same as step S5 in the first embodiment. Next, the process is similar to step S6 in the first embodiment (see...). Figure 6 Similarly, patterned component removal and protective film removal are performed (step S26). When performing patterned component removal, as... Figure 13 As shown in (a), the patterned component 29 is removed from the wafer 10W.

[0110] Next, as Figure 13As shown in (b), the patterned member 39 is patterned on the back side 10b of the wafer 10W (step S27). Specifically, the patterned member 39 is provided in the area of ​​the back side 10b corresponding to the base 21, and in the area other than the area corresponding to the through hole 21b, and in the area of ​​the back side 10b corresponding to the beam 5. Next, as shown in (b), Figure 14 As shown in (a), a portion of the support layer 11 is removed from the wafer 10W by etching via the patterned member 39 (step S28). Specifically, the portion of the support layer 11 that is further inward than the portion corresponding to the base 21, and the portion other than the portion corresponding to the beam portion 5, and the portion corresponding to the flow hole 21b are removed. As a result, the end face 11c of the support layer 11 is formed.

[0111] Next, the patterned component removal is performed again (step S29). When the patterned component removal is performed again, as... Figure 14 As shown in (b), the patterned component 39 is removed from wafer 10W. Then, as... Figure 15 As shown in (a), a portion of the intermediate layer 13 is removed from the wafer 10W by etching (step S30). Specifically, the portion of the intermediate layer 13 that is further inward than the portion corresponding to the base 21, and excluding the portion corresponding to the beam 5, and the portion corresponding to the through-hole 21b are removed. As a result, the end face 13c of the intermediate layer 13 is formed. In step S30, etching is performed in such a way that the end face 13c of the intermediate layer 13 is not recessed relative to the end face 11c of the support layer 11. In step S30, etching is performed in such a way that the end face 13c of the intermediate layer 13 and the end face 11c of the support layer 11 are coplanar. Next, the process is repeated with step S8 of the first embodiment (see step S8 of the first embodiment). Figure 8 Similarly, wet cleaning is performed (step S31, third process). Then, as... Figure 15 As shown in (b), each of the multiple portions 12WB is cut from the wafer 10W (step 32, fourth process). Thus, multiple mirror devices 1B are manufactured.

[0112] As explained above, the manufacturing method of the mirror device 1B, similar to the manufacturing method of the mirror device 1A in the first embodiment described above, can suppress the generation of damage to the mirror device 1B and the residue of foreign matter.

[0113] Furthermore, in the manufacturing method of the reflector device 1B, in step S30 (second step), etching is performed such that the end face 13c of the intermediate layer 13 is not recessed relative to the end face 11c of the support layer 11. Therefore, the beam portion 5 is less likely to peel off from the first movable portion 22. If the end face 13c of the intermediate layer 13 is recessed relative to the end face 11c of the support layer 11, the beam portion 5 will peel off from the first movable portion 22, and as a result, the structure 2B may be damaged. Here, since the beam portion 5 is less likely to peel off from the first movable portion 22, damage to the structure 2B is suppressed. After step S30, since wet cleaning is performed in step S31, it is particularly important that the beam portion 5 is less likely to peel off from the first movable portion 22.

[0114] [Third Implementation Method]

[0115] like Figure 16 As shown, the mirror device 1C of the third embodiment differs from the mirror device 1A of the first embodiment mainly in the following aspects: the flow hole 22b includes a first flow region 22d and a second flow region 22e; the flow hole 23b communicates with the first slit 22a; and a flow hole 25b is formed in the second connecting portion 25. Detailed descriptions of the parts of the mirror device 1C that are the same as those of the mirror device 1A are omitted.

[0116] Viewed from the Z-axis direction, the first movable part 22 of the structure 2C is, for example, an N-sided shape (N is a natural number of 4 or more). N is preferably a natural number of 5 or more. Viewed from the Z-axis direction, the first movable part 22 is, for example, an octagon. Viewed from the Z-axis direction, the first movable part 22 may also be, for example, circular. The second connecting part 25 is disposed on both sides of the second movable part 23 in the X-axis direction.

[0117] The flow hole 22b formed in the first movable portion 22 includes a first flow region 22d and a plurality of second flow regions 22e. Viewed from the Z-axis direction, the first flow region 22d extends along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, the first flow region 22d is, for example, annular. A plurality of connecting portions 26 are formed in the first movable portion 22, spanning the first flow region 22d. Thus, the first flow region 22d is divided into a plurality of regions arranged along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, each connecting portion 26 is arranged circumferentially in the first flow region 22d.

[0118] Viewed from the Z-axis direction, multiple second flow regions 22e are located outside the first flow region 22d. Viewed from the Z-axis direction, the multiple second flow regions 22e are arranged along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, each second flow region 22e is arranged along the outer edge (side of the octagon) of the first movable portion 22. Thus, the first flow region 22d and the second flow region 22e are adjacent to each other in a direction perpendicular to the Z-axis direction.

[0119] The direction perpendicular to the Z-axis refers to the direction along the path from the inside of the first flow area toward the outside of the first flow area when viewed from the Z-axis. The direction perpendicular to the Z-axis is the direction perpendicular to the outer edge of the first movable part 22 when viewed from the Z-axis. The direction perpendicular to the Z-axis is the radial direction of the first movable part 22 when viewed from the Z-axis. Hereinafter, the direction perpendicular to the Z-axis will be referred to as "radial".

[0120] Viewed from the Z-axis direction, the width of the second flow region 22e in the radial direction is smaller than the width of the first flow region 22d in the radial direction. The second flow region 22e may also include a portion whose radial width is smaller than the width of the first flow region 22d in the radial direction. In other words, the second flow region 22e may also include a portion whose radial width is greater than or equal to the width of the first flow region 22d in the radial direction.

[0121] A flow-through hole (flow-aid region) 23b formed in the second movable portion 23 communicates with the first slit 22a. Specifically, the flow-through hole 23b is formed by extending a portion of the first slit 22a in the X-axis direction to the opposite side of the first movable portion 22. When viewed from the Z-axis direction, the region formed by the first slit 22a and the flow-through hole 23b has, for example, a rectangular shape. Furthermore, in Figure 16 In the diagram, the boundary line between the flow hole 23b and the first slit 22a is indicated by a dashed line. A pair of flow holes 25b are formed in each of the second connecting portions 25. In each second connecting portion 25, the pair of flow holes 25b are arranged in the Y-axis direction. Each flow hole 25b penetrates the second connecting portion 25.

[0122] like Figure 16 and Figure 17As shown, the portion of the first movable part 22 inside the first flow area 22d constitutes the main body part 30. The portion of the first movable part 22 outside the first flow area 22d constitutes the annular part 40. In top view, the main body part 30 is circular, but it can also be formed into any shape such as ellipse, quadrilateral, or rhombus. In top view, the center of the main body part 30 coincides with the intersection of the first axis X1 and the second axis X2. The annular part 40 is formed in a ring shape, surrounding the main body part 30 in top view, separated by the first flow area 22d. For example, in top view, the annular part 40 has an octagonal outer edge and inner edge. Multiple connecting parts 26 connect the main body part 30 and the annular part 40 to each other.

[0123] The annular portion 40 has: a pair of first portions 41, a pair of second portions 42, and two pairs of third portions (inclined portions) 43. The pair of first portions 41 are located on both sides of the main body portion 30 in the X-axis direction. Each first portion 41 extends along the Y-axis direction. The pair of second portions 42 are located on both sides of the main body portion 30 in the Y-axis direction. Each second portion 42 extends along the X-axis direction. The two pairs of third portions 43 are located between the first portions 41 and the second portions 42, respectively, and are connected to the first portions 41 and the second portions 42. Each third portion 43 extends in a direction intersecting both the X-axis and Y-axis directions. Each third portion 43 obliquely intersects the center line (first axis X1) of the first connecting portion 24 and the second connecting portion 25.

[0124] Based on the structure where each third portion 43 extends in a direction intersecting the X-axis and Y-axis directions, compared to the case where the annular portion 40 is, for example, rectangular, each third portion 43 can be positioned closer to the first axis X1. Therefore, by concentrating the mass of the first movable portion 22 in a region close to the first axis X1, the moment of inertia of the first movable portion 22 about the first axis X1 can be reduced. In other words, when the first movable portion 22 is N-sided when viewed from the Z-axis direction, the larger N is, the more effectively the moment of inertia of the first movable portion 22 about the first axis X1 can be reduced by concentrating its mass in a region close to the first axis X1. This, in turn, reduces the driving power required to drive the first movable portion 22.

[0125] Each first portion 41 has a second flow region 22e formed therein. Each first portion 41 has a first frame portion 41a that is opposite to the main body portion 30 relative to the second flow region 22e, and a second frame portion 41b that is opposite to the first frame portion 41a relative to the second flow region 22e. The first frame portion 41a is the portion outside the second flow region 22e of the first movable portion 22. The second frame portion 41b is the portion between the first flow region 22d and the second flow region 22e of the first movable portion 22. The first frame portion 41a and the second frame portion 41b extend along the second flow region 22e. The radial width D1 of the first frame portion 41a is approximately the same as the radial width D2 of the second frame portion 41b.

[0126] In each first portion 41, the second flow region 22e is arranged in a manner that is axially symmetrical about the first axis X1. That is, in each first portion 41, the second flow region 22e is formed on the center line of the first connecting portion 24 and the second connecting portion 25 at a position adjacent to the first connecting portion 24. As a result, if stress is generated in the first connecting portion 24 or the second connecting portion 25, and this stress is transmitted to the first movable portion 22, a portion near the second flow region 22e of the first portion 41 undergoes local deformation. As a result, the transmission of this stress to the main body portion 30 of the first movable portion 22 is suppressed. Thus, deformation of the reflector layer 3, etc., can be suppressed.

[0127] In each second portion 42, a second flow region 22e is formed. Each second portion 42 has a first frame portion 42a opposite to the main body portion 30 relative to the second flow region 22e, and a second frame portion 42b opposite to the first frame portion 42a relative to the second flow region 22e. The first frame portion 42a is the portion outside the second flow region 22e of the first movable portion 22. The second frame portion 42b is the portion between the first flow region 22d and the second flow region 22e of the first movable portion 22. The first frame portion 42a and the second frame portion 42b extend along the second flow region 22e. The radial width D3 of the first frame portion 42a is greater than the radial width D4 of the second frame portion 42b. In each second portion 42, the second flow region 22e is formed at a position separate from the center line of the first connecting portion 24 and the second connecting portion 25.

[0128] Each of the second frame portions 42b functions as a stress-relieving region. Specifically, for example, when the first movable portion 22 is subjected to external stress, the second frame portion 42b undergoes local deformation, which, as a result, suppresses the transmission of stress to the main body portion 30 of the first movable portion 22. Thus, deformation of the mirror layer 3 can be suppressed.

[0129] Each second part 42 is connected to the main body 30 via a connecting portion 26. Specifically, the connecting portion 26 connects the second frame part 42b to the main body 30. In each second part 42, the connecting portion 26 spans the first flow region 22d radially (in the direction in which the first flow region 22d and the second flow region 22e are arranged). In each second part 42, the connecting portion 26 spans the portion of the first flow region 22d that overlaps with the second flow region 22e radially. The connecting portion 26 connecting the second part 42 to the main body 30 is formed on the first flow region 22d on the opposite side from the third part 43 and the first connecting portion 24.

[0130] In each second portion 42, the connecting portion 26 is radially adjacent to the second flow region 22e. That is, the connecting portion 26 is formed correspondingly to the second flow region 22e. In each second portion 42, the connecting portion 26 is connected to the second frame portion 42b at approximately the center of the second flow region 22e in the X-axis direction. As a result, the second frame portions 42b can be equally arranged on both sides of the connecting portion 26 in the X-axis direction. Therefore, stress transmission to the main body portion 30 of the first movable portion 22 can be effectively suppressed.

[0131] Each third portion 43 has a second flow region 22e. Each third portion 43 has a first frame portion 43a opposite to the main body portion 30 relative to the second flow region 22e, and a second frame portion 43b opposite to the first frame portion 43a relative to the second flow region 22e. The first frame portion 43a is the outer portion of the second flow region 22e of the first movable portion 22. The second frame portion 43b is the portion between the first flow region 22d and the second flow region 22e of the first movable portion 22. The first frame portion 43a and the second frame portion 43b extend along the second flow region 22e. The radial width D5 of the first frame portion 43a is greater than the radial width D6 of the second frame portion 43b.

[0132] Each of the second frame portions 43b functions as a stress-relieving region. Specifically, for example, when the first movable portion 22 is subjected to external stress, the second frame portion 43b undergoes local deformation, which, as a result, suppresses the transmission of stress to the main body portion 30 of the first movable portion 22. Thus, deformation of the mirror layer 3 can be suppressed.

[0133] Each third part 43 is connected to the main body 30 via a connecting portion 26. Specifically, the connecting portion 26 connects the second frame part 43b to the main body 30. In each third part 43, the connecting portion 26 spans the first flow region 22d radially (in the direction in which the first flow region 22d and the second flow region 22e are arranged). In each third part 43, the connecting portion 26 spans the portion of the first flow region 22d that overlaps with the second flow region 22e radially. The connecting portion 26 connecting the third part 43 to the main body 30 is formed in the first flow region 22d between the connecting portion 26 connecting the second part 42 to the main body 30 and the first connecting portion 24. The connecting portion 26 connecting the third part 43 to the main body 30 is formed in the portion of the first flow region 22d that overlaps with the third part 43.

[0134] In each third portion 43, the connecting portion 26 is radially adjacent to the second flow region 22e. That is, the connecting portion 26 is formed correspondingly to the second flow region 22e. In each third portion 43, the connecting portion 26 is connected to the second frame portion 43b at a position opposite to the first connecting portion 24 relative to the center line X3 of the second flow region 22e. In each third portion 43, the connecting portion 26 is radially formed in the portion of the first flow region 22d that overlaps with the second flow region 22e, on the opposite side of the first connecting portion 24. That is, in each third portion 43, the connecting portion 26 is connected to the second frame portion 43b at a position separate from the first connecting portion 24. As a result, in each third portion 43, the distance from one end of the second frame portion 43b on the side of the first connecting portion 24 (the end closest to the first connecting portion 24) to the connecting portion 26 becomes longer. That is, the area in the second frame portion 43b where the stress transmitted from the first connecting portion 24 is mitigated becomes longer. Therefore, stress transmitted from the first connecting portion 24 to the main body portion 30 of the first movable portion 22 via the connecting portion 26 is effectively suppressed. Thus, deformation of the mirror layer 3 can be effectively suppressed. Furthermore, the center line X3 is a radially extending line that is centered on the third portion 43 in the direction of extension through the second flow region 22e.

[0135] In the portion of the first flow area 22d that overlaps with the third portion 43, the connecting portion 26 may not be formed. Alternatively, the connecting portion 26 may be formed in the portion of the first flow area 22d that is closer to the first connecting portion 24 than the third portion 43.

[0136] When viewed from the Z-axis, the first movable part 22 is N-sided. The larger N is (e.g., when N is 8), the smaller the distance (along the outer edge of the first movable part 22) between the pair of connecting portions 26 that connect each second part 42 to the main body 30 and the first connecting portion 24, compared to when the first movable part 22 is rectangular. As a result, the stress transmitted from the first connecting portion 24 to the main body 30 via the pair of connecting portions 26 may increase. Therefore, it is preferable to suppress stress transmission to the main body 30 by providing not only the pair of connecting portions 26, but also, as described above, a connecting portion 26 between the connecting portion 26 and the first connecting portion 24. Furthermore, it is particularly preferable to provide a connecting portion 26 between the third part 43, which is different from the second part 42, and the main body 30. By connecting the second part 42 and the third part 43 to the main body 30 via the connecting portions 26, the stress transmitted from the first connecting portion 24 to the main body 30 can be further reduced. In this embodiment, as described above, a pair of second portions 42 and two pairs of third portions 43 are connected to the main body portion 30 via three pairs of connecting portions 26.

[0137] When viewed from the Z-axis direction, the first coil 221 of the reflector device 1C extends spirally outward (towards the outer edge of the first movable portion 22) beyond the first flow region 22d. Specifically, the first coil 221 is disposed in each first portion 41 between the first flow region 22d and the second flow region 22e (between the first flow region 22d and the second flow region 22e existing on the first axis X1), and in each second portion 42 and each third portion 43, it is disposed outward (between the second flow region 22e, which is correspondingly provided with the connecting portion 26, and the outer edge of the first movable portion 22). That is, the first coil 221 is disposed in each first portion 41 in the second frame portion 41b, and in each second portion 42 and each third portion 43 in the first frame portion 42a and the first frame portion 43a. The first coil 221 is, for example, a drive coil and / or a sensing coil.

[0138] When the first coil 221 is disposed in each of the first portions 41 and the second frame portions 41b, since there is a first frame portion 41a between the first connecting portion 24 and the first coil 221, stress transmission generated in the first connecting portion 24 or the second connecting portion 25 to the first coil 221 can be suppressed, for example. This prevents damage to the first coil 221. Furthermore, when the first coil 221 is disposed in each of the second portions 42 and the third portions 43 and the first frame portions 42a and 43a, the second frame portions 42b and 43b, which function as stress-relieving areas that are relatively easy to deform, can be avoided, thus preventing damage to the first coil 221. Moreover, when the first coil 221 is disposed in each of the second portions 42 and the third portions 43 and the first frame portions 42a and 43a, the radial widths D4 and D6 of the second frame portions 42b and 43b can be made sufficiently small, allowing the second frame portions 42b and 43b to fully function as stress-relieving areas.

[0139] Next, the manufacturing method of the reflector device 1C will be described. The manufacturing method of the reflector device 1C differs from the manufacturing method of the reflector device 1A in the following main aspects: forming a flow hole 22b including a first flow region 22d and a second flow region 22e; forming a flow hole 23b communicating with the first slit 22a; and forming a flow hole 25b in the second connecting portion 25. Detailed descriptions of the parts of the manufacturing method of the reflector device 1C that are the same as those of the manufacturing method of the reflector device 1A are omitted.

[0140] In the manufacturing method of the mirror device 1C, in a second step, portions of the device layer corresponding to the first slit 22a, the second slit 23a, the area of ​​the first flow region 22d excluding the connecting portion 26, the second flow region 22e, the flow hole 23b, and the flow hole 25b are removed. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, portions of the intermediate layer that are further inward than the portion corresponding to the base 21 are removed. As a result, the first slit 22a and the second slit 23a are formed, releasing a plurality of first movable portions 22 and a plurality of second movable portions 23.

[0141] Furthermore, in the manufacturing method of the mirror device 1C, in the second step, as described above, a portion of the intermediate layer 13 is removed from the wafer, thereby forming a plurality of through-holes 22b, 23b, and 25b in the wafer, excluding the first slit 22a and the second slit 23a. Specifically, in the manufacturing method of the mirror device 1C, in the second step, through-holes 22b are formed in the wafer at the portion corresponding to the first movable portion 22, through-holes 23b are formed at the portion corresponding to the second movable portion 23, and through-holes 25b are formed at the portion corresponding to the second connecting portion 25.

[0142] Specifically, in the manufacturing method of the mirror device 1C, in the second step, the flow hole 23b is formed such that it communicates with the first slit 22a. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, the flow hole 22b is formed in the portion corresponding to the first movable part 22 such that, when viewed from the Z-axis direction, it includes a first flow region 22d and a second flow region 22e that are radially adjacent to each other. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, the flow hole 22b is formed such that, when viewed from the Z-axis direction, a connecting portion 26 is formed radially across the first flow region 22d. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, the flow hole 22b is formed such that, when viewed from the Z-axis direction, it includes a portion in which the width of the radially second flow region 22e is smaller than the width of the radially first flow region 22d.

[0143] Furthermore, in the manufacturing method of the mirror device 1C, in the second step, a first slit 22a is formed such that the first movable part 22 is supported on the base 21 by the first connecting part 24. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, a second flow region 22e is formed such that, when viewed from the Z-axis direction, the second flow region 22e is adjacent to the first connecting part 24 in the radial direction. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, a second slit 23a is formed such that the second movable part 23 is supported on the base 21 by the second connecting part 25. Furthermore, in the manufacturing method of the mirror device 1C, in the second step, a flow hole 25b is formed in the portion corresponding to the second connecting part 25.

[0144] As explained above, the manufacturing method of the mirror device 1C, similar to the manufacturing method of the mirror device 1A in the first embodiment described above, can suppress the generation of damage to the mirror device 1C and the residue of foreign matter.

[0145] Furthermore, in the manufacturing method of the reflector device 1C, in step S7, a first slit 22a and a second slit 23a are formed such that the first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively, and a flow hole 25b is formed at the portion corresponding to the second connecting part 25. Therefore, during the wet cleaning in step S7, since turbulence of the cleaning fluid easily occurs near the second connecting part 25, the strength of the second connecting part 25 can be maintained, and foreign matter can be reliably removed from the portion corresponding to the second connecting part 25.

[0146] Furthermore, in the manufacturing method of the mirror device 1C, in step S7, the flow hole 23b is formed such that it communicates with the first slit 22a. Therefore, during the wet cleaning in step S7, a larger amount of cleaning fluid can flow through the flow hole 23b.

[0147] Furthermore, in the manufacturing method of the mirror device 1C, in step S7, the flow hole 22b is formed in the portion corresponding to the first movable part 22 such that, when viewed from the Z-axis direction, the flow hole 22b includes a first flow region 22d and a second flow region 22e that are radially adjacent to each other. Therefore, during the wet cleaning in step S8, since turbulence of the cleaning fluid easily occurs in the area adjacent to the first flow region 22d and the second flow region 22e, foreign matter can be reliably removed from the wafer 10W.

[0148] Furthermore, in the manufacturing method of the mirror device 1C, in step S7, a flow hole 22b is formed such that a connecting portion 26, extending radially upward across the first flow region 22d, is formed when viewed from the Z-axis direction. Therefore, during the wet cleaning in step S8, since the wafer 10W is reinforced by the connecting portion 26, damage to the wafer 10W can be suppressed. Furthermore, during the wet cleaning in step S8, since the cleaning fluid can flow through the second flow region 22e, the load on the connecting portion 26 due to the cleaning fluid can be reduced, and damage to the connecting portion 26 can be suppressed.

[0149] Furthermore, in the manufacturing method of the mirror device 1C, in step S7, a flow hole 22b is formed such that, when viewed from the Z-axis direction, the second flow region 22e includes a portion in the radial direction where the width of the second flow region 22e is smaller than the width of the first flow region 22d in the radial direction. Therefore, since the widths of the first flow region 22d and the second flow region 22e are different, turbulence of the cleaning fluid is more easily generated during the wet cleaning in step S8. Thus, foreign matter can be reliably removed from the wafer 10W.

[0150] Furthermore, in the manufacturing method of the reflector device 1C, in step S7, a first slit 22a and a second slit 23a are formed such that the first movable part 22 and the second movable part 23 are supported on the base 21 by the first connecting part 24 and the second connecting part 25, respectively. The second flow region 22e is formed such that, when viewed from the Z-axis direction, it is adjacent to the first connecting part 24 in the direction in which the first flow region 22d and the second flow region 22e are arranged. Therefore, during the wet cleaning in step S8, since the cleaning fluid can flow through the second flow region 22e, the load on the first connecting part 24 due to the cleaning fluid can be reduced, and damage to the first connecting part 24 can be suppressed.

[0151] [Fourth Implementation Method]

[0152] like Figure 18 As shown, the mirror device 1D of the fourth embodiment differs from the mirror device 1A of the first embodiment mainly in that the first movable part 22 has a flow hole 22f and the flow hole 23b communicates with the first slit 22a. Detailed descriptions of the parts of the mirror device 1D that are the same as those of the mirror device 1A are omitted.

[0153] A flow hole 22f is formed in the first movable portion 22 of the structure 2D. Viewed from the Z-axis direction, the flow hole 22f extends along the outer edge of the first movable portion 22. Viewed from the Z-axis direction, the flow hole 22f is, for example, annular. Multiple connecting portions 26 are formed across the flow hole 22f in the first movable portion 22. For example, four connecting portions 26 are formed in the first movable portion 22. Viewed from the Z-axis direction, each connecting portion 26 is formed at both ends of the first movable portion 22 in the Y-axis direction. Thus, the flow hole 22b is divided into multiple regions.

[0154] The portion of the first movable part 22 inside the flow hole 22f constitutes the main body part 30. The portion of the first movable part 22 outside the flow hole 22f constitutes the annular part 40. In top view, the main body part 30 is circular, but it can also be formed into any shape such as an ellipse, a quadrilateral, or a rhombus. In top view, the center of the main body part 30 coincides with the intersection of the first axis X1 and the second axis X2. The annular part 40 is formed in a ring shape, surrounding the main body part 30 through the flow hole 22f in top view. The annular part 40 has a hexagonal shape in top view, but it can also have any shape such as a circle, an ellipse, a quadrilateral, or a rhombus. The main body part 30 and the annular part 40 are connected to each other by multiple connecting parts 26.

[0155] The second movable part 23 of the reflector device 1D is formed in a frame shape and is disposed inside the base 21 to surround the first movable part 22. The second movable part 23 has: a pair of first connecting parts 41A, 41B; a pair of second connecting parts 42A, 42B; a pair of first straight parts 43A, 43B; a pair of second straight parts 44A, 44B; a pair of third straight parts 45A, 45B; and a pair of fourth straight parts 46A, 46B. The second movable part 23 has a shape that is symmetrical about each of the first axis X1 and the second axis X2 in a top view. In the following description, symmetry about the first axis X1 or the second axis X2 refers to symmetry in a top view.

[0156] The first connecting portions 41A and 41B are located on both sides of the first movable portion 22 in the X-axis direction. That is, each of the first connecting portions 41A and 41B has a portion that is opposite to the first movable portion 22 in the X-axis direction when viewed from above. Each of the first connecting portions 41A and 41B extends along the Y-axis direction.

[0157] The second connecting portions 42A and 42B are located on both sides of the first movable portion 22 in the Y-axis direction. That is, each of the second connecting portions 42A and 42B has a portion that is opposite to the first movable portion 22 in the Y-axis direction when viewed from above. Each of the second connecting portions 42A and 42B extends along the X-axis direction.

[0158] First straight sections 43A and 43B are located on both sides of the second connecting section 42A in the X-axis direction and are connected to the second connecting section 42A. Each first straight section 43A and 43B extends along the X-axis direction. The first straight sections 43A and 43B are arranged symmetrically about the Y-axis. Second straight sections 44A and 44B are located on both sides of the second connecting section 42B in the X-axis direction and are connected to the second connecting section 42B. Each second straight section 44A and 44B extends along the X-axis direction. The second straight sections 44A and 44B are arranged symmetrically about the Y-axis.

[0159] The third straight sections 45A and 45B are located on the opposite side from the first straight sections 43A and 43B and the second connecting section 42A, and are connected to the first straight sections 43A and 43B and the first connecting sections 41A and 41B. In top view, the third straight section 45A extends along directions inclined at 45 degrees relative to each of the X-axis and Y-axis. The third straight section 45B extends symmetrically about the Y-axis with respect to the third straight section 45A.

[0160] The fourth straight sections 46A and 46B are located on the opposite side from each of the second straight sections 44A and 44B and the second connecting section 42B, and are connected to the second straight sections 44A and 44B and the first connecting sections 41A and 41B. The fourth straight section 46A extends symmetrically about the X-axis with respect to the third straight section 45A. The fourth straight section 46B extends symmetrically about the Y-axis with respect to the fourth straight section 46A, and extends symmetrically about the X-axis with respect to the third straight section 45B.

[0161] Each first connecting portion 24 is connected to the second movable portion 23 at the first connecting portions 41A and 41B. In this embodiment, in order to alleviate the stress acting on the first connecting portion 24, the width (width in the Y-axis direction) of the end of each first connecting portion 24 on the side of the first movable portion 22 is wider as it gets closer to the first movable portion 22, and the width (width in the Y-axis direction) of the end of each first connecting portion 24 on the side of the second movable portion 23 is wider as it gets closer to the second movable portion 23.

[0162] Each second connecting portion 25 is connected to the second movable portion 23 via the second connecting portions 42A and 42B. Each second connecting portion 25 extends in a meandering manner in top view. Each second connecting portion 25 has multiple straight portions and multiple folded portions. The straight portions extend along the Y-axis direction and are arranged in a configuration along the X-axis direction. The folded portions alternately connect the two ends of adjacent straight portions.

[0163] A flow hole (flow auxiliary region) 23b formed in the second movable portion 23 communicates with the first slit 22a. The flow hole 23b includes four first portions 23c and two second portions 23d. Viewed from the Z-axis direction, each first portion 23c is arranged axially symmetrically about the first axis X1 and the second axis X2 on the outer side of the first movable portion 22. Each first portion 23c is formed by extending in the X-axis direction to the opposite side of the first movable portion 22 through a portion of the first slit 22a. Each second portion 23d is located on both sides of the first movable portion 22 in the Y-axis direction, between a pair of first portions 23c. Each second portion 23d is formed by extending in the Y-axis direction to the opposite side of the first movable portion 22 through a portion of the first slit 22a. Each second portion 23d communicates with each first slit 22a. Figure 18 In the diagram, the boundary line between the flow hole 23b and the first slit 22a is represented by a dashed line.

[0164] The reflector device 1D also includes a pair of coils 14 and 15. Each coil 14 and 15 is arranged in a spiral shape in the second movable part 23, surrounding the first movable part 22, and is viewed from above (from a direction orthogonal to the plane in which the coils 14 and 15 are arranged). Each coil 14 and 15 is arranged along a plane including the X and Y axes. Each coil 14 and 15 is wound multiple times around the first movable part 22. The pair of coils 14 and 15 are arranged in a staggered manner in the width direction of the second movable part 23 in a top view. No coils are provided in the first movable part 22.

[0165] Next, the manufacturing method of the reflector device 1D will be described. The manufacturing method of the reflector device 1D differs from the manufacturing method of the reflector device 1A in the following main aspects: a flow hole 22f is formed in the first movable part 22, and a flow hole 23b communicating with the first slit 22a is formed. Detailed descriptions of the parts of the manufacturing method of the reflector device 1D that are the same as those of the reflector device 1A are omitted.

[0166] In the manufacturing method of the mirror device 1D, in a second step, the portions of the device layer corresponding to the first slit 22a, the second slit 23a, the flow hole 22f, and the flow hole 23b are removed. Furthermore, in the manufacturing method of the mirror device 1D, in the second step, the portion of the intermediate layer that is further inward than the portion corresponding to the base 21 is removed. As a result, the first slit 22a and the second slit 23a are formed, releasing a plurality of first movable portions 22 and a plurality of second movable portions 23.

[0167] Furthermore, in the manufacturing method of the mirror device 1D, in the second step, as described above, a portion of the intermediate layer 13 is removed from the wafer, thereby forming a plurality of through-holes 22f and 23b in the wafer, excluding the first slit 22a and the second slit 23a. Specifically, in the manufacturing method of the mirror device 1D, in the second step, through-holes 22f are formed in the wafer corresponding to the first movable portion 22, and through-holes 23b are formed in the wafer corresponding to the second movable portion 23.

[0168] As explained above, the manufacturing method of the mirror device 1D, similar to the manufacturing method of the mirror device 1A in the first embodiment described above, can suppress the generation of damage to the mirror device 1D and the residue of foreign matter.

[0169] [Variation Example]

[0170] The above describes one embodiment of the present disclosure, but the present disclosure is not limited to the above embodiment.

[0171] In various embodiments, examples are shown where a portion of device layer 12, a portion of support layer 11, and a portion of intermediate layer 13 are sequentially removed from wafer 10W, but this is not a limitation. A portion of support layer 11, a portion of device layer 12, and a portion of intermediate layer 13 may also be removed from wafer 10W sequentially. In this case, patterned component removal and protective film removal are performed before removing a portion of intermediate layer 13 from wafer 10W. Alternatively, a portion of support layer 11, a portion of intermediate layer 13, and a portion of device layer 12 may be removed from wafer 10W sequentially. In this case, patterned component removal and protective film removal are performed before removing a portion of device layer 12 from wafer 10W. That is, in these cases, the first movable portion 22 and the second movable portion 23 can be released after patterned component removal and protective film removal.

[0172] Furthermore, in each embodiment, an example is shown where patterned components 19, 29, and 39 are removed from wafer 10W using a wet process during patterned component removal. Alternatively, patterned components 19, 29, and 39 can also be removed from wafer 10W using a dry process during patterned component removal. Similarly, in each embodiment, an example is shown where the protective film is removed using a wet process during protective film removal. Alternatively, the protective film can also be removed from wafer 10W using a dry process during protective film removal. In these cases, a portion of device layer 12, a portion of intermediate layer 13, and a portion of support layer 11 can be removed from wafer 10W sequentially. That is, in these cases, patterned component removal and protective film removal can be performed after releasing the first movable portion 22 and the second movable portion 23. Furthermore, in each embodiment, an example is shown where protective film removal is performed after patterned component removal. Alternatively, patterned component removal can be performed after protective film removal.

[0173] Furthermore, in the first embodiment, an example is shown where the first slit 22a, the second slit 23a, and the flow holes 21b, 22b, 23b are formed by removing the portion of the intermediate layer 13 that is more inward than the portion corresponding to the base 21 and the portion corresponding to the flow hole 21b. However, this is not a limitation. The order in which the first slit 22a, the second slit 23a, and the flow holes 21b, 22b, 23b are formed can also be arbitrary. For example, the flow holes 21b, 22b, 23b can be formed after the first slit 22a and the second slit 23a are formed, that is, after the first movable portion 22 and the second movable portion 23 are released. In this case, the portion of the wafer 10W corresponding to the first slit 22a and the second slit 23a can be removed first, and then the portion corresponding to the flow holes 21b, 22b, 23b can be removed. Alternatively, the first slit 22a and the second slit 23a can be formed after the flow holes 21b, 22b, 23b are formed. In this case, the portions of wafer 10W corresponding to vias 21b, 22b, and 23b can be removed first, and then the portions corresponding to the first slit 22a and the second slit 23a can be removed.

[0174] Furthermore, in the first embodiment, an example is shown where the correction layer 4 is formed for the back surface 10b of the wafer 10W, but the correction layer 4 can also be formed for the surface 10a of the wafer 10W. Specifically, the correction layer 4 can also be formed on the side of the device layer 12 opposite to the intermediate layer 13 at the base 21, the second movable portion 23, each of the first connecting portions 24, and each of the second connecting portions 25. The correction layer 4 can also be formed on the side of the device layer 12 opposite to the intermediate layer 13 at the first movable portion 22, and on the side of the mirror layer 3 opposite to the device layer 12. In addition, the correction layer 4 can be formed for both the surface 10a and the back surface 10b. That is, the correction layer 4 is formed for both the surface 10a and / or the back surface 10b.

[0175] In addition, it can also be like Figure 19As shown in (a), the width of each flow-through aperture 22b varies in the X-axis direction (the direction perpendicular to the thickness direction of the wafer 10W) ​​when viewed from the Z-axis direction. That is, when viewed from the Z-axis direction, the width of each flow-through aperture 22b in the X-axis direction may differ at different positions in the Y-axis direction. Specifically, the width of the central portion of each flow-through aperture 22b in the Y-axis direction may be greater than the width of its two ends in the Y-axis direction. Each flow-through aperture 22b may also include a curved portion in at least a portion when viewed from the Z-axis direction. Each flow-through aperture 22b may also have a different shape on one side and the other side in the X-axis direction when viewed from the Z-axis direction. Each flow-through aperture 22b may also be crescent-shaped, surrounding the mirror layer 3, when viewed from the Z-axis direction. In these cases, during the wet cleaning process in the third step, complex water flow is easily generated near each flow-through aperture 22b, thus improving the cleaning efficiency of the wet cleaning process.

[0176] In the second step of each embodiment, each flow-through hole 22b can be formed such that its width varies in the X-axis direction when viewed from the Z-axis direction. This makes it easier to generate turbulence in the cleaning fluid during the wet cleaning process in the third step, thus reliably removing foreign matter from the wafer 10W. In the second step of each embodiment, each flow-through hole 22b can also be formed such that at least a portion includes a bend. Since the load on the bend of the flow-through hole 22b due to the cleaning fluid is reduced during the wet cleaning process in step S8, damage to the mirror device 1A can be suppressed. In the second step of each embodiment, each flow-through hole 22b can also be formed such that one edge and the other edge have different shapes when viewed from the Z-axis direction. By forming larger flow-through holes 22b, a larger amount of cleaning fluid can flow through the flow-through holes 22b during the wet cleaning process in the third step. Therefore, foreign matter can be reliably removed from the wafer 10W. Alternatively, structures 2A, 2B, 2C, and 2D may not have a second movable part 23. In this case, when viewed from the Z-axis direction, the first movable part 22 is disposed inside the base 21 via a first slit 22a. Furthermore, each first connecting part 24 may be disposed on either side of the first movable part 22 in the Y-axis direction when viewed from the Z-axis direction.

[0177] In addition, it can also be like Figure 19As shown in (b), the flow-through hole 22b, when viewed from the Z-axis direction, is annular with the intersection of the first axis X1 and the second axis X2 as its center. In this case, a connecting portion 26 is formed across the flow-through hole 22b in the first movable portion 22. For example, four connecting portions 26 are formed in the first movable portion 22. When viewed from the Z-axis direction, each connecting portion 26 is arranged at the same interval in the circumferential direction of the flow-through hole 22b. Thus, the flow-through hole 22b is divided into multiple regions. When viewed from the Z-axis direction, the first movable portion 22 is point-symmetrical about the intersection of the first axis X1 and the second axis X2. In this case, the first movable portion 22 can be appropriately reinforced by each connecting portion 26, and the area occupied by the flow-through hole 22b in the first movable portion 22 can be increased. Therefore, in the wet cleaning process of the third step, a larger amount of cleaning fluid can flow through the flow-through hole 22b. Thus, foreign matter can be reliably removed from the wafer 10W. Furthermore, since the first movable part 22 is symmetrical, damage to the first movable part 22 can be suppressed during the wet cleaning process in the third step.

[0178] Furthermore, in the second step of each embodiment, the flow-through hole 22b may be formed by forming a connecting portion 26 across the flow-through hole 22b. In the second step of each embodiment, the flow-through hole other than the flow-through hole 22b may also be formed by forming a connecting portion across a flow-through hole other than the flow-through hole 22b (e.g., flow-through hole 23b). Therefore, during the wet cleaning process in the third step, since the wafer 10W is reinforced by the connecting portion 26, damage to the mirror device 1A can be suppressed. Additionally, the first movable portion 22 may also be circular when viewed from the Z-axis direction.

[0179] In addition, it can also be like Figure 19 As shown in (c), the pair of flow holes 22b are axially symmetrical about the first axis X1. Each flow hole 22b can also be crescent-shaped, surrounding the mirror layer 3, when viewed from the Z-axis direction. In this case, during the wet cleaning process in the third step, complex water flow is easily generated near each flow hole 22b, thus improving the cleaning efficiency of the wet cleaning process. In addition, the first movable part 22 can also be elliptical in shape, with its major axis extending along the Y-axis direction, when viewed from the Z-axis direction.

[0180] In addition, it can also be like Figure 20 As shown in (a), the flow hole 23b is not formed in the second movable part 23. Alternatively, it can be as follows: Figure 20 As shown in (b), no flow hole 22b is formed in the first movable part 22.

[0181] In addition, it can also be like Figure 21As shown, flow holes 22b and 23b are not formed. That is, flow hole 21b may only be formed at the base 21.

[0182] In addition, it can also be like Figure 22 As shown, a pair of flow holes 24b are formed on both sides of each first connecting portion 24 in the X-axis direction. Each flow hole 24b penetrates the base 21. Each flow hole 24b is located further inward than each first slit 22a in the X-axis direction. Alternatively, the flow holes 21b may not be formed in the base 21.

[0183] Furthermore, the flow holes 21b, 22b, 23b, 24b, and 25b may not be formed for the purpose of allowing the cleaning fluid to flow. The flow holes 21b, 22b, 23b, 24b, and 25b may also be simple through holes or through areas.

[0184] Furthermore, the following invention can be derived from the above embodiments.

[0185] Invention 1: An optical scanning device comprising: a base; a movable portion supported on the base; a connecting portion connected to the movable portion in a manner movable relative to the base; and a reflective layer disposed on the movable portion, wherein the movable portion has: a first through region that is annular and extends along the outer edge of the movable portion; a plurality of second through regions located further outward than the first through region; and a connecting portion that spans the first through region and overlaps with a portion of the second through region, wherein the width of the outer portion of the second through region of the movable portion is greater than the width of the portion between the first through region and the second through region of the movable portion.

[0186] Invention 2: The optical scanning device according to Invention 1, wherein the second through region is formed at a position on the center line of the connecting portion.

[0187] Invention 3: The optical scanning device according to Invention 1 or 2, wherein the connecting portion is formed in the portion of the first through region that overlaps with the second through region, on the opposite side to the connecting portion.

[0188] Invention 4: An optical scanning device according to any one of inventions 1 to 3, wherein the portion outside the first through region of the movable part includes an inclined portion that is oblique to the center line of the connecting part.

[0189] Invention 5: The optical scanning device according to any one of Inventions 1 to 4, wherein the movable part has an N-sided shape (N is a natural number of 5 or more).

[0190] Invention 6: An optical scanning device according to any one of inventions 1 to 5, wherein the portion outside the first through region of the movable part includes an inclined portion that is obliquely intersecting the center line of the connecting portion, the connecting portion is formed in the first through region on the opposite side of the inclined portion and the connecting portion, and the connecting portion is further formed in the first through region between the connecting portion and the connecting portion formed on the opposite side of the inclined portion and the connecting portion.

[0191] Invention 7: According to the optical scanning apparatus of Invention 6, the connecting portion formed in the first through region between the connecting portion and the connecting portion, which are formed on opposite sides of the inclined portion and the connecting portion, is formed in a portion that overlaps with the inclined portion of the first through region or a portion of the inclined portion of the first through region that is closer to the connecting portion side.

[0192] Invention 8: An optical scanning apparatus according to any one of inventions 1 to 7, further comprising a coil extending from the outer edge of the movable portion, the second through region being formed at a position on the center line of the connecting portion and at a position separate from the center line of the connecting portion, the coil being disposed between the second through region formed at the position on the center line of the connecting portion and the first through region, and between the second through region formed at the position separate from the center line of the connecting portion and the outer edge of the movable portion.

[0193] Explanation of reference numerals in the attached figures

[0194] 1A, 1B, 1C, 1D… Mirror device; 2A, 2B, 2C, 2D… Structure; 3… Mirror layer; 4… Correction layer; 10W… Wafer; 10a… Surface; 10b… Back side; 11… Support layer; 12… Device layer; 13… Intermediate layer; 11a, 11b, 11c, 12a, 12b, 13a, 13b, 13c… End face; 19… Patterned component; 21… Base; 22… First movable part; 22a… First slit; 23… Second movable part; 23a… Second slit; 21b, 22b, 22f, 23b, 24b, 25b… Flow hole; 22d… First flow area; 22e… Second flow area; 24… First connection part; 25… Second connection part; 26… Connecting part.

Claims

1. An optical scanning device, wherein, have: Base; A movable part supported on the base; A connecting part that is connected to the movable part in such a way that the movable part is movable relative to the base; as well as The reflector layer is provided in the movable part. The movable part includes: a main body part on which the reflective mirror layer is provided, and an annular part that surrounds the main body part and is connected to the connecting part when viewed from above, separated by a first through area. The movable portion includes: a first through region that is annular and extends along the outer edge of the movable portion; a second through region located further outward than the first through region in the direction from the main body portion toward the annular portion; and a connecting portion that crosses the first through region and overlaps with the second through region in the direction from the main body portion toward the annular portion. The width of the outer portion of the second through region of the movable part in the direction from the main body to the annular part is greater than the width of the portion between the first through region and the second through region of the movable part in the direction from the main body to the annular part. In the movable part, a third through region is formed that is located further outward than the first through region and is different from the second through region in the direction from the main body to the annular part, and no connection portion is formed in the portion of the first through region that overlaps with the third through region in the direction from the main body to the annular part.

2. The optical scanning device according to claim 1, wherein, The connecting part is connected to the movable part in such a way that the movable part can swing about a predetermined axis relative to the base. The second through area is formed in a position that does not overlap with the axis when viewed from above.

3. The optical scanning device according to claim 1 or 2, wherein, The connecting part is connected to the movable part in such a way that the movable part can swing about a predetermined axis relative to the base. The third through area is formed at a position that overlaps with the axis when viewed from above.

4. The optical scanning device according to any one of claims 1 to 3, wherein, The connecting portion is formed at a position offset from the center of the second through region in the portion of the first through region that overlaps with the second through region in the direction from the main body portion toward the annular portion.

5. The optical scanning apparatus according to claim 4, wherein, The connecting portion is formed on the opposite side of the connecting portion in the portion of the first through region that overlaps with the second through region in the direction from the main body to the annular portion.

6. The optical scanning apparatus according to any one of claims 1 to 3, wherein, The connecting portion is formed at the center of the second through region in the portion where the first through region overlaps with the second through region in the direction from the main body towards the annular portion.

7. The optical scanning apparatus according to any one of claims 1 to 6, wherein, The width of the end of the connecting part on the movable side increases as it approaches the movable part.

8. The optical scanning apparatus according to any one of claims 1 to 7, wherein, The length of the second through region along the outer edge of the movable part is greater than the length of the third through region along the outer edge of the movable part.

9. The optical scanning apparatus according to any one of claims 1 to 8, wherein, The length of the second through region along the outer edge of the movable part is greater than the minimum width in the direction perpendicular to the extension direction of the connecting part.

10. The optical scanning apparatus according to any one of claims 1 to 9, wherein, The outer portion of the second through region of the movable part has a width greater than the minimum width in the direction perpendicular to the extension direction of the connecting part in the direction from the main body to the annular part.

11. The optical scanning apparatus according to any one of claims 1 to 10, wherein, The portion between the first through area and the second through area of ​​the movable part has a width less than the minimum width in the direction perpendicular to the extension direction of the connecting part in the direction from the main body to the annular part.

12. The optical scanning apparatus according to any one of claims 1 to 11, wherein, The reflective layer is formed offset inward relative to the outer edge of the main body.

13. The optical scanning apparatus according to any one of claims 1 to 12, wherein, The width of the end of the connecting portion on the annular side increases as it approaches the annular portion.

14. The optical scanning apparatus according to any one of claims 1 to 13, wherein, The width of the end of the connector on the main body side increases as it approaches the main body.

15. The optical scanning apparatus according to any one of claims 1 to 14, wherein, The outer portion of the first through region of the movable part includes an inclined portion that obliquely intersects the centerline of the connecting part.

16. The optical scanning apparatus according to any one of claims 1 to 15, wherein, The movable part has an N-sided shape, where N is a natural number greater than or equal to 5.

17. The optical scanning apparatus according to any one of claims 1 to 16, wherein, The portion outside the first through region of the movable part includes an inclined portion that obliquely intersects the center line of the connecting portion. A connecting portion is formed in the first through region on the opposite side of the inclined portion and the connecting portion. A connecting portion is also formed in the first through region between the connecting portion and the connecting portion on the opposite side of the connecting portion relative to the inclined portion.

18. The optical scanning device according to claim 17, wherein, The connecting portion formed in the first through region between the connecting portion and the connecting portion on the opposite side of the inclined portion, is formed in the portion of the first through region that overlaps with the inclined portion or in the portion of the first through region that is closer to the connecting portion than the inclined portion.

19. The optical scanning apparatus according to any one of claims 1 to 18, wherein, It also includes a coil extending from the outer edge of the movable part. The second through region is formed at a position separate from the centerline of the connecting portion. The third through region is formed on the center line of the connecting part. The coil is disposed between the third through region and the first through region, and between the second through region and the outer edge of the movable part.

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