System and method for detecting cooling in a system

Abstract

The present disclosure relates to systems and methods for cooling in charged particle systems. The systems and methods may include a cooling platform mounted to a vacuum chamber configured to hold and cool a plurality of modules, and a controller; the controller is configured to monitor a temperature of the cooling platform; monitoring the temperature of the vacuum chamber or the temperature of the ambient environment; and adjusting the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the ambient environment. In some embodiments, a system may include a heat transfer device between a substrate of a wafer stage and an inner surface of a vacuum chamber, the heat transfer device including a deformation portion deformed by the inner surface of the substrate or the vacuum chamber and a cooling platform; and the cooling platform is arranged on the outer side, opposite to the substrate, of the vacuum chamber.

Description

Cross-references to related applications

[0001] This application claims priority to U.S. Patent Application 63 / 592,540, filed October 23, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This specification relates to the field of detection and charged particle systems, and more specifically, to systems for cooling in detection systems. Background Technology

[0003] In the manufacturing process of integrated circuits (ICs), incomplete or finished circuit components are inspected to ensure they are manufactured according to design and free of defects. Inspection systems using optical microscopes typically have a resolution as low as a few hundred nanometers; and this resolution is limited by the wavelength of light. As the physical size of IC components continues to shrink to below 100 nanometers or even below 10 nanometers, inspection systems with higher resolution than those using optical microscopes are needed.

[0004] Charged particle (e.g., electron) beam microscopy, with resolutions down to below 1 nanometer, such as scanning electron microscopy (SEM) or transmission electron microscopy (TEM), serves as a practical tool for inspecting IC components with feature sizes below 100 nanometers. Using SEM, electrons from a single primary electron beam or multiple primary electron beams can be focused onto a location of interest on the wafer being inspected. The primary electrons interact with the wafer and can be backscattered or cause the wafer to emit secondary electrons. The intensity of the electron beam, including both backscattered and secondary electrons, can vary based on the characteristics of the wafer's internal and external structures, and thus can indicate the presence of defects in the wafer. Summary of the Invention

[0005] Embodiments of this disclosure provide systems and methods for cooling charged particle systems. In some embodiments, the system, method, and non-transitory computer-readable medium may include: a wafer stage for holding a wafer in a vacuum chamber; a cooling platform mounted to the vacuum chamber and configured to hold and cool a plurality of modules; and a controller having one or more processors and configured to: monitor the temperature of the cooling platform; monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; and adjust the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment.

[0006] In some embodiments, the system, method, and non-transitory computer-readable medium may include: a wafer stage for holding a wafer in a vacuum chamber; a cooling platform mounted to the vacuum chamber and configured to hold a plurality of modules and transfer heat from the plurality of modules to the cooling platform; and a controller configured to regulate the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment, thereby regulating the heat transfer from the plurality of modules to the cooling platform.

[0007] In some embodiments, the system may include a wafer stage for holding a wafer in a vacuum chamber, the wafer stage including: a substrate; a heat transfer device between the substrate and an inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the substrate or the inner surface of the vacuum chamber; and a cooling platform located on an outer surface of the vacuum chamber directly opposite the substrate. Attached Figure Description

[0008] Figure 1 This is a schematic diagram illustrating an exemplary electron beam inspection (EBI) system consistent with embodiments of the present disclosure.

[0009] Figure 2A This is a schematic diagram illustrating an exemplary multi-beam system consistent with embodiments of the present disclosure. Figure 1 This is part of an exemplary charged particle beam inspection system.

[0010] Figure 2B This is a schematic diagram illustrating an exemplary multi-beam system consistent with embodiments of the present disclosure. Figure 1 This is part of an exemplary charged particle beam inspection system.

[0011] Figure 3 An exemplary charged particle system is shown.

[0012] Figure 4 An exemplary charged particle system consistent with embodiments of this disclosure is shown.

[0013] Figure 5 The embodiments shown are consistent with those of this disclosure. Figure 4 A top view of a system of charged particles.

[0014] Figure 6 An exemplary charged particle system is shown.

[0015] Figure 7 An exemplary charged particle system consistent with embodiments of this disclosure is shown.

[0016] Figure 8An exemplary process for cooling a charged particle system, consistent with embodiments of this disclosure, is shown. Detailed Implementation

[0017] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the drawings, wherein the same numbers in different figures denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of exemplary embodiments do not represent all implementations consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with aspects relevant to the subject matter set forth in the appended claims. For example, although some embodiments are described in the context of utilizing electron beams, this disclosure is not limited thereto. Other types of charged particle beams can also be applied similarly. Furthermore, other imaging systems, such as optical imaging, photoelectric detection, X-ray detection, extreme ultraviolet detection, deep ultraviolet detection, etc., can be used to generate corresponding types of images.

[0018] Electronic devices are made up of circuits formed on a piece of silicon called a substrate. Many circuits can be formed together on the same silicon wafer and are called integrated circuits or ICs. The size of these circuits has been reduced significantly, making it possible to mount more circuits on the substrate. For example, the IC chip in a smartphone can be as small as a thumbnail but can contain more than 2 billion transistors, each of which is less than one-thousandth the size of a human hair.

[0019] Manufacturing these tiny ICs is a complex, time-consuming, and expensive process, typically involving hundreds of individual steps. Even an error in one step can result in a defective IC that renders it unusable. Therefore, one goal of the manufacturing process is to avoid such defects in order to maximize the number of functional ICs produced in the process, i.e., to improve the overall yield of the process.

[0020] A key component of improving yield is monitoring the chip manufacturing process to ensure that a sufficient number of functional ICs are produced. One way to monitor this process is to inspect it at various stages of chip circuit structure formation. This can be done using scanning charged particle microscopy (SCPM), such as scanning electron microscopy (SEM). SEM is used to image these extremely small structures, essentially taking "photographs" of the wafer's structure. This image can be used to determine if the structure is formed correctly and also if it is formed in the correct location. If there are defects in the structure, the process can be adjusted to make it less likely to recur. Defects can arise at different stages of semiconductor processing. For these reasons, it is important to detect defects early, accurately, and effectively.

[0021] A spherical electron microscope (SEM) works similarly to a camera. A camera takes a picture by receiving and recording the brightness and color of light reflected or emitted from a person or object. A SEM takes a "picture" by receiving and recording the energy or quantity of electrons reflected or emitted from a structure. Before taking such a "picture," an electron beam can be projected onto the structure, and as electrons are reflected or emitted from the structure ("emission"), the SEM's detector can receive and record the energy or quantity of these electrons to generate an image. To take such "pictures," some SEMs use a single electron beam (called a "single-beam SEM"), while others use multiple electron beams (called a "multi-beam SEM") to take multiple "pictures" of the wafer structure. By using multiple electron beams, the SEM can project more electron beams onto the structure to obtain these multiple "pictures," resulting in more electrons being emitted from the structure. Therefore, the detector can receive more emitted electrons simultaneously and generate images of the wafer structure with greater efficiency and faster speed.

[0022] Existing charged particle systems lack active cooling solutions for the system chamber. In existing systems, modules at the top of the chamber (e.g., electronic modules) are cooled by natural convection (e.g., exposure to the surrounding environment). In existing systems, some critical components (e.g., SEMs and wafer stages) are sometimes cooled by water. Water cooling of the wafer stage requires delivering coolant into the main chamber within the deep vacuum environment.

[0023] In typical systems (for example, see...) Figure 3 As heat is transferred from the modules in the main chamber to the main chamber body, the temperature of the main chamber body rises significantly. Typical systems are limited. For example, the higher temperature in the main chamber negatively impacts system performance by hindering heat dissipation from modules directly connected to the main chamber. For instance, the higher temperature in the main chamber causes overheating of both the modules and the main chamber, negatively impacting high-precision metrology equipment connected to the main chamber and reducing the control accuracy of the wafer stage. The higher temperature in the main chamber leads to thermal expansion of the wafer and associated throughput loss due to image shift, as well as the generation and contamination of friction particles on the wafer backside.

[0024] Typical systems may use separate water cooling to cool components such as SEMs and wafer stages, requiring complex, high-capacity, and costly cooling loop designs. Furthermore, to achieve optimal module-level water cooling efficiency, coolant is delivered near heat sources, typically located within the main chamber in a deep vacuum environment. However, water cooling in deep vacuum environments carries a significant risk of outgassing and catastrophic consequences should a leak occur in the cooling loop within the sensitive vacuum of the main chamber.

[0025] Typical systems (e.g.) Figure 6Additional limitations exist. For example, heat transfer efficiency between the wafer stage and the main chamber is extremely low, partly due to the very small contact area between the bottom surfaces of the wafer stage and the main chamber. This extremely small contact area can lead to heat buildup and thermal drift in sensitive modules. As mentioned above, water cooling is also limited (e.g., leakage). Furthermore, increasing the contact area between the wafer stage and the main chamber increases the difficulty of leveling the wafer stage.

[0026] The disclosed embodiments address some or all of these disadvantages by providing a water-cooled armor (WCA) (e.g., a cooling platform) mounted on the vacuum chamber of the charged particle system. The WCA can maintain and cool the modules on the vacuum chamber by monitoring the temperature of the WCA, monitoring the temperature of the vacuum chamber, or the temperature of the surrounding environment, and adjusting the temperature of the WCA based on the temperature of the WCA, the temperature of the vacuum chamber, or the temperature of the surrounding environment.

[0027] Advantageously, the WCA of this disclosure can prevent overheating, thermal offset of the high-precision metrology equipment connected to the main chamber, thermal drift of the wafer stage and loss of control accuracy, thermal expansion of the wafer, and contamination on the back side of the wafer. Furthermore, since no separate water cooling is required, venting and leakage can be avoided.

[0028] Some embodiments of this disclosure may also include a heat transfer enhancer with a deformable component to meet the high precision requirements of the wafer stage. For example, when mounting the wafer stage, its height can be adjusted and calibrated during wafer stage leveling. Advantageously, the deformable component can improve the heat transfer efficiency between the wafer stage and the main chamber without negatively impacting wafer stage leveling.

[0029] The relative dimensions of the parts in the accompanying drawings may be exaggerated for clarity. In the following description of the drawings, the same or similar reference numerals refer to the same or similar parts or entities, and only the differences with respect to the various embodiments are described.

[0030] As used herein, unless otherwise specified, the term "or" includes all possible combinations unless impractical. For example, if a specified component may include A or B, then unless otherwise specified or impractical, the component may include A, or B, or A and B. As a second example, if a specified component may include A, B, or C, then unless otherwise specified or impractical, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0031] While not limiting the scope of this disclosure, some embodiments are described within the context of providing detectors and detection methods in systems utilizing electron beams. However, this disclosure is not limited thereto. Other types of charged particle beams can also be applied similarly. Furthermore, the systems and methods used for detection can be used in other imaging systems, such as optical imaging, photon detection, X-ray detection, ion detection, etc.

[0032] Figure 1 An exemplary electron beam inspection (EBI) system 100 consistent with embodiments of this disclosure is shown. The EBI system 100 can be used for imaging. Figure 1 As shown, the EBI system 100 includes a main chamber 101, a loading / locking chamber 102, an electron beam tool 104, and an equipment front-end module (EFEM) 106. The electron beam tool 104 is located within the main chamber 101. The EFEM 106 includes a first loading port 106a and a second loading port 106b. The EFEM 106 may include additional loading ports. The first loading port 106a and the second loading port 106b receive a wafer front-open unified container (FOUP) containing wafers (e.g., semiconductor wafers or wafers made of other (one or more) materials) or samples to be inspected (wafers and samples are interchangeable). A “batch” refers to multiple wafers that can be loaded as a batch for processing.

[0033] One or more robotic arms (not shown) in EFEM 106 can transport the wafer to loading / locking chamber 102. Loading / locking chamber 102 is connected to a loading / locking vacuum pump system (not shown), which removes bulk molecules from loading / locking chamber 102 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) can transport the wafer from loading / locking chamber 102 to main chamber 101. Main chamber 101 is connected to a main chamber vacuum pump system (not shown), which removes gas molecules from main chamber 101 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by electron beam tool 104. Electron beam tool 104 can be a single-beam system or a multi-beam system.

[0034] The controller 109 is electrically connected to the electron beam tool 104. The controller 109 can be a computer configured to implement various controls of the EBI system 100. Although Figure 1 The controller 109 shown is located outside the structure including the main chamber 101, the loading / locking chamber 102 and the EFEM 106, but it should be understood that the controller 109 may be part of the structure.

[0035] In some embodiments, controller 109 may include one or more processors (not shown). A processor may be a general-purpose or specialized electronic device capable of manipulating or processing information. For example, a processor may include any number of central processing units (or “CPUs”), graphics processing units (or “GPUs”), optical processors, programmable logic controllers, microcontrollers, microprocessors, digital signal processors, intellectual property (IP) cores, programmable controller arrays (PLAs), programmable array logic (PALs), general-purpose array logic (GALs), complex programmable logic devices (CPLDs), field-programmable gate arrays (FPGAs), system-on-a-chip (SoCs), application-specific integrated circuits (ASICs), and any combination of circuits capable of data processing. A processor may also be a virtual processor, comprising one or more processors distributed across multiple machines or devices coupled via a network.

[0036] In some embodiments, controller 109 may also include one or more memories (not shown). The memory can be a general-purpose or specific electronic device capable of storing processor-accessible code and data (e.g., via a bus). For example, the memory may include any number of random access memory (RAM), read-only memory (ROM), optical disc, magnetic disk, hard disk, solid-state drive, flash drive, secure digital card (SD card), memory stick, compact flash (CF) card, or any combination of any type of storage device. The code may include an operating system (OS) and one or more applications (or “apps”) for a specific task. The memory may also be virtual memory comprising one or more memories distributed across multiple machines or devices coupled via a network.

[0037] Embodiments of this disclosure can provide a single-charged particle beam imaging system (“single-beam system”). Compared to a single-beam system, a multi-charged particle beam imaging system (“multi-beam system”) can be designed to optimize throughput for different scanning modes. Embodiments of this disclosure provide a multi-beam system that can optimize throughput for different scanning modes by using beam arrays with different geometries and adapting to different throughput and resolution requirements.

[0038] Now for reference Figure 2A , Figure 2A This is a schematic diagram illustrating an exemplary electron beam tool 104 consistent with embodiments of the present disclosure, the electron beam tool comprising as... Figure 1 The electron beam tool 104 is a multi-beam detection tool that is part of the EBI system 100. In some embodiments, the electron beam tool 104 can serve as a multi-beam detection tool that is part of the EBI system 100. Figure 1The EBI system 100 is operated by a single-beam inspection tool. The multi-beam electron beam tool 104 (also referred to herein as apparatus 104) includes an electron source 201, a coulomb aperture plate (or “gun aperture plate”) 271, a focusing lens 210, a source conversion unit 220, a primary projection system 230, a motorized stage 209, and a sample holder 207 supported by the motorized stage 209 for holding the sample 208 to be inspected (e.g., a wafer or photomask). The multi-beam electron beam tool 104 may also include a secondary projection system 250 and an electron inspection device 240. The primary projection system 230 may include an objective lens 231. The electron inspection device 240 may include multiple inspection elements 241, 242, and 243. A beam splitter 233 and a deflection scanning unit 232 may be located within the primary projection system 230.

[0039] The electron source 201, coulomb aperture plate 271, focusing lens 210, source conversion unit 220, beam splitter 233, deflection scanning unit 232, and primary projection system 230 can be aligned with the main optical axis 204 of the device 104. The secondary projection system 250 and electronic detection device 240 can be aligned with the secondary optical axis 251 of the device 104.

[0040] The electron source 201 may include a cathode (not shown) and an extractor or anode (not shown), wherein, during operation, the electron source 201 is configured to emit primary electrons from the cathode, and the primary electrons are extracted or accelerated by the extractor and / or the anode to form a primary electron beam 202, which forms a primary beam crossover point (virtual or real) 203. The primary electron beam 202 can be considered to be emitted from the primary beam crossover point 203.

[0041] Source conversion unit 220 may include an image forming element array (not shown), an aberration compensator array (not shown), a beam confinement aperture array (not shown), and a pre-bent micro-deflector array (not shown). In some embodiments, the pre-bent micro-deflector array deflects multiple primary beam waves 211, 212, 213 of the primary electron beam 202 to orthogonally enter the beam confinement aperture array, the image forming element array, and the aberration compensator array. In some embodiments, device 104 may operate as a single-beam system, thereby generating a single primary beam wave. In some embodiments, focusing lens 210 is designed to focus the primary electron beam 202 into a parallel beam and orthogonally incident on source conversion unit 220. The image forming element array may include multiple micro-deflectors or microlenses to influence the multiple primary beam waves 211, 212, 213 of the primary electron beam 202 and form multiple parallel images (virtual or real) of the primary beam intersection 203, each of the primary beam waves 211, 212, and 213 corresponding to one parallel image. In some embodiments, the aberration compensator array may include a field curvature compensator array (not shown) and an astigmatism compensator array (not shown). The field curvature compensator array may include a plurality of microlenses to compensate for field curvature aberrations of primary beams 211, 212, and 213. The astigmatism compensator array may include a plurality of micro-astigmatism correctors to compensate for astigmatic aberrations of primary beams 211, 212, and 213. The beam-limiting aperture array may be configured to limit the diameter of each primary beam 211, 212, and 213. Figure 2A Three primary beams 211, 212, and 213 are shown as examples, and it should be understood that the source conversion unit 220 can be configured to form any number of primary beams. The controller 109 can be connected to... Figure 1 Various components of the EBI system 100, such as the source conversion unit 220, the electronic detection device 240, the primary projection system 230, or the motorized stage 209. In some embodiments, as further described in detail below, the controller 109 can perform various image and signal processing functions. The controller 109 can also generate various control signals to manage the operation of the charged particle beam detection system.

[0042] A focusing lens 210 is configured to focus the primary electron beam 202. The focusing lens 210 can be further configured to adjust the current of the primary beams 211, 212, and 213 downstream of the source conversion unit 220 by changing the focusing capability of the focusing lens 210. Alternatively, the current can be changed by changing the radial dimension of the beam-limiting aperture within the beam-limiting aperture array corresponding to each primary beam. The current can be changed by changing both the radial dimension of the beam-limiting aperture and the focusing capability of the focusing lens 210. The focusing lens 210 can be an adjustable focusing lens, which can be configured such that the position of its first principal plane is movable. The adjustable focusing lens can be configured to be magnetic, which can cause the off-axis beams 212 and 213 to irradiate the source conversion unit 220 with a rotation angle. The rotation angle varies with the focusing capability of the adjustable focusing lens or the position of the first principal plane. The focusing lens 210 may be an anti-rotation focusing lens, which may be configured to maintain a constant rotation angle when the focusing capability of the focusing lens 210 changes. In some embodiments, the focusing lens 210 may be an adjustable anti-rotation focusing lens, wherein the rotation angle remains constant when its focusing capability and the position of its first principal plane change.

[0043] Objective lens 231 can be configured to focus beams 211, 212, and 213 onto sample 208 for inspection, and in the current embodiment, can form three probe spots 221, 222, and 223 on the surface of sample 208. Coulomb aperture plate 271 is configured in operation to block peripheral electrons of the primary electron beam 202 to reduce the Coulomb effect. The Coulomb effect can increase the size of each probe spot 221, 222, and 223 of the primary beams 211, 212, and 213, thereby reducing detection resolution.

[0044] Beam splitter 233 can be, for example, a Wien filter, which includes generating electrostatic dipole fields and magnetic dipole fields ( Figure 2A An electrostatic deflector (not shown). In operation, beam splitter 233 can be configured to apply an electrostatic force to the individual electrons of primary beams 211, 212, and 213 via an electrostatic dipole field. The electrostatic force is equal in magnitude to the magnetic force applied to the individual electrons by the magnetic dipole field of beam splitter 233, but opposite in direction. Therefore, primary beams 211, 212, and 213 can pass through beam splitter 233 at least substantially straight with a deflection angle of at least substantially zero.

[0045] Deflection scanning unit 232 is configured in operation to deflect primary beams 211, 212, and 213 to scan probe spots 221, 222, and 223 across individual scanning regions in segments on the surface of sample 208. In response to primary beams 211, 212, and 213 or probe spots 221, 222, and 223 incident on sample 208, electrons emerge from sample 208 and generate three secondary electron beams 261, 262, and 263. Each of the secondary electron beams 261, 262, and 263 typically comprises secondary electrons (electron energy ≤ 50 eV) and backscattered electrons (electron energy between 50 eV and the landing energy of primary beams 211, 212, and 213). Beam splitter 233 is configured to deflect the secondary electron beams 261, 262, and 263 toward secondary projection system 250. The secondary projection system 250 then focuses secondary electron beams 261, 262, and 263 onto the detection elements 241, 242, and 243 of the electron detection device 240. The detection elements 241, 242, and 243 are arranged to detect the corresponding secondary electron beams 261, 262, and 263 and generate corresponding signals, which are sent to the controller 109 or a signal processing system (not shown), for example, to construct an image of the corresponding scanned area of ​​the sample 208.

[0046] In some embodiments, detection elements 241, 242, and 243 detect corresponding secondary electron beams 261, 262, and 263, respectively, and generate corresponding intensity signal outputs (not shown) to an image processing system (e.g., controller 109). In some embodiments, each detection element 241, 242, and 243 may include one or more pixels. The intensity signal output of a detection element may be the sum of signals generated by all pixels within that detection element.

[0047] In some embodiments, controller 109 may include an image processing system comprising an image acquisition device (not shown) and a memory (not shown). The image acquisition device may include one or more processors. For example, the image acquisition device may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. The image acquisition device may be communicatively coupled to the electronic inspection device 240 of device 104 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, Internet, wireless network, wireless radio, or a combination thereof. In some embodiments, the image acquisition device may receive signals from the electronic inspection device 240 and may construct an image. Thus, the image acquisition device may acquire an image of sample 208. The image acquisition device may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquisition device may be configured to perform adjustments such as brightness and contrast on the acquired image. In some embodiments, the storage device may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), other types of computer-readable storage, etc. The storage device may be coupled to the image acquisition device and may be used to save scanned raw image data as raw images and post-processed images.

[0048] In some embodiments, the image acquisition device may acquire one or more images of the sample based on imaging signals received from the electronic detection device 240. The imaging signals may correspond to a scanning operation for imaging charged particles. The acquired images may be a single image comprising multiple imaging regions. The single image may be stored in a storage device. The single image may be a raw image that can be divided into multiple regions. Each region may include an imaging region containing features of the sample 208. The acquired images may include multiple images of a single imaging region of the sample 208 sampled multiple times over a time series. The multiple images may be stored in a storage device. In some embodiments, the controller 109 may be configured to perform image processing steps on multiple images of the same location of the sample 208.

[0049] In some embodiments, controller 109 may include measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. Electron distribution data collected during the detection time window, combined with corresponding scan path data for each of the beams 211, 212, and 213 incident on the wafer surface, can be used to reconstruct an image of the wafer structure under inspection. The reconstructed image can be used to reveal various features of the internal or external structure of sample 208, and therefore can be used to reveal any defects that may exist in the wafer.

[0050] In some embodiments, the controller 109 may control the motorized stage 209 to move the sample 208 during the examination of the sample 208. In some embodiments, the controller 109 may cause the motorized stage 209 to move the sample 208 continuously in one direction at a constant speed. In other embodiments, the controller 109 may cause the motorized stage 209 to change the speed of movement of the sample 208 over time according to the steps of the scanning process.

[0051] although Figure 2A The apparatus 104 is shown using three primary electron beams, but it should be understood that the apparatus 104 may use one, two, or more primary electron beams. This disclosure does not limit the number of primary electron beams used in the apparatus 104. In some embodiments, the apparatus 104 may be a SEM for photolithography. In some embodiments, the electron beam tool 104 may be a single-beam system or a multi-beam system.

[0052] For example, such as Figure 2B As shown, the electron beam tool 100B (also referred to herein as apparatus 100B) consistent with embodiments of this disclosure can be a single-beam inspection tool for use in EBI system 10. Apparatus 100B includes a wafer holder 136 supported by a motorized stage 134 to hold a wafer 150 to be inspected. Electron beam tool 100B includes an electron emitter that may include a cathode 103, an anode 121, and a gun aperture 122. Electron beam tool 100B also includes a beam confinement aperture 125, a focusing lens 126, a column aperture 135, an objective lens assembly 132, and a detector 144. In some embodiments, objective lens assembly 132 may be a modified SORIL lens that includes a pole piece 132a, a control electrode 132b, a deflector 132c, and an excitation coil 132d. During imaging, an electron beam 161 emitted from the top of cathode 103 can be accelerated by the voltage of anode 121, pass through gun aperture 122, beam-limiting aperture 125, and focusing lens 126, and is focused into probe spot 170 by a modified SORIL lens before impacting the surface of wafer 150. Probe spot 170 can be scanned across the surface of wafer 150 by deflectors (such as deflector 132c or other deflectors in the SORIL lens). Detector 144 can collect secondary particles or scattered primary particles, such as secondary electrons or scattered primary electrons, emitted from the wafer surface to determine the beam intensity and enable the reconstruction of an image of the region of interest on wafer 150.

[0053] An image processing system 199 may also be provided, comprising an image acquisition unit 120, a storage device 130, and a controller 109. The image acquisition unit 120 may include one or more processors. For example, the image acquisition unit 120 may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. The image acquisition unit 120 may be connected to the detector 144 of the electron beam tool 100B via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, the Internet, wireless network, wireless radio, or a combination thereof. The image acquisition unit 120 may receive signals from the detector 144 and may construct an image. Therefore, the image acquisition unit 120 may acquire images of the wafer 150. The image acquisition unit 120 may also perform various post-processing functions, such as generating contours and overlaying indicators onto the acquired images. The image acquisition unit 120 may be configured to perform adjustments such as brightness and contrast of the acquired images. The storage device 130 may be a storage medium such as a hard disk, random access memory (RAM), cloud storage device, or other types of computer-readable storage. Storage device 130 may be coupled to image acquisition device 120 and may be used to save scanned raw image data as raw images and post-processed images. Image acquisition device 120 and storage device 130 may be connected to controller 109. In some embodiments, image acquisition device 120, storage device 130 and controller 109 may be integrated together as an electronic control unit.

[0054] In some embodiments, the image acquisition unit 120 may acquire one or more images of a sample based on imaging signals received from the detector 144. The imaging signals may correspond to scanning operations used for imaging charged particles. The acquired image may be a single image comprising multiple imaging regions, and may contain various features of the wafer 150. The single image may be stored in the storage device 130. Imaging may be performed based on imaging frames.

[0055] The focusing and illumination optics of electron beam tools may include or be supplemented with electromagnetic quadrupole electron lenses. For example, such as Figure 2B As shown, the electron beam tool 100B may include a first quadrupole lens 148 and a second quadrupole lens 158. In some embodiments, the quadrupole lenses are used to control the electron beam. For example, the first quadrupole lens 148 may be controlled to adjust the beam current, and the second quadrupole lens 158 may be controlled to adjust the beam spot size and beam shape.

[0056] Figure 2B A charged particle beam device is shown, wherein the detection system can use a single primary beam configured to generate secondary electrons by interacting with a wafer 150. A detector 144 can be positioned along an optical axis 105, as shown... Figure 2BAs shown in the embodiment, the primary electron beam can be configured to travel along the optical axis 105. Therefore, the detector 144 can include a hole at its center, allowing the primary electron beam to pass through to reach the wafer 150.

[0057] Figure 3 An exemplary charged particle system 300 is shown. (As...) Figure 3 As shown in Figure 310, in a typical system, the temperature of the main chamber (e.g., main chamber 320) is significantly increased because heat is transferred from the modules on the chamber (e.g., electronic module 330) to the main chamber. For example, the temperature of the ambient environment 340 may be lower than the temperature of the main chamber 320 (e.g., the ambient temperature may be 21°C, while the temperature of the main chamber may be 23°C to 25°C).

[0058] Typical systems are subject to limitations. For example, the higher temperature of the main chamber 320 negatively impacts system performance by hindering heat dissipation from modules directly connected to the main chamber 320. For instance, the higher temperature of the main chamber 320 can cause localized hotspots, posing a risk of overheating of the electronic module 320 and the main chamber 320. This can lead to thermal drift of high-precision metrology equipment connected to the main chamber 320 (e.g., causing misalignment of the SEM, laser positioning equipment, and reference mirror, which are critical for positioning the wafer stage 322), and thermal drift and loss of control accuracy of the wafer stage 322 itself due to heat transfer from the main chamber 320 to the wafer stage 322 (when the temperature of the main chamber 320 is higher than that of the wafer stage 322) and heat buildup caused by obstructed heat transfer paths (when the temperature of the wafer stage 322 is higher than that of the main chamber 320). The higher temperature in the main chamber 320 also causes thermal expansion of the wafer 324 (e.g., due to heat transferred from the wafer stage 322) and associated throughput loss of image offset, as well as friction particle generation and contamination on the back side of the wafer 324 (e.g., particles generated when the wafer 324 comes into contact with the wafer stage 322 in the case of expansion).

[0059] Because the main chamber 320 serves as a general "heat sink" for all modules connected to the main chamber 320 and for all modules enclosed within the main chamber 320 (e.g., wafer 324 and wafer stage 322 in the vacuum environment of the main chamber 320), a typical system suffers the negative consequences of a heat sink.

[0060] Typical systems may use separate water coolers 342 or 344 to cool components such as the SEM 346 and wafer stage 322, requiring complex cooling circuit designs with high capacity and significant investment. Furthermore, to achieve optimal module-level water cooling efficiency, coolant is delivered near heat sources (e.g., the coils of the SEM 346, the motors of the wafer stage 322, etc.), which are typically located within the main chamber 320 in a deep vacuum environment. However, water cooling in a deep vacuum environment is disadvantageous because if a leak occurs in the cooling circuit within the sensitive vacuum environment of the main chamber 320, there is a high risk of outgassing (air trapped in the coolant may slowly leak into the vacuum environment, creating a virtual leak point) and catastrophic consequences.

[0061] Figure 4 An exemplary charged particle system 400 consistent with embodiments of this disclosure is shown (e.g., Figure 1 EBI system 100, Figure 2A Electron beam tool 104 Figure 2B Electron beam tool 100B, Figure 7 Charged particle system 700, etc.

[0062] In some embodiments, the charged particle system 400 may include water-cooled armor (WCA) 452 and 454 for cooling the main chamber 420. Although Figure 4 Two WCAs, 452 and 454, are shown, but it should be understood that any number of WCAs (e.g., ) can be used in the charged particle system 400. Figure 5 (WCA 552, WCA 554, WCA 556, etc.). Although WCA 452 and WCA 454 can be described as separate WCA components, it should be understood that WCA 452 and WCA 454 can represent any number of WCAs, including providing a single continuous WCA covering multiple surfaces of the charged particle system 400.

[0063] WCA 452 and WCA 454 can be stacked or thermally mounted in the main compartment 420 (e.g., Figure 1 Main Room 101 Figure 7 The cold plate on top of the main chamber 720 (e.g., a metal plate with long, annular, narrow liquid channels embedded for cooling water flow, the metal plate having very high heat transfer efficiency, or a thermoelectric cooler (Peltier pad) with one side attached to a radiator and fan for proper heat transfer and dissipation) (e.g., the WCA may directly contact the outer surface of the main chamber 420). For example, WCA 452 may be located below the electronic module 430, and WCA 452 and WCA 454 may be located around the SEM 446. In some embodiments, the WCA may directly contact the electronic module 430 or the SEM 446 (e.g., Figures 1 to 2A Electron beam tool 104 Figure 2B (electron beam tool 100B, etc.). In some embodiments, the WCA may be adjacent to the SEM 446.

[0064] Coolant (e.g., water or coolant) can be cooled by a cooler or facility (e.g., Figure 5 A facility cooling water 560 (e.g., process cooling water) is provided, which can travel through the cooling channels of WCA 452 and WCA 454 to remove heat transferred from the main chamber 420 and modules attached to the main chamber 420 (e.g., electronic module 430, SEM 446, etc.).

[0065] In some embodiments, each of WCA 452 and WCA 454 may include mounting holes (e.g., Figure 5 Mounting holes 570 are provided to mount WCA 452 and 454 to the main chamber 420 and to provide mounting locations for modules (e.g., electronic module 430, etc.) such that electronic module 430 is not directly attached to the main chamber 420. As a safety measure, leak-proof trays may be included near the cooling flow inlets or outlets facing WCA 452 and WCA 454 to collect any leaks.

[0066] In some embodiments, the setpoint temperature for the cooling control of WCA 452 and WCA 454 may be similar to the temperature of ambient 440. In some embodiments, the temperature of ambient 440 may be measured by a separate temperature sensor 470 in the charged particle system 400. For example, a controller (not shown) may monitor or control the cooling water of each of WCA 452 and WCA 454, such that the temperature of each of WCA 452 and WCA 454 can be adjusted to regulate the temperature of electronic module 430 or SEM 446. In some embodiments, the temperature measured by sensor 470 may be used to adjust the temperature of electronic module 430 or SEM 446 to be similar to or substantially the same as the temperature of ambient 440. In some embodiments, a sensor (not shown) may be connected to electronic module 430, SEM 446, or main chamber 420 to measure the temperature of electronic module 430, SEM 446, or main chamber 420. For example, when the temperature of WCA, ambient temperature 440, or main chamber temperature 420 exceeds the target temperature range, the temperatures of WCA 452 and WCA 454 can be adjusted.

[0067] Although only sensor 470 is shown, it should be understood that the charged particle system 400 may include any number of sensors or controllers (e.g., Figure 1 , Figure 2A or Figure 2B(e.g., controller 109) to achieve the advantages described in the embodiments of this disclosure. In some embodiments, a single controller or sensor may be used, while in some embodiments, multiple controllers or sensors may be used (e.g., one controller or sensor may be used for multiple WCAs, or a single controller or sensor may be used for multiple WCAs).

[0068] Advantageously, the charged particle system 400 can provide direct temperature control and cooling for the modules on the chamber (e.g., electronic module 430, etc.). Instead of running expensive separate cooling circuits for each high-power module attached to the chamber, WCA 452 and WCA 454 constitute an integrated high-performance cooling solution for the modules on the main chamber 420.

[0069] Furthermore, the charged particle system 400 advantageously provides a much more stable chamber environment than typical systems. Due to the high heat transfer efficiency (e.g., cooling power >10 kW) of the WCA452 and WCA 454, the heat generated by the modules attached to the main chamber 420 will be rapidly absorbed and removed from the main chamber 420, thereby producing a well-conditioned chamber environment with a stable temperature.

[0070] While typical systems may include cooling circuits (e.g., cooling circuit 462) that travel through the objective column of the SEM, the provided cooling power is sometimes insufficient because the heat source is close to the interface between the SEM and the chamber, which is far from the cooling circuit located in the upper part of the SEM module. The charged particle system 400 advantageously adds cooling capacity to the top of the main chamber 420 near the lower portion of the SEM 446, and facilitates cooling and temperature control of the SEM. It should be understood that cooling circuits 462 and 464 (typically used in existing systems) are optional components in the charged particle system 400, and these cooling circuits can be omitted from the charged particle system 400 due to the presence of WCA 452 and WCA 454.

[0071] As described above, vacuum water cooling (e.g., sending cooling water streams into the wafer stage within the vacuum chamber) is expensive and risky. The WCA design of the charged particle system 400 allows the main chamber 420 (which essentially acts as a "heat sink" for all vacuum modules) to be adequately cooled, causing the heat from the wafer stage 422 to dissipate rapidly into the main chamber 420. Since the primary heat transfer mode between the wafer 424 and the main chamber 420 is thermal radiation (e.g., a very small heat flux, less than 1 W), the temperature of the wafer 424 will be substantially the same as the ambient temperature of the main chamber 420. Therefore, the temperature of the wafer 424 (e.g., Figure 2A Sample 208 Figure 2BTemperature control of the wafer 150, etc. can be achieved by temperature control of the main chamber 420 via WCA 452 and WCA 454 without the need for expensive vacuum internal cooling (e.g., water cooling of the moving wafer stage 422).

[0072] Advantageously, compared to conventional systems, the charged particle system 400 prevents overheating and thermal offset of the high-precision metrology equipment connected to the main chamber 420 (e.g., preventing offsets of the SEM, laser positioning equipment, and reference mirror, which are crucial for positioning the wafer stage 422, for example, ...). Figure 2A Electric platform 209 Figure 2B Electric platform 134 Figure 7 The wafer stage 722 (and similar components) is crucial. The charged particle system 400 also prevents thermal drift and loss of control accuracy of the wafer stage 422 itself, as well as throughput loss due to thermal expansion of the wafer 424 and associated image offset. By preventing thermal expansion of the wafer 424, the charged particle system 400 also prevents the generation and contamination of friction particles on the back side of the wafer 424. Furthermore, since separate water cooling is not required in the charged particle system 400, outgassing and leakage can be avoided.

[0073] Figure 5 The embodiments shown are consistent with those of this disclosure. Figure 4 A top view of a charged particle system, 500°.

[0074] like Figure 5 As shown, charged particle systems (e.g., Figure 4 The charged particle system 400 may include a cooling system for the main chamber (e.g., Figure 1 Main Room 101 Figure 4 Main room 420 Figure 7 The main chamber 720, etc.) water-cooled armor (WCA) 552, 554 and 556. Although Figure 5 Three WCAs, 552, 554, and 556, are shown, but it should be understood that any number of WCAs can be used in the charged particle system 400 (e.g., Figure 4 (WCA 452 and WCA 454, etc.). Although WCA 552, WCA 554 and WCA 556 can be described as individual WCA components, it should be understood that WCA 552, WCA 554 and WCA 556 can represent any number of WCAs, including providing a single continuous WCA covering multiple surfaces of a charged particle system.

[0075] WCA 552, WCA 554, and WCA 556 can be stacked or thermally mounted cold plates on the top of the main chamber (e.g., metal plates with long, annular, narrow liquid channels embedded for cooling water flow, which have very high heat transfer efficiency, or thermoelectric coolers (Peltier pads) with one side attached to a radiator and fan for proper heat transfer and dissipation) (e.g., the WCA can be in direct contact with the outer surface of the main chamber). For example, WCA 554 can be located around electronics module 430, and WCA 552 and WCA 556 can be located in SEM 446 (e.g., Figures 1 to 2A Electron beam tool 104 Figure 2B The WCA is located around the electron beam tool 100B, etc. In some embodiments, the WCA may be in direct contact with the electron module 430 or the SEM 446. In some embodiments, the WCA may be adjacent to the SEM 446.

[0076] Coolant (e.g., water or coolant) may be provided by a cooler or facility cooling water 560 (e.g., process cooling water) that can travel through cooling channels of WCA 552, WCA 554, and WCA 556 to remove heat transferred from the main chamber 420 and modules attached to the main chamber (e.g., electronic module 430, SEM 446, etc.). While one cooler or facility cooling water 560 is shown, it should be understood that any number of coolers or facility cooling waters may be included in the charged particle system (e.g., a single cooler for all WCAs or multiple coolers for multiple WCAs).

[0077] In some embodiments, each of WCA 552, WCA 554, and WCA 556 may include a mounting hole 570 (located in a position that does not interfere with the cooling channel) to mount WCA 552, WCA 554, and WCA 556 to the main chamber and to provide a mounting location for modules (e.g., electronic module 430, etc.) such that electronic module 430 is not directly attached to the main chamber. As a safety measure, a leak-proof tray may be included near the cooling flow inlet or outlet of WCA 552, WCA 554, and WCA 556 to collect any leaks.

[0078] In some embodiments, the setpoint temperature for the cooling control of WCA 552, WCA 554, and WCA 556 can be similar to the ambient temperature. Figure 4The ambient temperature (440) is measured. In some embodiments, the ambient temperature may be measured by a separate temperature sensor in the charged particle system. For example, a controller (not shown) may monitor or control the cooling water of each of WCA 552, WCA 554, and WCA 556, such that the temperature of each of WCA 552, WCA 554, and WCA 556 can be adjusted to regulate the temperature of electronic module 430 or SEM 446. In some embodiments, the temperature measured by the sensor may be used to adjust the temperature of electronic module 430 or SEM 446 to be similar to or substantially the same as the ambient temperature. In some embodiments, a sensor (not shown) may be connected to electronic module 430, SEM 446, or main chamber to measure the temperature of electronic module 430, SEM 446, or main chamber. For example, the temperatures of WCA 552, WCA 554, and WCA 556 may be adjusted when the temperature of the WCA, the ambient temperature, or the main chamber temperature exceeds a target temperature range.

[0079] In some embodiments, a single controller or sensor may be used, while in other embodiments, multiple controllers or sensors may be used (e.g., one controller or sensor may be used for multiple WCAs, or a single controller or sensor may be used for multiple WCAs).

[0080] Figure 6 An exemplary charged particle system 600 is illustrated. The charged particle system 600 includes a vacuum environment 620 and an ambient environment 640. In a typical system, such as... Figure 6 (For example, as shown in view 630), the wafer stage 622 is "seated" on the bottom surface 652 of the main chamber in a vacuum environment 620. The wafer stage 622 includes a substrate 626 and foot pads 624, and may include a gasket located between the foot pads 624 and the bottom surface 652 of the main chamber. Although Figure 6 Two foot pads 624 are shown, but it should be understood that the wafer stage 622 sits on the bottom surface 652 of the main chamber via four foot pads (and shims that can be inserted between each foot pad and the bottom surface 652 of the main chamber). The shims can locally adjust the height of the wafer stage 622.

[0081] Typical systems are limited. For example, the heat transfer efficiency between the wafer stage 622 and the main chamber is extremely low, partly due to the very small contact area between the wafer stage 622 and the bottom surface 652 of the main chamber (see, for example, the gap 628 between the substrate 626 and the bottom surface 652 of the main chamber and the cooling armor 650). This extremely small contact area can lead to heat buildup and thermal drift in sensitive modules. As mentioned above, water cooling is also limited (e.g., leakage, etc.). Furthermore, increasing the contact area between the wafer stage 622 and the main chamber increases the difficulty of leveling the wafer stage 622.

[0082] Figure 7 An exemplary charged particle system 700 consistent with embodiments of this disclosure is shown (e.g., Figure 1 EBI system 100, Figure 2A Electron beam tool 104 Figure 2B Electron beam tool 100B, Figure 4 Charged particle system 400, etc.

[0083] In some embodiments, the charged particle system 700 may include a wafer stage 722 in a vacuum environment 720 (e.g., Figure 2A Electric platform 209 Figure 2B Electric platform 134 Figure 4 The chip stage 422, etc.) and the cooling armor 750 in the surrounding environment 740 (e.g., Figures 4 to 5 Water-cooled armor (WCA) 452, 454, 552, 554, 556, etc. (e.g.) Figure 7 As shown, the charged particle system 700 may include a substrate 726 and a main chamber (e.g., on the wafer stage 722) in the wafer stage 722. Figure 1 Main Room 101 Figure 4 A heat transfer promoter 760 (e.g., a heat transfer device) is located between the bottom surface 754 of the main chamber 420 and the substrate 726. In some embodiments, a cooling armor 750 may be located on the outer surface of the main chamber that is directly opposite the substrate 726.

[0084] Advantageously, the heat transfer enhancer 760 can improve the heat transfer efficiency between the wafer stage 722 and the main chamber without increasing the contact area between the wafer stage 722 and the bottom surface 752 of the main chamber. Therefore, thermal drift of the sensitive module can be prevented.

[0085] As shown in view 770, the heat transfer promoter 760 may include deformable components 762, 764, or some combination of different shapes. The deformable component 762 may be finned, and the deformable component 764 may be helical.

[0086] In some embodiments, the deformable member 762 or 764 may be formed by deforming the bottom surface 754 of the main chamber or the substrate 726 of the wafer stage 722 (e.g., the deformable member 762 or 764 may be deformed by a force applied to the substrate 726 or the bottom surface 754 of the main chamber). In some embodiments, the deformable member 762 or 764 of the heat transfer promoter 760 is necessary because the wafer stage 722 has high precision requirements. For example, when the wafer stage 722 is installed, its height can be adjusted and calibrated during the leveling of the wafer stage 722. Advantageously, the deformable member 762 or 764 can improve the heat transfer efficiency between the wafer stage 722 and the main chamber without negatively impacting the leveling of the wafer stage 722.

[0087] Figure 8Examples of embodiments consistent with those of this disclosure are shown for charged particle systems (e.g., Figure 1 EBI system 100, Figure 2A Electron beam tool 104 Figure 2B Electron beam tool 100B, Figure 4 Charged particle system 400, Figure 7 An exemplary cooling process 800 in a charged particle system 700, etc.

[0088] At step 802, it is installed into the vacuum chamber (e.g., Figure 1 Main Room 101 Figure 4 Main room 420 Figure 7 The cooling platform of the main chamber 720, etc. Figures 4 to 5 Water-cooled armor (WCA) 452, 454, 552, 554, 556; Figure 7 (such as the Cooling Armor 750), which can maintain and cool multiple modules (e.g., Figures 4 to 5 Electronic module 430, etc.

[0089] In some embodiments, the charged particle system may include any number of cooling platforms, including a single continuous cooling platform that provides coverage over multiple surfaces of the charged particle system.

[0090] The cooling platform can be a cold plate, such as a metal plate embedded with long, annular, narrow liquid channels for cooling water flow, which has very high heat transfer efficiency. In some embodiments, the cooling platform can be a thermoelectric cooler (Peltier pad) attached to one side of a radiator and fan for proper heat transfer and dissipation. In some embodiments, the cooling platform can be stacked or thermally mounted on top of the main chamber (e.g., the cooling platform can directly contact the outer surface of the main chamber). For example, the cooling platform can be located below or around the electronic module. In some embodiments, the WCA can directly contact the electronic module or SEM (e.g., Figures 1 to 2A Electron beam tool 104 Figure 2B Electron beam tool 100B, Figures 4 to 5 (e.g., SEM 446). In some embodiments, the cooling platform may be adjacent to the SEM.

[0091] Coolant (e.g., water or coolant) can be cooled by a cooler or facility (e.g., Figure 5 A 560-degree cooler or facility cooling water (e.g., process cooling water) is provided, which can travel through the cooling channels of the cooling platform to remove heat transferred from the main chamber and modules attached to the main chamber (e.g., electronic modules, SEMs, etc.). It should be understood that the charged particle system may include any number of coolers or facility cooling water (e.g., a single cooler for all cooling platforms or multiple coolers for multiple cooling platforms).

[0092] In some embodiments, each cooling platform in the cooling platform may include mounting holes (e.g., Figure 5 Mounting holes 570, etc. (located in a position that does not interfere with the cooling channel) are provided to mount the cooling platform to the main chamber and to provide mounting positions for modules so that electronic modules are not directly attached to the main chamber. As a safety measure, a leak-proof tray may be included near the cooling flow inlet or outlet facing the cooling platform to collect any leaks.

[0093] In step 804, the controller (e.g., Figure 1 , Figure 2A , Figure 2B The controller 109, etc., can monitor the temperature of the cooling platform. In some embodiments, the setpoint temperature for cooling control of the cooling platform can be similar to the ambient temperature (e.g., Figure 4 The surrounding environment 440 Figure 7 The temperature of the surrounding environment (e.g., 740°C).

[0094] In step 806, the controller may monitor the temperature of the vacuum chamber or the temperature of the surrounding environment. In some embodiments, the temperature of the surrounding environment may be determined by a separate temperature sensor in the charged particle system (e.g., Figure 4 Temperature sensors (such as 470) are used for measurement.

[0095] In step 808, the controller can adjust the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. For example, the controller can monitor or control the cooling water in each cooling platform, enabling the temperature of the cooling platform to be adjusted to regulate the temperature of the electronic module or SEM.

[0096] In some embodiments, the temperature measured by the sensor can be used to adjust the temperature of the electronic module or SEM to be similar to or substantially the same as the ambient temperature. In some embodiments, the sensor can be connected to the electronic module, SEM, or main chamber to measure the temperature of the electronic module, SEM, or main chamber. For example, the temperature of the cooling platform can be adjusted when the temperature of the cooling platform, the ambient temperature, or the main chamber temperature exceeds a target temperature range.

[0097] In some embodiments, the charged particle system may be included on a wafer stage (e.g., Figure 4 Chip station 422, Figure 7 Substrates (e.g., wafer stage 722, etc.) Figure 7 (such as substrate 726) and the bottom surface of the main chamber (e.g., Figure 7 The heat transfer promoter between the bottom surface 754, etc. Figure 7 Heat transfer devices, heat transfer promoters 760, etc.). In some embodiments, cooling armor (e.g., Figures 4 to 5 WCA 452, 454, 552, 554 and 556; Figure 7 The cooling armor (such as 750) can be located on the outer surface of the main chamber that is directly opposite the base plate.

[0098] Advantageously, the heat transfer enhancer can improve the heat transfer efficiency between the wafer stage and the main chamber without increasing the contact area between the bottom surfaces of the wafer stage and the main chamber. Therefore, thermal drift of sensitive modules can be prevented.

[0099] In some embodiments, the heat transfer accelerator may include a deformable component (e.g., Figure 7 (e.g., deformable components 762, 764, or some combination of different shapes). The deformable components can be fin-shaped or spiral-shaped.

[0100] In some embodiments, the deformable component may be formed by deforming the bottom surface of the main chamber or the substrate of the wafer stage (e.g., the deformable component may be deformed by a force applied to the substrate or the bottom surface of the main chamber). In some embodiments, the deformable component of the heat transfer accelerator is necessary because the wafer stage has high precision requirements. For example, when the wafer stage is installed, its height can be adjusted and calibrated during wafer stage leveling. Advantageously, the deformable component can improve the heat transfer efficiency between the wafer stage and the main chamber without negatively impacting wafer stage leveling.

[0101] A non-transitory computer-readable medium consistent with embodiments of this disclosure may be provided, which stores a processor for a controller (e.g., Figure 1 , Figure 2A , Figure 2B Instructions to the controller 109, etc., for controlling the electron beam tool or other systems or components thereof. These instructions may allow one or more processors to perform functions such as temperature monitoring, temperature sensing, temperature regulation, temperature regulation of the cooling platform, image processing, data processing, beam scanning, graphic display, operation of the charged particle beam device, or operation of another imaging device, to provide the same functionality as described above for... Figure 4 , Figure 7 and Figure 8The operations described are consistent with those described. In some embodiments, a non-transitory computer-readable medium may be provided storing instructions for a processor to perform the steps of process 800. Common forms of non-transitory media include, for example, floppy disks, floppy disk drives, hard disks, solid-state drives, magnetic tape or any other magnetic data storage media, optical disc read-only memory (CD-ROM), any other optical data storage media, any physical media with a perforated pattern, random access memory (RAM), programmable read-only memory (PROM) and erasable programmable read-only memory (EPROM), FLASH-EPROM or any other flash memory, non-volatile random access memory (NVRAM), caches, registers, any other memory chips or cartridges, and their network versions.

[0102] The embodiments may be further described using the following terms: 1. A system for cooling a charged particle system, the system comprising: A wafer stage is used to hold a wafer in a vacuum chamber. A cooling platform, installed in the vacuum chamber, is configured to hold and cool multiple modules; and The controller has one or more processors and is configured to: Monitor the temperature of the cooling platform; Monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; and The temperature of the cooling platform is adjusted based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 2. The system according to Clause 1, wherein the cooling platform comprises a plate. 3. The system according to Clause 2, wherein the plate is embedded with liquid channels for coolant. 4. The system according to Clause 3, wherein the temperature regulation of the cooling platform includes the regulation of the flow rate or temperature of the coolant. 5. The system according to any one of Clauses 3 to 4, wherein the coolant is supplied by a cooler. 6. The system according to any one of Clauses 1 to 5, wherein the temperature of the cooling platform is regulated based on a target temperature range. 7. The system according to Clause 6, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 8. The system according to any one of clauses 1 to 7, wherein the plurality of modules includes a scanning electron microscope (SEM) or a module associated with the SEM. 9. The system according to any one of Clauses 1 to 8, wherein the cooling platform comprises a plurality of cooling platforms. 10. The system according to Clause 9, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 11. The system according to Clause 10, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 12. The system according to any one of Clauses 1 to 11, wherein the cooling platform is in direct contact with the plurality of modules. 13. The system according to any one of Clauses 1 to 12, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 14. The system according to any one of clauses 1 to 13, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the inner surface of the substrate or the vacuum chamber. 15. The system according to Clause 14, wherein the deformable portion contacts the substrate and the inner surface of the vacuum chamber. 16. The system according to any one of Clauses 14 to 15, wherein the deformed portion is finned. 17. The system according to any one of clauses 14 to 16, wherein the deformed portion is helical. 18. The system according to any one of Clauses 14 to 17, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate. 19. A system for cooling a charged particle system, the system comprising: A wafer stage is used to hold a wafer in a vacuum chamber. A cooling platform, installed in the vacuum chamber, is configured to hold multiple modules and transfer heat from the modules to the cooling platform; and The controller is configured to regulate the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment, thereby regulating the heat transfer from the plurality of modules to the cooling platform. 20. The system according to Clauses 1 to 19, wherein the cooling platform comprises a plate. 21. The system according to Clause 20, wherein the plate is embedded with liquid channels for coolant. 22. The system according to Clause 21, wherein the temperature regulation of the cooling platform includes the regulation of the flow rate or temperature of the coolant. 23. The system according to any one of Clauses 21 to 22, wherein the coolant is supplied by a cooler. 24. The system according to any one of Clauses 19 to 23, wherein the temperature of the cooling platform is regulated based on a target temperature range. 25. The system according to Clause 24, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 26. The system according to any one of clauses 19 to 25, wherein said plurality of modules include a scanning electron microscope (SEM) or a module associated with said SEM. 27. The system according to any one of Clauses 19 to 26, wherein the cooling platform comprises a plurality of cooling platforms. 28. The system according to Clause 27, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 29. The system according to Clause 28, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 30. The system according to any one of Clauses 19 to 29, wherein the cooling platform is in direct contact with the plurality of modules. 31. The system according to any one of Clauses 19 to 30, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 32. The system according to any one of clauses 19 to 31, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the substrate or through the inner surface of the vacuum chamber. 33. The system according to Clause 32, wherein the deformable portion contacts the substrate and the inner surface of the vacuum chamber. 34. The system according to any one of clauses 32 to 33, wherein the deformed portion is finned. 35. The system according to any one of clauses 32 to 34, wherein the deformed portion is helical. 36. The system according to any one of clauses 32 to 35, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate. 37. A system for cooling a charged particle system, the system comprising: A wafer stage, which holds a wafer in a vacuum chamber, the wafer stage comprising: substrate; A heat transfer device, located between a substrate and the inner surface of a vacuum chamber, includes a deformable portion configured to deform through the inner surface of either the substrate or the vacuum chamber; and A cooling platform is located on the outer surface of the vacuum chamber that is directly opposite the substrate. 38. The system according to Clause 37, wherein the deformable portion contacts the substrate and the inner surface of the vacuum chamber. 39. The system according to any one of clauses 37 to 38, wherein the deformed portion is finned. 40. The system according to any one of clauses 37 to 39, wherein the deformed portion is helical. 41. The system according to any one of clauses 37 to 40, wherein the cooling platform is a first cooling platform, and the cooling platform further comprises: a second cooling platform mounted to the vacuum chamber, the second cooling platform being configured to hold and cool a plurality of modules; and The controller has one or more processors and is configured to: Monitor the temperature of the second cooling platform; Monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; and The temperature of the second cooling platform is adjusted based on the temperature of the second cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 42. The system according to Clause 41, wherein the cooling platform comprises a plate. 43. The system according to Clause 42, wherein the plate is embedded with liquid channels for coolant. 44. The system according to Clause 43, wherein the temperature regulation of the second cooling platform includes the regulation of the flow rate or temperature of the coolant. 45. The system according to any one of clauses 43 to 44, wherein the coolant is supplied by a cooler. 46. ​​The system according to any one of clauses 41 to 45, wherein the temperature of the second cooling platform is regulated based on a target temperature range. 47. The system according to Clause 46, wherein the temperature of the second cooling platform is adjusted when the temperature of the second cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 48. The system according to any one of clauses 41 to 47, wherein the plurality of modules includes a scanning electron microscope (SEM) or a module associated with the SEM. 49. The system according to any one of Clauses 41 to 48, wherein the second cooling platform comprises a plurality of cooling platforms. 50. The system according to Clause 49, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 51. The system according to Clause 50, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 52. The system according to any one of clauses 41 to 51, wherein the second cooling platform is in direct contact with the plurality of modules. 53. The system according to any one of clauses 41 to 52, wherein the second cooling platform is in direct contact with the outer surface of the vacuum chamber. 54. A non-transitory computer-readable medium storing an instruction set executable by at least one processor of a computing device to cause the computing device to perform cooling operations in a charged particle system, the charged particle system including a wafer stage for holding a wafer in a vacuum chamber and a cooling platform mounted to the vacuum chamber, the cooling platform being configured to hold and cool a plurality of modules, the operations including: Monitor the temperature of the cooling platform; Monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; and The temperature of the cooling platform is adjusted based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 55. The non-transitory computer-readable medium as described in Clause 54, wherein the cooling platform comprises a plate. 56. The non-transitory computer-readable medium according to Clause 55, wherein the plate is embedded with liquid channels for coolant. 57. The non-transitory computer-readable medium according to Clause 56, wherein the temperature regulation of the cooling platform includes regulation of the flow rate or temperature of the coolant. 58. The non-transitory computer-readable medium according to any one of Clauses 56 to 57, wherein the coolant is provided by a cooler. 59. The non-transitory computer-readable medium according to any one of clauses 54 to 58, wherein the temperature of the cooling platform is regulated based on a target temperature range. 60. The non-transitory computer-readable medium according to Clause 59, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 61. A non-transitory computer-readable medium according to any one of clauses 54 to 60, wherein said plurality of modules include a scanning electron microscope (SEM) or a module associated with said SEM. 62. The non-transitory computer-readable medium according to any one of Clauses 54 to 61, wherein the cooling platform comprises a plurality of cooling platforms. 63. The non-transitory computer-readable medium according to Clause 62, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 64. The non-transitory computer-readable medium according to Clause 63, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 65. The non-transitory computer-readable medium according to any one of clauses 54 to 64, wherein the cooling platform is in direct contact with the plurality of modules. 66. The non-transitory computer-readable medium according to any one of clauses 54 to 65, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 67. The non-transitory computer-readable medium according to any one of clauses 54 to 66, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the inner surface of the substrate or the vacuum chamber. 68. The non-transitory computer-readable medium according to Clause 67, wherein the deformed portion contacts the inner surface of the substrate and the vacuum chamber. 69. The non-transitory computer-readable medium according to any one of clauses 67 to 68, wherein the deformed portion is finned. 70. The non-transitory computer-readable medium according to any one of clauses 67 to 69, wherein the deformed portion is helical. 71. The non-transitory computer-readable medium according to any one of clauses 67 to 70, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate. 72. A non-transitory computer-readable medium storing an instruction set executable by at least one processor of a computing device to cause the computing device to perform cooling operations in a charged particle system, the charged particle system including a wafer stage for holding a wafer in a vacuum chamber, a cooling platform mounted to the vacuum chamber, the cooling platform being configured to hold a plurality of modules and transfer heat from the plurality of modules to the cooling platform, the operations including: The heat transfer from the plurality of modules to the cooling platform is regulated by adjusting the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 73. The non-transitory computer-readable medium according to Clause 72, wherein the cooling platform comprises a plate. 74. The non-transitory computer-readable medium according to Clause 73, wherein the plate is embedded with liquid channels for coolant. 75. The non-transitory computer-readable medium according to Clause 74, wherein the temperature regulation of the cooling platform includes regulation of the flow rate or temperature of the coolant. 76. The non-transitory computer-readable medium according to any one of Clauses 74 to 75, wherein the coolant is provided by a cooler. 77. The non-transitory computer-readable medium according to any one of clauses 72 to 76, wherein the temperature of the cooling platform is regulated based on a target temperature range. 78. The non-transitory computer-readable medium according to Clause 77, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 79. A non-transitory computer-readable medium according to any one of clauses 72 to 78, wherein said plurality of modules include a scanning electron microscope (SEM) or a module associated with said SEM. 80. The non-transitory computer-readable medium according to any one of Clauses 72 to 79, wherein the cooling platform comprises a plurality of cooling platforms. 81. The non-transitory computer-readable medium according to Clause 80, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 82. The non-transitory computer-readable medium according to Clause 81, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 83. The non-transitory computer-readable medium according to any one of clauses 72 to 82, wherein the cooling platform is in direct contact with the plurality of modules. 84. The non-transitory computer-readable medium according to any one of clauses 72 to 83, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 85. The non-transitory computer-readable medium according to any one of clauses 72 to 84, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the substrate or through the inner surface of the vacuum chamber. 86. The non-transitory computer-readable medium according to Clause 85, wherein the deformed portion contacts the inner surface of the substrate and the vacuum chamber. 87. The non-transitory computer-readable medium according to any one of clauses 85 to 86, wherein the deformed portion is finned. 88. A non-transitory computer-readable medium according to any one of clauses 85 to 87, wherein the deformed portion is helical. 89. The non-transitory computer-readable medium according to any one of clauses 85 to 88, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate. 90. A method for cooling in a charged particle system, the charged particle system comprising a wafer stage for holding a wafer in a vacuum chamber, a cooling platform mounted to the vacuum chamber, the cooling platform being configured to hold and cool a plurality of modules, the method comprising: Monitor the temperature of the cooling platform; Monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; and The temperature of the cooling platform is adjusted based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 91. The method according to Clause 90, wherein the cooling platform comprises a plate. 92. The method according to Clause 91, wherein the plate is embedded with liquid channels for coolant. 93. The method according to Clause 92, wherein the temperature regulation of the cooling platform includes the regulation of the flow rate or temperature of the coolant. 94. The method according to any one of clauses 92 to 93, wherein the coolant is provided by a cooler. 95. The method according to any one of clauses 90 to 94, wherein the temperature of the cooling platform is adjusted based on a target temperature range. 96. The method according to Clause 95, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 97. The method according to any one of clauses 90 to 96, wherein the plurality of modules includes a scanning electron microscope (SEM) or a module associated with the SEM. 98. The method according to any one of clauses 90 to 97, wherein the cooling platform comprises a plurality of cooling platforms. 99. The method according to Clause 98, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 100. The method according to Clause 99, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 101. The method according to any one of Clauses 90 to 100, wherein the cooling platform is in direct contact with the plurality of modules. 102. The method according to any one of clauses 90 to 101, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 103. The method according to any one of clauses 90 to 102, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the inner surface of the substrate or the vacuum chamber. 104. The method according to Clause 103, wherein the deformed portion contacts the substrate and the inner surface of the vacuum chamber. 105. The method according to any one of clauses 103 to 104, wherein the deformed portion is finned. 106. The method according to any one of clauses 103 to 105, wherein the deformed portion is helical. 107. The system according to any one of clauses 103 to 106, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate. 108. A method for cooling a charged particle system, the charged particle system comprising a wafer stage for holding a wafer in a vacuum chamber, a cooling platform mounted to the vacuum chamber, the cooling platform being configured to hold a plurality of modules and transfer heat from the plurality of modules to the cooling platform, the method comprising: The heat transfer from the plurality of modules to the cooling platform is regulated by adjusting the temperature of the cooling platform based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment. 109. The method according to Clause 108, wherein the cooling platform comprises a plate. 110. The method according to Clause 109, wherein the plate is embedded with liquid channels for coolant. 111. The method according to Clause 110, wherein the temperature regulation of the cooling platform includes the regulation of the flow rate or temperature of the coolant. 112. The method according to any one of clauses 110 to 111, wherein the coolant is provided by a cooler. 113. The method according to any one of clauses 108 to 112, wherein the temperature of the cooling platform is adjusted based on a target temperature range. 114. The method according to Clause 113, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range. 115. The method according to any one of clauses 108 to 114, wherein the plurality of modules includes a scanning electron microscope (SEM) or a module associated with the SEM. 116. The method according to any one of clauses 108 to 115, wherein the cooling platform comprises a plurality of cooling platforms. 117. The method according to Clause 116, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM). 118. The method according to Clause 117, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM. 119. The method according to any one of clauses 108 to 118, wherein the cooling platform is in direct contact with the plurality of modules. 120. The method according to any one of clauses 108 to 119, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber. 121. The method according to any one of clauses 108 to 120, wherein the wafer stage further comprises: substrate; and A heat transfer device between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the inner surface of the substrate or the vacuum chamber. 122. The method according to Clause 121, wherein the deformed portion contacts the substrate and the inner surface of the vacuum chamber. 123. The method according to any one of clauses 121 to 122, wherein the deformed portion is finned. 124. The method according to any one of clauses 121 to 123, wherein the deformed portion is helical. 125. The method according to any one of clauses 121 to 124, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate.

[0103] It should be understood that the embodiments of this disclosure are not limited to the exact constructions described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from the scope of this disclosure.

Claims

1. A non-transitory computer-readable medium storing an instruction set executable by at least one processor of a computing device to cause the computing device to perform cooling operations in a charged particle system, the charged particle system including a wafer stage for holding a wafer in a vacuum chamber and a cooling platform mounted to the vacuum chamber, the cooling platform being configured to hold and cool a plurality of modules, the operations including: Monitor the temperature of the cooling platform; Monitor the temperature of the vacuum chamber or the temperature of the surrounding environment; as well as The temperature of the cooling platform is adjusted based on the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment.

2. The non-transitory computer-readable medium of claim 1, wherein the temperature adjustment of the cooling platform is based on a target temperature range.

3. The non-transitory computer-readable medium of claim 2, wherein the temperature of the cooling platform is adjusted when the temperature of the cooling platform, the temperature of the vacuum chamber, or the temperature of the surrounding environment exceeds the target temperature range.

4. The non-transitory computer-readable medium of claim 1, wherein the plurality of modules includes a scanning electron microscope (SEM) or a module associated with the SEM.

5. The non-transitory computer-readable medium according to claim 1, wherein the cooling platform comprises a plurality of cooling platforms.

6. The non-transitory computer-readable medium of claim 5, wherein the plurality of cooling platforms includes at least one cooling platform adjacent to a scanning electron microscope (SEM).

7. The non-transitory computer-readable medium of claim 6, wherein the at least one cooling platform adjacent to the SEM is in direct contact with the SEM.

8. The non-transitory computer-readable medium of claim 1, wherein the cooling platform is in direct contact with the plurality of modules.

9. The non-transitory computer-readable medium of claim 1, wherein the cooling platform is in direct contact with the outer surface of the vacuum chamber.

10. The non-transitory computer-readable medium of claim 1, wherein the wafer stage further comprises: substrate; and A heat transfer device is located between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the substrate or through the inner surface of the vacuum chamber.

11. The non-transitory computer-readable medium of claim 10, wherein the deformed portion contacts the inner surface of the substrate and the vacuum chamber.

12. The non-transitory computer-readable medium of claim 10, wherein the deformed portion is finned.

13. The non-transitory computer-readable medium of claim 10, wherein the deformed portion is helical.

14. The non-transitory computer-readable medium of claim 10, wherein the cooling platform comprises a plurality of cooling platforms, and one of the plurality of cooling platforms is located on the outer surface of the vacuum chamber directly opposite the substrate.

15. A system for cooling a charged particle system, the system comprising: A wafer stage for holding a wafer in a vacuum chamber, the wafer stage comprising: substrate; A heat transfer device, between the substrate and the inner surface of the vacuum chamber, the heat transfer device including a deformable portion configured to deform through the substrate or through the inner surface of the vacuum chamber; and A cooling platform is located on the outer surface of the vacuum chamber that is directly opposite the substrate.

Images